CN101303506B - Light differentiator based on silicon based ring-shaped resonant cavity - Google Patents
Light differentiator based on silicon based ring-shaped resonant cavity Download PDFInfo
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- CN101303506B CN101303506B CN2008100395570A CN200810039557A CN101303506B CN 101303506 B CN101303506 B CN 101303506B CN 2008100395570 A CN2008100395570 A CN 2008100395570A CN 200810039557 A CN200810039557 A CN 200810039557A CN 101303506 B CN101303506 B CN 101303506B
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Abstract
The invention discloses an optical differentiator based on a silicon-based annular cavity resonator, which belongs to the field of optical fiber communication technology. The optical differentiator comprises a to-be-differentiated signal generator, a silicon-based annular cavity resonator, and a differentiated signal detecting and monitoring system. The silicon-based annular cavity resonator consists of a silicon-based annulet and a straight waveguide and the air-gap between the annulet and the straight waveguide is from dozens to hundreds of nanometers; the spectra of the silicon-based annular cavity resonator is characterized by periodical band-stop filtering and the transmissivity at the resonant wavelength is equal to 0 or quite close to 0. The principle of the optical differentiator is that when the silicon-based annular cavity resonator meets or is close to a critical coupling state, the spectra characteristic of the silicon-based annular cavity resonator is quite similar to the differentiator within certain range with the resonant wavelength as the center. The optical differentiator manufactured by the device has simple structure, small volume and convenient integration and can be used in an integrated all-optical signal processing system.
Description
Technical field
What the present invention relates to is a kind of light differentiator of technical field of optical fiber communication, particularly a kind of light differentiator based on silicon based annular resonant cavity.
Background technology
It is an emerging optical communication technique that full light signal is handled, and is used to solve the bandwidth bottleneck problem that high-speed electronic components runs into.Light time territory differentiator is to be used for the important devices that full light signal is handled, and can directly carry out the single order of time is led to light signal in the light territory, can be used for fields such as analog-to-digital conversion, shaping pulse, the optical processing of microwave signal.Simultaneously, an extensive integrated development trend that is just becoming optical device.Emerging silicon on insulated substrate provides a good platform for photonic device integrated.Therefore the device that is designed for full light signal processing capacity on integrated silicon on insulated substrate is a popular recently research field.
Find through literature search prior art, people such as Naum K.Berger are published in the optics spy article " Temporal differentiation of optical signals using aphase-shifted fiber Bragg grating " (based on the light time territory differentiator of phase shift optical fiber Bragg grating) of 2006 the 15th volumes soon, the reflectance spectrum of Fiber Bragg Grating FBG that this article utilization has the phase shift of π has the character similar to the differentiator frequency spectrum, can carry out accurately and efficiently single order time domain differential to the gigabit light signal, but weak point is that this differentiator size is bigger, length has a millimeter magnitude, and material is an optical fiber, is unsuitable for integrated on a large scale.
Summary of the invention
The objective of the invention is to overcome deficiency of the prior art, a kind of light differentiator based on silicon based annular resonant cavity is provided, this technology has been utilized the characteristic of the depression filtering that the frequency spectrum with the silicon-based micro ring of single straight waveguide-coupled has, when being operated in the critical coupling state or very near critical coupling state (as the degree of depth greater than 27dB), its transmissivity in the resonance wave strong point is almost 0, therefore (less than three dB bandwidth) has the similar spectral characteristic of differentiator in certain spectral range of resonance wavelength periphery, it is little that this differentiator has a volume, simple in structure, be easy to extensive integrated advantage.
The present invention is achieved by the following technical solutions, the present invention includes: treat differential signal generator, silicon based annular resonant cavity, and input and supervisory system behind the differential.Treat that wherein differential signal generator links to each other with the input of silicon based annular resonant cavity, input links to each other with supervisory system behind the output of silicon based annular resonant cavity and the differential.
The described differential signal generator for the treatment of comprises tunable laser, electric signal generator, electrooptic modulator.Wherein: tunable laser produces continuous laser, a harmonic peak of the corresponding ring resonator of wavelength, its output port links to each other with the input port of electrooptic modulator, the electric signal generator output port links to each other with the rf inputs mouth of electrooptic modulator, electrooptic modulator is responsible for electric signal is modulated on the light, produces the light signal for the treatment of differential.
Described silicon based annular resonant cavity is made of a silicon-based micro ring and a straight wave guide, air-gap between silicon-based micro ring and the straight wave guide is spaced apart tens to the hundreds of nanometer, the silicon based annular resonant cavity spectrum signature is periodic bandreject filtering characteristic, equals 0 or very near 0 in the transmissivity of resonance wave strong point.
Described silicon based annular resonant cavity, changing its frequency spectrum is by changing the air-gap interval between silicon-based micro ring and the straight wave guide, change the degree of coupling between silicon-based micro ring and the straight wave guide, the condition of critical coupling is when the intrinsic loss of silicon-based micro ring and because the loss that coupling causes with straight wave guide when equal.
Input and supervisory system comprise power splitter behind the described differential, power monitor and detection system.Wherein the output of silicon based annular resonant cavity links to each other with the input of power splitter, and the port that the power splitter output power is bigger links to each other with detection system, and the less port of output power links to each other with power monitor.Whether power monitor is used for the monitoring laser wavelength is resonance wavelength, and detection system is used for observing the waveform behind the differential, can adopt oscillograph to detect.
Principle of the present invention is to satisfy or during near the critical coupling state when silicon based annular resonant cavity, and its spectral characteristic in resonance wavelength is the certain limit at center is the well approximate of differentiator.Light differentiator by this element manufacturing is simple in structure, and volume is little, is easy to integratedly, can be used in the integrated full optical signal processing system.
Compared with prior art, the present invention has following beneficial effect: the ring resonator that the present invention uses is simple in structure, and volume is little, and the radius of ring has only several microns to tens differential, and the fiber grating length of using in the prior art is in the millimeter magnitude.In addition, use the material of silicon on insulated substrate as differentiator, make material with optical fiber in compared to existing technology, it is integrated to be easier to large-scale photoelectricity.This is because the technology that silicon on insulated substrate etching etc. are used is compatible fully with the technology of the VLSI (very large scale integrated circuit) of maturation, and extensive integrated photoelectric device can more be saved cost than discrete device.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is embodiment of the invention device and device architecture figure;
Fig. 3 is embodiment of the invention test result figure.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated: present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, present embodiment comprises: treat differential signal generator, silicon based annular resonant cavity, and input and supervisory system behind the differential.Treat that wherein differential signal generator links to each other with the input of silicon based annular resonant cavity, input links to each other with supervisory system behind the output of silicon based annular resonant cavity and the differential.
The described differential signal generator for the treatment of comprises tunable laser, electric signal generator, electrooptic modulator.Wherein: tunable laser produces continuous laser, a harmonic peak of the corresponding ring resonator of wavelength, its output port links to each other with the input port of electrooptic modulator, the electric signal generator output port links to each other with the rf inputs mouth of electrooptic modulator, electrooptic modulator is responsible for electric signal is modulated on the light, produces the light signal for the treatment of differential.
Described silicon based annular resonant cavity comprises that one is adopted little ring that silicon on insulated substrate makes and one to lean on very closely the straight wave guide of (between air-gap be spaced apart tens to the hundreds of nanometer) with it.The spectral characteristic of the ring resonator of this structure is the filtering of periodic depression, also is periodic bandreject filtering.Degree of depth of its depression filtering depends on the distance between little ring and straight wave guide and the loss of little ring.When the interval of little ring and straight wave guide makes that appropriately ring resonator is operated in the critical coupling state, be 0 in the transmissivity of resonance wave strong point ring resonator, promptly the light signal of resonance wavelength can not pass through ring resonator fully.This moment, the spectral characteristic (less than three dB bandwidth of frequency spectrum) in resonance wavelength is the certain limit at center of ring resonator was spectral characteristic well approximate of differentiator, therefore, the present invention can carry out the time domain differential to the light signal of (less than the three dB bandwidth of frequency spectrum) under certain bandwidth constraints.
