CN101281332A - Array substrate for liquid crystal display device and manufacturing method of the same - Google Patents
Array substrate for liquid crystal display device and manufacturing method of the same Download PDFInfo
- Publication number
- CN101281332A CN101281332A CNA2007103073818A CN200710307381A CN101281332A CN 101281332 A CN101281332 A CN 101281332A CN A2007103073818 A CNA2007103073818 A CN A2007103073818A CN 200710307381 A CN200710307381 A CN 200710307381A CN 101281332 A CN101281332 A CN 101281332A
- Authority
- CN
- China
- Prior art keywords
- color filter
- filter pattern
- pixel region
- thin film
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Power Engineering (AREA)
Abstract
According to an embodiment, an array substrate for an LCD device includes a substrate, gate lines on the substrate along a first direction, data lines formed along a second direction and crossing the gate lines to define first, second and third pixel regions, thin film transistors at crossing points of the gate lines and the data lines, red, green and blue color filter patterns sequentially disposed in the first, second and third pixel regions, respectively, first, second and third common lines corresponding to the first, second and third pixel regions and receiving first, second and third common voltages, respectively, a pixel electrode over each of the red, green and blue color filter patterns and connected to one of the thin film transistors, and a common electrode over each of the red, green and blue color filter patterns and connected to one of the first, second and third common lines.
Description
Technical field
The present invention relates to liquid crystal display (LCD) device, more particularly, relate to a kind of array base palte and manufacture method thereof that is used for liquid crystal indicator.
Background technology
Liquid crystal display (LCD) device is driven based on the optical anisotropy of liquid crystal material and polarization characteristic.The shape of liquid crystal molecule is long and thin, and liquid crystal molecule is arranged regularly along alignment direction.Light along the length of liquid crystal molecule and thin shape by the LCD device.The intensity or the direction of the electric field that applies to liquid crystal molecule depended in the orientation of liquid crystal molecule.By intensity or the direction of controlling this electric field, the orientation of liquid crystal molecule is controlled with display image.
In general, the LCD device comprises two substrates, and these two substrates are spaced apart and face with each other, and is inserted with liquid crystal layer between these two substrates.Each substrate all comprises electrode.Electrode from corresponding substrate faces with each other.By between electrode, generating electric field to each electrode application voltage.The alignment direction of liquid crystal molecule changes with the intensity of electric field or the variation of direction.
Fig. 1 be schematically illustration according to the figure of the LCD device of prior art.In Fig. 1, the LCD device 11 of prior art comprises transparent lower substrate 10 and the transparent upper 30 that is spaced apart from each other and faces with each other.This LCD device also comprises the liquid crystal layer (not shown) that is inserted between infrabasal plate 10 and the upper substrate 30.
On the inside surface of infrabasal plate 10, be formed with select lines 12 and data line 20, and select lines 12 is intersected with each other to limit pixel region P with data line 20.Locate to be formed with thin film transistor (TFT) T in the select lines 12 and the point of crossing of data line 20.Thin film transistor (TFT) T presses the matrix pattern and arranges.Each thin film transistor (TFT) T comprises grid 14, active layer 16, source electrode 17 and drains 18.Be formed with pixel electrode 22 at each pixel region P place, and pixel electrode 22 is connected to corresponding thin film transistor (TFT) T.Pixel electrode 22 is formed by the good transparent conductive material of printing opacity (for example, indium tin oxide).
On the inside surface of upper substrate 30, be formed with black matrix 32 in the face of infrabasal plate 10.The non-display area that black matrix 32 covers such as select lines 12, data line 20 and thin film transistor (TFT) T, and have around the mesh shape of pixel region P.In each opening of the grid of black matrix 32, be formed with color-filter layer.Color-filter layer comprises and the corresponding red color filter pattern of pixel region P 34a, green color filter pattern 34b and blue color filter pattern 34c.On black matrix 32 and color- filter layer 34a, 34b and 34c, be formed with transparent common electrode 36.
The infrabasal plate 10 that comprises select lines 12, data line 20, thin film transistor (TFT) T and pixel electrode 22 can be called array base palte.The upper substrate 30 that comprises black matrix 32, color- filter layer 34a, 34b and 34c and public electrode 36 can be called filter substrate.
Manufacturing array substrate and filter substrate are aimed at them individually, then they are engaged with each other, and make liquid crystal board thus.At this moment, cause the possibility that light leak takes place very high because of aiming at allowance.In order to prevent light leak, the width of black matrix 32 can be wideer, and this causes reducing of aperture area.
Therefore, in order to address this problem, proposed color-filter layer is formed on color filter (COA) type LCD device on the array structure on the array base palte.
Fig. 2 be schematically illustration according to the sectional view of the array base palte that is used for COA type LCD device of prior art.
In Fig. 2, on transparent insulation substrate 50, be formed with thin film transistor (TFT) T, and thin film transistor (TFT) T comprises grid 54, active layer 58, ohmic contact layer 60, source electrode 62 and drains 64.In addition, on substrate 50, be formed with select lines 52 and data line 66.Grid 54 is connected to select lines 52, and source electrode 62 is connected to data line 66.Although this is not shown, select lines 52 is intersected with each other to limit pixel region P with data line 66.On the substrate 50 that comprises thin film transistor (TFT) T, select lines 52 and data line 66, be formed with black matrix BM and color-filter layer.Black matrix BM is corresponding with thin film transistor (TFT) T, and covers active layer 58.Color-filter layer comprises and corresponding corresponding red color filter 72a of pixel region P and green color filter 72b.Color-filter layer also comprises the blue color filter (not shown).
On color-filter layer, be formed with transparent pixels electrode 76.Pixel electrode 76 is connected to drain electrode 64.
Because array base palte comprises color-filter layer, therefore needn't design by considering the orientation allowance.Therefore, can obtain aperture area more.
Point out in passing, in comprising the LCD device of array base palte, pixel electrode 76 and be formed on and the array base palte opposing substrates on the public electrode (not shown) between generate electric field, and this electric field and substrate 50 are perpendicular.The visual angle of this LCD device is very narrow.In order to increase the visual angle of LCD device, proposed public electrode and pixel electrode be formed in the face on the same substrate and switched (IPS) mode LCD device.
