CN101354506B - Pixel structure of thin-film transistor LCD device - Google Patents
Pixel structure of thin-film transistor LCD device Download PDFInfo
- Publication number
- CN101354506B CN101354506B CN2007101194979A CN200710119497A CN101354506B CN 101354506 B CN101354506 B CN 101354506B CN 2007101194979 A CN2007101194979 A CN 2007101194979A CN 200710119497 A CN200710119497 A CN 200710119497A CN 101354506 B CN101354506 B CN 101354506B
- Authority
- CN
- China
- Prior art keywords
- film transistor
- tft
- pixel
- thin film
- gate line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention relates to a dot structure used for a film transistor LCD, comprising a first pixel and a second pixel; a first film transistor which drives the first pixel and a second film transistor which drives the second pixel are connected with data wires which are arranged between the first pixel and the second pixel; the invention also relates to a dot structure of the film transistor LCD, comprising a first pixel and a second pixel; a first film transistor which drives the first pixel and a second film transistor which drives the second pixel are connected with grid wires which are arranged between the first pixel and the second pixel; the two pixels respectively reduce the quantity of the original data line and the grid line by a half, thus saving the pixel space occupied by a plurality of original data wires and grid wires and realizing the dot structure of the film transistor LCD with single data wire or grid wire dual driving.
Description
Technical field
The present invention relates to a kind of dot structure of Thin Film Transistor-LCD, particularly a kind of employing forms data line (data line) or gate line (gate line) drive the dot structure of the Thin Film Transistor-LCD of adjacent two pixels.
Background technology
At present, Thin Film Transistor-LCD of the prior art (Thin Film Transistor-Liquid Crystal Display, hereinafter to be referred as TFT-LCD) all be to control a thin film transistor (TFT) (Thin Film Transistor by a data line and a gate line, hereinafter to be referred as TFT), drive a pixel, referring to Fig. 1.The dot structure 100 of this Thin Film Transistor-LCD comprises pixel (pixel) 101 and is positioned at the crossing gate line 102 of insulation and the TFT 104 of data line 103 intersections.TFT 104 drives pixel 101 as switch module, and its grid G is connected with gate line 102, and source class S is connected with data line 103, leaks level D and is connected with pixel 101.As can be seen, in the dot structure of Thin Film Transistor-LCD in the prior art, pixel 101 drives by a gate line 102 and TFT 104 of data line 103 common controls.When the resolution of TFT-LCD increases, can correspondingly increase the quantity of data line and gate line.Display panels for high resolving power TFT-LCD, increase because of data line or gate line quantity can appear, cause its respective length long, and the problem of various demonstrations appears, as: signal delay, increase the reduction of the pixel aperture ratio that live width causes in order to reduce signal delay, and also occur some easily to showing problems such as unfavorable at the place, limit of data line and gate line.
Summary of the invention
First aspect of the present invention provides the dot structure of a kind of TFT-LCD, in order to solve the demonstration problem of high-resolution display panels, realizes saving the shared pixel space of data line.
Second aspect of the present invention provides the dot structure of another kind of TFT-LCD, in order to solve the demonstration problem of high-resolution display panels, realizes saving the shared pixel space of gate line.
In order to realize first aspect of the present invention, the present invention provides following technical scheme by some embodiment: the dot structure of a kind of TFT-LCD, comprise first pixel and second pixel, second thin film transistor (TFT) that drives the first film transistor of described first pixel and drive described second pixel all is connected with data line between described first pixel and second pixel; Described the first film transistor is the thin film transistor (TFT) that malleation is opened; Described second thin film transistor (TFT) is the thin film transistor (TFT) that negative pressure is opened; Gate line is that preceding field signal malleation is opened the gate line that described the first film transistor, later half frame signal negative pressure are opened described second thin film transistor (TFT), and perhaps gate line is that preceding field signal negative pressure is opened described second thin film transistor (TFT), later half frame signal malleation is opened the transistorized gate line of described the first film.
Realize that some embodiments of the present invention make the quantity of original data line reduce half, thereby can save down a lot of original shared pixel space of data line.These spaces that save can suitably increase the width of data line, thereby reduction signal delay, simultaneously can also suitably improve aperture ratio of pixels, so technique scheme can satisfy large scale, high resolving power and development of High Aperture Ratio TFT-LCD design and the requirement that shows well.
