CN101316024A - Mode-coherent double-mode semiconductor laser structure - Google Patents
Mode-coherent double-mode semiconductor laser structure Download PDFInfo
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- CN101316024A CN101316024A CNA2007100998624A CN200710099862A CN101316024A CN 101316024 A CN101316024 A CN 101316024A CN A2007100998624 A CNA2007100998624 A CN A2007100998624A CN 200710099862 A CN200710099862 A CN 200710099862A CN 101316024 A CN101316024 A CN 101316024A
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Abstract
The invention provides a dual-mode semiconductor laser structure with mode coherence, comprising a substrate, a damping layer which is arranged on the substrate, a lower limiting layer which is arranged on the damping layer, a multi-quantum well active layer which is arranged on the lower limiting layer and is a five-section structure; two ends of the multi-quantum well active layer are zigzag shapes and the middle thereof is a plane structure; phosphor is injected into a two-section structure between the middle and the zigzag structure; the dual-mode semiconductor laser structure also comprises an upper limiting layer which is arranged on the zigzag-shaped upper surface and the middle part of the multi-quantum well active layer, a cover layer which is arranged on the upper surface of the multi-quantum well active layer and the upper limiting layer, an etching trapping layer which is arranged on the cover layer, an ohm contacting layer which is divided into five sections which are arranged on the etching trapping layer, and a metal electrode layer which is arranged on the ohm contacting layer divided into five sections.
Description
Technical field
The invention belongs to field of semiconductor photoelectron technique, is a kind of semiconductor laser structure that can produce relevant two module lasings
Background technology
Along with the multimedia development of communication in good time, the existing communication frequency band is very crowded, communication band need develop to high frequency, and wherein the 60GHz millimere-wave band is because its high loss high bandwidth is fit to the skin cellular system of wireless broadband system very much makes up, but 60GHz frequency range free development utilization still simultaneously.Yet the loss in cable of the millimeter wave of 60GHz wave band is too high, can't in cable, propagate, but very ripe optical fiber has the low-loss characteristic of high power capacity now, has proposed ROF (Radio Over Fiber) system thus, promptly millimeter wave is loaded on the light wave and transmits.Relevant bimodulus light source is the core devices in the 60GHz millimere-wave band ROF system, wherein Xiang Gan two-mode semiconductor laser integrated, compact with it, need not phase-locked loop and power output height and enjoy favor, become the focus of this area research in recent years.
Current, for the emphasis of relevant two-mode semiconductor laser research, be the phase coherence problem that solves two excitation modes.The phase noise of two excitation modes of dual-mode laser device is the principal element that causes the millimeter wave video stretching, the method that solves the bimodulus phase noise at present mainly contains two kinds, the one, add a radio frequency source and carry out active mode locking, the method of active mode locking can obtain very narrow millimeter wave live width, but the radio frequency source of 60GHz high frequency is quite expensive on the one hand, itself stablize inadequately and rise, live width is also than broad; If use the low-order harmonic locked mode on the other hand, the then required power that adds radio frequency source is very high, and mode-locking effect is good not as the first harmonic locked mode also.
The another kind of method that solves the bimodulus phase noise is a passive mode locking, also is the main flow direction of research.Typical device architecture is two sections DFB plot structures or middle structure of pressing from both sides a phase region again in this method, under two module lasing situations, utilize the light one charge carrier intermodulation of DFB active area to realize the phase coherence of two excitation modes, yet under two module lasing situations, this light one charge carrier intermodulation is very faint, thereby the mode locking poor performance, and then the phase coherence of two excitation modes is very poor.
In addition, have a kind of F-P chamber many longitudinal modes multichip semiconductor quantum-well laser now as shown in Figure 1, it utilizes a bit of as saturable absorber of Multiple Quantum Well, has realized the phase coherence of F-P chamber many longitudinal modes excitation mode well.
Therefore also utilized a bit of Multiple Quantum Well in view of the phase coherence of two excitation modes among the present invention and realized, below to the device shown in Figure 1 detailed explanation of making comparisons, so that can better understand device architecture of the present invention as saturable absorber.
