CN101335328B - Phase-change memory device unit construction and manufacturing method thereof - Google Patents
Phase-change memory device unit construction and manufacturing method thereof Download PDFInfo
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- CN101335328B CN101335328B CN2008100413935A CN200810041393A CN101335328B CN 101335328 B CN101335328 B CN 101335328B CN 2008100413935 A CN2008100413935 A CN 2008100413935A CN 200810041393 A CN200810041393 A CN 200810041393A CN 101335328 B CN101335328 B CN 101335328B
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Abstract
The invention relates to a device unit structure of a phase change memory and a preparation method thereof. The structure and the method are characterized in that the lateral scales of a phase change material and a heating electrode in the device unit are controlled in the same nanometer scale, and a structure of a small phase change material operated by a small heating electrode is formed. The preparation method includes the following steps: first, a dielectric material layer is prepared on a substrate, then the heating electrode of the phase change memory cell is prepared in the dielectric material layer by standard deep sub-micron technology or FIB technology, later chemical mechanical polishing is carried out to form a nanometer heating electrode which is embedded in the dielectric material layer, and at last a certain thickness of the top of the heating electrode is eroded to form a dielectric hole at the upper end of the electrode; a phase change material is filled in the hole and the top electrode is extracted so as to form a memory cell structure with the small electrode and the small phase change material simultaneously. The structure and the method have the advantages that the phase change material is limited to the dielectric hole on the upper end of the electrode to prevent the phase change material from the diffusion in the process of repeated erasing and writing, and are more favorable to reducing the energy consumption of the memory cell.
Description
Technical field
The present invention relates to a kind of phase-change memory device unit construction and preparation method thereof, specifically a kind of memory cell structure of realizing little heating electrode and little phase-change material zone simultaneously and preparation method thereof.Belong to nano-device and preparation technology field in the microelectronics.
Background technology
Dynamic random access memory (DRAM), static RAM (SRAM) and flash memory (FLASH) etc. play an important role in all fields, but also there are not at present the data high-speed, FLASH of high capacity low cost, SRAM of a kind of DRAM of having concurrently non-volatile, have simultaneously not only that reliability height, operating voltage are low, power consumption but also little memory, and needed memory technologies in field such as the consumer electronics industry of new generation exactly of these characteristics, computer industry.Phase transition storage (PCRAM) have memory cell size little, non-volatile, have extended cycle life, good stability, low in energy consumption and can embed advantages such as function is strong, particularly the advantage aspect the micro of device feature size is particularly outstanding, industry is thought that FLASH will meet with size in the near future and is dwindled restriction, and PCRAM has increasing technical advantage behind the 65nm node.Therefore, PCRAM is considered to one of best solution of non-volatile memory technology of future generation, in low pressure, low-power consumption, at a high speed, have wide commercial prospect aspect high density and the embedded storage.
International well-known semiconductor company such as Intel, Samsung, STMicw Electronics, Philip, International Business Machine Corporation (IBM) and Ai Bida etc. are all spending a large amount of man power and materials that this technology is developed, and have developed the PCRAM pilot chip that heap(ed) capacity is 512Mb at present.China carried out the research of PCRAM since 2003, country pays much attention to this technology.At present PCRAM is in the early stage of industrialization in the world, China aspect the research of new material and nanoprocessing with the international level that is in synchronized development, be faced with the inside truck of greatly developing and promote the PCRAM technology now.
Phase-change memory device unit construction all is mushroom-shaped structure basically at present, promptly utilizes little heating electrode to handle the reversible transition material and (sees Fig. 1 a); Perhaps phase-change material is filled in the medium hole, the hole bottom connects hearth electrode (seeing Fig. 1 b).
Summary of the invention
The present invention proposes a kind of phase-change memory device unit construction and preparation method thereof, the reversible transition material in the phase transformation memory device unit that provides and the breadth wise dimension of heating electrode are controlled at same nano-area scope, the structure of the little phase-change material of the little heating electrode operation nanoscale of formation nanoscale.At first on substrate, prepare layer of dielectric material, the heating electrode of in layer of dielectric material, producing phase-change memory cell by the deep submicron process (such as 90nm technology) or focused ion beam (FIB) technology of standard then, then carry out chemico-mechanical polishing, formation is embedded in the nanometer heating electrode in the dielectric material, at last the heating electrode top is etched away certain thickness heating electrode, thereby the upper end at heating electrode forms the medium hole, fills phase-change material in formed medium hole.Final formation has the memory cell structure of small electrode and little phase-change material simultaneously, phase-change material is limited in the medium hole of heating electrode upper end, stoped the diffusion of phase-change material in erasable process repeatedly, the structure in simultaneously little heating electrode operation I reverse transformation zone is drawn top electrode, help reducing the power consumption of memory cell more, reliability also improves greatly simultaneously.
