CN101354506B - Pixel structure of thin-film transistor LCD device - Google Patents

Pixel structure of thin-film transistor LCD device Download PDF

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CN101354506B
CN101354506B CN 200710119497 CN200710119497A CN101354506B CN 101354506 B CN101354506 B CN 101354506B CN 200710119497 CN200710119497 CN 200710119497 CN 200710119497 A CN200710119497 A CN 200710119497A CN 101354506 B CN101354506 B CN 101354506B
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film transistor
thin film
pixel
tft
gate line
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CN 200710119497
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CN101354506A (en
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马占洁
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北京京东方光电科技有限公司
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Abstract

The invention relates to a dot structure used for a film transistor LCD, comprising a first pixel and a second pixel; a first film transistor which drives the first pixel and a second film transistorwhich drives the second pixel are connected with data wires which are arranged between the first pixel and the second pixel; the invention also relates to a dot structure of the film transistor LCD, comprising a first pixel and a second pixel; a first film transistor which drives the first pixel and a second film transistor which drives the second pixel are connected with grid wires which are arranged between the first pixel and the second pixel; the two pixels respectively reduce the quantity of the original data line and the grid line by a half, thus saving the pixel space occupied by a plurality of original data wires and grid wires and realizing the dot structure of the film transistor LCD with single data wire or grid wire dual driving.

Description

薄膜晶体管液晶显示器的像素结构 The pixel structure of a thin film transistor liquid crystal display

技术领域 FIELD

[0001] 本发明涉及一种薄膜晶体管液晶显示器的像素结构,特别是一种采用单数据线(data line)或栅极线(gate line)驱动相邻两个像素的薄膜晶体管液晶显示器的像素结构。 [0001] The present invention relates to a pixel structure of a thin film transistor liquid crystal display, in particular a single data line (data line) or the gate line (gate line) driving two pixels adjacent to the pixel structure of a thin film transistor liquid crystal display .

背景技术 Background technique

[0002] 目前,现有技术中的薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display,以下简称TFT-LCD)均是通过一条数据线和一条栅极线来控制一个薄膜晶体管(Thin Film Transistor,以下简称TFT),驱动一个像素,参见图1 。 [0002] Currently, the prior art TFT LCD (Thin Film Transistor-Liquid Crystal Display, hereinafter referred to as TFT-LCD) are controlled by a thin film transistor a gate line and a data line (Thin Film Transistor, hereinafter referred to as the TFT), a pixel driver, see Fig. 该薄膜晶体管液晶显示器的像素结构100包括像素(pixel) 101和位于绝缘相交的栅极线102和数据线103相交处的TFT 104。 The pixel structure of a thin film transistor liquid crystal display 100 includes a TFT 104 103 pixels at the intersection (pixel) 101, and an insulating gate lines 102 and the data lines intersect. TFT 104作为开关组件驱动像素101,其栅极G与栅极线102连接, 源级S与数据线103连接,漏级D与像素101连接。 TFT 104 as a switching element driving the pixel 101, its gate G connected to the gate line 102, a source electrode S connected to the data line 103, drain 101 is connected to the pixel D. 可以看出,在现有技术中的薄膜晶体管液晶显示器的像素结构中,像素101是通过一条栅极线102和一条数据线103共同控制一个TFT 104来驱动的。 As can be seen, the pixel structure in the prior art thin film transistor liquid crystal display, the pixel 101 is controlled by a common gate line 102 and one data line 103 of a TFT 104 is driven. 当TFT-LCD的分辨率增加时,会相应地增加数据线和栅极线的数量。 When the TFT-LCD resolution increases, correspondingly increasing the number of data lines and gate lines. 对于高分辨率TFT-LCD的液晶显示面板,会出现因数据线或栅极线数量的增加,导致其相应长度过长,而出现各种显示的问题,如:信号延迟,为了减少信号延迟而增加线宽所造成的像素开口率的降低,以及在数据线和栅极线的边际处也容易出现一些对显示不利等问题。 For high-resolution TFT-LCD liquid crystal display panel, there will be increased due to the number of data lines or gate lines, resulting in the corresponding length is too long, the display of various problems, such as: a signal delay, in order to reduce signal delay reducing the pixel aperture ratio caused by increasing the line width and the margin at the data lines and gate lines are also easier to display other detrimental problems.

