CN101350287A - Method for cleaning semiconductor - Google Patents
Method for cleaning semiconductor Download PDFInfo
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- CN101350287A CN101350287A CNA2007100438707A CN200710043870A CN101350287A CN 101350287 A CN101350287 A CN 101350287A CN A2007100438707 A CNA2007100438707 A CN A2007100438707A CN 200710043870 A CN200710043870 A CN 200710043870A CN 101350287 A CN101350287 A CN 101350287A
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- cleaning
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- well region
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Abstract
The invention relates to a method for cleaning a semi-conductor, which comprises the following steps: firstly, providing a semi-conductor wafer substrate, forming a well region on the semi-conductor wafer substrate, forming a silicon oxide insulation layer on the well region, and forming a light-blocking layer on the silicon oxide insulation layer, then developing the light-blocking layer through utilizing developer solution, lastly, utilizing cleaning fluid to clean the developer solution on the semi-conductor wafer in a scanning mode. With the method for cleaning the semi-conductor of the invention, static electricity can not be excessively accumulated on the center of a wafer during the cleaning process, and the anti-electric shock of the silicon oxide insulation layer can not be damaged.
Description
Technical field
The present invention relates to a kind of method for cleaning semiconductor, particularly the cleaning method after the development of the BICMOS semiconductor crystal wafer being carried out with scan mode.
Background technology
The BICMOS semiconductor device is for having the semiconductor device of bipolar transistor and complementary field-effect transist (CMOS), and the BICMOS device has the speed-sensitive switch characteristic and the high current drives performance of the transistorized low-power consumption characteristic of CMOS and high integration characteristic and bipolar transistor.
The manufacture process of general BICMOS semiconductor device comprises that substrate cleans, is coated with the processing procedure of photoresistance, oven dry, exposure, development, cleaning, ion injection etc.At present, known cleaning unit is composition such as cleaning arm (not shown), washer jet 1 as shown in Figure 1, aim at the developer solution that BICMOS wafer 3 central areas sprinkling deionized water 2 is removed on the BICMOS wafers 3 with the washer jet 1 that cleaning arm is fixing with column and fixed form, rotating suction disc 6 is connected with drive unit as rotating driving device 5 via rotating shaft 4, rotating driving device 5 drives rotating suction disc 6 and drives BICMOS wafer 3 around rotating shaft 4 rotations, utilizes drive unit 5 can keep the state rotation and the lifting of wafer 3 at rotating suction disc 6.
But, in above-mentioned cleaning process, above-mentioned washer jet 1 fixed form is sprayed deionized water 2, and rotating suction disc 6 drives wafer 34 rotations around the shaft, deionized water 2 is inhomogeneous with wafer 3 frictions like this, cause that the nozzle 1 and the center of wafer 3 excessively accumulate static, as shown in Figure 4, easily at too much a large amount of puncture electric weight (the Quantity of breakdown of generation of static electricity of the center of wafer 3 accumulation, Qbd), so that destroy the anti-electrical breakdown capability of gate oxide, the puncture electric weight of generation influences the Performance And Reliability of BICMOS semiconductor device easily.
Summary of the invention
The object of the present invention is to provide a kind of method for cleaning semiconductor, make cleaning fluid clean the semiconductor die bowlder by this method and do not produce the puncture electric weight.
In order to reach described purpose, the invention provides a kind of method for cleaning semiconductor, this cleaning method may further comprise the steps: the semiconductor wafer substrate is provided, on this semiconductor crystal wafer substrate, form well region, on this well region, form a silicon dioxide insulating layer, form a photoresist layer in this silicon dioxide insulating layer, utilize developer solution that photoresist layer is developed, cleaning fluid cleans the developer solution on the semiconductor crystal wafer with scan mode.
In above-mentioned method for cleaning semiconductor, described semiconductor crystal wafer substrate is made up of P type silicon.
In above-mentioned method for cleaning semiconductor, described well region is a P type well region.
In above-mentioned method for cleaning semiconductor, described well region is a N type well region.
In above-mentioned method for cleaning semiconductor, described cleaning fluid passes through nozzles spray.
In above-mentioned method for cleaning semiconductor, described nozzle from the edge of semiconductor crystal wafer to the center multiple scanning move.
In above-mentioned method for cleaning semiconductor, the mind-set edge multiple scanning from semiconductor crystal wafer of described nozzle is moved.
In above-mentioned method for cleaning semiconductor, described nozzle moves in the round continuously multiple scanning of the margin and center of semiconductor crystal wafer.