Concrete processing step of the present invention is as follows:
(a) deposit one deck hearth electrode on Si substrate or other substrate, the thick SiO of growth 100nm-900nn on hearth electrode
2Or SiN
xDielectric layer;
(b) utilize electron beam lithography technology or other lithographic technique to prepare the nano aperture array on above-mentioned dielectric layer, the diameter of hole is at 50nm-150nm, and the bottom of hole links to each other with hearth electrode;
(c) deposit heating electrode material in hole fills up whole hole;
(d) adopt chemico-mechanical polishing (CMP) dielectric material (SiO that aperture is outer
2Or SiN
xDeng) and the heating electrode material removal;
(e) etch away the heating electrode of certain thickness (more than tens nanometers) in the hole, thereby on electrode, form column heating electrode top medium holes;
(f) in the column heating electrode top medium holes of electrode upper end, fill phase-change material;
(g) method by etching forms the figure of T type phase-change material;
(h) the preparation top electrode forms testable phase-change memory cell.
Described backing material is unrestricted, can be the Si sheet of using always, and semi-conducting materials such as GaAs also can be dielectric material or metal materials such as quartz glass, ceramic substrate.When metal material is made substrate, directly make hearth electrode (embodiment 2).
Described hearth electrode is unrestricted, can be conductor material commonly used such as aluminium, copper, and its thickness is 200-900nm.
Described dielectric material is SiO commonly used
2, SiN
xDeng material, thickness 100nm-900nm.
Hole on the described dielectric layer can use methods such as electron beam photoetching process, focused-ion-beam lithography method, electron beam exposure and reactive ion etching method to obtain.
The material of described heating electrode is the material that W, Pt etc. have certain resistivity, even can be again on W, Pt etc. the heating material of the high resistivity of the several nanometer thickness of deposition one deck such as TiW, TiN, Ge-Si-N, TiAlN etc., material with certain resistivity, thereby the raising heats reduces operating current.
Described phase-change material is unrestricted, can have the material of phase-change characteristic for all, such as being Ge-Sb-Te series, also can be series such as Si-Sb-Te series, or Si-Sb.
Described upper electrode material is any electrode materials such as Pt, Au or W.
The method of described etching column heating electrode top medium holes can be used reactive ion etching, and etching gas is etching gas such as sulphur hexafluoride, carbon tetrafluoride, fluoroform.
Describedly etch away certain thickness heating electrode, thereby the method that forms the medium hole in the electrode upper end is not limited to reactive ion etching technology, can be other lithographic technique, as long as heating electrode and dielectric material are had certain etching selection ratio.
Described method of filling phase-change material in hole can be a chemical vapor deposition (CVD), ald (ALD), or atomic layer vapour deposition (AVD) method, but be not limited to these methods.
The invention provides a kind of phase-change memory device unit construction and preparation method thereof, phase-change material in the device cell and heating electrode can be controlled at nanoscale simultaneously, constitute the structure that little heating electrode is operated little phase-change material.The present invention is equally applicable to other device that needs small electrode and little active area.
Specifically, the invention provides a kind of phase-change memory device unit construction, it is characterized in that:
(a) breadth wise dimension of reversible transition material and heating electrode is controlled at same nanoscale scope, helps reducing the power consumption of memory cell more; Described nanoscale scope is 50nm～150nm;
(b) need adopts the method for etching, promptly utilizes the different etching speed of heating electrode and dielectric material, etches away the heating electrode head portion and can form the hole of filling phase-change material, does not need to increase in addition a reticle;
(c) realize heating electrode and phase change region autoregistration, do not have the alignment issues of subsequent technique;
(d) from Fig. 1 (c) and Fig. 5 as can be known with the reversible transition materials limitations in the same medium hole on heating electrode top, the reversible transition material is T type structure, make the region limits that undergoes phase transition in hole, maximum reversible transition zone lateral dimension can only be a medium holes hole dia size, thereby stoped the continuous expansion of phase change region in erasable process repeatedly, device reliability improves greatly.
