CN101350361B

CN101350361B - Electro-luminescence device and electronic apparatus

Info

Publication number: CN101350361B
Application number: CN2008102148544A
Authority: CN
Inventors: 小林英和
Original assignee: Seiko Epson Corp
Current assignee: Seiko Epson Corp
Priority date: 2004-11-22
Filing date: 2005-11-22
Publication date: 2011-06-15
Anticipated expiration: 2025-11-22
Also published as: CN100488331C; CN101350361A; CN1780511A

Abstract

The invention provide an EL device including an R pixel, a G pixel and a B pixel. Each pixel has at least a pair of electrodes of which one a light transmitting electrode and a light-emitting layer. The insulator laminated film is formed on the surface of the light transmitting electrode opposite to the light-emitting layer and has a plurality of low refractive-index layers each formed of a light transmitting insulator and a plurality of high refractive-index layers each formed of a light transmitting insulator, which are alternately laminated. Each low refractive-index layer is formed over the entire luminescent region of the R pixel, the G pixel, and the B pixel and has a constant thickness even in any one of regions which overlap the R pixel, the G pixel, and the B pixel. Each high refractive-index layer is formed over the entire luminescent region of the R pixel, the G pixel, and the B pixel and has a constant thickness even in any one of regions which overlap the R pixel, the G pixel, and the B pixel. The plurality of the low refractive-index layers has different thicknesses, and the plurality of the high refractive-index layers has different thicknesses. The EL device is capable of enhancing color purity of output light, and is simple in structure, easy to manufacture.

Description

EL device and e-machine

The application is that application number is 200510124893.1 (the applying date: the dividing an application of application of the same name on November 22nd, 2005).

Technical field

The present invention relates to EL device and e-machine.

Background technology

The EL device of (below the be called EL) element that in recent years, in e-machines such as notebook computer, mobile phone, electronic notebook,, proposes to have a plurality of electroluminescents as the parts of display message.In EL element, between relative pair of electrodes, dispose EL layer (luminescent layer).

In the field of EL device, generally use alternately laminated multilayer film with layer of different refractivity, make the photoresonance of specific wavelength.For example in patent documentation 1, propose to have the semitransparent reflecting film that by medium constitute of the glass substrate of being formed on comprehensively, form thereon by SiO ₂The spacing block that constitutes, formation transparent anode, formation hole injection layer thereon, the EL device that forms luminescent layer thereon and form negative electrode thereon thereon.This luminescent layer is all formed by common material in which pixel, emit white light, but in order to make output color difference as purpose, the optical distance of transparent anode and hole injection layer and luminescent layer and or SiO ₂The thickness of spacing block according to as the output color of purpose and difference.Therefore, even form luminescent layer, also can obtain the output color of R (redness), G (green), B (blueness) by identical white luminescent material.

In addition, in patent documentation 2, propose to have the luminescent layer that forms by different materials respectively about R, G, B pixel, with the overlapping translucent reflector group's of whole luminescent layers EL device.Translucent reflector group is identical construction for whole luminescent layers, but with the colorimetric purity that improves the output color is purpose, have the resonance that is suitable for R light semi-reflective layer, be suitable for the resonance of G light semi-reflective layer, be suitable for the semi-reflective layer of the resonance of B light.These semi-reflective layers have a plurality of low-index layers (SiO for example respectively ₂Layer) a plurality of high refractive index layers (TiO for example ₂Layer), these low-index layers and high refractive index layer alternating layer fall.In each semi-reflective layer, the refractive index n 2 of the refractive index n 1 of high refractive index layer, its thickness d 1, low-index layer, its thickness d 2 are set at and satisfy expression formula 1.

n1·d1＝n2·d2＝(1/4+m/2)·λ……(1)

Here, λ should reflect, the light wavelength of resonance, and m is the arbitrary integer more than 0.Therefore, in each semi-reflective layer, low-index layer has mutually the same thickness d 2, and high refractive index layer has mutually the same thickness d 1.

No. 2797883 communique of [patent documentation 1] Japan Patent

[patent documentation 2] special table 2003-528421 communique

, in the EL of patent documentation 1 device, promptly enable, also be difficult to improve the colorimetric purity of the light of output from the different color of white luminous output.In addition, for whole wavelength region may of R, G, B, the white luminescent material of luminous intensity with certain degree is restricted.

In addition, in the EL of patent documentation 2 device, in fact for example the emitting red light of R pixel is by a large amount of reflections of the layer of the light that is suitable for G or B.Therefore, whichever color luminous decaying significantly by translucent reflector group time can't obtain required resonance effect.In addition, the light that is sent by luminescent layer saw through various routes in each boundary reflection or transmission before output, so not talkative thickness according to expression formula 1 decision low-index layer and high refractive index layer is closely related with significant resonance effect.Translucent reflector group have the resonance that is suitable for R light semi-reflective layer, be suitable for the resonance of G light semi-reflective layer, be suitable for the semi-reflective layer of the resonance of B light, so the quantity of layer is inevitable many, be difficult to make.

Summary of the invention

Therefore, the invention provides the colorimetric purity of the light that can improve output, and EL device simple in structure, easy to manufacture.

A form of EL device of the present invention is a kind of EL device, have and to send R pixel, the G pixel that can send the light that is equivalent to green that is equivalent to red light, the B pixel that can send the light that is equivalent to blueness, it is characterized in that: described each pixel has pair of electrodes at least, be clipped between these electrodes and by being provided electric energy luminous luminescent layer, the side in the described electrode is an optically transparent electrode; In described optically transparent electrode, form the stacked film of insulator on the face of an opposite side with described luminescent layer; The stacked film of described insulator has a plurality of low-index layers of being formed by the light transmission insulator, by a plurality of high refractive index layers that the light transmission insulator with refractive index also higher than described low-index layer forms, these low-index layers and high refractive index layer are alternately laminated; The light-emitting zone whole district that each low-index layer is striden described R pixel, described G pixel and described B pixel forms, with described R pixel, described G pixel and described B pixel in any one overlapping areas in have the same thickness; The light-emitting zone whole district that described high refractive index layer is striden described R pixel, described G pixel and described B pixel forms, with described R pixel, described G pixel and described B pixel in any one overlapping areas in have the same thickness; A plurality of described low-index layers have the thickness that differs from one another; A plurality of described high refractive index layers have the thickness that differs from one another; Determine the thickness of described low-index layer and described high refractive index layer, if thereby described luminescent layer is luminous, then at least owing to reflection at interface between described optically transparent electrode and the stacked film of described insulator and the interface between described low-index layer and the described high refractive index layer, any one peak luminous wavelength in described R pixel, described G pixel and described B pixel sends the also high light of intensity when not having the stacked film of described insulator from the stacked film of described insulator.

In the EL of this form device, the stacked film of insulator that disposes alternately laminated a plurality of low-index layer and a plurality of high refractive index layers in the opposite side with luminescent layer of optically transparent electrode.Thickness by suitable decision low-index layer and high refractive index layer, if luminescent layer is luminous, at least because the interface between optically transparent electrode and the stacked film of insulator and the reflection at the interface between low-index layer and the high refractive index layer, any one peak luminous wavelength in R pixel, G pixel, B pixel sends the also high light of intensity when not having the stacked film of insulator from the stacked film of insulator." peak luminous wavelength " is the highest wavelength of intensity the light wavelength sent of the luminescent layer from pixel.In the present invention, no matter at the peak luminous wavelength of R pixel, or the peak luminous wavelength of G pixel, or the peak luminous wavelength of B pixel, all because the stacked film of insulator sends high-intensity light.Therefore, can improve the colorimetric purity of the light of output.A plurality of low-index layers have the thickness that differs from one another, but each low-index layer with any one overlapping areas of R pixel, G pixel, B pixel in have the same thickness, a plurality of high refractive index layers have the thickness that differs from one another, but each high refractive index layer with any one overlapping areas of R pixel, G pixel, B pixel in have the same thickness, so need not make varied in thickness according to pixel.Promptly has public structure with the overlapping stacked film of insulator of R pixel, G pixel, B pixel.In addition, need not design respectively the resonance that is suitable for R light layer, be suitable for the resonance of G light layer, be suitable for the layer of the resonance of B light.

Other forms of EL device of the present invention are a kind of EL devices, have and to send R pixel, the G pixel that can send the light that is equivalent to green that is equivalent to red light, the B pixel that can send the light that is equivalent to blueness, it is characterized in that: described each pixel has pair of electrodes at least, be clipped between these electrodes and by being provided electric energy luminous luminescent layer, the side in the described electrode is an optically transparent electrode; In described optically transparent electrode, form the stacked film of insulator on the face of an opposite side with described luminescent layer; The high refractive index layer that the stacked film of described insulator has the low-index layer that formed by the light transmission insulator, formed by the light transmission insulator with refractive index also higher than described low-index layer; The light-emitting zone whole district that described low-index layer is striden described R pixel, described G pixel and described B pixel forms, with described R pixel, described G pixel and described B pixel in any one overlapping areas in have the same thickness; The light-emitting zone whole district that described high refractive index layer is striden described R pixel, described G pixel and described B pixel forms, with described R pixel, described G pixel and described B pixel in any one overlapping areas in have the same thickness; Determine the thickness of described low-index layer and described high refractive index layer, thereby when light from the stacked film of described insulator during to described optically transparent electrode and described luminescent layer incident, at least because in the reflection at interface between described optically transparent electrode and the stacked film of described insulator and the interface between described low-index layer and the described high refractive index layer, described R pixel, described G pixel and described B pixel each peak luminous wavelength ± luminance factor of wavelength in the 20nm respectively each peak luminous wavelength ± reflectivity of other wavelength in the 50nm is also low.

