CN101290712B - Output current pumping circuit and remote controller using the same - Google Patents
Output current pumping circuit and remote controller using the same Download PDFInfo
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- CN101290712B CN101290712B CN2008100092474A CN200810009247A CN101290712B CN 101290712 B CN101290712 B CN 101290712B CN 2008100092474 A CN2008100092474 A CN 2008100092474A CN 200810009247 A CN200810009247 A CN 200810009247A CN 101290712 B CN101290712 B CN 101290712B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/02—Input arrangements using manually operated switches, e.g. using keyboards or dials
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
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Abstract
The present invention relates to a remote control IC having a circuit for pumping up current of an output port and a remote controller implemented to be capable of operating with one battery of about 1.5V using the IC. In the remote controller, an infrared LED emits light through the remote control IC, so that signals are transmitted to devices to be controlled such as a television set.; In order to perform all functions normally even at low voltage and particularly to secure a sufficient transmission distance by driving the infrared LED, the present invention implements a remote controller comprising a remote control IC having a circuit for pumping up output current of an output port, which needs high output current, even at low voltage, and a battery of about 1.5V for driving the remote controller, wherein the infrared LED is driven by the pumped up output current of the output port of the remote control IC, whereby the remote controller can maintain a sufficient transmission distance with only one battery of about 1.5V.; The output port according to the present invention has an output current pumping circuit for detecting a level of power voltage according to the drop of the power voltage, boosting the power voltage, and supplying a voltage boosted higher than the power voltage to the gate of a MOS transistor to obtain output current of high voltage. The output current pumping circuit comprises a power voltage detection unit for determining a level of the power voltage, a boost circuit unit for boosting the power voltage depending on an effective signal of the power voltage detection unit, and a data conversion unit for receiving the changed (boosted) power voltage and controlling the changed (boosted) power voltage in response to a transmission signal to supply gate voltage of the MOS transistor for outputting final current.
Description
Technical field
The present invention relates to a kind ofly be used for pumping and play the circuit of electric current of output port and remote controllers with this circuit, and specifically, relate to a kind of output current pumping, output port wherein of the present invention detects the level about the supply voltage of the pressure drop of power supply, and boosts and provide this voltage to obtain high-tension output current.
Background technology
Usually, if import one or more buttons by the keypad of matrix structure in the remote controllers, then one by one make the output port of key-press matrix sequentially be changed over to low state, and read each button input by button input port with the structure that is embedded in pullup resistor wherein by the port controlling unit.If read low input, then generate the transmission signals of predetermined format at relevant output and input port, and the output bipolar transistor that drives output n-passage MOSFET (NMOS) transistor 100 in the integrated circuit (IC) be embedded in as shown in Figure 1 or be installed in IC outside as shown in Figure 2 switches on and off infrarede emitting diode (LED) 110 and 210, thereby makes the signal that generates can be transmitted to the controlled device of wanting separated by a distance.At this moment, the ultimate range that signal can be transmitted is called as transmission range, and this transmission range is with proportional at the supply voltage and the electric current of output nmos transistor or output bipolar transistor driving.
Therefore, when being high (being in high-voltage state), supply voltage VDD just can not go wrong.But, if supply voltage is low (being in low-voltage state), then following problem will appear, the performance that is the current driver of output nmos transistor 100 or output bipolar transistor 290 can descend with discerning, like this, just be difficult to obtain high-tension high electric current, thereby also reduced transmission range.
In addition, the existing pullup resistor that is embedded in the button input port unit generally all uses single p-passage MOSFET (PMOS) transistor, wherein this button input end unit is used for reading the button input from key-press matrix 170 and 180, and this transistor has the extension length that is equal to resistance, the PMOS transistor (the 14 MOS transistor) 710 shown in Fig. 3 for example, and switch on and off this pullup resistor by the grid of controlling PMOS transistor 710 in response to control signal pull-up_enb (on draw _ enable).The resistance characteristic of this pullup resistor is to be inversely proportional to supply voltage.Especially, because this resistance is adjusted, being to operate under the condition of about 3V at supply voltage, so this resistance can suddenly increase at 1.5V or littler low supply voltage.Therefore, following problem will appear, promptly because the resistance of existing pullup resistor approaches the resistance of the off resistance device of button in the key-press matrix, therefore, even this input port An was also pronounced low state when this button was disconnected, like this, this IC will think mistakenly that button is switched on.
Summary of the invention
Therefore, envision the present invention and solved above-mentioned output port problem.The remote controllers that one object of the present invention just provides a kind of output current pumping and uses this circuit, wherein the pressure drop according to power supply detects mains voltage level, if and supply voltage is brought down below particular level, then promote this supply voltage and provide it to the grid of the nmos pass transistor 300 that is embedded among this IC or the grid that five metals belongs to oxide semiconductor (MOS) transistor 400, wherein this transistor provides the base current of the output bipolar transistor 490 that is installed in the IC outside, thereby obtains corresponding to the effect of the output current of high power supply voltage more.
Another object of the present invention is exactly in order to solve the problem of pullup resistor of the prior art, it provides a kind of remote controllers, wherein be equal to the polymerization of pull-up resistor, active or N well resistor 830 links to each other with the 15 MOS transistor 810 serially, wherein as shown in Figure 8, this transistor 80 is responsible for switching on and off this pullup resistor, make the reduction that gathers way of when low-voltage resistance, thereby solved the problem that resistance and button off resistance increase the samely in the prior art, and work owing to satisfied under 1.5V or lower low pressure, and the work of carrying out under the condition of supply voltage 3V, so the battery of these remote controllers by about 1.5V carries out work.
According to aspects of the present invention, to achieve these goals, provide a kind of remote controllers, comprised key-press matrix 370, it has a plurality of output ports and a plurality of input port of Long-distance Control IC, and this Long-distance Control IC is combined into the button of matrix structure; Port controlling unit 330 is used for sequentially controlling this output port B1 to Bn, so that find one or more buttons that have been pressed from key-press matrix; Button input port unit 340 has pullup resistor that is embedded in wherein and the input state A1 to An that reads each button by the 3rd impact damper; The transmission signals generation unit is used to generate predetermined transmission signals, and wherein this signal is used to make up the input and output port corresponding to this button that is pressed; Control module 320 is used to detect the level of the first supply voltage VDD and generates output signal node-B in response to this transmission signals; The 4th MOS transistor 300 switches on and off this transistor 300 according to the output signal node-B of control module; Infrared LED 310 is used for sending infrared-ray when driving the 4th MOS transistor; Battery 350 is used to the power supply of IC and infrared LED; And the 3rd capacitor 360, be used to stablize this first supply voltage VDD, if wherein this first supply voltage VDD is lower than particular level, then comes pumping to play this output current, thereby strengthened the emission light of infrared LED by driven the 4th transistor with lifting.
These remote controllers can also comprise bipolar transistor 490, and it links to each other with infrared LED, are used to allow this infrared LED luminous; The 6th MOS transistor 480, it is disconnected by the output voltage of the lifting of the 4th MOS transistor; And the 5th MOS transistor 400, be used for bringing in the reception booster tension also higher than supply voltage VDD by grid, and the electric current that will promote offers the base terminal of bipolar transistor 490, wherein when the electric current of this lifting is applied to base terminal, promote the collected current of this bipolar transistor 490, and the collected current after this lifting is provided for infrared LED.
Further, this button input port can comprise pullup resistor, and this pullup resistor is by the polymerization resistor, any one formation in active pull-up device and the N well resistor, wherein above-mentioned resistor resistance under the situation of low-voltage gathers way very low, first end of this pullup resistor links to each other with the first supply voltage VDD, and second end links to each other with first end of the 15 MOS transistor 810, is used to switch on and off this pullup resistor; And the 15 MOS transistor, its gate terminal is used to receive control signal pull-up_enb (on draw _ enable), and second end links to each other with button input port An, and first end links to each other with this pullup resistor; And resistance gathers way and can be lowered during low-voltage, thereby these remote controllers are worked under low-voltage.
In addition, this control module comprises the supply voltage detecting unit, be used to detect the level of the first supply voltage VDD and generate control signal EN, the booster circuit unit, be used to use this control signal EN and transmission signals to generate booster voltage, and Date Conversion Unit, be used in response to this booster voltage and transmission signals and generate output signal node-B; And if this first supply voltage VDD is higher than specific voltage level, then forbid this control signal EN, and if this first supply voltage VDD be lower than specific voltage level, then enable this control signal EN.
Simultaneously, this booster circuit unit can comprise arithmetic logic unit, is used for control signal and transmission signals are carried out logical operation, and boosting unit, is used for generating in response to the output signal of this arithmetic logic unit booster voltage.This arithmetic logic unit can comprise the 3rd phase inverter 511, be used for this transmission signals is carried out anti-phase, and AND door, be used for to control signal EN and anti-phase after transmission signals carry out the logic product computing.This boosting unit can comprise the 4th phase inverter 521, be used for carrying out anti-phase to the output signal of arithmetic logic unit, the 7th MOS transistor, its gate terminal links to each other with the output terminal of the 4th phase inverter and first end links to each other with second source voltage GND, the 8th MOS transistor, its gate terminal links to each other with the output terminal of the 4th phase inverter and first end links to each other with the node that is used to generate booster voltage, the 9th MOS transistor, its gate terminal links to each other with second end of the 7th MOS transistor and second end of the 8th MOS transistor, first end links to each other with the node that is used to generate booster voltage and second end links to each other with the first supply voltage VDD, first impact damper 525, be used to cushion the output signal of this arithmetic logic unit, and the 5th capacitor 526, its first end links to each other with the output terminal of first impact damper and second end links to each other with the node that is used to generate booster voltage.The 7th MOS transistor can be nmos pass transistor, and the 8th and second MOS transistor can be the PMOS transistor, and the volume end of the 9th MOS transistor can float.The volume end that keeps the 9th MOS transistor is for floating, rather than the first supply voltage VDD is applied to its bulk end, and this is for keeping booster voltage to be higher than the first supply voltage VDD.
Further, this Date Conversion Unit comprises the 5th phase inverter, be used for carrying out anti-phase to transmission signals, the tenth MOS transistor, its gate terminal links to each other with the output terminal of the 5th phase inverter and first end links to each other with second source voltage GND, the 11 MOS transistor, transmission signals is applied to its gate terminal, and its first end links to each other with second source voltage GND, and second end links to each other with the node that is used to generate output signal node-B, the 12 MOS transistor, its first end links to each other with booster voltage, second end links to each other with second end of the tenth MOS transistor, and gate terminal links to each other with the node that is used to generate output signal node-B, and the 13 MOS transistor, and its first end links to each other with booster voltage, second end links to each other with the node that is used to generate output signal node-B, and gate terminal connects second end of the tenth MOS transistor and second end of the 12 MOS transistor publicly.The the tenth and the 11 MOS transistor can be nmos pass transistor, and the 12 and the 13 MOS transistor can be the PMOS transistor.
In addition, the 4th MOS transistor can be nmos pass transistor.
Further, the 5th MOS transistor can be nmos pass transistor, and the 6th MOS transistor can be the PMOS transistor.
Simultaneously, according to a further aspect in the invention, provide a kind of output current pumping, having comprised: control module is used to detect the level of the first supply voltage VDD, and generates output signal node-B in response to transmission signals; And output unit, it links to each other with the first supply voltage VDD, be used to receive output signal node-B and generate output current, wherein this control module detects the level of the first supply voltage VDD, if and the first supply voltage VDD is brought down below particular level, boost this first supply voltage VDD and generate output signal node-B of this control module then.
At this moment, this control module can comprise the supply voltage detecting unit, be used to detect the level of the first supply voltage VDD and generate control signal EN, the booster circuit unit, be used to use this control signal EN and transmission signals to generate booster voltage, and Date Conversion Unit, be used in response to this booster voltage and transmission signals and generate output signal node-B.
Here,, then forbid this control signal EN,, then enable this control signal EN if this first supply voltage VDD is lower than specific voltage level if this first supply voltage VDD is higher than specific voltage level.
In addition, this booster circuit unit can comprise arithmetic logic unit, is used for control signal and transmission signals are carried out logical operation, and boosting unit, is used for generating in response to the output signal of this arithmetic logic unit booster voltage.
Further, wherein this arithmetic logic unit can comprise the 3rd phase inverter 511, be used for this transmission signals is carried out anti-phase, and AND door, be used for to control signal EN and anti-phase after transmission signals carry out the logic product computing.
And, this boosting unit can comprise the 4th phase inverter 521, be used for carrying out anti-phase to the output signal of arithmetic logic unit, the 7th MOS transistor, its gate terminal links to each other with the output terminal of the 4th phase inverter and first end links to each other with second source voltage GND, the 8th MOS transistor, its gate terminal links to each other with the output terminal of the 4th phase inverter and first end links to each other with the node that is used to generate booster voltage, the 9th MOS transistor, its gate terminal links to each other with second end of the 7th MOS transistor and second end of the 8th MOS transistor, first end links to each other with the node that is used to generate booster voltage and second end links to each other with the first supply voltage VDD, first impact damper 525, be used to cushion the output signal of this arithmetic logic unit, and the 5th capacitor 526, its first end links to each other with the output terminal of first impact damper and second end links to each other with the node that is used to generate booster voltage.
In addition, the 7th MOS transistor can be nmos pass transistor, and the 8th and the 9th MOS transistor can be the PMOS transistor, and the volume end of the 9th MOS transistor can float.
In addition, further, this Date Conversion Unit can comprise the 5th phase inverter, be used for carrying out anti-phase to transmission signals, the tenth MOS transistor, its gate terminal links to each other with the output terminal of the 5th phase inverter and first end links to each other with second source voltage GND, the 11 MOS transistor, transmission signals is applied to its gate terminal, and its first end links to each other with second source voltage GND, second end links to each other with the node that is used to generate output signal node-B, the 12 MOS transistor, its first end links to each other with booster voltage, and second end links to each other with second end of the tenth MOS transistor, and gate terminal links to each other with the node that is used to generate output signal node-B, and the 13 MOS transistor, its first end links to each other with booster voltage, and second end links to each other with the node that is used to generate output signal node-B, and gate terminal jointly connects second end of the tenth MOS transistor and second end of the 12 MOS transistor.
At this moment, the tenth and the 11 MOS transistor can be nmos pass transistor, and the 12 and the 13 MOS transistor can be the PMOS transistor.
Further, this output unit can comprise current source, its first end links to each other with the first supply voltage VDD and second end links to each other with the node that is used to generate output current, this current source is adjusted the magnitude of current, and the 4th MOS transistor, output signal node-B is applied to its gate terminal, and its first end links to each other with the node that is used to generate output current, and second end links to each other with second source voltage GND.
At this moment, the 4th MOS transistor can be nmos pass transistor.
As mentioned above, the effective part of remote controllers according to the present invention detects the level of supply voltage with regard to being the pressure drop according to power supply, and when supply voltage is reduced to particular level, boost and this supply voltage is provided, therefore, even under the situation of low supply voltage very, also demonstrate higher output current characteristic.
And, in the present invention, polymerization, active or N well resistor links to each other with MOS transistor serially, as pullup resistor at button input port end, even make with the low pressure of high pressure phase ratio under also can reduce gathering way of pull-up resistor.Therefore, the mistake that beneficial effect produces with regard to the off resistance that is to prevent owing to button, and the battery by about 1.5V just enough makes remote controllers work.
Description of drawings
Fig. 1 is for having the block scheme of the general remote controllers of internal type infrared LED driving transistors in the prior art;
Fig. 2 is for having the block scheme of the general remote controllers of external type infrared LED driving transistors in the prior art;
Fig. 3 is the circuit diagram of general button input port in the prior art
Fig. 4 is the block scheme according to the general remote controllers with internal type infrared LED driving transistors of the embodiment of the invention;
Fig. 5 is the block scheme according to the general remote controllers with external type infrared LED driving transistors of the embodiment of the invention;
Fig. 6 is the circuit diagram according to the booster circuit unit of output current pumping of the present invention;
Fig. 7 is the circuit diagram according to the Date Conversion Unit of output current pumping of the present invention;
Fig. 8 is the circuit diagram according to button output port of the present invention; And
Fig. 9 is according to the comparison diagram between the working waveform figure of prior art and output current pumping of the present invention.
[main Reference numeral]
310,410: infrared LED
330,430: port controlling and transmission signals generation unit
340,440: button input port unit
350,450: battery
The 360,460: the 3rd capacitor, the 4th capacitor
490: bipolar transistor
370,470: key-press matrix (m output and n input)
320,420: control module
321.421: the booster circuit unit
322,422: the supply voltage detecting unit
323,423: Date Conversion Unit
300: the four MOS transistor
400: the five MOS transistor
480: the six MOS transistor
510: arithmetic logic unit
511: the three phase inverters
The 512:AND door
520: boosting unit
521: the four phase inverters
522: the seven MOS transistor
523: the eight MOS transistor
524: the nine MOS transistor
525: the first impact dampers
526: the five capacitors
620: the ten MOS transistor
630: the 11 MOS transistor
640: the 12 MOS transistor
650: the 13 MOS transistor
710,810: the 14 MOS transistor, the 15 MOS transistor
720,820: second impact damper, the 3rd impact damper
830: resistor
Embodiment
Hereinafter come the preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings
Fig. 4 is for showing the figure according to the remote controllers of the embodiment of the invention;
As shown in FIG., remote controllers of the present invention comprise key-press matrix 370, the a plurality of output ports of Long-distance Control IC and the input port button that is combined into matrix structure wherein, port controlling unit 330, be used for control output end mouth B1-Bm sequentially, so that from key-press matrix, find one or more buttons that are pressed, button input port unit 340, it has pullup resistor that is embedded in wherein and the input state A1-An that reads each button by impact damper, transmission signals generation unit 330, be used to generate the scheduled transmission signal, be used to make up input and output port corresponding to the button that is pressed, control module 320, be used for detecting the level of the first supply voltage VDD and generate output signal node-B in response to this transmission signals, the 4th MOS transistor 300, output signal node-B according to control module switches on and off, infrared LED 310, be used for when driving the 4th MOS transistor, sending infrared ray, battery 350, be used to the power supply of IC and infrared LED, and the 3rd capacitor 360, be used to stablize this first supply voltage VDD.
In addition, this control module detects the level of the first supply voltage VDD, and if this first supply voltage VDD be brought down below particular level, this first supply voltage VDD and generate output signal node-B then boosts.
In addition, as shown in Figure 6, comprise arithmetic logic unit 510, be used for control signal EN and transmission signals are carried out logical operation according to the booster circuit unit of remote controllers of the present invention, and boosting unit 520, be used for generating booster voltage in response to the output signal of this arithmetic logic unit.
In addition, shown in Fig. 6 and 7, the Date Conversion Unit of remote controllers comprises the 5th phase inverter 610 according to the present invention, and this is used for carrying out anti-phase to transmission signals; The tenth MOS transistor 620, its gate terminal links to each other with the output terminal of the 5th phase inverter, and first end links to each other with second source voltage GND; The 11 MOS transistor 630, transmission signals are applied to its gate terminal, and its first end links to each other with second source voltage GND, and second end links to each other with the node that is used to generate output signal node-B; The 12 MOS transistor 640, its first end links to each other with booster voltage, and second end links to each other with second end of the tenth MOS transistor 620, and gate terminal links to each other with the node that is used to generate output signal node-B; And the 13 MOS transistor 650, its first end links to each other with boosting, second end links to each other with the node that is used to generate output signal node-B, and gate terminal connects second end of the tenth MOS transistor 620 and second end of the 12 MOS transistor 640 publicly.
This transmission signals is for corresponding to the internal signal of the button that is pressed, it be generate by button input port unit and be transferred to the destination by infrared LED.
Wherein, as shown in Figure 9, if transmission signals is the GND level, then this infrared LED is in ON (connection) state, and if transmission signals is the VDD level, then this infrared LED is in OFF (disconnection) state.Certainly, this is that it has caused the opposite phase of transmission signals because being suitable for the MOS transistor of Date Conversion Unit is nmos pass transistor.
At this moment, the tenth MOS transistor 620 and the 11 MOS transistor 630 are nmos pass transistor, and the 12 MOS transistor 640 and the 13 MOS transistor 650 are the PMOS transistor.
Below the principle of work that an embodiment of the present invention will be described.If first supply voltage is higher than predetermined specific voltage level, then forbid the output signal EN of this supply voltage detecting unit 322, make can the not boost first supply voltage VDD and because it is a booster voltage and export first supply voltage of this booster circuit unit 321.If the first supply voltage VDD is brought down below specific voltage level, then enable this output signal EN from this point, and this booster circuit unit 321 this first supply voltage VDD that can boost.If the transmission signals of output is the high output signal EN that enables simultaneously, then output signal node-B is transferred to lowly, and the 4th MOS transistor 300 is disconnected, thereby this infrared LED 310 also stops luminous.
At this moment, rest on the level of the first supply voltage VDD as the booster voltage of the output of booster circuit unit 321, and on the contrary, if transmission signals is low, then the booster voltage as the output of booster circuit unit 321 has become booster voltage.Then, this booster voltage has been provided for Date Conversion Unit 323, and like this, as shown in Figure 9, this output signal node-B has just arrived the voltage level after boosting.Therefore, the grid voltage of the 4th MOS transistor 300 becomes and is higher than the first supply voltage VDD, thereby has compared with prior art demonstrated the current characteristics after improving, and wherein in the prior art, grid voltage becomes the level of the first supply voltage VDD.Therefore, compared with prior art, sent stronger light by the infrared LED 310 that improves the after-current driving, and farther transmission range is provided.
When the 9th MOS transistor 524 was disconnected, this first supply voltage VDD was applied to negative (-) end of the 5th capacitor 526.Therefore, be added charging voltage generation booster voltage to the capacitor 526 of the first supply voltage VDD, when wherein transmission signals is high this capacitor 526 charged and this first supply voltage VDD is applied to bearing (-) end, then, with this charging voltage output.
In addition, as shown in Figure 8, as the pullup resistor that is embedded in according to the present invention in the button input port unit, wherein this button input port unit reads the button input from key-press matrix 370, be equal to the polymerization of pull-up resistor, active or N well resistor 830 links to each other with the 15 MOS transistor 810 serially, and wherein the 15 MOS transistor 810 is responsible for switching on and off this pullup resistor.Therefore, the resistance when having reduced low-voltage gathers way, and like this, has just solved the problems of the prior art, that is, the increase of resistance has reached the degree of button off resistance.Therefore, satisfied the work under 1.5V or lower low-voltage, and under the condition of supply voltage 3V, worked.
This is because when the voltage that is applied to node B when being high, the resistance that is applied to field effect transistor (FET) reduces, like this, and only just can be at the enough electric currents of FET 300 acquisitions by the voltage of 1.5V.
In another embodiment of the present invention as shown in Figure 5, the transistor that drives this infrared LED is the bipolar transistor 490 that is installed in Long-distance Control IC outside.In this case, according to the mode identical with Fig. 4, these remote controllers comprise key-press matrix 470, the a plurality of output ports of Long-distance Control IC and the input port button that is combined into matrix structure wherein, port controlling unit 430, be used for control output end mouth B1-Bm sequentially, so that from key-press matrix, find one or more buttons that are pressed, button input port unit 440, it has pullup resistor that is embedded in wherein and the input state A1-An that reads each button by impact damper, transmission signals generation unit 430, be used to generate the scheduled transmission signal, be used to make up input port and output port corresponding to the button that is pressed, control module 420, be used to detect the level of the first supply voltage VDD and generate output signal node-B in response to this transmission signals, the 5th MOS transistor 400, its output signal node-B according to control module switches on and off, the 6th MOS transistor 480, itself and the 5th MOS transistor switch on and off on the contrary, bipolar transistor 490, output by receiving the 5th and the 6th MOS transistor is switched on as the input of base terminal and disconnects, infrared LED 410, be used for when driving bipolar transistor, sending infrared ray, battery 450, be used to the power supply of IC and infrared LED, and the 4th capacitor 460, be used to stablize this first supply voltage VDD.According to mode same as shown in Figure 4,, then detect, and output signal EN is transferred to booster circuit unit 421 by supply voltage detecting unit 422 if this first supply voltage VDD is brought down below particular level.If transmission signals is high, then the first supply voltage VDD is exported as booster voltage in the booster circuit unit, and if transmission signals is low, then this booster circuit unit output is higher than voltage after the boosting of the first supply voltage VDD as booster voltage.Then, this Date Conversion Unit 423 receives this booster voltage, if and transmission signals is high, then the low output of this Date Conversion Unit output is as output signal node-B, to disconnect the 5th MOS transistor 400 and to connect the 6th MOS transistor 480, thereby disconnect this bipolar transistor 490, and this infrared LED stops luminous.On the contrary, if transmission signals is low, then this Date Conversion Unit output booster voltage is as output signal node-B, to connect the 5th MOS transistor 400 and to disconnect the 6th MOS transistor 480, thereby connect this bipolar transistor 490, and this infrared LED begins luminous.At this moment, because booster voltage is applied to the grid of the 5th MOS transistor 400, therefore higher base current is provided for bipolar transistor.Therefore, because this infrared LED is by the higher current drives of bipolar transistor, so it has sent stronger light, and can guarantee farther transmission range.
Hereinafter, describe in the booster circuit unit principle and the process of boosting and exporting in charging and the Date Conversion Unit in more detail with reference to Fig. 4-7, wherein these principles and process are to be undertaken by the transistorized work that is included in booster circuit unit and the Date Conversion Unit.
This booster circuit unit 321 or 421 uses control signal EN and transmission signals to generate booster voltage.
At this moment, because the first supply voltage VDD is higher than predetermined specific voltage level, therefore when control signal EN is disabled, the signal that passes AND door 512 just is fixed to low, and has nothing to do with the state of transmission signals.The 4th converter 521 with the output signal of AND door 512 anti-phase be high.At this moment, the 7th MOS transistor 522, it is a nmos pass transistor, is switched on, and the 8th MOS transistor 523, it is the PMOS transistor, is disconnected.In addition, owing to the 7th MOS transistor is switched on, so the 9th MOS transistor 524, it is the PMOS transistor, also is switched on as mentioned above.
In addition, by first impact damper 525 output signal of AND door 512 is applied to negative (-) end of capacitor 526 as second source voltage GND, and the first supply voltage VDD that passes the 9th MOS transistor 524 that is switched on is applied to just (+) end, thereby capacitor is charged.Do not have the first boosted supply voltage to be output as booster voltage, it is the output of booster circuit unit 321 or 421.
If this first supply voltage is brought down below specific voltage level and control signal EN is activated, then start working in this booster circuit unit 321 or 421.
At this moment, if transmission signals is high, for low, and therefore, the signal that passes the AND door is fixed to low the signal that then passes the 3rd converter 511 by anti-phase.At this moment, as mentioned above, because the 9th MOS transistor 524 is switched on, therefore the booster voltage as the output of booster circuit unit 321 or 421 is just identical with first supply voltage.
On the other hand, if transmission signals is low, for high, therefore, the signal that passes the AND door becomes height to the signal that then passes the 3rd converter 511 by anti-phase.
At this moment, opposite with above-mentioned situation, the 7th MOS transistor 522, it is a nmos pass transistor, is disconnected, and the 8th MOS transistor 523, it is the PMOS transistor, is switched on.In addition, owing to the 8th MOS transistor 523 is switched on, so the 9th MOS transistor 524, it is the PMOS transistor, is disconnected.
When the 9th MOS transistor 524 was disconnected, this first supply voltage VDD was applied to negative (-) end of electric capacity 526.Therefore, be added charging voltage generation booster voltage to the capacitor 526 of the first supply voltage VDD, when wherein transmission signals is high this capacitor 526 charged and this first supply voltage VDD is applied to bearing (-) end, then, booster voltage is exported.
Fig. 7 is the circuit diagram according to the Date Conversion Unit of output current pumping of the present invention.Referring to Fig. 4,5 and 7, this Date Conversion Unit 323 or 423 is in response to this booster voltage and transmission signals and generate the first output signal node-B.
If transmission signals is high, then the 11 MOS transistor 630 and the 12 MOS transistor 640 are switched on, and the tenth MOS transistor 620 and the 13 MOS transistor 650 are disconnected.Therefore, this first output signal node-B is outputted as low, and the 4th or the 5th MOS transistor 300 or 400 is disconnected.At this moment, the electric current corresponding to the first supply voltage VDD is output as output current.
On the other hand, if transmission signals is low, then the tenth MOS transistor 620 and the 13 MOS transistor 650 are switched on, and the 11 MOS transistor 630 and the 12 MOS transistor 640 are disconnected.Therefore, booster voltage is output as the first output signal node-B, and the 4th or the 5th MOS transistor 300 or 400 is switched on.Therefore, even when the first supply voltage VDD of low-voltage state, also show current characteristics corresponding to high-tension output current.
Though in the description of carrying out the 4th and the 5th MOS transistor 300 and 400 is limited to nmos pass transistor, this is for convenience of explanation, and also can adopt the PMOS transistor according to identical mode.
Fig. 9 is for when first supply voltage is lower than particular level, according to the comparison diagram between the working waveform figure of prior art and output current pumping of the present invention.
Referring to Fig. 9, be understandable that, when the first supply voltage VDD is lower than specific voltage, when transmission signals by anti-phase when low from height, output signal node-A according to prior art is changed into VDD from GND, and output signal node-B according to the present invention is changed into from GND and boosts to the booster voltage that is higher than the first supply voltage VDD.On the contrary, when the first supply voltage VDD was higher than particular level, output signal node-B of the present invention is also the same with output signal node-A of the prior art to change VDD into from GND.
Though invention has been described with reference to the preferred embodiment shown in the accompanying drawing, these embodiment only are used for illustration purpose.It will be apparent to one skilled in the art that to be understandable that, under the situation that does not break away from spirit of the present invention and category, can carry out various modifications and change.Therefore, technology category of the present invention should be by the technical spirit defined of claims.
For example, the MOS transistor that is suitable for Date Conversion Unit can be the PMOS transistor.In this case, the phase place between the output voltage of transmission signals and Node B does not change, and the generation of button input port unit has the signal of out of phase (that is 180 degree opposite phases).
Claims (7)
1. remote controllers comprise:
Key-press matrix (370), it has a plurality of buttons of matrix structure;
Transmission signals generation unit (330) is used to generate the scheduled transmission signal corresponding to the button that is pressed;
Power voltage detecter is used to detect the level of supply voltage (VDD) and the output control signal corresponding to this mains voltage level;
Booster circuit is used to use control signal and transmission signals to generate booster voltage;
Output unit is used to provide output signal, and irrelevant with the level of supply voltage; And
Date Conversion Unit is used to use transmission signals and booster voltage to generate output signal,
Wherein, this booster circuit keeps the power level of this booster voltage by this supply voltage that boosts,
Wherein, this control signal is the signal that is used for the driving of definite this booster circuit, if this supply voltage is higher than specific voltage level, then forbids this control signal, if this supply voltage is lower than this specific voltage level, then enables this control signal.
2. according to the remote controllers of claim 1, wherein, this booster circuit receives transmission signals and control signal from power voltage detecter and transmission signals generation unit, is driven by control signal, and generates corresponding to the supply voltage after the boosting of this transmission signals.
3. according to the remote controllers of claim 1, wherein, this output unit comprises the supply voltage that field effect transistor and output keep, and wherein controls the on/off of this field effect transistor by output signal (Node-B).
4. output current pumping comprises:
Power voltage detecter is used to detect the level of supply voltage (VDD) and the output control signal corresponding to this mains voltage level;
Booster circuit is used to use control signal and transmission signals to generate booster voltage;
Output unit is used to provide output signal, and irrelevant with the level of supply voltage; And
Date Conversion Unit is used to use transmission signals and this booster voltage to generate output signal,
Wherein, this control signal is the signal that is used for the driving of definite this booster circuit, if this supply voltage is higher than specific voltage level, then forbids this control signal, if this supply voltage is lower than this specific voltage level, then enables this control signal.
5. according to the circuit of claim 4, wherein, this booster circuit keeps the power level of this booster voltage by this supply voltage that boosts.
6. according to the circuit of claim 5, wherein, this booster circuit receives transmission signals and control signal from power voltage detecter and transmission signals generation unit, is driven by control signal, and generates corresponding to the supply voltage after the boosting of this transmission signals.
7. according to any one circuit in the claim 4 to 6, wherein, this output unit comprises the supply voltage that field effect transistor and output keep, and wherein controls the on/off of this field effect transistor by output signal (Node-B).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2007-0038273 | 2007-04-19 | ||
| KR20070038273 | 2007-04-19 | ||
| KR1020070067608A KR100934002B1 (en) | 2007-04-19 | 2007-07-05 | Output Enhancement Circuit and Remote Controller Using the Same |
| KR10-2007-0067608 | 2007-07-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101290712A CN101290712A (en) | 2008-10-22 |
| CN101290712B true CN101290712B (en) | 2011-11-02 |
Family
ID=40034955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100092474A Expired - Fee Related CN101290712B (en) | 2007-04-19 | 2008-01-31 | Output current pumping circuit and remote controller using the same |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100934002B1 (en) |
| CN (1) | CN101290712B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101162698B1 (en) * | 2010-06-16 | 2012-07-05 | 이타칩스 주식회사 | Output augmentation circuit for remote controller |
| EP2637304A1 (en) * | 2012-03-05 | 2013-09-11 | Siemens Aktiengesellschaft | Digital input unit |
| CN107749160A (en) * | 2017-11-27 | 2018-03-02 | 深圳市康冠技术有限公司 | A kind of infrared signal repeat circuit |
| CN112462820B (en) * | 2020-10-29 | 2022-03-22 | 广东禅信通科技有限公司 | Temperature control system and method for graphene heating material and storage medium |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2720472B2 (en) | 1988-08-29 | 1998-03-04 | ソニー株式会社 | Remote controller |
| KR910008293Y1 (en) * | 1988-12-15 | 1991-10-15 | 삼성전자 주식회사 | Transmission efficiency improved circuit of remote controller |
| KR960028658A (en) * | 1994-12-28 | 1996-07-22 | 배순훈 | Battery exhaust warning device of remote controller |
-
2007
- 2007-07-05 KR KR1020070067608A patent/KR100934002B1/en active IP Right Grant
-
2008
- 2008-01-31 CN CN2008100092474A patent/CN101290712B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100934002B1 (en) | 2009-12-28 |
| CN101290712A (en) | 2008-10-22 |
| KR20080094529A (en) | 2008-10-23 |
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