CN101343734A - Method for removing forerunner of atom layer deposition process - Google Patents
Method for removing forerunner of atom layer deposition process Download PDFInfo
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- CN101343734A CN101343734A CNA2007101283760A CN200710128376A CN101343734A CN 101343734 A CN101343734 A CN 101343734A CN A2007101283760 A CNA2007101283760 A CN A2007101283760A CN 200710128376 A CN200710128376 A CN 200710128376A CN 101343734 A CN101343734 A CN 101343734A
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Abstract
Disclosed is a precursor elimination method in the atomic layer deposition process, which is included in the time period of the precursor elimination step of the atomic layer deposition process. Through inert gas periodic filling and stopping filling, the residual precursor and the by-product in a reaction chamber can be effectively eliminated. The time period of the precursor elimination step indicates the period from the end of a precursor feeding step to the beginning of the next precursor feeding.
Description
Technical field
The invention relates to a kind of precursor removing method of atom layer deposition process, and particularly relevant for a kind of removing method of promoting precursor removing usefulness.
Background technology
Ald (atomic layer deposition; ALD) for generally being used to the method for deposition of high-quality film in the semiconductor technology, its characteristic is for to be exposed to two or more with the sedimentary base material of desire in regular turn in reaction chamber, and under the atmosphere of the precursor gas of tool complementary characteristic, utilize the response characteristic of self-limit (self-limiting), carry out selective chemical absorption at substrate surface, become to grow one deck film of atom level thickness very uniformly, reach the characteristic of required film by the deposition step that carries out precursor repeatedly.
After each precursor deposition step is finished, before next precursor is sedimentary, need gas with deactivation, for example rare gas element such as argon gas removes residual precursor and by product thereof, with the chemical atmosphere of cleaning film surface and reaction chamber.
Please refer to Fig. 1, be known atom layer deposition process step synoptic diagram.In general, Atomic layer deposition method feeds step (pulse 1) for carrying out first precursor in regular turn, removes step (purge), second precursor feeds step (pulse 2) and remove step (purge), above-mentioned four steps can be a circulation, can carry out a plurality of circulations according to required film thickness.Membrane quality in order to ensure the best, the principal feature of atom layer deposition process is to feed between the step at two precursors, remove the step of (purge) precursor, and must there be adequate time to carry out this step removing residual precursor and by product thereof, yet also therefore makes the sedimentation rate of ALD technology can't promote significantly always.This effect of removing step can influence the number of good corrupt and foreign matter content of the uniformity coefficient of ALD film.
Summary of the invention
In view of this, one of purpose of the present invention provides a kind of precursor removing method of atom layer deposition process, removes the efficient of step to improve the sedimentation rate of conventional atomic layer depositing operation in order to precursor in the lifting atom layer deposition process.
The present invention proposes a kind of precursor removing method of atom layer deposition process, removes in the period of step in a precursor, carries out feeding rare gas element at least once and stops to feed the action of rare gas element.The period that precursor is removed step be precursor remove that step carries out during, be meant in the atomic layer deposition process, each precursor deposition step finish to next precursor begin to feed during.
Precursor removing method of the present invention, except the lasting gas that extracts with an air extractor in the reaction chamber in the period of this precursor removing step, more a rare gas element is fed to reaction chamber, and the summation that feeds the time of rare gas element is less than the time that this precursor is removed the period of step, the neutral gear that the does not feed rare gas element action of then only bleeding, by feeding rare gas element off and on and stopping to feed rare gas element, effectively precursor and the by product thereof in the cleaning reaction chamber.
Wherein, in the period of precursor removing step, can feed rare gas element one time, and follow to bleed residual precursor and by product thereof are removed, and the time that feeds rare gas element is less than the time that precursor is removed the period of step, in the period of precursor removing step, can have the neutral gear that does not feed rare gas element once or twice, continue to bleed in this neutral gear, the time that wherein feeds rare gas element and the temporal summation that does not feed rare gas element can be and equate or unequal.
In addition, also can remove in period of step repeatedly rare gas element of discontinuous feeding in precursor, and follow to bleed residual precursor and by product thereof are removed, the summation that feeds the time of rare gas element is less than the time that precursor is removed the period of step, and the neutral gear that does not feed rare gas element in precursor is removed period of step continues to bleed, by feeding rare gas element intermittently with stop to feed effectively precursor and the by product thereof in the cleaning reaction chamber of rare gas element.Wherein, the time that at every turn feeds rare gas element can be and equates or unequal, feeds at every turn between the rare gas element that the interval also can equate or unequal.
According to above-mentioned, precursor removing method of the present invention as can be known is to utilize intermittently to feed rare gas element and stop to feed rare gas element, effectively remove the impurity and the remaining precursor of ALD film surface, can improve precursor by this and remove the efficient of step, and obtain uniform film thickness, and promote the sedimentation rate of ALD depositing operation.
Description of drawings
State with other purposes, feature, advantage and embodiment and can become apparent, appended graphic being described in detail as follows on the present invention for allowing:
Fig. 1 is known atom layer deposition process step synoptic diagram;
Fig. 2 is the step synoptic diagram that illustrates according to a kind of atom layer deposition process of one embodiment of the invention;
Fig. 3 is the step synoptic diagram that illustrates according to a kind of atom layer deposition process of another embodiment of the present invention;
Fig. 4 is the step synoptic diagram that illustrates according to a kind of atom layer deposition process of further embodiment of this invention.
Fig. 5 is the step synoptic diagram that illustrates according to a kind of atom layer deposition process of yet another embodiment of the invention.
The foreign matter content comparison diagram of the film that Fig. 6 manufactures for the atom layer deposition process of using removing method shown in Figure 2 and traditional method.
The main element nomenclature
610: crest 620: crest
Embodiment
According to the precursor removing method of the embodiment of the invention, be in atom layer deposition process, to desire to remove in the period of precursor step, at least once feed rare gas element (for example argon gas) and stop to feed the action of rare gas element.The period that precursor is removed step is meant in the atomic layer deposition process, each precursor deposition step finish to next precursor begin to feed during.
According to one embodiment of the invention, in the period of precursor removing step, can feed rare gas element one time, and follow to bleed residual precursor and by product thereof are removed, and the time that feeds rare gas element is less than the time that precursor is removed the period of step, in the period of precursor removing step, can have the neutral gear that does not feed rare gas element once or twice, continue to bleed in this neutral gear, by intermittently feeding rare gas element and stopping to feed rare gas element, effectively precursor and the by product thereof in the cleaning reaction chamber.
According to another embodiment of the present invention, also can remove in period of step repeatedly rare gas element of discontinuous feeding in precursor, make the summation of the time that feeds rare gas element be less than the time that precursor is removed the period of step, and the neutral gear that does not feed rare gas element in precursor is removed period of step continues to bleed, by feeding rare gas element intermittently with stop to feed effectively precursor and the by product thereof in the cleaning reaction chamber of rare gas element.According to embodiments of the invention, the time that at every turn feeds rare gas element can be and equates or unequal, feeds at every turn between the rare gas element that the interval also can equate or unequal.
Please refer to Fig. 2, it illustrates the step synoptic diagram according to a kind of atom layer deposition process of one embodiment of the invention.Atom layer deposition process is example at this to carry out four steps, comprise: first precursor feeds step (pulse 1), removes step (purge), second precursor feeds step (pulse 2) and remove step four steps such as (purge), in fact can arrange required precursor to feed step according to required film characteristics, and each precursor feed that step finishes to begin to feed to next precursor during, remove step (purge).
As shown in Figure 2, at first feed one first precursor in a reaction chamber, make first precursor on the sedimentary base material of a desire, carry out selective adsorption,, when finishing first precursor deposition, carry out one first precursor and remove step (purge) with the deposition thin film.During removing that step carries out, promptly precursor feed step finish to next precursor begin to feed during, be defined herein as the period that a precursor of this atom layer deposition process is removed step.
According to embodiments of the invention, when the period of precursor removing step begins, feed rare gas element for some time, follow first precursor and the by product thereof of bleeding to remove with residual, stop to feed rare gas element afterwards, and continue to be pumped to the period end that precursor is removed step.According to embodiments of the invention, the time of feeding rare gas element can equate with the time that does not feed rare gas element or is unequal in the period of precursor removing step.
Then feed second precursor, behind deposition thin film on the base material, carry out one second precursor again and remove step.It is example that second precursor removing step is carried out in the mode identical with first precursor removing step at this, yet can also other modes, for example: adjust rare gas element and the order or the pitch time of bleeding, make the summation of the time that feeds rare gas element be less than the time that precursor is removed the period of step, or discontinuous feeding rare gas element repeatedly, and the neutral gear that does not feed rare gas element in precursor is removed period of step continues to bleed.
Please refer to Fig. 3, it illustrates the step synoptic diagram according to a kind of atom layer deposition process of another embodiment of the present invention.The steps flow chart of technology is similar to the atom layer deposition process of Fig. 2, and feeding step (pulse 1), removing step (purge), second precursor feeding step (pulse 2) and remove step four steps such as (purge) with first precursor equally is that example illustrates present embodiment.
When finishing first precursor deposition, carry out one first precursor and remove step (purge).A precursor of atom layer deposition process period of removing step for this reason during removing that step carries out, when the period of precursor removing step begins, reaction chamber for some time of bleeding earlier feeds rare gas element again, and follow to bleed the first residual precursor and by product thereof removed up to the period that precursor is removed step and finish, the time that wherein feeds rare gas element is less than the time that precursor is removed the step period.According to embodiments of the invention, the time of feeding rare gas element can equate with the time that does not feed rare gas element or is unequal in the period of precursor removing step.
Then feed second precursor, behind deposition thin film on the base material, carry out one second precursor again and remove step.It is to be example to remove with first precursor that the identical mode of step carries out at this that second precursor is removed step, yet can also other modes, for example: adjust rare gas element and the order or the pitch time of bleeding, make the summation of the time that feeds rare gas element be less than the time that precursor is removed the period of step, or discontinuous feeding rare gas element repeatedly, and the neutral gear that does not feed rare gas element in precursor is removed period of step continues to bleed.
Please refer to Fig. 4, it illustrates the step synoptic diagram according to a kind of atom layer deposition process of further embodiment of this invention.The steps flow chart of technology is similar to the atom layer deposition process of Fig. 2, when finishing first precursor deposition, carries out one first precursor and removes step (purge).A precursor of atom layer deposition process period of removing step for this reason during removing that step carries out.
When the period of precursor removing step begins, reaction chamber is bled for some time earlier, feeds rare gas element again, and follows first precursor and the by product thereof of bleeding residual to remove, stop to feed rare gas element afterwards, continue to bleed and remove the period end of step up to precursor.According to embodiments of the invention, in precursor is removed period of step, feed rare gas element time can with the temporal summation that does not feed rare gas element for equating or unequal.
Then feed second precursor, behind deposition thin film on the base material, carry out one second precursor again and remove step.It is example that second precursor removing step is carried out in the mode identical with first precursor removing step at this, yet can also other modes, for example carry out with Fig. 2 or method shown in Figure 3, or other can make the time that feeds rare gas element be less than the time that precursor is removed the period of step, and do not feed the method that the neutral gear of rare gas element continues to bleed in precursor is removed period of step.
Please refer to Fig. 5, it illustrates the step synoptic diagram according to a kind of atom layer deposition process of yet another embodiment of the invention.The steps flow chart of technology is similar to the atom layer deposition process of Fig. 2, when finishing first precursor deposition, carries out one first precursor and removes step (purge).A precursor of atom layer deposition process period of removing step for this reason during removing that step carries out.
Remove step can discontinuous feeding repeatedly the mode of rare gas element carry out, when beginning, feeds the period of precursor removing step rare gas element earlier, and follow first precursor and the by product of bleeding to remove with residual, stop afterwards feeding rare gas element and continuing for some time of bleeding, feed rare gas element afterwards again and continue to bleed and remove the period end of step up to precursor.According to embodiments of the invention, with the discontinuous feeding removing step of the mode of rare gas element repeatedly, its time that at every turn feeds rare gas element can be and equates or unequal; The interval also can be equal or unequal between each feeding rare gas element.In precursor is removed period of step, feed rare gas element temporal summation can equate with the temporal summation that does not feed rare gas element or unequal.
Then feed second precursor, behind deposition thin film on the base material, carry out one second precursor again and remove step, it is example that second precursor removing step is carried out in the mode identical with first precursor removing step at this, yet any way that can also be above-mentioned carries out, or other can make the time that feeds rare gas element be less than the time that precursor is removed the period of step, and do not feed the mode that the neutral gear of rare gas element continues to bleed carry out in precursor is removed period of step.
In addition, above-mentioned Fig. 2～four steps shown in Figure 5 can be a circulation, yet can carry out one or more circulation according to required film thickness; If when a removing step is last step of an atom layer deposition process, is the end of atom layer deposition process just when then the period of its precursor removing step finishes.
Please refer to Fig. 6, the foreign matter content comparison diagram of the film that manufactures for the atom layer deposition process of using removing method shown in Figure 2 and traditional method.Crest 610 is analyzed for the carbon content (impurity) of the film removing step with tradition and produce, and crest 620 is the carbon content analysis of the film that produces with removing step of the present invention.
As shown in Figure 6, utilize film carbon content that the atom layer deposition process of removing step of the present invention produces far below traditional method.Therefore, utilize method of the present invention, when removing step, at least once feed rare gas element and stop to feed rare gas element, can be by feeding rare gas element intermittently and the precursor and the by product thereof that stop to feed in the effective cleaning reaction of the rare gas element chamber.
Though the present invention discloses as above to count preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (11)
1. the removing method of the precursor of an atom layer deposition process comprises:
Remove in the period of step in a precursor of an atom layer deposition process, feed in rare gas element to a reaction chamber, and follow this precursor and the by product thereof of bleeding residual in the reaction chamber to remove, and the summation that feeds the time of this rare gas element is less than the time that this precursor is removed the period of step; And
Do not feed the time of rare gas element in the period of this precursor removing step, reaction chamber is bled constantly, to remove this precursor and by product thereof residual in this reaction chamber.
2. the removing method of the precursor of atom layer deposition process according to claim 1, this rare gas element that is wherein fed comprises an argon gas.
3. the removing method of the precursor of atom layer deposition process is according to claim 1 wherein removed in the period of step in this precursor, feeds a rare gas element to this reaction chamber.
4. as the removing method of the precursor of atom layer deposition process as described in the claim 3, wherein when beginning, feeds the period of this precursor removing step this rare gas element, and follow this precursor and the by product thereof of bleeding to remove with residual in the reaction chamber, and before the period end of this precursor removing step, stop to feed this rare gas element, continue to be pumped to the period end that this precursor is removed step.
5. as the removing method of the precursor of atom layer deposition process as described in the claim 3, wherein reaction chamber is bled earlier when the period that this precursor is removed step begins, and feeds rare gas element again and follows to bleed this residual in reaction chamber precursor and by product thereof removed up to the period that this precursor is removed step and finish.
6. as the removing method of the precursor of atom layer deposition process as described in the claim 3, wherein reaction chamber is bled earlier when the period of this precursor removing step begins, feed this rare gas element again and follow this precursor and the by product thereof of bleeding to remove residual in the reaction chamber, and before the period end of this precursor removing step, stop to feed this rare gas element, continue to be pumped to the period end that this precursor is removed step.
7. as the removing method of the precursor of atom layer deposition process as described in the claim 3, the time that wherein feeds this rare gas element equates with the time that does not feed rare gas element or is unequal.
8. the removing method of the precursor of atom layer deposition process is according to claim 1 wherein removed in the period of step in this precursor, discontinuous feeding repeatedly this rare gas element to this reaction chamber.
9. as the precursor removing method of atom layer deposition process as described in the claim 8, the time that wherein at every turn feeds this rare gas element equates or is unequal.
10. as the precursor removing method of atom layer deposition process as described in the claim 8, equate or be unequal the pitch time that wherein at every turn feeds this rare gas element.
11. the removing method of the precursor of atom layer deposition process according to claim 1 also is contained in this precursor and removes after the period of step finishes, and promptly finishes this atom layer deposition process.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007101283760A CN101343734A (en) | 2007-07-10 | 2007-07-10 | Method for removing forerunner of atom layer deposition process |
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| CNA2007101283760A CN101343734A (en) | 2007-07-10 | 2007-07-10 | Method for removing forerunner of atom layer deposition process |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102645455A (en) * | 2012-03-22 | 2012-08-22 | 南京工业大学 | Preparation method for sensitive humidity sensor material |
| CN107607363A (en) * | 2016-07-11 | 2018-01-19 | 宁波创润新材料有限公司 | Sampler and sampling method |
| CN108385073A (en) * | 2018-04-24 | 2018-08-10 | 信利（惠州）智能显示有限公司 | The production method of ito thin film |
| CN109402608A (en) * | 2017-08-16 | 2019-03-01 | 北京北方华创微电子装备有限公司 | A kind of air-channel system and its control method of atomic layer deposition apparatus |
| CN112663027A (en) * | 2020-12-02 | 2021-04-16 | 鑫天虹(厦门)科技有限公司 | Atomic layer deposition equipment capable of reducing precursor deposition and manufacturing method |
| CN113100608A (en) * | 2021-05-14 | 2021-07-13 | 付常青 | Preservation method for cultural relic exhibition and exhibition frame thereof |
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2007
- 2007-07-10 CN CNA2007101283760A patent/CN101343734A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102645455A (en) * | 2012-03-22 | 2012-08-22 | 南京工业大学 | Preparation method for sensitive humidity sensor material |
| CN102645455B (en) * | 2012-03-22 | 2014-02-26 | 南京工业大学 | Preparation method for sensitive humidity sensor material |
| CN107607363A (en) * | 2016-07-11 | 2018-01-19 | 宁波创润新材料有限公司 | Sampler and sampling method |
| CN107607363B (en) * | 2016-07-11 | 2019-12-20 | 宁波创润新材料有限公司 | Sampling device and sampling method |
| CN109402608A (en) * | 2017-08-16 | 2019-03-01 | 北京北方华创微电子装备有限公司 | A kind of air-channel system and its control method of atomic layer deposition apparatus |
| CN109402608B (en) * | 2017-08-16 | 2020-12-08 | 北京北方华创微电子装备有限公司 | Gas path system of atomic layer deposition equipment and control method thereof |
| CN108385073A (en) * | 2018-04-24 | 2018-08-10 | 信利（惠州）智能显示有限公司 | The production method of ito thin film |
| CN112663027A (en) * | 2020-12-02 | 2021-04-16 | 鑫天虹(厦门)科技有限公司 | Atomic layer deposition equipment capable of reducing precursor deposition and manufacturing method |
| CN113100608A (en) * | 2021-05-14 | 2021-07-13 | 付常青 | Preservation method for cultural relic exhibition and exhibition frame thereof |
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Open date: 20090114 |