CN101320103A - Production method of image sensor microlens structure - Google Patents
Production method of image sensor microlens structure Download PDFInfo
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- CN101320103A CN101320103A CNA2007101082738A CN200710108273A CN101320103A CN 101320103 A CN101320103 A CN 101320103A CN A2007101082738 A CNA2007101082738 A CN A2007101082738A CN 200710108273 A CN200710108273 A CN 200710108273A CN 101320103 A CN101320103 A CN 101320103A
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Abstract
The invention discloses a making method for an image sensor microlens structure. Firstly, a semiconductor substrate which at least contains a flat layer is provided; and the first photoetching process is carried out, and the first group of microlens projections are formed on the flat layer; then the first roasting technology is carried out to form the first group of microlens structures, and the first surface treatment is carried out to harden (harden) the surface of the first group of microlens structures; the second photoetching technology is carried out and the second group of microlens projections are formed on the flat layer, and then the second roasting technology is carried out and the second microlens structures are formed.
Description
Technical field
The present invention relates to the method for making of image sensor microlens structure, refer to the micro-lens array manufacturing method of image sensor especially.
Background technology
Along with scanning product, digital camera, electronics constantly develop and grow up, demand to image sensing element on the market continues to increase thereupon, image sensor commonly used at present includes electric charge coupling sensor (charge coupled device, CCD sensor) and complement metal oxide semiconductor image sensor (complementary metal oxide semiconductor, CMOS image sensor, CIS) two big classes.Lenticule (micro-lens) then is to be made on this image sensor, is used for controlling the direction that light is advanced, so that the incident light polymerization is incident to optics sensing element such as light sensitive diode (photodiode) etc., uses the light sensitivity that improves image sensor.
In known technology, lenticule is to adopt photosensitive photoresist as material, after overbaking (melting bake) technology, forms the required smooth curved surface of lenticule.See also Fig. 1 to Fig. 3, Fig. 1 to Fig. 3 is the synoptic diagram of known method for fabricating microlens array.See also Fig. 1, the semiconductor-based end 10 at first is provided, be formed with photosensitive region 12 and photo-sensitive cell 14 at semiconductor-based the end 10, for example charge-coupled device (CCD) (CCD) or CMOS (Complementary Metal Oxide Semiconductor) (CMOS) image inductor etc.Other has the dielectric layer 16 of printing opacity to be formed at semiconductor-based the end 10; Then be formed with colour filter array 18 on the dielectric layer 16, each the chromatic filter layer unit in the colour filter array 18 all corresponds respectively to photosensitive region 12, still has the flatness layer 20 of printing opacity to be formed on the colour filter array 18 in addition.And as shown in Figure 1, on flatness layer 20, form the microlens material layer 30 that constitutes by photoresist subsequently.
See also Fig. 2 and Fig. 3.Next, utilize known photoetching process patterning microlens material layer 30, and form array 34, and each photoresist projection 32 corresponds respectively to chromatic filter layer unit and photosensitive region 12 with a plurality of photoresist projections 32.Carry out baking process subsequently, will be after 32 fusions of photoresist block solidify again, the array of the microlens structure 36 of formation semicircle sphere as shown in Figure 3, and 36 all spacings 40 of each microlens structure and 14 rough equating of photo-sensitive cell.
Yet, cooperate the downsizing of resolution (resolution) lifting, Pixel Dimensions and photo-sensitive cell 14, circuit, microlens structure 36 has also been produced the requirement of zero spacing (zero-gap).But according to known lenticule method for making, the spacing 40 of microlens structure 36 is too small, will cause microlens structure 36 that overlapping in twos (overlap) takes place in baking process and produces the phenomenon of bridge-shaped object (bridge).That is to say that known lenticule method for making can't obtain to meet the microlens structure 36 that existing zero spacing requires.
