CN101281259A - Anti-reflective coating having low resistance function with penetrating conductive layer as outmost layer - Google Patents
Anti-reflective coating having low resistance function with penetrating conductive layer as outmost layer Download PDFInfo
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- CN101281259A CN101281259A CNA2007100873807A CN200710087380A CN101281259A CN 101281259 A CN101281259 A CN 101281259A CN A2007100873807 A CNA2007100873807 A CN A2007100873807A CN 200710087380 A CN200710087380 A CN 200710087380A CN 101281259 A CN101281259 A CN 101281259A
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Abstract
An anti-reflective coating has a low resistance function and takes a penetrable conductive layer as the outermost layer. The skin layer substance of the anti-reflective coating is a penetrable surface conductance layer whose light reflectivity is below 0.5%, the electric impedance of the anti-reflective coating is between 0.5 ohm and 0.7 ohm, and the penetration rate is 55%-70%.
Description
Technical field
The present invention system relates to a kind of tool low resistance function and is outermost antireflecting coating with transparent conductive layer, particularly a kind of coating structure with high antireflective properties.
Background technology
Usually, on plastic base (plastic substrate), glass substrate (glass substrate) or the plastics web plate (plastic web) of LCD or plasma display, the capital adds an antireflecting coating structure, therefore has numerous coating structures to be disclosed.
United States Patent (USP) U.S.4,921,760 disclose a kind of coating that has the multi-layer anti-reflection of good adherence power between ceria and composite number fat, and this multilayer system comprises CeO
2, A1
2O
3, ZrO
2, SiO
2, TiO
2And Ta
2O
5, all thin layers of this multilayer system are all oxide, and this multilayer system includes three to five layers thin layer, and in one embodiment, the gross thickness of this five-layer structure is about 3580 dusts, and the material on the top layer of this multilayer system is SiO
2, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.46.
United States Patent (USP) U.S.5,105,310 disclose and a kind ofly use the reaction equation sputtering method and be configured in the coating of the multi-layer anti-reflection on the coaxial coating machine, and this multilayer system comprises TiO
2, SiO
2, ZnO, ZrO
2, and Ta
2O
5, all thin layers of this multilayer system are all oxide, and this multilayer system includes four to six layers thin layer, and in one embodiment, the gross thickness of these six layers of structures is about 4700 dusts, and the material on the top layer of this multilayer system is SiO
2, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.46.
United States Patent (USP) U.S.5,091,244 and U.S.5,407,733 disclose a kind of antireflecting coating of optical attenuation of tool electric conductivity of new kenel, it mainly is made up of the specific transitions metal nitride, thereby a tool electric conductivity, optical attenuation, antireflecting surface are provided, and this multilayer system comprises TiN, NbN, SnO
2, SiO
2, Al
2O
3And Nb
2O
5, all thin layers of this multilayer system are all nitride and oxide, and this multilayer system includes three to four layers thin layer, in one embodiment, the gross thickness of this four-layer structure is about 1610 dusts, and the penetrance of the visible light of this four layer system is lower than 50%, and the material on the top layer of this multilayer system is SiO
2, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.46.
United States Patent (USP) U.S.5,147,125 disclose a kind of use zinc paste, and anti-wavelength is less than the coating of the ultraviolet multi-layer anti-reflection of 380nm, and this multilayer system comprises TiO
2, SiO
2, ZnO and MgF
2, all thin layers of this multilayer system are oxide and fluoride, and this multilayer system includes four to six layers thin layer, and in one embodiment, the gross thickness of this five-layer structure is about 7350 dusts, and the material on the top layer of this multilayer system is MgF
2, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.38.
United States Patent (USP) U.S.5,170,291 disclose a kind of four layer systems, and it has an optical effect and high anti-reflection effect, this multilayer system can support modes such as chemical evapn layout, sputter or chemistry layout and form by pyrolytic, plasma, this multilayer system comprises SiO
2, TiO
2, Al
2O
3, ZnS, MgO and Bi
2O
3, in one embodiment, the gross thickness of this four-layer structure is about 2480 dusts, and the material on the top layer of this multilayer system is SiO
2, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.46.