In above-mentioned method for cleaning semiconductor, described cleaning fluid is a deionized water.
In above-mentioned method for cleaning semiconductor, described semiconductor is the semiconductor with bipolar transistor and complementary field-effect transist.
The present invention makes it compared with prior art owing to adopted above-mentioned technical scheme, has the semiconductor die of cleaning bowlder and does not produce the puncture electric weight, reaches the purpose that guarantees the semiconductor crystal wafer quality.
Description of drawings
The cleaning method of BICMOS semiconductor device of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is a cleaning device schematic diagram of the prior art;
Fig. 2 is a BICMOS semiconductor device profile of the present invention;
Fig. 3 is a cleaning method schematic diagram of the present invention;
Fig. 4 detects figure for the puncture electric weight of the BICMOS wafer after cleaning.
Embodiment
Below will the cleaning method of BICMOS semiconductor device of the present invention be described in further detail.
As shown in Figure 2, the BICMOS semiconductor device comprises a substrate 7, these substrate 7 materials are silicon or germanium or silicon Germanium compound, in the present invention, substrate is a P type silicon substrate, by LOCOS (local oxidation of silicon) and STI (narrow channel isolation) method, in P type silicon substrate 7, form element isolating oxide film 10, by energy and 5 * 10 with 350kev
13Cm
-2Concentration boron implant ion forms P type well region 8, and by the energy and 5 * 10 with 700kev
13Cm
-2Concentration is implanted phosphonium ion and is formed N type well region 9.The silicon dioxide insulating layer 11 of growing then, and after being coated with one deck photoresistance 12 on the silicon dioxide insulating layer 11, through strict drying procedure, obtain exposing patterns after exposing with ultraviolet ray or excimer laser again, develop according to pattern, utilize developer solution to remove the outer photoresistance of exposing patterns, the cleaning fluid that utilizes cleaning unit to spray again washes developer solution, at last silicon dioxide insulating layer 11 is carried out etching and produce gate electrode, wherein cleaning fluid is the cleaning fluid that deionized water etc. can be removed developer solution.
Fig. 3 is a cleaning method schematic diagram of the present invention.BICMOS wafer 22 is arranged on the rotating suction disc 23 in the mode on the rotating shaft that is centered close to rotating suction disc 23 25 of wafer 22, but, in the present invention, the center of wafer 22 is not necessarily leaveed no choice but be positioned on the rotation, and being positioned at rotating shaft 25 is that the zone of radius centered 1～15mm gets final product.Washer jet 26 is aimed at BICMOS wafer 22 central areas with the form of column and scanning motion and is sprayed the developer solution that deionized water 21 is removed on the BICMOS wafer 22, rotating suction disc 23 is connected with drive unit as rotating driving device 24 via rotating shaft 25, rotating driving device 24 drives rotating suction disc 23 and drives BICMOS wafer 22 around rotating shaft 25 rotations, utilizes drive unit 24 can keep the state rotation and the lifting of wafer 22 at rotating suction disc 23.When rotating suction disc 23 at the uniform velocity rotates BICMOS wafer 22, washer jet 26 is moved to the center of wafer 22 by the edge of wafer 22 on one side, spray cleaning fluid 21 on one side, when nozzle 26 moved to the center of wafer 22, the edge that nozzle 26 stops scanning motion and gets back to wafer 22 continue to repeat to finish until BICMOS wafer 22 is cleaned to the action of the center of wafer 22 scanning; Perhaps, another cleaning method, when rotating suction disc 23 at the uniform velocity rotates BICMOS wafer 22, washer jet 26 one side are moved by the edge of the middle mind-set wafer 22 of wafer 22, spray cleaning fluid 21 on one side, when nozzle 26 moves to the edge of wafer 22, continue to repeat to finish until BICMOS wafer 22 is cleaned to the action of edge's scanning of wafer 22 in the center that nozzle 26 stops scanning motion and gets back to wafer 22; Certainly, also has a kind of cleaning method, when rotating suction disc 23 at the uniform velocity rotates BICMOS wafer 22, washer jet 26 is moved to the center of wafer 22 by the edge of wafer 22 on one side, spray cleaning fluid 21 on one side, when nozzle 26 moves to the center of wafer 22, nozzle 26 begins from the center of wafer 22 to continue to repeat action to the scanning of the center of wafer 22 to the boundary scan of wafer 22 and the edge of getting back to wafer 22, that is to say that nozzle 26 comes and goes multiple scanning continuously at the margin and center of semiconductor crystal wafer 22 and moves until BICMOS wafer 22 is cleaned and finish.
At last, be depicted as the puncture electric weight detection figure of the BICMOS wafer after the cleaning as 4 figure.Center to the BICMOS wafer is detected, after can finding to utilize cleaning method of the present invention that the BICMOS wafer is cleaned, the cleaning fluid of nozzle and BICMOS wafer evenly rub, there is seldom or exists hardly the puncture electric weight in the BICMOS wafer, and after adopting the cleaning method of prior art, there are a large amount of electric weight that puncture in the BICMOS wafer.
That more than introduces only is based on preferred embodiment of the present invention, can not limit scope of the present invention with this.Any cleaning method of the present invention is done replacement, the combination, discrete of step well know in the art, and the invention process step is done well know in the art being equal to change or replace and all do not exceed exposure of the present invention and protection range.
Claims (10)
1, a kind of method for cleaning semiconductor, this cleaning method may further comprise the steps:
The semiconductor wafer substrate is provided;
On this semiconductor crystal wafer substrate, form well region;
On this well region, form a silicon dioxide insulating layer;
Form a photoresist layer in this silicon dioxide insulating layer;
Utilize developer solution that photoresist layer is developed;
Cleaning fluid cleans the developer solution on the semiconductor crystal wafer with scan mode.
2, method for cleaning semiconductor as claimed in claim 1 is characterized in that: described semiconductor crystal wafer substrate is made up of P type silicon.
3, method for cleaning semiconductor as claimed in claim 1 is characterized in that: described well region is a P type well region.
4, method for cleaning semiconductor as claimed in claim 1 is characterized in that: described well region is a N type well region.
5, method for cleaning semiconductor as claimed in claim 1 is characterized in that: described cleaning fluid passes through nozzles spray.
6, method for cleaning semiconductor as claimed in claim 5 is characterized in that: described nozzle from the edge of semiconductor crystal wafer to the center multiple scanning move.
7, method for cleaning semiconductor as claimed in claim 5 is characterized in that: the mind-set edge multiple scanning from semiconductor crystal wafer of described nozzle is moved.
8, method for cleaning semiconductor as claimed in claim 5 is characterized in that: described nozzle moves in the round continuously multiple scanning of the margin and center of semiconductor crystal wafer.
9, method for cleaning semiconductor as claimed in claim 1 is characterized in that: described cleaning fluid is a deionized water.
10, method for cleaning semiconductor as claimed in claim 1 is characterized in that: described semiconductor is the semiconductor with bipolar transistor and complementary field-effect transist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100438707A CN101350287A (en) | 2007-07-17 | 2007-07-17 | Method for cleaning semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100438707A CN101350287A (en) | 2007-07-17 | 2007-07-17 | Method for cleaning semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101350287A true CN101350287A (en) | 2009-01-21 |
Family
ID=40269018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100438707A Pending CN101350287A (en) | 2007-07-17 | 2007-07-17 | Method for cleaning semiconductor |
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| Country | Link |
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| CN (1) | CN101350287A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102725825A (en) * | 2010-05-31 | 2012-10-10 | 韩国机械研究院 | Ultrasonic precision cleaning apparatus |
| CN104952845A (en) * | 2014-03-28 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | Structure and method for detecting static of spraying nozzle |
| CN112259443A (en) * | 2020-10-12 | 2021-01-22 | 上海华力集成电路制造有限公司 | Wet cleaning method for wafer |
| CN113534622A (en) * | 2021-07-28 | 2021-10-22 | 华虹半导体(无锡)有限公司 | Developing method for removing electrostatic aggregation |
-
2007
- 2007-07-17 CN CNA2007100438707A patent/CN101350287A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102725825A (en) * | 2010-05-31 | 2012-10-10 | 韩国机械研究院 | Ultrasonic precision cleaning apparatus |
| CN102725825B (en) * | 2010-05-31 | 2015-11-25 | 韩国机械研究院 | Ultrasonic precision cleaning apparatus |
| CN104952845A (en) * | 2014-03-28 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | Structure and method for detecting static of spraying nozzle |
| CN104952845B (en) * | 2014-03-28 | 2018-05-11 | 中芯国际集成电路制造(上海)有限公司 | Detect nozzle electrostatic structure and method |
| CN112259443A (en) * | 2020-10-12 | 2021-01-22 | 上海华力集成电路制造有限公司 | Wet cleaning method for wafer |
| CN113534622A (en) * | 2021-07-28 | 2021-10-22 | 华虹半导体(无锡)有限公司 | Developing method for removing electrostatic aggregation |
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Open date: 20090121 |