发明内容 SUMMARY

[0003] 本发明的第一个方面是提供一种TFT-LCD的像素结构,用以解决高分辨率的液晶显示面板的显示问题,实现节省数据线所占用的像素空间。 [0003] The first aspect of the present invention is to provide a TFT-LCD pixel structure, to solve the problem of displaying high-resolution liquid crystal display panel, the pixel to achieve saving of space occupied by the data line.

[0004] 本发明的第二个方面是提供另一种TFT-LCD的像素结构,用以解决高分辨率的液晶显示面板的显示问题,实现节省栅极线所占用的像素空间。 [0004] A second aspect of the present invention to provide an alternative pixel structure of a TFT-LCD for high-resolution liquid crystal display to solve the problem of the panel, the pixel to achieve saving of space occupied by the gate line.

[0005] 为了实现本发明的第一个方面,本发明通过一些实施例提供了如下的技术方案: 一种TFT-LCD的像素结构,包括第一像素和第二像素,驱动所述第一像素的第一薄膜晶体管和驱动所述第二像素的第二薄膜晶体管均与位于所述第一像素和第二像素之间的数据线连接;所述第一薄膜晶体管为正压开启的薄膜晶体管;所述第二薄膜晶体管为负压开启的薄膜晶体管;栅极线为前半帧信号正压开启所述第一薄膜晶体管、后半帧信号负压开启所述第二薄膜晶体管的栅极线,或者栅极线为前半帧信号负压开启所述第二薄膜晶体管、 后半帧信号正压开启所述第一薄膜晶体管的栅极线。 [0005] According to a first aspect of the present invention, the present invention provides a number of embodiments following technical solution: a pixel structure of a TFT-LCD, comprising first and second pixels, the first pixel drive a first thin film transistor and a second thin film transistor to drive the second pixel are located between the data line first and second pixels are connected; said first thin film transistor TFT is turned positive; a negative pressure of the second thin film transistor thin film transistor is turned on; gate line turn the first TFT is a front half-frame signal is positive, negative half frame signal gate line is turned on the second thin film transistor, or gate line to turn on the second thin film transistor is a first half-frame negative signal, the positive half-frame signal of the gate line is turned on first thin film transistor.

[0006] 实现本发明的一些实施例使得原有的数据线的数量减少了一半,从而能够节省下很多原来数据线所占用的像素空间。 [0006] Some embodiments of the present invention is implemented so that the number of the original data lines is reduced by half, thereby saving many pixel space originally occupied by the data line. 节省下来的这些空间可以适当地增加数据线的宽度, 从而降低信号延迟,同时还可以适当地提高像素的开口率,因此上述技术方案可以很好地满足大尺寸、高分辨率以及高开口率TFT-LCD设计与显示的要求。 These space savings can be appropriately increase the width of the data line, thereby reducing signal delay, but can also suitably enhance the aperture ratio of pixels, thus the above technical solution can satisfy a large size, high resolution and a high aperture ratio of the TFT -LCD display design and requirements.

[0007] 为了实现本发明的第二个方面,本发明通过一些实施例提供了如下的技术方案:一种TFT-LCD的像素结构,包括第一像素和第二像素,驱动所述第一像素的第一薄膜晶体管和驱动所述第二像素的第二薄膜晶体管均与位于所述第一像素和第二像素之间的栅极线连接;所述第一薄膜晶体管为正压开启的薄膜晶体管;所述第二薄膜晶体管为负压开启的薄膜晶体管;所述栅极线为前半帧信号正压开启所述第一薄膜晶体管、后半帧信号负压开启所述第二薄膜晶体管的栅极线,或者所述栅极线为前半帧信号负压开启所述第二薄膜晶体管、后半帧信号正压开启所述第一薄膜晶体管的栅极线。 [0007] To achieve the second aspect of the present invention, the present invention provides a number of embodiments following technical solution: a pixel structure of a TFT-LCD, comprising first and second pixels, the first pixel drive a first thin film transistor and a second thin film transistor to drive the second gate line connected to each pixel between the first pixel and the second pixel located; the first thin film transistor TFT is turned positive ; negative pressure of the second thin film transistor thin film transistor is turned on; the gate line to turn on the first thin film transistor is a first half frame signal positive, negative half frame signal is turned on the second thin film transistor gate line, the gate line or the second thin film transistor is turned on for the first half frame signal is negative, the positive half-frame signal of the gate line is turned on first thin film transistor.

[0008] 实现本发明的另一些实施例使得原有的栅极线的数量减少了一半,从而能够节省下很多原来栅极线所占用的像素空间。 [0008] Other embodiments implement embodiments of the present invention is such that the number of the original gate line is reduced by half, thereby saving many pixel space originally occupied by the gate line. 节省下来的这些空间可以适当地增加栅极线的宽度,从而降低信号延迟,同时还可以适当地提高像素的开口率,因此上述技术方案可以很好地满足大尺寸、高分辨率以及高开口率TFT-LCD设计与显示的要求。 These space savings can be appropriately increased width of the gate line, thereby reducing signal delay, but can also suitably enhance the aperture ratio of pixels, thus the above technical solution can satisfy a large size, high resolution and a high aperture ratio TFT-LCD display with design requirements.

[0009] 与现有技术相比,上述实现本发明的实施例通过将原有数据线和栅极线的数量减半,从而实现了节省像素空间。 [0009] Compared with the prior art, the above-described embodiments of the present invention is implemented by the existing number of data lines and gate lines is halved, thereby achieving space saving pixel. 节省下来的像素空间一部分可以用来增加数据线和栅极线的宽度,从而降低信号延迟,另一部分还可以用来增加像素的开口率。 A portion of the pixel space saved may be used to increase the width of the data lines and the gate lines, thereby reducing signal delay, the other part can also be used to increase the aperture ratio of the pixel.

附图说明 BRIEF DESCRIPTION

[0010] 下面结合附图对本发明的具体实施方式作进一步详细的说明。 [0010] The following drawings of specific embodiments of the present invention will be further described in detail in conjunction. [0011] 图1为现有技术TFT-LCD的像素结构的结构示意图; [0012] 图2为本发明TFT-LCD的像素结构的第一实施例的结构示意图; [0013] 图3为本发明TFT-LCD的像素结构的第二实施例的结构示意图。 [0011] FIG. 1 is a schematic structural diagram of a prior art pixel structure of TFT-LCD; structural diagram of a first embodiment of a pixel of a TFT-LCD structure [0012] FIG. 2 of the present invention; [0013] 3 of the present invention, FIG. a second configuration diagram of an embodiment of a pixel structure of the TFT-LCD.

具体实施方式 Detailed ways

[0014] 如图2所示,为本发明TFT-LCD的像素结构的第一实施例的结构示意图。 [0014] As shown in FIG 2, a schematic view of the structure of a first embodiment of a pixel structure of a TFT-LCD of the present invention. 本实施例TFT-LCD的像素结构200包括第一像素201和第二像素202,驱动第一像素201的第一TFT 203和驱动第二像素202的第二TFT 204均与位于第一像素201和第二像素202之间的数据线205连接。 Example pixel structure of the present embodiment of the TFT-LCD 200 comprises a first and a second pixel 201 pixel 202 pixel 201 first drives the first TFT 203 and the second pixel of the second drive TFT 204 202 are the first pixel 201 and a second data line between the pixel 202205 connected. 第一TFT 203的栅极G与栅极线206连接,源级S与数据线205连接,漏级D与第一像素201连接;第二TFT204的栅极G与栅极线206连接,源级S与数据线205连接,漏级D与第二像素202连接。 Gate G of the first TFT 203 of the gate line 206 is connected to a source electrode S connected to the data line 205, drain D 201 is connected to the first pixel; TFT204 second gate G connected to the gate line 206, a source-level S is connected to the data line 205, drain D is connected to the second pixel 202.

[0015] 其中,为了不影响单条数据线对左右两侧相邻的第一像素和第二像素的影响,数据线两侧的第一TFT 203和第二TFT 204采用不同的结构,即使得它们具有反相器的功能结构。 [0015] wherein, in order not to affect the impact on the single data line of the left and right sides of adjacent first and second pixels, the first TFT 203 and the data line on both sides of the second TFT 204 different configuration, leaving them a functional configuration of an inverter. 本实施例优选为,第一TFT 203为正压开启的TFT,第二TFT 204则为负压开启的TFT,可以采用半导体材料掺杂来实现这种反向驱动的TFT。 This embodiment is a preferred embodiment, the first TFT 203 is a TFT is turned on a positive pressure, negative pressure compared to the second TFT is turned on a TFT 204, doped semiconductor material can be achieved using such reverse driving TFT. 栅极线信号的驱动电压的范围可以是-8V至25V,将栅极线在一帧中的信号作进一步的调整,使它不但可以满足正向(正压)启动第一TFT 203,也可以满足负向(负压)启动第二TFT 204。 Range of the driving voltage of the gate signal line may be -8V to 25V, the gate line signal in one frame for further adjustment, it will not only meet the forward (positive) activating the first TFT 203, may be start the second TFT 204 satisfy the negative (negative pressure). 本实施例优选为,栅极线为前半帧信号正压开启第一TFT 203、后半帧信号负压开启第二TFT 204的栅极线。 This embodiment is a preferred embodiment, the first TFT 203 of the gate line is turned on for the first half frame signal is positive, negative half frame signal turns on the second gate line 204 of the TFT. 即在栅极线信号的前半帧内,传输正向电压,使得第一TFT 203导通,第二TFT 204则还处于关断状态,此时的数据线信号只是传输给第一TFT 203驱动的第一像素201 ;在栅极线信号的后半帧内,传输负向电压,即信号由正变负,使得第一TFT203处于关断状态,而此时启动数据线另一侧第二TFT 204,此时的数据线信号则传输给第二TFT 204驱动的第二像素202。 I.e., the first half frame in the gate line signals, transmitted forward voltage, so that the first TFT 203 is turned on, also a second TFT 204 in the OFF state, only this time the data line signal transmitted to the first driving TFT 203 a first pixel 201; in the latter half frame, the signal transmission line to a negative gate voltage, i.e., from positive to negative signal, such that the first TFT203 is in an off state, at a time when the other side starts the data line of the second TFT 204 in this case the data line signal is transmitted to the second pixel 202 of the second TFT 204 is driven. 在信号传输过程中,可以通过控制向数据线提供数据信号的数据驱动集成电路(datadrive IC)和向栅极线提供扫描信号的扫描驱动集成电路(gate drive IC)来很好的实现上述功能。 During signal transmission, the data driving integrated circuit may be provided (datadrive IC) to provide a data signal and a scan driving integrated circuit (gate drive IC) to achieve a good function of the above-described scanning signal to the gate line by controlling the data lines.

[0016] 上述实施例中,栅极线还可以为前半帧信号负压开启第二TFT 204、后半帧信号正压开启第一TFT 203的栅极线。 [0016] The above-described embodiment, the gate line may also be turned on before the second half-frame negative signal TFT 204, a positive pressure signal is turned on after the first half frame TFT gate line 203. 即在栅极线信号的前半帧内,传输负向电压,使得第二TFT 204导通,数据线信号传输数据信号给第二像素202 ;在栅极线信号的后半帧内,传输正向电压,使得第一TFT 203导通,数据线信号传输数据信号给第一像素201。 I.e., the first half frame, the signal transmission line to a negative gate voltage, so that the second TFT 204 is turned on, the data signal transmission line to the second pixel data signal 202; the gate line in the half-frame signal, the forward transmission voltage, such that a first TFT 203 is turned on, the data signal transmission line to a first pixel data signal 201. [0017] 此外,由传统的氢化非晶硅薄膜晶体管(a-Si:H TFT)的电流-电压(I_V)特性曲线可知,当栅极线电压过低时,截止电流将增大。 [0017] Further, the conventional hydrogenated amorphous silicon thin film transistor (a-Si: H TFT) current - voltage (I_V) curve shows that, when the gate line voltage is too low, off-current increases. 因此,本实施例优选地,第一TFT 203和第二TFT 204都采用多晶硅(poly-Si)基掺杂的TFT,即poly-Si TFT,可以有效地降低截止电流,保持良好的TFT特性。 Accordingly, the preferred embodiment of the present embodiment, the first TFT 203 and TFT 204 are used second polysilicon (poly-Si) TFT-yl-doped, i.e., poly-Si TFT, can effectively reduce the off current, good TFT characteristics.

[0018] 本实施例通过单数据线控制左右两侧的相邻像素的开关与信号的输入的功能,实现了将原有数据线的数量减少了一半,从而节省了很多原来数据线所占用的像素空间。 [0018] The present embodiment features the adjacent pixel signal of the input switch and the left and right sides of the data line by a single control, to achieve the original number of data lines is reduced by half, thereby saving a lot of data lines occupied by the original pixel space. 上述节省的像素空间可以适当地增加数据线的宽度,从而降低信号延迟,同时还可以适当地提高像素的开口率。 The above pixel space savings can be appropriately increase the width of the data line, thereby reducing signal delay, but can also suitably enhance the aperture ratio of pixels. 此外,通过采用在poly-Si衬底上进行不同的掺杂来实现互为反向的TFT控制;通过数据线的反向型TFT结构来控制TFT开启的先后顺序,从而控制信号的输入,实现单数据线双驱动的TFT-LCD的像素结构结构。 In addition, achieved by using different dopants on a poly-Si TFT controls the opposite directions of the substrate; controlling TFT to be turned by reversing the order type TFT structure data lines to control the input signal, to achieve single dual drive pixel data line structure as the TFT-LCD.

[0019] 如图3所示,为本发明TFT-LCD的像素结构的第二实施例的结构示意图。 [0019] FIG. 3, a schematic diagram of the structure of a second embodiment of a pixel structure of a TFT-LCD of the invention. 本实施例TFT-LCD的像素结构300包括第一像素301和第二像素302,驱动第一像素301的第一TFT 303和驱动第二像素302的第二TFT 304均与位于第一像素301和第二像素302之间的栅极线306连接。 This embodiment of the TFT-LCD pixel structure 300 includes a first and a second pixel 301 pixel 302 pixel 301 first drives the first TFT 303 and the driving of the second pixel 302 and a second TFT 304 are located between the first pixel 301 and between the second gate line 306. the pixel 302. 第一TFT 303的栅极G与栅极线306连接,源级S与数据线305连接,漏级D与第一像素301连接;第二TFT304的栅极G与栅极线306连接,源级S与数据线305连接,漏级D与第二像素302连接。 Gate G of the first TFT 303 of the gate line 306 is connected to a source electrode S connected to the data line 305, drain D is connected to the first pixel 301; TFT304 second gate G connected to the gate line 306, a source-level S is connected to the data line 305, drain D is connected to the second pixel 302.

[0020] 本实施例中,栅极线两侧的第一TFT 303和第二TFT 304也采用不同的结构实现反相器的功能,与上一实施例中的第一TFT 203和第二TFT 204类似, 一个TFT采用正压启动,另一个TFT则采用负压启动,可以采用半导体材料掺杂来实现这种互为反向TFT的驱动。 [0020] In this embodiment, the first TFT and the second TFT 303 on both sides of the gate line 304 functions also used to achieve a different configuration of the inverter, a first embodiment of the TFT and the second TFT 203 in the previous embodiment Similarly 204, a TFT start positive pressure, a negative pressure is used to start another TFT, a semiconductor material doped to achieve such mutual reverse driving of the TFT may be employed.

[0021] 本实施例优选地,第一TFT 303为正压开启的TFT,第二TFT 304则为负压开启的TFT。 [0021] Preferably the present embodiment, the first TFT 303 of the TFT is turned on at a positive pressure, negative pressure compared to the second TFT 304 is turned on TFT. 栅极线可以为前半帧信号正压开启第一TFT 303、后半帧信号负压开启第二TFT 304 的栅极线;栅极线还可以为前半帧信号负压开启第二TFT 304、后半帧信号正压开启第一TFT 303的栅极线。 Gate line may be opened for the first half of the first frame signal pressure TFT 303, half frame suction opening gate signal line of the second TFT 304; gate lines may also be turned on before the second half-frame negative signal TFT 304, after open field signal pressure line 303 of the first TFT gate.

[0022] 本实施例优选地,第一TFT 304的开启电压为正向电压;第二TFT 305的开启电压为反向电压。 [0022] Preferably the present embodiment, the threshold voltage of the first TFT 304 of the forward voltage; turn-on voltage of the second TFT 305 is a reverse voltage. 与上一实施例相比,本实施例工作的基本原理是类似的,在此不再赘述。 Compared with the previous embodiment, the basic principle of working of the present embodiment is similar to the embodiment, not described herein again. 本实施例可以更好地降低上一帧的TFT的截止电流,减少栅极线所占用的空间,减小信号延迟, 以及增大开口率。 The present embodiment may be better to reduce the off current of a TFT, and reduce the space occupied by the gate line, the signal delay is reduced, and increase the aperture ratio.

[0023] 与上一实施例相比,本实施例是通过单栅极线控制上下两侧的相邻像素的开关与信号的输入的功能,实现了将原有栅极线的数量减少了一半,从而节省了很多原来栅极线所占用的像素空间。 [0023] Compared with the previous embodiment, the present embodiment is a control input of the adjacent pixels of the upper and lower sides of the switch through a single gate signal lines, and a number of the previous gate line is reduced by half , thus saving a lot of the original pixel space occupied by the gate line. 类似地,上述节省的像素空间也可以适当地增加栅极线的宽度,从而降低信号延迟,同时还可以适当地提高像素的开口率。 Similarly, the above-described pixel space saving may be appropriate to increase the width of the gate line, thereby reducing signal delay, but can also suitably enhance the aperture ratio of pixels. 此外,同样是通过采用在poly-Si衬底上进行不同的掺杂来实现互为反向的TFT控制;通过栅极线的反向型TFT结构来控制TFT开启的先后顺序,从而控制信号的输入,实现单栅极线双驱动的薄膜晶体管液晶显示器的像素结构结构。 Further, by using the same poly-Si on the substrate to achieve a different doping TFT controls the opposite directions; controlling TFT to be turned by reversing the order type TFT structure the gate line, so that the control signal input, to achieve a single-gate structure as the pixel driving line double thin film transistor liquid crystal display.

[0024] 如果能够有效地解决a-Si :H在负向电压出现的截止电流变大的问题,本发明上述两个实施例也可以通过采用在a-Si :H衬底上来形成这种互为反向的TFT结构,实现单数据线或者栅极线双驱动的薄膜晶体管液晶显示器的像素结构结构。 [0024] If you can effectively solve the a-Si: H in the off-current to the negative voltage occurs becomes large, the above two embodiments of the present invention may also be employed by the a-Si: H is formed onto a substrate such interconversions reverse TFT structure, the structure of a single pixel structure to realize the data line or the gate line driving double thin film transistor liquid crystal display is.

[0025] 本发明上述两个实施例分别是将原有数据线和栅极线的数量减少了一半,从而节省了很多原来数据线和栅极线所占用的像素空间。 [0025] Example embodiments of the present invention are the above two the number of original data and gate lines is reduced by half, thus saving a lot of the original pixel space data lines and gate lines occupied. 上述节省下来的像素空间一部分可以用于增加数据线和栅极线的宽度,从而降低信号延迟;另一部分可以用于提高像素的开口率。 Above a portion of the pixel space saved may be used to increase the width of the data lines and the gate lines, thereby reducing signal delay; another part may be used to increase the pixel aperture ratio. 此外,通过采用互为反向的TFT结构,使得TFT的开关的先后顺序得以控制,从而实现了单 Further, by using the TFT structure the opposite directions, so that the order of switching TFT is controlled, thereby to achieve a single

数据线或者栅极线双驱动的薄膜晶体管液晶显示器的像素结构结构。 The structure pixel data line or the gate line driving double thin film transistor liquid crystal display.

[0026] 最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。 [0026] Finally, it should be noted that: the above embodiments are intended to illustrate the present invention, rather than limiting;. Although the present invention has been described in detail embodiments, those of ordinary skill in the art should be understood: may still be made to the technical solutions described in each embodiment of the modified or part of the technical features equivalents; as such modifications or replacements do not cause the essence of corresponding technical solutions to depart from the technical solutions of the embodiments of the present invention and scope.

Claims (6)

  1. 一种薄膜晶体管液晶显示器的像素结构,包括第一像素和第二像素,其特征在于:驱动所述第一像素的第一薄膜晶体管和驱动所述第二像素的第二薄膜晶体管均与位于所述第一像素和第二像素之间的数据线连接;所述第一薄膜晶体管为正压开启的薄膜晶体管;所述第二薄膜晶体管为负压开启的薄膜晶体管;栅极线为前半帧信号正压开启所述第一薄膜晶体管、后半帧信号负压开启所述第二薄膜晶体管的栅极线,或者栅极线为前半帧信号负压开启所述第二薄膜晶体管、后半帧信号正压开启所述第一薄膜晶体管的栅极线。 The pixel structure of a thin film transistor liquid crystal display, comprising first and second pixels, wherein: the first pixel drive first thin film transistor and a second thin film transistor to drive the second pixel are located as data line between said first and second pixels; said first thin film transistor is a thin film transistor is turned positive; a negative pressure of the second thin film transistor thin film transistor is turned on; the gate line signal for the first half frame pressure of the first TFT is turned on, the negative half-frame signal of the gate line is turned on second thin film transistor, or the gate line turn on the second thin film transistor is negative the first half frame signal, the signal field the positive pressure opening of the first thin film transistor gate line.
  2. 2. 根据权利要求1所述的像素阵列,其特征在于:所述第一薄膜晶体管和第二薄膜晶体管为多晶硅薄膜晶体管。 2. The pixel array of claim 1, wherein: said first thin film transistor and the second thin film transistor is a polysilicon thin film transistor.
  3. 3. 根据权利要求2所述的像素阵列,其特征在于:所述第二薄膜晶体管为半导体掺杂的多晶硅薄膜晶体管。 3. The pixel array of claim 2, wherein: said second thin film transistor is a semiconductor doped polysilicon thin film transistor.
  4. 4. 一种薄膜晶体管液晶显示器的像素结构,包括第一像素和第二像素,其特征在于:驱动所述第一像素的第一薄膜晶体管和驱动所述第二像素的第二薄膜晶体管均与位于所述第一像素和第二像素之间的栅极线连接;所述第一薄膜晶体管为正压开启的薄膜晶体管;所述第二薄膜晶体管为负压开启的薄膜晶体管;所述栅极线为前半帧信号正压开启所述第一薄膜晶体管、后半帧信号负压开启所述第二薄膜晶体管的栅极线,或者所述栅极线为前半帧信号负压开启所述第二薄膜晶体管、后半帧信号正压开启所述第一薄膜晶体管的栅极线。 A pixel structure of a thin film transistor liquid crystal display, comprising first and second pixels, wherein: the first pixel drive first thin film transistor and the second thin film transistor driving the second pixel with the average in the first pixel and the gate line is connected between the second pixel; thin film transistor of the first TFT is turned positive; a negative pressure of the second thin film transistor is a thin film transistor is turned on; the gate open line pressure signal for the first half frame the first thin film transistor, half frame suction opening gate line signal of the second thin film transistor, or the gate line is turned on for the first half of the second frame signal underpressure a thin film transistor, the field pressure signal opening the first gate line of the thin film transistor.
  5. 5. 根据权利要求4所述的像素阵列,其特征在于:所述第一薄膜晶体管和第二薄膜晶体管为多晶硅薄膜晶体管。 The pixel array according to claim 4, wherein: said first thin film transistor and the second thin film transistor is a polysilicon thin film transistor.
  6. 6. 根据权利要求5所述的像素阵列,其特征在于:所述第二薄膜晶体管为半导体掺杂的多晶硅薄膜晶体管。 6. The pixel array of claim 5, wherein: said second thin film transistor is a semiconductor doped polysilicon thin film transistor.
CN 200710119497 2007-07-25 2007-07-25 Pixel structure of thin-film transistor LCD device CN101354506B (en)

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