CN101281883B - Method for forming threading hole on substrate - Google Patents
Method for forming threading hole on substrate Download PDFInfo
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- CN101281883B CN101281883B CN2008100998506A CN200810099850A CN101281883B CN 101281883 B CN101281883 B CN 101281883B CN 2008100998506 A CN2008100998506 A CN 2008100998506A CN 200810099850 A CN200810099850 A CN 200810099850A CN 101281883 B CN101281883 B CN 101281883B
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Abstract
The invention relates to a method for forming a through hole on a base material, which includes steps: (a) providing a base material having a first surface and a second surface; (b) forming a open groove on the base material; (c) filling a conductive metal into the open groove; (d) removing part of the base material deposed at periphery of the conductive metal and retaining the conductive metal to form a containing space between the conductive metal and the base material; (e) forming a insulated material in the containing space; (f) removing part of the second surface of the base material to expose the conductive metal and the insulated material. So that, thicker insulated material is formed in the groove and has no thickness asymmetric problem.
Description
Technical field
The invention relates to a kind of method that forms perforating holes on base material, in detail, is the method for utilizing the sidewall formation insulating barrier of polymer perforating holes on base material about a kind of.
Background technology
Referring to figs. 1 to Fig. 3, show the known schematic diagram that on base material, forms the method for perforating holes.At first, with reference to figure 1, provide a base material 1, this base material 1 has a first surface 11 and a second surface 12.Then, on the first surface 11 of this base material 1, form several grooves 13.Then, (Chemical Vapor Deposition CVD) forms an insulating barrier 14 in the sidewall of described groove 13, and forms several accommodation spaces 15 to utilize chemical vapour deposition technique.The material of this insulating barrier 14 is generally silicon dioxide.
Then, with reference to figure 2, insert a conducting metal 16 in described accommodation space 15.The material of this conducting metal is generally copper.At last, the first surface 11 and the second surface 12 of grinding or this base material 1 of etching are to appear this conducting metal 16, as shown in Figure 3.
In this known method, because this insulating barrier 14 is to utilize chemical vapour deposition technique to form, so this insulating barrier 14 has the restriction of the sky earlier at the thickness of the sidewall of described groove 13, usually less than 0.5 μ m.In addition, this insulating barrier 14 has uneven problem at the thickness of the sidewall of described groove 13, that is the thickness that is positioned at the insulating barrier 14 on the described groove 13 top sidewalls can't be in full accord with the thickness that is positioned at the insulating barrier 14 on described groove 13 lower sidewalls.Thereby cause the inconsistent situation of electric capacity.
Therefore, be necessary to provide the method that on base material, forms perforating holes of a kind of innovation and tool progressive, to address the above problem.
Summary of the invention
Main purpose of the present invention is to provide a kind of method that forms perforating holes on base material, and may further comprise the steps: a base material (a) is provided, and this base material has a first surface and a second surface; (b) forming one slots in this substrate; (c) insert a conducting metal in this fluting; (d) remove the part base material that is positioned at this conducting metal periphery, and keep this conducting metal, make to form an accommodation space between this conducting metal and this base material; (e) form an insulating material in this accommodation space; And the second surface of this base material of (f) removal part, to appear this conducting metal and this insulating material.
In the present invention, can in this accommodation space, form thicker insulating material.Moreover this insulating material does not have problem in uneven thickness in this accommodation space.In addition, the present invention can utilize polymer as insulating material, thereby can select different polymerizable material for use at specific processing procedure.
Description of drawings
Fig. 1 to Fig. 3 shows the known schematic diagram that forms the method for perforating holes on base material;
Fig. 4 to Figure 19 shows that the present invention forms the schematic diagram of first embodiment of the method for perforating holes on base material; And
Figure 20 to Figure 27 shows that the present invention forms the schematic diagram of second embodiment of the method for perforating holes on base material.
Embodiment
To Figure 19, show that the present invention forms the schematic diagram of first embodiment of the method for perforating holes with reference to figure 4 on base material.With reference to figure 4 and Fig. 5, wherein Fig. 4 is the vertical view of base material, and Fig. 5 is along the profile of line 5-5 among Fig. 4.At first, provide a base material 2, this base material 2 has a first surface 21 and a second surface 22.This base material 2 is a silicon substrate or a wafer for example.Then, form the first surface 21 of one first photoresist layer 23, and on this photoresist layer 23, form one first opening 231 in this base material 2.In the present embodiment, this first opening 231 is a circle with what overlook sight.Be understandable that this first opening 231 also can be square with what overlook sight.
