KR20000010194A - Manufacturing method of image sensor - Google Patents
Manufacturing method of image sensor Download PDFInfo
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- KR20000010194A KR20000010194A KR1019980030957A KR19980030957A KR20000010194A KR 20000010194 A KR20000010194 A KR 20000010194A KR 1019980030957 A KR1019980030957 A KR 1019980030957A KR 19980030957 A KR19980030957 A KR 19980030957A KR 20000010194 A KR20000010194 A KR 20000010194A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 5
- 239000003086 colorant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Abstract
Description
본 발명은 이미지센서(image sensor) 제조방법에 관한 것으로, 특히 평탄화된 칼라필터어레이를 형성하기 위한 이미지센서 제조방법에 관한 것이다.The present invention relates to a method of manufacturing an image sensor, and more particularly, to a method of manufacturing an image sensor for forming a flattened color filter array.
칼라필터어레이(CFA : Color Filter Array) 이미지센서는 최근에 상용화되기 시작한 반도체소자로 디지털 이미지 프로세싱 기술에 중요한 소자이다.Color Filter Array (CFA) image sensors are semiconductor devices that have recently been commercialized and are important for digital image processing technology.
도1 및 도2는 각각 종래의 CFA 이미지센서에 대한 평면도 및 단면도로서, 도1 및 도2에 도시된 바와 같이 종래의 CFA 이미지센서는 외부로부터의 빛을 받아 광전하를 생성 및 축적하는 광감지소자(12) 상부에 칼라필터가 어레이되어 있다. 칼라필터어레이는 통상 적색(Red), 녹색(Green) 및 청색(Blue)의 3가지 칼라로 이루어져 있고, 특정 파장의 빛이 투과되도록 하는 방법으로 피사체에 대한 칼라 이미지를 기록하게 된다. 칼라필터어레이는 노랑(Yellow), 자홍색 (Magenta), 청록색(Cyan)의 3가지 칼라로 이루어질 수도 있다.1 and 2 are plan and cross-sectional views of a conventional CFA image sensor, respectively. As shown in FIGS. 1 and 2, the conventional CFA image sensor receives light from the outside to generate and accumulate photocharges. The color filters are arranged on the element 12. The color filter array is generally composed of three colors of red, green, and blue, and records a color image of a subject in such a manner that light of a specific wavelength is transmitted. The color filter array may be composed of three colors: yellow, magenta, and cyan.
이러한 CFA 이미지센서는 먼저 CMOS 공정으로 반도체기판(11)에 광감지소자(12)를 형성하고, 그 밖의 다른 소자(예컨대 로직회로)를 형성한 다음, 절연층 및 금속층 등 일련의 이미지센서를 이루는 박막들(13)을 제조한 상태에서, 각각의 광감지소자 셀에 대응되는 칼라필터를 어레이하게된다.The CFA image sensor first forms a photosensitive device 12 on the semiconductor substrate 11 by a CMOS process, forms another device (for example, a logic circuit), and then forms a series of image sensors such as an insulating layer and a metal layer. In the state in which the thin films 13 are manufactured, color filters corresponding to each photosensitive device cell are arrayed.
칼라필터를 어레이하는 방법은, 통상 적색 칼라필터 물질을 먼저 코팅하고 노광 및 현상에 의해 패터닝한 후, 청색 칼라필터 물질을 코팅하고 노광 및 현상에 의해 패터닝한 다음, 녹색 칼라필터 물질을 코팅하고 노광 및 현상에 의해 패터닝하는 공정으로 이루어진다.The method of arraying color filters typically involves first coating the red color filter material and patterning by exposure and development, then coating the blue color filter material and patterning by exposure and development, then coating and exposing the green color filter material. And patterning by development.
따라서, 마지막에 형성되는 녹색 칼라필터 물질이 코팅될 때 유기계 코팅의 특징인 평탄화 특성으로 녹색 칼라필터는 다른 청색 및 적색 칼라필터에 비해 1.5배 이상으로 두꺼워지게 되고 이에 의해 도2에 도시된 바와 같이, 이후 패터닝된 녹색 칼라필터는 청색 및 적색 칼라필터에 대해 단차를 갖게 된다.Therefore, when the green color filter material formed at the end is coated, the green color filter becomes thicker by 1.5 times or more than other blue and red color filters due to the flattening characteristic of the organic coating. As shown in FIG. Then, the patterned green color filter has a step with respect to the blue and red color filters.
이에 의해 녹색광이 광감지소자로 들어가기 위해서는 녹색 칼라필터를 거쳐야 하는데, 녹색 칼라필터의 두께가 두꺼워지므로 빛 흡수로 인한 빛의 세기가 줄어들어 센서의 감도를 저하시키게 된다.As a result, the green light passes through the green color filter in order to enter the photosensitive device. Since the thickness of the green color filter becomes thick, the light intensity due to light absorption is reduced, thereby degrading the sensitivity of the sensor.
본 발명은 상기 문제점을 해결하기 위하여 안출된 것으로써, 단차 유발 없이 평탄화된 3가지 칼라필터를 어레이시키기 위한 이미지센서 제조방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, and an object thereof is to provide a method of manufacturing an image sensor for arraying three flattened color filters without causing step difference.
도1 및 도2는 각각 종래의 CFA 이미지센서에 대한 평면도 및 단면도.1 and 2 are a plan view and a cross-sectional view of a conventional CFA image sensor, respectively.
도3a 내지 도3d는 본 발명의 일실시예에 따른 이미지센서 제조방법을 나타내는 공정 단면도.3A to 3D are cross-sectional views illustrating a method of manufacturing an image sensor according to an embodiment of the present invention.
도4는 본 발명에서 O2플라즈마 식각멈춤을 설정하기 위한 제반 장치를 나타내는 개략적인 도면.Fig. 4 is a schematic diagram showing an overall apparatus for setting an O 2 plasma etch stop in the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
22 : 광감지소자 24 : 적색 칼라필터 패턴22: photosensitive device 24: red color filter pattern
25 : 녹색 칼라필터 물질막 25a : 녹색 칼라필터 패턴25 green color filter material film 25a green color filter pattern
상기 목적을 달성하기 위한 본 발명의 이미지센서 제조방법은, 소정공정이 완료된 기판 상에 적어도 한가지 색의 제1 칼라필터 패턴을 형성하는 제1단계; 상기 제1단계가 완료된 기판 전면에 제2 칼라필터 물질막을 코팅하는 제2단계; 상기 제1칼라필터 패턴의 표면이 노출되기 직전까지 상기 제2 칼라필터 물질막을 이방성 전면식각하는 제3단계; 상기 전면식각된 상기 제2 칼라필터 물질막을 선택적으로 노광 및 현상하여 패터닝하는 제4단계를 포함하여 이루어진다.The image sensor manufacturing method of the present invention for achieving the above object comprises a first step of forming a first color filter pattern of at least one color on a substrate is completed a predetermined process; A second step of coating a second color filter material film on the entire surface of the substrate on which the first step is completed; A third step of anisotropically etching the second color filter material layer until immediately before the surface of the first color filter pattern is exposed; And selectively exposing and developing the entire surface-etched second color filter material layer to pattern the second color filter material layer.
바람직하게, 상기 이방성 전면식각은 02플라즈마 식각을 사용하며, 상기 이방성 전면식각시은 식각멈춤을 위해 상기 제1 칼라필터 패턴으로부터 반사되는 반사광을 모니터링하면서 실시하하고, 반사광이 실리적으로 6% 일 때 식각을 멈춘다.Preferably, the anisotropic front etching uses 0 2 plasma etching, and the anisotropic front etching is performed while monitoring the reflected light reflected from the first color filter pattern to stop the etching, and when the reflected light is substantially 6% Stops etching
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do.
도3a 내지 도3d는 본 발명의 일실시예에 따른 이미지센서 제조방법을 나타내는 공정 단면도이다.3A to 3D are cross-sectional views illustrating a method of manufacturing an image sensor according to an exemplary embodiment of the present invention.