In order to realize second aspect of the present invention, the present invention provides following technical scheme by some embodiment: the dot structure of a kind of TFT-LCD, comprise first pixel and second pixel, second thin film transistor (TFT) that drives the first film transistor of described first pixel and drive described second pixel all is connected with gate line between described first pixel and second pixel; Described the first film transistor is the thin film transistor (TFT) that malleation is opened; Described second thin film transistor (TFT) is the thin film transistor (TFT) that negative pressure is opened; Described gate line is that preceding field signal malleation is opened the gate line that described the first film transistor, later half frame signal negative pressure are opened described second thin film transistor (TFT), and perhaps described gate line is that preceding field signal negative pressure is opened described second thin film transistor (TFT), later half frame signal malleation is opened the transistorized gate line of described the first film.
Realize that other embodiment of the present invention make the quantity of original gate line reduce half, thereby can save down a lot of original shared pixel space of gate line.These spaces that save can suitably increase the width of gate line, thereby reduction signal delay, simultaneously can also suitably improve aperture ratio of pixels, so technique scheme can satisfy large scale, high resolving power and development of High Aperture Ratio TFT-LCD design and the requirement that shows well.
Compared with prior art, above-mentioned realization embodiments of the invention reduce by half by the quantity with legacy data line and gate line, thereby have realized the saving pixel space.A pixel space part that saves can be used for increasing the width of data line and gate line, thereby reduces signal delay, and another part can also be used to increasing aperture ratio of pixels.
Description of drawings
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail.
Fig. 1 is the structural representation of the dot structure of prior art TFT-LCD;
Fig. 2 is the structural representation of first embodiment of the dot structure of TFT-LCD of the present invention;
Fig. 3 is the structural representation of second embodiment of the dot structure of TFT-LCD of the present invention.
Embodiment
As shown in Figure 2, be the structural representation of first embodiment of the dot structure of TFT-LCD of the present invention.The dot structure 200 of present embodiment TFT-LCD comprises first pixel 201 and second pixel 202, and the 2nd TFT 204 that drives a TFT 203 of first pixel 201 and drive second pixel 202 all is connected with data line 205 between first pixel 201 and second pixel 202.The grid G of the one TFT 203 is connected with gate line 206, and source class S is connected with data line 205, leaks level D and is connected with first pixel 201; The grid G of the 2nd TFT204 is connected with gate line 206, and source class S is connected with data line 205, leaks level D and is connected with second pixel 202.
Wherein, in order not influence the wall scroll data line to adjacent first pixel in the left and right sides and the influence of second pixel, a TFT 203 of data line both sides and the 2nd TFT 204 adopt different structures, promptly make them have the functional structure of phase inverter.Present embodiment is preferably, the TFT that a TFT 203 opens for malleation, and 204 TFT for the negative pressure unlatching of the 2nd TFT can adopt semiconductor material to mix and realize the TFT of this reverse drive.The scope of the driving voltage of gate line signal can be-8V to 25V, and the signal of gate line in a frame done further to adjust, and makes it not only can satisfy forward (malleation) and starts a TFT 203, also can satisfy negative sense (negative pressure) and start the 2nd TFT 204.Present embodiment is preferably, and gate line is that preceding field signal malleation is opened the gate line that a TFT 203, later half frame signal negative pressure open the 2nd TFT 204.Promptly in the preceding field of gate line signal, the transmission forward voltage makes TFT 203 conductings of winning, and 204 of the 2nd TFT also are in off state, and the data line signal of this moment just is transferred to first pixel 201 that a TFT 203 drives; In the back field of gate line signal, the transmission negative voltage, promptly signal is in off state by just becoming negative, make the TFT203 that wins, and this moment log-on data line opposite side the 2nd TFT 204, the data line signal of this moment then is transferred to second pixel 202 that the 2nd TFT 204 drives.In signals transmission, can the data-driven integrated circuit (data drive IC) of data-signal be provided and provide the turntable driving integrated circuit (gate drive IC) of sweep signal well to realize above-mentioned functions to data line by control to gate line.