In the EL of this form device, has the stacked film of insulator of low-index layer and high refractive index layer in the opposite side configuration with luminescent layer of optically transparent electrode.Thickness by suitable decision low-index layer and high refractive index layer, when light during from the stacked film incident of luminescent layer one side direction optically transparent electrode and insulator, at least because the interface between optically transparent electrode and the stacked film of insulator and the reflection at the interface between low-index layer and the high refractive index layer, each peak luminous wavelength ± luminance factor of wavelength in the 20nm each peak luminous wavelength ± reflectivity of other wavelength in the 50nm is also low.For example, the peak luminous wavelength of R pixel ± 50nm in, the peak luminous wavelength of R pixel ± reflectivity of a wavelength in the 20nm becomes minimum.In view of the above, can improve the colorimetric purity of the light of output.In this manual, " ± 20nm in " comprise peak luminous wavelength+wavelength of 20nm and-wavelength of 20nm, " in ± 50nm " comprise peak luminous wavelength+wavelength of 50nm and-wavelength of 50nm.Low-index layer with R pixel, G pixel, B pixel in any one overlapping areas in have the same thickness, high refractive index layer with R pixel, G pixel, B pixel in any one overlapping areas in have the same thickness, so need not make varied in thickness according to pixel.Promptly has public structure with the overlapping stacked film of insulator of R pixel, G pixel, B pixel.In addition, need not design respectively the resonance that is suitable for R light layer, be suitable for the resonance of G light layer, be suitable for the layer of the resonance of B light.Therefore, this EL device simple in structure made easily.

Described optically transparent electrode is different according to the glow color of described pixel with the combination of the layer thickness from described optically transparent electrode to described luminescent layer that comprises described luminescent layer.In view of the above, even the insulator stacked film overlapping with R pixel, G pixel, B pixel has public structure, the combination of the layer thickness from optically transparent electrode to described luminescent layer is according to the glow color of pixel and difference, so can obtain easily and the corresponding suitable reflection characteristic of each glow color.

In addition, EL device of the present invention is an organic El device, between described luminescent layer and described optically transparent electrode configuration reduce hole or electrode from described luminescent layer to intermediate layer that described optically transparent electrode spills.In view of the above, compare the luminous position difference of the thickness direction in the luminescent layer when not having the intermediate layer.For example there is not such intermediate layer (hole blocking layer and the electronic barrier layer) time between luminescent layer and the electrode to compare with two sides at luminescent layer, when between luminescent layer and optically transparent electrode, the intermediate layer being set, luminous position in the luminescent layer is to the intermediate layer and then to optically transparent electrode one side's displacement, according to the material and/or the thickness in intermediate layer, luminous at the interface in luminescent layer and intermediate layer sometimes.Therefore,, select its material and/or thickness, can adjust the luminous position of the thickness direction in the luminescent layer, and then adjust the light optical distance that stacked film advances from the luminous position to the insulator by the intermediate layer is set.

The stacked film of described insulator has a plurality of low-index layers and a plurality of high refractive index layer, and these low-index layers and high refractive index layer are alternately laminated; A plurality of described low-index layers have the thickness that differs from one another; A plurality of described high refractive index layers have the thickness that differs from one another.

In the past, make in the structure of photoresonance with the stacked film of the insulator of alternately laminated a plurality of low-index layers and a plurality of high refractive index layers, generally according to described expression formula 1, low-index layer has mutually the same thickness, high refractive index layer has mutually the same thickness, but having been found that, inventor of the present invention in such structure, might not obtain significant resonance effect.A plurality of low-index layers have the thickness that differs from one another, and when a plurality of high refractive index layers had the thickness that differs from one another, the light arbitrarily of R, G, B all resonated, can be luminous with high-energy.

In addition, the light at the stacked film of described insulator penetrates side configuration colour filter.By colour filter is set like this, can improve contrast and colorimetric purity.

E-machine of the present invention is characterised in that: have EL device of the present invention as display part.According to such e-machine, can realize the high demonstration of colorimetric purity of the light of output.

Description of drawings

Fig. 1 is the figure of arrangement of the organic El device of expression colour filter light emitting-type of the present invention.

Fig. 2 is the cutaway view of the organic El device of Fig. 1.

Fig. 3 is the table of characteristic of each layer of expression organic El device of the present invention.

The ideograph of the example of the advance route of Fig. 4 light that to be expression sent by the pixel of organic El device of the present invention.

Fig. 5 is expression from the curve chart of the frequency spectrum of the light that sends with each pixel overlapping areas of organic El device of the present invention.

Fig. 6 is expression from the curve chart of the frequency spectrum of the light that sends with each pixel overlapping areas of the organic El device of comparative example.

Fig. 7 (a) is the cutaway view of a step of the manufacturing of expression organic El device of the present invention, (b) is the cutaway view of expression (a) step afterwards, (c) is the cutaway view of expression (a) step afterwards.

The cutaway view of Fig. 8 (a) presentation graphs 7 (c) step afterwards (b) is the cutaway view of expression (a) step afterwards, (c) is the cutaway view of expression (a) step afterwards.

Fig. 9 is the ideograph of example of route of the light that causes of vertical incidence light of expression organic El device of the present invention.

Figure 10 be expression about with organic El device of the present invention in R pixel overlapping areas for from the outside to the figure of the reflection of light rate frequency spectrum of organic El device vertical incidence.

Figure 11 be expression about with organic El device of the present invention in G pixel overlapping areas for from the outside to the figure of the reflection of light rate frequency spectrum of organic El device vertical incidence.

Figure 12 be expression about with organic El device of the present invention in B pixel overlapping areas for from the outside to the figure of the reflection of light rate frequency spectrum of organic El device vertical incidence.

Figure 13 is the table of each layer characteristic of expression other organic El devices of the present invention.

Figure 14 is the table of each layer characteristic of expression other organic El devices of the present invention.

Figure 15 is the table of each layer characteristic of expression other organic El devices of the present invention.

Figure 16 is the cutaway view of embodiment 3 of the organic El device of colour light-emitting type of the present invention.

Figure 17 is the cutaway view of a part of inorganic EL device of the colour light-emitting type of expression embodiments of the invention 4.

Figure 18 (a) is the figure of expression e-machine of the present invention, (b) is the figure of expression other e-machines of the present invention, (c) is the figure of expression e-machine of the present invention.

Among the figure: 4-pixel capacitors (anode, optically transparent electrode); 7-luminescent layer; 9-opposite electrode (negative electrode); 16a, 16b, 16c-second interlayer insulating film (high refractive index layer); 17a, 17b, 17c-second interlayer insulating film (low-index layer); The stacked film of 18-insulator; 100-organic El device (EL device); 202-optically transparent electrode; 204-luminescent layer; 206-backplate; The stacked film of 207-insulator; 208-low-index layer; 209-high refractive index layer.

Embodiment

Below, with reference to description of drawings various embodiment of the present invention.In these accompanying drawings, the ratio of the size of each layer or each member is suitably different with actual conditions.

＜embodiment 1 〉

The organic El device of the colour light-emitting type of the embodiment of the invention 1 is described.Fig. 1 is the figure of the Wiring structure of expression organic El device 100, and Fig. 2 is the cutaway view of organic El device 100.

As shown in Figure 1, organic El device 100 have multi-strip scanning line 101, many signal line 102 of extending in the direction of intersecting, many power lines 103 that extend side by side with holding wire 102 for scan line 101.Near each crosspoint of scan line 101 and holding wire 102, pixel region forms rectangular.

On holding wire 102, connect and have data one side drive circuit 104 of shift register, level shifter, video line and analog switch.In addition, connection has scanning one side drive circuit 105 of shift register, level shifter on scan line 101.

In each pixel region A, be provided with by 101 pairs of grids of scan line and supply with the first film transistor 122 of sweep signal, maintenance offers grid from the capacitor cap of the pixel signal of holding wire 102 supplies, the pixel signal that is kept by capacitor cap by this first film transistor 122 second thin-film transistor 2.The pixel capacitors 4 that drive current flows into from described power line 103 when in addition, being provided with by 103 energisings of 2 pairs of power lines of second thin-film transistor, be configured in the luminescent layer 7 between this pixel capacitors 4 and the opposite electrode (negative electrode) 9 in pixel region A.Constitute organic EL by pixel capacitors 4, opposite electrode 9 and luminescent layer 7.

