CN101293629A - Process for producing carbon nano-tube or nano-wire bifurcate structure - Google Patents
Process for producing carbon nano-tube or nano-wire bifurcate structure Download PDFInfo
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- CN101293629A CN101293629A CNA2008100043317A CN200810004331A CN101293629A CN 101293629 A CN101293629 A CN 101293629A CN A2008100043317 A CNA2008100043317 A CN A2008100043317A CN 200810004331 A CN200810004331 A CN 200810004331A CN 101293629 A CN101293629 A CN 101293629A
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Abstract
The invention discloses a method for preparing a carbon nanometer pipe or a nanometer line bifurcation structure. The method comprises: a chip which comprises a pair of parallel electrodes and a plurality of floating point electrodes arranged between the parallel electrodes is prepared, the carbon nanometer pipes and/or nanometer lines are dissolved in organic solvent, and ultrasonic dispersion is carried out to prepare the suspension of the carbon nanometer pipes and/or nanometer lines, the chip is dipped in the suspension, AC or DC is applied on the electrodes, the chip taken out and dried, so as to gain two or more carbon nanometer pipes and/or nanometer line bifurcation structures between the floating point electrodes. The method of the invention gains a Y-shaped or T-shaped bifurcation structure which has good controllability, simple method and high efficiency by using alternating electric field or alternating induction electric field; meanwhile, as the gained bifurcation structure is connected with the electrodes, the bifurcation junction device or junction device array can be realized on the same chip in-situ, thus providing a novel integration method for nano-electronic devices.
Description
Technical field
The invention relates to the processing method of CNT, specifically, is the preparation method about CNT or nano wire bifurcation structure.
Background technology
CNT and semiconductor nanowires can be used for the novel nano-material of nanometer electronic device.In recent years, successfully developed based on CNT or the various novel nanometer electronic devices of semiconductor nanowires, wherein the most outstanding is junction device (molecule knot or the heterogeneous device of nano wire).For CNT or semiconductor nanowires being made the junction device of nanoscale, can select the CNT or the semiconductor nanowires of Y shape or T shape bifurcation structure for use, utilize in Y shape or the T shape bifurcation structure the different electrology characteristics of CNT in each branch or nano wire, can construct junction device with rectification characteristic, even the CNT construction logic door of report with single Y shape bifurcation structure arranged, because the type device size is little, and have can be integrated advantage, very be subjected to researcher's concern.
At present, preparation CNT and nano wire Y shape bifurcation structure mainly are to obtain by direct chemical is synthetic, method mainly contains three: (1) prepares Y shape CNT or semiconductor nanowires (B.C.Satishkumar etal. by chemical vapor deposition (CVD), Applied Physics Letters 77,2530 (2000)); (2) utilize porous alumina formwork, earlier the aluminium oxide passage is prefabricated into Y shape, utilize electrochemical deposition to obtain nano wire then, remove aluminium oxide and can obtain Y shape nano wire (Y.Tan et al., Appl.Phys.Lett., 85,967 (2004)); (3) with alumina formwork and chemical vapour deposition (CVD) in conjunction with preparation Y shape CNT (CPapadopoulos et al., Phys.Rev.Lett.85,3476 (2000); Guowen Meng et al., PNAS 102,7074 (2005)).Utilize chemical gaseous phase depositing process to prepare Y shape structure, its process be at random, controllability is very poor; Utilizing alumina formwork and electrochemical deposition, owing to need utilize oxidation-reduction reaction, mainly be to be used to prepare metal nanometer line therefore, and the preparation semiconductor nanowires is very difficult; With alumina formwork and chemical vapour deposition (CVD) combination, though controllability is good, what obtained mainly is multi-walled carbon nano-tubes, and fault of construction is more.
Summary of the invention
The present invention has overcome deficiency of the prior art, utilizes polarization phenomena and the electrophoretic force effect in alternating electric field of CNT or semiconductor nanowires, and the preparation method of the bifurcation structure of a kind of CNT or nano wire is provided.
Technical scheme of the present invention is:
The preparation method of a kind of CNT or nano wire bifurcation structure, its step comprises:
1) preparation chip, this chip comprises several floating-point electrodes between pair of parallel electrode and the parallel pole;
2) CNT and/or nano wire are dissolved in the organic solvent, and carry out ultrasonic dispersion, make the suspension of CNT and/or nano wire;
3) chip is immersed in the described suspension, on above-mentioned electrode, applies alternating current or direct current;
4) take out chip, dry up, between the floating-point electrode, obtain two or many CNTs and/or nano wire bifurcation structure.
In the described step 1), prepare metal electrode by photoetching in the microelectronic processing technology and lift-off technology, the relative distance of parallel pole is 1-10 μ m, and in the described step 1), the adjacent electrode of floating-point electrode distance is 200-500nm.
Described organic solvent is ethanol, acetone, n-hexane, isopropyl alcohol, dimethyl formamide, 1, the 2-dichloroethanes.
Described semiconductor nanowires is: simple substance element nano wire or compound semiconductor nano wire.
Described CNT is: SWCN, multi-walled carbon nano-tubes or SWCN are assembled the tube bank that forms.
In the described step 3), electrode applies alternating current, and the parameter area of the alternating current that specifically applies is V
PP=0.5-25V, frequency 1-10MHZ.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention utilizes the induction field acquisition Y of alternating electric field or alternation or the bifurcation structure of T shape by the electric field of design ad hoc structure, and its controllability is good, method is simple, efficient is high; Not only CNT can be prepared, the Y or the T shape bifurcation structure of semiconductor nanowires can be prepared again, the perhaps Y or the T shape bifurcation structure that mix of CNT and semiconductor nanowires, and can obtain a large amount of bifurcation structures by the present invention.The particularly important is because the bifurcation structure that obtained links to each other with electrode, can be on same chip in-situ accomplishes bifurcated junction device or junction device array, for nanometer electronic device provides new integrated approach.
Description of drawings
Fig. 1 prepares the combined electrode structure schematic diagram of CNT or nano wire bifurcation structure;
Fig. 2 prepares CNT or nano wire bifurcation structure Experimental equipment;
Fig. 3 prepares the schematic diagram of CNT or nano wire bifurcation structure;
Fig. 4 bifurcation structure scan electrode photo: (aY shape CNT: (b) T shape CNT.
The specific embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
CNT and/or semiconductor nanowires are scattered in the organic solvent, and solvent is included as ethanol, acetone, n-hexane, isopropyl alcohol, dimethyl formamide, 1,2-dichloroethanes or deionized water etc.Before the bifurcation structure of preparation Y shape, solution need pass through long-time ultrasonic dispersion, makes the homodisperse suspension of CNT or semiconductor nanowires.Used CNT is: SWCN, multi-walled carbon nano-tubes or CNT tube bank; Semiconductor nanowires is: and simple substance element nano wire (Si, Ge) and compound semiconductor (GaN, InP, CdS etc.) nano wire.
Be preparation Y shape CNT and nano wire bifurcation structure, the metal electrode of design micro-meter scale.Electrode is the composite construction of parallel pole 1 and floating-point electrode 2, the cylindrical floating-point electrode 2 of plurality of rows (as Fig. 1) promptly is set between the electrode 1 of an opposing parallel, the adjacent cylindrical floating-point electrode 2 of two rows can equidistantly be arranged, certain distance also can stagger, wherein: the spacing between the parallel pole 1 is at the 10-20 mu m range, and the spacing between the floating-point cylinder 2 of arest neighbors is at 2-5 μ m; Two kinds of electrode materials all can be Ti/Au, Al, thickness of electrode＞50nm.In case the parallel metal electrode is connected with signal generator 3, can between cylindrical floating-point electrode 2, produce the induction field that lotus root is closed.Metal electrode utilizes photoetching and stripping technology preparation, and its process is: whirl coating photoetching, exposure, development; The sputtering sedimentation metal removes photoresist then, can obtain metal electrode.Chip substrate is the silica (thickness＞100nm) of P type heavily doped silicon and thermal oxide growth.
The chip 4 of the containing metal electrode made is inserted sulculuses 5 (as Fig. 2), fill the suspension 6 of carbon nanotubes or semiconductor nanowires in the sulculus 5, chip 4 is immersed in solution 6.External wire 7 is connected with signal generator 3, and the power supply of connection signal generator can apply AC field on electrode, thereby produces the induction field of alternation between cylindrical floating-point electrode 2.
Under the effect of AC field, produce inhomogeneous field between the electrode, polarization phenomena take place in CNT or semiconductor nanowires under inhomogeneous field, the positive and negative electric charge of meeting due to CNT or nanowire surface and inner generation instantaneous polarization, thereby make CNT or nano wire because of polarization forms dipole, in solution, form dipole moment.
Remove this, all can be subjected to dielectrophoresis power when dielectric particle is in the inhomogeneous field, it not necessarily requires dielectric particle charged, and any particle all shows certain dielectrophoresis characteristic in electric field, so the present invention all is suitable for CNT and nano wire.The intensity of DEP mainly contains the electrology characteristic decision of medium and particle, and is subjected to the size of particle, the influence of shape and electric field frequency.Under the alternating current effect, CNT or nano wire in solution because of dipole moment and alternating current electrophoresis power, make its direction that descends along electric-force gradient shift to electrode rapidly or shift on the end that is overlapped on the CNT on the electrode, thereby make two or many CNTs or semiconductor nanowires form Y shape bifurcation structure.The CNT or the semiconductor nanowires that link to each other can form two or more Y shape bifurcation structures (as Fig. 3).
Be continuously applied electric field, behind the wait certain hour, turn off additional power source, take out chip, dry up the Y shape bifurcation structure that can between cylindrical floating-point electrode, obtain some., the quantity of Y shape bifurcation structure can be regulated by the concentration of control alternating electric field intensity, CNT or semiconductor nanowires solution.Used experiment parameter is: sinusoidal signal, voltage are 10V (Vpp), frequency 16MHz, and the time that applies voltage is 20 minutes.Be illustrated in figure 4 as and contain Y shape (Fig. 4 a) and the stereoscan photograph of T shape (Fig. 4 b) bifurcation structure CNT.
More than by specific embodiment method provided by the present invention has been described, it will be understood by those of skill in the art that in the scope that does not break away from essence of the present invention, can make certain deformation or modification to the present invention; Its preparation method also is not limited to disclosed content among the embodiment.
Claims (7)
1, the preparation method of a kind of CNT or nano wire bifurcation structure, its step comprises:
1) preparation chip, this chip comprises several floating-point electrodes between pair of parallel electrode and the parallel pole;
2) CNT and/or nano wire are dissolved in the organic solvent, and carry out ultrasonic dispersion, make the suspension of CNT and/or nano wire;
3) chip is immersed in the described suspension, on above-mentioned electrode, applies alternating current or direct current;
4) take out chip, dry up, between the floating-point electrode, obtain two or many CNTs and/or nano wire bifurcation structure.
2, the preparation method of CNT as claimed in claim 1 or nano wire bifurcation structure is characterized in that, in the described step 1), prepares metal electrode by photoetching in the microelectronic processing technology and lift-off technology, and the relative distance of parallel pole is 1-10 μ m.
3, the preparation method of CNT as claimed in claim 1 or 2 or nano wire bifurcation structure is characterized in that, in the described step 1), the adjacent electrode of floating-point electrode distance is 200-500nm.
4, the preparation method of CNT as claimed in claim 1 or nano wire bifurcation structure is characterized in that, described organic solvent is ethanol, acetone, n-hexane, isopropyl alcohol, dimethyl formamide, 1, the 2-dichloroethanes.
5, as the preparation method of claim 1 or 4 described CNTs or nano wire bifurcation structure, it is characterized in that described semiconductor nanowires is: simple substance element nano wire or compound semiconductor nano wire.
6, as the preparation method of claim 1 or 4 described CNTs or nano wire bifurcation structure, it is characterized in that described CNT is: SWCN, multi-walled carbon nano-tubes or SWCN are assembled the tube bank that forms.
7, the preparation method of CNT as claimed in claim 1 or nano wire bifurcation structure is characterized in that, in the described step 3), electrode applies alternating current, and the parameter area of the alternating current that specifically applies is V
PP=0.5-25V, frequency 1-10MHZ.
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| CN2008100043317A CN101293629B (en) | 2007-06-08 | 2008-01-22 | Process for producing carbon nano-tube or nano-wire bifurcate structure |
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| CN2008100043317A CN101293629B (en) | 2007-06-08 | 2008-01-22 | Process for producing carbon nano-tube or nano-wire bifurcate structure |
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| CN101293629B CN101293629B (en) | 2010-09-08 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107538012A (en) * | 2017-07-17 | 2018-01-05 | 哈尔滨工业大学深圳研究生院 | A kind of nano wire or nano-device and the metallurgical method being connected of nano metal electrode |
| CN111470492A (en) * | 2019-11-21 | 2020-07-31 | 中山大学 | Preparation method of one-dimensional carbon chain |
| CN111470488A (en) * | 2019-10-16 | 2020-07-31 | 中山大学 | Growth method of one-dimensional carbon chain |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102012204838A1 (en) * | 2012-03-27 | 2013-10-02 | Robert Bosch Gmbh | Method for manufacturing carbon-nano wires used in electrical components, involves arranging suspension of soot particles and/or carbon nano wires so that suspension and nano wires are exposed to electric field between electrons |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1325372C (en) * | 2001-07-27 | 2007-07-11 | 萨里大学 | Production of carbon nanotubes |
| CN1171781C (en) * | 2002-06-18 | 2004-10-20 | 中国科学院化学研究所 | Process for preparing tree-shaped carbon nano tube |
| KR100708540B1 (en) * | 2004-02-09 | 2007-04-18 | (주)케이에이치 케미컬 | The preparation of y-branched carbon nanotubes |
| KR20060047145A (en) * | 2004-11-15 | 2006-05-18 | 삼성에스디아이 주식회사 | A carbon nanotube, an emitter comprising the carbon nanotube and an electron emission device comprising the emitter |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107538012A (en) * | 2017-07-17 | 2018-01-05 | 哈尔滨工业大学深圳研究生院 | A kind of nano wire or nano-device and the metallurgical method being connected of nano metal electrode |
| CN111470488A (en) * | 2019-10-16 | 2020-07-31 | 中山大学 | Growth method of one-dimensional carbon chain |
| CN111470492A (en) * | 2019-11-21 | 2020-07-31 | 中山大学 | Preparation method of one-dimensional carbon chain |
| CN111470492B (en) * | 2019-11-21 | 2022-01-28 | 中山大学 | Preparation method of one-dimensional carbon chain |
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