Then, with reference to figure 6, on this base material 2, form a fluting 24 with etching or alternate manner according to this first opening 231, and this fluting 24 does not run through this base material 2.Afterwards, remove this first photoresist layer 23.Then, with reference to figure 7, insert a conducting metal 25 in this fluting 24.In the present embodiment, the material of this conducting metal 25 is a copper, and it is to utilize plating mode to fill in this fluting 24, and this conducting metal 25 is to fill up this fluting 24.Yet be understandable that this conducting metal 25 also can not fill up this fluting 24, and forms a central channel 26, that is this conducting metal 25 only is formed on the sidewall of this fluting 24, as shown in Figure 8.
Then, with reference to figure 9, remove the conducting metal 25 that is positioned at outside this fluting 24 in the mode of etching or grinding, with the first surface 21 that manifests this base material 2.Then, with reference to figures 10 to Figure 12, remove the part base material 2 that is positioned at these conducting metal 25 peripheries, and keep this conducting metal 25, make to form an accommodation space 28 between this conducting metal 25 and this base material 2.In the present embodiment, be to form this accommodation space 28 in the following manner.With reference to Figure 10 and Figure 11, wherein Figure 10 is the vertical view of base material 2, Figure 11 be among Figure 10 along the profile of line 11-11, at first, form one second photoresist layer 27 on the first surface 21 of this base material 2.Then, form one second opening 271 on this second photoresist layer 27, the position of this second opening 271 is the positions with respect to this fluting 24.This second opening 271 is greater than this first opening 231, to manifest this conducting metal 25.In the present embodiment, this second opening 271 is circular, and it has a central shaft, and this fluting 24 is circular, and it has a central shaft, and the central shaft of the central shaft of this second opening 271 and this fluting 24 is to be positioned on the same axle.Yet be understandable that the central shaft of the central shaft of this second opening 271 and this fluting 24 also can not be positioned on the same axle, as long as but manifest this conducting metal 25.Then, with reference to Figure 12, utilize etching or alternate manner to remove and be positioned at the part base material 2 of these conducting metal 25 peripheries, and keep this conducting metal 25, make to form an accommodation space 28 between this conducting metal 25 and this base material 2, this accommodation space 28 is around this conducting metal 25.Afterwards, remove this second photoresist layer 27.
Then, with reference to figures 13 to Figure 18, form an insulating material in this accommodation space 28.In the present embodiment, the material of this insulating material is a polymer (Polymer) 29.Yet the material of this insulating material also can be a silicon dioxide or other has the material of insulating property (properties).In the present invention, this polymer 29 is formed at mode in this accommodation space 28 including but not limited to following three kinds.First kind of mode is that uniform this polymer 29 of elder generation is on the first surface 21 of this base material and in the relative position of this accommodation space 28, as shown in figure 13.Then, in the vacuum suction mode this polymer 29 is sucked in this accommodation space 28, as shown in figure 14.At last, remove this polymer 29 that is positioned at outside this accommodation space 28 again, as shown in figure 18.
The second way is to form several steam vents 30 earlier, to be communicated with the second surface 22 of this accommodation space 28 to this base material 2, shown in the vertical view of Figure 15.Then, uniform this polymer 29 is on the first surface 21 of this base material and in the relative position of this accommodation space 28.Then, insert this polymer 29 to this accommodation space 28 and described steam vent 27, as shown in figure 16.At last, remove this polymer 29 that is positioned at outside this accommodation space 28 and the described steam vent 30 again.
The third mode is with spraying method (Spray coat) these polymer 29 atomizings and Shen to be amassed in this accommodation space 28, as shown in figure 17 earlier.At last, remove this polymer 29 that is positioned at outside this accommodation space 28 again, as shown in figure 18.
Be noted that if preceding step in this conducting metal 25 do not fill up this fluting 24, and form a central channel 26, as shown in Figure 8.Then in above-mentioned three kinds of modes, this polymer 29 all fills up this accommodation space 28 and this central channel 26.
At last, with reference to Figure 19, remove the partly second surface 22 of this base material 2 with etching or lapping mode, to appear this conducting metal 25 and this insulating material (this polymer 29).Preferably, also can utilize etching or lapping mode to remove the first surface 21 of this base material 2 of part simultaneously.