United States Patent (USP) U.S.5,216,542 disclose a kind of five layers of coating, and it has high anti-reflection effect, and it is 1nm and the mucous layer that is made of Ni, Cr or NiCr that this multilayer system comprises a layer thickness, and all the other four layers by SnO
2, ZrO
2, ZnO, Ta
2O
5, NiO, CrO
2, TiO
2, Sb
2O
3, In
2O
3, Al
2O
3, SiO
2, TiN and ZrNn constitute, in one embodiment, the gross thickness of this five-layer structure is about 2337 dusts, the penetrance of the visible light of this five layer system is lower than 30%, the material on the top layer of this multilayer system is SiO
2, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.46.
United States Patent (USP) U.S.5,541,770 disclose a kind of antireflecting coating of optical attenuation with conductive layer, it is four to five layers a multilayer system, comprised metal with light absorption high index of refraction, for example Cr, Mo and W or the like are taken as the light effect film of this multilayer system, and other three to four layers are TiO
2, ITO, Al
2O
3, SiO
2And TiN, except a metal level is used to be used as the light effect film of this multilayer system, the main matter of this multilayer system is oxide and nitride, in one embodiment, the gross thickness of this five-layer structure is about 1495 dusts, and the penetrance of the visible light of this multilayer system is lower than 60%, the material on the top layer of this multilayer system is SiO, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.46.
United States Patent (USP) U.S.5,362,552 disclose a kind of six layers of antireflecting coating with three layers of conducting metal oxide, and this multilayer system comprises SiO
2, ITO, Nb
2O
5And Ta
2O
5, this coating comprises that a gross thickness reaches the conducting metal oxide of wavelength of visible light, in one embodiment, the material and the thickness of two main layers of these six layers of structures are respectively SiO
2, 854 dusts and ITO, 1975 dusts, the material on the top layer of this multilayer system is SiO
2, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.46.
United States Patent (USP) U.S.5,579,162 disclose a kind of four layers of antireflecting coating that are used in temperature-sensitive substrate (for example plastics), wherein one deck is the metal oxide of dc reactive sputtering, it can be arranged on the substrate apace, and can not transmit a large amount of heats to this substrate, this multilayer system comprises SnO
2, SiO
2And ITO, in one embodiment, the material and the thickness of two main layers of this four-layer structure are respectively SnO
2, 763 dusts and SiO
2, 940 dusts, the material on the top layer of this multilayer system is SiO
2, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.46.
United States Patent (USP) U.S.5,728,456 and U.S.5,783,049 disclose a kind of method of improvement, are used to arrange antireflecting coating in a plastic sheeting, and these multilayer film adopt a sputtering technology to be coated with a roller coating, and this multilayer system comprises ITO, SiO
2With a thin lubricating layer, it is a soluble fluoropolymer, and in one embodiment, the gross thickness of these six layers of structures is about 2630 dusts, and the material on the top layer of this multilayer system is SiO
2, it has a low-refraction, and when wavelength was 550nm, refractive index was 1.46.
More than the material of skin layer of disclosed optical multilayer system be SiO
2Or MgF
2, it has a low-refraction, and when wavelength was 550nm, refractive index was respectively 1.46 and 1.38.
The multilayer system of existing antireflective optical coating is all utilized a general rule, and this general rule has a low-refraction for the material on the top layer of this optical coating, for example SiO
2, refractive index is 1.46, or MgF
2, refractive index is 1.38.Yet, when this antireflecting coating is applied to display industry, for example have antistatic effect computer screen or be used for LCD or during the low-reflection glass of plasma display, in mass-produced process, can have some bottlenecks, its reason is that the conductive layer of this optical coating structure is by an insulation course (SiO for example
2Or MgF
2) institute fires and form.
