CN101355835B - 发光器件及发光器件的制造方法 - Google Patents
发光器件及发光器件的制造方法 Download PDFInfo
- Publication number
- CN101355835B CN101355835B CN2008101311144A CN200810131114A CN101355835B CN 101355835 B CN101355835 B CN 101355835B CN 2008101311144 A CN2008101311144 A CN 2008101311144A CN 200810131114 A CN200810131114 A CN 200810131114A CN 101355835 B CN101355835 B CN 101355835B
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- mentioned
- electrode layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 262
- 239000002346 layers by function Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 27
- 230000005855 radiation Effects 0.000 claims description 12
- 238000002834 transmittance Methods 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 claims description 4
- BSUHXFDAHXCSQL-UHFFFAOYSA-N [Zn+2].[W+4].[O-2].[In+3] Chemical compound [Zn+2].[W+4].[O-2].[In+3] BSUHXFDAHXCSQL-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 141
- 230000000694 effects Effects 0.000 description 43
- 239000000758 substrate Substances 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- 150000002739 metals Chemical class 0.000 description 25
- 238000002347 injection Methods 0.000 description 19
- 239000007924 injection Substances 0.000 description 19
- 239000011651 chromium Substances 0.000 description 16
- 230000008859 change Effects 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 14
- 239000007788 liquid Substances 0.000 description 14
- 230000000007 visual effect Effects 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000012467 final product Substances 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 150000002894 organic compounds Chemical class 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000002452 interceptive effect Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002220 fluorenes Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminium-neodymium-titanium Chemical compound 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- SQNZJJAZBFDUTD-UHFFFAOYSA-N durene Chemical compound CC1=CC(C)=C(C)C=C1C SQNZJJAZBFDUTD-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007195881A JP2009032553A (ja) | 2007-07-27 | 2007-07-27 | 表示装置 |
JP195881/2007 | 2007-07-27 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101639141A Division CN101854756B (zh) | 2007-07-27 | 2008-07-28 | 发光器件及发光器件的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101355835A CN101355835A (zh) | 2009-01-28 |
CN101355835B true CN101355835B (zh) | 2011-12-28 |
Family
ID=40294461
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101311144A Expired - Fee Related CN101355835B (zh) | 2007-07-27 | 2008-07-28 | 发光器件及发光器件的制造方法 |
CN2010101639141A Expired - Fee Related CN101854756B (zh) | 2007-07-27 | 2008-07-28 | 发光器件及发光器件的制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101639141A Expired - Fee Related CN101854756B (zh) | 2007-07-27 | 2008-07-28 | 发光器件及发光器件的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8174175B2 (zh) |
JP (1) | JP2009032553A (zh) |
CN (2) | CN101355835B (zh) |
HK (1) | HK1126619A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008310974A (ja) * | 2007-06-12 | 2008-12-25 | Casio Comput Co Ltd | 表示装置及びその製造方法 |
TWI618268B (zh) * | 2012-12-07 | 2018-03-11 | 晶元光電股份有限公司 | 發光裝置 |
CN103672715A (zh) * | 2013-12-29 | 2014-03-26 | 哈尔滨固泰电子有限责任公司 | 高位刹车灯的oled装置 |
CN104532207B (zh) * | 2014-12-23 | 2017-01-25 | 国家纳米科学中心 | 一种氮氧化硅膜材料及其制备方法和用途 |
KR102315040B1 (ko) * | 2017-07-11 | 2021-10-19 | 엘지디스플레이 주식회사 | 유기발광소자를 이용한 조명장치 및 그 제조방법 |
KR102430032B1 (ko) * | 2017-08-16 | 2022-08-04 | 동우 화인켐 주식회사 | 투명 전극 적층체 및 이의 제조 방법 |
CN107946475B (zh) * | 2017-11-21 | 2019-11-12 | 中山大学 | 有机共轭发光聚合物与氮化硅的混合集成材料结构及其制备方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640067A (en) | 1995-03-24 | 1997-06-17 | Tdk Corporation | Thin film transistor, organic electroluminescence display device and manufacturing method of the same |
US6133692A (en) | 1998-06-08 | 2000-10-17 | Motorola, Inc. | White light generating organic electroluminescent device and method of fabrication |
JP4627822B2 (ja) * | 1999-06-23 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
US6366017B1 (en) * | 1999-07-14 | 2002-04-02 | Agilent Technologies, Inc/ | Organic light emitting diodes with distributed bragg reflector |
US6384427B1 (en) * | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
JP4053260B2 (ja) | 2000-10-18 | 2008-02-27 | シャープ株式会社 | 有機エレクトロルミネッセンス表示素子 |
KR100731033B1 (ko) | 2000-12-27 | 2007-06-22 | 엘지.필립스 엘시디 주식회사 | 전계발광소자 및 그 제조방법 |
JP3508741B2 (ja) * | 2001-06-05 | 2004-03-22 | ソニー株式会社 | 表示素子 |