According to such structure, if driven sweep line 101,122 conductings of the first film transistor, then the current potential of holding wire 102 is at this moment kept by capacitor cap, according to the state of described capacitor cap, determines the conducting and the off-state of second thin-film transistor 2.And electric current flows to pixel capacitors 4 by the raceway groove of second thin-film transistor 2 from power line 103, and electric current flows to opposite electrode 9 by luminescent layer 7 again.Luminescent layer 7 is luminous according to the magnitude of current that flows through it.

As shown in Figure 2, organic El device 100 has the transparent substrates 1 that formed by translucent materials such as glass, is configured to rectangular a plurality of organic EL 7a on this transparent substrates 1.Particularly, organic EL 7a has the thin-film transistor (TFT) 2 on transparent substrates of being layered in 1, transparent pixel capacitors (transparent anode) 4, luminescent layer 7, opposite electrode (negative electrode) 9.

As transparent substrates 1,, can also use disclosed various substrates such as silicon substrate, ceramic substrate, metal substrate, plastic, plastic film substrate except glass substrate.Upper surface at the figure of transparent substrates 1 is arranged as a plurality of pixel region A as the luminous zone rectangular.Particularly, show, arrange and red (R), green (G), blue corresponding pixel regions of all kinds such as (B) in order to carry out colour.Configuration pixel capacitors 4, configuration signal line, power line, scan line in its vicinity in each pixel region A.In this manual, the pixel region A of energy rubescent look (R) light is called the R pixel, the pixel region A of energy green-emitting (G) light is called the G pixel, the pixel region A of look (B) light that can turn blue is called the B pixel.

In addition, at a plurality of thin-film transistors 2 that form on the transparent substrates 1 on the pixel capacitors (transparent anode) 4 that is connected electrically in pixel region A respectively.But thin-film transistor 2 has at the semiconductor layer 13 that is configured to island on the transparent substrates 1, with the overlapping grid 12 that separates from semiconductor layer 13 in the drain region of semiconductor layer 13 respectively, be connected grid 12 on the grid region of an end of semiconductor layer 13, be connected the source electrode 11 on the source region of the other end of semiconductor layer 13.Semiconductor layer 13 is formed by polysilicon film, and

electrode

10,11,12 is for example formed by aluminium.As described in disclosed technology, by gate insulation layer 30, first interlayer insulating film 31, second interlayer insulating film 16a～16c, 17a～17c, the height that semiconductor layer 13,

electrode

10,11,12 are configured to differ from one another are set.Particularly, semiconductor layer 13 is covered by gate insulation layer 30, the grid 12 that is configured on the gate insulation layer 30 is covered by first interlayer insulating film 31, and the source electrode 11 that is configured on first interlayer insulating film 31 is covered by the second interlayer insulating film 16a, and drain electrode 10 is configured on the second interlayer insulating film 17c.

Though it is not shown, but as described in disclosed technology, configuration is connected the grid line on the grid 12 between

insulating barrier

30,31, disposing the source line that is connected on the source electrode 11 between insulating barrier 31, the 16a, configuration various lines shown in Figure 1 between the random layer of

insulating barrier

30,31,16a～16c, 17a～17c.On insulating

barrier

30,31, be formed for being electrically connected the contact hole 23 in the source region of source electrode 11 and semiconductor layer 13.On insulating

barrier

30,31,16a～16c, 17a～17c, be formed for connecting the contact hole 24 in the drain region of drain electrode 10 and semiconductor layer 13.

The stacked film 18 of insulator has a plurality of low-index layers of being formed by the light transmission insulator, by the high refractive index layer that the light transmission insulator with refractive index also higher than low-index layer forms, these low-index layers and high refractive index layer alternating layer fall.Second interlayer insulating film 16a～16c is a high refractive index layer, for example by SiN _xOr TiO ₂Form.Second interlayer insulating film 17a～17c is a low-index layer, for example by SiO ₂Form.Second interlayer insulating film 16a～16c, 17a～17c stride transparent substrates 1 upper surface and all form with the same thickness, therefore, the luminous zone Zone Full of striding R pixel, G pixel, B pixel extends, with any one overlapping areas of R pixel, G pixel, B pixel in have the same thickness.As described later, a plurality of second interlayer insulating film 16a～16c have the thickness that differs from one another, and a plurality of second interlayer insulating film 17a～17c have the thickness that differs from one another.

The gate insulation layer 30 and first interlayer insulating film 31 are for example by SiO ₂Form.The gate insulation layer 30 and first interlayer insulating film 31 are respectively the key elements of the characteristic of decision TFT2, have the same thickness.

The pixel capacitors 4 of each pixel region A is formed on the second interlayer insulating film 17c of the superiors of the stacked film 18 of insulator, is electrically connected with the drain electrode 10 of corresponding TFT2.Pixel capacitors 4 is for example formed by ITO light transmission electric conducting materials such as (indium tin oxides).On pixel capacitors 4, form hole injection/transfer layer 28, on hole injection/transfer layer 28, form intermediate layer 29, on intermediate layer 29, form luminescent layer 7.All forming electron injecting layer 8 on the luminescent layer 7, form opposite electrode 9 thereon.Be that electron injecting layer 8 and opposite electrode 9 are public in whole pixels, the luminous zone Zone Full of striding R pixel, G pixel, B pixel extends.Like this, pixel capacitors 4 is relative with opposite electrode 9 across luminescent layer 7, constitutes organic EL (light-emitting component) 7a with luminescent layer 7 and opposite electrode 9.

Hole injection/transfer layer 28, intermediate layer 29 and luminescent layer 7 are formed in the recess of being divided by cofferdam 51,52.First cofferdam 51 is by SiO ₂Constitute etc. inorganic material, second cofferdam 52 is by organic material or SiO such as acrylic acid quality or polyimides ₂Constitute etc. inorganic material.First cofferdam 51 is second interlayer insulating film 17c, and the local outer rim that covers pixel capacitors 4 has the peristome that is used to dispose luminescent layer 7 in inside.Second cofferdam 52 is configured on first cofferdam 51, has the peristome also bigger than the peristome of first cofferdam 51.

Hole injection/transfer layer 28 is configured in each pixel region A, but about whole pixels, by identical materials for example 3, the mixture of 4-polyethylene oxygen thiophene (PEDOT) and styrene sulfonic acid (PSS) (below be called " PEDOT/PSS ") forms.Intermediate layer 29 also is configured among each pixel region A, but about whole pixels, is formed by identical materials.This intermediate layer 29 is to reduce the electronic barrier layer that the electronics from negative electrode spills to pixel capacitors (anode) 4 from luminescent layer 7, for example (poly (2 by the good triphenylamine base polymer of hole injection or TFB, 7-(9,9-di-n-octylfluorene)-(1,4-phenylene-(4-secbutyphenyl) imino)-1,4-phenylene)) form.

In luminescent layer 7, exist by flowing through the electric current between the electrode 4,9, the green light emitting layer 7G of the red light emitting layer 7R of rubescent look (R) light, green-emitting (G) light, the blue light-emitting layer 7B of the look that turns blue (B) light.Luminescent layer 7 is by forming by different organic EL Material of all kinds.

As mentioned above, electron injecting layer 8 and opposite electrode 9 are that whole pixels are public.Electron injecting layer 8 is for example formed by LiF, with any one overlapping areas of R pixel, G pixel, B pixel in have the same thickness.Opposite electrode (negative electrode) though 9 detailed icons not constitute by calcium layer and aluminium lamination.Side near electron injecting layer 8 is second opposed electrode layer as thin as a wafer of calcium system, is aluminums away from a side of electron injecting layer 8, is the first thicker opposed electrode layer.First opposed electrode layer and second opposed electrode layer respectively with any one overlapping areas of R pixel, G pixel, B pixel in have the same thickness.

The structure of each light-emitting component of present embodiment as mentioned above, but, also can be the type that the type that does not have electron injecting layer 8, the type that the electronics input layer is set between electron injecting layer 8 and luminescent layer 7 etc. have other layers as the distortion of the light-emitting component that can utilize among the present invention.For example when using the luminescent layer 7 of low branch subclass, general using has the type of negative electrode, electronics input layer, luminescent layer, hole transporting layer, hole injection layer and anode, luminescent layer 7 about the high score subclass, usually utilize to have the type of anode, luminescent layer, hole injection layer and anode, can in these types, utilize the present invention.

In addition, in the present embodiment, anode is transparent, negative electrode is a reflectivity, emit to the outside by the stacked film of pixel capacitors 4 and insulator 18 from the light of luminescent layer 7, but can be reflectivity at anode also, negative electrode be transparent, at the stacked film 18 of transparent cathode one side configuration insulator, in the type that the outside emits, utilize the present invention by transparent cathode and the stacked film of insulator from the light of luminescent layer 7.In addition, the organic El device 100 of present embodiment is the end emission type of emitting to the outside by substrate 1 from the light of luminescent layer 7.Also can in the top emission type that opposite with substrate one is sidelong out, utilize the present invention at light from luminescent layer 7.

