CN101311347B - Silicon with three-dimensional depression structure and method for preparing same - Google Patents
Silicon with three-dimensional depression structure and method for preparing same Download PDFInfo
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- CN101311347B CN101311347B CN2008101011879A CN200810101187A CN101311347B CN 101311347 B CN101311347 B CN 101311347B CN 2008101011879 A CN2008101011879 A CN 2008101011879A CN 200810101187 A CN200810101187 A CN 200810101187A CN 101311347 B CN101311347 B CN 101311347B
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Abstract
The invention discloses silicon with a three-dimensional sunken structure and a preparing method thereof, which belongs to the field of semiconductor material and preparation thereof. The three-dimensional sunken structure of the silicon with the three-dimensional sunken structure of the invention is in the shape of a right prism, wherein, the undersurface is a polygon which sequentially consists of side A1, A2, B1, B2, C1 and C2, wherein, side A1 is parallel to A2; side B1 is parallel to B2; side C1 is parallel to C2; triangles formed by three intersections obtained by intersecting of two of straight lines where A1, B1 and C1 or A2, B2 and C2 lie are regular triangles. The invention also provides a method for preparing the silicon with the three-dimensional sunken structure by a vapor deposition method, wherein, the method is that the silicon with a three-dimension solid structure grows by the eutectic melting of the sediment of zinc and silicon on the surface of silicon. Compared with the prior art, the invention has the advantages that raw material needed in the preparation is very cheap; the preparing procedures are simple and easy to be repeated; the preparation parameter is easy to control; the crystallization of a generated product is good; a regular three-dimensional solid structure is provided.
Description
Technical field
The present invention relates to a kind of silicon and preparation method thereof, belong to semiconductor material and preparation field thereof with three-dimensional depression structure.
Background technology
The novel character that has the nano material of special construction and show has become the focus of people's research.A lot of physical phenomenons of these materials are foretold and are confirmed.And also be the nearest focus of research in silicon face growing three-dimensional three-dimensional arrangement.This three-dimensional structure that obtains by self-assembled growth has important application prospects in fields such as photoelectric devices.
Silicon is one of of paramount importance material in the semiconductor technology, and growing nano or micrometer structure have great importance on silicon.The 3-D solid structure that the present invention relates to has the right prism profile, can be used as the container or the template of other nano material of diauxic growth (as zinc oxide etc.).In addition, said structure also can be applied at MEMS.Three-dimensional hollow structures such as right prism that can grown silicon on the basis of the three-dimensional depression structure of silicon are studied the self-assembly characteristic that this structure can disclose silicon.
At present, the preparation method of roof structure of this silicon yet there are no report.Similarly, preparation " well " structure generally adopts electron beam exposure (Electron-Beam Lithography) method [L.Vescan on silicon base, et al.Self-assemblingof Ge on finite Si.001.areas comparable with the island size.Applied Physics Letters 82,3517 (2003)] and KOH corrosion [Shyh-Shin Ferng, et al.Growth behaviour of Ge nano-islands on thenanosized Si (111) facets bordering on two (100) planes.Nanotechnology 17,5207 (2006)] etc. method.
Summary of the invention
The object of the present invention is to provide a kind of silicon and preparation method thereof with three-dimensional depression structure.
Above-mentioned three-dimensional depression structure with silicon of three-dimensional depression structure is a vertical prismatic shape, and its bottom surface is a Polygons, comprises limit A1 successively, A2, and B1, B2, C1, C2, wherein A1 is parallel to B2, and B1 is parallel to C2, and C1 is parallel to A2; And A1＞0, B1＞0, C1＞0, A2 〉=0, B2 〉=0, C2 〉=0; The trilateral that A1, B1, the straight line at C1 place intersect three intersection points formation that obtain in twos is an equilateral triangle, as shown in Figure 1.
The bottom surface of this sunk structure is that opposite side is parallel in twos, and interior angle is 120 ° a hexagon.Especially, work as A2, B2, when having one to be zero among the C2, this bottom surface is a pentagon, this three-dimensional depression structure is a pentagonal prism shape; Work as A2, B2, when having two to be zero among the C2, this bottom surface is an isosceles trapezoid, this three-dimensional depression structure is a four prism type; Work as A2, when B2, C2 were zero, this bottom surface was an equilateral triangle, and this three-dimensional depression structure is regular triangular prism shaped.
According to obtaining scanning electron microscope (SEM) picture, the length of above-mentioned each prismatic bottom surface is all between 1 micron to 50 microns; The height of whole prismatic profile is between 1 micron to 5 microns.
The present invention prepares above-mentioned silicon with three-dimensional depression structure by CVD (Chemical Vapor Deposition) method.Entire reaction is carried out in vacuum chamber, uses rare gas element to be shielding gas.This method is not used catalyzer, and a kind of preparation method with silicon of three-dimensional depression structure is provided.
The method itself that the present invention obtains the three-dimensional depression structure of silicon has simply, and is easy to the characteristics that repeat to realize.This method comprises following step:
(1) silicon chip and the metal zinc with the surfacing cleaning places heatable reaction chamber respectively; Wherein (111) of silicon chip face up, as the above-mentioned substrate with silicon of three-dimensional depression structure of growth; Preferably, before silicon chip is put into reaction chamber, use the skin daraf(reciprocal of farad) that silicon chip is carried out clean,, reaction can more successfully be carried out so that its surface is free from foreign meter.Metal zinc can be placed the central position of reaction chamber; But silicon chip is the centering position then, perhaps near the central position or place tuyere position under the reaction chamber.Here uptake refers to the end that shielding gas enters, and the air port refers to an end of bleeding and exporting down.The consumption of required metal zinc is as the criterion to satisfy two conditions: will guarantee have abundant zinc powder to be evaporated in the chamber on the one hand in temperature-rise period, form zinc fume and contact with silicon face; On the other hand, when heating up end, zinc powder should be evaporated fully, otherwise can form the nanostructure of zinc oxide, interference experiment at silicon chip.
(2) feed shielding gas, remove the air in the reaction chamber, and chamber inner pressure is remained on by force between 0.3 to 0.5MPa; Wherein, described shielding gas is preferably rare gas element, and in actual applications, because cost, commonly used is argon gas.Flow is preferably 30-60sccm.
(3) heating makes the interior temperature of chamber reach 600-1200 ℃, and temperature-rise period continues 60-100 minute, and keeps 20-30 minute under top temperature.
(4) temperature in the chamber is reduced to room temperature naturally.Take out sample, on silicon base, obtain having the silicon of three-dimensional depression structure.
What deserves to be explained is, in above-mentioned steps (3) and (4), all keep feeding shielding gas.
Can find that by the product that obtains being carried out the EDXS analysis major ingredient that the present invention has the silicon of three-dimensional depression structure is a silicon, contains a spot of zinc simultaneously.
Compare with prior art, advantage of the present invention is: the preparation desired raw material is dirt cheap; Preparation process is simple; Preparation parameter is controlled easily; The product pattern that generates is smooth, the well-crystallized, and have the 3-D solid structure of the silicon of rule.
Description of drawings
Fig. 1. the present invention has the bottom surface geometrical shape figure of three-dimensional depression structure of the silicon of three-dimensional depression structure;
Fig. 2. the present invention has the vertical view one of the silicon of three-dimensional depression structure;
Fig. 3. the present invention has the vertical view two of the silicon of three-dimensional depression structure;
Fig. 4. the present invention has the vertical view three of the silicon of three-dimensional depression structure;
Embodiment
In conjunction with the accompanying drawings the present invention is described in further detail below by embodiment.
Embodiment one
In the present embodiment, the reaction raw materials of employing is the silicon chip (111 face) of 10mm * 10mm, the chemical pure metal zinc.
At first use the skin daraf(reciprocal of farad) that silicon chip is cleaned, remove the zone of oxidation on surface and the magazine of surface adsorption.The silicon chip size generally is cut into 10mm * 10mm.
The 0.8-1g zinc powder is placed in the middle of the quartz boat, be positioned over the center of tubular type heating furnace.In addition, the quartz boat that the heads silicon chip of 3-4 sheet is housed is positioned over apart from the following air port at 10cm place, tubular type heating furnace center.
Sample is packed into after the tubular type heating furnace sealing fully, opens mechanical pump and bleeds, and makes intraductal pressure less than 0.1MPa.Then feeding argon gas reaches about 0.4MPa the interior pressure of stove.And remain on this pressure.In this process, mechanical pump is worked always, reaches running balance.
Set 80 fens clock times and make chamber be warming up to 1100 ℃ of top temperatures, and kept 25 minutes in this temperature from room temperature.In the whole experiment, argon gas feeds as shielding gas always, and flow is 40sccm; In this process, change as pressure in the stove, adjust rate of air sucked in required and make it to keep original set(ting)value.
After about four or five hours, temperature is reduced to room temperature in the stove, opens vacuum chamber and takes out sample.
In the present embodiment, from the scanning electronic microscope general image of the resulting silicon chip of quartz boat such as accompanying drawing 2,3 and 4 shown in.
Embodiment two
In the present embodiment, top temperature is made as more than 1300 ℃, and other condition is with embodiment one, and the three-dimensional depression structure that obtains on silicon chip is also imperfect.
Embodiment three
In the present embodiment, do not cover on silicon chip or thermal evaporation deposition zinc powder, other condition only heats silicon chip with embodiment one, finally can not obtain the three-dimensional structure of any silicon.
From above three embodiment as can be seen, as long as have metal zinc and silicon chip under suitable temperature, to react, will obtain having the silicon of three-dimensional depression structure.Other parameter also can influence the growth of the 3-D solid structure of silicon as top temperature, pressure and soaking time.Wherein, the size that those skilled in the art will appreciate that zinc powder usage quantity and silicon chip is to decide according to heating installation, does not exceed to scope with the embodiment of the invention.
