KR101761854B1 - Led module - Google Patents

Led module Download PDF

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Publication number
KR101761854B1
KR101761854B1 KR1020110005769A KR20110005769A KR101761854B1 KR 101761854 B1 KR101761854 B1 KR 101761854B1 KR 1020110005769 A KR1020110005769 A KR 1020110005769A KR 20110005769 A KR20110005769 A KR 20110005769A KR 101761854 B1 KR101761854 B1 KR 101761854B1
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KR
South Korea
Prior art keywords
light emitting
emitting diode
wiring
chip module
switch
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Application number
KR1020110005769A
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Korean (ko)
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KR20120084417A (en
Inventor
이상준
Original Assignee
서울반도체 주식회사
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Priority to KR1020110005769A priority Critical patent/KR101761854B1/en
Publication of KR20120084417A publication Critical patent/KR20120084417A/en
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Publication of KR101761854B1 publication Critical patent/KR101761854B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Abstract

A light emitting diode module and a light emitting diode lighting apparatus are disclosed. The module includes a substrate having a reflective surface, a first pad and a second pad overlying the substrate, a first and a second wiring extending from the respective pad, a first and a second pad, a first and a second pad, An insulating layer for insulating the wiring from the substrate, and a plurality of light emitting diode chips mounted on the substrate. Each of the light emitting diode chips includes a plurality of light emitting cells connected in series on a single substrate. The size of the light emitting diode module can be reduced by mounting the light emitting diode chips connected in series with the plurality of light emitting cells directly on the substrate, and the heat dissipation characteristics can be improved.

Description

Light emitting diode module {LED MODULE}

The present invention relates to a light emitting diode module, and more particularly, to a high output light emitting diode module.

A light emitting diode lighting device has been used instead of a conventional fluorescent lamp or incandescent lamp. A light emitting diode lighting apparatus generally includes a light emitting diode module in which a plurality of light emitting diode packages are mounted on a metal printed circuit board, which light emitting diode module is assembled on a heat sink in the lighting apparatus. The metal printed circuit board uses a white solder resist to reflect the light emitted from the light emitting diode package. Further, Ag plating is performed on the white solder resist to improve the reflectance.

Meanwhile, the light emitting diode package is completed by mounting a light emitting diode chip on a ceramic, a printed circuit board or a lead frame, and sealing the same with an encapsulating material. By mounting the plurality of light emitting diode packages on the metal printed circuit board, the light emitting diode module can realize high output.

However, the conventional light emitting diode module is manufactured in accordance with the supply power in the production stage. Therefore, a light emitting diode module manufactured for a 110V commercial power source can not be used for a 220V commercial power source without using a separate voltage converter. Similarly, a light emitting diode module manufactured for a 220V commercial power source can be used without a separate voltage converter There is a problem that it can not be used for a 110V commercial power source.

An object of the present invention is to provide a light emitting diode module capable of using a plurality of power supplies without using a separate voltage converter.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a substrate; A first pad and a second pad located on the substrate; A first light emitting diode chip module including a plurality of light emitting diode chips formed on the substrate; A second light emitting diode chip module including a plurality of light emitting diode chips formed on the substrate; And at least one switch for electrically connecting the first light emitting diode chip module and the second light emitting diode chip module electrically in parallel or in series between the first pad and the second pad by a switching operation, The diode chip is provided with a plurality of light emitting cells connected in series to each other on a single substrate.

Wherein the at least one switch switches the first light emitting diode chip module and the second light emitting diode chip module to be connected in parallel when the voltage applied to both ends of the first pad and the second pad is 110V, 220V, the first light emitting diode chip module and the second light emitting diode chip module may be switched to be connected in series.

Wherein the at least one switch comprises: a first switch for electrically switching the anode terminal of the first light emitting diode chip module and the cathode terminal of the second light emitting diode chip module; A second switch for electrically switching a positive terminal of the first light emitting diode chip module and a negative terminal of the second light emitting diode chip module; And a third switch for electrically switching the anode terminal of the first light emitting diode chip module and the cathode terminal of the second light emitting diode chip module.