Fig. 3 is the sectional view of illustration according to the array base palte that is used for COA-IPS mode LCD device of prior art.Fig. 4 is the synoptic diagram of specific inductive capacity of the color filter pattern of key diagram 3.
In Fig. 3 and Fig. 4, on insulated substrate 80, be limited with pixel region P.In pixel region P, be formed with thin film transistor (TFT) T and color- filter layer 96a, 96b and 96c, pixel electrode 98a and public electrode 98b.
Thin film transistor (TFT) T comprises grid 84, active layer 88a, ohmic contact layer 88b, source electrode 90 and drains 92.Grid 84 is connected to select lines 82, and source electrode 90 is connected to data line 94.Although this is not shown, select lines 82 is intersected with each other with data line 94, and is arranged in the place, both sides of pixel region P.
Above the substrate 80 that comprises thin film transistor (TFT) T, select lines 82 and data line 94, form color- filter layer 96a, 96b and 96c.Color-filter layer comprises red color filter pattern 96a, green color filter layer pattern 96b and blue color filter pattern 96c.Between thin film transistor (TFT) T and color filter pattern 96a, 96b and 96c, be formed with black matrix BM.
Above color filter pattern 96a, 96b and 96c, form pixel electrode 98a and public electrode 98b.Pixel electrode 98a and public electrode 98b are spaced apart from each other and replace each other.Pixel electrode 98a is connected to drain electrode 92, and according to the operation of thin film transistor (TFT) T and in each pixel region P received signal independently.The public electrode 98b of all pixel region P receives common signal.This common signal can be direct current (DC) voltage of about 5V.
Simultaneously, color filter pattern 96a, 96b and 96c can be color filter pattern 96a, the 96b banding patterns identical with the 96c color in the wherein horizontal or vertical adjacent pixels district.Color filter pattern 96a, 96b and 96c can form by the pigment process for dispersing, in the pigment process for dispersing, apply pigment and disperse photochromics, then come the quick material of pigment dispersed light is carried out composition by photoetching treatment.Here, the painted thing that is used for color filter pattern 96a, 96b and 96c uses pigment.The photostability of these pigments and thermotolerance height.The pigment process for dispersing has been simplified the processing that forms color filter pattern 96a, 96b and 96c.
Green color filter pattern 96b is thicker than red color filter pattern 96a and blue color filter pattern 96c, makes that the excitation of green color filter pattern 96b can be consistent with the excitation of red color filter pattern 96a and blue color filter pattern 96c.Substrate;
Many select liness on described substrate along first direction;
Many data lines, these many data lines form along second direction, and intersect to limit first pixel region, second pixel region and the 3rd pixel region with described many select liness;
A plurality of thin film transistor (TFT)s, these a plurality of thin film transistor (TFT)s are at the place, point of crossing of described many select liness and described many data lines;
Red color filter pattern, green color filter pattern and blue color filter pattern, this red color filter pattern, green color filter pattern and blue color filter pattern are arranged sequentially in respectively in described first pixel region, described second pixel region and described the 3rd pixel region;
First concentric line, second concentric line and the 3rd concentric line, this first concentric line, second concentric line and the 3rd concentric line are corresponding with described first pixel region, described second pixel region and described the 3rd pixel region respectively, and receive first common electric voltage, second common electric voltage and the 3rd common electric voltage respectively, wherein, described second common electric voltage is different with described the 3rd common electric voltage with described first common electric voltage;
Pixel electrode above this pixel electrode each in described red color filter pattern, described green color filter pattern and described blue color filter pattern, and is connected in described a plurality of thin film transistor (TFT) one; And
Public electrode, above this public electrode each in described red color filter pattern, described green color filter pattern and described blue color filter pattern, and be connected in described first concentric line, described second concentric line and described the 3rd concentric line, described public electrode and described pixel electrode are spaced apart.
Yet,, also may cause occurring banded spot because of color filter pattern even COA-IPS mode LCD device aperture is bigger and the visual angle is wide.
With reference to Fig. 4, when in color filter pattern 96a, 96b and 96c each above when forming pixel electrode 98a and public electrode 98b, the electric field that generates between pixel electrode 98a and public electrode 98b is influenced by the specific inductive capacity of liquid crystal layer (not shown) of upside and color filter pattern 96a, the 96b of downside and the specific inductive capacity of 96c.Therefore, form the first capacitor CLC, form the second capacitor C by color filter pattern 96a, 96b in pixel electrode 98a, public electrode 98b and the respective pixel district and 96c by the liquid crystal layer at pixel electrode 98a, public electrode 98b and each pixel region place
CR, C
CGAnd C
CBThe first capacitor C of each pixel region
LCElectric capacity identical.Because the DIELECTRIC CONSTANT 3 of the DIELECTRIC CONSTANT 1 of the DIELECTRIC CONSTANT 2 of green color filter pattern 96b and red color filter pattern 96a and blue color filter pattern 96c is different, so the second capacitor C
CR, C
CGAnd C
CBThe electric capacity difference.For example, the DIELECTRIC CONSTANT 3 of the DIELECTRIC CONSTANT 1 of red color filter pattern 96a and blue color filter pattern 96c can be 4 ± 1, and the DIELECTRIC CONSTANT 2 of green color filter pattern 96b can be 5 ± 1.
Therefore, can not refresh the carrier wave that in color filter pattern 96a, 96b and 96c, generates smoothly.This causes reducing picture quality thus according to the after image of color filter pattern 96a, 96b and 96c or banded spot.
Summary of the invention
Therefore, the present invention is intended to the array base palte that is used for the LCD device and the manufacture method thereof of one or more problem that a kind of limitation and shortcoming of eliminating basically because of prior art cause.
The array base palte and the manufacture method thereof that provide a kind of picture quality to be used for the LCD device uniformly are provided.
Other features and advantages of the present invention will be set forth in the following description, and will partly become clear according to instructions, perhaps can know by implementing the present invention.These purposes of the present invention and other advantages are realized by the structure of specifically noting in explanatory note book and claims and accompanying drawing and obtain.
