CN101329488A - Optical frequency and optical intensity modulator used for semiconductor laser - Google Patents
Optical frequency and optical intensity modulator used for semiconductor laser Download PDFInfo
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- CN101329488A CN101329488A CNA2007100117937A CN200710011793A CN101329488A CN 101329488 A CN101329488 A CN 101329488A CN A2007100117937 A CNA2007100117937 A CN A2007100117937A CN 200710011793 A CN200710011793 A CN 200710011793A CN 101329488 A CN101329488 A CN 101329488A
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Abstract
A modulator of light frequency and light intensity to be used on a semiconductor laser can respectively and independently carry out the modulation of the light frequency and the light intensity of the semiconductor laser to be modulated. A modulated light source adopts a three-electrode distributed Bragg reflection semiconductor laser. When in modulation of the light frequency, a polarization beam splitter, a beam splitter and a photoelectric converter in an optical path are used for controlling the current size which is injected onto the modulated semiconductor laser by a drive current controller, thereby achieving the purpose that the light intensity is not changed accordingly during the modulation process of the light frequency. When in modulation of the light intensity, the three-electrode distributed Bragg reflection semiconductor laser is utilized for locking an output light beam on a certain light frequency, closing the photoelectric converter which is connected with the drive current controller and controlling the output current intensity of the drive current controller, thereby solving the problems that the light frequency chirping and the pulsing are weakened during the modulation process of the light intensity. The modulator of the invention is a device which integrates the independent modulation of the light frequency and the light intensity, thereby expanding the using range of the modulator.
Description
Technical field
The present invention is the optical frequency and the light intensity modulator of a kind of semiconductor laser (being designated hereinafter simply as LD), particularly relates to optical frequency modulation that is used for high-precision semiconductor laser heterodyne interference measuring instrument light source and the intensity modulation that is used for the high speed optical communication system signal.
Background technology
Because semiconductor laser (being designated hereinafter simply as LD) volume is little, power-saving, price is low, and wavelength-modulated is easy, thereby obtained using widely.In the semiconductor laser difference interference measuring, adopt the modulation of direct injection current (referring to technology 11 formerly] OsamiSasaki, KazuhideTakahashi, andTakamasaSuzuki; " Sinusoidalphasemodulatinglaserdiodeinterferometerwithafe edbackcontrolsystemtOeliminateextemaldisturbance; " Opt.Eng, 1990,29 (12), 1511-1515) or utilize light beam to go into LD (referring to technology [2] X.F.Wang formerly, X.Wang, F.Qian, GChen, GChen, G.Fang, " PhotothermalmodulationOflaserdiodewavelength:application tOsinusoidalphase-modulatinginterferometerfordisplacemen tmeasurements, " opt/cs﹠amp; LaserTechnology, 1999,31 (8), pp.559-564.) photo-thermal effect of Chan Shenging all can be modulated the optical frequency of LD.These modulation are simple to the modulation of optical frequency, and modulation accuracy is higher, and makes interferometer measurement resolution bring up to nanometer scale.But they also produce modulating action to the output intensity of LD simultaneously, make light intensity shake occur, thus the measuring error of causing.In optical communication system, adopt the internal modulation mode, the intensity of promptly directly modulating injection current can realize the output intensity of LD is modulated (referring to technology [3] Zhao Zisen formerly, " optical fiber communication engineering ").This modulation to light intensity is fairly simple, and modulation accuracy is higher.But under high speed, hypervelocity modulation, this method can produce bigger frequency chirp and pulsation, reduces signal transfer quality, the communication distance of restriction system, even the system that makes can't work.
Summary of the invention
The invention provides a kind of modulator that is used for the semiconductor laser optical frequency and optical intensity.