More than by embodiment the present invention is described in detail, the technology of this area is to be understood that with personnel, in the scope that does not exceed spirit of the present invention and essence, the present invention is made certain modification and distortion, such as replacing the disclosed method of content embodiment of the present invention that silicon chip is carried out clean with additive method, or use and the kin metal of zinc, perhaps the heating installation with other vacuum-pumpings replaces the disclosed tubular type heating furnace of the present invention, still can realize purpose of the present invention.In addition, set different temperature and times, different parameters such as pressure still might be realized result of the present invention.
Claims (8)
1. the silicon with three-dimensional depression structure is characterized in that, described three-dimensional depression structure is a vertical prismatic shape, and its bottom surface is a Polygons, comprises limit A1 successively, A2, and B1, B2, C1, C2, wherein A1 is parallel to B2, and B1 is parallel to C2, and C1 is parallel to A2; And A1＞0, B1＞0, C1＞0, A2 〉=0, B2 〉=0, C2 〉=0; The trilateral that A1, B1, the straight line at C1 place intersect three intersection points formation that obtain in twos is an equilateral triangle;
Described A1, A2, B1, B2, C1, the base length of side non-vanishing among the C2 is between 1 micron to 50 microns;
The height of described three-dimensional depression structure is between 1 micron to 5 microns.
2. the silicon with three-dimensional depression structure as claimed in claim 1 is characterized in that A2, B2, among the C2 only one be zero.
3. the silicon with three-dimensional depression structure as claimed in claim 1 is characterized in that A2, and B2 has two to be zero among the C2.
4. the silicon with three-dimensional depression structure as claimed in claim 1 is characterized in that A2, and B2, C2 are zero.
5. preparation method with silicon of three-dimensional depression structure, its step comprises:
(1) silicon chip and the zinc powder with the surfacing cleaning places heatable reaction chamber respectively, and (111) face of silicon chip is as reaction interface;
(2) feed shielding gas, remove the air in the reaction chamber, and make that pressure remains between 0.3 to 0.5MPa in the chamber, described shielding gas is a rare gas element;
(3) heating makes the reaction chamber room temp reach 600-1200 ℃, and temperature-rise period continues 60-100 minute, and keeps 20-30 minute under top temperature;
(4) temperature in the chamber is reduced to room temperature naturally, obtain having the silicon of three-dimensional depression structure.
6. method as claimed in claim 5 is characterized in that, the described zinc powder of step (1) places the central position in the reaction chamber, and silicon chip can place the central position of reaction chamber and be positioned under the zinc powder, also can place down the air port.
7. method as claimed in claim 5 is characterized in that, the quality of the described zinc powder of step (1) satisfies following condition: guaranteeing in temperature-rise period has abundant zinc powder to be evaporated in the reaction chamber, makes the zinc fume that forms contact with silicon face; When heating up end, zinc powder is evaporated fully simultaneously.
8. method as claimed in claim 5 is characterized in that, the described reaction chamber of step (1) is the tubular type heating furnace, and perhaps other can provide the heatable equipment of vacuum chamber.
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| CN2008101011879A CN101311347B (en) | 2008-02-29 | 2008-02-29 | Silicon with three-dimensional depression structure and method for preparing same |
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| CN101311347B true CN101311347B (en) | 2010-06-16 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5719741A (en) * | 1994-10-07 | 1998-02-17 | Oji Paper Co., Ltd. | Zinc-deposited base material for metallized capacitors and method of manufacture thereof |
| CN1396300A (en) * | 2002-07-17 | 2003-02-12 | 清华大学 | Process for preparing large-area zinc oxide film with nano lines by physical gas-phase deposition |
| CN1789139A (en) * | 2005-12-29 | 2006-06-21 | 大连理工大学 | Method for directional growth of zinc oxide nano-belt |
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- 2008-02-29 CN CN2008101011879A patent/CN101311347B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5719741A (en) * | 1994-10-07 | 1998-02-17 | Oji Paper Co., Ltd. | Zinc-deposited base material for metallized capacitors and method of manufacture thereof |
| CN1396300A (en) * | 2002-07-17 | 2003-02-12 | 清华大学 | Process for preparing large-area zinc oxide film with nano lines by physical gas-phase deposition |
| CN1789139A (en) * | 2005-12-29 | 2006-06-21 | 大连理工大学 | Method for directional growth of zinc oxide nano-belt |
Non-Patent Citations (2)
| Title |
|---|
| L Vescan等.Self-assembling of Ge on finite Si 001 areas comparable withthe island size.Applied Physics Letters82.2003,823517. * |
| Shyh-shin Ferng等.Growth behaviour of Ge nano-islands on the nanosized Si(111) facets bordering on two (100) planes.Nanotechnology17.2006,175207. * |
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