As mentioned above, intermediate layer 29 is electronic barrier layers.Compare when not having intermediate layer 29, if intermediate layer 29 is arranged, the thickness direction in luminescent layer then, to intermediate layer 29 and then to pixel capacitors 4 (transparent anode) side's displacement, according to by the material in intermediate layer 29 and/or the electronics barrier properties of thickness decision, luminous at the interface in luminescent layer 7 and intermediate layer 29 sometimes.In the present embodiment, between luminescent layer 7 and transparent anode 4 configuration as the intermediate layer 29 of electronic barrier layer, but be reflectivity at anode, negative electrode is that configuration is as the intermediate layer of hole blocking layer between luminescent layer and transparent cathode in the transparent type.Hole blocking layer is to reduce the layer that the hole from anode spills to opposite electrode (negative electrode) 9 from luminescent layer 7.If hole blocking layer is arranged, then the thickness direction in luminescent layer is to hole blocking layer and then to negative electrode one side's displacement, according to by the material of hole blocking layer and/or the hole barrier performance of thickness decision, luminous at the interface of luminescent layer and hole blocking layer sometimes.If the both sides at luminescent layer 7 are provided with the intermediate layer, when hole blocking layer and electronic barrier layer both sides promptly were set, the luminous position of the thickness direction in the luminescent layer was near the big side of barrier properties in hole blocking layer and the electronic barrier layer.Therefore, a side intermediate layer is set at least,, can adjusts the luminous position of the thickness direction in the luminescent layer, and then can adjust light advances to the stacked film of insulator from luminous position optical distance by selecting material and/or thickness.

Fig. 3 is the table of each layer characteristic of the organic El device 100 of expression present embodiment.In Fig. 3, why use same material and according to the color of overlapping pixel, the refractive index difference is because have the wavelength interdependence in the refractive index.Refractive index shown in Figure 3 is sent the light of 620nm with the R pixel, and the G pixel sends the light of 540nm, and the light that the B pixel sends 470nm is prerequisite.The optical distance of each of Fig. 3 layer is the long-pending of the thickness of layer and refractive index.As shown in Figure 3, second interlayer insulating film 16a～16c, the 17a～17c in the stacked film of insulator 18 respectively with any one overlapping areas of R pixel, G pixel, B pixel in have the same thickness.In addition, a plurality of second interlayer insulating film 16a～16c have the thickness that differs from one another, and a plurality of second interlayer insulating film 17a～17c have the thickness that differs from one another.

The stacked film 18 of insulator is identical structure about whole pixels, is identical thickness, and from pixel capacitors 4 to luminescent layer the combination of 7 layer (comprising pixel capacitors 4 and luminescent layer 7) according to the glow color of pixel and different.With R pixel overlapping areas in, the thickness of pixel capacitors 4 is 95nm, but with G pixel, B pixel overlapping areas in, the thickness of pixel capacitors 4 is 50nm.With R pixel, G pixel overlapping areas in, the thickness of hole injection/transfer layer 28 is 70nm, but with B pixel overlapping areas in, the thickness of hole injection/transfer layer 28 is 30nm.The thickness of luminescent layer 7 is according to the glow color of pixel and difference.

The ideograph of the example of the advance route of Fig. 4 light that to be expression sent by the pixel of the organic El device 100 of present embodiment.In Fig. 4, the interface between the solid line presentation layer, the advance route of single-point line expression light.The advance route of illustrated light is the example of representative, though also there is the advance route of a plurality of light in addition, simple and clear in order to make figure, omit.In addition, the angle of the single-point of figure line is not correctly represented the angle of advancing of light, describes to distinguishing a plurality of advance routes easily.

Fig. 4 is luminous with the interface BO between luminescent layer 7 and intermediate layer 29 to be prerequisite.From luminous position to omnibearing luminous, but interface between reflexive opposite electrode 9 and electron injecting layer 8, the whole light that absorbed by opposite electrode 9 are not to the right-hand reflection of figure.In addition, reflection and refraction take place in the interface of light between 2 layers that see through.A part that is light is at boundary reflection, and another part refraction is advanced.It should be noted that, (for example the second interlayer insulating film 16a～16c) is to low material (the second interlayer insulating film 17a～when 17c) advancing for example from the high material of refractive index when light, if incidence angle surpasses certain angle (critical angle), whole phenomenons that reflect are total reflection at this interface with regard to light takes place, but when low material advanced, incidence angle was during less than critical angle (during near normal incident) from the high material of refractive index for light, and light is an antireflection part at the interface, remaining refraction is advanced.

According to above structure, if luminescent layer 7 is luminous, then because the interface between intermediate layer 29 and the hole injection/transfer layer 28, interface between hole injection/transfer layer 28 and the pixel capacitors 4, interface between the stacked film 19 of pixel capacitors 4 and insulator, the reflection at the interface between second interlayer insulating film 17a～17c of low-refraction and the second interlayer insulating film 16a～16c of high index of refraction, generation resonance effect, at the R pixel, the G pixel, any peak luminous wavelength of B pixel, the light that intensity is high when not having the stacked film of insulator from the stacked film 18 of insulator laterally (for the stacked film 18 of insulator, an opposite side of luminescent layer 7 is transparent substrates 1 one sides) emit." peak luminous wavelength " is the highest wavelength of intensity from the light wavelength that the luminescent layer 7 of pixel is emitted.In the present invention, no matter at the peak luminous wavelength (620nm) of R pixel, or the peak luminous wavelength of G pixel (540nm), or the peak luminous wavelength of B pixel (470nm), emit high-intensity light by the stacked film 18 of insulator.Therefore, can improve the colorimetric purity of the light of output.

In other words, in the present embodiment, decision high refractive index layer (the second interlayer insulating film 16a～16c) and the low-index layer (thickness of the second interlayer insulating film 17a～17c), if thereby luminescent layer 7 is luminous, then because the reflection at described interface, at any peak luminous wavelength of R pixel, G pixel, B pixel, the high light of intensity is not emitted laterally from the stacked film 18 of insulator when having the stacked film of insulator.

The prerequisite of deciding step of thickness of each layer of following explanation at first, is described.Reflectivity R, the transmissivity T at the interface of two layers of vertical incidence, the phase change φ r of reflection and the phase change φ t that sees through are obtained by following expression formula (2)～(5)., n ₁Be the refractive index of the medium of incident one side, n ₂Be the refractive index of the medium of outgoing one side, k ₂Be the extinction coefficient of the medium of outgoing one side, refractive index and extinction coefficient exist with ... light wavelength.

R＝{(n ₁—n ₂) ²+k ₂ ²}/{(n ₁+n ₂) ²+k ₂ ²} ……(2)

T＝4n ₁n ₂/{(n ₁+n ₂) ²+k ₂ ²} ……(3)

Φr＝tan ^-1{2n ₁k ₂/(n ₁ ²—n ₂ ²—k ₂ ²)} ……(4)

Φt＝tan ^-1{k ₂/(n ₁+n ₂)} ……(5)

Use the thickness of expression formula (2)～(5) and each layer, obtain vertical incidence the catoptrical intensity (amplitude) at each interface and phase place, see through light intensity (amplitude) and phase place, infer the intensity (or amplitude) of the light (output light) of the total of emitting laterally from the stacked film 18 of insulator.And, Yi Bian change the thickness of each layer,, obtain the optimum thickness of each layer Yi Bian repeat to infer the intensity (or amplitude) under the peak luminous wavelength of light of the total of emitting laterally from the stacked film 18 of insulator.When the supposition of intensity, the photosyntometer of 3 secondary reflections from luminous to maximum.Than 3 times more the light of multiple reflection because the absorption of light in the layer, decay significantly.

As condition, in the thickness range of reality, make the varied in thickness of pixel capacitors 4, hole injection/transfer layer 28 and luminescent layer 7.Particularly, suppose that the material to pixel capacitors 4 uses ITO, the scope of thickness is limited to 40nm～100nm.The material of supposing hole injection/transfer layer 28 uses PEDOT/PSS, and the scope of thickness is limited to 20nm～100nm.The thickness range of luminescent layer 7 is limited to 60nm～100nm.In addition, luminous with the interface BO between luminescent layer 7 and intermediate layer 29 is prerequisite (with reference to Fig. 4).

Use software, infer the intensity under the peak luminous wavelength of light of the total of emitting laterally by emulation.Particularly, using can be from Co., Ltd. of match despot Nai Te system of Tokyo (Cybernet Systems Co., Ltd) software of obtaining with the trade name of " OPTAS-FILM " in August, 2005.

Though (its purpose of step 1) is finally, about with the R pixel, the G pixel, any one of B pixel overlapping areas, increase the intensity of peak luminous wavelength of the light of the total emit laterally as far as possible, but the high refractive index layer of the stacked film 18 of insulator (the second interlayer insulating film 16a, 16b, 16c) and low-index layer (the second interlayer insulating film 17a, 17b, thickness 17c) all is public in arbitrary region, so at first with the G pixel overlapping areas of the peak luminous wavelength of the about 540nm of almost centre wavelength with visible region in, high refractive index layer 16a, low-index layer 17a, high refractive index layer 16b, low-index layer 17b, high refractive index layer 16c, low-index layer 17c, pixel capacitors 4G, hole injection/transfer layer 28G, intermediate layer 29G, the thickness optimization of luminescent layer 7G.Particularly, change the thickness of each layer on one side, repeat on one side to infer the intensity of peak luminous wavelength of the light of the total of emitting laterally from the stacked film 18 of insulator, emitting in the thickness combination of the light of peak luminous wavelength maximum intensity thickness combination selection as the best.Refractive index and extinction coefficient exist with ... light wavelength, so in this stage, use the optical constant (refractive index and extinction coefficient) about green wavelength (540nm).Obtain like this be about with the thickness of each layer of the G pixel overlapping areas of Fig. 3.