In order to realize these and other advantages, and according to institute's imbody and broadly described aim of the present invention herein, the invention provides a kind of array base palte of the LCD of being used for device, this array base palte comprises: substrate; Many select liness on described substrate along first direction; Many data lines, these many data lines form along second direction, and intersect to limit first pixel region, second pixel region and the 3rd pixel region with described many select liness; A plurality of thin film transistor (TFT)s of locating in the point of crossing of described many select liness and described many data lines; Be arranged sequentially in red color filter pattern, green color filter pattern and blue color filter pattern in described first pixel region, described second pixel region and described the 3rd pixel region respectively; First concentric line, second concentric line and the 3rd concentric line, this first concentric line, second concentric line and the 3rd concentric line are corresponding with described first pixel region, described second pixel region and described the 3rd pixel region respectively, and receive first common electric voltage, second common electric voltage and the 3rd common electric voltage respectively, wherein, described second common electric voltage is different from described first common electric voltage and described the 3rd common electric voltage; Pixel electrode above this pixel electrode each in described red color filter pattern, described green color filter pattern and described blue color filter pattern, and is connected in described a plurality of thin film transistor (TFT) one; And public electrode, above this public electrode each in described red color filter pattern, described green color filter pattern and described blue color filter pattern, and be connected in described first concentric line, described second concentric line and described the 3rd concentric line, described public electrode and described pixel electrode are spaced apart.
On the other hand, provide a kind of manufacture method of array base palte of the LCD of being used for device, this method may further comprise the steps: first direction forms many select liness in the substrate upper edge; Intersect to limit many data lines of first pixel region, second pixel region and the 3rd pixel region with described many select liness along second direction formation; Place, point of crossing at described many select liness and described many data lines forms a plurality of thin film transistor (TFT)s; Form corresponding with described first pixel region, described second pixel region and described the 3rd pixel region respectively and receive first concentric line, second concentric line and the 3rd concentric line of first common electric voltage, second common electric voltage and the 3rd common electric voltage respectively, wherein, described second common electric voltage is different from described first common electric voltage and described the 3rd common electric voltage; Form the red color filter pattern, green color filter pattern and the blue color filter pattern that are arranged sequentially in respectively in described first pixel region, described second pixel region and described the 3rd pixel region; Form one the pixel electrode that is connected in described a plurality of thin film transistor (TFT) above in described red color filter pattern, described green color filter pattern and described blue color filter pattern each; And in described red color filter pattern, described green color filter pattern and described blue color filter pattern each above form one public electrode being connected in described first concentric line, described second concentric line and described the 3rd concentric line, described public electrode and described pixel electrode are spaced apart.
On the other hand, proposed a kind of array base palte of the LCD of being used for device, this array base palte that is used for the LCD device comprises: substrate; Many select liness on described substrate along first direction; Many data lines, these many data lines form along second direction, and intersect to limit a plurality of pixel regions with described many select liness; Concentric line between the adjacent select lines; The thin film transistor (TFT) of locating in each point of crossing of described many select liness and described many data lines; Be arranged sequentially in red color filter pattern, green color filter pattern and blue color filter pattern in described a plurality of pixel region respectively; Public electrode above this public electrode each in described red color filter pattern, described green color filter pattern and described blue color filter pattern, and is connected to described concentric line; And pixel electrode, this pixel electrode and is connected to described thin film transistor (TFT) above described public electrode, and described pixel electrode and described public electrode overlap mutually.
On the other hand, provide a kind of manufacture method of array base palte of the LCD of being used for device, this method may further comprise the steps: first direction forms many select liness in the substrate upper edge; Intersect to limit many data lines of a plurality of pixel regions with described many select liness along second direction formation; Between adjacent select lines, form concentric line; Each place, point of crossing at described many select liness and described many data lines forms thin film transistor (TFT); Form red color filter pattern, green color filter pattern and blue color filter pattern above described thin film transistor (TFT), this red color filter pattern, green color filter pattern and blue color filter pattern are arranged sequentially in respectively in described a plurality of pixel region; Form the public electrode that is connected to described concentric line above in described red color filter pattern, described green color filter pattern and described blue color filter pattern each; And above described public electrode, forming the pixel electrode that is connected to described thin film transistor (TFT), described pixel electrode and described public electrode overlap mutually.
Should be appreciated that general introduction above all is exemplary and indicative with hereinafter detailed description, aim to provide further explanation as the present invention for required protection.
Description of drawings
Accompanying drawing is included to provide further understanding of the present invention, and it is merged in and constitutes the part of this instructions, the accompanying drawing illustration embodiments of the present invention, and be used from instructions one and explain principle of the present invention.In the accompanying drawings:
Fig. 1 be schematically illustration according to the figure of the LCD device of prior art;
Fig. 2 be schematically illustration according to the sectional view of the array base palte that is used for COA type LCD device of prior art;
Fig. 3 is the sectional view of illustration according to the array base palte that is used for COA-IPS mode LCD device of prior art;
Fig. 4 is the synoptic diagram of specific inductive capacity of the color filter pattern of key diagram 3;
Fig. 5 is the equivalent electrical circuit according to the LCD device of first embodiment of the invention;
Fig. 6 is the planimetric map of illustration according to the array base palte that is used for the LCD device of first embodiment of the invention;
Fig. 7 is the equivalent electrical circuit according to the LCD device of second embodiment of the invention;
Fig. 8 is the synoptic diagram of illustration according to the array base palte that is used for the LCD device of third embodiment of the invention;
Fig. 9 is the planimetric map of illustration according to the array base palte that is used for the LCD device of third embodiment of the invention; And
Figure 10 A is the sectional view of the array base palte that is used for the LCD device during illustration is handled according to the manufacturing of the 3rd embodiment to Figure 10 C.
Embodiment
To be elaborated to embodiments of the present invention below, in the accompanying drawing illustration example of these embodiments.
Fig. 5 is the equivalent electrical circuit according to the LCD device of first embodiment of the invention.
In Fig. 5, select lines G1, G2, G3 form to Gn (n is a natural number) along first direction and are spaced apart from each other.Data line D1, D2, D3 form to Dm (m is a natural number) along second direction and intersect to limit pixel region P to Gn with select lines G1, G2, G3.