JP4074099B2 (ja) | 2002-02-04 | 2008-04-09 | 東芝松下ディスプレイテクノロジー株式会社 | 平面表示装置およびその製造方法 |
US7511419B2 (en) | 2002-05-14 | 2009-03-31 | Casio Computer Co., Ltd. | Luminescent panel having a reflecting film to reflect light outwardly which is shaped to condense the reflected light |
JP2004014385A (ja) * | 2002-06-10 | 2004-01-15 | Fuji Photo Film Co Ltd | 有機エレクトロルミネッセンス素子 |
CN1497306A (zh) | 2002-09-30 | 2004-05-19 | ��ʽ��������Զ�֯�������� | 光发射器、显示单元和发光单元 |
US6965197B2 (en) * | 2002-10-01 | 2005-11-15 | Eastman Kodak Company | Organic light-emitting device having enhanced light extraction efficiency |
US6737800B1 (en) | 2003-02-18 | 2004-05-18 | Eastman Kodak Company | White-emitting organic electroluminescent device with color filters and reflective layer for causing colored light constructive interference |
JP2005019211A (ja) * | 2003-06-26 | 2005-01-20 | Casio Comput Co Ltd | El表示パネル及びel表示パネルの製造方法 |
JP3893386B2 (ja) | 2004-02-04 | 2007-03-14 | シャープ株式会社 | 有機エレクトロルミネッセンス表示装置の製造方法 |
CN1961617B (zh) * | 2004-03-29 | 2010-04-28 | 富士胶片株式会社 | 有机电致发光元件及其制造方法和显示装置 |
US7129634B2 (en) | 2004-04-07 | 2006-10-31 | Eastman Kodak Company | Color OLED with added color gamut pixels |
US7554265B2 (en) * | 2004-06-25 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI294252B (en) | 2004-09-28 | 2008-03-01 | Toshiba Matsushita Display Tec | Display |
US8569948B2 (en) | 2004-12-28 | 2013-10-29 | Samsung Display Co., Ltd. | Electroluminescent devices and methods of making electroluminescent devices including an optical spacer |
JP2006244713A (ja) * | 2005-02-28 | 2006-09-14 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子 |
KR100770257B1 (ko) * | 2005-03-21 | 2007-10-25 | 삼성에스디아이 주식회사 | 유기전계 발광소자 및 그 제조방법 |
JP4832781B2 (ja) | 2005-03-29 | 2011-12-07 | 富士フイルム株式会社 | 有機エレクトロルミネッセンス表示装置 |
JP2006286309A (ja) | 2005-03-31 | 2006-10-19 | Toppan Printing Co Ltd | 有機el表示装置とその製造方法 |
US8102111B2 (en) | 2005-07-15 | 2012-01-24 | Seiko Epson Corporation | Electroluminescence device, method of manufacturing electroluminescence device, and electronic apparatus |
US7622865B2 (en) | 2006-06-19 | 2009-11-24 | Seiko Epson Corporation | Light-emitting device, image forming apparatus, display device, and electronic apparatus |
JP2008310974A (ja) | 2007-06-12 | 2008-12-25 | Casio Comput Co Ltd | 表示装置及びその製造方法 |
-
2007
- 2007-07-27 JP JP2007195881A patent/JP2009032553A/ja active Pending
-
2008
- 2008-07-25 US US12/179,686 patent/US8174175B2/en not_active Expired - Fee Related
- 2008-07-28 CN CN2008101311144A patent/CN101355835B/zh not_active Expired - Fee Related
- 2008-07-28 CN CN2010101639141A patent/CN101854756B/zh not_active Expired - Fee Related
-
2009
- 2009-06-08 HK HK09105102.5A patent/HK1126619A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN101355835A (zh) | 2009-01-28 |
CN101854756B (zh) | 2013-11-27 |
US20090026469A1 (en) | 2009-01-29 |
CN101854756A (zh) | 2010-10-06 |
US8174175B2 (en) | 2012-05-08 |
JP2009032553A (ja) | 2009-02-12 |
HK1126619A1 (en) | 2009-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101471292B (zh) | 显示装置的制造方法及制造装置 | |
CN101355835B (zh) | 发光器件及发光器件的制造方法 | |
CN101904220B (zh) | 有机电致发光元件及其制造方法 | |
CN104218055B (zh) | 有机发光显示装置及其制造方法 | |
US7906898B2 (en) | Organic light emitting device with increased luminescence | |
US7279714B2 (en) | Flat panel display device | |
CN101151742B (zh) | 电致发光元件及其制造方法 | |
KR101093403B1 (ko) | 표시장치 및 그 제조방법 | |
US7791268B2 (en) | Display device using reflective film and manufacturing method of the same | |
CN101132020B (zh) | 有机发光装置 | |
US7514719B2 (en) | Display device | |
KR20070009432A (ko) | 일렉트로 루미네선스 장치, 일렉트로 루미네선스 장치의제조 방법 및 전자 기기 | |
US7250629B2 (en) | Semiconductor device and flat panel display device having the same | |
CN108258132B (zh) | 电致发光显示装置 | |
US9773996B2 (en) | Transparent conductive film, and organic light-emitting device comprising same | |
JP2009070708A (ja) | 表示装置及び表示装置の製造方法 | |
US7825589B2 (en) | Display device and manufacturing method of the same | |
CN101188246A (zh) | 顶部发光型有机发光二极管及其制造方法 | |
JP2010079146A (ja) | 表示装置及び表示装置の製造方法 | |
CN100433400C (zh) | 有机高分子发光二极管装置及其应用的显示器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1126619 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1126619 Country of ref document: HK |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170124 Address after: Irish Ross Kang Wangjun Patentee after: Soras OLED Address before: Tokyo, Japan Patentee before: CASIO COMPUTER Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111228 Termination date: 20210728 |
|
CF01 | Termination of patent right due to non-payment of annual fee |