(step 2) then about with R pixel (the about 620nm of peak luminous wavelength) overlapping areas, the value that the fixed thickness of high

refractive index layer

16a, 16b, 16c and low-

index layer

17a, 17b, 17c is obtained in step 1 is the thickness optimization of pixel capacitors 4R, hole injection/transfer layer 28R, intermediate layer 29R, luminescent layer 7R.Particularly, thickness with high

refractive index layer

16a, 16b, 16c and low-

index layer

17a, 17b, 17c is to determine condition, change the thickness of pixel capacitors 4R, hole injection/transfer layer 28R, intermediate layer 29R, luminescent layer 7R on one side, repeat on one side to infer the intensity of peak luminous wavelength of the light of the total of emitting laterally from the stacked film 18 of insulator, emitting in the thickness combination of the light of peak luminous wavelength maximum intensity thickness combination selection as the best.In this stage, use optical constant (refractive index and extinction coefficient) about red wavelength (620nm).Obtain like this be about with the thickness of each layer of the R pixel overlapping areas of Fig. 3.

(step 3) then, about with B pixel (the about 470nm of peak luminous wavelength) overlapping areas, the value that the fixed thickness of high

refractive index layer

16a, 16b, 16c and low-

index layer

refractive index layer

16a, 16b, 16c and low-

index layer

17a, 17b, 17c is to determine condition, change the thickness of pixel capacitors 4R, hole injection/transfer layer 28R, intermediate layer 29R, luminescent layer 7R on one side, repeat on one side to infer the intensity of peak luminous wavelength of the light of the total of emitting laterally from the stacked film 18 of insulator, emitting in the thickness combination of the light of peak luminous wavelength maximum intensity thickness combination selection as the best.In this stage, use optical constant (refractive index and extinction coefficient) about blue wavelength (470nm).Obtain like this be about with the thickness of each layer of the B pixel overlapping areas of Fig. 3.

As mentioned above, at first about with G pixel overlapping areas, decision comprises high

refractive index layer

16a, 16b, 16c and low-index layer 17a, the 17b of the stacked film 18 of insulator, each layer thickness of 17c, then about with other pixel overlapping areas, these layers of fixed insulation body stacked film 18 determine the thickness of other layers., the optimization step of high

refractive index layer

16a, 16b, 16c and low-

index layer

17a, 17b, 17c (in the step 1), can with the arbitrary pixel overlapping areas of R, G, B benchmark as the thickness decision.; if as present embodiment; with the G pixel overlapping areas of the almost centre wavelength of visible light as benchmark; then determine the thickness of pixel capacitors 4R, hole injection/transfer layer 28R, intermediate layer 29R, luminescent layer 7R easily; thereby about with any one of R pixel, G pixel, B pixel overlapping areas, all emit high-intensity light laterally.

Fig. 5 is expression from the curve chart of the frequency spectrum of the light of emitting through transparent substrates 1 with each pixel overlapping areas of the organic El device 100 of present embodiment.Fig. 6 is the curve chart from the frequency spectrum of the light of emitting through transparent substrates with each pixel overlapping areas of the organic El device of comparative example.In these figure, represent respectively from the light frequency of emitting with R pixel, G pixel, B pixel overlapping areas by the curve of red, green, blue difference.Though not shown, the organic El device of comparative example has the transparent substrates of glass, forms the SiN of thickness 600nm thereon _xThe single interlayer insulating film of system, form R, G thereon, the organic EL of B.Each organic EL of comparative example has the pixel capacitors (transparent anode) of the ITO system of the thickness 50nm that is formed on the interlayer insulating film, the hole injection/transfer layer that forms PEDOT/PSS system thereon, formation intermediate layer (electronic barrier layer), formation luminescent layer, formation reflexive metal negative electrode thereon thereon thereon.About the organic EL of random color, the thickness of pixel capacitors, hole injection/transfer layer, intermediate layer and luminescent layer is public.

In Fig. 5, though relative intensity is with there not being the stacked film 18 of insulator, obtain divided by the light intensity of emitting of the organic El device 100 of present embodiment from the maximum intensity of the light frequency of emitting with R pixel, G pixel, B pixel overlapping areas of other conditions organic El device identical with present embodiment.In Fig. 6, though relative intensity is with there not being interlayer insulating film, obtain divided by the light intensity of emitting of the organic El device of comparative example from the maximum intensity of the light frequency of emitting with R pixel, G pixel, B pixel overlapping areas of other conditions organic El device identical with comparative example.From Fig. 5 and Fig. 6 as can be known, according to present embodiment, be that the organic El device of conventional art is compared with comparative example, intensity of all kinds is big, and the frequency spectrum half breadth is narrow.Therefore, according to present embodiment, can improve the colorimetric purity of the light of output.

As mentioned above, according to present embodiment, the peak luminous wavelength of R pixel no matter, the peak luminous wavelength of G pixel, the peak luminous wavelength of B pixel by the stacked film 18 of insulator, can prevent high-intensity light.Therefore, can improve the colorimetric purity of the light of output.A plurality of low-

index layer

17a, 17b, 17c in the stacked film 18 of insulator have the thickness that differs from one another, but low-

index layer

17a, 17b, 17c respectively with any one overlapping areas of R pixel, G pixel, B pixel in have the same thickness, so need not make varied in thickness according to pixel.Promptly has public structure with the overlapping stacked film 18 of insulator of R pixel, G pixel, B pixel.In addition, need not design the layer of resonance of resonance, the B light of the resonance that is suitable for R light, G light respectively.Therefore, the structure of organic El device 100 is simple, makes easily.

In the past, make in the structure of photoresonance with the stacked film of the insulator of alternately laminated a plurality of low-index layers and a plurality of high refractive index layers, according to described expression formula 1, general low-index layer has mutually the same thickness, high refractive index layer has mutually the same thickness, but the present inventor has been found that to differ with such structure and obtains significant resonance effect surely.As present embodiment, a plurality of low-

index layer

17a, 17b, 17c have the thickness that differs from one another, a plurality of high refractive index layer 16a, when 16b, 16c have the thickness that differs from one another, and any photoresonance of R, G, B can be emitted with high strength.

In addition, according to present embodiment, the combination of the layer of the layer (comprising pixel capacitors 4 and luminescent layer 7) from pixel capacitors 4 (optically transparent electrode) to luminescent layer 7 is different according to the illuminant colour of pixel, even, also obtain the suitable reflection characteristic corresponding easily with each illuminant colour so have public structure with the overlapping stacked film 18 of insulator of R pixel, G pixel, B pixel.Though forming the film of different-thickness according to the zone is difficult, or usually become complicated, but when using the luminescent layer 7 of high score subclass, when forming hole injection/transfer layer 28 and luminescent layer 7, can adopt drip the like that method of fluent material of ink-jet method, so, control the thickness of hole injection/transfer layer 28 and luminescent layer 7 easily by the amount of dripping of suitable adjustment fluent material.

In this embodiment, be provided as the intermediate layer 29 of electronic barrier layer between luminescent layer 7 and hole injection/transfer layer 28, infer at the output light intensity, luminous with the interface BO (with reference to Fig. 4) between luminescent layer 7 and intermediate layer 29 is prerequisite., such intermediate layer can be set.When not having intermediate layer 29, luminous by the equilbrium position in the electronics of the characteristic of hole injection/transfer layer 28, luminescent layer 7 and electron injecting layer 8 decision and hole at luminous position.For example do not have the intermediate layer, use PEDOT/PSS as hole injections/transfer layer 28, use LiF is during as electron injecting layer 8, about pixel arbitrarily, is not at interface BO, and luminous in luminescent layer 7.In the R pixel, luminous from the position of the about 30nm of interface BO.When not having the intermediate layer, use these luminous positions, according to described method, can calculate the output light intensity.

The following describes an example of the manufacture method of described organic El device.

At first, shown in Fig. 7 (a), on pre-prepd transparent substrates 1, form the semiconductor layer 13 of island.Here, polysilicon film by photoetching process, is formed semiconductor layer 13 one to one at each pixel region A (with reference to Fig. 2).

Then cover semiconductor layer 13 and on transparent substrates 1, form gate insulating film 30.Particularly, by CVD method or other vapour deposition methods SiO ₂Form thickness 75nm.Then, on described gate insulating film 30, promptly semiconductor layer 13 with the channel region overlapping areas on form the grid 12 of island.Particularly, form the A film, use photoetching process its composition by sputtering method.

Then shown in Fig. 7 (b), form first interlayer insulating film 31.Particularly, by CVD method or other vapour deposition methods SiO ₂Form thickness 800nm.Then form the contact hole 23 on the source region that is connected semiconductor layer 13.Particularly,, form the through hole in the source region that arrives semiconductor layer 13,, form contact hole 23 by electric conducting materials such as filling Al in this through hole by mask etching for the gate insulating film 30 and first interlayer insulating film 31.Then, on first interlayer insulating film 31, form the source electrode 11 that is connected on the contact hole 23, cover source electrode 11 again and on first interlayer insulating film 31, form the second

interlayer insulating film

16a, 16b, 17a, 17b, 16c, 17c.

Then, at the contact hole 24 that forms on second interlayer insulating film 16a～17c on the drain region that is connected semiconductor layer 13.Particularly,, form the through hole in the drain region that arrives semiconductor layer 13,, form contact hole 24 by electric conducting materials such as filling Al in this through hole by mask etching to second interlayer insulating film 16a～17c.Then, on the second interlayer insulating film 17c, form the pixel capacitors 4 that is connected on the contact hole 24.Particularly, by sputtering method ITO is formed given pattern.Particularly, pixel capacitors 4 forms above-mentioned optimum film thickness by each color.Particularly, the pixel capacitors 4R of R pixel forms the thickness of 95nm, and the pixel capacitors 4G of G pixel forms the thickness of 50nm, and the pixel capacitors 4B of B pixel forms the thickness of 50nm.

Then, shown in Fig. 8 (a), form the SiO that has with each pixel region A (with reference to Fig. 2) corresponding opening 51a of portion ₂First cofferdam 51 of system.Particularly, carry out SiO ₂Film forms step, lithography step and etching step.Form first cofferdam 51, thereby the outer edge of the circumference of peristome 51a and pixel capacitors 4 is overlapping.On first cofferdam 51, form second cofferdam (next door) 52 that has with each pixel region A corresponding opening 52a of portion.This second cofferdam 52 is polyacrylic resins, and drying steps, lithography step, the etching step of the applying step of the solution by comprising polyacrylic resin, the film of coating form.

Then, shown in Fig. 8 (b), the aqueous constituent 61 of configuration on the pixel capacitors 4 in the peristome 51a, the 52a that form by each cofferdam 51,52.Here,, adopt disclosed liquid phase method (wet technology, wet type coating process), for example use whirl coating, ink-jet (drop ejection) method, crack coating process, dip coating method, spray into embrane method, print process as the collocation method of aqueous constituent 61.Such liquid phase method is the method that is suitable for the macromolecular material film forming, compares with vapor phase method, is not the equipment with high prices such as vacuum plants, just can cheaply make organic El device.By using such liquid phase method, form aqueous constituent 61 on the pixel capacitors 4 in each peristome 5.

Aqueous constituent 61 be used to form the material dissolves of hole injection/transfer layer 28 or be distributed to solvent, the material dissolves that is used to form intermediate layer 29 or be distributed to solvent, the material dissolves that is used to form luminescent layer (organic EL layer) 7 or be distributed to solvent.Promptly when forming hole injection/transfer layer 28, intermediate layer 29 luminescent layers 7, become the configuration of aqueous constituent 61 of the material of each layer, drying.Shown in Fig. 8 (C), after the formation hole injection/transfer layer 28, form intermediate layer 29, form

luminescent layer

7R, 7G, 7B of all kinds then.

Hole injection/transfer layer 28 is by the above-mentioned optimum film thickness of formation of all kinds, and particularly, the hole injection/transfer layer 28R of R pixel is 70nm, and the hole injection/transfer layer 28G of G pixel is 70nm, and the hole injection/transfer layer 28G of B pixel is 30nm.In addition, intermediate layer 29 is by the above-mentioned optimum film thickness of formation of all kinds, and particularly, the intermediate layer 29R of R pixel is 8nm, and the intermediate layer 29G of G pixel is 8nm, and the intermediate layer 29B of B pixel is 8nm.In addition, luminescent layer 7 is by the above-mentioned optimum film thickness of formation of all kinds, and particularly, the luminescent layer 7R of R pixel is 96nm, and the luminescent layer 7G of G pixel is 90nm, and the luminescent layer 7B of B pixel is 70nm.

Then, on transparent substrates 1 whole (promptly being equivalent on the luminescent layer 7 in the peristome 5 of pixel region and on second next door 52) forms the electron injecting layer 8 that is made of LiF by vacuum vapour deposition, on electron injecting layer 8, form the opposite electrode (negative electrode) 9 that constitutes by Al again by vacuum vapour deposition, thus the organic El device 100 with structure shown in Figure 2.

＜embodiment 2 〉

Below, illustrate that decision has other steps with each layer thickness of the organic El device 100 of embodiment 1 identical construction.In the method, suppose from outside phase organic El device 100, towards pixel capacitors 4 and luminescent layer 7, the white light vertical incidence of homenergic, the pixel of R, G, B becomes in the intensity of reflected light of each peak luminous wavelength and determines each layer thickness minimumly from transparent substrates 1 and the stacked film 18 of insulator.; need not be defined in the homenergic white light from the light of outside phase organic El device 100 vertical incidence; if be conceived to reflectivity, it is of equal value then determining the method for thickness of present embodiment and R pixel, G pixel, B pixel to become the method that determines each layer thickness at the reflectivity of each peak luminous wavelength minimumly.Here said " intensity of reflected light " be from the stacked film 18 of insulator to the reflection of incident light light of pixel capacitors 4 and luminescent layer 7 promptly from the output light intensity of pixel capacitors 4 to the total of the direction of the stacked film 18 of insulator, " reflectivity " be reverberation promptly from pixel capacitors 4 to the output light intensity of the total of the direction of the stacked film 18 of insulator for from the ratio of the stacked film 18 of insulator to the incident intensity of pixel capacitors 4 and luminescent layer 7.According to determining method, obtain the combination of thickness similarly to Example 1 (shown in Figure 3), can improve the colorimetric purity of the light of output.

Therefore, in the organic El device of obtaining 100, if luminescent layer 7 is luminous, then by the interface between intermediate layer 29 and the hole injection/transfer layer 28, interface between hole injection/transfer layer 28 and the pixel capacitors 4, the reflection at the interface between second interlayer insulating film 16a～16c of the interface between the stacked film 18 of pixel capacitors 4 and insulator and second interlayer insulating film 17a～17c of low-refraction and high index of refraction, generation resonance effect, at the R pixel, the G pixel, any peak luminous wavelength of B pixel, when not having the stacked film 18 of insulator also high-intensity light from the stacked film 18 of insulator laterally (for the stacked film 18 of insulator, an opposite side of luminescent layer 7, i.e. transparent substrates 1 one sides) emit.In addition, in identical organic El device 100, light is during from stacked film 18 1 side direction pixel capacitors 4 (optically transparent electrodes) 4 of insulator and luminescent layer 7 vertical incidence, by the interface between intermediate layer 29 and the hole injection/transfer layer 28, interface between hole injection/transfer layer 28 and the pixel capacitors 4, the reflection at the interface between second interlayer insulating film 16a～16c of the interface between the stacked film 18 of pixel capacitors 4 and insulator and second interlayer insulating film 17a～17c of low-refraction and high index of refraction is positioned at the R pixel, the G pixel, the reflectivity of other wavelength in this peak luminous wavelength ± 50nm of luminance factor of a wavelength in each peak luminous wavelength ± 20nm of B pixel is also low.For example, when light from the outside during to organic El device 100 vertical incidence, in the scope in peak luminous wavelength (the 620nm) ± 50nm of R pixel, the reflectivity of a wavelength that is positioned at the peak luminous wavelength ± 20nm of R pixel becomes minimum.

Fig. 9 is the ideograph of the advance route example of the light that causes of the vertical incidence light IL of organic El device 100 of expression present embodiment.In Fig. 9, the interface between the solid line presentation layer, the advance route of single-point line expression light.The advance route of illustrated light is the example of representative, has the advance route of a plurality of light in addition, but in order to make figure simple and clear, omits.In addition, the angle of the single-point of figure line is not correctly represented the angle of advancing of light, describes to distinguishing a plurality of advance routes easily.As can be seen from Figure 9, the interface between reflexive opposite electrode 9 and electron injecting layer 8, the whole light that absorbed by opposite electrode 9 are not to the right-hand reflection of figure.In addition, reflection and refraction take place in the interface of light between 2 layers that see through.As a result, from pixel capacitors 4 to the reverberation of the stacked film 18 of insulator from the stacked film 18 of insulator to the outgoing of the right side of figure.Use these catoptrical totals or be reflectivity, in the present embodiment, determine the thickness of each layer for the ratio of the total of reflection of incident light light.

The prerequisite of the deciding step of following each layer thickness that illustrates at first, is described.Two layers of vertical incidence are obtained by following expression formula (2)～(5) at reflectivity R, the transmissivity T at interface, the phase change φ r of reflection and the phase change φ t of transmission., n ₁Be the refractive index of the medium of incident one side, n ₂Be the refractive index of the medium of outgoing one side, k ₂Be the extinction coefficient of the medium of outgoing one side, refractive index and extinction coefficient exist with ... light wavelength.

R＝{(n ₁—n ₂) ²+k ₂ ²}/{(n ₁+n ₂) ²+k ₂ ²} ……(2)

T＝4n ₁n ₂/{(n ₁+n ₂) ²+k ₂ ²} ……(3)

Φr＝tan ^-1{2n ₁k ₂/(n ₁ ²—n ₂ ²—k ₂ ²)} ……(4)

Φt＝tan ^-1{k ₂/(n ₁+n ₂)} ……(5)

Use the thickness of expression formula (2)～(5) and each layer, homenergic white light about vertical incidence organic El device 100, obtain in the catoptrical intensity (amplitude) at each interface and phase place, see through light intensity (amplitude) and phase place, supposition is in internal reflection, through the catoptrical intensity (or amplitude) of transparent substrates 1 to the total of outside outgoing.Then, Yi Bian change the thickness of each layer,, obtain the optimum thickness of each layer Yi Bian repeat to infer the catoptrical intensity of the total of emitting laterally from the stacked film 18 of insulator.When the supposition of intensity, the photosyntometer of 3 secondary reflections from luminous to maximum.Than 3 times more the light of multiple reflection because the absorption of light in the layer, decay significantly.

As condition, in the thickness range of reality, make the varied in thickness of pixel capacitors 4, hole injection/transfer layer 28 and luminescent layer 7.Particularly, suppose that the material to pixel capacitors 4 uses ITO, the scope of thickness is limited to 40nm～100nm.Suppose that the material to hole injection/transfer layer 28 uses PEDOT/PSS, is limited to 20nm～100nm to the scope of this thickness.The thickness range of luminescent layer 7 is limited to 60nm～100nm.

Use software, infer the catoptrical intensity of the total of emitting laterally by emulation.Particularly, using can be from Co., Ltd. of match despot Nai Te system of Tokyo (CybernetSystems Co., Ltd) software of obtaining with the trade name of " OPTAS-FILM " in August, 2005.

Though (its purpose of step 1) is finally, about with the R pixel, the G pixel, any one of B pixel overlapping areas, reduce the intensity of reflected light of the peak luminous wavelength of corresponding pixel as far as possible, but the high refractive index layer of the stacked film 18 of insulator (the second interlayer insulating film 16a, 16b, 16c) and low-index layer (the second interlayer insulating film 17a, 17b, thickness 17c) all is public in arbitrary region, so at first with the G pixel overlapping areas of the peak luminous wavelength of the about 540nm of almost centre wavelength with visible region in, high refractive index layer 16a, low-index layer 17a, high refractive index layer 16b, low-index layer 17b, high refractive index layer 16c, low-index layer 17c, pixel capacitors 4G, hole injection/transfer layer 28G, intermediate layer 29G, the thickness optimization of luminescent layer 7G.Particularly, change the thickness of each layer on one side, repeat on one side to infer the intensity of peak luminous wavelength of the light of the total of emitting laterally from the stacked film 18 of insulator, emitting in the thickness combination of the light of peak luminous wavelength maximum intensity thickness combination selection as the best.Refractive index and extinction coefficient exist with ... light wavelength, so in this stage, use the optical constant (refractive index and extinction coefficient) about green wavelength (540nm).Obtain like this about with the identical thickness of each layer thickness of the G pixel overlapping areas of Fig. 3.

refractive index layer

16a, 16b, 16c and low-

index layer

refractive index layer

16a, 16b, 16c and low-

index layer

17a, 17b, 17c is to determine condition, change the thickness of pixel capacitors 4R, hole injection/transfer layer 28R, intermediate layer 29R, luminescent layer 7R on one side, repeat on one side to infer the intensity of the catoptrical peak luminous wavelength of the total of emitting laterally from the stacked film 18 of insulator, emitting in the thickness combination selection of the catoptrical thickness combination of peak luminous wavelength minimum intensity as the best.In this stage, use optical constant (refractive index and extinction coefficient) about red wavelength (620nm).Obtain like this about with the identical thickness of each layer thickness of the R pixel overlapping areas of Fig. 3.

refractive index layer

16a, 16b, 16c and low-

index layer

refractive index layer

16a, 16b, 16c and low-

index layer

17a, 17b, 17c is to determine condition, change the thickness of pixel capacitors 4R, hole injection/transfer layer 28R, intermediate layer 29R, luminescent layer 7R on one side, repeat on one side to infer the intensity of the catoptrical peak luminous wavelength of the total of emitting laterally from the stacked film 18 of insulator, emitting in the thickness combination selection of the catoptrical thickness combination of peak luminous wavelength minimum intensity as the best.In this stage, use optical constant (refractive index and extinction coefficient) about blue wavelength (470nm).Obtain like this about with the identical thickness of thickness of each layer of the B pixel overlapping areas of Fig. 3.

refractive index layer

16a, 16b, 16c and low-

index layer

17a, 17b, 17c (in the step 1), can with the arbitrary pixel overlapping areas of R, G, B benchmark as the thickness decision.; if as present embodiment; with the G pixel overlapping areas of the almost centre wavelength of visible light as benchmark; just determine the thickness of pixel capacitors 4R, hole injection/transfer layer 28R, intermediate layer 29R, luminescent layer 7R easily; thereby about with any one of R pixel, G pixel, B pixel overlapping areas, all emit high-intensity light laterally.

Figure 10～Figure 12 be expression for from the outside of each pixel overlapping areas of the organic El device 100 of present embodiment through the figure of transparent substrates 1 to the reflection of light rate frequency spectrum of organic El device 100 vertical incidence.Figure 10 represent about with the reflectivity frequency spectrum of R pixel overlapping areas, Figure 11 represent about with the reflectivity frequency spectrum of G pixel overlapping areas, Figure 12 represent about with the reflectivity frequency spectrum of B pixel overlapping areas.The reflectivity of other wavelength of luminance factor peak luminous wavelength ± 50nm of a wavelength of each peak luminous wavelength ± 20nm of confirming to be positioned at R pixel, G pixel, B pixel from these figure is also low.For example when organic El device 100 vertical incidence, in the scope of peak luminous wavelength (the 620nm) ± 50nm of R pixel, the reflectivity of some wavelength that is positioned at the peak luminous wavelength ± 20nm of R pixel becomes minimum light from the outside.

According to the determining method of each layer thickness of present embodiment, obtain the organic El device 100 (Fig. 3 represent details) identical with embodiment 1.Therefore, expression is identical from curve chart and Fig. 5 of the frequency spectrum of the light of emitting through transparent substrates 1 with each pixel overlapping areas of the organic El device of being obtained by present embodiment 100.As described about embodiment 1, if with reference to Fig. 5 with about Fig. 6 of comparative example, it is clear then to become, and according to this enforcement stream, can improve the colorimetric purity of the light of exporting.

In addition, a plurality of low-

index layer

17a, 17b, 17c respectively with any one overlapping areas of R pixel, G pixel, B pixel in have the same thickness, a plurality of high

refractive index layer

16a, 16b, 16c respectively with any one overlapping areas of R pixel, G pixel, B pixel in have the same thickness, so need not make varied in thickness according to pixel.Promptly has public structure with the overlapping stacked film 18 of insulator of R pixel, G pixel, B pixel.In addition, need not design the layer of resonance of resonance, the B light of the resonance that is suitable for R light, G light respectively.In addition, second interlayer insulating film 16a～16c, 17a～17c have the same thickness, so by etching, can unify to form whole contact holes 24.Therefore, this organic El device 100 is simple in structure, easy to manufacture.

index layer

The combination of＜other thickness 〉

If calculate the thickness of each layer according to the above embodiments 1 and embodiment, the then combination of not only above-mentioned thickness (Fig. 3), and obtain other combinations.Figure 13～Figure 15 represents these combinations (type A～type L).In Figure 13～Figure 15, R, G, B represent respectively with R pixel overlapping areas, with G pixel overlapping areas, with B pixel overlapping areas.Same with Fig. 3, in these figure, top more row is with corresponding from first opposite electrode layer far away more.

In the organic El device of type A～type L of Figure 13～shown in Figure 15, if luminescent layer 7 is luminous, then by the interface between intermediate layer 29 and the hole injection/transfer layer 28, interface between hole injection/transfer layer 28 and the pixel capacitors 4, the reflection at the interface between second interlayer insulating film 16a～16c of the interface between the stacked film 18 of pixel capacitors 4 and insulator and second interlayer insulating film 17a～17c of low-refraction and high index of refraction, generation resonance effect, at the R pixel, the G pixel, any peak luminous wavelength of B pixel, when not having the stacked film 18 of insulator also high-intensity light from the stacked film 18 of insulator laterally (for the stacked film 18 of insulator, an opposite side of luminescent layer 7, i.e. transparent substrates 1 one sides) emit.In addition, in identical organic El device 100, light is during from stacked film 18 1 side direction pixel capacitors 4 (optically transparent electrodes) 4 of insulator and luminescent layer 7 vertical incidence, by the interface between intermediate layer 29 and the hole injection/transfer layer 28, interface between hole injection/transfer layer 28 and the pixel capacitors 4, the reflection at the interface between second interlayer insulating film 16a～16c of the interface between the stacked film 18 of pixel capacitors 4 and insulator and second interlayer insulating film 17a～17c of low-refraction and high index of refraction is positioned at the R pixel, the G pixel, the reflectivity of other wavelength in this peak luminous wavelength ± 50nm of luminance factor of a wavelength in each peak luminous wavelength ± 20nm of B pixel is also low.Therefore, about embodiment 1 and embodiment 2, can obtain above-mentioned effect.

In embodiment 1 and embodiment 2, the number of plies of the stacked film of insulator 18 inside is that the total number of plies of high refractive index layer and low-index layer is 6., as the type G of Figure 14, as illustrative, the number of plies of the stacked film of insulator 18 inside can be 8, can be other numbers of plies for example 2,4,10 or bigger., if stacked number increases the tendency that just exists the visual angle interdependence to strengthen.The tendency that promptly exists the angle of visual field to narrow down.

＜embodiment 3 〉

Can resemble distortion as shown in Figure 16 to organic El device 100.In embodiment shown in Figure 16 3, the overlapping colour filter CF of difference in R pixel, G pixel, B pixel.Colour filter CF absorbs the light of other wavelength zones to the transmittance of the wavelength zone of the glow color of corresponding pixel.For example make the transmittance of red wavelength zone (620nm) near, absorb the light of other wavelength zones with the overlapping colour filter CF of R pixel.Colour filter CF is bonded on from pixel and emits on the transparent substrates 1 of light one side, is surrounded by black matrix matrix B M around it.Overlapping protection film 19 on colour filter CF and black matrix matrix B M is provided with the stacked film 18 of insulator thereon.By overlapping colour filter CF on each pixel like this, can improve contrast and colorimetric purity.The colorimetric purity that is the light of pixel when luminous improves, and when pixel was not luminous, this pixel seemed darker.

＜embodiment 4 〉

Figure 17 represents the inorganic EL device of the embodiment of the invention 4.As EL device of the present invention, be that example describes with the organic El device, but inorganic EL device also within the scope of the invention.As shown in figure 17, inorganic EL device have the optically transparent electrode 202 that on the transparent substrates 201 of glass, forms by ITO, thereon by SiN _xFirst dielectric film 203 that forms, the luminescent layer 204 that forms thereon, thereon by SiN _x Second dielectric film 205 that forms, the backplate 206 that forms by Al thereon.According to the present invention, between transparent substrates 201 and optically transparent electrode 202, exist to have by SiN _xThe low-index layer that forms and for example by SiN _xThe stacked film 207 of insulator of the high refractive index layer 209 that forms, with any one overlapping areas of the pixel of R, G, B in, low-index layer 208 and high refractive index layer 209 being of uniform thickness separately, according to the glow color of pixel, the combination difference of the thickness of transparent substrates 201, first dielectric film 203, luminescent layer 204.

And, with the thickness of embodiment 1 or embodiment 2 same each layers of decision.In the inorganic EL device of obtaining, if luminescent layer 204 is luminous, then because the interface between first dielectric film 203 and the optically transparent electrode 202, interface between the stacked film 207 of optically transparent electrode 202 and insulator, the reflection at the interface between low-index layer 208 and the high refractive index layer 209, generation resonance effect, at the R pixel, the G pixel, any peak luminous wavelength of B pixel, when not having the stacked film 207 of insulator also high-intensity light from the stacked film 207 of insulator laterally (for the stacked film 207 of insulator, an opposite side of luminescent layer 204, i.e. transparent substrates 201 1 sides) emit.In addition, in identical inorganic EL device, light is during from stacked film 207 1 side direction optically transparent electrodes 202 of insulator and luminescent layer 204 vertical incidence, because the reflection at the interface between interface, low-index layer 208 and the high refractive index layer 209 between the stacked film 207 of interface, optically transparent electrode 202 and insulator between first dielectric film 203 and the optically transparent electrode 202, the reflectivity of other wavelength of this peak luminous wavelength ± 50nm of luminance factor of a wavelength of each peak luminous wavelength ± 20nm that is positioned at R pixel, G pixel, B pixel is also low.Therefore, about embodiment 1 and embodiment 2, obtain above-mentioned effect.Can there be first dielectric film 203.

＜e-machine 〉

The various e-machines that have EL device of the present invention below with reference to Figure 18 explanation.Figure 18 (a) is the stereogram of expression mobile phone one example.In Figure 18 (a), symbol 600 expression mobile phone main bodys, the display part of the described device of EL is arbitrarily used in symbol 601 expressions.Figure 18 (b) is the stereogram of an example of portable information processing devices such as expression word processor, PC.In Figure 18 (b), symbol 700 is information processors, input parts such as symbol 701 expression keyboards, and symbol 703 expression information processor main bodys, the display part of the described device of EL is arbitrarily used in symbol 702 expressions.In Figure 18 (c), symbol 800 expression wrist-watch main bodys, the display part of the described device of EL is arbitrarily used in symbol 801 expressions.

Each e-machine shown in Figure 18 (a)～(c) has the described device of EL arbitrarily as display part, can realize the reality that colorimetric purity is high.

Claims

1. EL device has:

R pixel, this R pixel have the 1st electrode, the opposite electrode relative with described the 1st electrode and are clipped between described the 1st electrode and the described opposite electrode and send the 1st luminescent layer of the light with the 1st peak wavelength;

B pixel, this B pixel have the 3rd electrode, the described opposite electrode relative with described the 3rd electrode and are clipped between described the 3rd electrode and the described opposite electrode and send the 2nd luminescent layer of the light with 2nd peak wavelength different with described the 1st peak wavelength;

G pixel, this G pixel have the 5th electrode, the described opposite electrode relative with described the 5th electrode and are clipped between described the 5th electrode and the described opposite electrode and send the 3rd luminescent layer of the light with 3rd peak wavelength different with described the 1st, 2 peak wavelengths;

The stacked film of insulator, the stacked film of this insulator be formed on described the 1st electrode and the face described the 1st luminescent layer opposition side, on described the 3rd electrode and the face described the 2nd luminescent layer opposition side and on described the 5th electrode and the face described the 3rd luminescent layer opposition side,

Described the 1st, 3,5 electrodes are optically transparent electrodes;

The stacked film of described insulator has comprised a plurality of low-index layers with regulation refractive index and has had a plurality of high refractive index layers than the refractive index of described low-refraction floor height; Described low-index layer and described high refractive index layer are alternately laminated;

Each of described a plurality of low-index layers, the light-emitting zone whole district of striding described R pixel, described G pixel and described B pixel forms, though with described R pixel, described G pixel and described B pixel in any one overlapping areas in also have the same thickness;

Each of described a plurality of high refractive index layers, the light-emitting zone whole district of striding described R pixel, described G pixel and described B pixel forms, though with described R pixel, described G pixel and described B pixel in any one overlapping areas in also have the same thickness;

A plurality of described low-index layers have different thickness each other;

A plurality of described high refractive index layers have different thickness each other,

When light from stacked film one side direction the described the 1st of described insulator, the 3rd, the 5th electrode and the described the 1st, the 3rd, during the 5th luminescent layer vertical incidence, by being in intermediate layer between stacked film of described insulator and the described opposite electrode and the interface between the injection/transfer layer of hole, described hole injection/transfer layer and the described the 1st, the 3rd, interface between the 5th electrode, the described the 1st, the 3rd, the reflection at the interface between the interface between the 5th electrode and the stacked film of described insulator and described a plurality of low-index layer and the described a plurality of high refractive index layer, make and be positioned at described R pixel, described G pixel, the reflectivity of the wavelength in each peak luminous wavelength ± 20nm of described B pixel is lower than the reflectivity of other wavelength in this peak luminous wavelength ± 50nm.

2. EL device according to claim 1, it is characterized in that: the thickness that determines described a plurality of low-index layer and described a plurality of high refractive index layers, with convenient light during from stacked described optically transparent electrode of film one side direction of described insulator and described luminescent layer incident, at least pass through the reflection at the interface between described optically transparent electrode and the stacked film of described insulator, and the reflection at low-index layer adjacent one another are in described a plurality of low-index layer and the described a plurality of high refractive index layer and the interface between the high refractive index layer, make described R pixel, described G pixel and described B pixel each peak luminous wavelength ± reflectivity of wavelength in the 20nm, be lower than each peak luminous wavelength ± except the wavelength in the 20nm each peak luminous wavelength ± reflectivity in the 50nm.

3. EL device according to claim 1 and 2 is characterized in that:

Described optically transparent electrode and comprise the combination of the layer thickness from described optically transparent electrode to described luminescent layer of described luminescent layer is according to the glow color of described pixel and difference.

4. EL device according to claim 1 is characterized in that:

Described EL device is an organic El device;

Between described luminescent layer and described optically transparent electrode, dispose the intermediate layer, so that minimizing hole or electronics spill to described optically transparent electrode from described luminescent layer.

5. EL device according to claim 1 is characterized in that:

Light at the stacked film of described insulator penetrates side configuration colour filter.

6. an e-machine is characterized in that: have the described EL device of claim 1.