Therefore, those skilled in the art propose many solutions, and one group of corresponding checkerboard type (checkerboard) mask 50,52 that U.S. Patent Application Publication No. US 2003/0111700 A1 is as shown in Figure 4 provided reaches the requirement of zero spacing.See also Fig. 5 and Fig. 6, at first use mask 50 patterning microlens material layers (figure does not show), to form the first group for photo etching glue projection 60, carry out the baking process first time immediately, to form first group of microlens structure 62 as shown in Figure 6.See also Fig. 7 and Fig. 8, then use mask 52 another patterning microlens material layers (figure does not show),, promptly carry out the baking process second time subsequently to form the second group for photo etching glue projection 64, forming second group of microlens structure 66 as shown in Figure 8, and finish the making of microlens array.
It should be noted that, because dwindling of Pixel Dimensions, checkerboard type mask 50,52 is respectively high-order (high grade) mask of the accurate and small microlens pattern that comprises, increase the considering of cost except that having, also be increased in the possibility of steps failures such as exposure, development and etching simultaneously and influence yield rate.In addition, even when utilizing the corresponding checkerboard type mask of this kind 50,52 to make microlens structures, still can't avoid first group of microlens structure 62 to be subjected to Temperature Influence in the baking process and to produce bridge-shaped objects 68 fully with adjacent second group of microlens structure 66 in the second time.So, also there is the technician to utilize the baking process of three times the coating of microlens material layer, photoetching process and different temperatures respectively, obtaining the microlens structure array of zero spacing, but this method was both complicated and still can't avoid not microlens structure on the same group to be subjected to Temperature Influence in other baking process fully.Therefore how can when simplifying technology, still improve the making achievement of microlens structure array, still a difficult problem for needing to solve.
Summary of the invention
Therefore, the present invention provides the method for making of image sensor microlens structure in this, in order to improve the making result of microlens structure array when simplifying technology.
According to claim of the present invention, a kind of method for making of image sensor microlens structure is provided, this method at first provides the semiconductor-based end that includes flatness layer at least.Next carry out first photoetching process, form first group of lenticule projection on this flatness layer surface; Carry out first baking process subsequently, form first group of microlens structure on this flatness layer surface.And then carry out first surface and handle, to solidify the surface of (harden) this first group of microlens structure.First surface carries out second photoetching process after handling, and forms second group of lenticule projection on this flatness layer surface; Carry out second baking process subsequently, form second group of microlens structure on this flatness layer surface.
According to claim of the present invention, other provides a kind of method for making of image sensor microlens structure, and this method at first provides the semiconductor-based end that includes flatness layer at least.Carry out first photoetching process subsequently, utilize the first checkerboard type mask to form first group of lenticule projection, carry out first baking process immediately, form first group of microlens structure on this flatness layer surface on this flatness layer surface.Next carry out surface treatment, to solidify the surface of (harden) this first group of microlens structure.Carry out second photoetching process afterwards, this first checkerboard type mask spacing unit of displacement and form second group of lenticule projection on this flatness layer surface.Carry out second baking process at last, form second group of microlens structure on this flatness layer surface.
According to the method for making of utilizing image sensor microlens structure provided by the present invention, make microlens structure to obtain the microlens array of zero spacing by grouping.In addition, after first group of microlens structure forms, promptly carrying out first surface handles, to solidify the surface of this first group of microlens structure, make this microlens structure can in follow-up second group of lenticular manufacturing process, not be affected, and can avoid first group of microlens structure and second group of microlens structure to produce bridge-shaped object, and improve the integrality of microlens structure profile.
Description of drawings
Fig. 1 to Fig. 3 is the synoptic diagram of known method for fabricating microlens array.
Figure 4 shows that one group of corresponding checkerboard type (checkerboard) mask that U.S. Patent Application Publication No. US 2003/0111700 A1 is provided.
Fig. 5 to Fig. 8 is the synoptic diagram of another known lenticule method for making.
Fig. 9 to Figure 16 is first preferred embodiment of the method for making of image sensor microlens structure provided by the present invention.
Figure 17 to Figure 19 is second preferred embodiment of the method for making of image sensor microlens structure provided by the present invention.
