CN101350309A - Plane double diffusion metal oxide semiconductor device and preparation method - Google Patents
Plane double diffusion metal oxide semiconductor device and preparation method Download PDFInfo
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- CN101350309A CN101350309A CNA2008101194884A CN200810119488A CN101350309A CN 101350309 A CN101350309 A CN 101350309A CN A2008101194884 A CNA2008101194884 A CN A2008101194884A CN 200810119488 A CN200810119488 A CN 200810119488A CN 101350309 A CN101350309 A CN 101350309A
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
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CN2008101194884A CN101350309B (en) | 2008-09-01 | 2008-09-01 | Plane double diffusion metal oxide semiconductor device and preparation method |
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CN2008101194884A CN101350309B (en) | 2008-09-01 | 2008-09-01 | Plane double diffusion metal oxide semiconductor device and preparation method |
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CN101350309A true CN101350309A (en) | 2009-01-21 |
CN101350309B CN101350309B (en) | 2011-04-20 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104766799A (en) * | 2014-01-07 | 2015-07-08 | 北大方正集团有限公司 | Field effect transistor manufacturing method and corresponding field effect transistor |
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2008
- 2008-09-01 CN CN2008101194884A patent/CN101350309B/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104766799A (en) * | 2014-01-07 | 2015-07-08 | 北大方正集团有限公司 | Field effect transistor manufacturing method and corresponding field effect transistor |
CN104766799B (en) * | 2014-01-07 | 2018-07-06 | 北大方正集团有限公司 | A kind of preparation method of field-effect transistor and corresponding field-effect transistor |
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CN101350309B (en) | 2011-04-20 |
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ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: SHENZHEN FOUNDER MICROELECTRONIC CO., LTD. Effective date: 20120725 Owner name: SHENZHEN FOUNDER MICROELECTRONIC CO., LTD. Free format text: FORMER OWNER: PKU FOUNDER GROUP CO., LTD. Effective date: 20120725 |
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Free format text: CORRECT: ADDRESS; FROM: 100871 HAIDIAN, BEIJING TO: 518116 SHENZHEN, GUANGDONG PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20120725 Address after: 518116 Shenzhen city Longgang District Baolong Baolong Industrial City Seven Road No. five, founder Microelectronics Industrial Park Patentee after: Shenzhen Founder Microelectronic Co., Ltd. Address before: 100871, Haidian District Fangzheng Road, Beijing, Zhongguancun Fangzheng building, 298, 513 Co-patentee before: Shenzhen Founder Microelectronic Co., Ltd. Patentee before: Peking Founder Group Co., Ltd. |