CN101335309B - Method for enhancing dynamic range of quantum dot resonance tunneling diode photodetector - Google Patents
Method for enhancing dynamic range of quantum dot resonance tunneling diode photodetector Download PDFInfo
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- CN101335309B CN101335309B CN2008100411588A CN200810041158A CN101335309B CN 101335309 B CN101335309 B CN 101335309B CN 2008100411588 A CN2008100411588 A CN 2008100411588A CN 200810041158 A CN200810041158 A CN 200810041158A CN 101335309 B CN101335309 B CN 101335309B
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Abstract
The invention discloses a method for increasing the dynamic range of a quantum dot resonance tunneling diode photodetector, and the hardcore of the structure thereof comprises a GaAs or InGaAs incident photon absorption layer, InAs self-assembly quantum dots with order of magnitude being 10<10>cm<-2> to 10<11>cm<-2> and an AlGaAs/GaAs double-potential-barrier structure layer; the core of the technology thereof is improved to extend the annealing time of the technique of the crisscross bridge resonance tunneling diode device so as to lead ohmic contact to diffuse to the double-potential-barrier structure layer; the core inventive point of the detecting approach thereof is that a longitudinal current branch of an original tunneling diode which is sensitive to small photons is kept, simultaneously, another transverse current which consists of two-dimensional electron gas is educed from a quantum well and can reflect the continuous variation of incident light intensity when suffering intensive modulation from a quantum dot electric field. The device of the invention has the advantages that the improvement of both the structure and the technology of the device can be compatible with the original equipment while the multiphoton detection sensitivity is greatly improved compared with the original device.
Description
Technical field
The present invention relates to visible light and short-wave infrared detector technology, specifically be meant a kind of method that improves dynamic range of quantum dot resonance tunneling diode photodetector, it is used to make detection light intensity great dynamic range continually varying quanta point resonance tunnel penetration diode device visible or the short-wave infrared incident light, that field effect strengthens.
Background technology
Quanta point resonance tunnel penetration diode (QDRTD) is highly sensitive visible, the near-infrared photon sensitive detection parts that grow up abroad in 2005.Its structure mainly is to imbed one deck quantum dot (QD) in resonance tunnel-through double potential barrier front, forms the quanta point resonance tunnel penetration diode structure.Because the resonance tunnel-through electric current is very responsive to the aligning of emitter Fermi level and quantum well energy level, the variation slightly of double potential barrier electromotive force all will cause the significant change of resonance tunnel-through electric current.Near double potential barrier one side, discharging and recharging of quantum dot will cause the double potential barrier electromotive force that the variation of meV magnitude is arranged, and make entire device adjust to the resonance tunnel-through state by off-resonance tunnelling state for quantum dot.Such charge and discharge process is realized the charge and discharge process of quantum dot by photo-generated carrier under the illumination, just can be expressed to come in and go out and penetrate the variation of number of photons, realize highly sensitive few photon or even single photon detection by the variation of resonance tunnel-through electric current.
The height that the resonance tunnel-through electric current is aimed at energy level relies on also disadvantageous one side.The photon high sensitivity of QDRTD is to utilize quantum dot to capture photohole, makes potential well energy level and emitter Fermi level be adjusted to aligning by misalignment, and electric current sharply increases.If but energy level aims at the back quantum dot and continue to capture photohole, the electromotive force of quantum well will continue to reduce, and finally makes potential well energy level and emitter Fermi level mismatch again, and the resonance tunnel-through electric current diminishes.This effect makes under the same bias voltage that quanta point resonance tunnel penetration diode is only to few photon-sensitive, and insensitive on the contrary to the multi-photon irradiation: the dynamic range that is to say detector becomes smaller.
Summary of the invention
Based on quanta point resonance tunnel penetration diode (QDRTD) only to few photon-sensitive, insensitive on the contrary to multi-photon, the shortcoming that the detector dynamic range is little, the purpose of this invention is to provide a kind of method that improves dynamic range of quantum dot resonance tunneling diode photodetector, by device technology and the suitable tunnel-through diode structure of selection of improving the quanta point resonance tunnel penetration diode detector, make that device not only can be to few photon-sensitive, also irradiation has high sensitive features equally to multi-photon simultaneously, is promptly keeping very big dynamic range.
