CN101285168A - Preparation method of porous conducting nano copper film material with ultra- hydrophobicity - Google Patents
Preparation method of porous conducting nano copper film material with ultra- hydrophobicity Download PDFInfo
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- CN101285168A CN101285168A CNA2008100560120A CN200810056012A CN101285168A CN 101285168 A CN101285168 A CN 101285168A CN A2008100560120 A CNA2008100560120 A CN A2008100560120A CN 200810056012 A CN200810056012 A CN 200810056012A CN 101285168 A CN101285168 A CN 101285168A
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Abstract
The invention discloses a method for manufacturing a porous conductive nanometer copper film with super-hydrophobic performance, belonging to the surface technical field. Presently, no report about a porous nanometer copper film with super-hydrophobic performance and conductivity performance exists. The adopted technical proposal is to deposit a layer of metal copper film on the surface of a solid by high power, and then to carry out low power sputtering deposition on the metal copper film surface by a low power sputtering method. The researches show that the surface contact angle of the layer of metal copper which is directly and firstly deposited is about 90 degrees, the contact angle is about 155 degrees after the stable low power sputtering deposition, thereby the super-hydrophobic performance is achieved and good conductivity performance is maintained. The nanometer porous film material not only has super-hydrophobic performance, but also has better mechanical performance than other super-hydrophobic film materials, good thermal conductive performance and good electrical conduction performance. The film material is mainly applied in the fields such as surface technologies of microflow devices, biological chips and semiconductor chips, etc.
Description
Technical field
The present invention relates to the porous nano copper film material preparation method that has super-hydrophobicity and have conductive characteristic, this thin-film material is applicable to the solid surface that needs anti-water-wet and needs to conduct electricity under the Working environment of micro liquid measurement, is mainly used in fields such as microfluidic device, biochip, semiconductor chip surface technology.
Background technology
The application of wettability is extremely extensive, microelectronics industry, and Printing industry, paper industry, the synthetic preparation and the medicine of transportation industry and even novel material, there is confidential relation the biochip aspect with wettability invariably.In recent years, the boundary material with special wettability causes people's extensive concern.Recently, researcher is successfully prepared many super-hydrophobic polymers with nanostructure.
Along with the development of microfluidic device, the device of character such as thermal conductivity that ask for something is high and specific conductivity need have ultra-hydrophobicity.Yet organic compound is because its relatively poor heat conductivity and mechanical property can not satisfy the application in a lot of fields.And,, have certain electric conductivity when also needing further to strengthen its ultra-hydrophobicity in order to improve its application in microfluidic device.
In microfluid test sensing equipment and microfluidic device, inner or also need lay some electro-conductive materials on every side at based superhydrophobic thin films, greatly increased the design difficulty and the manufacturing cost of microfluidic device.When at present also not having ultra-hydrophobicity and possess the report of the porous nano copper film of conductivity, with this nanometer copper film as the miniflow tube wall, with reducing the design difficulty and the manufacturing cost of microfluidic device, promote the fast development of microfluidic device, biochip and microelectronics industry.
Summary of the invention
The present invention seeks to, a kind of preparation method of super hydrophobic porous nano copper film material is provided,, have conductivity simultaneously, realize that the nanoporous copper film has super-hydrophobicity and conductivity in microfluidic device to increase the contact angle of its surface and water.
In order to address the above problem, the technical solution adopted in the present invention is to deposit layer of metal copper film with superpower earlier at solid surface, adopts the small power sputtering method that the metallic copper film surface is carried out the small power sputtering sedimentation then.We studies show that, directly sedimentary layer of metal copper surface contact angle is about 90 degree earlier, and behind the stable small power sputtering sedimentation of process, contact angle reaches super-hydrophobicity about 155 ℃, and keeps excellent conducting performance simultaneously.
The present invention has the preparation method of the porous conducting nano copper film material of ultra-hydrophobicity, it is characterized in that, may further comprise the steps:
1. earlier the sediment chamber is vacuumized, vacuum tightness reaches 10
-4More than the Pa, again substrate is heated to 350 ℃-450 ℃ and is used for driveing substrate and near oxygen molecule thereof, be reduced to 100 ℃ again; Charge into argon gas then, air pressure is in the scope of 0.1～0.5Pa;
2. with 300W-400W power deposition layer of metal copper film on as the solid surface of substrate, thickness is 0.5 micron to 1.5 microns scope;
3. the substrate original position is carried out 50W-180W power sputtering sedimentation, base reservoir temperature is in 100 ℃ to 150 ℃ scope, 50～90 minutes sputter process time.
Argon gas can increase isoionic concentration such as charged argon ion and electronics in the plasma body, thereby the speed when effectively bombarding copper target generation copper atom and reducing the copper atom deposition, in the argon gas glow discharging process, gaseous state copper molecule and part copper ion sputter out in the plasma gas on the copper target of associating, at last deposit to the metallic copper film surface, deposit film forming then, thereby formed nanoporous copper film with gap structure at the metallic copper film surface with lower speed.
Compared with the prior art, the invention is characterized in: it is not simple metallic copper thin-film material, but at first prepare layer of metal copper film with the more high-power sputter deposition of routine, then the substrate original position is carried out small power subatmospheric sputtering sedimentation, thereby formed one deck nanometer copper vesicular structure on the surface, produced super-hydrophobicity and have conductivity.
This ultra-hydrophobic conductive film is plated on monocrystalline silicon piece and the sheet glass substrate, has tangible super-hydrophobicity and conductivity, for providing the thin-film material performance basis at microfluidic device and Application of Biochips.
Description of drawings
Fig. 1 is the ultra-hydrophobic conductive porous nano copper film scanning electromicroscopic photograph of example one condition preparation.
Scanning electron microscope unit type JEOL JSM6500.
Embodiment
Below further introduce the present invention with three examples of implementation.
Embodiment one:
1. earlier the sediment chamber is vacuumized, vacuum tightness reaches 10
-4More than the Pa, again substrate is heated to 350 ℃ and is used for driveing substrate and near oxygen molecule thereof, and then be reduced to 100 ℃.Charge into argon gas then, air pressure remains on 0.1Pa;
2. deposit layer of metal copper film with power 300W deposition method on as the solid surface of substrate earlier, thickness is 0.5 micron;
3. the substrate original position is carried out small power 50W sputtering sedimentation, base reservoir temperature is 100 ℃, and the sputter process time is 50 minutes.
The film surface of this example preparation is carried out wettability and conductivity is measured, with the quiet contact angle of water be 155.82 °, specific conductivity is 2.4 * 10
3S/cm
-1
Embodiment two:
1. earlier the sediment chamber is vacuumized, vacuum tightness reaches 10
-4More than the Pa, again substrate is heated to 400 ℃ and is used for driveing substrate and near oxygen molecule thereof, and then be reduced to 100 ℃.Charge into argon gas then, air pressure remains on 0.3Pa;
2. deposit layer of metal copper film with more high-power 350W deposition method on as the solid surface of substrate earlier, thickness is 1.0 microns;
3. the substrate original position is carried out small power 100W sputtering sedimentation, base reservoir temperature remains on 120 ℃, 70 minutes sputter process time.
The film surface of this example preparation is carried out wettability and conductivity is measured, with the quiet contact angle of water be 157.50 °, specific conductivity is 5.7 * 10
3S/cm
-1
Embodiment three:
1. earlier the sediment chamber is vacuumized, vacuum tightness reaches 10
-4More than the Pa, again substrate is heated to 450 ℃ and is used for driveing substrate and near oxygen molecule thereof, and then be reduced to 100 ℃.Charge into argon gas then, air pressure remains on 0.5Pa;
2. deposit layer of metal copper film with power 400W deposition method on as the solid surface of substrate earlier, thickness is 1.5 microns;
3. the substrate original position is carried out power 80W sputtering sedimentation, base reservoir temperature remains on 150 ℃, 90 minutes sputter process time.
The film surface of this example preparation is carried out wettability and conductivity is measured, with the quiet contact angle of water be 153.43 °, specific conductivity is 4.6 * 10
3S/cm
-1
Claims (1)
1, have the preparation method of the porous conducting nano copper film material of ultra-hydrophobicity, it is characterized in that, may further comprise the steps:
1) earlier the sediment chamber is vacuumized, vacuum tightness reaches 10
-4More than the Pa, again substrate is heated to 350 ℃-450 ℃ and is used for driveing substrate and near oxygen molecule thereof, be reduced to 100 ℃ again; Charge into argon gas then, air pressure is in the scope of 0.1～0.5Pa;
2) with 300W-400W power deposition layer of metal copper film on as the solid surface of substrate, thickness is 0.5 micron to 1.5 microns scope;
3) the substrate original position is carried out 50W-180W power sputtering sedimentation, base reservoir temperature is in 100 ℃ to 150 ℃ scope, 50～90 minutes sputter process time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN200810056012A CN100577857C (en) | 2008-01-11 | 2008-01-11 | Preparation method of porous conducting nano copper film material with ultra- hydrophobicity |
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| CN200810056012A CN100577857C (en) | 2008-01-11 | 2008-01-11 | Preparation method of porous conducting nano copper film material with ultra- hydrophobicity |
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| CN101285168A true CN101285168A (en) | 2008-10-15 |
| CN100577857C CN100577857C (en) | 2010-01-06 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101891142A (en) * | 2010-07-12 | 2010-11-24 | 浙江工业大学 | Method for preparing active, flow impact resistant and non-lotus-like super-hydrophobic surface |
| CN102011153A (en) * | 2010-12-24 | 2011-04-13 | 上海交通大学 | Preparation method of metal-base superhydrophobic material |
| CN102147366A (en) * | 2010-12-29 | 2011-08-10 | 复旦大学 | Super-hydrophobic biochip and optical testing method therefor |
| CN103014626A (en) * | 2012-12-17 | 2013-04-03 | 常州大学 | Preparation method of NPC (nano porous copper) thin films |
| CN106367726A (en) * | 2016-11-23 | 2017-02-01 | 南京航空航天大学 | Intrinsic super-hydrophobic ceramic coating and preparing method thereof |
| CN106848671A (en) * | 2017-01-12 | 2017-06-13 | 启东乾朔电子有限公司 | Electric connector |
| CN111926299A (en) * | 2020-08-05 | 2020-11-13 | 北京信息科技大学 | Multi-level Cu film with surface interface regulation and control function and preparation method thereof |
-
2008
- 2008-01-11 CN CN200810056012A patent/CN100577857C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101891142A (en) * | 2010-07-12 | 2010-11-24 | 浙江工业大学 | Method for preparing active, flow impact resistant and non-lotus-like super-hydrophobic surface |
| CN101891142B (en) * | 2010-07-12 | 2012-07-04 | 浙江工业大学 | Method for preparing active, flow impact resistant and non-lotus-like super-hydrophobic surface |
| CN102011153A (en) * | 2010-12-24 | 2011-04-13 | 上海交通大学 | Preparation method of metal-base superhydrophobic material |
| CN102147366A (en) * | 2010-12-29 | 2011-08-10 | 复旦大学 | Super-hydrophobic biochip and optical testing method therefor |
| CN103014626A (en) * | 2012-12-17 | 2013-04-03 | 常州大学 | Preparation method of NPC (nano porous copper) thin films |
| CN103014626B (en) * | 2012-12-17 | 2014-12-03 | 常州大学 | Preparation method of NPC (nano porous copper) thin films |
| CN106367726A (en) * | 2016-11-23 | 2017-02-01 | 南京航空航天大学 | Intrinsic super-hydrophobic ceramic coating and preparing method thereof |
| CN106367726B (en) * | 2016-11-23 | 2018-01-16 | 南京航空航天大学 | A kind of intrinsic super-hydrophobic ceramic coating and preparation method thereof |
| CN106848671A (en) * | 2017-01-12 | 2017-06-13 | 启东乾朔电子有限公司 | Electric connector |
| CN111926299A (en) * | 2020-08-05 | 2020-11-13 | 北京信息科技大学 | Multi-level Cu film with surface interface regulation and control function and preparation method thereof |
| CN111926299B (en) * | 2020-08-05 | 2022-07-26 | 北京信息科技大学 | Multi-level Cu film with surface interface regulation and control function and preparation method thereof |
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|---|---|
| CN100577857C (en) | 2010-01-06 |
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