Wherein the light emitting diode module comprises: a first wiring extending to the first pad; A second wiring extending to the second pad; And a third wiring, a fourth wiring, and a fifth wiring, wherein the third wiring is connected to the first light emitting diode chip module and the fourth wiring, and the operation of the third switch causes the first Electrically connecting the wiring and the fourth wiring; The fourth wiring is connected to the third wiring and is electrically connected to the fifth wiring by operation of the second switch; The fifth wiring may be connected to the second switch and may be connected to the second LED chip module.

Wherein when the first light emitting diode chip module and the second light emitting diode chip module are connected in parallel, the first switch and the third switch are set to the closed state, the second switch is set to the open state, 1 light emitting diode chip module and the second light emitting diode chip module, the first switch and the third switch are set to the open state, and the second switch is set to the closed state.

Wherein the light emitting diode module comprises: a dam surrounding the plurality of light emitting diode chips on the substrate; And a molding unit for filling the space inside the dam to seal the plurality of light emitting diode chips.

The substrate surface may include at least one closed region surrounded by a covering region covered with an insulating layer or a covering region covered by the insulating layer and the dam, and at least two light emitting diode chips may be mounted on one closed region.

According to the present invention, a switch is provided in the light emitting diode module so that the first light emitting diode chip module and the second light emitting diode chip module can be electrically connected in parallel or in series between the first pad and the second pad by a switching operation It is possible to use a plurality of power sources such as 110V or 220V without using a separate voltage converter by operating a switch provided in the light emitting diode module according to the present invention.

1 is a plan view illustrating a light emitting diode module according to an embodiment of the present invention.
2 is a cross-sectional view taken along the perforated line AA of FIG.
3 (b) is a schematic view for explaining a light emitting diode chip having light emitting cells connected in series, and FIG. 3 (c) is a schematic view illustrating a light emitting diode Fig.
4 is a diagram illustrating a switch operation when operating at 110 V according to an embodiment of the present invention.
5 is an equivalent circuit diagram of the switch operation according to FIG.
6 is a diagram illustrating a switch operation when operating at 220 V according to another embodiment of the present invention.
7 is an equivalent circuit diagram of the switch operation according to FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

FIG. 1 is a plan view for explaining a light emitting diode module 100 according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along a perforated line A-A of FIG.

1 and 2, the light emitting diode module 100 includes a substrate 110, an insulating layer 111, a first pad 113, a second pad 115, a first wiring 113a, A plurality of light emitting diode chips 20a, 20b, 20c, 20d, a first switch 140, a second wiring 115a, a third wiring 112, a fourth wiring 114, A second switch 150, and a third switch 160. [ Further, the light emitting diode module 100 may include a dam 119, an adhesive 121, bonding wires 123, and a molding part 125.

The substrate 110 has a reflective surface on its surface. The substrate 110 may be a single-piece substrate and may be an aluminum substrate, but is not limited thereto, and may be a substrate having an aluminum layer formed on another metal substrate as a reflective layer. In addition, the substrate 110 may be provided with a fastening hole for mounting the light emitting diode module 100 in the heat sink and a groove for mounting the reflector. These fastening holes and grooves can be formed by drilling.

The first pad 113, the second pad 115, the first wiring 113a, the second wiring 115a, the third wiring 112, the fourth wiring 114, and the fifth wiring 116 And is located above the substrate 110. These may be formed, for example, of a layer of Ni / Pd / Au. The first and second pads 113 and 115 may be solder pads for connecting the light emitting diode module 100 to an external circuit. The first wiring 113a is connected to the first pad 113 and the second wiring 115a is connected to the second pad 115. The first and second wirings 113a and 115a have bonding areas for bonding wires. The third wiring 112 is connected to the first LED chip module 120 and the fourth wiring 114 and the first wiring 113a and the fourth wiring 114 ) To be electrically connected to each other. The fourth wiring 114 is connected to the third wiring 112 and is electrically connected to the fifth wiring 116 by the operation of the second switch 150. The fifth wiring 116 is connected to the second switch 150 and is connected to the second LED chip module 130 by a bonding wire.

The first switch 140, the second switch 150, and the third switch 160 can be used for 5A, 250V AC, for example, as a push switch. In this case, three switches are used in accordance with the use of the switches of the A and B contacts. However, in the case of using multi-contact switches, the number and the wiring method can be modified in any way.

The first switch 140, the second switch 150 and the third switch 160 form pad patterns 140a, 150a and 160a for the submount on the substrate 110 and the pad patterns 140a, 150a, 160a using a metal mask or a silk screen, and then mounting the solder cream on the solder cream, followed by submounting by reflowing at, for example, 260 degrees. The surfaces of the pad patterns 140a, 150a, and 160a may be plated with gold (Au).

The first switch 140 has a fifth wire 116 connected to the A contact and a second wire 115a connected to the B contact. The fifth wiring 116 is electrically connected to the negative terminal of the second LED chip module 130 by a bonding wire. Meanwhile, the second wiring 115a is connected to the negative terminal of the first LED module 120 and the second pad 115, which is a negative electrode pad. Accordingly, the first switch 140 electrically connects (closes) or cuts off (disconnects) the negative terminal of the first LED module 120 and the negative terminal of the second LED module 120 ) Can be performed.

The second switch 150 has the fifth wire 116 connected to the A contact and the fourth wire 114 connected to the B contact. The fourth wiring 114 is electrically connected to the positive terminal of the first LED chip module 120 through the third wiring 112. On the other hand, the fifth wiring 116 is electrically connected to the negative terminal of the second LED chip module 130 by a bonding wire. Accordingly, the second switch 150 electrically connects (closes) or blocks (disconnects) the positive terminal of the first LED module 120 and the negative terminal of the second LED module 130 ) Can be performed.

The third switch 160 has the third wiring 112 connected to the A contact and the first wiring 113a connected to the B contact. The third wiring 112 is electrically connected to the positive terminal of the first light emitting diode chip module 120 by a bonding wire and the first wiring 113a is electrically connected to the positive terminal of the second light emitting diode chip module 130 And a first pad 113, which is a positive electrode pad. Accordingly, the third switch 160 electrically connects (closes) or disconnects the positive terminal of the first light emitting diode chip module 120 and the positive terminal of the second light emitting diode chip module 130 ) Can be performed.

The insulating layer 111 is electrically connected to the first and second pads 113 and 115, the first wiring 113a, the second wiring 115a, the third wiring 112, the fourth wiring 114, So that the wiring 116 is insulated from the substrate 110. In addition, the insulating layer 111 may cover the surface of the substrate 110 to divide the coated region and the exposed region. That is, the surface of the substrate 110 may be divided into a covered region covered with the insulating layer 111 and an exposed region exposed through the insulating layer 111 to the outside. Further, the exposed region may be surrounded by a covering region, so that a closed region may be formed. A plurality of such closed regions may be formed. As shown in the figure, the first wiring 113a, the second wiring 115a, the third wiring 112, the fourth wiring 114, 5 wiring 116 may be disposed.

The plurality of light emitting diode chips 20 are mounted on the surface of the substrate 110 through the adhesive 121. In particular, the plurality of light emitting diode chips 20 may be mounted on the closed region, and at least two light emitting diode chips 20 may be mounted on one closed region. Each light emitting diode chip 20 has a plurality of light emitting cells connected in series on a single substrate, for example, about 16 to 18 light emitting cells. The light emitting diode chip will be described later in detail with reference to FIG. On the other hand, in the figure, two closed regions are partitioned by an insulating layer 111, and a total of six LED chips 20 are mounted on the regions. The closed region is relatively wider than the light emitting diode chip 20, and thus functions to reflect the light emitted from the light emitting diode chip 20.

The bonding wires 123 connect the light emitting diode chips 20 between the first wiring 113a and the second wiring 115a. The bonding wires 123 connect bonding wires for connecting the light emitting diode chips 20 to each other, bonding wires for connecting the light emitting diode chip 20 and the first wires 113a, light emitting diode chips 20, 115a, respectively.

1 and 2 show an example in which a plurality of light emitting diode chips 20 are connected between a first pad 113 and a second pad 115 by using bonding wires 123. 2, the light emitting diode chip 20a is connected to the first wiring 113a and the light emitting diode chip 20b, and the light emitting diode chip 20b is again connected to the fifth And is connected to the wiring 116. Thus, the light emitting diode chips 20a and 20b are connected in series between the first wiring 113a and the sixth wiring 116. [ Meanwhile, the light emitting diode chip 20d is connected to the second wiring 115a and the light emitting diode chip 20c, and the light emitting diode chip 20c is connected to the third wiring 112 located between the closed regions . Thus, the light emitting diode chips 20c and 20d are connected in series between the second wiring 115a and the third wiring 112. The first switch 140, the second switch 150, and the second switch 150 are connected in a state where the plurality of light emitting diode chips 20 are connected by the bonding wires between the first pad 113 and the second pad 115, A light emitting diode module which can be selectively driven at 110 V or 220 V according to the operation of the third switch 160 may be provided.

The dam 119 surrounds the plurality of light emitting diode chips 20 on the substrate 110. The dam 119 may be formed on the insulating layer 111. The dam 119 may be formed of silicon, for example, and prevents the molding part 125 from spreading widely when the molding part 125 is formed.

Most of the surface area of the substrate 110 inside the dam 119 becomes an exposed region not covered with the insulating layer 111. [ The size of such an exposure region can be, for example, 50% or more with respect to the surface area of the substrate 110 inside the dam 119. On the other hand, the closed region described above may be defined by the dam 119 and the insulating layer 111.

The molding part 125 fills the space inside the dam 119 to cover the light emitting diode chips 20. The molding part 125 may contain a phosphor and may have a convex shape to perform a lens function. The molding part 125 may be formed of the same material as the dam 119, for example, silicon.

3 (a) is a cross-sectional view for explaining the light emitting diode chip 20, FIG. 3 (b) is a schematic view for explaining a light emitting diode chip 20 having light emitting cells connected in series, Is a schematic view for explaining a light emitting diode chip capable of AC driving.

3 (a), the light emitting diode chip 20 includes a substrate 21, a plurality of light emitting cells 30, and wirings 35 electrically connecting the light emitting cells 30, A buffer layer 23, a transparent conductive layer 31, a first insulating layer 33, a second insulating layer 35, a distributed Bragg reflector 45, and a metal layer 47.

The substrate 21 may be a growth substrate for growing a gallium nitride-based semiconductor layer such as sapphire, silicon carbide, or a silicon substrate. Each light emitting cell 30 includes a first conductive semiconductor layer 25, an active layer 27, and a second conductive semiconductor layer 29. These semiconductor layers 29 may be formed of a gallium nitride compound semiconductor. On the other hand, the transparent conductive layer 31 is located on the second conductivity type semiconductor layer 29 and can make ohmic contact with the second conductivity type semiconductor layer 29. The wiring 35 electrically connects the first conductivity type semiconductor layer 25 of one light emitting cell 30 to the second conductivity type semiconductor layer 29 of another light emitting cell 30 adjacent thereto. An array in which a plurality of light emitting cells 30 are connected in series between the electrode pads 51 and 53 on a single substrate 21 can be formed by the wirings 35 as shown in FIG. have. In addition, as shown in Fig. 3 (c), the LED array 20 may be provided in which the series arrays are connected in antiparallel with each other between the electrode pads 51 and 53 so as to be driven by AC power. Further, the light emitting cells 30 can be connected by using the wirings 35 to form a bridge rectifier (not shown), and a light emitting diode chip capable of AC driving by connecting a serial array to the bridge rectifier is provided .

In order to prevent the first conductive type semiconductor layer 25 and the second conductive type semiconductor layer 29 from being short-circuited by the wiring 35, the first insulating layer 33 is electrically connected to the light- 35). The second insulating layer 37 may cover the light emitting cells 30 and the wirings 35 to protect the light emitting cells 30 and the wirings 35. The second insulating layer 37 may cover the light emitting cells 30 and the wirings 35, Thereby covering the first insulating layer 33. The first insulating layer 33 and the second insulating layer 37 may be formed of the same material, for example, a silicon oxide film or a silicon nitride film, and may be formed as a single layer. In this case, in order to prevent the second insulating layer 37 from being peeled off from the first insulating layer 33, the second insulating layer 37 may be relatively thinner than the first insulating layer 33 .

On the other hand, the lower distributed Bragg reflector 45 may be positioned below the substrate 21. [ The lower distributed Bragg reflector 45 is formed by alternately laminating insulating layers having different refractive indexes, and is formed of light in the blue wavelength region, for example, light generated in the active layer 27 as well as light in the yellow wavelength region and / Or in the red wavelength region, and preferably has a reflectance of 90% or more. Further, the lower distribution Bragg reflector 45 may have a reflectance of 90% or more as a whole over a wavelength range of 400 to 700 nm, for example.

A lower distributed Bragg reflector 45 having a relatively high reflectance over a wide wavelength region is formed by controlling the respective optical thicknesses of the repeated stacked material layers. The lower distributed Bragg reflector 45 may be formed, for example, by alternately laminating a first layer of SiO 2 and a second layer of TiO 2 , or alternatively by alternating between a first layer of SiO 2 and a second layer of Nb 2 O 5 And may be formed by laminating. It is more preferable to alternately laminate the first layer of SiO 2 and the second layer of Nb 2 O 5 because the light absorptance of Nb 2 O 5 is relatively smaller than that of TiO 2 . As the number of layers in the first layer and the second layer increases, the reflectance of the distributed Bragg reflector 45 is more stable. For example, the number of layers of the distributed Bragg reflector 40 may be 50 or more, that is, 25 or more.

It is not necessary that the first layers or the second layers alternately stacked have the same thickness and the first layers and the second layers are formed so as to have a relatively high reflectance for the wavelengths of light generated in the active layer 27 as well as for other wavelengths in the visible region The thickness of the two layers is selected. In addition, a plurality of distributed Bragg reflectors having a high reflectance for a specific wavelength band may be laminated to form the lower distributed Bragg reflector 45.

By adopting the lower distribution Bragg reflector 45, when the light converted in the wavelength conversion layer 50 is incident on the substrate 21 again, the incident light can be reflected again and emitted to the outside, The efficiency can be improved.

Also, a metal layer 47 may be located below the bottom distributed Bragg reflector 45. The metal layer 47 may be formed of a reflective metal such as aluminum to reflect light transmitted through the lower distributed Bragg reflector 45, but may be formed of a metal other than the reflective metal. Furthermore, the metal layer 47 helps to release the heat generated in the laminated structure 30 to the outside, and improves the heat dissipation performance of the light emitting diode chip 102.

According to the present invention, it is possible to provide a light emitting diode module 100 that can be driven at a high voltage with a small number of light emitting diode chips while having a small size by using a light emitting diode chip having a plurality of light emitting cells connected in series.

4 is a diagram illustrating a switch operation when operating at 110 V according to an embodiment of the present invention. 4, the first switch 140 and the third switch 160 are set to a closed state and the second switch 150 is turned on to operate the light emitting diode module 100 at a 110 V power supply. Is set to the open state (open).

The first switch 140 is in a closed state to electrically connect the A contact and the B contact. The third switch 160 is also closed to electrically connect the A contact and the B contact. On the other hand, the second switch 150 is in the open state, and the A contact and the B contact are electrically disconnected.

As the first switch 140 is closed, the second wiring 115a and the fifth wiring 116 are electrically connected. The fifth wiring 116 is electrically connected to the second LED chip module 130 by a bonding wire.

As the third switch 160 is closed, the first wiring 113a and the third wiring 112 are electrically connected. The third wiring 112 is electrically connected to the first light emitting diode chip module 120 by a bonding wire. The first wiring 113a is connected to the first pad 113 and the second wiring 115a is connected to the second pad 115. [

On the other hand, as the second switch 150 is opened, the fourth wiring 114 and the fifth wiring 116 are electrically disconnected. The fourth wiring 114 is electrically connected to the first LED chip module 120 through the third wiring 112. On the other hand, the fifth wiring 116 is electrically connected to the second LED chip module 130 by a bonding wire.

Accordingly, the first light emitting diode chip module 120 and the second light emitting diode chip module 130 are parallel to each other between the first pad 113 and the second pad 115. Accordingly, both ends of the first light emitting diode chip module 120 and the second light emitting diode chip module 130 are operated with a supply voltage of 110 V, respectively.

5 is an equivalent circuit diagram of the switch operation according to FIG.

Here, the light emitting diode chip 20 has a single array in which a plurality of light emitting cells are connected in series, as shown in FIG. 3 (b). Therefore, two light emitting diode chips 20 are connected in series between the first pad 113 and the second pad 115, and the first light emitting diode chip module 120 and the second light emitting diode chip module 130 As they are connected in parallel, the six pairs are connected in parallel. The light emitting diode chips 20 are connected in series between the first wiring 113a and the second wiring 115a through the bonding wire 123 as shown in FIG. For example, a light emitting diode module 100 capable of being driven at 110 V can be provided by serially connecting two light emitting diode chips having about sixteen light emitting cells connected in series.

6 is a diagram illustrating a switch operation when operating at 220 V according to another embodiment of the present invention.

6, the first switch 140 and the third switch 160 are set to an open state and the second switch 150 is turned on to operate the light emitting diode module 100 at a 220 V supply voltage. Is set to the closed state (close).

The first switch 140 is opened and electrically disconnects the A contact and the B contact. The third switch 160 is also in the open state to electrically disconnect the A contact and the B contact. On the other hand, the second switch 150 is in the closed state, and the A contact and the B contact are electrically connected.

As the first switch 140 is opened, the second wiring 115a and the fifth wiring 116 are electrically disconnected. The fifth wiring 116 is electrically connected to the second LED chip module 130 by a bonding wire.

As the third switch 160 is opened, the first wiring 113a and the third wiring 112 are electrically disconnected. The third wiring 112 is electrically connected to the first light emitting diode chip module 120 by a bonding wire. The first wiring 113a is connected to the first pad 113 and the second wiring 115a is connected to the second pad 115. [

On the other hand, as the second switch 150 is closed, the fourth wiring 114 and the fifth wiring 116 are electrically connected. The fourth wiring 114 is electrically connected to the first LED chip module 120 through the third wiring 112. On the other hand, the fifth wiring 116 is electrically connected to the second LED chip module 130 by a bonding wire.

Accordingly, the first LED chip module 120 and the second LED chip module 130 are connected in series between the first pad 113 and the second pad 115. Accordingly, both ends of the first light emitting diode chip module 120 and the second light emitting diode chip module 130 are operated with a supply voltage of 220V. A voltage of 220 V is applied to the first LED module 120 and the second LED module 130 by 110 V by voltage division.

7 is an equivalent circuit diagram of the switch operation according to FIG.

Referring to FIG. 7, four light emitting diode chips 20 are connected in series between a first pad 113 and a second pad 115. In this connection, the light emitting diode chip 20b and the light emitting diode chip 20c in FIG. 2 are connected to the fourth wiring 114, the second switch 150, and the fifth wiring 150, which are located between the closed regions of the substrate 110, (Not shown). The first light emitting diode chip module 120 and the second light emitting diode chip module 130 can be connected in series through this connection. Accordingly, a light emitting diode module that can be driven at 220V can be provided.

The light emitting diode module 100 can be assembled directly on a heat sink (not shown) without interposing another printed circuit board in between. For example, the substrate 110 of the light emitting diode module 100 may be in contact with the upper surface of the heat sink. In this case, although not shown, a thermal pad may be interposed between the light emitting diode module 100 and the heat sink.

On the other hand, a driving circuit unit (not shown) may be disposed around the light emitting diode module 100. A circuit for driving the light emitting diode module 100 is formed in the driving circuit unit, and for example, a bridge rectifier (not shown) may be formed.

By arranging the bridge rectifier in the driving circuit portion, the lighting device can be used under an AC power source without a separate converter. Furthermore, when the light emitting diode chip is used as an AC LED chip, it is not necessary to provide a bridge rectifier in the driving circuit.

Claims (7)

Board;
A first pad and a second pad located on the substrate;
A first light emitting diode chip module including a plurality of light emitting diode chips formed on the substrate;
A second light emitting diode chip module including a plurality of light emitting diode chips formed on the substrate; And
And one or more switches electrically connecting or series-connecting the first light emitting diode chip module and the second light emitting diode chip module between the first pad and the second pad by a switching operation,
Wherein each of the light emitting diode chips comprises:
A plurality of light emitting cells connected in series to each other on a single substrate;
Wirings connecting the plurality of light emitting cells;
A distributed Bragg reflector positioned below said single substrate; And
And a metal layer positioned below the distributed Bragg reflector. The method according to claim 1,
Wherein the at least one switch switches the first light emitting diode chip module and the second light emitting diode chip module to be connected in parallel when the voltage applied to both ends of the first pad and the second pad is 110V, And switches the first light emitting diode chip module and the second light emitting diode chip module to be connected in series when the voltage is 220V. The method according to claim 1,
Wherein the at least one switch comprises:
A first switch for electrically switching a negative terminal of the first light emitting diode chip module and a negative terminal of the second light emitting diode chip module;
A second switch for electrically switching a positive terminal of the first light emitting diode chip module and a negative terminal of the second light emitting diode chip module;
And a third switch for electrically switching a positive terminal of the first light emitting diode chip module and a positive terminal of the second light emitting diode chip module. The method of claim 3,
A first wiring extending to the first pad;
A second wiring extending to the second pad; And
A third wiring, a fourth wiring, and a fifth wiring,
The third wiring is connected to the first light emitting diode chip module and the fourth wiring, and the first wiring and the fourth wiring are electrically connected by the operation of the third switch;
The fourth wiring is connected to the third wiring and is electrically connected to the fifth wiring by operation of the second switch;
And the fifth wiring is connected to the second switch and connected to the second LED chip module. The method of claim 3,
When the first light emitting diode chip module and the second light emitting diode chip module are connected in parallel, the first switch and the third switch are set to the closed state, the second switch is set to the open state,
Wherein when the first light emitting diode chip module and the second light emitting diode chip module are connected in series, the first switch and the third switch are set to an open state and the second switch is set to a closed state. Emitting diode module. The method according to claim 1,
A dam surrounding the plurality of light emitting diode chips on the substrate; And
And a molding unit for filling the space inside the dam to seal the plurality of light emitting diode chips. The method of claim 6,
Wherein the substrate surface comprises at least one closed region surrounded by a covered region covered by an insulating layer or by a covering region covered by the insulating layer and the dam,
Wherein at least two light emitting diode chips are mounted on one closed region.
KR1020110005769A 2011-01-20 2011-01-20 Led module KR101761854B1 (en)

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Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2007173548A (en) * 2005-12-22 2007-07-05 Rohm Co Ltd Light-emitting device and luminaire

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173548A (en) * 2005-12-22 2007-07-05 Rohm Co Ltd Light-emitting device and luminaire

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