Description of reference numerals
10 photosensitive regions of the semiconductor-based ends 12
14 photo-sensitive cells, 16 dielectric layers
18 colour filter arrays, 20 flatness layers
30 microlens material layers, 32 photoresist projection
34 arrays, 36 microlens structures
40 spacings, 50,52 checkerboard type masks
62 first groups of microlens structures of 60 first group for photo etching glue projections
66 second groups of microlens structures of 64 second group for photo etching glue projections
The 100 semiconductor-based ends of 68 bridge-shaped objects
102 image sensors, 104 dielectric layers
106 colour filter arrays, 108 flatness layers
110 first microlens material layers, 112 first checkerboard type mask
116 first groups of microlens structures of 114 first groups of lenticule projections
120 surface treatments, 130 second microlens material layers
134 second groups of lenticule projections of 132 second checkerboard type masks
136 second groups of microlens structure 140 microlens arrays
The 200 semiconductor-based ends of 150 grooves
202R, 202G, 202B image sensor 204 dielectric layers
206 colour filter array 206R, 206G, 206B colored light-filtering units
208 flatness layers, 210 microlens arrays
Second group of microlens structure of first group of microlens structure 210G of 210R
The 3rd group of microlens structure 220 first surfaces of 210B are handled
222 second surfaces are handled
Embodiment
See also Fig. 9 to Figure 17, Fig. 9 to Figure 17 is first preferred embodiment of the method for making of image sensor microlens structure provided by the present invention.As shown in Figure 9, at first provide the semiconductor-based end 100, be formed with a plurality of image sensors 102 at semiconductor-based the end 100, for example charge-coupled device (CCD) (CCD) or CMOS (Complementary Metal Oxide Semiconductor) (CMOS) image inductor etc.Other has the dielectric layer 104 of printing opacity to be formed at at semiconductor-based the end 100; Then be formed with colour filter array 106 on the dielectric layer 104, each chromatic filter layer unit in the colour filter array 106 all corresponds respectively to image sensor 102, still have the flatness layer 108 of printing opacity to be formed on the colour filter array 106 in addition, the thickness of flatness layer 108 is about 5000 dusts (angstrom).And as shown in Figure 9, on flatness layer 108, form photoresist for example, the first microlens material layer 110 that is constituted subsequently by photosensitive material.
See also Fig. 9 and Figure 10.Next utilize the first checkerboard type mask 112 to carry out first photoetching process, the patterning first microlens material layer 110 and form as shown in figure 10 first group of lenticule projection 114 on flatness layer 108 surface.
See also Figure 11.Carry out first baking process, first group of lenticule figure of fusion projection 114, and form first group of microlens structure 116 on flatness layer 108 surfaces.After treating that first group of microlens structure 116 forms, carry out surface treatment 120 immediately, to solidify the surface of (harden) first group of microlens structure 116.And have the surface of curing, so can avoid being affected in all the other subsequent techniques through first group of microlens structure 116 of surface treatment 120.
In a preferred embodiment of the invention, surface treatment 120 can include photoresist (de-scum) processing, ultraviolet light polymerization is handled (UV curing), bleaching (bleach) processing or chemical agent and handled or the like.For instance, treatment with ultraviolet light can utilize ultraviolet source to shine first group of lenticule 116 surface; Bleaching is handled and then can be utilized general stepper (stepper) to be exposed in first group of lenticule 116 surface, handles to finish bleaching.The chemical agent processing then utilizes the N-N-methyl 2-pyrrolidone N-, and (N-Methyl-2-Pyrrolidone NMP) handles first group of lenticule 116 surface with acetone solution such as (acetone), to solidify the surface of first group of group lenticule 116.And wherein go photoresist to handle, then be to utilize to contain oxygen plasma first group of lenticule 116 surface handled.
See also Figure 12 and Figure 13.Next form the second microlens material layer 130 on flatness layer 108 surfaces, carry out second photoetching process subsequently, utilize second checkerboard type mask 132 patternings, the second microlens material layer 130 and the formation second group of lenticule projection 134 as shown in figure 13.
It should be noted that in a preferred embodiment of the invention the first checkerboard type mask 112 is identical mask with the second checkerboard type mask 132: also be about to the first checkerboard type mask, 112 displacement interval units (pitch), just can use it in second photoetching process.In other words, two groups of lenticule projections of first group of lenticule projection 114 and this 134 are for differing two array patterns of spacing unit.
See also Figure 14.Carry out second baking process subsequently, second group of lenticule projection 134 of fusion, and at second group of microlens structure 136 of flatness layer 108 surface formation, and the microlens array 140 of acquisition zero spacing.In addition,, and have the surface of curing,, also can not influence the surface profile of first group of microlens structure 116 even therefore the temperature of second baking process is identical with the temperature of first baking process because first group of microlens structure 116 passed through surface treatment.
See also Figure 15 and Figure 16.Because first group of microlens structure 116 and second group of microlens structure 136 have equal height, therefore may make microlens structure array 140 produce as the effect of minute surface, the reflectance (reflectivity) of raising light and minimizing incident light.For avoiding the problems referred to above, except that the first microlens material layer 110 that can utilize different-thickness and the second microlens material layer 130, also can be in carrying out surface treatment 120 go photoresist to handle the time, by parameters such as adjusting process times, and when solidifying first group of lenticule 116 surface etching flatness layer 108, and between first group of microlens structure 116, forming as shown in figure 15 groove 150, the degree of depth of groove 150 is 200～1000 dusts.Beginning is carried out the making of second group of microlens structure subsequently, forms second group of microlens structure in groove 150, because this step is identical with abovementioned steps, does not therefore repeat them here.As shown in figure 16, by groove 150 degree of depth that in going the photoresist processing, produced, can adjust the difference in height of first group of microlens structure 116 and second group of microlens structure 136, obtain uneven surface, therefore reduce the reflectance of incident ray, relatively improved the light sensitivity of image sensor 102.
In sum, the method for making of the image sensor microlens structure that this first preferred embodiment is provided, utilize the displacement of same checkerboard type mask to make microlens array, this microlens array then includes the microlens structure of two groups of corresponding patterns of tool and zero spacing.The method that forms microlens structure with the mask that needs two corresponding patterns of tool in the known technology is compared, and can save a mask.Because the microlens pattern mask is the high-order mask of precision and the small microlens pattern of tool, so method that this preferred embodiment provides can effectively reduce cost.In addition, this method that good embodiment provided is to carry out surface treatment immediately after forming first group of microlens structure 116, to solidify the surface of first group of microlens structure 116, the group microlens structure 116 of winning can be affected in the manufacturing process of follow-up second group of microlens structure 136, and can avoid producing bridge-shaped object between first group of microlens structure 116 and second group of microlens structure 136, and improve the integrality of microlens structure surface profile.Briefly, the method that this first preferred embodiment is provided, can by the identical checkerboard type mask of displacement with carry out the surface-treated method, when simplifying technology and reducing cost, reach the requirement of microlens structure zero spacing, and promote the integrality of microlens structure surface profile.
In addition, in response to the light sensitivity requirement of image sensor to red, green and blue different wave length light, the method for making of image sensor microlens structure provided by the present invention also can be at the microlens structure of the identical or different height of R/G/B three kinds of image sensor groupings making tool.See also Figure 17 to Figure 19, Figure 17 to Figure 19 is second preferred embodiment of the method for making of image sensor microlens structure provided by the present invention.As shown in figure 17, at first provide the semiconductor-based end 200, be formed with a plurality of image sensor 202R, 202G, 202B at semiconductor-based the end 200, for example charge-coupled device (CCD) (CCD) or CMOS (Complementary Metal Oxide Semiconductor) (CMOS) image inductor etc.Other has the dielectric layer 204 of printing opacity to be formed at at semiconductor-based the end 200; Then be formed with colour filter array on the dielectric layer 204, colored light-filtering units 206R in the colour filter array, 206G, 206B correspond respectively to image sensor 202R, 202G, 202B, still have the flatness layer 208 of printing opacity to be formed on the colour filter array 206 in addition, the thickness of flatness layer 208 is about 5000 dusts (angstrom).
Please continue to consult Figure 17.Next carry out first photoetching process, utilize the first checkerboard type mask (figure does not show) to form first group of lenticule projection (figure does not show) on flatness layer 208 surfaces; Carry out first baking process subsequently, the first group of microlens structure 210R that forms corresponding to colored light-filtering units 206R on flatness layer surface 208.Because the technology of microlens structure is the technology that is same as above-mentioned first group of microlens structure or second group of microlens structure, so do not repeat them here.In like manner, the technology of second group of microlens structure 210G and the 3rd group of microlens structure 210B below is also omitted.After treating that first group of microlens structure 210R forms, carry out first surface immediately and handle 220, to solidify the surface of first group of microlens structure 210R.
See also Figure 18.Carry out second photoetching process subsequently, utilize the second checkerboard type mask (figure does not show) to form second group of lenticule projection (figure does not show) at flatness layer 208, and carry out second baking process, form second group of microlens structure 210G corresponding to colored light-filtering units 206G on flatness layer 208 surfaces.Similarly, after forming second group of microlens structure 210G, carry out second surface immediately and handle 222, to solidify the surface of second group of microlens structure 210G.
See also Figure 19.Carry out the 3rd photoetching process at last, utilize the 3rd checkerboard type mask (figure does not show) to form the 3rd group of lenticule projection (figure does not show) at flatness layer 208, and carry out second baking process, form the 3rd group of microlens structure 210B on flatness layer 208 surface, and finish the making of microlens array 210 corresponding to colored light-filtering units 206B.
222 include photoresist (de-scum) processing, ultraviolet light polymerization processing (UV curing), bleaching (bleach) processing or chemical agent processing or the like in first surface processing 220 and the second surface group.As previously mentioned, treatment with ultraviolet light can utilize ultraviolet source to shine first group of microlens structure 210R and second group of microlens structure 210G surface; Bleaching is handled and then can be utilized general stepper (stepper) that first group of microlens structure 210R and second group of microlens structure 210G surface are exposed, and handles to finish bleaching.The chemical agent processing then includes the N-N-methyl 2-pyrrolidone N-, and (N-Methyl-2-Pyrrolidone is NMP) with acetone solution such as (acetone).Going photoresist to handle, then is to utilize to contain oxygen plasma first group of microlens structure 210R and second group of microlens structure 210G surface are handled.
In like manner, when going photoresist to handle, can be by parameters such as adjusting process times, and when solidifying first group of microlens structure 210R or second group of microlens structure 210G surface etching flatness layer 208, and in flatness layer, form a plurality of grooves (figure does not show), and the degree of depth of groove is 200～1000 dusts.This groove can make microlens array 210 have uneven surface, and can reduce reflectivity, relatively promotion feeling luminosity in order to adjust the height of second group of microlens structure 210G or the 3rd group of microlens structure 210B.Then the beginning is carried out the making of follow-up microlens structure.In addition, this first group of microlens structure 210R that second preferred embodiment provided, second group of microlens structure 210G, not limit by this instructions and diagram with height, size and the production order of the 3rd group of microlens structure 210B.
According to second preferred embodiment provided by the present invention, carry out first surface processing 220 to solidify the surface of first group of microlens structure 210R owing to make between first group of microlens structure 210R and second group of microlens structure 210G of making; Carry out second surface processing 222 between the 3rd group of microlens structure 210B to solidify the surface of second group of microlens structure 210G and make second group of microlens structure 210G and make, therefore respectively organize the influence that microlens structure will can not be subjected to other group lenticule technologies, and in subsequent technique, produce bridge-shaped object, so can guarantee respectively to organize the integrality of outline of microlens structure.In addition, also can handle by removing photoresist, on flatness layer 208, form groove, in order to adjust the height of microlens structure, not only can reduce the reflectance of light, more can adjust the technological parameter and the depth of groove of going photoresist to handle, make the microlens structure 210 that meets the product specification requirement according to the light sensitivity requirement of image sensor 202 at different wave length light.
In sum, the method for making of utilizing image sensor microlens structure provided by the present invention is made the microlens array that microlens structure obtains zero spacing by grouping.In addition, after preceding group microlens structure forms, promptly carry out surface treatment, to solidify the surface of this group group microlens structure, make this microlens structure can in the manufacturing process of follow-up microlens structure, not be affected, and can avoid producing between two groups of microlens structures bridge-shaped object, more guaranteed respectively to organize the integrity degree of microlens structure profile.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (31)
1. the method for making of an image sensor microlens structure includes:
The semiconductor-based end is provided, and this semiconductor-based end, include flatness layer at least;
Carry out first photoetching process, form first group of lenticule projection on this flatness layer surface;
Carry out first baking process, form first group of microlens structure on this flatness layer surface;
Carry out first surface and handle, to solidify the surface of this first group of microlens structure;
Carry out second photoetching process, form second group of lenticule projection on this flatness layer surface; And
Carry out second baking process, form second group of microlens structure on this flatness layer surface.
2. method for making as claimed in claim 1, wherein this first photoetching process also comprises:
Form the first microlens material layer on this flatness layer surface; And
Carry out this first photoetching process, utilize this first microlens material layer of the first checkerboard type mask patterning and form this first group of lenticule projection.
3. method for making as claimed in claim 2, wherein this second photoetching process also comprises:
Form the second microlens material layer on this flatness layer surface; And
Carry out this second photoetching process, utilize this second microlens material layer of the second checkerboard type mask patterning and form this second group of lenticule projection.
4. method for making as claimed in claim 3, wherein this first checkerboard type mask is identical mask with this second checkerboard type mask.
5. method for making as claimed in claim 4, wherein second group of lenticule projection of this first group of lenticule projection and this is corresponding two array patterns that differ spacing unit.
6. method for making as claimed in claim 1, wherein this first surface pack processing contains the photoresist processing, ultraviolet light polymerization is handled, bleached and handle or the chemical agent processing.
7. method for making as claimed in claim 6, wherein this goes the photoresist pack processing to contain oxygen plasma.
8. method for making as claimed in claim 7, wherein this contain oxygen plasma more in order to this flatness layer of etching between this first group of microlens structure, to form a plurality of grooves.
9. method for making as claimed in claim 8, wherein the degree of depth of this groove is 200～1000 dusts.
10. method for making as claimed in claim 6, wherein this chemical agent pack processing contains N-N-methyl 2-pyrrolidone N-and acetone.
11. method for making as claimed in claim 1, wherein the height of this first group of microlens structure is identical with the height of this second group of microlens structure.
12. method for making as claimed in claim 1, wherein the height of the height of this first group of microlens structure and this second group of microlens structure is inequality.
13. method for making as claimed in claim 1, wherein this first group of microlens structure and this second group of microlens structure correspond respectively to the suprabasil colour filter array of this semiconductor.
14. method for making as claimed in claim 1 also comprises second surface and handles, and is carried out at after this second baking process, in order to solidify the surface of this second group of microlens structure.
15. method for making as claimed in claim 14, wherein this second surface pack processing contains the photoresist processing, ultraviolet light polymerization is handled, bleached and handle or the chemical agent processing.
16. method for making as claimed in claim 14 also comprises the formation step of the 3rd group of microlens structure, is carried out at after this second surface handles, this step includes:
Form the 3rd microlens material layer on this flatness layer surface;
Form the 3rd group of lenticule projection on this flatness layer surface; And
Carry out the 3rd baking process, to form the 3rd group of microlens structure on this flatness layer surface.
17. method for making as claimed in claim 16, wherein this first group of microlens structure, this second group of microlens structure are identical with the height of the 3rd group of microlens structure.
18. method for making as claimed in claim 16, wherein the height of this first group of microlens structure, this second group of microlens structure and the 3rd group of microlens structure is inequality.
19. method for making as claimed in claim 16, wherein this first group of microlens structure, this second group of microlens structure, correspond respectively to the suprabasil colour filter array of this semiconductor with the 3rd group of microlens structure.
20. the method for making of an image sensor microlens structure includes:
The semiconductor-based end is provided, and this semiconductor-based end, include flatness layer at least;
Carry out first photoetching process, utilize the first checkerboard type mask to form first group of lenticule projection on this flatness layer surface;
Carry out first baking process, form first group of microlens structure on this flatness layer surface;
Carry out surface treatment, to solidify the surface of this first group of microlens structure;
Carry out second photoetching process, this first checkerboard type mask spacing unit of displacement and form second group of lenticule projection on this flatness layer surface; And
Carry out second baking process, form second group of microlens structure on this flatness layer surface.
21. method for making as claimed in claim 20, wherein this first photoetching process also comprises:
Form the first microlens material layer on this flatness layer surface; And
Carry out this first photoetching process, utilize this this first microlens material layer of first checkerboard type mask patterning and form this first group of lenticule projection.
22. method for making as claimed in claim 20, wherein this second photoetching process also comprises:
Form the second microlens material layer on this flatness layer surface; And
Carry out this second photoetching process, utilize this this second microlens material layer of first checkerboard type mask patterning and form this second group of lenticule projection.
23. method for making as claimed in claim 20, wherein second group of lenticule projection of this first group of lenticule projection and this is corresponding two array patterns that differ spacing unit.
24. method for making as claimed in claim 20, wherein this surface treatment includes the photoresist processing, ultraviolet light polymerization is handled, bleached and handle or the chemical agent processing.
25. method for making as claimed in claim 24, wherein this goes the photoresist pack processing to contain oxygen plasma.
26. method for making as claimed in claim 25, wherein this contain oxygen plasma more in order to this flatness layer of etching between this first group of microlens structure, to form a plurality of grooves.
27. method for making as claimed in claim 26, wherein the degree of depth of this groove is 200～1000 dusts.
28. method for making as claimed in claim 24, wherein this chemical agent pack processing contains N-N-methyl 2-pyrrolidone N-and acetone.
29. method for making as claimed in claim 20, wherein the height of this first group of microlens structure is identical with the height of this second group of microlens structure.
30. method for making as claimed in claim 20, wherein the height of the height of this first group of microlens structure and this second group of microlens structure is inequality.
31. method for making as claimed in claim 20, wherein this first group of microlens structure and this second group of microlens structure correspond respectively to the suprabasil colour filter array of this semiconductor.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103926629A (en) * | 2013-01-11 | 2014-07-16 | 原相科技股份有限公司 | Optical device, photosensitive element using microlens and manufacturing method thereof |
| CN111916001A (en) * | 2019-05-07 | 2020-11-10 | 欧姆龙株式会社 | Display switching device and switch |
| CN113725245A (en) * | 2021-09-06 | 2021-11-30 | 上海集成电路装备材料产业创新中心有限公司 | Pixel structure of CIS chip, micro lens array, image sensor and manufacturing method |
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2007
- 2007-06-07 CN CNA2007101082738A patent/CN101320103A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103926629A (en) * | 2013-01-11 | 2014-07-16 | 原相科技股份有限公司 | Optical device, photosensitive element using microlens and manufacturing method thereof |
| CN103926629B (en) * | 2013-01-11 | 2017-03-08 | 原相科技股份有限公司 | optical device, photosensitive element using microlens and manufacturing method thereof |
| CN111916001A (en) * | 2019-05-07 | 2020-11-10 | 欧姆龙株式会社 | Display switching device and switch |
| US11412596B2 (en) | 2019-05-07 | 2022-08-09 | Omron Corporation | Display switching device and switch |
| CN113725245A (en) * | 2021-09-06 | 2021-11-30 | 上海集成电路装备材料产业创新中心有限公司 | Pixel structure of CIS chip, micro lens array, image sensor and manufacturing method |
| CN113725245B (en) * | 2021-09-06 | 2024-03-15 | 上海集成电路装备材料产业创新中心有限公司 | Pixel structure of CIS chip, microlens array, image sensor and manufacturing method |
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