The technical scheme that adopts is:
A kind of modulator that is used for the semiconductor laser optical frequency and optical intensity, comprise the modulated semiconductor laser that has drive current controller, on modulated semiconductor laser emission light beam working direction, with optical axis O, be equipped with three distribution of electrodes dbr laser diodes of band driving power, its two emission beam direction is relative O2.Between modulated semiconductor laser and three distribution of electrodes dbr laser diodes, be equipped with polarization beam apparatus; The central point O of polarization beam apparatus is on the optical axis O1O2 of above-mentioned two semiconductor lasers.To between the polarization beam apparatus, on the direction of advancing along modulated semiconductor laser emission light beam,, be equipped with first collimation lens, first half-wave plate and Faraday rotator at modulated semiconductor laser successively with optical axis O O2; At three distribution of electrodes dbr laser diodes between the polarization beam apparatus, on the direction of advancing along three distribution of electrodes dbr laser diodes emissions light beam, successively with optical axis O1O2 be equipped with second collimation lens, optoisolator and second half-wave plate and passing on the direction of polarization beam apparatus central point O perpendicular to optical axis O1O2, be equipped with the beam splitter of reflecting surface with respect to the polarization beam apparatus reflecting surface, the central point O line OO ' of the central point O ' of beam splitter and polarization beam apparatus is perpendicular to optical axis O3O2.Receiving plane is arranged with respect to the reflecting surface of beam splitter and export the photoelectric commutator element that is connected on the drive current controller.
Semiconductor laser optical frequency of the present invention and light intensity modulator, its structure such as above-mentioned shown in Figure 1.Comprise: have the modulated semiconductor laser of drive current controller, on the working direction of its light emitted bundle, successively with optical axis O1O2 be equipped with first collimation lens, first half-wave plate, Faraday rotator, polarization beam apparatus.The three distribution of electrodes dbr laser diodes that have driving power, on the working direction of its light emitted bundle, successively with optical axis OO be equipped with second collimation lens, optoisolator, second half-wave plate, polarization beam apparatus.The light shaft coaxle of the output light of modulated semiconductor laser and three distribution of electrodes dbr laser diodes.The reflected light of polarization beam apparatus is divided into two-beam after inciding on the beam splitter, on the electrooptical device that a branch of light incides with drive current controller links to each other of reflection.A branch of light of transmission is as the output light source of this optical frequency, light intensity modulator.
Above said three distribution of electrodes dbr laser diodes, it is made of three relatively independent zones, be respectively gain region, dbr region and phase region, by controlling the position of output power, gain peak wavelength and pectination pattern that trizonal injection current can change laser instrument respectively.
Said driving power is meant and includes programmable control circuit that it has three output terminals, by the size of three output terminal output currents of programmed control.
Said drive current controller provides direct current, AC signal and feeds back signal to modulated semiconductor laser.
Said optoisolator is meant the optical element that can make the light beam one-way transmission.
Said first half-wave plate is meant with second half-wave plate and can makes the mutually perpendicular two bunch polarized lights of light vector produce the position optical element of relative delay (2m/l) n mutually that wherein m is an integer.
Said polarization beam apparatus can be with the orthogonal two-beam in polarization direction separately.That is to say, allow a branch of light transmission, allow another perpendicular Shu Guang of polarization direction be reflected.As polarization splitting prism, polarization parallel flat board etc.
Said Faraday rotator is meant the optical element of making according to faraday's magnetic opticity principle, and it makes the rotation of the polarization direction generation certain angle of incident beam.
Said beam splitter is meant the optical element that incident light can be divided into according to a certain percentage two-beam.Plate parallel flat of analysing light film and anti-reflection film etc. respectively as Amici prism, two sides.
Said electrooptical device is photodiode, photoelectric cell etc.
Structure shown in above-mentioned figure, the size of the output current of controlling and driving power supply and ratio, make that the optical frequency of output light of three distribution of electrodes dbr laser diodes is modulated, the light modulated of outgoing is directional light through second collimation lens collimation, through the optoisolator and second half-wave plate, its polarization direction is identical with the polarization transmission direction of polarization beam apparatus, thereby passes through polarization beam apparatus.Transmitted light is injected in the chamber of the modulated semiconductor laser that has drive current controller through Faraday rotator, first half-wave plate and first collimation lens, makes that the output light of modulated semiconductor laser is locked.The locking polarisation of light direction of modulated semiconductor laser outgoing is identical with the output polarisation of light direction of three distribution of electrodes dbr laser diodes.Its output locking light is directional light through first collimation lens collimation, through first half-wave plate and Faraday rotator, its polarization direction is identical with the reflection of polarization direction of polarization beam apparatus, thereby be polarized beam splitter reflection to beam splitter, beam splitter is divided into two parts with incident light, and the light that a part is reflected is converted to electric signal by electrooptical device and inputs to drive current controller; Export as the light beam of modulated optical frequency or modulated light intensity by the light that beam splitter sees through.
