CN101320965A - Broadband low loss sonic surface wave switchable wave filter group - Google Patents
Broadband low loss sonic surface wave switchable wave filter group Download PDFInfo
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- CN101320965A CN101320965A CNA2007101003539A CN200710100353A CN101320965A CN 101320965 A CN101320965 A CN 101320965A CN A2007101003539 A CNA2007101003539 A CN A2007101003539A CN 200710100353 A CN200710100353 A CN 200710100353A CN 101320965 A CN101320965 A CN 101320965A
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Abstract
The invention relates to a wide band and low loss switch surface acoustic wave filter pack, composed of two single-pole knife multithrow switches and a plurality of surface acoustic wave filters made of heavy metal films, wherein one switch is used for respectively connecting the input ends of a plurality of surface acoustic wave filters, and the other switch is used for connecting the output end of the plurality of surface acoustic wave filters, and the two switches are in one to one correspondence. The surface acoustic wave filter adopts the vertical coupled resonance to reduce the low inserting loss. The transducer and the reflection strip with the vertical coupled resonance type structure adopt the heavy metal film, to obtain the wider bandwidth. The substrate material adopts the piezoelectricity materials of lithium niobate and lithium tantalate and the like. The invention provides a wide band (the single channel relative bandwidth 9%) and low loss (smaller than 4 db containing the switch) and higher stop band restrain (larger than 40 db) switch surface acoustic wave filter pack.
Description
Technical field
But the present invention relates to a kind of surface acoustic wave switch filter group that is used for communicating by letter, but particularly a kind of low-loss, wide bandwidth surface acoustic wave switch filter group.
Background technology
The Surface Acoustic Wave Filter group adds that by a plurality of Surface Acoustic Wave Filter matching network and switching circuit combine, and the parts of one tunnel input, multichannel output are arranged.Output signal is by the frequency shunt, and it can be used for carrying out frequency sorting and comprehensive.Be mainly used in the systems such as frequency synthesis, frequency hopping communications.A kind of just Surface Acoustic Wave Filter group that is applied to communication system that the present invention relates to.
A very big shortcoming of prior art is that filter bandwidht is wide inadequately, the insertion loss is big, can realize very low insertion loss (seeing IEEE 1992Ultrasonics Symposium Proceedings PP95-104) by vertical coupled resonance filter that people such as Morita propose, but its reflection grizzly bar and transducer all adopt the common metal aluminum to do, bandwidth of a device is wide not enough, thereby has limited the bandwidth and the number of channel of bank of filters.This is because in the prior art, the result that the reflection grizzly bar of filter and transducer all adopt common metal aluminium film to design and produce.
Adopt aluminium film, generally need 4% even thicker relative thickness, could obtain enough reflection coefficients, and the blocked up meeting of thickness causes following problem: 1) cause the bulk wave scattering, cause the device loss increase; 2) realize difficulty on the technology, especially when operating frequency is low, the device of 30MHz for example, 4% relative thickness just reaches more than 5 microns, and this brings very big difficulty to processes.The thickness thickness low LCL can not obtain bigger reflection coefficient again, causes bandwidth of a device wide inadequately, makes same bandwidth need the channel of greater number to realize, has also increased the volume of assembly.
The vertical coupled resonance filter (seeing IEEE 1992 UltrasonicsSymposium Proceedings PP95-104) that is proposed by people such as Morita comprises 1-2 pattern and two kinds of basic structures of 1-3 pattern.1-2 pattern such as Fig. 2: vertically coupled resonance filter 1 has two interdigital transducers 2 and 3, places the upper surface of piezoelectric substrate 6 along the sonic propagation direction, and reflecting grating array 4 and 5 is positioned over the two ends of interdigital transducer 2 and 3; The 1-3 pattern is as shown in Figure 3: vertically coupled resonance filter 13 has three interdigital transducers 7,8,9, places the upper surface of piezoelectric substrate 12 along the sonic propagation direction, and reflecting grating array 10 and 11 is positioned over interdigital transducer 7,8,9 two ends.In vertical coupled resonance SAW filter 1 and 12, owing to place reflecting grating array, form resonant cavity at the two ends of transducer, sound wave is limited in the resonant cavity, therefore can obtain very low insertion loss.
Summary of the invention
The objective of the invention is to: overcome the defective of prior art, thereby but provide a kind of switch Surface Acoustic Wave Filter assembly that loss is low, bandwidth is wide that inserts.