The basic design rule of one antireflecting coating is, the ground floor that is arranged in a substrate surface is constituted (being denoted as H) by the material of tool high index of refraction, be that a material by the tool low-refraction constituted the second layer of (being denoted as L) thereafter, therefore, the rule of the sandwich construction of existing antireflecting coating is HLHL or HLHLHL, is ITO and the material of low-refraction (L) is SiO with the material of high index of refraction (H)
2Be example, this four-layer structure is respectively Glass/ITO/SiO
2/ ITO/SiO
2Because ITO is a transparent conductive materials, the electric conductivity of the coating of this sandwich construction is lower than every square metre 100 Ω, and, when this conductive coating is linked to ground, can be used for electromagnetic interference (EMI) and hinder frequently or static discharge.Yet problem is that the surface mass of this existing optical multilayer is SiO
2, and its thickness is 1000
This SiO
2Substance characteristics be high density, have inertia and have good insulation performance that in the process of display industry, electrically contact is by the SiO of outside in the traditional antireflecting coating of utilization
2This ITO layer of firing that layer is isolated is very difficult, in the ground connection process that makes this ITO layer of a Metal Contact, needs to use a ultrasonic welding process remove to break this SiO
2Layer well contacts to guarantee that the tin ball produces with this ITO layer, and this technology is the bottleneck of a large amount of production antireflecting coating.
On the other hand, because liquid tin and hyperacoustic cause that exposes energy to the open air, this ultrasonic welding process can produce fine pollutant.In addition, this ultrasonic welding process also can produce the contact impedance of perishability on each production line, and this is because ultrasonic welding process can't guarantee to break this insulation course and obtain a uniform contact impedance with the identical degree of depth uniformly.
Above-mentioned shortcoming can be reduced in the yield rate and the fiduciary level of the technology of existing anti-electromagnetic interference (EMI) of utilization and antireflecting coating.
Summary of the invention
Fundamental purpose of the present invention, provide a kind of tool low resistance function and be outermost antireflecting coating with transparent conductive layer, this coating comprises eight oxide skin(coating)s, and the material on its top layer is a transparent conductive layer and has one between 1.9 to 2.2 high index of refraction.
Another object of the present invention, provide a kind of tool low resistance function and be outermost antireflecting coating with transparent conductive layer, a large amount of technologies of producing this sull are reliably, and the antireflecting coating of this low resistance optical attenuation can apply to industry such as semiconductor, optical head, LCD, cathode-ray tube (CRT), building glass, touch sensor, screen wave filter, plastic wire plate coating.
Another object of the present invention provides a kind of tool low resistance function and is outermost antireflecting coating with transparent conductive layer, and the sandwich construction of this antireflecting coating is HL (HL)
6H comprises eight oxide skin(coating)s, and the material on the top layer of this coating is a transparent conductive layer and has one between 1.9 to 2.2 high index of refraction.
Another object of the present invention, provide a kind of tool low resistance function and be outermost antireflecting coating with transparent conductive layer, the material on the top layer of this antireflecting coating is a transparent surface conduction layer, the light reflectivity of this transparent surface conduction layer is lower than 0.5%, the impedance of this antireflecting coating is between every square metre 0.5 Ω and 0.7 Ω, and its penetrance is 55% to 70%.
Because there is the favorable conductive characteristic on this top layer, thereby this tool low resistance function and be that outermost antireflecting coating can reduce the required working load of ground connection technology with transparent conductive layer, and increasing yield rate and the fiduciary level of producing in batches, it can apply on the glass substrate or plastic base of LCD or plasma display.
In one embodiment, this tool low resistance function and be that outermost antireflecting coating includes 15 layers with transparent conductive layer, ground floor, the second layer, the 3rd layer ... with the 15 layer be arranged on the substrate in regular turn, each layer will be described with physical thickness or optical thickness, optical thickness is the mathematical product of layer thickness and refractive index, in the present invention, this design wavelength is 520nm.
Ground floor (or being called superficial layer) is made of transparent electric conductive oxidation material, this oxide is SnO:Sb, and it only absorbs visible light seldom, when wavelength is 520nm, the refractive index of this superficial layer is between 1.9 to 2.2, and physical thickness is that 20nm is to 40nm.
The second layer is a thin metal layer, and this metal level is made of silver, and it only absorbs visible light seldom, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.
The 3rd layer is made of oxide, and this oxide is SnO:Sb, and it only absorbs visible light seldom, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.
The 4th layer is a thin metal layer, and this metal level is made of silver, and it only absorbs visible light seldom, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.
