CN101346826A - Light emitting device and illumination instrument - Google Patents
Light emitting device and illumination instrument Download PDFInfo
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- CN101346826A CN101346826A CNA2006800488682A CN200680048868A CN101346826A CN 101346826 A CN101346826 A CN 101346826A CN A2006800488682 A CNA2006800488682 A CN A2006800488682A CN 200680048868 A CN200680048868 A CN 200680048868A CN 101346826 A CN101346826 A CN 101346826A
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Abstract
The present invention provides a light emitting unit and a lighting apparatus capable of handling different voltages. A lighting apparatus 1 includes a switching controller 2 and a light emitting unit 3. The light emitting unit 3 includes two light emitting arrays 21a and 21b and three voltage input terminals 22a to 22c. The switching controller 2 switches connection of the voltage input terminals 22a to 22c according to a supplied voltage of a power supply to connect the light emitting arrays 21a and 21b in parallel or series. A specified voltage is thus applied to the light emitting arrays 21a and 21b.
Description
Technical field
The present invention relates to have light-emitting device and the ligthing paraphernalia of going up a plurality of semiconductor light-emitting elements that form at same substrate (substrate).
Background technology
In the past, the known light-emitting device that a plurality of semiconductor light-emitting elements are set on same substrate.
For example in patent documentation 1, disclose light-emitting device 200 as shown in figure 18, be provided with in this device and have the semiconductor light-emitting elements 201a that on same substrate, is provided with and the light emitting array 202 of 201b.In this light-emitting device 200, the semiconductor light-emitting elements 201a of light emitting array 202 is configured, and becomes in the other direction so that its sense of current flows through sense of current for semiconductor light-emitting elements 201b.In addition, in light-emitting device 200, be provided with two sub-203a of public voltage input end and 203b, connect AC power P via sub-203a of this voltage input end and 203b at the both ends of the light emitting array 202 of both sides.
Between sub-203a of the voltage input end of light- emitting device 200 and 203b, when being supplied to as shown in figure 19 AC power Pe by AC power P, under the voltage that is applied in is positive situation, can make a semiconductor light-emitting elements 201a luminous, can make another semiconductor light-emitting elements 201b luminous under for negative situation at the voltage that is applied in.By so alternately making semiconductor light-emitting elements 201a and 201b luminous, in light-emitting device 200, the time that light emitting array 202 can be extinguished shortens to a certain degree.
Patent documentation 1: TOHKEMY 2004-6582 communique
Summary of the invention
The problem that invention will solve
But, in the light-emitting device 200 of above-mentioned patent documentation 1, only be provided with two sub-203a of voltage input end and 203b, so can only tackle a voltage.Therefore, if the voltage higher than assigned voltage is applied on sub-203a of voltage input end and the 203b, then semiconductor light-emitting elements 201a and 201b are applied in overvoltage, thereby the electric current that increases with exponential function flows through semiconductor light-emitting elements 201a and 201b.Therefore, produce and to make semiconductor light-emitting elements 201a and 201b breakdown, or shorten problem such as life-span.On the contrary, if the voltage lower than assigned voltage is applied on sub-203a of voltage input end and the 203b, it is not luminous then to produce each semiconductor light-emitting elements 201a and 201b, even or problem such as luminous but light is also faint.
In addition, even semiconductor light-emitting elements 201a and 201b are applied in forward voltage, do not applying certain threshold value V
tThe time of above voltage can not light.Therefore, even be applied in AC power Pe shown in Figure 19, be threshold voltage V at the absolute value of the voltage that applies
tFollowing time t
E1～time t
E2, semiconductor light-emitting elements 201a and 201b are lighted.Therefore, in light-emitting device 200, generation semiconductor light-emitting elements 201a and all non-luminous time of 201b are longer, the big such problem of the flicker of light.
The present invention proposes for solving above-mentioned problem, and its purpose is, a kind of light-emitting device and ligthing paraphernalia of tackling different voltage is provided, perhaps the long light-emitting device of the state lighted of any semiconductor light-emitting elements.
For solving the means of problem
For achieving the above object, the invention of technical scheme 1 is a kind of light-emitting device, it is characterized in that, comprising: have the one or more semiconductor light-emitting elements that on same substrate, form, and n identical (n 〉=2) light emitting array of assigned voltage; And corresponding to the end of described each light emitting array set (n+1) at least individual above voltage input end, described voltage input end can switch to described each light emitting array and be connected in series and be connected in parallel, so that described each light emitting array is applied assigned voltage.
In addition, the invention of technical scheme 2 is characterised in that in the light-emitting device of technical scheme 1, described each light emitting array has the described semiconductor light-emitting elements of equal number.
In addition, the invention of technical scheme 3 is characterised in that, in the light-emitting device of arbitrary technical scheme of technical scheme 1 or 2, described light emitting array has 2m described semiconductor light-emitting elements, m described semiconductor light-emitting elements is connected, so that its sense of current and the current opposite in direction that flows through remaining m described semiconductor light-emitting elements.
In addition, the invention of technical scheme 4 is characterised in that, in the light-emitting device of arbitrary technical scheme of technical scheme 1 to 3, described light emitting array is set to two, and described voltage input end is set to three.
In addition, the invention of technical scheme 5 is a kind of ligthing paraphernalias, it is characterized in that, comprise: light-emitting device, it comprises having the one or more semiconductor light-emitting elements that form on same substrate, and the identical n of assigned voltage (n 〉=a 2) light emitting array and corresponding to the end of described each light emitting array set (n+1) at least individual above voltage input end; And switching controls parts, be used to switch described voltage input end, described switching controls parts are according to the voltage that is applied on the described light-emitting device, described light emitting array is connected in series or is connected in parallel, so that the voltage that is applied on described each light emitting array becomes assigned voltage, automatically switch described voltage input end that is transfused to voltage simultaneously.
In addition, the invention of technical scheme 6 is a kind of light-emitting devices, it is characterized in that, comprising: three light emitting arrays with the one or more semiconductor light-emitting elements that form on same substrate; And an end that is arranged on described each light emitting array, and be supplied to three power input terminals of three-phase alternating-current supply, in described each power input terminals, be supplied to three AC power that phase place is different respectively.
In addition, the invention of technical scheme 7 is characterised in that in the light-emitting device of technical scheme 6, other ends of described three light emitting arrays are electrically connected mutually and are grounded.
In addition, the invention of technical scheme 8 is characterised in that, in the light-emitting device of arbitrary technical scheme of technical scheme 6 or 7, among described three light emitting arrays at least in any, be supplied to and be used to light the above voltage of the required threshold voltage of described light emitting array.
In addition, the invention of technical scheme 9 is characterised in that, in the light-emitting device of arbitrary technical scheme of technical scheme 6 to 8, described light emitting array has 2m described semiconductor light-emitting elements, m described semiconductor light-emitting elements is connected, so that its sense of current and the current opposite in direction that flows through remaining m described semiconductor light-emitting elements.
In addition, the invention of technical scheme 10 is characterised in that, in the light-emitting device of arbitrary technical scheme of technical scheme 6 to 9, described each light emitting array has the described semiconductor light-emitting elements of equal number.
The invention effect
According to light-emitting device of the present invention, by end (n+1) individual above voltage input end is set corresponding to n light emitting array, thereby can select to be connected between power source voltage input terminal or connection voltage input end corresponding to the voltage that is applied in.Therefore, can be connected to power supply making under the state that is connected in series between the light emitting array or is connected in parallel, so can make the voltage that is applied on each light emitting array become the assigned voltage of light emitting array.Therefore, can prevent puncture, can prevent simultaneously because of voltage hangs down the not luminous of caused semiconductor light-emitting elements, so can make it suitably luminous for the different voltage that applies because of the semiconductor light-emitting elements of the caused light emitting array of overvoltage.
According to ligthing paraphernalia of the present invention, the switching controls parts of voltage input end by changeable light-emitting device is set, thereby based on the voltage that is applied in, voltage input end that automatically will be transfused to voltage is connected to power supply, and will connect between voltage input end.Therefore, the user can easily ligthing paraphernalia be connected to power supply and with apply independent from voltage.
According to light-emitting device of the present invention, because of each input terminal to three power input terminals of the end that is arranged on light emitting array, supply with three different AC power of phase place from three-phase alternating-current supply, so can prolong the time that any light emitting array is applied the voltage more than the threshold voltage of light emitting array.Therefore, can prolong the state that any light emitting array in three light emitting arrays is lighted,, suppress flicker simultaneously so can prolong lighting the time of light-emitting device.
Description of drawings
Fig. 1 is the overall structure figure of ligthing paraphernalia that comprises the light-emitting device of the 1st execution mode of the present invention.
Fig. 2 is the circuit diagram that connects power supply ligthing paraphernalia before.
Fig. 3 is the plane graph of summary that constitutes the semiconductor light-emitting elements of light-emitting device.
Fig. 4 is the profile that constitutes the semiconductor light-emitting elements of light-emitting device.
Action specification figure when Fig. 5 is the AC power that has connected 200V on ligthing paraphernalia.
Action specification figure when Fig. 6 is the AC power that has connected 100V on ligthing paraphernalia.
Fig. 7 is the overall structure figure of ligthing paraphernalia of light-emitting device that comprises the 1st mode of texturing of the 1st execution mode.
Fig. 8 is the action specification figure when having connected the AC power of 200V on the ligthing paraphernalia of the 1st mode of texturing.
Fig. 9 is the action specification figure when having connected the AC power of 100V on the ligthing paraphernalia of the 1st mode of texturing.
Figure 10 is the action specification figure when having connected the AC power of 50V on the ligthing paraphernalia of the 1st mode of texturing.
Figure 11 is the overall structure figure of ligthing paraphernalia of light-emitting device that comprises the 2nd mode of texturing of the 1st execution mode.
Figure 12 is the action specification figure when having connected the DC power supply of 200V on the ligthing paraphernalia of the 2nd mode of texturing.
Figure 13 is the action specification figure when having connected the DC power supply of 100V on the ligthing paraphernalia of the 2nd mode of texturing.
Figure 14 is the overall structure figure of the light-emitting device of the 2nd execution mode of the present invention.
Figure 15 is the circuit structure diagram of light-emitting device.
Figure 16 is the graph of a relation between voltage-time of AC power that each light emitting array is supplied with.
Figure 17 is the overall structure figure of light-emitting device of the mode of texturing of the 2nd execution mode.
Figure 18 is the overall structure figure that represents the summary of light-emitting device in the past.
Figure 19 is the figure of the AC power supplied with on the light-emitting device of representing in the past.
Label declaration
1,1A, 1B ligthing paraphernalia
2,2A, 2B switching controls parts
3,3A, 3B light-emitting device
11a, 11b input terminal
12a～12c lead-out terminal
21a, 21b light emitting array
22a～22c voltage input end
23a, 23b semiconductor light-emitting elements
31 substrates
32 semiconductor laminated structures
33 low temperature buffer layers
34 high temperature buffer layers
The 35n type semiconductor layer
The 36MQW active layer
The 37p type semiconductor layer
38 transparency electrodes
39 splitter boxes
40 dielectric films
51a～51d light emitting array
52a～52h voltage input end
61a, 61b light emitting array
62a～62d voltage input end
101 light-emitting devices
121a～121c light emitting array
122a～122c power input terminals
P
200AC power
P
100AC power
P
50AC power
P '
200DC power supply
P '
100DC power supply
The P three-phase alternating-current supply
The Pa AC power
The Pb AC power
The Pc AC power
V
tThreshold voltage
Embodiment
Below, with reference to description of drawings the 1st execution mode of the present invention.Fig. 1 is the overall structure figure of ligthing paraphernalia that comprises the light-emitting device of the 1st execution mode of the present invention.Fig. 2 is the circuit diagram that connects power supply ligthing paraphernalia before.Fig. 3 is the plane graph of summary that constitutes the semiconductor light-emitting elements of light-emitting device.Fig. 4 is the profile that constitutes the semiconductor light-emitting elements of light-emitting device.
As shown in Figure 1, ligthing paraphernalia 1 comprises switching controls parts 2 and light-emitting device 3.
As Fig. 1 and shown in Figure 2, switching controls parts 2 comprise from two input terminal 11a of AC power P input power and 11b and are used for three lead-out terminal 12a, 12b and 12c to light-emitting device 3 out-put supplies.Switching controls parts 2 are constituted as the voltage of supplying with based on from AC power P, can automatically switch being connected of described input terminal 11a and 11b and lead-out terminal 12a～12c, so that the voltage that light emitting array 21a described later and 21b are applied becomes assigned voltage.
As Fig. 1 and shown in Figure 2, light-emitting device 3 is included in two light emitting array 21a forming on the same substrate 31 of the shell (package) that bonds to insulating properties (omitting diagram) and 21b and three the sub-22a of voltage input end, 22b and 22c.And substrate 31 bonds to shell by the adhesives of the resin system of insulating properties.
Each light emitting array 21a and 21b constitute the voltage (assigned voltage) that can tackle 100V.Therefore, under the situation of two light emitting array 21a and 21b that has been connected in series, can tackle the voltage of 200V.
As shown in Figure 1, light emitting array 21a and 21b are included on the same substrate 31 12 semiconductor light-emitting elements (light-emitting diode) 23a and the 23b and the wiring membrane 24 that is used to be connected each semiconductor light-emitting elements 23a and 23b that forms.As Fig. 1 and shown in Figure 2, the pn of 6 semiconductor light-emitting elements 23a and 6 semiconductor light-emitting elements 23b knot is configured to oppositely, so that the flow direction of electric current is opposite.
The p side of semiconductor light-emitting elements 23a is connected to the n side of adjacent semiconductor light-emitting elements 23a by wiring membrane 24, so that 6 semiconductor light-emitting elements 23a are connected in series.In addition, the p side of semiconductor light-emitting elements 23b is connected to the n side of adjacent semiconductor light-emitting elements 23b by wiring membrane 24, so that 6 semiconductor light-emitting elements 23b are connected in series too.That is, 6 semiconductor light-emitting elements 23a are connected in series, so that its flow direction with the electric current of remaining 6 semiconductor light-emitting elements 23b is opposite.
Therefore,, on the opposing party's semiconductor light-emitting elements 23b, be applied in the voltage of forward, so in the opposing party's semiconductor light-emitting elements 23b, flow through electric current even on a side semiconductor light-emitting elements 23a, applied under the state of reverse voltage.On the contrary, be applied under the state of reverse voltage, on a side semiconductor light-emitting elements 23a, be applied in the voltage of forward, so in a side semiconductor light-emitting elements 23b, flow through electric current at the opposing party's semiconductor light-emitting elements 23b.
Promptly, even AC power P is being connected under the situation of this light-emitting device 3, in semiconductor light-emitting elements 23a and 23b, be applied in the voltage of forward among the either party and flow through electric current, so either party's semiconductor light-emitting elements 23a and 23b are lighted all the time.
In addition, be provided with auxiliary wiring film 24a, so that stride across the wiring membrane 24 that one group of semiconductor light-emitting elements 23a and 23b are connected with adjacent one group of semiconductor light-emitting elements 23a and 23b.
Then, with reference to Fig. 3 and Fig. 4, semiconductor light-emitting elements 23a and 23b are described.
The semiconductor laminated structure 32 that semiconductor light-emitting elements 23a and 23b are included in substrate 31 and form on substrate 31.Semiconductor laminated structure 32 from substrate 31 sides begin to have low temperature buffer layer 33 successively, high temperature buffer layer 34, n type semiconductor layer 35, MQW active layer 36, p type semiconductor layer 37 and transparency electrode 38.
Low temperature buffer layer 33 is formed by the GaN layer of the about 0.005 μ m of thickness～about 0.1 μ m.High temperature buffer layer 34 is formed by the GaN layer of the non-doping of the about 1 μ m of thickness～about 3 μ m.This high temperature buffer layer 34 has half insulation, so that with each semiconductor light-emitting elements 23a and 23b insulation.
The about 1 μ m of the thickness of n type semiconductor layer 35～about 5 μ m has contact layer that is formed by the n-GaN layer that has mixed as the Si of n type dopant and the closed layer that is formed by the n-AlGaN layer.The part of MQW active layer 36, p type semiconductor layer 37 and transparency electrode 38 is corroded, so that the part of the contact of n type semiconductor layer 35 (contact) layer is exposed.
MQW active layer 36 is formed by the multiple quantum trap structure of the about 0.05 μ m of thickness～about 0.3 μ m.Specifically, the band gap of MQW active layer 36 (band gap) energy is littler than closed layer, and by the In of the about 1nm of thickness～about 3nm
0.13Ga
0.87The trap layer that N forms and by the GaN layer of the about 10nm of thickness～about 20nm form stop (barrier) layer by lamination 3 groups～8 groups.
The about 0.2 μ m of the thickness of p type semiconductor layer 37～about 1.0 μ m has closed layer that is formed by the p-AlGaN layer and the contact layer that is formed by the p-GaN layer.
Formed the splitter box 39 of the about 0.6 μ m of width～about 5 μ m between adjacent semiconductor light-emitting elements 23a and the 23b, a part and n type semiconductor layer 35, MQW active layer 36, p type semiconductor layer 37 and the transparency electrode 38 of this splitter box 39 by high temperature buffer layer 34 is corroded and forms.In splitter box 39, formed by SiO
2Form and be used for dielectric film 40 adjacent semiconductor light-emitting elements 23a and 23b insulation.
As shown in Figure 4, wiring membrane 24 strides across dielectric film 40 and forms, so that the transparency electrode 38 of semiconductor light-emitting elements 23a and the 23b contact layer with the n type semiconductor layer 35 of adjacent semiconductor light-emitting elements 23a and 23b is connected.Wiring membrane 24 is formed by metal films such as the Au of the about 0.3 μ m of thickness～about 1.0 μ m or Al.
Sub-22a～the 22c of voltage input end is electroplated by Fe-Ni plating or Cu-Ni and constitutes.Sub-22a of voltage input end and 22c are connected to the end of light emitting array 21a and 21b via pad (pad) electrode 25a and 25c.In addition, the sub-22b of voltage input end is connected to the part that the end connected of light emitting array 21a and 21b via pad electrode 25b.And the sub-22a～22c of voltage input end is connected to pad electrode 25a～25c by gold thread or Al line.
And above-mentioned light-emitting device 3 is by known semiconductor manufacture method etc. and manufactured.
Then, with reference to Fig. 2, Fig. 5 and Fig. 6, the action when above-mentioned ligthing paraphernalia 1 is connected to the AC power of the AC power of 200V and 100V is described.Action specification figure when Fig. 5 is the AC power that has connected 200V on ligthing paraphernalia.Action specification figure when Fig. 6 is the AC power that has connected 100V on ligthing paraphernalia.
At first, as shown in Figure 2, before ligthing paraphernalia 1 was connected to power supply, the lead-out terminal 12a～12c of switching controls parts 2 was not connected to input terminal 11a and 11b.
Then, as shown in Figure 5, at the AC power P that ligthing paraphernalia 1 is connected to 200V
200The time, the sub-22a of voltage input end is connected via lead-out terminal 12a with input terminal 11a, and the sub-22c of voltage input end is connected via lead-out terminal 12c with input terminal 11b.And lead-out terminal 12b is not connected, and becomes insulated state.Therefore, light-emitting device 3 becomes, and under the state that light emitting array 21a and 21b are connected in series, its two ends have been applied in the voltage of 200V.Therefore, each light emitting array 21a and 21b are applied the voltage of assigned voltage 100V separately, thereby light-emitting device 3 is normally moved.
On the other hand, as shown in Figure 6, at the AC power P that ligthing paraphernalia 1 is connected to 100V
100The time, sub-22a of voltage input end and 22c are connected to input terminal 11a via lead-out terminal 12a and 12c, and the sub-22b of voltage input end is connected to input terminal 11b via lead-out terminal 12b simultaneously.Thus, light-emitting device 3 becomes the state that light emitting array 21a and 21b are connected in parallel.Therefore, be applied in voltage at the both ends of each light emitting array 21a and 21b, thereby light-emitting device 3 is normally moved as the 100V of assigned voltage.
As mentioned above, in light-emitting device 3 of the present invention, because of three sub-22a～22c of voltage input end being set corresponding to two light emitting array 21a and 21b, so can select to be connected to the sub-22a～22c of voltage input end of AC power P or will to connect between the sub-22a～22c of voltage input end corresponding to the voltage of being supplied with.
Therefore, can be connected in series between light emitting array 21a and the 21b or be connected to AC power P under the state that is connected in parallel making, so can make the voltage that is applied on each light emitting array 21a and the 21b become 100V as the assigned voltage of light emitting array 21a and 21b.Therefore, even different service voltages also can apply identical voltage, thus can suppress heating and puncture because of caused semiconductor light-emitting elements 23a of overvoltage and 23b, and make its action for to send the light of equal illumination.
In ligthing paraphernalia 1 of the present invention, can automatically switch the sub-22a～22c of voltage input end of light-emitting device 3 and the switching controls parts 2 that are connected of AC power P by being provided with, thereby can be based on the voltage that is applied in, sub-22a～the 22c of voltage input end that automatically will be transfused to voltage is connected to AC power P, and will connect between the sub-22a～22c of voltage input end.Therefore, the user can easily be connected to AC power P with ligthing paraphernalia 1 and have nothing to do with service voltage.
Then, with reference to accompanying drawing, the 2nd execution mode of the present invention is described.Figure 14 is the overall structure figure of the light-emitting device of the 2nd execution mode of the present invention.Figure 15 is the circuit structure diagram of light-emitting device.
As Figure 14 and shown in Figure 15, light-emitting device 101 is included in three light emitting array 121a, 121b forming on the same substrate 31 in the shell that bonds to insulating properties (omitting diagram) and 121c and three power input terminals 122a, 122b and 122c.And substrate 31 bonds on the shell by the adhesives of the resinae of insulating properties.
As shown in figure 14, light emitting array 121a～121c is included on the same substrate 31 10 semiconductor light-emitting elements (light-emitting diode) 23a and the 23b and the wiring membrane 24 that is used to be connected each semiconductor light-emitting elements 23a and 23b that forms.As Figure 14 and shown in Figure 15, the pn of 5 semiconductor light-emitting elements 23a and 5 semiconductor light-emitting elements 23b knot is configured to oppositely, so that the flow direction of electric current is opposite.
The p side of semiconductor light-emitting elements 23a is connected to the n side of adjacent semiconductor light-emitting elements 23a by wiring membrane 24, so that 5 semiconductor light-emitting elements 23a are connected in series.In addition, the p side of semiconductor light-emitting elements 23b is connected to the n side of adjacent semiconductor light-emitting elements 23b by wiring membrane 24, so that 5 semiconductor light-emitting elements 23b are connected in series too.That is, 6 semiconductor light-emitting elements 23a are connected in series, so that its flow direction with the electric current of remaining 6 semiconductor light-emitting elements 23b is opposite.
Therefore, even be applied under the state of reverse voltage, be applied in the threshold voltage V of forward at the opposing party's semiconductor light-emitting elements 23b at a side semiconductor light-emitting elements 23a
tUnder the above voltage condition, in the opposing party's semiconductor light-emitting elements 23b, flow through electric current.On the contrary, even be applied under the state of reverse voltage, be applied in the threshold voltage V of forward at a side semiconductor light-emitting elements 23a at the opposing party's semiconductor light-emitting elements 23b
tSituation under, in a side semiconductor light-emitting elements 23b, flow through electric current.
In addition, be provided with auxiliary wiring film 24a, so that stride across the wiring membrane 24 that one group of semiconductor light-emitting elements 23a and 23b are connected with adjacent one group of semiconductor light-emitting elements 23a and 23b.
Then, with reference to Fig. 3 and Fig. 4, semiconductor light-emitting elements 23a and 23b are described.
The semiconductor laminated structure 32 that semiconductor light-emitting elements 23a and 23b comprise substrate 31 and form on substrate 31.Semiconductor laminated structure 32 from substrate 31 sides begin to have low temperature buffer layer 33 successively, high temperature buffer layer 34, n type semiconductor layer 35, MQW active layer 36, p type semiconductor layer 37 and transparency electrode 38.
Low temperature buffer layer 33 is formed by the GaN layer of the about 0.005 μ m of thickness～about 0.1 μ m.High temperature buffer layer 34 is formed by the GaN layer of the non-doping of the about 1 μ m of thickness～about 3 μ m.This high temperature buffer layer 34 has half insulation, so that with each semiconductor light-emitting elements 23a and 23b insulation.
The about 1 μ m of the thickness of n type semiconductor layer 35～about 5 μ m has contact layer that is formed by the n-GaN layer that has mixed as the Si of n type dopant and the closed layer that is formed by the n-AlGaN layer.The part of MQW active layer 36, p type semiconductor layer 37 and transparency electrode 38 is corroded, so that the part of the contact layer of n type semiconductor layer 35 is exposed.
MQW active layer 36 is formed by the multiple quantum trap structure of the about 0.05 μ m of thickness～about 0.3 μ m.Specifically, the band-gap energy of MQW active layer 36 is littler than closed layer, and by the In of the about 1nm of thickness～about 3nm
0.13Ga
0.87Trap layer that N forms and the barrier layer that forms by the GaN layer of the about 10nm of thickness～about 20nm by lamination 3 groups～8 groups.
The about 0.2 μ m of the thickness of p type semiconductor layer 37～about 1.0 μ m has closed layer that is formed by the p-AlGaN layer and the contact layer that is formed by the p-GaN layer.
Formed the splitter box 39 of the about 0.6 μ m of width～about 5 μ m between adjacent semiconductor light-emitting elements 23a and the 23b, a part and n type semiconductor layer 35, MQW active layer 36, p type semiconductor layer 37 and the transparency electrode 38 of this splitter box 39 by high temperature buffer layer 34 is corroded and forms.At splitter box 39, formed by SiO
2Constitute and be used for dielectric film 40 adjacent semiconductor light-emitting elements 23a and 23b insulation.
As shown in Figure 4, wiring membrane 24 strides across dielectric film 40 and forms, so that the transparency electrode 38 of semiconductor light-emitting elements 23a and the 23b contact layer with the n type semiconductor layer 35 of adjacent semiconductor light-emitting elements 23a and 23b is connected.Wiring membrane 24 is formed by metal films such as the Au of the about 0.3 μ m of thickness～about 1.0 μ m or Al.
And described light-emitting device 101 is by known semiconductor manufacture method etc. and manufactured.
Action when then, described light-emitting device 101 being connected to the three-phase alternating-current supply P that motor etc. is supplied with reference to Figure 16 explanation.Figure 16 is the graph of a relation between voltage-time of the AC power supplied with on each light emitting array.
In addition, AC power Pa shown in Figure 16 (a) is the AC power of being supplied with on the light emitting array 121a, AC power Pb shown in Figure 16 (b) is the power of being supplied with on the light emitting array 121b, and the AC power Pc shown in Figure 16 (c) is the power of being supplied with on the light emitting array 121c.Here, shown in Figure 16 (a)～16 (c), the AC power Pa～Pc that is supplied with on each light emitting array 121a～121c, phase place differ respectively period T 1/3 and be fed into each light emitting array 121a～121c.In addition, V
tAnd-V
tBe semiconductor light-emitting elements 23a and the luminous required threshold voltage of 23b that is used to make each light emitting array 121a～121c.
At first, shown in Figure 16 (a), as if the t time of advent
A1, then the voltage of being supplied with on the light emitting array 121a is V
tMore than, so light emitting array 121a lights.Then, shown in Figure 16 (c), as if the t time of advent
C1, then the voltage of being supplied with on the light emitting array 121c becomes-V
tBelow, so light emitting array 121c lights.Therefore, time t
C1Afterwards, two of light emitting array 121a and 121c light.
Then, shown in Figure 16 (a), as if the t time of advent
A2, then the voltage of being supplied with on the light emitting array 121a is V
tBelow, so light emitting array 121a extinguishes.But light emitting array 121c continues illuminating state, so light-emitting device 101 does not extinguish.
Then, shown in Figure 16 (b), as if the t time of advent
B1, then the voltage of being supplied with on the light emitting array 121b is V
tMore than, so light emitting array 121b lights.Here, light emitting array 121c continues illuminating state, so at time t
B1Afterwards, two of light emitting array 121b and 121c light.
Then, shown in Figure 16 (c), as if the t time of advent
C2, then the voltage of being supplied with on the light emitting array 121c is-V
tMore than, so light emitting array 121c extinguishes.But light emitting array 121b continues illuminating state, so light-emitting device 101 does not extinguish.
Also repeat the action of above explanation afterwards, so in three light emitting array 121a～121c, have any or two light emitting array 121a～121c to light all the time.
As mentioned above, light-emitting device 101 of the present invention is provided with three light emitting array 121a～121c and three power input terminals 122a～122c that are used for the end of each light emitting array 121a～121c is connected respectively three-phase alternating-current supply P, thereby can supply with three different power of phase place to each light emitting array 121a～121c.Thus, can supply with absolute value all the time at threshold voltage V to any or two the light emitting array 121a～121c among light emitting array 121a～121c
tAbove voltage.
Therefore, can light any or two light emitting array 121a～121c among light emitting array 121a～121c all the time, so light-emitting device 101 can be remained illuminating state.Thus, can also suppress the flicker etc. of light-emitting device 101.
More than, use above-mentioned execution mode to describe the present invention in detail, but it should be appreciated by those skilled in the art, the execution mode that the present invention is not limited to illustrate in this manual.The present invention can be used as and revises and mode of texturing is implemented and do not broken away from aim of the present invention and scope that record determined by the claim scope.Therefore, the record of this specification just is purpose not have the implication of the present invention being carried out any restriction in order to illustrate.Below, the mode of texturing with the part change of above-mentioned execution mode is described.
For example in above-mentioned the 1st execution mode, light-emitting device 3 is included in the ligthing paraphernalia 1, but also can be with light-emitting device 3 as independent device.
