CN101290901A - Wafer quality analysis method and device - Google Patents
Wafer quality analysis method and device Download PDFInfo
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- CN101290901A CN101290901A CNA2007101265936A CN200710126593A CN101290901A CN 101290901 A CN101290901 A CN 101290901A CN A2007101265936 A CNA2007101265936 A CN A2007101265936A CN 200710126593 A CN200710126593 A CN 200710126593A CN 101290901 A CN101290901 A CN 101290901A
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Abstract
The invention discloses a method for analyzing the quality of a wafer. The method is as follows: a failure distribution pattern of the wafer is determined through the following judgments and then the quality of the wafer is analyzed according to the failure distribution pattern of the wafer: firstly, judgment is made whether the good product ratio of a whole box of wafers is lower than a set value and whether the result under a test item is within a set range; secondly, judgment is made whether the failure crystal grain distribution condition of the whole box of the wafers under the test item belongs to a known failure distribution pattern; thirdly, judgment is made whether a determined retention pattern of the whole box of the wafers occurs during the process of failure crystal grain distribution of the whole box of the wafers under the test item; fourthly, judgment is made whether a determined retention pattern of a single wafer occurs during the process of failure crystal grain distribution of the single wafer. The method for analyzing the quality of the wafer is objective and short in analysis time.
Description
Technical field
The present invention relates to method and the device analyzed for wafer quality according to the wafer quality testing result.
Background technology
At present, wafer manufacturing process all exigent accuracy aspect technology controlling and process, operation of equipment and made.A mistake just might cause scrapping fully of wafer.In whole technical process, the assessment of wafer and processing quality quality is by a large amount of tests and measures.Wherein, the wafer yield be weigh the wafer performance produced whether reliable one than important index.And the yield of wafer is subjected to the restriction of many aspects, and for example, wafer is broken all can to exert an influence to the yield of wafer with bending, manufacturing process variation, manufacturing process defective and lithography mask version defective.For the performance of the wafer that guarantees to offer at last the client, just need carry out quality analysis for wafer through test, reject the wafer that does not meet quality requirement.Usually reject the wafer that does not meet quality requirement and all be by the inefficacy crystal grain distribution pattern of wafer and known defective wafer is compared and achieve the goal, for example, U.S. Patent number is 7106897 disclosure of the Invention a kind of being used for the wafer system that the underproof inefficacy distribution pattern of existing affirmation wafer in crystal grain distribution pattern and inefficacy distribution pattern storehouse compares that lost efficacy, comprise the device that is used to discern wafer inefficacy distribution pattern and the corresponding normalization of generation data combination, and described normalization data combination and system are had the analytical equipment that the data combination of confirming in the underproof inefficacy distribution pattern of the wafer storehouse compared and produced respective identification.This system can be used to discern underproof wafer, and underproof wafer can be used as useless sheet and disposes.
But actual conditions from wafer quality analysis, sometimes can not confirm the quality of wafer according to the quality testing result at once, though there are some crystal grain not have to pass through the detection of some test events on some wafer, but it is underproof not representing wafer, these wafers can be used as quality processing undetermined, confirm that by further detection quality is qualified or defective again.In the present technological process, after yield test, can obtain yield and inefficacy crystal grain and distribute through wafer.Total be exactly the yield percentage of the grains constitute wafer number of die by all test events on the wafer in fact.And the distribution of inefficacy crystal grain is to pass through after a series of tests of yield test, on the full wafer wafer by the crystal grain of all tests and the distribution situation that crystal grain presented by a certain test event not, for example, wafer is carried out four tests, as shown in figure 12, to be labeled as 1 by the crystal grain of all tests, and four tests of first test to the are labeled as 2 respectively, 3,4,5, crystal grain does not have by the label of this test event with regard to this test event correspondence on the mark, for example crystal grain just is not labeled as 2 by second test, crystal grain just is not labeled as 5 by the 4th test, will present by the represented wafer distribution situation of various marks on the final wafer.