Input and supervisory system comprise power splitter behind the described differential, power monitor and detection system.Wherein the output of silicon based annular resonant cavity links to each other with the input of power splitter, and the port that the power splitter output power is bigger links to each other with detection system, and the less port of output power links to each other with power monitor.Whether power monitor is used for the monitoring laser wavelength is resonance wavelength, and detection system is used for observing the waveform behind the differential, can adopt oscillograph to detect.
As shown in Figure 2, for embodiment the light signal of class gaussian-shape is carried out the situation of differential.Fig. 2 (a) is an Experimental equipment.Wavelength is about the light carrier of the tunable light source output of 1554.46nm and gives electrooptic modulator.Electrooptic modulator comprise Mach zehnder modulators with and the front be used for controlling first Polarization Controller of its polarization state.The bias voltage of Mach zehnder modulators is about 3.1V.Electric signal generator comprises that sinusoidal signal generator is used for producing the sinusoidal signal of 10GHz and electric amplifier can drive Mach zehnder modulators with generation electric signal.The light signal that is produced is that dutycycle is 50% class gaussian-shape pulse.The electrooptic modulator part also comprises the insertion loss of first Erbium-Doped Fiber Amplifier (EDFA) with compensation Mach zehnder modulators.The Erbium-Doped Fiber Amplifier (EDFA) amplification links to each other with second Polarization Controller of silicon based annular resonant cavity system again.Second Polarization Controller is used to control the polarization state of the light signal that enters into silicon based annular resonant cavity, makes it to be transverse electric field mould.Power splitter behind the differential in system's detection and the supervisory system is the 95:5 power splitter, and wherein the light of 95% part connects optical detection system, comprises that the second Erbium-Doped Fiber Amplifier (EDFA) amplification and optical band pass filter and oscillograph are used for observing its waveform.The light of other 5% part is input to power monitor and is used for supervisory signal wavelengths and whether is positioned at the resonance wave strong point.Fig. 2 (b) is the structural drawing of the silicon based annular resonant cavity used of embodiment.Fig. 2 (b-i) is the vertical view of silicon based annular resonant cavity.The silicon-based micro ring radius is 40 microns, and little ring and straight wave guide are wide all to be 450 nanometers, and the clearance between straight wave guide and the ring is 90 nanometers.Fig. 2 (b-ii) is the cross sectional representation of silicon-based micro ring.The silicon structure the top that is used for making on the insulator of silicon-based micro ring is the monocrystalline silicon of 250 nanometer thickness, and the centre is the silicon dioxide cushion of 3 micron thickness, and the bottom is the silicon substrate of 525 micron thickness.
As shown in Figure 3, be embodiment of the invention test result figure.Fig. 3 (a) is the harmonic peak of the silicon-based micro ring that records and the spectrogram that obtains by match, and the harmonic peak degree of depth is about 27.5dB among Fig. 3 (a), shows ring resonator very near the critical coupling state, and three dB bandwidth is about 0.34nm; Fig. 3 (b) and Fig. 3 (c) are respectively the class gaussian-shape light signal that produces into optical signal generator, and the light signal behind the differential.Be the pulse of two symmetries in theory on light intensity behind the Gauss pulse differential, visible experimental result is very approaching with theoretical differential effect, thereby has proved the feasibility of this differentiator.
Claims (4)
1. light differentiator based on silicon based annular resonant cavity, comprise: treat differential signal generator, silicon based annular resonant cavity, and input and supervisory system behind the differential, treat that differential signal generator links to each other with the input of silicon based annular resonant cavity, input links to each other with supervisory system behind the output of silicon based annular resonant cavity and the differential, it is characterized in that, described silicon based annular resonant cavity is made of a silicon-based micro ring and a straight wave guide, air-gap between silicon-based micro ring and the straight wave guide is spaced apart tens to the hundreds of nanometer, the silicon based annular resonant cavity frequency spectrum is periodic bandreject filtering characteristic, equal 0 or very near 0 in the transmissivity of resonance wave strong point, silicon based annular resonant cavity is operated in the critical coupling state or very near the critical coupling state.
2. the light differentiator based on silicon based annular resonant cavity according to claim 1, it is characterized in that, described silicon based annular resonant cavity, changing its frequency spectrum is by changing the air-gap interval between silicon-based micro ring and the straight wave guide, change the degree of coupling between silicon-based micro ring and the straight wave guide, the condition of critical coupling is when the intrinsic loss of silicon-based micro ring and because the loss that coupling causes with straight wave guide when equal.
3. the light differentiator based on silicon based annular resonant cavity according to claim 1, it is characterized in that, the described differential signal generator for the treatment of comprises tunable laser, electric signal generator, electrooptic modulator, wherein: tunable laser produces continuous laser, a harmonic peak of the corresponding ring resonator of wavelength, its output port links to each other with the input port of electrooptic modulator, the electric signal generator output port links to each other with the rf inputs mouth of electrooptic modulator, electrooptic modulator is responsible for electric signal is modulated on the light, produces the light signal for the treatment of differential.
4. the light differentiator based on silicon based annular resonant cavity according to claim 1, it is characterized in that, input and supervisory system comprise power splitter, power monitor and detection system behind the described differential, wherein the output of silicon based annular resonant cavity links to each other with the input of power splitter, the port that the power splitter output power is bigger links to each other with detection system, the less port of output power links to each other with power monitor, whether power monitor is used for the monitoring laser wavelength is resonance wavelength, and detection system is used for observing the waveform behind the differential.
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| CN101834669B (en) * | 2010-04-02 | 2012-09-05 | 上海交通大学 | Frequency shift keying (FSK) optical modulation signal generator based on silicon-based micro ring resonator |
| CN103760734B (en) * | 2013-08-12 | 2016-10-05 | 西南交通大学 | The full light differentiator of restructural based on Differential Group Delay |
| CN104375354A (en) * | 2014-11-06 | 2015-02-25 | 上海交通大学 | Dimmable differential equation solver based on interference couplers and silica-based micro-ring resonant cavity |
| CN104991397B (en) * | 2015-07-06 | 2018-07-27 | 上海交通大学 | Silicon based annular resonant cavity structure for solving second order differential equation |
| CN105785603B (en) * | 2016-02-29 | 2019-02-15 | 北京交通大学 | Multi-wavelength light differentiator based on optical fiber Sagnac ring |
| CN105759197B (en) * | 2016-03-28 | 2018-06-12 | 工业和信息化部电子第五研究所 | DDS devices single particle effect unusual waveforms capture systems and its catching method |
| JP6802761B2 (en) * | 2017-06-26 | 2020-12-16 | 日本電信電話株式会社 | Optical pulse generator |
| CN107947864B (en) * | 2017-12-04 | 2020-02-18 | 大连理工大学 | Photon microwave down-conversion device and method |
| CN110018428B (en) * | 2019-04-29 | 2021-02-09 | 重庆大学 | Magnetic field sensor based on silicon-based micro-ring resonator and preparation method thereof |
| CN111458908A (en) * | 2020-04-09 | 2020-07-28 | 联合微电子中心有限责任公司 | Micro-ring electro-optical modulator based on lithium niobate single crystal thin film and use method and application thereof |
| CN111736370A (en) * | 2020-06-12 | 2020-10-02 | 南京中电芯谷高频器件产业技术研究院有限公司 | Thin-film lithium niobate-based integrated chip and preparation method thereof |
| CN112202048B (en) * | 2020-10-09 | 2022-02-01 | 联合微电子中心有限责任公司 | External cavity laser, preparation method thereof and wavelength tuning method |
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