Method of the present invention is based on following operation principle: when resonance tunnel-through takes place QDRTD, have the accumulation of electronics in quantum well, and be distributed in the quantum well with the form of two-dimensional electron gas.In common QDRTD, electronics has only path of resonance tunnel-through longitudinally, and vertical tunnelling can only take place the electronics that is accumulated in quantum well, shown in the current path 13 (path RTD) of figure one.In our device, utilization infiltrates through the Au/AuGeNi in the ohmic contact top electrode in the quantum well, we directly are drawn out to electrode by the two-dimensional electron gas that will be accumulated in quantum well of success, have formed the second road electric current, shown in the current path 14 (path QW) of figure one.Our device just has the two-way electric current like this: path RTD and path QW, and path QW is near the quantum dot layer of charging, be subjected to the charging quantum dot electric field modulation of its mobility.Incident light is strengthened continuously, the charging quantum dot is captured the photoproduction cavity discharge, make from quantum dot that the electric field of electronic localizationization dies down in the quantum well, path QW branch road charge carrier electromobility improves constantly, path QW branch current constantly increases, so our device just can be surveyed the continuous variation of incident light subnumber.
Purpose of the present invention is realized by following technical scheme:
Quanta point resonance tunnel penetration diode material structure of the present invention and device technology are shown in figure one.The stratified material structure of figure one is on semi-insulated GaAs substrate 1, is arranged in order the n of growth GaAs resilient coating 2, AlAs corrosion barrier layer 3, doping content gradual change by molecular beam epitaxial method
+GaAs lower electrode layer 4, a GaAs wall 5, dual potential barrier structure layer 6, the 2nd GaAs wall 7, InAs quantum dot layer 8, intrinsic GaAs quantum dot cover layer 9, the 3rd GaAs or InGaAs wall 10 and n
+GaAs upper electrode layer 11 is formed.Wherein dual potential barrier structure layer 6 is made up of potential barrier 6-1, potential well 6-2.After device technology is finished, can be at n
+Evaporation Au, AuGeNi on the GaAs upper electrode layer 11, and rapid thermal annealing forms Ohm contact electrode layer 12.
Figure one has also illustrated the technology of device.Device technology adopts air-insulated intersection bridge resonance tunnel-through diode technology, and the technology detailed step can be with reference to J.Wang et al., Appl.Phys.Lett.65,1124 (1994).Our device preparation technology is the rapid thermal annealing time that further prolongs ohmic contact on original technology basis, allows Au, AuGeNi ohmic contact in the top electrode pass n
+GaAs upper electrode layer 11, intrinsic GaAs wall 10 penetrate in the dual potential barrier structure 6 always, form Ohm contact electrode layer 12.To material structure n
+ GAAs layer 4 is the device lower electrode layer, and the electronics of quantum well longitudinal resonance tunnelling accumulation just can directly flow to top electrode by the current branch among the figure 14 (path QW), forms the second road electric current.
Further specifying of device architecture of the present invention is as follows:
Said GaAs resilient coating 2, thickness is at 200-500nm.
Said AlAs corrosion barrier layer 3, thickness is at 2-20nm.
The n of said doping content gradual change
+GaAs lower electrode layer 4, concentration is 10
16-10
18Cm
-3, thickness is at 100-500nm.
A said GaAs wall 5, thickness is at 5-40nm.
Said dual potential barrier structure layer 6 is by Al
xGa
1-xAs potential barrier 6-1, GaAs quantum well 6-2 form.The x component generally is taken as 0.33～1.0.Potential barrier thickness is 1nm～10nm, and potential well thickness 5nm-10nm depends on the operating current size of device needs.
Said the 2nd GaAs wall 7, thickness is 0～15nm.Space layer is thick more, and quantum dot is weak more to the regulating power of quantum well two-dimensional electron gas electric current 14 (path QW).
Said InAs quantum dot layer 8, density is 10
10-10
11Cm
-2, quantum dot density is close more, and quantum dot is strong more to the regulating power of two-dimensional electron gas electric current 14 (path QW).Device is closely related to the sensitivity and the quantum dot density of incident photon.
Said intrinsic GaAs quantum dot cover layer 9, thickness is at 5nm～50nm.
Said the 3rd GaAs or InGaAs wall 10 are the GaAs layer to absorbing the desirable wall of visible light; To absorbing the desirable wall of short-wave infrared is the InGaAs layer.Wall mainly plays the effect of generation photo-generated carrier, and thickness and incident light absorption efficiency are closely related.Thickness is at 50nm～350nm.
Said n
+GaAs upper electrode layer 11, thickness are at 50nm-300nm, and silicon doping concentration is 10
16-10
18Cm
-3
This device needs top electrode Au, AuGeNi layer 12 from n
+GaAs upper electrode layer 11 infiltrates in the dual potential barrier structure layer 6 always, so that draw quantum well two-dimensional electron gas electric current 14.Method is for steaming gold back rapid thermal annealing, 400-500 ℃, 30-60s.
For guaranteeing device works fine of the present invention, the device detecting temperature is at liquid nitrogen temperature (77K).
The advantage of device of the present invention is as follows:
Do not increase too much difficulty at material with the relative conventional quanta point resonance tunnel penetration diode device of technological approaches of the present invention aspect device prepares: as aspect material except the quantum dot of the density of having relatively high expectations (10
10Cm
-2-10
11Cm
-2), the material structure of employing is identical with conventional quanta point resonance tunnel penetration diode structure, and the quantum dot density that growth the present invention requires is not difficult to realize in the material growth.The technology of device of the present invention also with conventional quanta point resonance tunnel penetration diode process compatible, (400-500 ℃, 30s-1min), this is easy to accomplish except rapid thermal annealing time of prolonging ohmic contact.
Device of the present invention has kept the operating current branch road 13 (path RTD) of original device, has just added one road electric current 14 (path QW) in device in addition.Therefore kept the susceptibility of device, but made device responsive too to multi-photon under same bias voltage few photon.Therefore the quanta point resonance tunnel penetration diode after we improve can be used for changing continuously the detection of light intensity, has promoted the dynamic range of optical detection widely.
Description of drawings
Fig. 1 is material structure, device technology and the operating current path schematic diagram of device of the present invention.Understand the required two-way electric current of device work at the device subscript: arrow 13 is path RTD, and arrow 14 is path QW.The figure left side has illustrated that Au electrode 12 should infiltrate through in the dual potential barrier structure layer 6.The bottom electrode of device is n
+GaAs layer 4.
The left figure of Fig. 2 is the response diagram of the current-voltage curve of conventional quanta point resonance tunnel penetration diode to incident light.Dotted arrow is illustrated under this bias voltage, when the increase of LED electric current, and the incident light grow, device current diminishes on the contrary.The quanta point resonance tunnel penetration diode that the field effect that right figure is an improved of the present invention strengthens shows that incident light continues grow along with the LED electric current continues to increase, and becomes big but device current is also dull.The material structure that two figure adopt about (LED is a green light LED) is identical, and working temperature is all 77K.
Fig. 3 is the incident laser to 632.8nm, and after neutral attenuator decayed to few photon magnitude, device was to the response of incident light.This curve shows that our device is all enough sensitive to 250 photon to 25000 photons of every square micron per second.
Embodiment
Be described further below in conjunction with accompanying drawing and embodiment working method this device.
The quanta point resonance tunnel penetration diode structure that the field effect of this example strengthens is shown in figure one, and getting GaAs resilient coating 2 thickness is the n of 400nm, AlAs corrosion barrier layer 3 thickness 15nm, doping content gradual change
+GaAs lower electrode layer 4 thickness 430nm and concentration are from 10
18Cm
-3Be gradient to 10
16Cm
-3, a GaAs wall 5 thickness 20nm, dual potential barrier structure layer 6 are made of and AlAs potential barrier bed thickness 3nm AlAs potential barrier 6-1 and GaAs potential well 6-2, the thick 8nm of GaAs potential well, the 2nd GaAs wall 7 thickness 2nm, InAs quantum dot 8 density are 10
11Cm
-2, intrinsic GaAs quantum dot cover layer 9 thickness 10nm, the 3rd GaAs wall 10 thickness 150nm, n
+GaAs upper electrode layer 11 thickness 50nm.This structural design is highly sensitive to visible light, and last Ohm contact electrode is designed to be diffused into GaAs quantum well layer 6-2.
Device technology adopts air-insulated intersection bridge quanta point resonance tunnel penetration diode technology, and processing step is referring to J.Wang et al., Appl.Phys.Lett.65,1124 (1994).Our improvement is when rapid thermal annealing forms ohmic contact 12, prolongs annealing time, is 420 °, 45s.Annealing back gold penetrates in the dual potential barrier structure 6.The effective area of device active region is 1um
2
(material structure is identical, is rapid thermal annealing time weak point, and ohmic contact just is penetrated into n can to see traditional quanta point resonance tunnel penetration diode from figure two
+GaAs upper electrode layer 11) under the fixed bias voltage, electric current increases afterwards earlier with increasing of number of photons and reduces.And the quanta point resonance tunnel penetration diode electric current after our improvement increases along with the increase of number of photons is lasting.
Figure three can see under the quanta point resonance tunnel penetration diode 77K of the present invention enough sensitive to 250 photon to 25000 photons of every square micron per second.And under the multi-photon incident, the electric current amplification of device is far above traditional quantizing resonance tunnel-through diode.
Therefore can be used for continuous light intensity fully from figure two, figure three device of the present invention as can be seen surveys.
The working mechanism of this device further specifies as follows:
(1) resonance tunnel-through takes place in the QDRTD double potential barrier under positively biased, and quantum well 6-2 gathers the tunnelling electronics, and simultaneously quantum dot layer 8 is captured tunnelling and gone out the electronics of double potential barrier and charge.
(2) to the charging quantum dot, because quantum dot 8 is near quantum well 6-2, be subjected to the charging strong modulation of quantum dot electric field of the stored charge of quantum well, very low along the carrier mobility of figure one path QW14 branch road, electric current is very little.
(3) under the incident light irradiation, quantum dot is captured photohole, and quantum dot discharges gradually, and the electric field of quantum dot dies down, and the quantum well electronics sharply increases along the mobility of path QW14 branch road, so our device current also just sharply increases.
Therefore our device can be referred to as the quanta point resonance tunnel penetration diode that field effect strengthens.
Claims (5)
1. method that improves dynamic range of quantum dot resonance tunneling diode photodetector, it is characterized in that: it adopts following panel detector structure: on semi-insulated GaAs substrate (1), be arranged in order the n of growth GaAs resilient coating (2), AlAs corrosion barrier layer (3), doping content gradual change by molecular beam epitaxial method
+GaAs lower electrode layer (4), a GaAs wall (5), dual potential barrier structure layer (6), the 2nd GaAs wall (7), InAs quantum dot layer (8), intrinsic GaAs quantum dot cover layer (9), the 3rd GaAs or InGaAs wall (10) and n
+GaAs upper electrode layer (11) forms the Ohm contact electrode layer (12) that infiltrates through dual potential barrier structure layer (6) by rapid thermal annealing at last.
2. a kind of method that improves dynamic range of quantum dot resonance tunneling diode photodetector according to claim 1 is characterized in that: said dual potential barrier structure layer (6), and by Al
xGa
1-xAs potential barrier (6-1), GaAs quantum well (6-2) are formed, and the x component is 0.33～1.0, and potential barrier (6-1) thickness is 1nm～10nm, quantum well (6-2) thickness 5nm-10nm.
3. a kind of method that improves dynamic range of quantum dot resonance tunneling diode photodetector according to claim 1 is characterized in that: the density of said InAs quantum dot layer (8) is 10
10Cm
-2To 10
11Cm
-2Between.
4. a kind of method that improves dynamic range of quantum dot resonance tunneling diode photodetector according to claim 1, it is characterized in that: said the 3rd GaAs or InGaAs wall (10), visible light is got the 3rd GaAs or InGaAs wall (10) is the GaAs layer, short-wave infrared is got the 3rd GaAs or InGaAs wall (10) is the InGaAs layer, and the 3rd GaAs or InGaAs wall (10) thickness are between 50nm to 350nm.
5. a kind of method that improves dynamic range of quantum dot resonance tunneling diode photodetector according to claim 1, it is characterized in that: the material of said Ohm contact electrode layer (12) is Au and AuGeNi, by steaming the gold back rapid thermal annealing in 30 to 60 seconds under 400-500 ℃ of temperature, gold is from n
+GaAs upper electrode layer (11) infiltrates in the dual potential barrier structure layer (6) always, forms Ohm contact electrode layer (12).
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| CN101335309B true CN101335309B (en) | 2010-08-25 |
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