For achieving the above object, but broadband low loss surface acoustic wave switch filter group provided by the invention, comprise N Surface Acoustic Wave Filter and with the corresponding switch of described Surface Acoustic Wave Filter, described Surface Acoustic Wave Filter adopts vertical coupled resonance formula structure, and this filter adopts the heavy metal film production, and wherein N is at least 1.
In the technique scheme, described and the corresponding switch of Surface Acoustic Wave Filter is two group of one cutter multithrow switch, the Surface Acoustic Wave Filter of described two group of one cutter multithrow switch and N heavy metal making all is produced on the printed circuit board, wherein one group of switch links together the input of N Surface Acoustic Wave Filter, another group switch links together the output of N Surface Acoustic Wave Filter, two groups of switches are corresponding one by one, and N Surface Acoustic Wave Filter constitutes N passage; A described cutter multithrow switch is composed in parallel by an end of N on a circuit monopole single throw switch.
In the technique scheme, described vertical coupled resonance formula filter has two kinds of 1-2 mode filter group and 1-3 mode filters.
In the technique scheme, described 1-2 pattern vertical coupled resonance formula filter (as Fig. 2) is by two interdigital transducers and form all not weightings of interdigital transducer at the reflecting grating array at its two ends.
In the technique scheme, described reflecting grating array adopts short circuit grizzly bar or open circuit reflection grizzly bar, and the synchronizing frequency of described interdigital transducer is 1-1.05 a times of reflecting grating array synchronizing frequency.
In the technique scheme, described 1-3 pattern vertical coupled resonance formula filter (as Fig. 3) is by three interdigital transducers and form all not weightings of interdigital transducer at the reflecting grating array at its two ends.
In the technique scheme, described reflecting grating array adopts short circuit grizzly bar or open circuit reflection grizzly bar, and the synchronizing frequency of described interdigital transducer is 1-1.05 a times of reflecting grating array synchronizing frequency.
In the technique scheme, described reflecting grating array and interdigital transducer adopt the heavy metal film production, and described heavy metal is copper, gold or platinum.
In the technique scheme, described Surface Acoustic Wave Filter, its piezoelectric substrate material is 36 ° of YX-LiTaO
3(promptly 36 ° of rotary Y cuttings cut, and X propagates LiTaO
3, down with), 42 ° of YX-LiTaO
3, 64 ° of YX-LiNbO3 or 41 ° of YX-LiNbO
3
In the technique scheme, a described monopole single throw switch is made up of discrete component PIN diode circuit.
The invention has the advantages that: but wideband acoustic surface-wave switch filter group of the present invention, Surface Acoustic Wave Filter wherein adopts vertical coupled resonance formula structure of using the heavy metal film production on piezoelectric substrate, vertically coupled resonance formula structure can realize low insertion loss, the heavy metal film can obtain than the much bigger reflection coefficient of same thickness aluminium film, to realize wide bandwidth.Compare with the aluminium film of general employing, heavy metal can realize obtaining wideer bandwidth by relatively thin thickness, and (for example the reflection coefficient of heavy metal copper is 3 times of same thickness metallic aluminium approximately, promptly can realize the reflected intensity that the aluminium film of 3 times of thickness can be realized) with copper film, can reduce technology like this and realize difficulty (especially for the low frequency device), can obtain wideer bandwidth simultaneously again; Switch arrays has adopted input and output biswitch battle array structure in the assembly, has reduced the loss of combinational network; Thereby solved the existing in prior technology problem, be easy in assurance realize bigger bandwidth on the basis of processes realization, but a kind of surface acoustic wave switch filter group that is applied to the wide bandwidth in the communication system, low Insertion Loss, small size is provided.
Purpose of the present invention, feature and advantage will be illustrated in conjunction with the accompanying drawings by preferred embodiment.