The present invention proposes a kind of phase-change memory device unit construction and preparation method thereof, realize the memory cell structure (seeing Fig. 1 c) in little heating electrode and little phase-change material zone simultaneously, do not need to increase in addition a reticle, only need utilize the method for selective etching to form the medium hole of filling phase-change material, realize heating electrode and phase change region autoregistration in the heating electrode upper end.The advantage of such memory cell structure be with the reversible transition region limits in the medium hole of heating electrode upper end, stoped the diffusion of phase-change material in erasable process repeatedly, help reducing simultaneously the power consumption of memory cell more, reliability also improves greatly.
Can write phase transformation memory device unit provided by the invention, wiping, read operation, study its storage characteristics and fatigue properties, with further raising Performance And Reliability.
Description of drawings
The memory cell structure schematic diagram of Fig. 1 (a) mushroom-shaped structure
(b) phase-change material is filled in the memory cell structure schematic diagram in the medium hole
(c) memory cell basic structure schematic diagram provided by the invention
Fig. 2 has prepared the device architecture of heating electrode
Fig. 3 forms the device architecture of column heating electrode top medium holes
Device architecture in Fig. 4 hole behind the filling phase-change material
Device architecture behind Fig. 5 etching phase-change material
Fig. 6 has prepared the device architecture behind the heat-insulating material
Fig. 7 forms the device architecture behind the top electrode
Wherein, 1. hearth electrode; 2. dielectric layer; 3. column heating electrode; 4. phase-change material; 5. top electrode; 6. column heating electrode top medium holes; 7. heat insulation layer; 8. top electrode fairlead.
Embodiment
Below by specific embodiment, further illustrate substantive distinguishing features of the present invention and obvious improvement, but the present invention only is confined to described embodiment by no means.
Embodiment 1:
(1) is being coated with SiO
2Utilize the method for magnetron sputtering or evaporation to prepare the thick Al film of one deck 200nm on the Si substrate of medium as hearth electrode;
(2) utilize the method for PECVD or sputter on hearth electrode Al film, to prepare the thick SiO of 200nm
2
(3) at the thick SiO of above-mentioned 200nm
2On utilize the electron beam lithography technology to prepare nano aperture, hole bottom links to each other with hearth electrode, hole diameter is in the 50nm-150nm scope;
(4) utilize ALD technology deposit W film in hole, fill up until hole;
(5) utilize W, the SiO of CMP technology jettisoning hole with exterior domain
2Medium forms SiO
2Be inlaid with the structure of column W heating electrode in the medium; (Fig. 2)
(6) utilize W and SiO
2The different etching speed of medium utilizes RIE (reactive ion etching) method to etch away the W heating electrode top of certain thickness (50-100nm), forms medium holes on W heating electrode top, and etching gas is a sulphur hexafluoride; (Fig. 3)
(7) utilize ALD, PVD in the medium holes on W heating electrode top, to fill phase-change material Ge-Sb-Te; (Fig. 4)
(8) utilize lithographic technique to prepare phase change material unit (Fig. 5);
(9) preparation heat-insulating material SiO
2, at SiO
2Perforate on the heat-insulating material; (Fig. 6)
(10) preparation top electrode, thus phase transformation memory device unit obtained; (Fig. 7)
(11) this phase transformation memory device unit is connected in the electrical measurement system, carries out the writing of phase transformation memory device unit, wiping, read operation, study its storage characteristics and fatigue properties etc.
Embodiment 2:
Change the Si substrate of embodiment 1 into metal substrate, as Al, Au etc., metal substrate is directly as hearth electrode, and other can obtain result similar to Example 1 with the 2nd to the 11st step of embodiment 1.
Claims (10)
1. phase-change memory device unit construction, the reversible transition material in the described phase transformation memory device unit and the breadth wise dimension of heating electrode are controlled at same nanoscale scope, the structure of the little phase-change material of the little heating electrode operation nanoscale of formation nanoscale; It is characterized in that the reversible transition materials limitations in the same medium hole on column heating electrode top, the reversible transition material is T type structure, makes the region limits that undergoes phase transition in hole.
2. by the described phase-change memory device unit construction of claim 1, it is characterized in that the zone autoregistration of heating electrode and phase-change material.
3. by the described phase-change memory device unit construction of claim 1, it is characterized in that described same nanoscale scope is 50nm～150nm.
