CN101350238A - Method for processing surface of stacking slice type electronic element - Google Patents
Method for processing surface of stacking slice type electronic element Download PDFInfo
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- CN101350238A CN101350238A CNA2007100758917A CN200710075891A CN101350238A CN 101350238 A CN101350238 A CN 101350238A CN A2007100758917 A CNA2007100758917 A CN A2007100758917A CN 200710075891 A CN200710075891 A CN 200710075891A CN 101350238 A CN101350238 A CN 101350238A
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- phosphoric acid
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- surface treatment
- acid solution
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Abstract
The invention provides a surface treatment method of a multi-layer chip electronic component, which comprises the following steps: (1) multi-layer chip electronic components which are coated with silver are cleaned in ionized water for 1-5 minutes, are dried after removing surface impurities and await to be treated, phosphoric acid solution for surface treatment is prepared, and the temperature of the solution is kept in 40-90 DGE C. (2) Electronic component wafers which await to be treated are soaked in the phosphoric acid solution for 0.1-20 minutes. (3) The wafers after being soaked are dried in 25-130 DGE C. (4) The wafers after being dried are sintered in 300-900 DGE C. Using the treatment method which is provided by the invention, the operation is simple, the cost is low, and the self-performance of products is not affected.
Description
Technical field
The invention belongs to a kind of electronical elements surface processing method, relate in particular to a kind of surface treatment method of laminated electronic element.
Background technology
In the prior art, the surface treatment method of laminated electronic element mainly contains two kinds, a kind of is to adopt the mode of soaking, spray, printing at element wafer surface-coated one deck glass insulating material at Tu Yinqian, and another kind then applies insulating resin in being coated with the silver back in wafer surface.The former during the coated glass insulating material, exists interior electrode to be closed, to influence problems such as properties of product, operating difficulties easily before being coated with silver; The latter needs special equipment being coated with silver back coating insulating resin, and operating difficulties.
Summary of the invention
The technical problem that the embodiment of the invention will solve be to provide a kind of not only simple to operate, cost is low, and does not influence the laminated electronic element surface treatment method of product self performance.
The embodiment of the invention is achieved in that a kind of surface treatment method of laminated electronic element, comprises the steps:
(1) laminated electronic element that will be coated with behind the silver cleaned in deionized water 1-5 minute, removed behind the surface impurity dry, pending; And configuration surface processing phosphoric acid solution, keeping solution temperature is 40-90 ℃;
(2) pending electronic component wafer is soaked in the described phosphoric acid solution 0.1-20 minute;
(3) wafer after will soaking is dry down at 25-130 ℃;
(4) with dried wafer at 300-900 ℃ of following sintering.
Compared with prior art, the surface treatment method that technique scheme adopts, because adopting phosphoric acid solution to carry out electronical elements surface handles, phosphoric acid only reacts with chip porcelain body surface portion, and do not react with silver electrode, and phosphoric acid and the reaction of chip component porcelain body are after 300-900 ℃ of high temperature sintering step, form uniform insulating barrier in the place of product surface except that two end electrodes, this insulating barrier has moisture-proof, prevent to electroplate the advantage of diffusion, make product be easier to carry out electronickelling, tin is handled, and has improved the presentation quality of the soldering reliability and the product of product greatly.And the surface treatment operations that employing this method is carried out laminated electronic element is simple, with low cost.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer,, the present invention is further elaborated below in conjunction with embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Technical scheme provided by the present invention can be widely used in various laminated electronic elements, for example lamination type piezoresistor, lamination sheet type thermistor and laminated chip inductor/magnetic bead etc.
Embodiment 1
The surface treatment method of lamination sheet type thermistor may further comprise the steps:
(1) the lamination sheet type thermistor that will be coated with behind the silver cleaned in deionized water 2 minutes, removed behind the surface impurity 100 ℃ of oven dry, and is pending; And be that 90% phosphoric acid solution water-bath is heated to 70 ℃ with concentration;
(2) pending thermistor wafer is soaked in the described phosphoric acid solution 5 minutes;
(3) wafer after will soaking is air-dry at 25 ℃;
(4) with dried wafer 650 ℃ of following sintering 60 minutes;
Embodiment 2
The surface treatment method of lamination sheet type thermistor may further comprise the steps:
(1) the lamination sheet type thermistor that will be coated with behind the silver cleaned in deionized water 5 minutes, removed behind the surface impurity 120 ℃ of oven dry, and is pending; And be that 85% phosphoric acid solution (aqueous solution or ethanolic solution) water-bath is heated to 40 ℃ with concentration;
(2) pending thermistor wafer is soaked in the described phosphoric acid solution 0.1 minute;
(3) wafer after will soaking is 130 ℃ of oven dry;
(4) with dried wafer 900 ℃ of following sintering 0.1 hour;
Embodiment 3
The surface treatment method of lamination sheet type thermistor may further comprise the steps:
(1) the lamination sheet type thermistor that will be coated with behind the silver cleaned in deionized water 1 minute, removed behind the surface impurity 50 ℃ of oven dry, and is pending; And be that 10% phosphoric acid solution (aqueous solution or ethanolic solution) water-bath is heated to 90 ℃ with concentration;
(2) pending thermistor wafer is soaked in the described phosphoric acid solution 20 minutes;
(3) wafer after will soaking is air-dry at 100 ℃;
(4) with dried wafer 300 ℃ of following sintering 120 minutes;
Embodiment 4
The surface treatment method of lamination type piezoresistor may further comprise the steps:
(1) lamination type piezoresistor that will be coated with behind the silver cleaned in deionized water 2 minutes, removed behind the surface impurity 100 ℃ of oven dry; And compound concentration is 10% phosphoric acid solution (aqueous solution or ethanolic solution), and its water-bath is heated to 70 ℃;
(2) pending piezo-resistance wafer is soaked in the described phosphoric acid solution 20 seconds;
(3) wafer after will soaking is 120 ℃ of oven dry;
(4) with dried wafer 750 ℃ of following sintering 40 minutes;
Embodiment 5
The surface treatment method of lamination type piezoresistor may further comprise the steps:
(1) lamination type piezoresistor that will be coated with behind the silver cleaned in deionized water 5 minutes, removed behind the surface impurity 50 ℃ of oven dry; And compound concentration is 85% phosphoric acid solution (aqueous solution or ethanolic solution), and its water-bath is heated to 90 ℃;
(2) pending piezo-resistance wafer is soaked in the described phosphoric acid solution 20 minutes;
(3) wafer after will soaking is 25 ℃ of oven dry;
(4) with dried wafer 900 ℃ of following sintering 6 minutes;
Embodiment 6
The surface treatment method of lamination type piezoresistor may further comprise the steps:
(1) lamination type piezoresistor that will be coated with behind the silver cleaned in deionized water 1 minute, removed behind the surface impurity 120 ℃ of oven dry; And compound concentration is 90% phosphoric acid solution, and its water-bath is heated to 40 ℃;
(2) pending piezo-resistance wafer is soaked in the described phosphoric acid solution 20 seconds;
(3) wafer after will soaking is 120 ℃ of oven dry;
(4) with dried wafer 300 ℃ of following sintering 120 minutes;
Embodiment 7
The surface treatment method of laminated chip inductor/magnetic bead may further comprise the steps:
(1) laminated chip inductor/magnetic bead that will be coated with behind the silver cleaned in deionized water 2 minutes, removed behind the surface impurity 100 ℃ of oven dry; And compound concentration is 20% phosphoric acid solution (aqueous solution or ethanolic solution), and its water-bath is heated to 50 ℃;
(2) pending inductor/magnetic bead wafer is soaked in the above-mentioned solution 20 minutes;
(3) wafer after will soaking is 120 ℃ of oven dry;
(4) with dried wafer 850 ℃ of following sintering 80 minutes;
Embodiment 8
The surface treatment method of laminated chip inductor/magnetic bead may further comprise the steps:
(1) laminated chip inductor/magnetic bead that will be coated with behind the silver cleaned in deionized water 1 minute, removed behind the surface impurity 50 ℃ of oven dry; And compound concentration is 90% phosphoric acid solution, and its water-bath is heated to 40 ℃;
(2) pending inductor/magnetic bead wafer is soaked in 6 seconds in the above-mentioned solution;
(3) wafer after will soaking is 25 ℃ of oven dry;
(4) with dried wafer 300 ℃ of following sintering 120 minutes;
Embodiment 9
The surface treatment method of laminated chip inductor/magnetic bead may further comprise the steps:
(1) laminated chip inductor/magnetic bead that will be coated with behind the silver cleaned in deionized water 5 minutes, removed behind the surface impurity 120 ℃ of oven dry; And compound concentration is 10% phosphoric acid solution (aqueous solution or ethanolic solution), and its water-bath is heated to 90 ℃;
(2) pending inductor/magnetic bead wafer is soaked in the above-mentioned solution 20 minutes;
(3) wafer after will soaking is 120 ℃ of oven dry;
(4) with dried wafer 900 ℃ of following sintering 6 minutes;
After method is handled in adopting above each embodiment, because phosphoric acid only reacts with chip porcelain body surface portion, and do not react with silver electrode, and phosphoric acid and the reaction of chip component porcelain body are after 300-900 ℃ of high temperature sintering step, form uniform insulating barrier in the place of product surface except that two end electrodes, this insulating barrier moisture-proof and can prevent to electroplate diffusion makes product be easier to carry out electronickelling, tin is handled, and has improved the presentation quality of the soldering reliability and the product of product greatly.And the surface treatment operations that employing this method is carried out laminated electronic element is simple, with low cost.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1, a kind of surface treatment method of laminated electronic element comprises the steps:
(1) laminated electronic element that will be coated with behind the silver cleaned in deionized water 1-5 minute, removed behind the surface impurity dry, pending; And configuration surface processing phosphoric acid solution, keeping solution temperature is 40-90 ℃;
(2) pending electronic component wafer is soaked in the described phosphoric acid solution 0.1-20 minute;
(3) wafer after will soaking is dry down at 25-130 ℃;
(4) with dried wafer at 300-900 ℃ of following sintering.
2, surface treatment method according to claim 1 is characterized in that: described phosphoric acid solution is for analyzing pure phosphoric acid solution, and concentration is more than 85%.
3, surface treatment method according to claim 1 is characterized in that: described phosphoric acid solution is the ethanolic solution of phosphate aqueous solution or phosphoric acid, and concentration is 10%-85%.
4, surface treatment method according to claim 1 is characterized in that: drying steps described in the step (1) is 50-120 ℃ of oven dry.
5, surface treatment method according to claim 1 is characterized in that: wherein drying steps is oven dry or air-dry in the step (3).
6, surface treatment method according to claim 1 is characterized in that: wherein sintering time is 0.1-2 hour in the step (4).
7, surface treatment method according to claim 1 is characterized in that: described laminated electronic element comprises lamination sheet type thermistor, lamination type piezoresistor and laminated chip inductor/magnetic bead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100758917A CN101350238B (en) | 2007-07-16 | 2007-07-16 | Method for processing surface of stacking slice type electronic element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100758917A CN101350238B (en) | 2007-07-16 | 2007-07-16 | Method for processing surface of stacking slice type electronic element |
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| CN101350238A true CN101350238A (en) | 2009-01-21 |
| CN101350238B CN101350238B (en) | 2010-12-08 |
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| CN2007100758917A Expired - Fee Related CN101350238B (en) | 2007-07-16 | 2007-07-16 | Method for processing surface of stacking slice type electronic element |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015157957A1 (en) * | 2014-04-17 | 2015-10-22 | 中国科学院微电子研究所 | Method for cleaning langasite wafer |
| CN105428001A (en) * | 2014-09-18 | 2016-03-23 | 三星电机株式会社 | Chip Electronic Component And Manufacturing Method Thereof |
| CN106158591A (en) * | 2016-08-08 | 2016-11-23 | 凡音环保科技（苏州）有限公司 | A kind of surface treatment method of microelectronic element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614074A (en) * | 1994-12-09 | 1997-03-25 | Harris Corporation | Zinc phosphate coating for varistor and method |
| CN1226756C (en) * | 2002-01-22 | 2005-11-09 | 兴勤电子工业股份有限公司 | Varistor with phosphate insulation layer and making method thereof |
-
2007
- 2007-07-16 CN CN2007100758917A patent/CN101350238B/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015157957A1 (en) * | 2014-04-17 | 2015-10-22 | 中国科学院微电子研究所 | Method for cleaning langasite wafer |
| US10964529B2 (en) | 2014-04-17 | 2021-03-30 | Institute of Microelectronics, Chinese Academy of Sciences | Method for cleaning lanthanum gallium silicate wafer |
| CN105428001A (en) * | 2014-09-18 | 2016-03-23 | 三星电机株式会社 | Chip Electronic Component And Manufacturing Method Thereof |
| CN106158591A (en) * | 2016-08-08 | 2016-11-23 | 凡音环保科技（苏州）有限公司 | A kind of surface treatment method of microelectronic element |
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| Publication number | Publication date |
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| CN101350238B (en) | 2010-12-08 |
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