Description of drawings
But Fig. 1 is the device schematic diagram of broadband low loss surface acoustic wave switch filter group of the present invention;
But Fig. 2 is a kind of chip structure of broadband low loss surface acoustic wave switch filter group of the present invention is the vertical coupled resonance formula of 1-2 pattern structure;
But Fig. 3 is a kind of chip structure of broadband low loss surface acoustic wave switch filter group of the present invention is the vertical coupled resonance formula of 1-3 pattern structure;
But Fig. 3 A is the another kind of chip structure of broadband low loss surface acoustic wave switch filter group of the present invention is the vertical coupled resonance formula of 1-3 pattern structure;
Fig. 4 is the relation of reflection R e and metallization ratio;
Fig. 5 is frequency response curve (41 ° of LiNbO of Y of conventional acoustic surface wave filter
3Last making 1-3 pattern, metal film adopts the structure of aluminium);
Fig. 6 is frequency response curve (Y41 ° of LiNbO of the single Surface Acoustic Wave Filter of a certain example among the present invention
3Last making 1-3 pattern, metal film adopts the structure of copper);
But Fig. 7 is the frequency response curve of the present invention's one wide bandwidth, low-insertion-loss acoustic surface wave switch filter group.
Embodiment
But Fig. 1 is the theory diagram of wideband acoustic surface-wave switch filter group of the present invention, it is made up of a plurality of Surface Acoustic Wave Filter and a cutter multithrow switch, add two groups of switch arrays of drive signal may command switch simultaneously, making at a time has only one of them passage to be opened, other passages are closed, the power of input signal all is added on this passage, to guarantee not exist the loss of combinational network.In order to reduce the two-way propagation loss of filter, wherein single Surface Acoustic Wave Filter chip adopts vertical coupled resonance formula structure.Because bank of filters passband span broad in order to reduce the number of channel, is realized small size, the bandwidth requirement of single filter is very wide, and in order to realize wide as far as possible bandwidth, filter adopts vertical coupled resonance formula structure of heavy metal film production.
With specific embodiment the present invention is further described below in conjunction with the accompanying drawings now.
Embodiment:
In the present embodiment, centre frequency 59MHz, assembly bandwidth 58MHz, the relative bandwidth of assembly is 98%, and the number of channel is 16, and wide for the bandwidth that realizes each passage, loss is little, adopts at 41 ° of LiNbO of substrate Y
3Go up with copper film and make the vertical coupled structure of 1-3 pattern.In concrete operations, can adjust according to actual conditions.
The vertical coupled structure of 1-3 pattern as shown in Figure 3, the Surface Acoustic Wave Filter chip is by piezoelectric substrate 12 and is produced on three interdigital transducers 7,8,9 on the piezoelectric substrate 12 and forms at the metallic reflection grating array 10,11 at its two ends. Interdigital transducer 7,8,9 not weightings, the width of its interdigital electrode and interval are 0.25 wavelength, metallic reflection grating array 10,11 adopts the short circuit grizzly bar, its grill width and be at interval 0.25 wavelength (i.e. metallization than be 0.5), the synchronizing frequency of interdigital transducer is 1-1.05 a times of reflecting grating array synchronizing frequency.But in concrete practical operation, should select the suitable metallization ratio and the multiple of above-mentioned two synchronizing frequencies, to optimize performance of filter according to the characteristic of substrate material and metal film.In the present embodiment, the vertical coupled structure of 1-3 pattern, in order to improve the reflection coefficient of grating array, obtain enough bandwidth, and technology realizes easily during low frequency, its metal film adopts heavy metal copper film, its short circuit metal grating array adopts 0.25 metallization than (as shown in Figure 3A), interdigital transducer 7 ', 8 ', 9 ' synchronizing frequency are reflecting grating array 10 ', 11 ' synchronizing frequency 1.035 times, have taked the secondary cascade, and band is outer to be suppressed to improve.Compare with common aluminium film, the tack of copper film is poorer than the aluminium film, and copper film is easier to oxidation, so technology is different when making copper film.Need to plate earlier the metal that one deck adheres to easily before being mainly reflected in copper plating film, as nickel, chromium, make that the metal orientation is consistent, reduce resistance, thickness is 5～30 dusts.Copper plating film again on adhesion metal then, its bake out temperature can not too high (room temperature get final product), or dry under vacuum state, otherwise copper film will oxidation.