In addition, in above-mentioned the 1st execution mode, when having connected the AC power of 100V, also can light two light emitting array 21a and 21b, but also can constitute, when having connected the AC power of 100V, light any light emitting array 21a and 21b.At this moment, the structure that any and the sub-22b of voltage input end of sub-22a of voltage input end and 22c is connected to the AC power of 100V gets final product.
In above-mentioned the 1st execution mode, in light-emitting device 3, be provided with two light emitting array 21a and 21b, but also can light emitting array more than three be set at light-emitting device.The 1st mode of texturing for example shown in Figure 7 is such, also four light emitting array 51a, 51b, 51c, 51d can be set in light-emitting device 3A.In each end of each light emitting array 51a～51d, the sub-52a of voltage input end, 52b, 52c, 52d, 52e, 52f, 52g, 52h are connected two at every turn.
Then, with reference to Fig. 8～Figure 10, the action of ligthing paraphernalia 1A when assigned voltage with each light emitting array 51a～51d is made as 50V, that have above-mentioned light-emitting device 3A is described.Have again, ligthing paraphernalia 1A comprises switching controls parts 2A, and these switching controls parts 2A has corresponding to lead-out terminal 53a, 53b, 53c, 53d, 53e, 53f, 53g, the 53h of the sub-52a～52h of voltage input end and is transfused to input terminal 54a, the 54b of AC power.
As shown in Figure 8, the AC power P that on ligthing paraphernalia 1A, has connected 200V
200The time, switching controls parts 2A connects the sub-52b of voltage input end and 52c, the sub-52d of voltage input end and 52e, the sub-52f of voltage input end and 52g, thereby four light emitting array 51a～51d are connected in series.Under this state, by sub-52a of voltage input end and the sub-52h of voltage input end are connected to AC power P via input terminal 54a and input terminal 54b
200Thereby, in each light emitting array 51a～51d, be applied in voltage, so it is normally moved as the 50V of assigned voltage.
Then, as shown in Figure 9, on ligthing paraphernalia 1A, connected the AC power P of 100V
100The time, switching controls parts 2A connects sub-52b of voltage input end and 52c respectively, thus light emitting array 51a and 51b are connected in series, and simultaneously by connection sub-52f of voltage input end and 52g, thereby light emitting array 51c and 51d are connected in series.And then, connect sub-52a of voltage input end and 52e, connect sub-52d of voltage input end and 52h simultaneously, thereby the light emitting array 51a that is connected in series and 51b and light emitting array 51c and 51d are connected in parallel.
Under this state, by the sub-52a of voltage input end and 52e and the sub-52d of voltage input end and 52h are connected to AC power P via input terminal 54a and input terminal 54b
100Thereby, in each light emitting array 51a～51d, be applied in voltage, so it is normally moved as the 50V of assigned voltage.
Then, as shown in figure 10, on ligthing paraphernalia 1A, connected the AC power P of 50V
50The time, switching controls parts 2A connects the sub-52a of voltage input end, 52c, 52e and 52g, connects the sub-52b of voltage input end, 52d, 52f and 52h simultaneously, thereby all light emitting array 51a～51d are connected in parallel.
Under this state, by the sub-52a of voltage input end, 52c, 52e and 52g and the sub-52b of voltage input end, 52d, 52f and 52h are connected to AC power P via input terminal 54a and input terminal 54b
50Thereby, in each light emitting array 51a～51d, be applied in voltage, so it is normally moved as the 50V of assigned voltage.
In addition, in above-mentioned the 1st execution mode, the ligthing paraphernalia 1 and the light-emitting device 3 that are connected AC power have been described, but also the present invention can be applicable in the ligthing paraphernalia and light-emitting device that is connected DC power supply.For example in the light-emitting device 3B of the 2nd alter mode shown in Figure 11, connect the semiconductor light-emitting elements 23a of each light emitting array 61a and 61b, so that all flow through electric current by identical direction.Two ends at each light emitting array 61a and 61b are provided with the sub-62a of voltage input end, 62b, 62c, 62d.Therefore, sub-62a～62d is connected DC power supply at voltage input end, so that direction in accordance with regulations flows through electric current to sub-61a of voltage input end and 61b.
The action of ligthing paraphernalia 1B when assigned voltage with each light emitting array 61a and 61b is made as 100V, that have above-mentioned light-emitting device 3B then, is described.Have, ligthing paraphernalia 1B comprises switching controls parts 2B again, and these switching controls parts 2B has the DC power supply of being connected P '
200And P '
100 Input terminal 63a and 63b and be connected lead-out terminal 64a, 64b, 64c, the 64d of the sub-62a～62d of voltage input end.
As shown in figure 12, the DC power supply P ' that has connected 200V at ligthing paraphernalia 1B
200The time, switching controls parts 2B connects sub-62b of voltage input end and 62c, thereby light emitting array 61a and 61b are connected in series.Under this state, sub-62a of voltage input end and 62d are connected to DC power supply P ' by switching controls parts 2B
200Thereby, in each light emitting array 61a and 61b, be applied in voltage, so it is normally moved as the 100V of assigned voltage.
In addition, as shown in figure 13, on ligthing paraphernalia 1B, connected the AC power P ' of 100V
100The time, switching controls parts 2B connects sub-62a of voltage input end and 62c, connects sub-62b of voltage input end and 62d simultaneously, thereby light emitting array 61a and 61b are connected in parallel.Under this state, the sub-62a of voltage input end and 62c and the sub-62d of voltage input end and 62b are connected to DC power supply P ' by switching controls parts 2B
100Thereby, in each light emitting array 61a and 61b, be applied in voltage, so it is normally moved as the 100V of assigned voltage.
In addition, the quantity of the quantity of light emitting array and voltage input end is, for sub the getting final product of the individual above voltage input end of n (n 〉=2) light emitting array formation (n+1), is not to be defined in above-mentioned the 1st execution mode especially.
In addition, the structure of semiconductor light-emitting elements 23a shown in above-mentioned the 1st execution mode and 23b with and quantity be an example, can suitably change corresponding to the service voltage of expectation etc.
In addition, in above-mentioned the 1st execution mode, switch with 100V and 200V, but so long as can make all light emitting arrays luminous, other magnitudes of voltage that also can be between 100V～200V for example switch with 110V.
In addition, in above-mentioned the 2nd execution mode, the other end that constitutes each light emitting array 121a, 121b and 121c is connected respectively to power input terminals 122b, 122c and 122a, but also can constitute as shown in Figure 17.Specifically, the other end of each light emitting array 121a～12c connects by auxiliary wiring film 24b mutually, and the mid portion at auxiliary wiring film 24b forms pad electrode 25d simultaneously.And pad electrode 25d is connected to the earth terminal 22d that is grounded via gold thread or Al line.Thus, the other end of each light emitting array 121a～121c is via earth terminal 22d ground connection.
In addition, the structure of semiconductor light-emitting elements 23a shown in above-mentioned the 2nd execution mode and 23b with and quantity be an example, can suitably change corresponding to the service voltage of expectation etc.
In above-mentioned the 2nd execution mode, set threshold voltage V
tSo that light-emitting device 101 lights all the time, but also can set threshold voltage V
tSo that light-emitting device 101 temporarily extinguishes.
Claims (10)
1. a light-emitting device is characterized in that, comprising:
Have the one or more semiconductor light-emitting elements that on same substrate, form, and n identical light emitting array of assigned voltage, wherein, n 〉=2; And
Corresponding to the end of described each light emitting array set (n+1) at least individual above voltage input end,
Described voltage input end can switch to described each light emitting array and be connected in series and be connected in parallel, so that described each light emitting array is applied assigned voltage.
2. light-emitting device as claimed in claim 1 is characterized in that,
Described each light emitting array has the described semiconductor light-emitting elements of equal number.
3. as each described light-emitting device of claim 1 or 2, it is characterized in that,
Described light emitting array has 2m described semiconductor light-emitting elements,
M described semiconductor light-emitting elements is connected, so that its sense of current and the current opposite in direction that flows through remaining m described semiconductor light-emitting elements.
4. as each described light-emitting device of claim 1 to 3, it is characterized in that,
Described light emitting array is set to two,
Described voltage input end is set to three.
5. a ligthing paraphernalia is characterized in that, comprising:
Light-emitting device, it comprises having the one or more semiconductor light-emitting elements that form on same substrate, and n light emitting array that assigned voltage is identical and corresponding to the end of described each light emitting array set (n+1) at least individual above voltage input end, wherein, n 〉=2; And
The switching controls parts are used to switch described voltage input end,
Described switching controls parts are according to the voltage that is applied on the described light-emitting device, described light emitting array is connected in series or is connected in parallel, automatically switch described voltage input end that is transfused to voltage simultaneously, so that the voltage that is applied on described each light emitting array becomes assigned voltage.
6. a light-emitting device is characterized in that, comprising:
Three light emitting arrays with the one or more semiconductor light-emitting elements that on same substrate, form; And
Be arranged on an end of described each light emitting array, and be supplied to three power input terminals of three-phase alternating-current supply,
In described each power input terminals, be supplied to three AC power that phase place is different respectively.
7. light-emitting device as claimed in claim 6 is characterized in that,
Other ends of described three light emitting arrays are electrically connected mutually and are grounded.
8. as each described light-emitting device of claim 6 or 7, it is characterized in that,
Among described three light emitting arrays at least in any, be supplied to and be used to light the above voltage of the required threshold voltage of described light emitting array.
9. as each described light-emitting device of claim 6 to 8, it is characterized in that,
Described light emitting array has 2m described semiconductor light-emitting elements,
M described semiconductor light-emitting elements is connected, so that its sense of current and the current opposite in direction that flows through remaining m described semiconductor light-emitting elements.
10. as each described light-emitting device of claim 6 to 9, it is characterized in that,
Described each light emitting array has the described semiconductor light-emitting elements of equal number.
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|---|---|---|---|
| JP369551/2005 | 2005-12-22 | ||
| JP2005369551A JP2007173548A (en) | 2005-12-22 | 2005-12-22 | Light-emitting device and luminaire |
| JP369561/2005 | 2005-12-22 |
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| CN101346826A true CN101346826A (en) | 2009-01-14 |
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| CN (1) | CN101346826A (en) |
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