Referring to figures 20 through Figure 27, show that the present invention forms the schematic diagram of second embodiment of the method for perforating holes on base material.With reference to Figure 20 and Figure 21, wherein Figure 20 is the vertical view of base material, and Figure 21 is along the profile of line 21-21 among Figure 20.At first, provide a base material 4, this base material 4 has a first surface 41 and a second surface 42.This base material 4 is a silicon substrate or a wafer for example.Then, form the first surface 41 of one first photoresist layer 43, and on this photoresist layer 43, form one first opening 431 in this base material 4.
Then, with reference to Figure 22, on this base material 4, form a fluting 44 with etching or alternate manner according to this first opening 431, and this fluting 44 does not run through this base material 4.Afterwards, remove this first photoresist layer 43.Then, with reference to Figure 23, insert a conducting metal 45 in this fluting 44.In the present embodiment, the material of this conducting metal 45 is a copper, and it is to utilize plating mode to fill in this fluting 44, and this conducting metal 45 is to fill up this fluting 44.Yet be understandable that this conducting metal 45 also can not fill up this fluting 44.
Then, with reference to Figure 24 to Figure 25, remove the part base material 4 that is positioned at these conducting metal 45 peripheries, and keep this conducting metal 45, make to form an accommodation space 48 between this conducting metal 45 and this base material 4.In the present embodiment, be to form this accommodation space 48 in the following manner.At first, with reference to Figure 24, form one second photoresist layer 47 on the second surface 41 of this base material 4.Then, form one second opening 471 on this second photoresist layer 47, the position of this second opening 471 is the positions with respect to this fluting 44.This second opening 471 is greater than this first opening 431 (Figure 21).In the present embodiment, this second opening 471 is circular, and it has a central shaft, and this fluting 44 is circular, and it has a central shaft, and the central shaft of the central shaft of this second opening 471 and this fluting 44 is to be positioned on the same axle.Yet be understandable that the central shaft of the central shaft of this second opening 471 and this fluting 44 also can not be positioned on the same axle.Then, with reference to Figure 25, utilize etching or alternate manner to remove and be positioned at the part base material 4 of these conducting metal 45 peripheries, and keep this conducting metal 45, make to form an accommodation space 48 between this conducting metal 45 and this base material 4, this accommodation space 48 is around this conducting metal 45.Afterwards, remove this second photoresist layer 47.
Then, with reference to Figure 26, form an insulating material in this accommodation space 48.In the present embodiment, the material of this insulating material is a polymer (Polymer) 49.Yet the material of this insulating material also can be a silicon dioxide or other has the material of insulating property (properties).In the present invention, this polymer 49 is formed at mode in this accommodation space 48 including but not limited to three kinds of modes of above-mentioned first embodiment.
At last, with reference to Figure 27, remove the partly second surface 42 of this base material 4 with etching or lapping mode, to appear this conducting metal 45 and this insulating material (this polymer 49).Preferably, also can utilize etching or lapping mode to remove the first surface 41 of this base material 4 of part simultaneously.
In the present invention, can in this accommodation space 28,48, form thicker insulating material (for example polymer 29,49).Moreover this insulating material (for example polymer 29,49) does not have problem in uneven thickness in this accommodation space 28,48.In addition, the present invention can utilize this polymer 29,49 as insulating material, thereby can select different polymerizable material for use at specific processing procedure.
Only the foregoing description only is explanation principle of the present invention and effect thereof, but not in order to restriction the present invention.Therefore, practise the foregoing description being made amendment and changing and still do not take off spirit of the present invention in the personage of this technology.Interest field of the present invention should be as described claim listed.
Claims (16)
1. method that forms perforating holes on silicon substrate comprises:
(a) provide a silicon substrate, this silicon substrate has first surface and second surface;
(b) forming one slots in the first surface of this substrate;
(c) insert a conducting metal in this fluting;
(d) remove the part silicon substrate that is positioned at this conducting metal periphery, and keep this conducting metal, make to form an accommodation space between this conducting metal and this silicon substrate;
(e) form an insulating material in this accommodation space; And
(f) remove the partly second surface of this silicon substrate, to appear this conducting metal and this insulating material.
2. method as claimed in claim 1, wherein in this step (a), this silicon substrate is a wafer.
3. method as claimed in claim 1, wherein this step (b) comprises
(b1) form one first photoresist layer in the first surface of this silicon substrate;
(b2) on this first photoresist layer, form first opening; And
(b3) first be opened on this silicon substrate and form this fluting according to this.
4. method as claimed in claim 3, wherein this step (b3) comprises more that afterwards one removes the step of this first photoresist layer.
5. method as claimed in claim 1, wherein in this step (b), this fluting does not run through this silicon substrate.
6. method as claimed in claim 1, wherein this conducting metal is to fill up this fluting in this step (c).
7. method as claimed in claim 1, wherein this conducting metal is not fill up this fluting in this step (c), and forms a central channel, and this insulating material is to fill up this accommodation space and this central channel in step (e).
8. method as claimed in claim 1, wherein this step (c) comprises more that afterwards one removes the step that is positioned at the conducting metal outside this fluting.
9. method as claimed in claim 1, wherein this step (d) comprising:
(d1) form second photoresist layer on the first surface of this silicon substrate;
(d2) form second opening on this second photoresist layer, the position of this second opening is to slot greater than this with respect to the position of this fluting and this second opening; And
(d3) remove the part silicon substrate that is positioned at this conducting metal periphery, and keep this conducting metal, make to form an accommodation space between this conducting metal and this silicon substrate.
10. method as claimed in claim 1, wherein this step (d) comprising:
(d1) form second photoresist layer on the second surface of this silicon substrate;
(d2) form second opening on this second photoresist layer, the position of this second opening is to slot greater than this with respect to the position of this fluting and this second opening; And
(d3) remove the part silicon substrate that is positioned at this conducting metal periphery, and keep this conducting metal, make to form an accommodation space between this conducting metal and this silicon substrate.
11. method as claimed in claim 1, wherein this insulating material is a polymer in this step (e).
12. as the method for claim 11, wherein this step (e) comprising:
(e1) uniform this polymer is in the relative position of this accommodation space; And
(e2) in the vacuum suction mode this polymer is sucked in this accommodation space.
13. as the method for claim 11, wherein this step (e) comprising:
(e1) form several steam vents, to be communicated with the second surface of this accommodation space to this silicon substrate;
(e2) uniform this polymer is in the relative position of this accommodation space; And
(e3) insert this polymer to this accommodation space and described steam vent.
14. as the method for claim 11, wherein this step (e) is to make the atomizing of this polymer and be deposited in this accommodation space with spraying method.
15. method as claimed in claim 1, wherein this step (f) more comprises with etching or grinds the first surface of removing this silicon substrate of part.
16. method as claimed in claim 1, wherein this step (f) is etching or the second surface that grinds this silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100998506A CN101281883B (en) | 2008-05-26 | 2008-05-26 | Method for forming threading hole on substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100998506A CN101281883B (en) | 2008-05-26 | 2008-05-26 | Method for forming threading hole on substrate |
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| Publication Number | Publication Date |
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| CN101281883A CN101281883A (en) | 2008-10-08 |
| CN101281883B true CN101281883B (en) | 2010-06-23 |
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| CN2008100998506A Active CN101281883B (en) | 2008-05-26 | 2008-05-26 | Method for forming threading hole on substrate |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI387019B (en) | 2007-08-02 | 2013-02-21 | Advanced Semiconductor Eng | Method for forming vias in a substrate |
| US8546255B2 (en) | 2007-08-02 | 2013-10-01 | Advanced Semiconductor Engineering, Inc. | Method for forming vias in a semiconductor substrate and a semiconductor device having the semiconductor substrate |
| TWI365483B (en) | 2007-12-04 | 2012-06-01 | Advanced Semiconductor Eng | Method for forming a via in a substrate |
| US8471156B2 (en) * | 2009-08-28 | 2013-06-25 | Advanced Semiconductor Engineering, Inc. | Method for forming a via in a substrate and substrate with a via |
| TWI406380B (en) | 2009-09-23 | 2013-08-21 | Advanced Semiconductor Eng | Semiconductor element having a via and method for making the same and package having a semiconductor element with a via |
| CN102044521B (en) * | 2009-10-21 | 2012-12-19 | 日月光半导体制造股份有限公司 | Semiconductor component with through guide hole, manufacturing method of semiconductor component and packaging structure of semiconductor component with through guide hole |
| CN110491831B (en) * | 2019-07-26 | 2022-06-14 | 福建省福联集成电路有限公司 | Method for manufacturing through hole and manufactured device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6784069B1 (en) * | 2003-08-29 | 2004-08-31 | Micron Technology, Inc. | Permeable capacitor electrode |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6784069B1 (en) * | 2003-08-29 | 2004-08-31 | Micron Technology, Inc. | Permeable capacitor electrode |
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