The piezoelectric substrate of above-mentioned Surface Acoustic Wave Filter chip can also be 36 ° of YX-LiTaO
3, 42 ° of YX-LiTaO
3, 64 ° of YX-LiNbO
3Or 41 ° of YX-LiNbO
3
Fig. 5 is a kind of amplitude frequency curve of vertical coupled resonance filter of common metal making.Adopt chip structure shown in Figure 3, substrate material adopts 41 ° of Y-X LiNbO3, and transducer and reflecting grating array adopt the aluminium film production, centre frequency 284.3MHz, and bandwidth is 21.0MHz, relative thickness 4%, relative bandwidth 7.4%, the insertion loss is 3.66dB;
Fig. 6 is the amplitude frequency curve that adopts the filter of heavy metal copper film production in the present embodiment.Adopt chip structure shown in Figure 3, substrate material adopts 41 ° of Y-X LiNbO
3,, transducer and reflecting grating array are made of copper film, centre frequency 31.09MHz, and bandwidth is 2.81MHz, relative thickness 1.4%, relative bandwidth 9%, the insertion loss is 3.2dB.
From the frequency response curve of above-mentioned 2 kinds of devices as can be seen, device in the present embodiment is owing to adopt copper film, though only used 1.4% relative thickness, but realized 9% relative bandwidth, compare (4% relative thickness is realized 7.4% relative bandwidth) with common aluminium film and have remarkable advantages.
But Fig. 7 is the frequency response curve (embodiment) of the present invention one broadband, low-insertion-loss acoustic surface wave switch filter group, compare present embodiment and common prior art, the result shows, but switch Surface Acoustic Wave Filter group of the present invention both can realize low insertion loss (＜4dB), can realize bigger bandwidth (single passage relative bandwidth about 9%) again, higher stopband suppresses (greater than 40dB), and greatly reduces technology difficulty (as long as thickness is 1.4% relatively) when low frequency again.
Principle of the present invention is as follows:
But the reflection coefficient tabular form is: R
m(h/ λ)+R
e, first binomial is represented the contribution of mechanics load and the contribution of piezoelectricity short-circuiting effect respectively, and λ is a wavelength, and h is a thickness of metal film.1) when metal film is very thin, first (contribution of mechanics load) can be ignored, reflection coefficient is mainly determined by Re, at this moment, the relation of reflection coefficient and metallization ratio is metallizing as shown in Figure 4 than being 0.25 o'clock, and it is maximum that Re reaches, be that reflection coefficient reaches maximum Rmax, 2) when metal film is thicker, can not ignore for first, reflection coefficient is determined jointly by the contribution of mechanics load and the contribution of piezoelectricity short-circuiting effect, increase thickness this moment, select suitable metallization ratio, can obtain than situation 1) in the bigger reflection coefficient of Rmax, so, obtain bigger reflection coefficient, generally realize by increasing thickness.And need bigger reflection coefficient when obtaining wide bandwidth just with vertical coupled structure.
(for example the reflection coefficient of heavy metal copper is 3 times of same thickness metallic aluminium approximately because the reflection coefficient of heavy metal is several times of aluminium of same thickness, promptly can realize the reflected intensity that the aluminium film of about 3 times of thickness is reached) with copper film, therefore utilize relatively thin heavy metal film can realize bigger reflection coefficient, adopt the heavy metal film to make that vertical coupled structure just can solve prior art and cause the bulk wave scattering, cause device loss to increase and technology realizes the problem of difficulty because thickness is excessive.
Claims (10)
- But 1, a kind of broadband low loss surface acoustic wave switch filter group, comprise N Surface Acoustic Wave Filter and with the corresponding switch of described Surface Acoustic Wave Filter, described Surface Acoustic Wave Filter adopts vertical coupled resonance formula structure, and this filter adopts the heavy metal film production, and wherein N is at least 1.
- But 2, by the described broadband low loss surface acoustic wave of claim 1 switch filter group, it is characterized in that, described and the corresponding switch of Surface Acoustic Wave Filter is two group of one cutter multithrow switch, the Surface Acoustic Wave Filter of described two group of one cutter multithrow switch and N heavy metal making all is produced on the printed circuit board, wherein one group of switch links together the input of N Surface Acoustic Wave Filter, another group switch links together the output of N Surface Acoustic Wave Filter, two groups of switches are corresponding one by one, and N Surface Acoustic Wave Filter constitutes N passage; A described cutter multithrow switch is composed in parallel by an end of N on a circuit monopole single throw switch.
- But 3,, it is characterized in that described vertical coupled resonance formula filter comprises 1-2 pattern vertical coupled resonance formula filter and the vertical coupled resonance formula of 1-3 pattern filter by the described broadband low loss surface acoustic wave of claim 2 switch filter group.
- But, it is characterized in that the vertical coupled resonance formula of described 1-2 pattern filter is by two interdigital transducers and form all not weightings of interdigital transducer at the reflecting grating array at its two ends 4, by the described broadband low loss surface acoustic wave of claim 3 switch filter group.
- But, it is characterized in that the vertical coupled resonance formula of described 1-3 pattern filter is by three interdigital transducers and form all not weightings of interdigital transducer at the reflecting grating array at its two ends 5, by the described broadband low loss surface acoustic wave of claim 3 switch filter group.
- But 6, by claim 4 or 5 described broadband low loss surface acoustic wave switch filter groups, it is characterized in that, described reflecting grating array adopts short circuit grizzly bar or open circuit reflection grizzly bar, and the synchronizing frequency of described interdigital transducer is 1-1.05 a times of reflecting grating array synchronizing frequency.
- But 7,, it is characterized in that by the described broadband low loss surface acoustic wave of claim 1 switch filter group, described Surface Acoustic Wave Filter, the vertical coupled resonance formula filter in its chip structure adopts the multi-stage series connection structure.
- But by the described broadband low loss surface acoustic wave of claim 3 switch filter group, it is characterized in that 8, described reflecting grating array and interdigital transducer adopt the heavy metal film production, described heavy metal is copper, gold or platinum.
- But 9,, it is characterized in that by the described broadband low loss surface acoustic wave of claim 1 switch filter group, described Surface Acoustic Wave Filter, its piezoelectric substrate material is Y36 ° of LiTaO 3, Y42 ° LiTaO 3, Y64 ° LiNbO 3Or Y41 ° of LiNbO 3
- But 10,, it is characterized in that a described monopole single throw switch is made up of discrete component PIN diode circuit by the described broadband low loss surface acoustic wave of claim 1 switch filter group.
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| CN2007101003539A CN101320965B (en) | 2007-06-08 | 2007-06-08 | Broadband low loss sonic surface wave switchable wave filter group |
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| CN2007101003539A CN101320965B (en) | 2007-06-08 | 2007-06-08 | Broadband low loss sonic surface wave switchable wave filter group |
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| CN101320965A true CN101320965A (en) | 2008-12-10 |
| CN101320965B CN101320965B (en) | 2010-10-06 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452013B (en) * | 2009-01-04 | 2012-07-18 | 信息产业部通信计量中心 | Switch filter array box system |
| CN104320104A (en) * | 2014-10-25 | 2015-01-28 | 中国电子科技集团公司第二十六研究所 | Surface acoustic wave filter assembly shared by transmitting channel and receiving channel |
| CN110783673A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-channel interdigital adjustable filter based on MEMS switch |
| CN112683975A (en) * | 2020-12-18 | 2021-04-20 | 天津理工大学 | Interdigital microelectrode array electrochemical sensor, preparation method, application and special test box |
| CN114204914A (en) * | 2022-02-21 | 2022-03-18 | 中国电子科技集团公司信息科学研究院 | Surface acoustic wave transverse coupling resonator for gas detection |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4120549B2 (en) * | 2003-01-09 | 2008-07-16 | 株式会社村田製作所 | Surface acoustic wave filter |
| CN1561008A (en) * | 2004-03-04 | 2005-01-05 | 北京中科飞鸿科技有限公司 | Multiplex filter set |
| CN100502239C (en) * | 2004-07-13 | 2009-06-17 | 中国科学院声学研究所 | An acoustic surface wave duplexer |
-
2007
- 2007-06-08 CN CN2007101003539A patent/CN101320965B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452013B (en) * | 2009-01-04 | 2012-07-18 | 信息产业部通信计量中心 | Switch filter array box system |
| CN104320104A (en) * | 2014-10-25 | 2015-01-28 | 中国电子科技集团公司第二十六研究所 | Surface acoustic wave filter assembly shared by transmitting channel and receiving channel |
| CN110783673A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-channel interdigital adjustable filter based on MEMS switch |
| CN112683975A (en) * | 2020-12-18 | 2021-04-20 | 天津理工大学 | Interdigital microelectrode array electrochemical sensor, preparation method, application and special test box |
| CN114204914A (en) * | 2022-02-21 | 2022-03-18 | 中国电子科技集团公司信息科学研究院 | Surface acoustic wave transverse coupling resonator for gas detection |
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|---|---|
| CN101320965B (en) | 2010-10-06 |
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