The gain region at device shown in Figure 1 two ends adds the direct current forward current, and middle saturable absorption district adds the direct current reverse biased.Fig. 2 is the time domain waveform figure and the frequency domain spectrogram of this device, 40GHz wherein, 80GHz and 160GHz long 2100 μ m, 1000 μ m of corresponding respectively total chamber and 534 μ m, and the saturable absorption district is 80 μ m.The difference of electric current causes the light path at two ends, saturated absorption district unequal on the gain region of two ends, and the gain region at two ends is connected on the same electrode.
The operation principle of this device is as follows: the main excitation mode of two ends gain region is propagated in opposite directions, arrive the saturable absorption district of device middle simultaneously, here, the main excitation mode of Chuan Boing is subjected to the intensity modulated in saturable absorption district simultaneously in opposite directions, this modulating frequency is by the long decision in the total chamber of device, equals light half inverse of all used time back and forth in the chamber on the numerical value.Main excitation mode is subjected to intensity modulated just can produce side frequency on its both sides, and the difference on the frequency of side frequency and dominant frequency just equals the intensity modulated frequency, and side frequency equally also can be subjected to the intensity modulated in saturable absorption district, thereby can produce side frequency again, and side frequency produces side frequency more then ...Because this device is the F-P cavity configuration, there is not limit mould rejection, thereby the frequency that drops in its gain spectral all will obtain certain intensity shown in Fig. 2 (d), Fig. 2 (e), Fig. 2 (f), and the phase place of all these frequencies all is identical, has the good phase coherence, thereby on time domain waveform, show as high-quality pulse train shown in Fig. 2 (a), Fig. 2 (b), Fig. 2 (c), the phase coherence of these frequencies on this high-quality time domain waveform explanation frequency spectrum is very good, otherwise time domain waveform will be mixed and disorderly.
Among the present invention, passive mode locking no longer utilizes the light one charge carrier intermodulation of DFB active area, but device equally utilizes the middle a bit of Multiple Quantum Well of device as saturable absorber as shown in Figure 1, realize the phase coherence of excitation mode, but in the device of the present invention, in order to obtain two module lasings but not many module lasings, F-P chamber many longitudinal modes multichip semiconductor quantum-well laser is no longer adopted on the saturable absorber both sides, but adopt the last the first gain coupled DFB district 10 shown in Figure 3 and the last the second gain coupled DFB district 14 to obtain two excitation modes, perhaps adopt first gain coupled DFB district 24 shown in Figure 4 and second portion gain coupled DFB district 25 to obtain two excitation modes.Simultaneously, for can flexible the light path on saturable absorber both sides, device of the present invention is integrated first phase region 11 and second phase region 13 among two phase regions such as Fig. 3 and Fig. 4 in the saturable absorber both sides also.It is to utilize its high side mode suppression ratio characteristic to improve the purity of bimodulus that gain region among device Fig. 3 of the present invention, Fig. 4 adopts the reason of gain coupled DFB.Simultaneously, if in the saturable absorption district 12 of device Fig. 3 of the present invention or Fig. 4, add the interchange reverse biased, also can realize active mode locking easily.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor laser structure that produces relevant two module lasings; this structure can realize two module lasings; can under passive mode locking or active mode locking, realize the phase coherence of bimodulus; the intensity that can realize bimodulus is identical or roughly the same, can realize that the frequency difference of bimodulus is tunable.
For achieving the above object, technical solution of the present invention has provided a kind of double-mode semiconductor laser structure of mode-coherent, it is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced in the substrate;
One lower limit layer, this lower limit layer is produced on the resilient coating;
One multiple quantum well active layer, this multiple quantum well active layer is produced on the lower limit layer, and this multiple quantum well active layer is five segment structures, and two ends are zigzag, and the centre is a planar structure, injects phosphorus in the two-stage structure between centre and laciniation;
One upper limiting layer, this upper limiting layer are produced on the jagged top and mid portion on the multiple quantum well active layer;
One cap rock, this fabrication of cover coat is in multiple quantum well active layer and above the upper limiting layer;
One etching trapping layer, this etching barrier layer is produced on the cap rock;
One ohmic contact layer, this ohmic contact layer are divided into five sections and are produced on the etching barrier layer;
One metal electrode layer, this metal electrode layer are produced on the ohmic contact layer that is divided into five sections;
Wherein the top and the bottom of this ohmic contact layer of five sections are respectively: the last the first gain coupled DFB district, with the first adjacent phase region of the last the first gain coupled DFB district, the saturable absorption district adjacent with first phase region, second phase region adjacent with the saturable absorption district, the last the second gain coupled DFB district adjacent with second phase region.
Wherein this device adopts the InP based material.
The length in wherein said the last the first gain coupled DFB district accounts for 25%～40% of total device length; The length of first phase region accounts for 10%～20% of total device length; The length in saturable absorption district accounts for 2%～10% of total device length; The length of second phase region accounts for 10%～20% of total device length; The length in the last the second gain coupled DFB district accounts for 25%～40% of total device length.
The ohmic contact layer and the metal electrode layer that wherein are divided into five segment structures, the 18 μ m-20 μ m of being separated by between each section, electrode width is 2 μ m.
Wherein total device length is by bimodulus difference on the frequency decision, promptly light in device back and forth half inverse of all required times equal the bimodulus difference on the frequency.
The invention provides a kind of double-mode semiconductor laser structure of mode-coherent, it is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced in the substrate;
One lower limit layer, this lower limit layer is produced on the resilient coating;
One multiple quantum well active layer, this multiple quantum well active layer is produced on the lower limit layer, and this multiple quantum well active layer is five segment structures, injects phosphorus in the two-stage structure between centre and two ends;
One upper limiting layer, this upper limiting layer is produced on the multiple quantum well active layer;
One p type layer, this p type layer is produced on the upper limiting layer;
One 1.2Qp type layer, this 1.2Qp type layer is a laciniation, this 1.2Qp type layer is produced on the both sides above the p type layer;
One n type layer, this n type layer is produced on the increment of jagged 1.2Qp type layer;
One cap rock, this fabrication of cover coat are on p type layer and topped 1.2Qp type layer and n type layer;
One etching trapping layer, this etching barrier layer is produced on the cap rock;
One ohmic contact layer, this ohmic contact layer are divided into five sections and are produced on the etching barrier layer;
One metal electrode layer, this metal electrode layer are produced on the ohmic contact layer that is divided into five sections;
Wherein the top and the bottom of this ohmic contact layer of five sections are respectively: first gain coupled DFB district, first phase region adjacent with first gain coupled DFB district, the saturable absorption district adjacent with first phase region, second phase region adjacent with the saturable absorption district, the second portion gain coupled DFB district adjacent with second phase region.
Wherein this device adopts the InP based material.
The length in wherein said first gain coupled DFB district accounts for 25%～40% of total device length; The length of first phase region accounts for 10%～20% of total device length; The length in saturable absorption district accounts for 2～10% of total device length; The length of second phase region accounts for 10%～20% of total device length; The length in second portion gain coupled DFB district accounts for 25%～40% of total device length.
The ohmic contact layer and the metal electrode layer that wherein are divided into five segment structures, the 18 μ m-20 μ m of being separated by between each section, electrode width is 2 μ m.
Wherein total device length is by bimodulus difference on the frequency decision, promptly light in device back and forth half inverse of all required times equal the bimodulus difference on the frequency.
The adjusting flexibility height of device architecture of the present invention aspect bimodulus difference on the frequency, bimodulus intensity, mode-coherent is good, especially can obtain passive mode locking preferably.When this device is operated in the active mode locking state, from this device high tuning flexibility and integration angle, also highly significant.
Description of drawings
In order to further specify content of the present invention, below in conjunction with Figure of description the present invention is done detailed elaboration, wherein:
Fig. 1 is the device architecture schematic diagram in a saturable absorption district of multiple quantum well laser therebetween, two F-P chambeies in the prior art;
Fig. 2 is the time domain waveform figure and the frequency domain spectrogram of device shown in Figure 1;
Fig. 3 is the first embodiment of the present invention, and it is to adopt grating to carve the into relevant double-mode semiconductor laser structure schematic diagram of strong gain coupled pattern formula of active layer;
Fig. 4 is the second embodiment of the present invention, and it is the double-mode semiconductor laser structure schematic diagram that adopts the fractionated gain coupled mode mode-coherent of reverse PN junction;
Fig. 5 is the principle schematic of two excitation mode phase coherences of Fig. 3 and Fig. 4.
Embodiment
Embodiment one:
See also Fig. 3, the double-mode semiconductor laser structure of a kind of mode-coherent of the present invention, comprising:
One substrate 1, this substrate are N-InP
One resilient coating 2, this resilient coating 2 is n-InP, thickness is about 1.5 μ m, is produced in the substrate 1;
One lower limit layer 3, this lower limit layer 3 is produced on the resilient coating 2, is three layers of gradient limiting layer of 1.08Q, 1.16Q and 1.25QInGaAsP composition, and every layer thickness is about 25nm;
One multiple quantum well active layer 4, this multiple quantum well active layer 4 is produced on the lower limit layer 3, by five traps and four Multiple Quantum Well that the base is formed, wherein trap is the InGaAs compressive strain quantum well about 5nm, build and be the 1.25QInGaAsP about 22nm, this multiple quantum well active layer 4 is five segment structures, two ends are zigzag, the degree of depth of sawtooth is 4/5 of a multiple quantum well active layer 4, the centre is a planar structure, inject phosphorus in the two-stage structure between centre and zigzag, make its band gap width than more than other section blue shift 50nm;
One upper limiting layer 5, this upper limiting layer 5 are three layers of gradient limiting layer that 1.25Q, 1.16Q and 1.08QInGaAsP form, and every layer thickness is about 25nm, are produced on the jagged top and mid portion on the multiple quantum well active layer 4;
One cap rock 6, this cap rock 6 is p-InP, thickness is about 2 μ m, be produced on multiple quantum well active layer 4 and upper limiting layer 5 above;
One etching trapping layer 7, this etching barrier layer 7 is 1.1QInGaAsP, thickness is about 30nm, is produced on the cap rock 6;
One ohmic contact layer 8, this ohmic contact layer 8 is InGaAs, thickness is about 120nm, is divided into five sections and is produced on the etching barrier layer 7;
One metal electrode layer 9, this metal electrode layer 9 is Ti/Au or Ti/Pt/Au, thickness is about 300nm, is produced on the ohmic contact layer 8 that is divided into five sections;
The ohmic contact layer 8 and the metal electrode layer 9 that wherein are divided into five segment structures, the 18 μ m-20 μ m of being separated by between each section, electrode width is 2 μ m;
Wherein the top and the bottom of this ohmic contact layer of five sections 8 are respectively: the last the first gain coupled DFB district 10, first phase region 11 adjacent with the last the first gain coupled DFB district 10, the saturable absorption district 12 adjacent with first phase region 11, second phase region 13 adjacent with saturable absorption district 12, the last the second gain coupled DFB district 14 adjacent with second phase region 13.
The length in wherein said the last the first gain coupled DFB district 10 accounts for 25%～40% of total device length; The length of first phase region 11 accounts for 10%～20% of total device length; The length in saturable absorption district 12 accounts for 2%～10% of total device length; The length of second phase region 13 accounts for 10%～20% of total device length; The length in the last the second gain coupled DFB district 14 accounts for 25%～40% of total device length.
Wherein this device adopts the InP based material.
This total device length is by bimodulus difference on the frequency decision, promptly light in device back and forth half inverse of all required times equal the bimodulus difference on the frequency.
Embodiment two:
See also Fig. 4, the structure of this second embodiment is basic identical with first embodiment, and same section is no longer described.
Its difference is:
Wherein the used same parts of this embodiment is identical with embodiment one with label.Multiple quantum well active layer 4 among described second embodiment, laciniation is no longer made at the two ends of this multiple quantum well active layer 4, and changes planar structure into;
Upper limiting layer 5 among described second embodiment is produced on the plane active layer 4;
Increased p type layer 21,1.2Qp type layer 22 and n type layer 23 among described second embodiment, wherein p type layer 21 is p-InP, and thickness is about 8nm; 1.2Qp type layer 22 is 1.2QInGaAsP, thickness is about 60nm, is laciniation, is produced on the both sides above the p type layer 21; N type layer 23 is n-InP, and thickness is about 30nm, is produced on the increment of jagged 1.2Qp type layer 22;
Among described second embodiment, the device two ends are adopted and are no longer adopted grating to carve into the last the first gain coupled DFB district 10 and the last the second gain coupled DFB district 14 of active layer as embodiment one, but adopt absorption loss type first gain coupled DFB district 24 and second portion gain coupled DFB district 25 based on reverse PN junction.
Please consult Fig. 3 and Fig. 4 again, Fig. 3 and Fig. 4 are respectively the schematic diagrames of the first embodiment of the invention and second embodiment, and entire device adopts traditional multi-quantum pit structure of restriction respectively.The integral frame of device all is: 12 both sides, saturable absorption district are symmetry shape distribute successively first phase region 11, second phase region 13, the last the first gain coupled DFB district 10 or first gain coupled DFB district 24, the last the second gain coupled DFB district 14 or second portion gain coupled DFB district 25.Wherein the gain region of Fig. 3 adopts the last the first gain coupled DFB district 10 and the last the second gain coupled DFB district 14 of carving active area, the gain region of Fig. 4 adopts first gain coupled DFB district 24 and the second portion gain coupled DFB district 25 based on reverse PN junction, these two types respectively have pluses and minuses, based on low than strong gain coupled type DFB structure of the gain coupled weight of the fractionated gain coupled mode DFB structure of reverse PN junction, but its live width enhancer is low than strong gain coupled type DFB structure also, the consideration of will compromising when specifically using.First phase region 11 and second phase region 13 in the device of the present invention can make more than its wavelength blue shift 50nm with technology such as quantum well mixing, selective area growths.
Device of the present invention uses two gain coupled DFB districts, as the last the first gain coupled DFB district 10 of Fig. 3 and first gain coupled DFB district 24 and the second portion gain coupled DFB district 25 of the last the second gain coupled DFB district 14 or Fig. 4, be to obtain two module lasings rather than many module lasings for the high side mode suppression ratio characteristic of utilizing gain coupled makes device.When in two gain coupled DFB districts, when adding different electric currents in the first gain coupled DFB district 24 of the last the first gain coupled DFB district 10 of Fig. 3 and the last the second gain coupled DFB district 14 or Fig. 4 and the second portion gain coupled DFB district 25, just can obtain two excitation wavelengths, so the bimodulus frequency difference can be tuning flexibly by injection current.Obtain high difference on the frequency if desired, in the time can not satisfying by the injection current difference, can make two gain coupled DFB districts, first gain coupled DFB district 24 as the last the first gain coupled DFB district 10 of Fig. 3 and the last the second gain coupled DFB district 14 or Fig. 4 is different with the grating cycle in second portion gain coupled DFB district 25, and then make the excitation wavelength difference, finely tune the bimodulus frequency difference by injection current then, this situation utilizes the grating cycle to do coarse adjustment, injection current is finely tuned, coarse adjustment fine setting associating use can obtain very wide bimodulus difference on the frequency tuning range.
Need in the first gain coupled DFB district 24 of the last the first gain coupled DFB district 10 of two fractionated gains coupling DFB districts such as Fig. 3 and the last the second gain coupled DFB district 14 or Fig. 4 and second portion gain coupled DFB district 25, add different electric currents among the present invention, make it to swash and penetrate two different wavelength, but different injection currents makes that also the intensity of two excitation modes is inequality.For the intensity that makes two excitation modes identical or roughly the same, can allow and produce the length in the gain coupled DFB district of excitation mode by force, as the last the first gain coupled DFB district 10 of Fig. 3 or the first gain coupled DFB district 24 of Fig. 4, suitably be shorter than the gain coupled DFB district of the more weak excitation mode of generation, as the last the second gain coupled DFB district 14 of Fig. 3 or the second portion gain coupled DFB district 25 of Fig. 4.
The unequal problem of light path at 12 two ends, saturable absorption district that a variety of causes causes, can solve by first integrated in the device of the present invention phase region 11 and second phase region 13, by changing refractive index, and then change light path at first phase region 11 and second phase region, 13 injection currents.
The mode-coherent principle of device of the present invention is described below in conjunction with Fig. 5
The mode-coherent principle of device of the present invention is identical with the mode-coherent principle of device shown in Figure 1, just devices use of the present invention the high side mode suppression ratio characteristic of two gain coupled DFB unwanted side frequency is curbed, and only keep two relevant excitation modes, increase the tuning flexibility that two phase regions improve device simultaneously.
Two gain coupled DFB districts of device of the present invention, as the last the first gain coupled DFB district 10 of Fig. 3 and first gain coupled DFB district 24 and the second portion gain coupled DFB district 25 of the last the second gain coupled DFB district 14 or Fig. 4, swash and penetrate two wavelength X 1 and λ 2, shown in Fig. 5 (b), the frequency of supposing these two excitation wavelengths differs 60GHz, in saturable absorption district 12, add simultaneously suitable direct current reversed bias voltage, and the chamber of design drawing 3 or Fig. 4 device is long, make the intensity modulated frequency of the 12 pairs of excitation modes in saturable absorption district also equal 60GHz, obviously λ 1 and λ 2 will be subjected to the intensity modulated of 60GHz, the result of modulation has produced the side frequency of the 60GHz of being separated by on the both sides of λ 1 and λ 2, as Fig. 5 (a) with (c), wherein the right of λ 1 is frequently just in time overlapping with excitation mode λ 2, the left side of λ 2 is frequently just in time overlapping with excitation mode λ 1, this equates between two excitation modes and produced mutual optical injection-locked, thereby can obtain good phase coherence.Other side frequency that intensity modulated produces has then been curbed by the flash mould suppression characteristic of two gain coupled DFB at device two ends.Entire device has just obtained two module lasings of phase coherence like this.
In addition, if in saturable absorption district 12, add the interchange reversed bias voltage, then can make the sharp bimodulus implementation pattern of penetrating relevant by the active mode locking mode.
In sum, device of the present invention can acquisition model relevant two module lasings, the bimodulus difference on the frequency can be conveniently tuning, it is equal or about equally that bimodulus intensity can conveniently be transferred to.
Claims (10)
1, a kind of double-mode semiconductor laser structure of mode-coherent is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced in the substrate;
One lower limit layer, this lower limit layer is produced on the resilient coating;
One multiple quantum well active layer, this multiple quantum well active layer is produced on the lower limit layer, and this multiple quantum well active layer is five segment structures, and two ends are zigzag, and the centre is a planar structure, injects phosphorus in the two-stage structure between centre and laciniation;
One upper limiting layer, this upper limiting layer are produced on the jagged top and mid portion on the multiple quantum well active layer;
One cap rock, this fabrication of cover coat is in multiple quantum well active layer and above the upper limiting layer;
One etching trapping layer, this etching barrier layer is produced on the cap rock;
One ohmic contact layer, this ohmic contact layer are divided into five sections and are produced on the etching barrier layer;
One metal electrode layer, this metal electrode layer are produced on the ohmic contact layer that is divided into five sections;
Wherein the top and the bottom of this ohmic contact layer of five sections are respectively: the last the first gain coupled DFB district, with the first adjacent phase region of the last the first gain coupled DFB district, the saturable absorption district adjacent with first phase region, second phase region adjacent with the saturable absorption district, the last the second gain coupled DFB district adjacent with second phase region.
2, the double-mode semiconductor laser structure of mode-coherent according to claim 1 is characterized in that, wherein this device adopts the InP based material.
3, the double-mode semiconductor laser structure of mode-coherent according to claim 1 is characterized in that, the length in wherein said the last the first gain coupled DFB district accounts for 25%～40% of total device length; The length of first phase region accounts for 10%～20% of total device length; The length in saturable absorption district accounts for 2%～10% of total device length; The length of second phase region accounts for 10%～20% of total device length; The length in the last the second gain coupled DFB district accounts for 25%～40% of total device length.
4, the double-mode semiconductor laser structure of mode-coherent according to claim 1 is characterized in that, wherein is divided into the ohmic contact layer and the metal electrode layer of five segment structures, the 18 μ m-20 μ m of being separated by between each section, and electrode width is 2 μ m.
5, the double-mode semiconductor laser structure of mode-coherent according to claim 1 is characterized in that, wherein total device length is by bimodulus difference on the frequency decision, promptly light in device back and forth half inverse of all required times equal the bimodulus difference on the frequency.
6, a kind of double-mode semiconductor laser structure of mode-coherent is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced in the substrate;
One lower limit layer, this lower limit layer is produced on the resilient coating;
One multiple quantum well active layer, this multiple quantum well active layer is produced on the lower limit layer, and this multiple quantum well active layer is five segment structures, injects phosphorus in the two-stage structure between centre and two ends;
One upper limiting layer, this upper limiting layer is produced on the multiple quantum well active layer;
One p type layer, this p type layer is produced on the upper limiting layer;
One 1.2Qp type layer, this 1.2Qp type layer is a laciniation, this 1.2Qp type layer is produced on the both sides above the p type layer;
One n type layer, this n type layer is produced on the increment of jagged 1.2Qp type layer;
One cap rock, this fabrication of cover coat are on p type layer and topped 1.2Qp type layer and n type layer;
One etching trapping layer, this etching barrier layer is produced on the cap rock;
One ohmic contact layer, this ohmic contact layer are divided into five sections and are produced on the etching barrier layer;
One metal electrode layer, this metal electrode layer are produced on the ohmic contact layer that is divided into five sections;
Wherein the top and the bottom of this ohmic contact layer of five sections are respectively: first gain coupled DFB district, first phase region adjacent with first gain coupled DFB district, the saturable absorption district adjacent with first phase region, second phase region adjacent with the saturable absorption district, the second portion gain coupled DFB district adjacent with second phase region.
7, the double-mode semiconductor laser structure of mode-coherent according to claim 6 is characterized in that, wherein this device adopts the InP based material.
8, the double-mode semiconductor laser structure of mode-coherent according to claim 6 is characterized in that, the length in wherein said first gain coupled DFB district accounts for 25%～40% of total device length; The length of first phase region accounts for 10%～20% of total device length; The length in saturable absorption district accounts for 2%～10% of total device length; The length of second phase region accounts for 10%～20% of total device length; The length in second portion gain coupled DFB district accounts for 25%～40% of total device length.
9, the double-mode semiconductor laser structure of mode-coherent according to claim 6 is characterized in that, wherein is divided into the ohmic contact layer and the metal electrode layer of five segment structures, the 18 μ m-20 μ m of being separated by between each section, and electrode width is 2 μ m.
10, the double-mode semiconductor laser structure of mode-coherent according to claim 6 is characterized in that, wherein total device length is by bimodulus difference on the frequency decision, promptly light in device back and forth half inverse of all required times equal the bimodulus difference on the frequency.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742956A (en) * | 2016-04-19 | 2016-07-06 | 北京工业大学 | Mode-locked semiconductor laser with stable wavelength |
| CN108923259A (en) * | 2018-07-18 | 2018-11-30 | 中国科学院半导体研究所 | The production method of two-mode laser THz pumping source |
| CN109616870A (en) * | 2019-01-24 | 2019-04-12 | 中国科学院半导体研究所 | The mutual injection type narrow linewidth semiconductor laser of single-chip integration |
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2007
- 2007-05-31 CN CNA2007100998624A patent/CN101316024A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742956A (en) * | 2016-04-19 | 2016-07-06 | 北京工业大学 | Mode-locked semiconductor laser with stable wavelength |
| CN108923259A (en) * | 2018-07-18 | 2018-11-30 | 中国科学院半导体研究所 | The production method of two-mode laser THz pumping source |
| CN108923259B (en) * | 2018-07-18 | 2020-05-19 | 中国科学院半导体研究所 | Method for manufacturing THz pumping source of double-mode laser |
| CN109616870A (en) * | 2019-01-24 | 2019-04-12 | 中国科学院半导体研究所 | The mutual injection type narrow linewidth semiconductor laser of single-chip integration |
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