먼저, 도3a는 공지의 방법으로 반도체기판(21)에 예컨대 포토다이오드와 같은 광감지소자(22) 및 로직회로를 형성하고, 층간절연 및 금속배선 또는 보호막 형성 등의 일련의 제조공정을 위한 박막들(23)을 형성한 다음, 적색 칼라필터(24)와 청색 칼라필터(도면에 도시되지 않음)를 어레이한 상태에서, 녹색 칼라필터 물질막(25)이 코팅된 상태를 도시하고 있다. 칼라필터 물질은 유기계 물질이므로 유기계 코팅의 특징인 평탄화 특성으로 인해, 적색과 청색 칼라필터 사이의 녹색 칼라필터가 어레이될 부분에서 녹색 칼라필터 물질막(25)의 두께는 다른 칼라필터에 비해 1.5배 이상 커지게 된다.First, FIG. 3A shows a photosensitive device 22 such as a photodiode and a logic circuit, for example, on a semiconductor substrate 21 by a known method, and a thin film for a series of manufacturing processes such as interlayer insulation and metal wiring or protective film formation. The green color filter material film 25 is coated with the red color filter 24 and the blue color filter (not shown in the drawing) formed after the field 23 is formed. Since the color filter material is an organic material, the thickness of the green color filter material film 25 is 1.5 times higher than that of other color filters due to the planarization characteristic of the organic coating. It will grow bigger.
이어서, 도3b에 도시된 바와 같이, 녹색 칼라필터 물질막(25)의 두께를 감소시키기 위하여 02플라즈마를 이용하여 이방성 전면식각을 실시한다. 이때 이방성 식각조건은 분당 1000Å정도의 식각속도를 갖게하기 위해서 파워를 200∼300 Watt, 압력을 100∼200mTorr, 02플로우율(flow rate)을 20∼30 sccm, Ar 플로우율을 30∼90 sccm 정도의 조건으로 설정한다.Then, as shown in FIG. 3B, anisotropic front etching is performed using 0 2 plasma to reduce the thickness of the green color filter material film 25. At this time, the anisotropic etching condition is 200 ~ 300 Watt power, 100 ~ 200mTorr, 0 2 flow rate 20 ~ 30 sccm, Ar flow rate 30 ~ 90 sccm in order to have the etching speed of about 1000Å / min. Set in terms of accuracy.
한편, 이미 패터닝되어 있는 청색이나 적색 칼라필터 패턴(24)이 식각되는 것을 방지하고 녹색 칼라필터 물질막(25)의 적정한 식각 높이를 얻기 위해서는, 즉 청색 및 적색 칼라필터 패턴(24) 상에 약간의 녹색 칼라필터 물질막(25)이 남도록한 상태에서 식각을 멈추기 위해서는, 식각멈춤 조건을 설정하여야 하는바, 이를 위해 식각멈춤조건은 적색과 청색칼라필터가 식각됨에 따라 적색광과 청색광의 반사가 증가되는 것을 이용하여 적색과 청색 칼라필터에서의 반사율이 6%가 되는 시점으로 설정한다. 6%로 설정한 이유는 각 칼라물질의 투과파장에서의 굴절률이 1.7이므로 상부에 다른 물질이 없는 경우의 반사율이 6.7% 정도이기 때문이다.On the other hand, in order to prevent the blue or red color filter pattern 24 which is already patterned from being etched and to obtain an appropriate etching height of the green color filter material film 25, that is, slightly on the blue and red color filter patterns 24. In order to stop the etch while leaving the green color filter material film 25 remaining, the etch stop condition should be set. For this purpose, the etch stop condition is increased as the red and blue color filters are etched. By using this method, the reflectance at the red and blue color filters is set to 6%. The reason for setting it to 6% is that the refractive index of each color material at the transmission wavelength is 1.7, so that when there is no other material at the top, the reflectance is about 6.7%.
또한, 식각멈춤조건을 공정을 진행하면서 모니터링하기 위해서는, 도4에 도시된 바와 같이, 식각장비내에 백색광원(42)을 공정이 진행중인 기판(웨이퍼)(44)에 조사하고 적색광과 청색광을 검출할 수 있는 포토다이오드(46)를 설치하여 반사광을 측정하면 된다.In addition, in order to monitor the etch stop condition as the process proceeds, as shown in FIG. 4, the white light source 42 is irradiated to the substrate (wafer) 44 in the process and the red light and the blue light are detected. The photodiode 46 can be provided to measure the reflected light.
이어서, 도3c는 마스크를 사용한 노광 및 현상 공정으로 녹색 칼라필터 물질을 패터닝하므로써 녹색 칼라필터 패턴(25a)의 어레이를 완성한 상태이다.3C shows the completed state of the array of green color filter patterns 25a by patterning the green color filter material in an exposure and development process using a mask.
본 실시예에서는 3가지 칼라필터중 마지막에 어레이될 칼라필터 물질을 코팅한 후, O2플라즈마 식각에 의해 에치백하고, 선택적 노광 및 현상에 의해 마지막에 어레이될 칼라필터 물질을 패터닝하는 방법을 설명하고 있으나, 3가지 칼라필터중 두 번째 칼라필터를 어레이할때에도 본 발명의 기술적 사상은 적용될수 있으며, 또한 에치백시 O2플라즈마 식각이 아닌 다른 식각 처리를 적용할 수도 있으며, 칼라필터어레이는 노랑색(Yellow), 자홍색 (Magenta), 청록색(Cyan)의 3가지 칼라로 이루어질 수도 있다.In this embodiment, a method of coating the color filter material to be arrayed last among the three color filters, then etching back by O 2 plasma etching, and patterning the color filter material to be finally arrayed by selective exposure and development is described. However, the technical idea of the present invention may be applied to the second color filter array among the three color filters, and an etching process other than O 2 plasma etching may be applied to the etch back, and the color filter array may be yellow. It can also consist of three colors: Yellow, Magenta, and Cyan.
이렇듯, 본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.As such, although the technical idea of the present invention has been described in detail according to the above-described preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
본 발명은 평탄화된 칼라필터어레이를 구현하여 각 칼라필터에서의 광투과도를 증가시키므로써 이미지센서의 감도를 증가시키는 효과가 있다. 또한, 칼라필터어레이가 평탄화되어 있으므로 이후 칼라필터 상에 마이크로렌즈를 형성함에 있어 그 공정 마진을 증대시키는 효과가 있다.The present invention has the effect of increasing the sensitivity of the image sensor by implementing a flattened color filter array to increase the light transmittance in each color filter. In addition, since the color filter array is flattened, there is an effect of increasing the process margin in forming the microlens on the color filter.
Claims (5)
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| KR1019980030957A KR20000010194A (en) | 1998-07-30 | 1998-07-30 | Manufacturing method of image sensor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100649857B1 (en) * | 2000-12-11 | 2006-11-24 | 매그나칩 반도체 유한회사 | Image sensor capable of omitting planarization process befeore color filter formation process and method for fabricating the same |
| KR100658921B1 (en) * | 2000-12-26 | 2006-12-15 | 매그나칩 반도체 유한회사 | CMOS image sensor formation method capable of omitting planarization process before color filter formation process and method for fabricating the same |
| KR100691137B1 (en) * | 2005-12-26 | 2007-03-12 | 동부일렉트로닉스 주식회사 | Method of manufacturing image sensor |
| KR100720496B1 (en) * | 2005-12-29 | 2007-05-22 | 동부일렉트로닉스 주식회사 | Method for manufacturing of cmos image sensor |
| KR100880530B1 (en) * | 2002-07-15 | 2009-01-28 | 매그나칩 반도체 유한회사 | Method for forming color filter of image sensor |
-
1998
- 1998-07-30 KR KR1019980030957A patent/KR20000010194A/en not_active Application Discontinuation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100649857B1 (en) * | 2000-12-11 | 2006-11-24 | 매그나칩 반도체 유한회사 | Image sensor capable of omitting planarization process befeore color filter formation process and method for fabricating the same |
| KR100658921B1 (en) * | 2000-12-26 | 2006-12-15 | 매그나칩 반도체 유한회사 | CMOS image sensor formation method capable of omitting planarization process before color filter formation process and method for fabricating the same |
| KR100880530B1 (en) * | 2002-07-15 | 2009-01-28 | 매그나칩 반도체 유한회사 | Method for forming color filter of image sensor |
| KR100691137B1 (en) * | 2005-12-26 | 2007-03-12 | 동부일렉트로닉스 주식회사 | Method of manufacturing image sensor |
| KR100720496B1 (en) * | 2005-12-29 | 2007-05-22 | 동부일렉트로닉스 주식회사 | Method for manufacturing of cmos image sensor |
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