The 8th layer is a thin metal layer, and this metal level is made of silver, and it only absorbs visible light seldom, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.
The 9th layer is made of oxide, and this oxide is SnO:Sb, and it only absorbs visible light seldom, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.
The tenth layer is a thin metal layer, and this metal level is made of silver, and it only absorbs visible light seldom, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.
Eleventh floor is made of oxide, and this oxide is SnO:Sb, and it only absorbs visible light seldom, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.
The 13 layer is made of oxide, and this oxide is SnO:Sb, and it only absorbs visible light seldom, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.
The 14 layer is a thin metal layer, and this metal level is made of silver, and it only absorbs a spot of visible light, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.
The 15 layer (or claiming innermost layer) is made of oxide, and this oxide is TiO
2, it does not absorb visible light, and when wavelength was 520nm, the refractive index of this layer was between 2.2 to 2.4, and physical thickness is that 20nm is to 40nm.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the synoptic diagram of outermost antireflecting coating for tool low resistance function of the present invention with transparent conductive layer;
Fig. 2 is the curve map of the wavelength contrast reflectivity of outermost antireflecting coating for tool low resistance function of the present invention with transparent conductive layer.
Wherein, Reference numeral:
The 1-ground floor
The 2-second layer
The 3rd layer of 3-
The 4th layer of 4-
The 5-layer 5
The 6-layer 6
The 7-layer 7
The 8th layer of 8-
The 9th layer of 9-
The tenth layer of 10-
The 11-eleventh floor
The 12-Floor 12
The 13 layer of 13-
The 14 layer of 14-
The 15 layer of 15-
The 16-front surface
The 17-substrate
The direction that 18-watches
Embodiment
The present invention is a kind of antireflecting coating of 15 layers based on oxide, and each layer will be that the physical thickness or the optical thickness of unit described in order to nm, and this design wavelength of visible light is 520nm.
As shown in Figure 1, substrate 17 is made of glass, plastics or other transparent material, the front surface 16 of this substrate 17 is this substrate 17 one sides in the face of the observer, the direction of watching is represented with label 18, the front surface 16 of the 15 layer of 15 this substrate 17 of contact, placing on the 15 layer 15 for the 14 layer 14, then is the 13 layer 13, Floor 12 12, eleventh floor 11, the tenth layer 10, the 9th layers 9, the 8th layers 8, layer 77, layer 66, layer 55, the 4th layer 4, the 3rd layers 3, the second layer 2 and ground floor 1 successively.Wherein ground floor 1 is called superficial layer or outermost layer again, constitutes the coating structure with 15 layers of the present invention thus.
Ground floor 1 (or being called superficial layer) is the SnO:Sb layer, and it only absorbs visible light seldom, and when wavelength was 520nm, the refractive index of this superficial layer was between 1.9 to 2.2, and physical thickness is that 20nm is to 40nm.The second layer 2 is silver layers, and it only absorbs visible light seldom, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.The 3rd layer 3 is SnO:Sb layers, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.The 4th layer 4 is silver layers, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.Layer 55 is SnO:Sb layers, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.Layer 66 is silver layers, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.Layer 77 is SnO:Sb layers, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.The 8th layer 8 is silver layers, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.The 9th layer 9 is SnO:Sb layers, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.The tenth layer 10 is silver layers, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.Eleventh floor 11 is SnO:Sb layers, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.Floor 12 12 is silver layers, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.The 13 layer 13 is SnO:Sb layers, and when wavelength was 520nm, the refractive index of this layer was between 1.9 to 2.2, and physical thickness is that 30nm is to 80nm.The 14 layer 14 is thin metal layers, and this metal level is made of silver, and it only absorbs visible light seldom, and when wavelength was 520nm, its refractive index was between 0.1 to 0.5, and physical thickness is that 8nm is to 12nm.The 15 layer 15 is TiO
2Layer, it does not absorb visible light, and when wavelength was 520nm, the refractive index of this layer was between 2.2 to 2.4, and physical thickness is that 20nm is to 40nm.