Be formed with thin film transistor (TFT) T, liquid crystal capacitor C at each pixel region P place
LCAnd holding capacitor C
STThin film transistor (TFT) T is connected to corresponding select lines G1, G2, G3 or Gn and corresponding data line D1, D2, D3 or Dm.Holding capacitor C
STBe connected in parallel to liquid crystal capacitor C in fact
LC
In each pixel region P, form color- filter layer 130a, 130b and 130c by color corresponding to the mode of a pixel region P.Here, color- filter layer 130a, 130b and 130c are to be same color and banding pattern connected to one another along the color filter pattern of second direction wherein.Color-filter layer comprises red color filter pattern 130a, green color filter pattern 130b and blue color filter pattern 130c.
Liquid crystal capacitor C
LCBe connected to thin film transistor (TFT) T and corresponding concentric line 108a, 108b or 108c.Holding capacitor C
STBe connected to thin film transistor (TFT) T and storage line 106.Liquid crystal capacitor C
LCReceive respectively data voltage and common electric voltage from corresponding data line D1, D2, D3 or Dm and corresponding concentric line 108a, 108b or 108c.Holding capacitor C
STReceive respectively data voltage and storage voltage from corresponding data line D1, D2, D3 or Dm and storage line 106.
Common electric voltage is direct current (DC) voltage.Data voltage is to exchange (AC) voltage.Data voltage is about common electric voltage alternation between positive polarity and negative polarity.
The All Ranges that spreads all over the LCD device, holding capacitor C
STMemory capacitance all identical.Apply identical storage voltage by storage line 106 to all pixel region P.
On the other hand, the first concentric line 108a, the second concentric line 108b and the 3rd concentric line 108c are connected to respectively the corresponding liquid crystal capacitor C with red color filter pattern 130a, green color filter pattern 130b and the corresponding pixel region P of blue color filter pattern 130c place
LCPass through the first concentric line 108a, the second concentric line 108b and the 3rd concentric line 108c respectively to liquid crystal capacitor C
LCApply different common electric voltages, with the difference of compensation because of the different pixel voltages that cause of specific inductive capacity of color filter pattern 130a, 130b and 130c.
That is, if alternately drive pixel voltage based on identical common electric voltage when there are differences between pixel voltage, then the positive polarity of pixel voltage and negative polarity are inconsistent.Therefore, may there are differences between the pixel voltage in neighbor district, thereby banded spot may occur.
Yet, can pass through to liquid crystal capacitor C
LCApply different common electric voltages and solve this problem.
Fig. 6 is the planimetric map of illustration according to the array base palte that is used for the LCD device of first embodiment of the invention.
In Fig. 6, be formed with select lines 102 at substrate 100 upper edge first directions.Be formed with data line 120 along second direction.Select lines 102 and data line 120 are intersected with each other to limit pixel region P.Locate to be formed with thin film transistor (TFT) T in the select lines 102 and the point of crossing of data line 120.Thin film transistor (TFT) T comprises grid 104, active layer 112, source electrode 116 and drains 118.Grid 104 is connected to select lines 102, and source electrode 116 is connected to data line 120.
Be formed with storage line 106 and concentric line 108 along first direction, and storage line 106 and concentric line 108 are spaced apart from each other.Storage line 106 can be adjacent with select lines 102.
In pixel region P, be formed with color filter pattern 130a (for example, red color filter pattern).Although this is not shown, along being formed with green color filter pattern and blue color filter pattern respectively in following two pixel regions of first direction.The green color filter pattern can be thicker than red color filter pattern and blue color filter pattern.
Although this is not shown, can also between thin film transistor (TFT) T and color filter pattern 130a, form black matrix.
In pixel region P, be formed with pixel electrode 132a and 132b and public electrode 134a and 134b, and pixel electrode 132a and 132b and public electrode 134a and 134b are spaced apart from each other.Although this is not shown, pixel electrode 132a and 132b and public electrode 134a and 134b are arranged in the top of color filter pattern 130a.
Pixel electrode comprises the first horizontal component 132a and the first vertical component 132b.The first horizontal component 132a is connected to drain electrode 118.The first horizontal component 132a and storage line 106 overlap mutually to form holding capacitor.The first vertical component 132b extends along second direction from the first horizontal component 132a.Public electrode comprises the second horizontal component 134a and the second vertical component 134b.The second horizontal component 134a is connected to concentric line 108.The second vertical component 134b is from the second horizontal component 134a extension, and alternates with the first vertical component 132b.
As mentioned above, public electrode 134a and 134b receive with along the different common electric voltage of common electric voltage in first direction and the pixel region P adjacent pixels district.
Therefore, can compensate difference, thereby can show the uniform image quality because of the different pixel voltages that cause of specific inductive capacity of color filter pattern.
Fig. 7 is the equivalent electrical circuit according to the LCD device of second embodiment of the invention.
In Fig. 7, be formed with select lines G1, G2, G3 to Gn (n is a natural number) along first direction, and select lines G1, G2, G3 are spaced apart from each other to Gn.Be formed with data line D1, D2, D3 to Dm (m is a natural number) along second direction, and data line D1, D2, D3 intersect to limit pixel region P to Gn to Dm and select lines G1, G2, G3.
Be formed with thin film transistor (TFT) T, liquid crystal capacitor C at each pixel region P place
LCAnd holding capacitor C
STThin film transistor (TFT) T is connected to corresponding select lines G1, G2, G3 or Gn and corresponding data line D1, D2, D3 or Dm.Holding capacitor C
STBe connected in parallel to liquid crystal capacitor C in fact
LC
In each pixel region P, form color- filter layer 230a, 230b and 230c by color corresponding to the mode of a pixel region P.Here, color- filter layer 230a, 230b and 230c are to be same color and banding pattern connected to one another along the color filter pattern of second direction wherein.Color-filter layer comprises red color filter pattern 230a, green color filter pattern 230b and blue color filter pattern 230c.
Liquid crystal capacitor C
LCBe connected to thin film transistor (TFT) T and corresponding concentric line 208a or 208b.Holding capacitor C
STBe connected to thin film transistor (TFT) T and storage line 206.
The All Ranges that spreads all over the LCD device, holding capacitor C
STMemory capacitance all identical.Apply identical storage voltage by storage line 206 to all pixel region P.Storage line 206 among all pixel region P can couple together.
On the other hand, the first concentric line 208a is connected to the liquid crystal capacitor C with red color filter pattern 230a and the corresponding pixel region P of blue color filter pattern 230c place
LC, the second concentric line 208b is connected to the liquid crystal capacitor C with the corresponding pixel region P of green color filter pattern 230b place
LCThe first concentric line 208a is connected to the first public voltage source (not shown), and the second concentric line 208b is connected to the second public voltage source (not shown).
Because red color filter pattern 230a is similar with the specific inductive capacity of blue color filter pattern 230c, thus to red color filter pattern 230a and the corresponding liquid crystal capacitor C of blue color filter pattern 230c
LCApply identical voltage.Put on the pairing liquid crystal capacitor C of red color filter pattern 230a and blue color filter pattern 230c
LCVoltage with put on the pairing liquid crystal capacitor C of green color filter pattern 230b
LCThe voltage difference.
Structure according to the array base palte that is used for the LCD device of second embodiment can be identical with the structure of first embodiment shown in Fig. 6.
Fig. 8 is the synoptic diagram of illustration according to the array base palte that is used for the LCD device of third embodiment of the invention.This LCD device is that color-filter layer is formed on COA type on the array base palte.
In Fig. 8, on substrate 300, be formed with red color filter pattern 324a, green color filter pattern 324b and blue color filter pattern 324c.All be formed with public electrode 328 in red color filter pattern 324a, green color filter pattern 324b and blue color filter pattern 324c each.Above public electrode 328, be formed with pixel electrode 334b.Pixel electrode 334b and public electrode 328 overlap mutually.
When public electrode 328 and pixel electrode 334b apply voltage, between public electrode 328 and pixel electrode 334b, generate electric field.At this moment, even generate electric charge in color filter pattern 324a, 324b and 324c, thereby this electric charge also can be shielded by public electrode 328 and can not influence and the corresponding corresponding pixel of color.Therefore, can drive pixel equably, and not exist because of the different influences that cause of the specific inductive capacity of color filter pattern 324a, 324b and 324c, thus can the display quality uniform image.
Fig. 9 is the planimetric map of illustration according to the array base palte that is used for the LCD device of third embodiment of the invention.
In Fig. 9, be formed with select lines 302 at substrate 300 upper edge first directions.Be formed with data line 314 along second direction.Select lines 302 is intersected with each other to limit pixel region P with data line 314.Locate to be formed with thin film transistor (TFT) T in the select lines 302 and the point of crossing of data line 314.Thin film transistor (TFT) T comprises grid 304, active layer 310, source electrode 316 and drains 318.Grid 304 is connected to select lines 302, and source electrode 316 is connected to data line 314.
Be formed with concentric line 306 along first direction, and concentric line 306 is spaced apart with select lines 302.
In pixel region P, be formed with color filter pattern 324b (for example, green color filter pattern).Although this is not shown, along being formed with red color filter pattern and blue color filter pattern respectively in first direction and the pixel region P adjacent pixels district.Along being formed with identical color filter pattern among the neighbor district P of second direction.
Although this is not shown, can between thin film transistor (TFT) T and color filter pattern 324b, form black matrix, incide active layer 310 to prevent light.
In pixel region P, be formed with pixel electrode 334a and 334b and public electrode 328.Although this is not shown, can be above color filter pattern 130a laying out pixel electrode 132a and 132b and public electrode 134a and 134b.The shaped flat of public electrode 328 and corresponding with the size of pixel region P haply.Pixel electrode comprises horizontal component 334a and vertical component 334b.Horizontal component 334a is connected to drain electrode 318.Vertical component 334b extends from horizontal component 334a along second direction.Between public electrode 328 and pixel electrode 334a and 334b, be furnished with the insulation course (not shown).Vertical component 334b and public electrode 328 overlap mutually.
In array base palte, the width of vertical component 334b is narrower, makes the electric field between public electrode 328 and the vertical component 334b influence the center of each vertical component 334b just.Therefore, the light leak (for example, banded spot disclination) on the electrode of LCD device is minimized.
Figure 10 A is the sectional view of the array base palte that is used for the LCD device during illustration is handled according to the manufacturing of the 3rd embodiment to Figure 10 C.Figure 10 A is corresponding with the line X-X of Fig. 9 to Figure 10 C.
In Figure 10 A, also then this conductive material is carried out composition forms Fig. 9 on substrate 300 select lines 302 and grid 304 by depositing conductive material.Metal material can be selected from the metal group that comprises chromium (Cr), molybdenum (Mo), tungsten (W), aluminium (Al), copper (Cu) and titanium (Ti).Simultaneously, form the concentric line 306 of Fig. 9 abreast with the select lines 302 of Fig. 9.
Come on the roughly whole surface of the substrate 300 of the concentric line 306 of the select lines 302 that comprises Fig. 9, grid 304 and Fig. 9, to form gate insulation layer 308 by deposition insulating material.Insulating material can be from comprising silicon nitride (SiN
x) and silicon dioxide (SiO
2) the inorganic insulating material group in select.
Next, by deposition of intrinsic amorphous silicon and doped amorphous silicon and then this intrinsic amorphous silicon and doped amorphous silicon are carried out that composition forms and grid 304 corresponding active layer 310 and ohmic contact layers 312 on gate insulation layer 308.
Also then this conductive material being carried out composition by depositing conductive material forms data line 314, source electrode 316 and drains 318 on the substrate 300 that comprises active layer 310 and ohmic contact layer 312.Conductive material can be selected from above-mentioned metal group.Although this is not shown, data line 314 intersects to limit pixel region P with select lines 304.Source electrode 316 is from data line 314 extensions.Source electrode 316 and drain electrode 318 are spaced apart from each other above grid 304 and active layer 310.After forming source electrode 316 and drain electrode 318, the part of the ohmic contact layer 312 between source electrode 316 and the drain electrode 318 is removed, expose active layer 310 thus.
A kind ofly come to comprise data line 314, source electrode 316 and the roughly whole surface of 318 the substrate 300 of draining forms first passivation layer 320 by what deposit was selected from above-mentioned inorganic insulating material group.The surface of the exposure of first passivation layer, 320 protection active layers 310.First passivation layer 320 is relative with the adhesiveness of active layer 310 good, and the defective in the interface between passivation layer 320 and the active layer 310 is minimized.