And the engineer can analyze the quality requirement whether wafer meets the client by the visual inspection wafer according to yield and the distribution of inefficacy crystal grain that the yield test obtains.For example, if yield and inefficacy crystal grain distribution results are the known client's quality requirements that meets, the engineer will be considered as wafer qualified and deliver to follow-up flow process.If yield and inefficacy crystal grain distribution results are the defective types of known wafer, the engineering sheet that then wafer can be cancelled is handled.If but yield crosses low or the inefficacy crystal grain distribution results that other were not met occurs, the engineer can keep somewhere wafer as quality wafer undetermined, so that further analyze the quality requirement that determines whether meeting the client for these wafers.In the practical operation, 80% wafer just can be sent to follow-up flow process according to letter sorting result separately after through 1-2 hour, and the major part in 20% the wafer of being kept somewhere is through further a series of inspections, for example the section of Electronic Testing failure analysis and physics is analyzed, and is sent to the corresponding subsequent flow process according to check result.The difficult wafer of differentiating its quality quality of Sheng Xia some then might be kept somewhere the longer time at last, and usually, the engineer may could handle these remaining wafers at second day.Therefore, for prior art, because engineer's visual inspection all is the perusal that relies on the engineer, there is certain subjectivity, different engineers also can be different for the analysis viewpoint of the yield test result of not meeting, thereby cause the unstable result of wafer quality analysis, and the time of wafer quality analysis is longer, can not in time consigns to the client.
Summary of the invention
The problem that the present invention solves is that wafer quality analysis is subjective in the prior art, causes the wafer quality analysis unstable result.
The problem that the present invention also solves is that the time of prior art wafer quality analysis is longer, can not in time consign to the client.
For addressing the above problem, the invention provides a kind of wafer quality analysis method, comprise the following steps,
Whether the yield of judging whole box wafer is lower than set point and the result under test event whether in setting range;
If the yield of whole box wafer is lower than set point or the result under test event not in setting range, then will puts in order the box wafer and keep somewhere;
If the yield of whole box wafer is greater than or equal to set point and the result under test event in setting range, then judge whether the inefficacy distribution pattern that belongs to known according to the whole inefficacy crystal grain distribution situation of box wafer under test event;
If the whole inefficacy crystal grain distribution situation of box wafer under test event belongs to known inefficacy distribution pattern, then judge that according to known inefficacy distribution pattern whole box wafer quality is qualified or quality is undetermined;
If the whole inefficacy crystal grain distribution situation of box wafer under test event do not belong to known inefficacy distribution pattern, then judge the whole box wafer indwelling type that the inefficacy crystal grain of whole box wafer under test event distributes and whether occurs judging;
The whole box wafer that occurs judging is kept somewhere type if the inefficacy crystal grain of whole box wafer under test event distributes, and then will put in order the box wafer and keep somewhere;
If the whole box wafer that judging does not appear in the inefficacy crystal grain distribution of whole box wafer under test event is kept somewhere type, then judge the single-wafer indwelling type that the inefficacy crystal grain of single-wafer under test event distributes and whether occurs judging successively;
The single-wafer that occurs judging is kept somewhere type if the inefficacy crystal grain of single-wafer under test event distributes, and then will put in order the box wafer and keep somewhere;
The single-wafer that does not occur judging is kept somewhere type if the inefficacy crystal grain of single-wafer under test event distributes, and then whole box wafer quality is qualified.
Correspondingly, the present invention also provides a kind of wafer quality analysis apparatus, comprise,
According to wafer yield and the range of results under test event set, in conjunction with the yield and the result under test event of the wafer that receives wafer is screened, and will meet the screening plant that the inefficacy crystal grain distribution situation of the wafer of setting sends;
The inefficacy crystal grain distribution situation that the receiving screen screening device sends, and itself and known failure distribution pattern contrasted mate, and the coalignment of transmission matching result;
According to the matching result that coalignment sends, judge and send the analytical equipment of analysis result for the quality of whole box wafer.
Compared with prior art, the present invention has the following advantages:
1. wafer quality analysis method of the present invention is with the inefficacy crystal grain distribution of analyzed wafer and known inefficacy distribution pattern and the whole box wafer indwelling type of judgement and the inefficacy distribution pattern that single-wafer indwelling type is compared and judged wafer, and carry out quality analysis according to the inefficacy distribution pattern, therefore more objective, avoided the situation of the unstable result of quality analysis.
2. wafer quality analysis method of the present invention is respectively by the inefficacy distribution situation of whole box wafer in location and single-wafer, makes inefficacy distribution pattern more remarkable of wafer, and the process of judgement is also quicker, so the quality analysis time of wafer is also shorter.
Description of drawings
Fig. 1 is a wafer quality analysis method flow chart of the present invention;
Fig. 2 is wafer quality analysis apparatus figure of the present invention;
Fig. 3 is the whole box wafer analysis process figure of wafer quality analysis method of the present invention;
Fig. 4 is the single-wafer analysis process figure of wafer quality analysis method of the present invention;
Fig. 5 A to Fig. 5 B is the schematic diagram that regional dense distribution situation appears in the inefficacy crystal grain of whole box wafer;
Fig. 6 is the schematic diagram that equidistant distribution situation appears in the inefficacy crystal grain of whole box wafer;
Fig. 7 is the schematic diagram that the inefficacy crystal grain of whole box wafer appears at continuous distribution situation on line direction or the column direction;
Fig. 8 is the schematic diagram of the inefficacy uniform crystal particles distribution situation of single-wafer;
Fig. 9 is the schematic diagram that the inefficacy crystal grain of single-wafer appears at continuous distribution situation on line direction or the column direction;
Figure 10 is the schematic diagram that regional dense distribution situation appears in the inefficacy crystal grain of single-wafer;
Figure 11 is the schematic diagram that the periodic points distribution situation appears in the inefficacy crystal grain of single-wafer;
Figure 12 is an inefficacy crystal grain distribution signature on the wafer.
Embodiment
Wafer quality analysis method of the present invention is with the inefficacy crystal grain distribution of analyzed wafer and known inefficacy distribution pattern and the whole box wafer indwelling type of judgement and the inefficacy distribution pattern that single-wafer indwelling type is compared and judged wafer, and carries out quality analysis according to the inefficacy distribution pattern.
With reference to shown in Figure 1, wafer quality analysis method of the present invention comprises the steps,
And correspondingly, with reference to shown in Figure 2, the screening plant 21 of wafer quality analysis apparatus of the present invention can screen for wafer in the result under the test event according to the yield of wafer and the wafer that obtains in the yield test process.For example, according to requirement of client, the yield of setting whole box wafer must not be lower than 90%, and the result of various test events is within the scope of setting, and screening plant 21 just will screen for whole box wafer in conjunction with the yield and the test result under test event of whole box wafer as screening criteria with this so.Certainly, described yield is according to different client's needs and fixed, and since test event have a variety of, for example open circuit/short circuit test, the self-built functional test of sweep test and system etc., the setting range of results under different test events also can be different.
And correspondingly, continue with reference to shown in Figure 2, according to the test result under wafer yield that obtains and the test event, if the yield of whole box wafer be lower than 90% or the result under test event be in outside client's setting range, screening plant 21 can send according to described screening criteria and represent signal that these box wafer needs are kept somewhere with this box wafer indwelling so.
Described known failure distribution pattern comprises the inefficacy distribution pattern that inefficacy distribution pattern that known representative wafer quality is qualified and known representative wafer need further detect.The inefficacy distribution pattern that known representative wafer is qualified is some inefficacy crystal grain distribution patterns of judging in advance, these inefficacy crystal grain distribution patterns are through detecting the distribution pattern that is considered to be within can received wafer process deviation range, and the distribution pattern of the inefficacy crystal grain that the inefficacy distribution pattern that known representative wafer need further detect also is some to be judged in advance, the distribution pattern of these inefficacy crystal grain is be considered to wafer and may have distribution pattern than major defect through detecting, therefore quality is undetermined, need by further detection means, for example the section of analysis of electronics failure detection and physics is analyzed further to analyze and just may be obtained definite quality analysis result.
And correspondingly, continue with reference to shown in Figure 2, according to the test result under wafer yield that obtains and the test event, the yield that screening plant 21 will be put in order the box wafer according to described screening criteria is higher than 90%, and the inefficacy crystal grain distribution situation of this box wafer under test event that the result under test event is in the setting range carried out record, as described above, writes down as shown in figure 12, by the represented wafer inefficacy crystal grain distribution situation of various figure notations, and send to coalignment 22.And coalignment 22 is after the represented wafer inefficacy crystal grain distribution situation by various figure notations that receives that screening plant 21 sends, this distribution situation and the known failure distribution pattern of itself storing can be contrasted, analyze the inefficacy distribution situation that receives and whether mate with known inefficacy distribution pattern.
Step 4 if the whole inefficacy crystal grain distribution situation of box wafer under test event belongs to known inefficacy distribution pattern, then judges that according to known inefficacy distribution pattern whole box wafer quality is qualified or quality is undetermined.Aforesaid, if the inefficacy crystal grain distribution situation of this box wafer belongs to the known qualified inefficacy distribution pattern of representative wafer, can judge directly that then this box wafer quality is qualified, if and the inefficacy crystal grain distribution situation of this box wafer belongs to the inefficacy distribution pattern that known representative wafer quality need undetermined further detect, then this box wafer quality of decidable is undetermined.
And correspondingly, continue with reference to shown in Figure 2, if coalignment 22 is after the inefficacy crystal grain distribution situation of the whole box wafer that will receive and known failure distribution pattern contrast, find that this box wafer and a kind of known failure distribution pattern are complementary, coalignment 22 can send and the corresponding matched signal of this known failure distribution pattern to analytical equipment 23.And if coalignment 22 finds that the inefficacy crystal grain distribution situation of these box wafers has comprised two or more known failure distribution pattern simultaneously, will send and this two or more the corresponding matched signal of known failure distribution pattern to analytical equipment 23.And analytical equipment 23 will be according to the matched signal that receives, by the known failure distribution pattern of matched signal correspondence the inefficacy distribution situation of this box wafer to be measured is carried out type and divide, and send the qualified and wafer quality analysis result undetermined of wafer quality according to aforesaid two kinds of known failure distribution patterns.For example, when analytical equipment 23 receives the matched signal of the qualified inefficacy distribution pattern of a kind of wafer quality of representative, will send the qualified analysis result of this box wafer quality.If when analytical equipment 23 receives the matched signal of a kind of wafer quality of representative inefficacy distribution pattern undetermined, will send this box wafer quality analysis result undetermined.If analytical equipment 23 receives the matched signal of the qualified inefficacy distribution pattern of the wafer quality of representing two or more, will send this box wafer quality analysis result undetermined.Because if the inefficacy crystal grain distribution situation of whole box wafer comprises two or more qualified inefficacy distribution pattern, may cause the full wafer wafer to lose efficacy so, also may not can cause the full wafer wafer to lose efficacy, doing like this is wafer quality in order to guarantee to dispatch from the factory at last.
Step 5 if the whole inefficacy crystal grain distribution situation of box wafer under test event do not belong to known inefficacy distribution pattern, is then judged the whole box wafer indwelling type that the inefficacy crystal grain of whole box wafer under test event distributes and whether occurs judging.If judgement according to step 3, the inefficacy crystal grain distribution situation of whole box wafer does not belong to known inefficacy distribution pattern, then in order to make the process of judging wafer inefficacy distribution pattern more directly perceived, the whole box wafer indwelling type that the inefficacy crystal grain of whole box wafer distributes and whether occurs judging is judged in meeting earlier.Described whole box wafer is kept somewhere type and just is meant when the situation of setting appears in the inefficacy crystal grain distribution of whole box wafer, needs to put in order the box wafer and keeps somewhere to treat further detection.
And correspondingly, when if whole box wafer inefficacy crystal grain distribution situation that coalignment 22 receives and known failure distribution pattern do not have a kind of coupling, coalignment 22 can send mismatch signals and send the inefficacy crystal grain distribution situation of these box wafers and the inefficacy crystal grain distribution situation of single-wafer to analytical equipment 23 to analytical equipment 23.Analytical equipment 23 can at first be put in order the analysis of box wafer based on the inefficacy crystal grain distribution situation of this box wafer according to mismatch signal.
Step 6, the whole box wafer that occurs judging is kept somewhere type if the inefficacy crystal grain of whole box wafer under test event distributes, and then will put in order the box wafer and keep somewhere.With reference to shown in Figure 3, whole box wafer analytical procedure is as follows,
And correspondingly, analytical equipment 23 can be judged for the situation whether the inefficacy crystal grain distribution of putting in order the box wafer regional dense distribution occurs according to the inefficacy crystal grain distribution situation of the whole box wafer that obtains, foregoing, whether analytical equipment 23 is according to going out to represent the figure notation of test event to judge the situation that regional dense distribution whether occurs in a zone of wafer in a large number.
And correspondingly, if analytical equipment 23 according to the inefficacy crystal grain distribution situation discovery of the whole box wafer that obtains, when having occurred in a large number representing the figure notation of test event, will send the analysis result that this box wafer is kept somewhere in a zone of wafer.
And correspondingly, when if analytical equipment 23 is not found to have occurred in a large number representing the figure notation of test event according to the inefficacy crystal grain distribution situation of the whole box wafer that obtains, will judge the equidistantly situation of distribution whether occurs according on wafer, whether quantity figure notation much at one occurring every a determining deviation in a zone of wafer.
And correspondingly, if analytical equipment 23 is found according to the inefficacy crystal grain distribution situation of the whole box wafer that obtains, the figure notation that will occur quantity representative test event much at one on wafer every a determining deviation will be sent the analysis result that this box wafer is kept somewhere.
And correspondingly, if analytical equipment 23 not have discovery quantity figure notation much at one will occur every a determining deviation on wafer according to the inefficacy crystal grain distribution situation of the whole box wafer that obtains, will be according on the line direction of wafer or whether go out to represent the figure notation of test event to judge whether to have occurred the situation of continuous distribution on the line direction of wafer or column direction on the column direction continuously.
And correspondingly,, will send analysis result on the line direction of wafer or column direction with this box wafer indwelling if when analytical equipment 23 is found to have occurred continuously represent the figure notation of test event according to the inefficacy crystal grain distribution situation of the whole box wafer that obtains.
And correspondingly, when if analytical equipment 23 not have discovery to occur continuously representing the figure notation of test event on the line direction of wafer or column direction according to the inefficacy crystal grain distribution situation of the whole box wafer that obtains, will send the signal that whole box wafer indwelling type does not appear in whole box wafer, and stop to put in order the analysis of box wafer.
Step 7 if the whole box wafer that judging does not appear in the inefficacy crystal grain distribution of whole box wafer under test event is kept somewhere type, is then judged the single-wafer indwelling type that the inefficacy crystal grain of single-wafer under test event distributes and whether occurs judging.
And correspondingly, analytical equipment 23 will carry out single-wafer based on the inefficacy crystal grain distribution situation of the single-wafer that receives and analyze after stopping to put in order the analysis of box wafer.
Step 8, the single-wafer that occurs judging is kept somewhere type if the inefficacy crystal grain of single-wafer under test event distributes, and then will put in order the box wafer and keep somewhere.With reference to shown in Figure 4, the single-wafer analytical procedure is as follows,
And correspondingly, analytical equipment 23 is judged the figure notation situation pockety that whether has occurred representing test event on single-wafer according to the inefficacy crystal grain distribution situation of the single-wafer that receives.
Step 42 if the situation of uneven distribution has appearred in the inefficacy crystal grain of this wafer, can be kept somewhere further to detect putting in order the box wafer.If described situation, then explanation may board or processing procedure unsettled situation has appearred, just be necessary further to detect to confirm its quality for whole box wafer.
And correspondingly,, will send the analysis result that whole box wafer is kept somewhere if analytical equipment 23 finds that according to the inefficacy crystal grain distribution situation of the single-wafer that receives situation pockety appears in the figure notation of the representative test event on wafer.
Step 43, if the situation of uneven distribution does not appear in the inefficacy crystal grain of this wafer, whether inefficacy crystal grain that continue to judge this wafer so the situation of continuous distribution (continuous fail) on the line direction of wafer or column direction occurred.The situation of continuous distribution is for example shown in Figure 9 on line direction or the column direction, described at wafer line direction or column direction on the situation of continuous distribution be meant under test event, the inefficacy crystal grain of this wafer continuous distribution on the line direction of wafer, perhaps continuous distribution on the column direction of wafer.Causing the reason of the distribution situation of this inefficacy crystal grain is the same with the similar distribution situation of whole box wafer in fact, also is because mistake appears in the pollution or the tester table of lithography mask version.
And correspondingly, if analytical equipment 23 not have the figure notation of the representative test event of discovery on wafer situation pockety to occur according to the inefficacy crystal grain distribution situation of the single-wafer that receives, will be according on the line direction of wafer or column direction, whether having occurred representing the figure notation of test event to judge the continuous distribution situation that whether has occurred on line direction or the column direction continuously.
Step 44 if the situation of continuous distribution on the line direction of wafer or column direction has appearred in the inefficacy crystal grain of this wafer, can be put in order the box wafer and keep somewhere further to detect.If described situation, then explanation may lithography mask version be subjected to polluting or the time tester table mistake has appearred, just be necessary this box wafer is further detected to confirm its quality.
And correspondingly,, will send the analysis result of whole box wafer indwelling if analytical equipment 23 finds to have occurred continuously represent the figure notation of test event according to the inefficacy crystal grain distribution situation of the single-wafer that receives on the line direction of wafer or column direction.
Step 45 if the inefficacy crystal grain of this wafer does not appear at the situation of continuous distribution on the line direction of wafer or the column direction, continues then to judge whether the inefficacy crystal grain of this wafer the situation of regional dense distribution (cluster single fail) occurs.The situation of zone dense distribution is for example shown in Figure 10, and described regional dense distribution is meant that under test event the inefficacy crystal grain of this wafer almost all is distributed in the same zone of wafer, and the crystal grain that almost do not lose efficacy in other places.The possible cause that causes the distribution situation of this inefficacy crystal grain also is the instability of board or processing procedure.
And correspondingly, if analytical equipment 23 not have discovery to occur representing the figure notation of test event continuously on the line direction of wafer or column direction according to the inefficacy crystal grain distribution situation of the single-wafer that receives, will represent the figure notation of test event to judge regional dense distribution situation whether occurred according in a zone of wafer, whether having occurred in a large number.
Step 46 if the situation of regional dense distribution has appearred in the inefficacy crystal grain of this wafer, can be kept somewhere further to detect putting in order the box wafer.If described situation, then explanation may board or processing procedure instability has appearred, just be necessary further to detect to confirm its quality for this box wafer.
And correspondingly,, will send the analysis result that whole box wafer is kept somewhere if the inefficacy crystal grain distribution situation of the single-wafer that analytical equipment 23 bases receive finds to have occurred in a large number representing the figure notation of test event in a zone of wafer.
Step 47 if the situation of regional dense distribution does not appear in the inefficacy crystal grain of this wafer, continues so to judge whether the inefficacy crystal grain of this wafer the situation of periodic points distribution (reticle) occurred.The reason that causes this inefficacy crystal grain to distribute may be as described below, the situation that periodic points distributes is for example shown in Figure 11, when wafer is carried out photoetching, if there is pollutant on the lithography mask version, these pollutants will block light, make also to stay image as the pollutant size on the wafer.And, photoetching process now mostly adopts step-type mask aligner, therefore after the photoetching of finishing the full wafer wafer, the respective regions of corresponding lithography mask version can occur because the defective that above-mentioned pollutant causes on the wafer, and such defect distribution just is called periodic points and distributes.
And correspondingly, if analytical equipment 23 does not have discovery to occur representing the figure notation of test event in a large number in a zone of wafer according to the inefficacy crystal grain distribution situation of the single-wafer that receives, will judge periodic points distribution ground situation whether occurred according to the figure notation that on wafer, whether periodically goes out to represent test event.
Step 48 if the situation that periodic points is divided has appearred in the inefficacy crystal grain of this wafer, can be kept somewhere further to detect putting in order the box wafer.If described situation, then explanation may lithography mask version be subjected to pollution, just is necessary further to detect to confirm its quality for this box wafer.
And correspondingly,, will send the analysis result that whole box wafer is kept somewhere if the inefficacy crystal grain distribution situation of the single-wafer that analytical equipment 23 bases receive finds periodically to have occurred representing the figure notation of test event on wafer.
And if the inefficacy crystal grain distribution situation of the single-wafer that analytical equipment 23 bases receive does not have to find periodically to have occurred representing the figure notation of test event on wafer, will send the qualified analysis result of this box wafer quality.
In sum, wafer quality analysis method of the present invention is to be distributed by the inefficacy crystal grain of wafer to be analyzed and known inefficacy distribution pattern and the whole box wafer indwelling type of judgement and the inefficacy distribution pattern that single-wafer indwelling type is compared and judged wafer to be analyzed, and carry out quality analysis according to the inefficacy distribution pattern, therefore more objective, avoided the situation of the unstable result of quality analysis.And wafer quality analysis method of the present invention is respectively by the inefficacy distribution situation of whole box wafer in location and single-wafer, makes inefficacy distribution pattern more remarkable of wafer, and the process of judgement is also quicker, so the quality analysis time of wafer is also shorter.
Claims (8)
1. a wafer quality analysis method is characterized in that, comprise,
Whether the yield of judging whole box wafer is lower than set point and the result under test event whether in setting range;
If the yield of whole box wafer is lower than set point or the result under test event not in setting range, then will puts in order the box wafer and keep somewhere;
If the yield of whole box wafer is greater than or equal to set point and the result under test event in setting range, then judge whether the inefficacy distribution pattern that belongs to known according to the whole inefficacy crystal grain distribution situation of box wafer under test event;
If the whole inefficacy crystal grain distribution situation of box wafer under test event belongs to known inefficacy distribution pattern, then judge that according to known inefficacy distribution pattern whole box wafer quality is qualified or quality is undetermined;
If the whole inefficacy crystal grain distribution situation of box wafer under test event do not belong to known inefficacy distribution pattern, then judge the whole box wafer indwelling type that the inefficacy crystal grain of whole box wafer under test event distributes and whether occurs judging;
The whole box wafer that occurs judging is kept somewhere type if the inefficacy crystal grain of whole box wafer under test event distributes, and then will put in order the box wafer and keep somewhere;
If the whole box wafer that judging does not appear in the inefficacy crystal grain distribution of whole box wafer under test event is kept somewhere type, then judge the single-wafer indwelling type that the inefficacy crystal grain of single-wafer under test event distributes and whether occurs judging successively;
The single-wafer that occurs judging is kept somewhere type if the inefficacy crystal grain of single-wafer under test event distributes, and then will put in order the box wafer and keep somewhere;
The single-wafer that does not occur judging is kept somewhere type if the inefficacy crystal grain of single-wafer under test event distributes, and then whole box wafer quality is qualified.
2. wafer quality analysis method as claimed in claim 1 is characterized in that, the described inefficacy distribution pattern distribution situation type of crystal grain on wafer of representing to lose efficacy.
3. wafer quality analysis method as claimed in claim 2 is characterized in that, described inefficacy distribution pattern comprises at least two kinds of inefficacy distribution pattern and the whole box wafer quality inefficacy distribution patterns undetermined of representative that the whole box wafer quality of representative is qualified.
4. wafer quality analysis method as claimed in claim 3 is characterized in that, when the whole inefficacy distribution situation of box wafer under test event comprised the qualified inefficacy distribution pattern of the whole box wafer quality of two or more representatives, described whole box wafer can be kept somewhere.
5. as each described wafer quality analysis method of claim 1 to 4, it is characterized in that, judge that the whole box wafer indwelling the type whether whole inefficacy crystal grain of box wafer under test event occurs judging further comprises,
Judge whether the whole inefficacy crystal grain of box wafer under test event regional dense distribution occurs;
If regional dense distribution then will be put in order the box wafer and be kept somewhere;
If regional dense distribution do not occur, judge then whether the whole inefficacy crystal grain of box wafer under test event the zone occurs and be equally spaced;
If the zone is equally spaced, then will puts in order the box wafer and keep somewhere;
Be not equally spaced if the zone occurs, judge then whether the whole inefficacy crystal grain of box wafer under test event the continuous distribution of line direction or column direction occurs;
If the continuous distribution of line direction or column direction then will be put in order the box wafer and be kept somewhere;
If the continuous distribution of line direction or column direction do not occur, then judge the single-wafer indwelling type that the inefficacy crystal grain of single-wafer under test event distributes and whether occurs judging successively.
6. as each described wafer quality analysis method of claim 1 to 4, it is characterized in that, judge that the single-wafer indwelling type whether the inefficacy crystal grain of single-wafer under test event occurs judging further comprises,
Judge whether the inefficacy crystal grain of single-wafer under test event uneven distribution occurs;
If uneven distribution then will be put in order the box wafer and be kept somewhere;
If uneven distribution do not occur, judge then whether the inefficacy crystal grain of single-wafer under test event the continuous distribution of line direction or column direction occurs;
If the continuous distribution of line direction or column direction then will be put in order the box wafer and be kept somewhere;
If the continuous distribution of line direction or column direction do not occur, judge then whether the inefficacy crystal grain of single-wafer under test event regional dense distribution occurs;
If regional dense distribution then will be put in order the box wafer and be kept somewhere;
If regional dense distribution do not occur, judge then whether the inefficacy crystal grain of single-wafer under test event periodic points occurs and distribute;
If periodic points distributes, then will put in order the box wafer and keep somewhere;
Do not distribute if periodic points occurs, then whole box wafer quality is qualified.
7. wafer quality analysis method as claimed in claim 5 is characterized in that, judges that the single-wafer indwelling type whether the inefficacy crystal grain of single-wafer under test event occurs judging further comprises,
Judge whether the inefficacy crystal grain of single-wafer under test event uneven distribution occurs;
If uneven distribution then will be put in order the box wafer and be kept somewhere;
If uneven distribution do not occur, judge then whether the inefficacy crystal grain of single-wafer under test event the continuous distribution of line direction or column direction occurs;
If the continuous distribution of line direction or column direction then will be put in order the box wafer and be kept somewhere;
If the continuous distribution of line direction or column direction do not occur, judge then whether the inefficacy crystal grain of single-wafer under test event regional dense distribution occurs;
If regional dense distribution then will be put in order the box wafer and be kept somewhere;
If regional dense distribution do not occur, judge then whether the inefficacy crystal grain of single-wafer under test event periodic points occurs and distribute;
If periodic points distributes, then will put in order the box wafer and keep somewhere;
Do not distribute if periodic points occurs, then whole box wafer quality is qualified.
8. a wafer quality analysis apparatus is characterized in that, comprise,
According to whole box wafer yield and the range of results under test event set, yield and the result under test event in conjunction with the whole box wafer that receives screen whole box wafer, and put in order the inefficacy crystal grain distribution situation of box wafer or will put in order the screening plant that the box wafer is kept somewhere according to the corresponding transmission of The selection result;
The inefficacy crystal grain distribution situation that the receiving screen screening device sends, contrast with the known failure distribution pattern, and according to the corresponding transmission of the results of comparison matched signal corresponding with the known failure distribution pattern or send the coalignment of the mismatch signal and the inefficacy crystal grain distribution situation that receives;
When receiving matched signal, send the analysis result that wafer quality is qualified or quality is undetermined by the inefficacy distribution pattern of matched signal correspondence; When receiving mismatch signal, put in order the analytical equipment that analysis result is sent in box wafer and single-wafer analysis according to the inefficacy crystal grain distribution situation that receives.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101265936A CN101290901A (en) | 2007-04-17 | 2007-06-22 | Wafer quality analysis method and device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710039565 | 2007-04-17 | ||
| CN200710039565.0 | 2007-04-17 | ||
| CNA2007101265936A CN101290901A (en) | 2007-04-17 | 2007-06-22 | Wafer quality analysis method and device |
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| CN101290901A true CN101290901A (en) | 2008-10-22 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102110584B (en) * | 2009-12-24 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | Method for acquiring reference product yield of new product on production line |
| CN107887306A (en) * | 2017-11-14 | 2018-04-06 | 武汉新芯集成电路制造有限公司 | A kind of matching method and system for being bonded wafer |
| CN109389598A (en) * | 2018-10-25 | 2019-02-26 | 上海哥瑞利软件有限公司 | A kind of continuous chip failing quantity statistics algorithm of efficient wafer |
| CN111146106A (en) * | 2019-12-30 | 2020-05-12 | 上海华岭集成电路技术股份有限公司 | Method for rapidly screening failure risk of chip |
| CN112527586A (en) * | 2020-11-03 | 2021-03-19 | 特劢丝软件科技(上海)有限公司 | Silicon wafer production control method, electronic device, and computer-readable storage medium |
| CN112802539A (en) * | 2021-01-26 | 2021-05-14 | 长鑫存储技术有限公司 | Failure analysis method, computer device, and storage medium |
| CN112988792A (en) * | 2021-04-15 | 2021-06-18 | 筏渡(上海)科技有限公司 | Searching method and device for wafer yield problem database |
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2007
- 2007-06-22 CN CNA2007101265936A patent/CN101290901A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102110584B (en) * | 2009-12-24 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | Method for acquiring reference product yield of new product on production line |
| CN107887306A (en) * | 2017-11-14 | 2018-04-06 | 武汉新芯集成电路制造有限公司 | A kind of matching method and system for being bonded wafer |
| CN107887306B (en) * | 2017-11-14 | 2019-05-31 | 武汉新芯集成电路制造有限公司 | A kind of matching method and system of bonded wafer |
| CN109389598A (en) * | 2018-10-25 | 2019-02-26 | 上海哥瑞利软件有限公司 | A kind of continuous chip failing quantity statistics algorithm of efficient wafer |
| CN109389598B (en) * | 2018-10-25 | 2021-09-17 | 上海哥瑞利软件股份有限公司 | Efficient statistical algorithm for number of chips with continuous failure of wafer |
| CN111146106A (en) * | 2019-12-30 | 2020-05-12 | 上海华岭集成电路技术股份有限公司 | Method for rapidly screening failure risk of chip |
| CN112527586A (en) * | 2020-11-03 | 2021-03-19 | 特劢丝软件科技(上海)有限公司 | Silicon wafer production control method, electronic device, and computer-readable storage medium |
| CN112802539A (en) * | 2021-01-26 | 2021-05-14 | 长鑫存储技术有限公司 | Failure analysis method, computer device, and storage medium |
| CN112802539B (en) * | 2021-01-26 | 2022-04-19 | 长鑫存储技术有限公司 | Failure analysis method, computer device, and storage medium |
| CN112988792A (en) * | 2021-04-15 | 2021-06-18 | 筏渡(上海)科技有限公司 | Searching method and device for wafer yield problem database |
| CN112988792B (en) * | 2021-04-15 | 2022-05-31 | 筏渡(上海)科技有限公司 | Searching method and device for wafer yield problem database |
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