In the foregoing description, gate line can also be opened the gate line that the 2nd TFT 204, later half frame signal malleation open a TFT 203 for preceding field signal negative pressure.Promptly in the preceding field of gate line signal, the transmission negative voltage makes the 2nd TFT 204 conductings, and the data line signal transmission of data signals is given second pixel 202; In the back field of gate line signal, the transmission forward voltage makes TFT 203 conductings of winning, and the data line signal transmission of data signals is given first pixel 201.
In addition, by current-voltage (I-V) family curve of traditional hydrogenation non crystal silicon film transistor (a-Si:H TFT) as can be known, when the gate line brownout, cut-off current will increase.Therefore, present embodiment preferably, a TFT 203 and the 2nd TFT 204 adopt the base and doped TFT of polysilicon (poly-Si), promptly poly-Si TFT can reduce cut-off current effectively, keeps good TFT characteristic.
The switch of the neighbor of present embodiment by the forms data line traffic control left and right sides and the function of the input of signal have been realized the quantity of legacy data line has been reduced half, thereby have saved much the shared pixel space of data line originally.The pixel space of above-mentioned saving can suitably increase the width of data line, thereby reduces signal delay, can also suitably improve aperture ratio of pixels simultaneously.In addition, on the poly-Si substrate, carry out different doping by employing and realize reverse each other TFT control; Control the sequencing that TFT opens by the reversal TFT structure of data line, thus the input of control signal, the dot structure structure of the two TFT-LCD that drive of realization forms data line.
As shown in Figure 3, be the structural representation of second embodiment of the dot structure of TFT-LCD of the present invention.The dot structure 300 of present embodiment TFT-LCD comprises first pixel 301 and second pixel 302, and the 2nd TFT 304 that drives a TFT 303 of first pixel 301 and drive second pixel 302 all is connected with gate line 306 between first pixel 301 and second pixel 302.The grid G of the one TFT 303 is connected with gate line 306, and source class S is connected with data line 305, leaks level D and is connected with first pixel 301; The grid G of the 2nd TFT304 is connected with gate line 306, and source class S is connected with data line 305, leaks level D and is connected with second pixel 302.
In the present embodiment, the one TFT 303 of gate line both sides also adopts different structures to realize the function of phase inverter with the 2nd TFT 304, similar with a TFT 203 and the 2nd TFT 204 among the last embodiment, a TFT adopts malleation to start, another TFT then adopts negative pressure to start, and can adopt semiconductor material to mix and realize this oppositely driving of TFT each other.
Present embodiment preferably, a TFT 303 is the TFT that malleation is opened, 304 TFT for the negative pressure unlatching of the 2nd TFT.Gate line can be opened the gate line that a TFT 303, later half frame signal negative pressure open the 2nd TFT 304 for preceding field signal malleation; Gate line can also be opened the gate line that the 2nd TFT 304, later half frame signal malleation open a TFT 303 for preceding field signal negative pressure.
Present embodiment preferably, the cut-in voltage of a TFT 304 is a forward voltage; The cut-in voltage of the 2nd TFT 305 is a reverse voltage.Compare with a last embodiment, the present embodiment its working principles is similarly, does not repeat them here.Present embodiment can reduce the cut-off current of the TFT of previous frame better, reduces the shared space of gate line, reduces signal delay, and increases aperture opening ratio.
Compare with a last embodiment, present embodiment is the function by the input of the switch of the neighbor of both sides about single gate line control and signal, realized the quantity of original gate line has been reduced half, thereby saved a lot of original shared pixel space of gate line.Similarly, the pixel space of above-mentioned saving also can suitably increase the width of gate line, thereby reduces signal delay, can also suitably improve aperture ratio of pixels simultaneously.In addition, be on the poly-Si substrate, to carry out different doping by employing to realize reverse each other TFT control equally; Control the sequencing that TFT opens by the reversal TFT structure of gate line, thereby the input of control signal realizes the dot structure structure of the two Thin Film Transistor-LCDs that drive of single gate line.
Become big problem if can solve a-Si:H effectively at the cut-off current that negative voltage occurs, above-mentioned two embodiment of the present invention also can form this reverse each other TFT structure by adopting on the a-Si:H substrate, realize the dot structure structure of the two Thin Film Transistor-LCDs that drive of forms data line or gate line.
Above-mentioned two embodiment of the present invention are respectively that the quantity with legacy data line and gate line has reduced half, thereby have saved a lot of original data lines and the shared pixel space of gate line.An above-mentioned pixel space part that saves can be used to increase the width of data line and gate line, thereby reduces signal delay; Another part can be used to improve aperture ratio of pixels.In addition, by adopting reverse each other TFT structure, make that the sequencing of switch of TFT is controlled, thereby realized the dot structure structure of forms data line or the two Thin Film Transistor-LCDs that drive of gate line.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (6)
1. the dot structure of a Thin Film Transistor-LCD, comprise first pixel and second pixel, it is characterized in that: second thin film transistor (TFT) that drives the first film transistor of described first pixel and drive described second pixel all is connected with data line between described first pixel and second pixel; Described the first film transistor is the thin film transistor (TFT) that malleation is opened; Described second thin film transistor (TFT) is the thin film transistor (TFT) that negative pressure is opened; Gate line is that preceding field signal malleation is opened the gate line that described the first film transistor, later half frame signal negative pressure are opened described second thin film transistor (TFT), and perhaps gate line is that preceding field signal negative pressure is opened described second thin film transistor (TFT), later half frame signal malleation is opened the transistorized gate line of described the first film.
2. pel array according to claim 1 is characterized in that: the described the first film transistor and second thin film transistor (TFT) are polycrystalline SiTFT.
3. pel array according to claim 2 is characterized in that: described second thin film transistor (TFT) is the polycrystalline SiTFT of semiconductor doping.
4. the dot structure of a Thin Film Transistor-LCD, comprise first pixel and second pixel, it is characterized in that: second thin film transistor (TFT) that drives the first film transistor of described first pixel and drive described second pixel all is connected with gate line between described first pixel and second pixel; Described the first film transistor is the thin film transistor (TFT) that malleation is opened; Described second thin film transistor (TFT) is the thin film transistor (TFT) that negative pressure is opened; Described gate line is that preceding field signal malleation is opened the gate line that described the first film transistor, later half frame signal negative pressure are opened described second thin film transistor (TFT), and perhaps described gate line is that preceding field signal negative pressure is opened described second thin film transistor (TFT), later half frame signal malleation is opened the transistorized gate line of described the first film.
5. pel array according to claim 4 is characterized in that: the described the first film transistor and second thin film transistor (TFT) are polycrystalline SiTFT.
6. pel array according to claim 5 is characterized in that: described second thin film transistor (TFT) is the polycrystalline SiTFT of semiconductor doping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101194979A CN101354506B (en) | 2007-07-25 | 2007-07-25 | Pixel structure of thin-film transistor LCD device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101194979A CN101354506B (en) | 2007-07-25 | 2007-07-25 | Pixel structure of thin-film transistor LCD device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101354506A CN101354506A (en) | 2009-01-28 |
| CN101354506B true CN101354506B (en) | 2010-04-21 |
Family
ID=40307380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101194979A Active CN101354506B (en) | 2007-07-25 | 2007-07-25 | Pixel structure of thin-film transistor LCD device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101354506B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102759833B (en) * | 2012-07-27 | 2015-05-20 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN102832212A (en) * | 2012-08-20 | 2012-12-19 | 京东方科技集团股份有限公司 | Array substrate, display device and drive method thereof |
| CN102955309B (en) * | 2012-10-15 | 2015-12-09 | 京东方科技集团股份有限公司 | A kind of array base palte, display panel, display device and driving method thereof |
| CN103700321B (en) * | 2013-12-25 | 2018-07-13 | 京东方科技集团股份有限公司 | Dot structure, array substrate and display device |
| CN104485085B (en) | 2015-01-04 | 2017-07-21 | 京东方科技集团股份有限公司 | A kind of array base palte and display device |
| CN105047161B (en) * | 2015-08-26 | 2018-06-08 | 京东方科技集团股份有限公司 | Pixel unit driving device, method and display device |
| CN107045239A (en) * | 2017-04-05 | 2017-08-15 | 合肥京东方光电科技有限公司 | Array base palte and preparation method thereof, display panel and display device |
| CN108873524B (en) * | 2018-07-17 | 2021-01-26 | Tcl华星光电技术有限公司 | Display panel, method for improving performance of display panel and display device |
| CN109656070A (en) * | 2018-12-13 | 2019-04-19 | 武汉天马微电子有限公司 | Display panel and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1538229A (en) * | 1997-04-22 | 2004-10-20 | ���µ�����ҵ��ʽ���� | Liquid crystal display with image reading function image reading method and manufacturng method |
| CN1555506A (en) * | 2002-05-27 | 2004-12-15 | 三星电子株式会社 | Thin film transistor array panel for liquid crystal display |
| JP2007114778A (en) * | 2005-10-17 | 2007-05-10 | Samsung Electronics Co Ltd | Thin film transistor display plate |
| CN1963609A (en) * | 2006-12-12 | 2007-05-16 | 友达光电股份有限公司 | Pixel array, display panel thereof and display |
| CN1963647A (en) * | 2005-11-10 | 2007-05-16 | 群康科技(深圳)有限公司 | Liquid crystal display panel |
-
2007
- 2007-07-25 CN CN2007101194979A patent/CN101354506B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1538229A (en) * | 1997-04-22 | 2004-10-20 | ���µ�����ҵ��ʽ���� | Liquid crystal display with image reading function image reading method and manufacturng method |
| CN1555506A (en) * | 2002-05-27 | 2004-12-15 | 三星电子株式会社 | Thin film transistor array panel for liquid crystal display |
| JP2007114778A (en) * | 2005-10-17 | 2007-05-10 | Samsung Electronics Co Ltd | Thin film transistor display plate |
| CN1963647A (en) * | 2005-11-10 | 2007-05-16 | 群康科技(深圳)有限公司 | Liquid crystal display panel |
| CN1963609A (en) * | 2006-12-12 | 2007-05-16 | 友达光电股份有限公司 | Pixel array, display panel thereof and display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101354506A (en) | 2009-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101354506B (en) | Pixel structure of thin-film transistor LCD device | |
| CN110178174B (en) | Grid driving circuit, control method thereof and mobile terminal | |
| CN103280201B (en) | Gate drive apparatus and display device | |
| JP4163416B2 (en) | Liquid crystal display | |
| US8687761B2 (en) | Shift register circuit using a switch device | |
| CN102831860B (en) | Shifting register, drive method thereof, gate driver and display device | |
| CN102598144B (en) | Shift register, the scan signal line drive circuit possessing it and display device | |
| US11404007B2 (en) | Display substrate having a scan driving circuit with a plurality of shift registers and manufacturing method thereof | |
| CN106057143A (en) | Shifting register and operation method thereof, grid driving circuit and display device | |
| JP2006330682A (en) | Gate switch apparatus for amorphous silicon lcd | |
| CN102831861A (en) | Shifting register, drive method thereof, gate driver and display device | |
| US20210358361A1 (en) | Shift register unit and driving method thereof, gate drive circuit and display device | |
| CN108766377B (en) | Display panel and display device | |
| US11705048B2 (en) | Shift register unit, circuit structure, gate drive circuit, drive circuit and display device | |
| WO2022062415A1 (en) | Charge sharing circuit and method, display driving module and display apparatus | |
| US7265744B2 (en) | Liquid crystal display device and driving method thereof | |
| CN103412427A (en) | Liquid crystal display panel | |
| CN105372893A (en) | Pixel driving circuit, array substrate and liquid crystal display device | |
| CN105679266A (en) | Shutdown circuit, peripheral driving device and LCD panel | |
| WO2014173011A1 (en) | Shift register unit, shift register, and display apparatus | |
| TW508555B (en) | Active matrix type liquid crystal display device, its manufacture and its driving method | |
| KR20090108832A (en) | Inverter and display device having the same | |
| CN113506534B (en) | Display panel | |
| WO2009003418A1 (en) | Source drive device, lcd and driving method | |
| TW200423005A (en) | Display driving circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141208 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141208 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20141208 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20201202 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: Gaochuang (Suzhou) Electronics Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |