CN101354335A - Method for detecting interlayer adhesion force and preparation method of detecting test piece - Google Patents
Method for detecting interlayer adhesion force and preparation method of detecting test piece Download PDFInfo
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- CN101354335A CN101354335A CNA2007100443442A CN200710044344A CN101354335A CN 101354335 A CN101354335 A CN 101354335A CN A2007100443442 A CNA2007100443442 A CN A2007100443442A CN 200710044344 A CN200710044344 A CN 200710044344A CN 101354335 A CN101354335 A CN 101354335A
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Abstract
The invention discloses a testing method of interlayer adhesion and a manufacturing method of a test strip, wherein, the testing method includes: a strip to be tested is provided, which is provided with a first film and a second film; the stress condition of the strip to be tested is determined; the technological conditions of a third film to grow are determined; the third film grows on the strip to be tested; the test strip is formed which is under the condition of tensile stress; the adhesion between the first film and the second film is tested by the four point bending method. The testing method of the invention and the manufacturing method of the test strip improve the feasibility of testing the adhesion between the first film and the second film by utilizing the four point bending method by ensuring the test strip is under the condition of tensile stress, and enhance the accuracy and the repeatability of test results.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of detection method of interlayer adhesion force and detection specimen preparation method.
Background technology
In the ic manufacturing process, often need to form the film of multilayer, and along with the develop rapidly of integrated circuit, people are to having higher requirement in the reliability and the serviceable life of film.For this reason, to the film reliability of applying with material impact is arranged serviceable life, the adhesiveness between thin film and adjacent films also more and more receives publicity, and becomes one of important indicator of weighing film quality.
At present, the detection method of using comparatively general film interlayer adhesion force is four-point bending method (4-point bend test), Fig. 1 is the structural representation that existing interlayer adhesion force detects test piece, as shown in Figure 1, the growth the first film 101 and second film 102 on silicon substrate 100, form test piece to be detected, the detection of so-called interlayer adhesion force is exactly the detection at this double-layer films 101 and 102 s' adhesion.Usually before utilizing four-point bending method that the adhesion between it is detected; the 3rd film 103 (it can be dielectric layer) that the one deck of also need growing on second film 102 is used to protect; then; utilize the 3rd film 103 that epoxy resin 104 will this test piece to be detected and a substrate (for obtaining testing result comparatively accurately; this substrate be generally the surface not growing film and not with the silicon chip of figure) 105 adhere to each other, be formed for testing the detection test piece of the interlayer adhesion force between the first film 101 and second film 102.In addition, for easy to detect, can also be pre-formed fluting 109 at these substrate 105 back sides.
Fig. 2 is that the position between detection test piece in the existing four-point bending method and 4 concerns synoptic diagram, as shown in Figure 2, be positioned between 4 110a, 110b, 110c and the 110d of four-point bending method checkout equipment detecting test piece, and to have a substrate 105 of fluting 109 downward on the order surface.Wherein, the center of top 2 110c and the test piece of 110d distance detecting is nearer, the center of following 2 o'clock 110a and the test piece of 110b distance detecting (in other words with respect to top 2 o'clock 110c and opened far in 110d minute) far away; And the center of top 2 110c and 110d and following 2 110a and 110b is all corresponding to fluting 109 residing positions.
Fig. 3 is the synoptic diagram that existing four-point bending method detects interlayer adhesion force, as shown in Figure 3, when beginning to detect, apply certain power 130 on superincumbent 2 110c and the 110d, and slowly increase the size of this power, order detects test piece and bends, disconnect fully shown among the figure 120 until fluting, the state that splits shown in 121 among double- layer films 101 and 102 the formation figure, at this moment, go up the size of applied force according to 2 110c and 110d in the above, can calculate the size that obtains the adhesion between double- layer films 101 and 102 by formula (1):
Understand the implication of formula (1) in conjunction with Fig. 2, Fig. 3: wherein, G is strain energy rate (Strain energy release rate), and it has represented the size of interlayer adhesion force; P is that 2 110c and 110d go up the size of applied force in the above, and l is that top 2 110c and 110d are to the distance between following 2 110a and the 110b; B is for detecting test piece width (not shown); H is the matrix thickness of (comprising silicon substrate 100 and the first film 101 among the figure); E is matrix elastic modulus (elastic modulus of the substrate material); υ is matrix Poisson ratio (Poisson ' s ratio of the substrate).Can see, parameter b in the formula (1), E, υ, h determine by the characteristic that detects test piece itself, parameter l then can be by the distance between 4 of four-point bending method testing apparatus and is determined, therefore, just can obtain the size of the adhesion between double- layer films 101 and 102 according to the size of top 2 110c and 110d applied force p.
Yet, utilizing four-point bending method that the interlayer adhesion force of film is detected has relatively high expectations to the state that detects test piece, its testing result often can not be satisfactory, and there is bigger difference in the possibility of result that same double-layer films is detected, even the phenomenon that detection is not come out occurs sometimes.Especially also need to cover the 3rd film of one deck protection usefulness on double-layer films to be detected, and adhere to the not silicon chip of long film of surface, the uncertainty that this has further increased the four-point bending method testing result has influenced the accuracy of testing result.
A kind of method of utilizing laser pulse to detect the interface layer adhesion has been proposed in the Chinese patent application that on Dec 21st, 2005, disclosed publication number was CN1711467A, it utilizes laser pulse directly the one deck in the double-layer films to be impacted, producing shock wave at the interface, utilize sensor breaking at the interface again, when breaking according to generation the energy of used laser pulse and wavelength determine two-layer between at the interface adhesion strength.But, if will adopt this method, then need to buy new laser pulse device and checkout equipment, cause the rising of production cost.
Summary of the invention
The invention provides a kind of detection method of interlayer adhesion force and detect the specimen preparation method, to improve the accuracy that existing interlayer adhesion force detects.
The invention provides a kind of detection method of interlayer adhesion force, comprise step:
Test piece to be detected is provided, and has the first film and second film in the described test piece to be detected;
Determine the stress state of described test piece to be detected;
The process conditions of definite the 3rd film that will grow;
Growth regulation three films in described test piece to be detected;
Form and detect test piece, and described detection test piece is in the tension stress state;
Utilize four-point bending method to detect adhesion between the described the first film and second film.
Wherein, described the 3rd film comprises silicon oxide layer.
Preferably, described the 3rd film is a siof layer, and the thickness of described the 3rd film 2000 to
Between.
Wherein, described process conditions comprise the kind and the flow of process time, reacting gas.
Wherein, the described the first film and second film comprise any in metal level, dielectric layer or the semiconductor layer respectively.
Wherein, described second film comprises the silicon nitride layer of carbon dope.
Wherein, between the substrate of described test piece to be detected and the described the first film, can also have one deck cushion, described cushion can comprise silicon oxide layer.
Wherein, the size of described tension stress is between 0 to 50MPa.
The present invention has the detection specimen preparation method of a kind of interlayer adhesion force of identical or relevant art feature, comprises step:
Test piece to be detected is provided, and has the first film and second film in the described test piece to be detected;
Determine the stress state of described test piece to be detected;
The process conditions of definite the 3rd film that will grow;
Growth regulation three films in described test piece to be detected;
The 3rd film and substrate in the described test piece to be detected are sticked together, form and detect test piece, and described detection test piece is in the tension stress state.
Wherein, described the 3rd film comprises silicon oxide layer.
Wherein, described the 3rd film comprises siof layer.
Wherein, the thickness of described the 3rd film 2000 to
Between.
Wherein, described process conditions comprise the kind and the flow of process time, reacting gas.
Wherein, the described the first film and second film comprise any in metal level, dielectric layer or the semiconductor layer respectively.
Wherein, described second film can be the silicon nitride layer of carbon dope.
Wherein, between the substrate of described test piece to be detected and the described the first film, also has one deck cushion.
Wherein, comprise silicon oxide layer at described cushion.
Wherein, the size of described tension stress is between 0 to 50MPa.
Compared with prior art, the present invention has the following advantages:
The detection method of interlayer adhesion force of the present invention and detection specimen preparation method, on between the first film that detects test piece and second film, formed the 3rd film, by thickness or the process conditions of adjusting the 3rd film the stress state that detects test piece is adjusted, order detects test piece and be in the tension stress state when detecting interlayer adhesion force.Adopt the detection method of interlayer adhesion force of the present invention, increased the feasibility that adhesion detects between double-layer films, improved the repeatability and the accuracy of testing result.
The detection method of interlayer adhesion force of the present invention and detection specimen preparation method, by adjustment more accurately to the process conditions of the 3rd film, can also make each detect test piece and not only all be in the tension stress state, and the stress intensity that has is also basic identical, reduced further to have improved the accuracy of testing result because of detecting the error of the interlayer adhesion force testing result that test piece stress intensity difference causes.
Description of drawings
Fig. 1 is the structural representation that existing interlayer adhesion force detects test piece;
Fig. 2 is that the position between detection test piece in the existing four-point bending method and 4 concerns synoptic diagram;
Fig. 3 is the synoptic diagram that existing four-point bending method detects interlayer adhesion force;
Fig. 4 is in synoptic diagram under the tension stress state for detecting test piece among the present invention;
Fig. 5 is in synoptic diagram under the compressive stress state for detecting test piece among the present invention;
Fig. 6 is the process flow diagram of first embodiment of the detection method of interlayer adhesion force of the present invention;
Fig. 7 is the sectional view of test piece to be detected in the first embodiment of the invention;
Fig. 8 is the detection test piece sectional view in the first embodiment of the invention;
Fig. 9 is the sectional view of test piece to be detected in the second embodiment of the invention;
Figure 10 is the detection test piece sectional view in the second embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Disposal route of the present invention can be widely used in the every field; and can utilize many suitable material; be to be illustrated below by specific embodiment; certainly the present invention is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention far and away.
Secondly, the present invention utilizes synoptic diagram to describe in detail, when the embodiment of the invention is described in detail in detail, for convenience of explanation, the sectional view of expression device architecture can be disobeyed general ratio and be done local the amplification, should be with this as limitation of the invention, in addition, in the making of reality, should comprise the three dimensions size of length, width and the degree of depth.
Among the present invention, the test piece before growth regulation three films is test piece to be detected; Test piece to be detected and substrate (be generally the surface does not have growing film and not with the silicon chip of the figure) back that adheres to each other form for detecting test piece.
Reliability and life characteristic in order to ensure device meet the demands, often need the adhesion size between the checking double-layer films, yet, four-point bending method detection method commonly used can be subjected to influence of various factors, the state that detects test piece is had relatively high expectations, often can not obtain testing result more accurately in the practice.For this reason, the present invention proposes a kind of detection method of new interlayer adhesion force and detect the specimen preparation method, to improve the accuracy of its testing result.
Find by a large amount of experiments and analysis, detect the influence of the residing stress state of test piece when the testing result of adhesion can be subjected to detecting.When each detects the residing stress state of test piece not simultaneously, the testing result of the adhesion of same double-layer films is often differed far away.
The stress state that detects test piece can be divided into two kinds of tension stress and compressive stress.Fig. 4 is in synoptic diagram under the tension stress state for detecting test piece among the present invention; as shown in Figure 4; have the first film 401 and second film 402 on the silicon substrate 400; the 3rd film 403 of protection usefulness of on second film 402, also having grown, and utilize the 3rd film 403 that epoxy resin 404 will this test piece to be detected and surface not to have growing film and do not stick together to form the detection test piece with the silicon chip 405 of figure.This detection test piece is in the state of tension stress at this moment, bends to silicon substrate 400 directions.
Fig. 5 is in synoptic diagram under the compressive stress state for detecting test piece among the present invention; as shown in Figure 5; have the first film 501 and second film 502 on the silicon substrate 500; the 3rd film 503 of protection usefulness of on second film 502, also having grown, and utilize the 3rd film 503 that epoxy resin 504 will this test piece to be detected to stick together with silicon chip 505 to form the detection test piece.This detection test piece is in the state of compressive stress, bends to the direction that deviates from silicon substrate 500.
Adhesion by the identical double-layer films in the detection test piece with above-mentioned different stress conditions detects discovery, when utilizing four-point bending method to carry out the adhesion test, is in the tension stress state if detect test piece, easily detects cracking between double-layer films; And be in compressive stress state if detect test piece, and then be difficult for detecting the cracking between double-layer films, detect and easily fail.Be success ratio and the accuracy of guaranteeing that adhesion detects, the present invention adjusts the stress state that detects test piece earlier before detecting adhesion, makes it all be in the tension stress state.
Consider that surface that the back adheres to does not have growing film and be not zero stress state with the silicon chip of figure, can think the test piece to be detected behind growth regulation three films stress state with adhere to silicon chip after the stress state of the detection test piece that forms identical, as long as thereby the actual test piece to be detected that is implemented in behind growth regulation three films of the present invention be in the tension stress state.
The present invention makes the 3rd film except can protecting the first film and second film by the process conditions of the 3rd film are adjusted, and also can adjust the stress that detects test piece integral body simultaneously, guarantees that whole detection test piece is maintained at the state of tension stress.
When formula (2) has been represented to have multilayer film in the detection test piece, the computing method of its total stress.Wherein, S is the total stress (average stress of the total film) of all films, and Hx is the thickness (X layer film thickness) of X layer film, and Sx is the stress (X layer film stress) that the X layer film has.Can see by this formula, though the first film and second film are logical as aimed thin film to be detected, normally simulate the formation condition of formal device, can not adjust it, but, can realize equally comprising the adjustment of three-layer thin-film in the total stress of interior test piece to be detected (or detecting test piece integral body) by adjusting stress or its thickness that the 3rd film is had.
The first embodiment of the present invention is the method that the adhesion between copper metal and the dielectric layer that is adjacent is detected, and the quality of the adhesion between this double-layer films is for the reliability of the device that utilizes it and material impact is arranged serviceable life.If the adhesion between copper metal and the dielectric layer that covers on it is bad, then particularly under the condition of mechanical load (as the cmp step etc.), the two easily produces lamination.And this lamination can cause the copper metal to the phenomenon that external diffusion, moisture or other pollutant inwardly spread, and makes semiconductor devices in the obvious variation of characteristic aspect reliability and life-span.
Fig. 6 is the process flow diagram of first embodiment of the detection method of interlayer adhesion force of the present invention, and Fig. 7 to Fig. 8 is the device profile map in the first embodiment of the invention, below in conjunction with Fig. 6 to Fig. 8 the first embodiment of the present invention is described in detail.
At first, provide test piece to be detected, and had the first film and second film (S601) in this test piece to be detected.Fig. 7 is the sectional view of test piece to be detected in the first embodiment of the invention, and as shown in Figure 7, the first film 701 on the silicon substrate 700 is the copper metal, and second film 702 is a dielectric layer, as silicon nitride of silicon nitride, silit or carbon dope etc.In addition, consider normally carrying out that adhesiveness between copper metal and silicon substrate should better just can guarantee to detect, in the present embodiment, also added one deck cushion 703 at the first film 701 and 700 of silicon substrates, this layer can form with silicon substrate 700 and adhere to closely, can adhere to better with copper metal 701 again.This cushion 703 can be formed by materials such as monox, titanium nitrides.
Then, determine the process conditions of the 3rd film to be grown according to the stress state of test piece to be detected:
A, determine the stress state (S602) of the test piece to be detected before growth regulation three films: detect test piece behind the 3rd film and can be in the tension stress state in order to ensure forming, will determine to detect before growth regulation three films stress state (not shown its stress state among Fig. 7) of test piece earlier.
In the present embodiment, suppose that silicon substrate itself is in unstress state, the cushion 703--monox on it (this monox is the monox that utilizes the PECVD method to form in the present embodiment) thickness is
Compressive stress with about 100MPa; The thickness of the first film 701--copper metal is assumed to be
Tension stress with about 300MPa; The second film 702--is assumed to be the silicon nitride of carbon containing, and thickness is
Compressive stress with about 260MPa.
The stress that whole test piece to be detected has that formula (2) above utilizing can calculate this moment is:
Can see that the test piece to be detected of this moment shows as tension stress.
B, determine the process conditions (S603) of follow-up the 3rd film that will grow: after obtaining the stress state of test piece to be detected, can adjust the process conditions of the 3rd film in view of the above, so that the test piece to be detected after forming the 3rd film can be in the tension stress state.
Though the test piece to be detected before growth regulation three films that obtain above is to be in tension stress, if but the 3rd film growth is the film with bigger compressive stress, then cause the integrated stress state of the detection test piece that forms later to become compressive stress probably, make the adhesion between the first film and second film is difficult to detect to obtain.As, common the 3rd film as the protective seam use can adopt by tetraethyl monox (TEOS, Tetraethylor Thosilicate) to be made for the monox that gas source forms, and still, such silicon oxide layer has bigger compressive stress, as 140MPa; Then working as its thickness is
The time, the stress state that comprises the test piece to be detected (or detect test piece integral body) of the 3rd film has become and has had bigger compressive stress:
At this moment, when utilizing the adhesion between the four-point bending method detection the first film and second film, be prone to the phenomenon that detects failure, testing result is also inaccurate.
For this reason, having used the less fluorinated silicon oxide (FSG) of compressive stress in the present embodiment instead is the 3rd film, and its compressive stress that has can be adjusted to about 40MPa, like this, even its thickness has reached
The stress state of whole detection test piece still can remain tension stress:
Like this, the stress state of the test piece to be detected behind growth regulation three films still can maintain the tension stress state, and the adhesion that carries out in the back just can obtain testing result comparatively accurately in detecting.
The process conditions that are used for adjusting the stress situation that the 3rd film (it adopts the method for chemistry or physical vapour deposition (PVD) to form usually) has in the present embodiment comprise the process time (its change can be adjusted the thickness of the 3rd film), the pressure of the kind of reacting gas and flow (its change can be adjusted stress intensity and the thickness that the 3rd film has), chamber etc.
When noticing the thickness of determining the 3rd film; except the tension stress state that will consider to detect test piece requires; also to consider its protection effect to lower film; and itself is to the influence of adhesion testing result: requirement can not too thin (to prevent to protect the effect deficiency); can not blocked up (to prevent to influence the detection effect of adhesion), usually can with its thickness limits 2000 to
Between, as
Deng.
In addition, in order to obtain adhesion testing result more accurately, can also carry out trickleer adjustment to the process conditions of the 3rd film, the stress that test piece to be detected behind formation the 3rd film is had further is limited in the littler scope, as in 0 to 50MPa the tension stress scope (among the present invention, unstress state is considered as having a kind of special circumstances of tension stress, being expressed as tension stress is 0), reduced further to have improved the accuracy of testing result because of detecting the error of the different interlayer adhesion force testing results that cause of test piece stress intensity.
After determining the process conditions of the 3rd film, growth regulation three films in test piece to be detected form and detect test piece, and the detection test piece of this moment can guarantee to be in tension stress state (S604).Fig. 8 is the detection test piece sectional view in the first embodiment of the invention, as shown in Figure 8, has formed the 3rd film 705 on second film 702 of test piece to be detected.
After forming the 3rd film 705, utilize the 3rd film 705 that epoxy resin 708 will this test piece to be detected and surface not to have growing film and do not stick together, be formed for testing the detection test piece (S605) of the interlayer adhesion force between the first film 701 and second film 702 with the silicon chip 709 of figure.Then, the surface do not have growing film and not with the silicon chip of figure on form fluting 710, this fluting can utilize scribing instrument (as laser scribing means etc.) to finish usually, by be provided with can make each formation be recessed at the degree of depth and basic identical in shape, to avoid causing the inconsistent of testing result because of the difference of fluting.
Then, utilize four-point bending method to detect adhesion (S606) between the first film and second film.Then, again by Fig. 2 with shown in Figure 3 adhesion between the first film and second film is tested.
Adopt the method in the first embodiment of the invention that the adhesion between the first film and second film is tested, can guarantee to detect test piece integral body and be in the tension stress state, the repeatability and the accuracy of interlayer adhesion force test result have been improved, for the judge of adhesion between double-layer films provides effective supplemental characteristic.
The first embodiment of the present invention has illustrated the method that the adhesion between metal level and dielectric layer is detected, wherein, better in order to ensure the adhesiveness between the first film and silicon substrate, can not have influence on the carrying out of detection, between the first film and silicon substrate, form cushion in the first embodiment of the invention.But, if adhesiveness own is just better between the first film and silicon substrate, then also can be without this cushion, and directly on silicon substrate, form the first film.The detection method of the adhesion of the two layer medium interlayer of introducing as second embodiment of the invention, its detection be adhesion between the silicon nitride (NDC) of dielectric layer BD (black diamond) and carbon containing.Just better because of the adhesion between BD and silicon substrate itself, this BD layer can be directly grown on the silicon substrate.
Fig. 9 is the sectional view of test piece to be detected in the second embodiment of the invention, as shown in Figure 9, because the adhesiveness between BD and silicon substrate is better, can directly on silicon substrate 900, form the first film 901 (BD), then, on the first film 901, form second film 902 (NDC) again.
Then, similar method among the employing and first embodiment, utilize formula (2) that the stress of test piece to be detected with the first film 901 and second film 902 is calculated, to be in the requirement of tension stress according to the stress situation of whole test piece to be detected behind formation the 3rd film, determine the 3rd film the stress situation that should have, and determine its process conditions according to this.
By determined process conditions growth regulation three films on second film, Figure 10 is the detection test piece sectional view in the second embodiment of the invention, as shown in figure 10, having formed the 3rd film 905, the three films 905 on second film 902 of test piece to be detected wants to make whole detection test piece remain on the tension stress state.
After forming the 3rd film 905, utilize epoxy resin 908 that the 3rd film 905 and surface are not had growing film and do not stick together, be formed for testing the detection test piece of the interlayer adhesion force between the first film 901 and second film 902 with the silicon chip 909 of figure.Then, the surface do not have growing film and not with the silicon chip of figure on form fluting 910.
Then, utilize four-point bending method to detect adhesion between the first film and second film: again by Fig. 2 with shown in Figure 3 adhesion between the first film and second film is tested, by the adhesion size that formula (1) release the first film 901 and 902 of second films have, judge whether it satisfies the requirement of element manufacturing.
In the above embodiment of the present invention, be that the adhesion between metal level and dielectric layer is detected, in other embodiments of the invention, can also be between semiconductor layer (as monocrystalline silicon layer, polysilicon layer, carbonization gallium layer, gallium arsenide layer etc.) and the metal level (as copper, aluminium, tungsten etc.), between metal level and the dielectric layer (as various monox, silicon nitride etc.), between semiconductor layer and the dielectric layer, dielectric layer detects the adhesiveness between various films such as between the dielectric layer.Therefore, the first film and second thin layer can be respectively any in metal level, dielectric layer or the semiconductor layer.
In the above embodiment of the present invention, what detect is adhesion between the double-layer films of growing on the silicon substrate, in other embodiments of the invention, can also directly detect the adhesion between silicon substrate and certain film, its concrete implementation step is all similar with present embodiment to thinking, under the enlightenment of the above embodiment of the present invention, the extension of this application is easy to understand and realization for those of ordinary skills, does not repeat them here.
In addition, in the above embodiment of the present invention, the double-layer films that detect adhesion all is to form on silicon substrate, in other embodiments of the invention, can also form in the detection test piece of other materials, detects test piece etc. as silicon carbide substrates, gallium arsenide.
It more than is detailed introduction to the interlayer adhesion force detection method, in addition, the present invention has also introduced the method for making that a kind of interlayer adhesion force detects test piece, and it comprises step: test piece to be detected is provided, and has the first film and second film in the described test piece to be detected; Determine the stress state of described test piece to be detected; The process conditions of definite the 3rd film that will grow; Growth regulation three films in described test piece to be detected make described detection test piece be in the tension stress state; The 3rd film in the described test piece to be detected and substrate (be generally the surface does not have growing film and not with the silicon chip of figure) are sticked together, form and detect test piece.
Wherein, the 3rd film is generally certain silicon oxide layer, as silicon oxide layer of siof layer, fluorine-containing phosphorus etc., its thickness can 2000 to
Between.
The process conditions of wherein determined the 3rd film comprise the kind and the flow of process time, reacting gas, mainly are to guarantee that the test piece to be detected behind growth regulation three films can be in the tension stress state.
The first film wherein and second thin layer can be respectively any in metal level, dielectric layer or the semiconductor layer.
Similarly, if adhesiveness is bad between silicon substrate and the first film, one deck cushion can also be formed, between it as certain silicon oxide layer.
In addition,, can carry out trickleer adjustment, will form the stress limitation of the test piece to be detected behind the 3rd film between 0 to 50MPa the process conditions of the 3rd film in order to obtain adhesion testing result more accurately.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (20)
1, a kind of detection method of interlayer adhesion force is characterized in that, comprises step:
Test piece to be detected is provided, and has the first film and second film in the described test piece to be detected;
Determine the stress state of described test piece to be detected;
The process conditions of definite the 3rd film that will grow;
Growth regulation three films in described test piece to be detected;
Form and detect test piece, and described detection test piece is in the tension stress state;
Utilize four-point bending method to detect adhesion between the described the first film and second film.
2, detection method as claimed in claim 1 is characterized in that: described the 3rd film comprises silicon oxide layer.
3, detection method as claimed in claim 1 is characterized in that: described the 3rd film comprises siof layer.
4, as claim 1,2 or 3 described detection methods, it is characterized in that: the thickness of described the 3rd film 2000 to
Between.
5, detection method as claimed in claim 1 is characterized in that: described process conditions comprise the kind and the flow of process time, reacting gas.
6, detection method as claimed in claim 1 is characterized in that: the described the first film and second film comprise any in metal level, dielectric layer or the semiconductor layer respectively.
7, detection method as claimed in claim 6 is characterized in that: described second film comprises the silicon nitride layer of carbon dope.
8, as claim 1 or 5 described detection methods, it is characterized in that: between the substrate of described test piece to be detected and the described the first film, also have one deck cushion.
9, detection method as claimed in claim 8 is characterized in that: described cushion comprises silicon oxide layer.
10, detection method as claimed in claim 1 is characterized in that: the size of described tension stress is between 0 to 50MPa.
11, a kind of detection specimen preparation method of interlayer adhesion force is characterized in that, comprises step:
Test piece to be detected is provided, and has the first film and second film in the described test piece to be detected;
Determine the stress state of described test piece to be detected;
The process conditions of definite the 3rd film that will grow;
Growth regulation three films in described test piece to be detected;
The 3rd film and substrate in the described test piece to be detected are sticked together, form and detect test piece, and described detection test piece is in the tension stress state.
12, method for making as claimed in claim 11 is characterized in that: described the 3rd film comprises silicon oxide layer.
13, method for making as claimed in claim 11 is characterized in that: described the 3rd film comprises siof layer.
14, as claim 11,12 or 13 described method for makings, it is characterized in that: the thickness of described the 3rd film 2000 to
Between.
15, method for making as claimed in claim 11 is characterized in that: described process conditions comprise the kind and the flow of process time, reacting gas.
16, method for making as claimed in claim 11 is characterized in that: the described the first film and second film comprise any in metal level, dielectric layer or the semiconductor layer respectively.
17, method for making as claimed in claim 16 is characterized in that: described second film comprises the silicon nitride layer of carbon dope.
18, as claim 11 or 15 described method for makings, it is characterized in that: between the substrate of described test piece to be detected and the described the first film, also have one deck cushion.
19, method for making as claimed in claim 18 is characterized in that: described cushion comprises silicon oxide layer.
20, method for making as claimed in claim 11 is characterized in that: the size of described tension stress is between 0 to 50MPa.
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| CN2007100443442A CN101354335B (en) | 2007-07-27 | 2007-07-27 | Method for detecting interlayer adhesion force and preparation method of detecting test piece |
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| CN2007100443442A CN101354335B (en) | 2007-07-27 | 2007-07-27 | Method for detecting interlayer adhesion force and preparation method of detecting test piece |
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| CN101354335B CN101354335B (en) | 2011-07-13 |
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| CN102395871A (en) * | 2009-04-14 | 2012-03-28 | 耶尼私人有限公司 | Adhesive element for adhesion tests and corresponding testing process |
| CN103185687A (en) * | 2011-12-27 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting interlayer adhesion force and method for manufacturing detection test piece |
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