In Figure 10 B, also then this black resin is carried out composition forms black matrix 322 above thin film transistor (TFT) T by the roughly whole surface-coated black resin to the substrate 300 that comprises first passivation layer 320.If with substrate 300 opposing substrates on exist and the corresponding black matrix of thin film transistor (TFT) T, then can save black matrix 322.
Next, by to substrate 300 coated red resins and then this red resin is carried out composition and comprising among the pixel region P on the substrate 300 of black matrix 322 and form color filter pattern 324a (for example, red color filter pattern).Then, by the method identical, for example in ensuing pixel region, form blue color filter pattern 324c and green color filter pattern (not shown) with color filter pattern 324a.
Here, although this is not shown, the green color filter pattern can be thicker than red color filter pattern and blue color filter pattern, so that the excitation of red color filter pattern, green color filter pattern and blue color filter pattern is consistent.
Next, optionally remove color filter pattern 324a, black matrix 322 and first passivation layer 320, to form first drain contact hole 326 that exposes drain electrode 318.
In Figure 10 C, also then this transparent conductive material is carried out composition forms public electrode 328 on color filter pattern 324a by the deposit transparent conductive material.In pixel region P, public electrode 328 is a sheet.Transparent conductive material can be selected from the transparent conductive material group that comprises indium tin oxide and indium-zinc oxide.
Next, a kind of next roughly whole surface of selecting from above-mentioned inorganic insulating material group by deposit at the substrate 300 that comprises public electrode 328 forms second passivation layer 330.
Optionally remove second passivation layer 330 and the corresponding part of first drain contact hole Figure 10 B, form second drain contact hole 332 that exposes drain electrode 318 thus.
Also then this transparent conductive material is carried out composition forms pixel electrode 334a and 334b on second passivation layer 330 by the deposit transparent conductive material.Transparent conductive material can be selected from above-mentioned transparent conductive material group.
Pixel electrode comprises horizontal component 334a and vertical component 334b.Horizontal component 334a contacts exposed drain 318.Although this is not shown, vertical component 334b is from horizontal component 334a extension.
In the present invention, even red color filter pattern, green color filter pattern are different with the specific inductive capacity of blue color filter pattern, there is not the influence that causes because of specific inductive capacity yet.Therefore, can the display quality uniform image.
It will be apparent to those skilled in the art that under the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations the filter substrate and the manufacture method thereof of the LCD of being used for device of the present invention.Thereby the present invention is intended to contain modification of the present invention and the modification in the scope that falls into claims and equivalent thereof.
The application requires korean patent application 10-2007-0032220 number and korean patent application 10-2007-0037256 number the right of priority of submitting in Korea S on April 17th, 2007 in Korea S's submission on April 2nd, 2007, at all purposes, here by reference with its merging, as having carried out sufficient elaboration at this.
Claims (20)
1, a kind of array base palte that is used for the LCD device, this array base palte comprises:
Substrate;
Many select liness on described substrate along first direction;
Many data lines, these many data lines form along second direction, and intersect to limit first pixel region, second pixel region and the 3rd pixel region with described many select liness;
A plurality of thin film transistor (TFT)s, these a plurality of thin film transistor (TFT)s are positioned at the place, point of crossing of described many select liness and described many data lines;
Be arranged sequentially in red color filter pattern, green color filter pattern and blue color filter pattern in described first pixel region, described second pixel region and described the 3rd pixel region respectively;
First concentric line, second concentric line and the 3rd concentric line, this first concentric line, second concentric line and the 3rd concentric line are corresponding with described first pixel region, described second pixel region and described the 3rd pixel region respectively, and receive first common electric voltage, second common electric voltage and the 3rd common electric voltage respectively, wherein, described second common electric voltage is different with described the 3rd common electric voltage with described first common electric voltage;
Pixel electrode above this pixel electrode each in described red color filter pattern, described green color filter pattern and described blue color filter pattern, and is connected in described a plurality of thin film transistor (TFT) one; And
Public electrode, above this public electrode each in described red color filter pattern, described green color filter pattern and described blue color filter pattern, and be connected in described first concentric line, described second concentric line and described the 3rd concentric line, described public electrode and described pixel electrode are spaced apart.
2, array base palte according to claim 1, wherein, described green color filter pattern is thicker than described red color filter pattern and described blue color filter pattern.
3, array base palte according to claim 1, wherein, described first common electric voltage is different with described the 3rd common electric voltage.
4, array base palte according to claim 1, wherein, described first common electric voltage equals described the 3rd common electric voltage.
5, array base palte according to claim 1, this array base palte also comprise the storage line that parallels with described many select liness and overlap mutually with described pixel electrode.
6, array base palte according to claim 5, wherein, described pixel electrode comprises first horizontal component and first vertical component, and described first horizontal component is connected to described thin film transistor (TFT) and overlaps mutually with described storage line, and described first vertical component extends from described first horizontal component.
7, array base palte according to claim 6, wherein, described public electrode comprises second horizontal component and second vertical component, described second horizontal component is connected in described first concentric line, described second concentric line and described the 3rd concentric line, and described second vertical component alternates from described second horizontal component extension and with described first vertical component.
8, a kind of manufacture method that is used for the array base palte of LCD device, this method may further comprise the steps:
First direction forms many select liness in the substrate upper edge;
Intersect to limit many data lines of first pixel region, second pixel region and the 3rd pixel region with described many select liness along second direction formation;
Place, point of crossing at described many select liness and described many data lines forms a plurality of thin film transistor (TFT)s;
Form corresponding with described first pixel region, described second pixel region and described the 3rd pixel region respectively and receive first concentric line, second concentric line and the 3rd concentric line of first common electric voltage, second common electric voltage and the 3rd common electric voltage respectively, wherein, described second common electric voltage is different from described first common electric voltage and described the 3rd common electric voltage;
Form the red color filter pattern, green color filter pattern and the blue color filter pattern that are arranged sequentially in respectively in described first pixel region, described second pixel region and described the 3rd pixel region;
Form one the pixel electrode that is connected in described a plurality of thin film transistor (TFT) above in described red color filter pattern, described green color filter pattern and described blue color filter pattern each; And
Form one the public electrode that is connected in described first concentric line, described second concentric line and described the 3rd concentric line above in described red color filter pattern, described green color filter pattern and described blue color filter pattern each, described public electrode and described pixel electrode are spaced apart.