4. make the method for phase-change memory device unit construction as claimed in claim 1, it is characterized in that at first on substrate, preparing layer of dielectric material, in layer of dielectric material, produce the heating electrode of phase-change memory cell then, then carry out chemico-mechanical polishing, formation is embedded in the nanometer heating electrode in the dielectric material, etch away certain thickness heating electrode at last, thereby form the medium hole in the heating electrode upper end, in formed medium hole, fill phase-change material, by the figure of lithographic method formation T type phase-change material, final formation has the memory cell structure of nanoscale small electrode and the little phase-change material of nanoscale simultaneously.
5. by the manufacture method of the described phase-change memory device unit construction of claim 4, it is characterized in that concrete processing step is:
(a) deposit one deck hearth electrode on backing material, SiO grows on hearth electrode
2Or SiN
xDielectric layer;
(b) utilize electron beam lithography, focused-ion-beam lithography, electron beam exposure or reactive ion etching method to prepare the nano aperture array on the dielectric layer that step a makes, the diameter of hole is at 50nm-150nm, and the bottom of hole links to each other with hearth electrode;
(c) deposit heating electrode material in the nano aperture that step b forms fills up whole hole;
(d) adopt cmp method dielectric material that hole is outer and heating electrode material to remove;
(e) etch away the heating electrode of 50-100 nano thickness in the hole, thereby form column heating electrode top medium holes in the upper end of heating electrode;
(f) in the column heating electrode top medium holes of heating electrode upper end, fill phase-change material;
(g) etching phase-change material forms phase-variant material array;
(h) the preparation top electrode forms testable phase-change memory cell.
6. by the manufacture method of the described phase-change memory device unit construction of claim 5, it is characterized in that described backing material is semi-conducting material, dielectric material or metal material; Described semi-conducting material is Si or GaAs; Described dielectric material is quartz glass or ceramic substrate; When metal material is backing material directly as hearth electrode.
7. by the manufacture method of the described phase-change memory device unit construction of claim 5, the hearth electrode thickness that it is characterized in that deposit on backing material is 200nm～400nm.
8. by the manufacture method of the described phase-change memory device unit construction of claim 5, it is characterized in that described dielectric material is SiO
2Or SiN
x, thickness is 100nm～900nm.
9. by the manufacture method of the described phase-change memory device unit construction of claim 5, it is characterized in that the heating electrode material of deposit in the nano aperture is W or Pt; Or on W or Pt heating material TiW, TiN, Ge-Si-N or the TiAlN of the high resistivity of deposition one deck several nanometer thickness.
10. by the manufacture method of claim 4 or 5 described phase-change memory device unit constructions, it is characterized in that:
(a) form hole with reactive ion etching method in the heating electrode upper end, etching gas is sulphur hexafluoride, carbon tetrafluoride or chloroform;
(b) method of filling phase-change material is CVD, ALD or AVD in the hole that step a forms.
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| CN102447061A (en) * | 2011-12-12 | 2012-05-09 | 华中科技大学 | Preparation method of high-speed low-power-consumption phase change memory |
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| CN101847687B (en) * | 2009-03-27 | 2013-01-02 | 力晶科技股份有限公司 | Phase-change memory element and manufacturing method thereof |
| CN101937971A (en) * | 2010-08-18 | 2011-01-05 | 中国科学院半导体研究所 | Vertical phase transition storage and preparation method thereof |
| CN102544363A (en) * | 2010-12-29 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | Preparation method for phase change memory bottom electrode structure |
| CN102800808B (en) * | 2012-09-11 | 2014-08-20 | 中国科学院上海微系统与信息技术研究所 | Antimony-rich high-speed phase change material for phase change memory, method for preparing antimony-rich high-speed phase change material and application of material |
| CN103158057B (en) * | 2013-03-06 | 2016-02-17 | 中国科学院上海微系统与信息技术研究所 | Determine method and the detection system of the chemical mechanical polishing stop point of phase-change material |
| CN105098063A (en) * | 2014-04-28 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN106159085A (en) * | 2015-04-01 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | Phase-change memory cell and preparation method thereof |
| CN108807667B (en) * | 2018-05-30 | 2020-08-04 | 华中科技大学 | Three-dimensional stacked memory and preparation method thereof |
| CN111244272A (en) * | 2020-01-19 | 2020-06-05 | 中国科学院上海微系统与信息技术研究所 | Dry etching method of phase change material |
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| CN102447061A (en) * | 2011-12-12 | 2012-05-09 | 华中科技大学 | Preparation method of high-speed low-power-consumption phase change memory |
| CN102447061B (en) * | 2011-12-12 | 2014-08-27 | 华中科技大学 | Preparation method of high-speed low-power-consumption phase change memory |
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