As mentioned above, when carrying out the optical frequency separate modulation, the size of the output current of controlling and driving power supply and ratio, the optical frequency of the output light of three distribution of electrodes dbr laser diodes is modulated continuously, the optical frequency of the output light of modulated semiconductor laser also will change with its variation, thereby the optical frequency that realizes modulated semiconductor laser output light is modulated.Simultaneously, a part of light by beam splitter reflection, be converted to electric signal by photoelectric commutator and feed back to drive current controller, size by the electric current on the modulated semiconductor laser of being injected into of controlling and driving current controller, thereby reach in the optical frequency modulated process, light intensity is not followed the purpose of variation.
When carrying out the light intensity separate modulation, at first close electrooptical device.Pass through driving power, control the size of current and the ratio in three sections zones of three distribution of electrodes dbr laser diodes, make output light be stabilized on a certain optical frequency, the output light of modulated semiconductor laser just is locked on this optical frequency, the output current size of controlling and driving current controller just can realize that the light intensity of modulated semiconductor laser is modulated.Because the output optical frequency is locked, thereby reaches in the intensity modulation process, laser instrument output light frequency is warbled and is pulsed and significantly compressed.
The present invention compares with technology formerly, has outstanding feature:
1, with technology [1 formerly, 2] compare, laser frequency and strength modulator for semiconductor laser of the present invention is told a part of light beam by beam splitter 11, size by photoelectric commutator 12 controlling and driving current controllers 13 injection currents, just adopted the light intensity feedback assembly, make in the optical frequency modulated process, reduced the shake of light intensity;
2, compare with technology [3] formerly, it is three distribution of electrodes dbr laser diodes 9 that laser frequency and strength modulator for semiconductor laser of the present invention has adopted modulated light source, can accomplish optical frequency injection locking, make in the intensity modulation process, alleviate warbling and pulsation problem of optical frequency greatly;
3, with technology [1 formerly, 2,3] compare, laser frequency and strength modulator for semiconductor laser of the present invention can carry out optical frequency modulation and intensity modulation respectively independently, just separate modulation optical frequency and light intensity are integrated on the same device, thereby have enlarged the usable range of modulator.
Description of drawings
Fig. 1 is the structural representation of laser frequency and strength modulator for semiconductor laser of the present invention.
Embodiment:
In device as shown in Figure 1, polarization beam apparatus 5 uses polarization splitting prism, and beam splitter 11 uses Amici prism, and the ratio of the light intensity of the folded light beam of beam splitter 11 and the light intensity of transmitted light beam is 20: 80, and electrooptical device 12 uses photodiode.
The centre wavelength of three distribution of electrodes dbr laser diodes 9 is 1.30 μ m, and modulated semiconductor laser 1 is a MQW semiconductor laser, and its centre wavelength is near 1.30 μ m.
As mentioned above, when carrying out the optical frequency separate modulation, the output current size and the ratio of controlling and driving power supply 10, the output optical frequency of three distribution of electrodes dbr laser diodes 9 is modulated continuously, according to foregoing description, MQW semiconductor laser is as modulated semiconductor laser 1, and the optical frequency of its output light will obtain modulation with its modulation.Simultaneously, beam splitter 11 will be told 20% light and incide on the electrooptical device 12, and the feedback control loop that constitutes by electrooptical device 12 and drive current controller 13 makes the output power of MQW semiconductor laser 1 keep constant.Therefore, the output optical frequency of MQW semiconductor laser 1 follow three distribution of electrodes dbr laser diodes 9 the injection optical frequency modulation and modulate, but luminous power keeps constant, thereby realizes the separate modulation of optical frequency.
When carrying out the light intensity separate modulation, at first close the photo-electric conversion element 12 of photodiode.The size of the output current of controlling and driving power supply 10 and ratio, make the output light centering wavelength 1.30 μ m places of three distribution of electrodes dbr laser diodes 9, according to foregoing description, this moment, the output light of MQW semiconductor laser 1 was locked in this centre wavelength 1.30 μ m places, the injection current of Control current controller 13 makes that the output intensity of MQW semiconductor laser 1 is modulated continuously.Its output average power is 1.5mW, and modulation amplitude is 0.5mW.Because the optical frequency of MQW semiconductor laser 1 is locked by the output optical frequency of three distribution of electrodes dbr laser diodes 9, thereby has obtained the modulated output light signal of beam intensity, and optical frequency remains unchanged.
Claims (1)
1, a kind of modulator that is used for the semiconductor laser optical frequency and optical intensity, comprise the modulated semiconductor laser (1) that has drive current controller (13), it is characterized in that on modulated semiconductor laser (1) emission light beam working direction, same optical axis is equipped with three distribution of electrodes dbr laser diodes (9) of band driving power (10) (O1O2), the emission beam direction of the two is relative, is equipped with polarization beam apparatus (5) between modulated semiconductor laser (1) and three distribution of electrodes dbr laser diodes (9); The central point (O) of polarization beam apparatus (5) is at above-mentioned two semiconductor lasers (1,9) on the optical axis (O1O2), at modulated semiconductor laser (1) between the polarization beam apparatus (5), on the direction of advancing along modulated semiconductor laser (1) emission light beam, same successively optical axis is equipped with first collimation lens (2), first half-wave plate (3) and Faraday rotator (4) (O1O2); At three distribution of electrodes dbr laser diodes (9) between the polarization beam apparatus (5), on the direction of advancing along three distribution of electrodes dbr laser diodes (9) emissions light beam, same successively optical axis is equipped with second collimation lens (8), optoisolator (7) and second half-wave plate (6) (O1O2); Passing on the direction of polarization beam apparatus (5) central point (O) perpendicular to optical axis (O1O2), be equipped with the beam splitter (11) of reflecting surface with respect to polarization beam apparatus (5) reflecting surface, the central point of beam splitter (11) (O ') and polarization beam apparatus (5) central point (O) line (OO ') be perpendicular to optical axis (O1O2), has receiving plane to export the photoelectric commutator element (12) that is connected on the drive current controller (13) with respect to the reflecting surface of beam splitter (11).
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007100117937A CN101329488A (en) | 2007-06-20 | 2007-06-20 | Optical frequency and optical intensity modulator used for semiconductor laser |
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| CNA2007100117937A CN101329488A (en) | 2007-06-20 | 2007-06-20 | Optical frequency and optical intensity modulator used for semiconductor laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105717668A (en) * | 2016-04-29 | 2016-06-29 | 深圳市创鑫激光股份有限公司 | Optical isolator |
| CN106981814A (en) * | 2017-05-31 | 2017-07-25 | 西南大学 | The production method of tunable ultra-wideband microwave frequency comb based on semiconductor laser |
| WO2024027248A1 (en) * | 2022-08-05 | 2024-02-08 | 青岛海信宽带多媒体技术有限公司 | Laser and optical module |
-
2007
- 2007-06-20 CN CNA2007100117937A patent/CN101329488A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105717668A (en) * | 2016-04-29 | 2016-06-29 | 深圳市创鑫激光股份有限公司 | Optical isolator |
| CN106981814A (en) * | 2017-05-31 | 2017-07-25 | 西南大学 | The production method of tunable ultra-wideband microwave frequency comb based on semiconductor laser |
| WO2024027248A1 (en) * | 2022-08-05 | 2024-02-08 | 青岛海信宽带多媒体技术有限公司 | Laser and optical module |
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Open date: 20081224 |