9, method according to claim 8, wherein, described green color filter pattern is thicker than described red color filter pattern and described blue color filter pattern.
10, method according to claim 8, wherein, described first common electric voltage is different with described the 3rd common electric voltage.
11, method according to claim 8, wherein, described first common electric voltage equals described the 3rd common electric voltage.
12, method according to claim 8, this method is further comprising the steps of: forming thin film transistor (TFT) and forming between the step of red color filter pattern, green color filter pattern and blue color filter pattern, form black matrix in each in described first pixel region, described second pixel region and described the 3rd pixel region.
13, a kind of array base palte that is used for the LCD device, this array base palte comprises:
Substrate;
Many select liness on described substrate along first direction;
Many data lines, these many data lines form along second direction, and intersect to limit a plurality of pixel regions with described many select liness;
Concentric line between the adjacent select lines;
Thin film transistor (TFT), this thin film transistor (TFT) is at each place, point of crossing of described many select liness and described many data lines;
Be arranged sequentially in red color filter pattern, green color filter pattern and blue color filter pattern in described a plurality of pixel region respectively;
Public electrode above this public electrode each in described red color filter pattern, described green color filter pattern and described blue color filter pattern, and is connected to described concentric line; And
Pixel electrode, this pixel electrode and are connected to described thin film transistor (TFT) above described public electrode, described pixel electrode and described public electrode overlap mutually.
14, array base palte according to claim 13, wherein, described green color filter pattern is thicker than described red color filter pattern and described blue color filter pattern.
15, array base palte according to claim 13, this array base palte also comprise the black matrix between in the described red color filter pattern in described thin film transistor (TFT) and each pixel region, described green color filter pattern and the described blue color filter pattern one.
16, array base palte according to claim 13, wherein, described pixel electrode comprises horizontal component and vertical component, and described horizontal component is connected to described thin film transistor (TFT), and described vertical component overlaps mutually from described horizontal component extension and with described public electrode.
17, a kind of manufacture method that is used for the array base palte of LCD device, this method may further comprise the steps:
First direction forms many select liness in the substrate upper edge;
Intersect to limit many data lines of a plurality of pixel regions with described many select liness along second direction formation;
Between adjacent select lines, form concentric line;
Each place, point of crossing at described many select liness and described many data lines forms thin film transistor (TFT);
Form red color filter pattern, green color filter pattern and blue color filter pattern above described thin film transistor (TFT), this red color filter pattern, green color filter pattern and blue color filter pattern are arranged sequentially in respectively in described a plurality of pixel region;
Form the public electrode that is connected to described concentric line above in described red color filter pattern, described green color filter pattern and described blue color filter pattern each; And
Form the pixel electrode that is connected to described thin film transistor (TFT) above described public electrode, described pixel electrode and described public electrode overlap mutually.
18, method according to claim 17, wherein, described green color filter pattern is thicker than described red color filter pattern and described blue color filter pattern.
19, method according to claim 17, this method is further comprising the steps of: forming thin film transistor (TFT) and forming between the step of red color filter pattern, green color filter pattern and blue color filter pattern, form black matrix in each pixel region.
20, method according to claim 17, this method is further comprising the steps of: forming thin film transistor (TFT) and forming between the step of red color filter pattern, green color filter pattern and blue color filter pattern, form the first passivation stratification; And, form second passivation layer forming public electrode and forming between the step of pixel electrode.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070032220A KR101350430B1 (en) | 2007-04-02 | 2007-04-02 | An array substrate for IPS-LCD with color-filter on array |
| KR10-2007-0032220 | 2007-04-02 | ||
| KR1020070032220 | 2007-04-02 | ||
| KR1020070037256 | 2007-04-17 | ||
| KR1020070037256A KR20080093504A (en) | 2007-04-17 | 2007-04-17 | Color filter on array type in plain switching mode lcd and, method of fabricating of the same |
| KR10-2007-0037256 | 2007-04-17 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910168928XA Division CN101666937B (en) | 2007-04-02 | 2007-12-29 | Array substrate for liquid crystal display device and manufacturing method of the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101281332A true CN101281332A (en) | 2008-10-08 |
| CN100594411C CN100594411C (en) | 2010-03-17 |
Family
ID=40013861
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710307381A Active CN100594411C (en) | 2007-04-02 | 2007-12-29 | Array substrate for liquid crystal display device and manufacturing method of the same |
| CN200910168928XA Active CN101666937B (en) | 2007-04-02 | 2007-12-29 | Array substrate for liquid crystal display device and manufacturing method of the same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910168928XA Active CN101666937B (en) | 2007-04-02 | 2007-12-29 | Array substrate for liquid crystal display device and manufacturing method of the same |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101350430B1 (en) |
| CN (2) | CN100594411C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102156364A (en) * | 2011-01-17 | 2011-08-17 | 华映视讯（吴江）有限公司 | Liquid crystal display panel |
| CN104142593A (en) * | 2014-07-16 | 2014-11-12 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN105974659A (en) * | 2016-07-29 | 2016-09-28 | 上海中航光电子有限公司 | Array substrate and display panel |
| CN106066552A (en) * | 2008-11-28 | 2016-11-02 | 株式会社半导体能源研究所 | Liquid crystal indicator |
| US9753342B2 (en) | 2014-06-17 | 2017-09-05 | Boe Technology Group Co., Ltd. | Color filter array substrate, display device and manufacturing method of color filter array substrate |
| CN110568687A (en) * | 2019-09-03 | 2019-12-13 | 深圳市华星光电技术有限公司 | pixel structure and display device |
| WO2023115420A1 (en) * | 2021-12-20 | 2023-06-29 | Tcl华星光电技术有限公司 | Display apparatus |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201229996A (en) * | 2011-01-05 | 2012-07-16 | Chunghwa Picture Tubes Ltd | Liquid crystal display panel |
| TWI486685B (en) * | 2012-12-28 | 2015-06-01 | Ye Xin Technology Consulting Co Ltd | Liquid crystal display panel, thin film transistor substrate and method of manufacturing same |
| CN104035231B (en) * | 2013-03-07 | 2017-04-12 | 群创光电股份有限公司 | Liquid crystal display panel and liquid crystal display device comprising same |
| TWI516836B (en) | 2013-03-07 | 2016-01-11 | 群創光電股份有限公司 | Liquid crystal display panel and liquid crystal display device containing the same |
| CN103353683B (en) * | 2013-06-26 | 2016-02-10 | 京东方科技集团股份有限公司 | A kind of array base palte and comprise the display device of this array base palte |
| KR102115464B1 (en) * | 2013-12-30 | 2020-05-27 | 엘지디스플레이 주식회사 | Thin film transistor array substrate and method for fabricating the same |
| CN104090434B (en) * | 2014-06-25 | 2016-10-05 | 京东方科技集团股份有限公司 | Array base palte and display device |
| TWI599834B (en) * | 2015-07-31 | 2017-09-21 | 友達光電股份有限公司 | Pixel structure and method for fabricating the same |
| CN105242468A (en) * | 2015-10-27 | 2016-01-13 | 深圳市华星光电技术有限公司 | Liquid crystal display panel reducing parasitic capacitances and manufacturing method thereof |
| CN105206570B (en) * | 2015-10-27 | 2018-11-23 | 深圳市华星光电技术有限公司 | A kind of display panel and its manufacturing method |
| KR101875695B1 (en) * | 2015-11-30 | 2018-07-06 | 엘지디스플레이 주식회사 | Array Substrate For Liquid Crystal Display Device And Method Of Fabricating The Same |
| CN107505765B (en) * | 2017-09-30 | 2020-07-03 | 深圳市华星光电技术有限公司 | Array substrate and display panel |
| KR102494467B1 (en) * | 2017-12-29 | 2023-01-31 | 엘지디스플레이 주식회사 | Display device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6663747B2 (en) | 2000-09-13 | 2003-12-16 | International Business Machines Corporation | Apparatus and method for enhancing the uniform etching capability of an ion beam grid |
| CN1615453A (en) | 2002-01-15 | 2005-05-11 | 三星电子株式会社 | Liquid crystal display and method for fabricating the display |
| KR100475167B1 (en) | 2002-12-30 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display and method of driving the same |
| KR101001520B1 (en) | 2003-10-09 | 2010-12-14 | 엘지디스플레이 주식회사 | In Plane Switching mode liquid crystal display device and the fabrication method thereof |
| KR101003829B1 (en) * | 2004-04-30 | 2010-12-23 | 엘지디스플레이 주식회사 | LCD with color-filter on TFT and method of fabricating of the same |
| KR101049001B1 (en) * | 2004-05-31 | 2011-07-12 | 엘지디스플레이 주식회사 | Liquid crystal display device of color filter on-film transistor (COT) structure of transverse electric field system (ISP) |
| KR101125254B1 (en) * | 2004-12-31 | 2012-03-21 | 엘지디스플레이 주식회사 | Thin Film Transistor Substrate of Fringe Field Switching Type And Fabricating Method Thereof, Liquid Crystal Display Panel Using The Same And Fabricating Method Thereof |
-
2007
- 2007-04-02 KR KR1020070032220A patent/KR101350430B1/en active IP Right Grant
- 2007-12-29 CN CN200710307381A patent/CN100594411C/en active Active
- 2007-12-29 CN CN200910168928XA patent/CN101666937B/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106066552A (en) * | 2008-11-28 | 2016-11-02 | 株式会社半导体能源研究所 | Liquid crystal indicator |
| US10985282B2 (en) | 2008-11-28 | 2021-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US11869978B2 (en) | 2008-11-28 | 2024-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| CN102156364A (en) * | 2011-01-17 | 2011-08-17 | 华映视讯（吴江）有限公司 | Liquid crystal display panel |
| US9753342B2 (en) | 2014-06-17 | 2017-09-05 | Boe Technology Group Co., Ltd. | Color filter array substrate, display device and manufacturing method of color filter array substrate |
| CN104142593A (en) * | 2014-07-16 | 2014-11-12 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN104142593B (en) * | 2014-07-16 | 2017-01-25 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN105974659A (en) * | 2016-07-29 | 2016-09-28 | 上海中航光电子有限公司 | Array substrate and display panel |
| CN110568687A (en) * | 2019-09-03 | 2019-12-13 | 深圳市华星光电技术有限公司 | pixel structure and display device |
| WO2023115420A1 (en) * | 2021-12-20 | 2023-06-29 | Tcl华星光电技术有限公司 | Display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101666937B (en) | 2011-02-09 |
| CN100594411C (en) | 2010-03-17 |
| CN101666937A (en) | 2010-03-10 |
| KR101350430B1 (en) | 2014-01-14 |
| KR20080089713A (en) | 2008-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100594411C (en) | Array substrate for liquid crystal display device and manufacturing method of the same | |
| US9759962B2 (en) | Liquid crystal display | |
| US8139183B2 (en) | Array substrate for liquid crystal display device and manufacturing method of the same | |
| US7532277B2 (en) | Liquid crystal display device using align mark | |
| CN102236226B (en) | Array substrate for in-plane switching mode liquid crystal display device | |
| US7139058B2 (en) | In-plane switching liquid crystal display device comprising unequal sub-pixel regions each controlled by individual switching elements and method of fabricating the same | |
| US7202928B2 (en) | Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same | |
| US8570473B2 (en) | Display substrate, liquid crystal display panel having the same, and method of manufacturing the liquid crystal display panel | |
| US7227607B2 (en) | Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same | |
| CN100362414C (en) | Plane switching mode liquid crystal display device and fabrication method thereof | |
| US20090279010A1 (en) | Liquid crystal display | |
| CN102436106A (en) | Liquid crystal display device and fabrication method thereof | |
| CN101604102A (en) | The array base palte of liquid crystal indicator and manufacture method thereof | |
| US8102495B2 (en) | Display substrate and display panel having the same | |
| CN102253544A (en) | Liquid crystal display device | |
| CN101196660B (en) | Liquid crystal display and method of manufacturing the same | |
| CN100390616C (en) | Inner switchover liquid crystal display device | |
| CN1325988C (en) | Photographic and video image system | |
| CN101149549A (en) | Liquid crystal display | |
| US8045114B2 (en) | Liquid crystal display device comprising an electric field distortion unit and the passivation layer is directly contacted on the first substrate of the pixel region | |
| US20030142254A1 (en) | Reflective liquid crystal display and method for fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |