CN101311824B - Photo mask pattern correction method - Google Patents
Photo mask pattern correction method Download PDFInfo
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- CN101311824B CN101311824B CN2007101050455A CN200710105045A CN101311824B CN 101311824 B CN101311824 B CN 101311824B CN 2007101050455 A CN2007101050455 A CN 2007101050455A CN 200710105045 A CN200710105045 A CN 200710105045A CN 101311824 B CN101311824 B CN 101311824B
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Abstract
A method for correcting a light masking pattern comprises the procedures as follows: the verification of focus exposure matrix and lap piling variation is carried out for a layout area in which the contact hole or the pipe hole of a layout pattern are arranged, thus creating a prompting message; and according to the prompting message, the layout pattern of the light mask is corrected to prevent the contact hole or the pipe hole from exposure to a metal layer, a polycrystalline silicon layer or a diffusion layer.
Description
Technical field
The present invention relates to the bearing calibration of a kind of optical mask pattern (photomask pattern), relate in particular to a kind of the utilization simultaneously and focus on exposure matrix (focus-exposure matrix; FEM) revise the method for optical mask pattern with overlay variation (overlay variation).
Background technology
At integrated circuit (Integrated Circuit, IC) flourish today, element downsizing and the integrated trend that is inevitable, it also is the important topic of all circles' develop actively, and in whole semiconductor technology, photoetching can be described as one of the most very important step, so optical mask pattern shifts (transfer) accuracy to the wafer (wafer), just occupies important status.If the transfer of pattern is incorrect, then can influence critical size (Critical Dimension, tolerance CD) (tolerance), the resolution of reduction exposure on the chip.
In the correction of optical mask pattern, (optical proximitycorrection, OPC) (focus-exposure matrix FEM) carries out the correction of optical mask pattern with focusing on exposure matrix can to utilize the optical proximity correction method usually.But raising gradually along with integrated level (integration), component size is dwindled gradually, therefore in lithography step, technological process or exposure process, design transfer may produce position deviation and cause layer (layer) and overlay between the layer (layer) make a variation (overlay variation).Wherein, contact hole (contact) and pipe hole (via) position deviation that in technology (process) or exposure process, may form directly the offset between influence layer (layer) and layer (layer) and forming expose.At this moment, because the coverage rate deficiency between metal level (metal layer), diffusion layer (diffusionlayer) or the polysilicon layer (poly layer) of contact hole or pipe hole and opposite position just can cause the situation that expose in contact hole or pipe hole to take place.
Because traditional photomask bearing calibration only can cooperate the focusing exposure matrix to carry out the correction of layout patterns.Focus on the exposure matrix mainly depth of focus when the checking exposure and the influence of exposure energy, do not consider the position deviation that contact hole or pipe hole are produced in technology or when exposing the layout patterns after shifting.Therefore, traditional verification method can't accurately be verified contact hole in actual chips or the coverage rate between metal level, diffusion layer or the polysilicon layer on pipe hole and the opposite position, and the situation generation that causes contact hole or pipe hole to expose.
Summary of the invention
In view of this, one of purpose of the present invention provides a kind of bearing calibration of optical mask pattern, the overlay variation that is caused when consider focusing on exposure matrix to the influence of graph outline and technology simultaneously (offset between layer and the layer) is with the situation generation of avoiding contact hole or pipe hole to expose.
One of purpose of the present invention is that a kind of bearing calibration of optical mask pattern is being provided, and checking contact hole or pipe hole skew and the coverage rate between its respective layer are in different directions also revised layout patterns on the photomask according to this to produce an information.
One of purpose of the present invention is that a kind of bearing calibration of optical mask pattern is being provided, and considers contact hole or pipe hole issuable offset in technology, and cooperates the checking that focuses on exposure matrix, to reduce the incidence that expose in contact hole or pipe hole.
The present invention proposes a kind of bearing calibration of optical mask pattern, comprise the following steps: at first, receive a html Layout Files HTML, this html Layout Files HTML is corresponding to a layout patterns, then, to the layout areas at contact hole in the layout patterns or Guan Dong place, the checking that focuses on exposure matrix and overlay variation is to produce information (hint information), and, revise layout patterns according to cue.
In an embodiment of the present invention, the bearing calibration of above-mentioned optical mask pattern, wherein in the verification step that focuses on exposure matrix and overlay variation, also comprise metal level, diffusion layer and polysilicon layer to corresponding to this layout areas in the layout patterns, the checking that focuses on exposure matrix and overlay variation is to produce information.
In an embodiment of the present invention, the bearing calibration of above-mentioned optical mask pattern, wherein the checking of overlay variation comprises according to process conditions, set the contact hole of layout patterns or displacement, the moving direction in pipe hole, metal level, diffusion layer or the polysilicon layer of checking opposite position is to the coating ratio in contact hole in this layout patterns or pipe hole.
In an embodiment of the present invention, the bearing calibration of above-mentioned optical mask pattern, wherein the checking of overlay variation also comprises the moving direction with a plurality of angles, and metal level, diffusion layer or the polysilicon layer of checking opposite position is to the coating ratio in contact hole in the layout patterns or pipe hole.For example with contact hole or the pipe hole four diagonal angles, as the moving direction that may be offset.
In an embodiment of the present invention, the bearing calibration of above-mentioned optical mask pattern, wherein information is included on the different moving directions, and the coating ratio between metal level, diffusion layer or the polysilicon layer of the contact hole in the layout patterns or pipe hole and opposite position and is revised suggestion.
The present invention proposes a kind of bearing calibration of optical mask pattern in addition, comprise the following steps: at first, receive a html Layout Files HTML, html Layout Files HTML is corresponding to a layout patterns, verify that then coating ratio between metal level, diffusion layer or the polysilicon layer of contact hole in the layout patterns or pipe hole and opposite position is to produce an information, and, revise layout patterns according to information.
From another perspective, the present invention proposes a kind of bearing calibration of optical mask pattern, comprises the following steps: at first, receives a html Layout Files HTML, and html Layout Files HTML is corresponding to a layout patterns; Then, check whether comprise a layout areas in the layout patterns with contact hole or pipe hole; If layout patterns comprises layout areas, then above-mentioned layout areas is carried out one and focus on the checking that exposure matrix and an overlay make a variation and cooperate the above-mentioned layout patterns of an optical proximity correction method correction; Then, according to lithography rules correction layout patterns; According to focus-exposure model correction layout patterns; Then, the coating ratio between the contact hole in the checking layout areas or metal level, diffusion layer or the polysilicon layer of pipe hole and opposite position is to produce an information; And, revise layout patterns according to information.
The present invention is because of consider focusing on exposure matrix simultaneously to issuable offset in the influence of the graph outline in the layout patterns and actual process and the exposure, therefore can reduce the overlay variation between layer and the layer, avoid the situation that expose in contact hole or pipe hole to take place.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the bearing calibration process flow diagram of optical mask pattern according to an embodiment of the invention;
Fig. 2 is the bearing calibration of optical mask pattern according to another embodiment of the present invention;
Fig. 3 is the correcting process figure of optical mask pattern according to another embodiment of the present invention;
Fig. 4 is for only utilizing the revised layout patterns of optical proximity correction method according to an embodiment of the invention;
Fig. 5 focuses on the revised layout patterns of exposure matrix for cooperating according to an embodiment of the invention;
Fig. 6 A is the synoptic diagram of simulation contact hole 432,442 to the upper left side skew;
Fig. 6 B is the synoptic diagram of simulation contact hole 432,442 to the upper right side skew;
Fig. 6 C is the synoptic diagram of simulation contact hole 432,442 below skew left;
Fig. 6 D is the synoptic diagram of simulation contact hole 432,442 to the lower right skew.
The main element symbol description
S110～S130, S210～S230, S310～S370: step
412～442: contact hole
410～440: metal level
Embodiment
Because photoetching, exposure and technological process all may cause the element on the chip to be offset or to cause the overlay between layer and the layer to make a variation, therefore the present invention is at the timing of photomask pattern, consider optical proximity correction, focusing exposure matrix and overlay variation influence simultaneously to layout patterns, the variation that promptly may cause at photoetching, exposure and technological process before the making of photomask pattern is done suitable correction to the layout patterns on the photomask, effectively increases the yield of chip.
Next, further the mode with process flow diagram illustrates embodiments of the present invention, and Fig. 1 is the bearing calibration process flow diagram of optical mask pattern according to an embodiment of the invention.At first, step S110 receives a html Layout Files HTML, and this html Layout Files HTML carries out initialized action to this html Layout Files HTML then corresponding to a layout patterns, for example computing of the conversion of File Format or Boolean function etc. is converted to html Layout Files HTML the File Format that is applicable to optical proximity correction.Then, step S120 is at the layout areas of contact hole in the layout patterns or Guan Dong position, and the checking that focuses on exposure matrix and overlay variation is to produce an information.
Wherein, focus on the influence, the particularly influence on the profile of layout patterns that exposure matrix mainly is the depth of focus and exposure energy when the checking exposure layout patterns after to transfer.Because the imperfection of exposure can make the profile of layout patterns produce the variation of certain amplitude.And the overlay variation mainly is to consider whether the relative position between layer and the layer produces variation or asymmetric, for example relative position between contact hole and the metal level.Because in carrying out figure transfer or technological process, different photo mask layer are to transfer layout patterns in different time and process, therefore, the relative position between layer and the layer may produce skew.Add now component size and dwindle, as long as just have slightly offset may influence coverage rate between contact hole or pipe hole and corresponding layer (as metal level or the diffusion layer).For example contact hole or pipe hole should be positioned among the layout areas of metal level fully, if the position in contact hole or pipe hole produces skew, then may exceed the layout areas of metal level and produce the situation that exposes.
In conventional art,, do not consider the position deviation that contact hole or pipe hole are produced when technology or exposure at focusing on the optical proximity correction that exposure matrix is done.Step S120 in the present embodiment then does dual affirmation to verify whether coverage rate and relative position between metal level, diffusion layer or the polysilicon layer on contact hole or pipe hole and the relative position meet design at focusing on exposure matrix and overlay variation.In the present embodiment, the checking of overlay variation is mainly according to process conditions, set the contact hole of layout patterns or displacement, the moving direction in pipe hole, metal level, diffusion layer or the polysilicon layer of checking opposite position be the coating ratio under different offset conditions to contact hole or pipe hole.
Then comprising a plurality of angles aspect the checking of moving direction, for example contact hole or pipe four of the hole are to the angular direction, and then according to different technology conditions, simulation is at the offset and the offset distance of different directions.Then, cooperate to focus on the influence of exposure matrix to the layout patterns profile again, whether metal level, diffusion layer or the polysilicon layer of verifying opposite position reaches standard to the coating ratio in contact hole or pipe hole, for example covers fully.Then, step S120 exports an information according to the checking result.Information is included under all offset conditions, coating ratio between metal level, diffusion layer or the polysilicon layer of the contact hole of layout patterns or pipe hole and opposite position and correction suggestion.Step S130 revises layout patterns then according to information.As for the condition of revising, then can set a preset value, if coating ratio less than this preset value, then needs further to revise relevant layout patterns by the user.In another embodiment of the present invention, the present invention can utilize the contact hole in step S120 and the step S130 repeated authentication layout patterns or manage the coverage rate and the offset in hole, till meeting design requirement.
Next, Fig. 2 is the bearing calibration of optical mask pattern according to another embodiment of the present invention, is mainly used on the correction flow process of overlay variation.At first, in step S210, receive a html Layout Files HTML, this html Layout Files HTML is corresponding to a layout patterns.Then, step S220 is according to different process conditions, set contact hole or the displacement in pipe hole and the simulated conditions of moving direction, coating ratio with between metal level, diffusion layer or the polysilicon layer of the contact hole in the checking layout patterns or pipe hole and opposite position produces an information then according to this.Step S230 revises layout patterns then according to received information.
Above-mentioned steps S220 can set the moving direction of a plurality of angles, for example contact hole or the pipe hole four diagonal angles, metal level, diffusion layer or the polysilicon layer of verifying opposite position then one by one are to the contact hole of layout patterns or the coating ratio in pipe hole, find out and wherein may produce a maximum error angle that exposes, so that information to be provided.
In another embodiment of the present invention, Fig. 1,2 operation steps can cooperate the optical proximity effect revised law to carry out layout, for example simultaneously layout patterns is carried out the optical proximity effect correction in step S120, the effect of so not only possessing former optical proximity effect revised law more can increase the accuracy of photomask correction.
Fig. 3 is the correcting process figure of optical mask pattern according to another embodiment of the present invention.Step S310 receives a html Layout Files HTML, and this html Layout Files HTML is corresponding to layout patterns.Then, step S320 checks whether comprise the layout areas with contact hole or pipe hole in this layout patterns; If not, then enter step S325, utilize optical proximity correction method correction layout patterns; If, then enter step S330, the layout areas with contact hole or pipe hole is focused on the checking that exposure matrix and overlay make a variation and cooperates optical proximity correction method correction layout patterns.
Then, step S340 carries out the layout affirmation of layout patterns and revises layout patterns according to lithography rules (lithography rule).Step S350 then revises layout patterns according to focus-exposure model (focus exposuremodeling), to reach best lithographic results.Then, the coating ratio between the contact hole in the step S360 checking layout areas or metal level, diffusion layer or the polysilicon layer of pipe hole and opposite position is to produce an information.Comprise the coverage rate checking and correction suggestion of different directions in the information.Step S370 revises layout patterns then according to information.At last, step S380 produces the layout patterns on the photomask according to revised result.
Next, further to illustrate the analog result of utilizing the resulting layout patterns of different verification methods.Fig. 4 is for only utilizing the revised layout patterns of optical proximity correction method (optical proximity correction).Contact hole 412,414,422,432,442 should be positioned among the layout areas of metal level 410,420,430,440 fully, but contact hole 412,414 situation about having exposed wherein, just metal level 410 can't cover the layout areas of contact hole 412,414 fully.And focus on the revised layout patterns of exposure matrix for cooperating shown in Fig. 5.Because the depth of focus, exposure energy and focusing center during exposure can influence actual layout patterns, therefore in Fig. 5, the profile variation amplitude of metal level 410,420,430,440 can strengthen.As shown in Figure 5, wherein the contact hole 422 in the metal level 420 just is verified out and may have produced situation about exposing.But the layout areas at contact hole 432,442 places is verified out situation about exposing is not arranged.
Next, if the offset again when considering technology, shown in Fig. 6 A～6D, Fig. 6 A～6D is for considering the layout patterns after the overlay variation.In the present embodiment, set four moving directions that may be offset (four diagonal angles of contact hole), layout areas with contact hole 432,442 and metal level 430,440 places is an example then, and the verification method of overlay variation between contact hole 432,442 and the metal level 430,440 is described.Fig. 6 A is the synoptic diagram of simulation contact hole 432,442 to the upper left side skew; Fig. 6 B is the synoptic diagram of simulation contact hole 432,442 to the upper right side skew; Fig. 6 C is the synoptic diagram of simulation contact hole 432,442 below skew left; Fig. 6 D is the synoptic diagram of simulation contact hole 432,442 to the lower right skew.Wherein, as shown in Figure 6A, the upper left corner of contact hole 432,442 all is verified out and may produces situation about exposing.Therefore, during layout patterns correction on carrying out photomask, can be again carry out other and revise, take place with the situation of avoiding contact hole to expose at the placement position of contact hole 432,442.To the influence of the layout patterns after shifting, can revise the layout patterns (optical mask pattern) on the photomask if consider optical proximity correction, focusing exposure matrix and overlay variation simultaneously more accurately, avoid exposing of contact hole or pipe hole.
By Fig. 4～6D as can be known, at the timing that carries out optical mask pattern (layout patterns on the photomask), the possible offset that causes in the time of can be at technology, do further checking, so just, can revise its layout patterns in advance, the situation of avoiding exposing takes place, particularly contact hole or pipe hole.In addition, the present invention also is not limited to contact hole and the checking of managing the hole, the also checking that makes a variation applicable to the overlay between different layers and the layer, and the direction of its offset also is not limited to four to the angular direction, can the simultaneous verification level or the offset of direction such as vertical, have in the present technique field and to know the knowledgeable usually, should know its embodiment easily by inference, do not add tired stating at this.
Comprehensively above-mentioned, the present invention considers optical proximity correction simultaneously, focuses on exposure matrix and overlay that technology causes variation, therefore can verify contact hole or the pipe hole that may expose more accurately, and then revise its layout patterns, improves the chip yield.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (17)
1. the bearing calibration of an optical mask pattern comprises the following steps:
Receive html Layout Files HTML, this html Layout Files HTML is corresponding to layout patterns;
Layout areas to contact hole in this layout patterns or Guan Dong place, the checking that focuses on exposure matrix and overlay variation is to produce information, the checking of wherein said overlay variation is according to process conditions, set the contact hole of this layout patterns or displacement, the moving direction in pipe hole, metal level, diffusion layer or the polysilicon layer of checking opposite position is to the coating ratio in contact hole in this layout patterns or pipe hole; And
According to this information, revise this layout patterns.
2. the bearing calibration of optical mask pattern as claimed in claim 1, wherein in the verification step that carries out this focusing exposure matrix and this overlay variation, comprise also that to corresponding to metal level, diffusion layer and the polysilicon layer of this layout areas in this layout patterns the checking of carrying out this focusing exposure matrix and this overlay variation is to produce this information.
3. the bearing calibration of optical mask pattern as claimed in claim 1 wherein in the verification step that carries out this focusing exposure matrix and this overlay variation, also comprises cooperating this layout patterns of optical proximity correction method correction.
4. the bearing calibration of optical mask pattern as claimed in claim 1, wherein in the verification step that carries out this focusing exposure matrix and this overlay variation, also comprise and check whether this layout patterns comprises contact hole or pipe hole, if this layout patterns does not comprise contact hole or pipe hole, then according to this layout patterns of optical proximity correction method correction.
5. the bearing calibration of optical mask pattern as claimed in claim 1, wherein the checking of this focusing exposure matrix comprises the influence to this layout patterns of the depth of focus and exposure energy.
6. the bearing calibration of optical mask pattern as claimed in claim 1, wherein the checking of this overlay variation is according to process conditions, set the contact hole of this layout patterns or displacement, the moving direction in pipe hole, metal level, diffusion layer or the polysilicon layer of checking opposite position is to the coating ratio in contact hole in this layout patterns or pipe hole.
7. the bearing calibration of optical mask pattern as claimed in claim 6, wherein the checking of this overlay variation also comprises the moving direction with a plurality of angles, and metal level, diffusion layer or the polysilicon layer of checking opposite position is to the contact hole of this layout patterns or the coating ratio in pipe hole.
8. the bearing calibration of optical mask pattern as claimed in claim 7, wherein those angles comprise that four diagonal angles in the contact hole of this layout patterns or pipe hole are with checking maximum error angle.
9. the bearing calibration of optical mask pattern as claimed in claim 1, wherein this information comprises the coating ratio between metal level, diffusion layer or the polysilicon layer of contact hole in this layout patterns or pipe hole and opposite position and revises and advise.
10. the bearing calibration of optical mask pattern as claimed in claim 1 wherein also comprises the following steps:
According to lithography rules to revise this layout patterns.
11. the bearing calibration of optical mask pattern as claimed in claim 1 wherein also comprises the following steps:
According to focus-exposure model to revise this layout patterns.
12. the bearing calibration of an optical mask pattern comprises the following steps:
Receive html Layout Files HTML, this html Layout Files HTML is corresponding to layout patterns;
According to process conditions, set the contact hole of this layout patterns or displacement, the moving direction in pipe hole, verify that coating ratio between metal level, diffusion layer or the polysilicon layer of contact hole in this layout patterns or pipe hole and opposite position is with the generation information; And
According to this information, revise this layout patterns.
13. the bearing calibration of optical mask pattern as claimed in claim 12, wherein in the step of checking, more according to process conditions, set the contact hole of this layout patterns or displacement, the moving direction in pipe hole, metal level, diffusion layer or the polysilicon layer of checking opposite position is to the contact hole of this layout patterns or the coating ratio in pipe hole.
14. the bearing calibration of optical mask pattern as claimed in claim 13, wherein in the step of checking, more with the moving direction of a plurality of angles, metal level, diffusion layer or the polysilicon layer of checking opposite position is to the contact hole of this layout patterns or the coating ratio in pipe hole.
15. the bearing calibration of optical mask pattern as claimed in claim 14, wherein those angles comprise the contact hole of this layout patterns or four diagonal angles in pipe hole.
16. the bearing calibration of an optical mask pattern comprises the following steps:
Receive html Layout Files HTML, this html Layout Files HTML is corresponding to layout patterns;
Check and whether comprise layout areas in this layout patterns with contact hole or pipe hole;
If this layout patterns comprises this layout areas, then this layout areas is focused on the checking of exposure matrix and overlay variation and cooperates this layout patterns of optical proximity correction method correction, the checking of wherein said overlay variation is according to process conditions, set the contact hole of this layout patterns or displacement, the moving direction in pipe hole, metal level, diffusion layer or the polysilicon layer of checking opposite position is to the coating ratio in contact hole in this layout patterns or pipe hole;
According to this layout patterns of lithography rules correction;
According to this layout patterns of focus-exposure model correction;
Verify the coating ratio between metal level, diffusion layer or the polysilicon layer of contact hole in this layout areas or pipe hole and opposite position, with the generation information; And
According to this information, revise this layout patterns.
17. the bearing calibration of optical mask pattern as claimed in claim 16 wherein also comprises the following steps:
If this layout patterns does not comprise contact hole or pipe hole, then according to this layout patterns of optical proximity correction method correction.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101050455A CN101311824B (en) | 2007-05-22 | 2007-05-22 | Photo mask pattern correction method |
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| CN2007101050455A CN101311824B (en) | 2007-05-22 | 2007-05-22 | Photo mask pattern correction method |
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| CN101311824A CN101311824A (en) | 2008-11-26 |
| CN101311824B true CN101311824B (en) | 2010-08-25 |
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| CN2007101050455A Active CN101311824B (en) | 2007-05-22 | 2007-05-22 | Photo mask pattern correction method |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104749873B (en) * | 2013-12-31 | 2019-09-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method for more patterning processes |
| CN106226926B (en) * | 2016-08-08 | 2019-08-23 | 深圳市科利德光电材料股份有限公司 | A kind of liquid crystal display and improve the method that nurse draws phenomenon |
| CN109494185B (en) * | 2018-10-31 | 2021-12-07 | 上海华力微电子有限公司 | Optical proximity correction method for optimizing connection performance of through hole layer |
| CN111766761A (en) * | 2020-07-20 | 2020-10-13 | 长江存储科技有限责任公司 | Photomask manufacturing method |
| CN114185248A (en) * | 2020-09-14 | 2022-03-15 | 刘大有 | Wafer offset correction method for maskless exposure machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6265121B1 (en) * | 1999-04-23 | 2001-07-24 | United Microelectronics Corp. | Method of optical proximity correction |
| CN1450407A (en) * | 2002-04-09 | 2003-10-22 | 联华电子股份有限公司 | Method for correcting mask distribution pattern |
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2007
- 2007-05-22 CN CN2007101050455A patent/CN101311824B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6265121B1 (en) * | 1999-04-23 | 2001-07-24 | United Microelectronics Corp. | Method of optical proximity correction |
| CN1450407A (en) * | 2002-04-09 | 2003-10-22 | 联华电子股份有限公司 | Method for correcting mask distribution pattern |
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