In a preferred embodiment, the thickness of this ground floor 1 is 35nm, the thickness of the second layer 2 is 10nm, the 3rd layer 3 thickness is 75nm, the 4th layer 4 thickness is 10nm, the thickness of layer 55 is 55nm, and the thickness of layer 66 is 10nm, and the thickness of layer 77 is 55nm, the 8th layer 8 thickness is 10nm, the 9th layer 9 thickness is 55nm, and the tenth layer 10 thickness is 10nm, and the thickness of eleventh floor 11 is 70nm, the thickness of Floor 12 12 is 10nm, the 13 layer 13 thickness is 70nm, and the 14 layer 14 thickness is 10nm, and the 15 layer 15 thickness is 33nm.
15 layers of the ground floors to the of coating structure of the present invention can be formed by coaxial or roller evaporation or the sputtering technology to the roller vacuum system.Under a general pressure 3m Torr (m=mini=0.001), under the environment that has sputter gas Ar and one little minute setting-out, direct current or pulse direct current magnetron sputtering method can be used to arrange SnO:Sb and form first and third, five, seven, nine, 11 and 13 layer.Under a general pressure 4m Torr, under the environment that has sputter gas Ar, direct current or pulse direct current magnetron sputtering method can be used to arrange silver and form second, four, six, eight, ten, 12 and 14 layer.Under a general pressure 2m Torr, there are mixed Ar and H
2Under the environment of O sputter gas, one exchanges that the reaction equation sputtering method can be used to arrange Ti and the TiO that forms the 15 layer 15
2The distance of this magnetron negative electrode and substrate is 15 centimeters, and uses a heating arrangement, the temperature of this substrate to be controlled between 100 to 300 degree.
Certainly, coating structure of the present invention is not limited to 15 layers, as long as meet HL (HL)
nThe design concept of H all can reach similar effect.
Fig. 2 is the curve map of the wavelength contrast reflectivity of outermost antireflecting coating for tool low resistance function of the present invention with transparent conductive layer, this reflectivity is recently represented with percentage, show the frequency spectrum of visible wavelength 400nm among the figure to 700nm, by among the figure as can be known, be lower than 0.5% at wavelength 460nm to the reflectivity between the 600nm, being better than existing is the coating structure of design concept with HLHL.
Owing to formed the ITO coating, the impedance of this conductive surface layer is between every square metre 0.5 Ω and 0.7 Ω, on a glass film or plastic sheeting, in the time of between corresponding visible wavelength range is from 400nm to 700nm, its reflecting spectrum is the zone of a smooth and broad, hence one can see that, and this coating is the high conductivity with excellent surface electric conductivity, the coating of optical attenuation anti-reflective.In addition, when using roller that roller vacuum layout method is arranged coating structure of the present invention, its production cost is low and be applicable to a large amount of productions.
On the other hand, coating structure of the present invention has high conductivity, thereby when it is applied to the manufacturing of plasma display, has the advantages such as optical attenuation effect of electromagnetic interference (EMI) barrier, the low reflection of optical look angle, high surface hardness resistance to scraping, appropriateness.For example, the surface impedance of coating structure of the present invention and has enough hardness and goes scratch resistance test by 105D military standard 105D MIL-C-48497 between every square metre 0.5 Ω and 0.7 Ω.
The present invention can reach following effect, and in existing coat system, the problem that the insulated silicon dioxide layer of transparent conductive layer is isolated has obtained solution.The invention provides surface mass and be 15 layers the coating structure of having of SnO:Sb, and its refractive index is between 1.9 to 2.2.
Because the superficial layer of this antireflecting coating has electric conductivity, thereby several simple mode can make coating of the present invention produce good electrically contact, and coating of the present invention can be applicable to the screen wave filter of plasma display.
In the application of screen wave filter, the grounded system making method that the meeting of traditional use ultrasonic welding process produces trickle tin point pollution thing will be substituted, the last process that antireflecting coating is assembled in the screen wave filter will be simplified, the inhomogeneous problem that electrically contacts that forms will be solved between isolated electroconductive ITO layer and soldering, to promote the yield rate of ground connection technology.In addition, this coating structure also can be applicable to the underlying coating layer of plasma display and liquid crystal display industry.
Coating structure of the present invention 15 layers constitutes its superficial layer by a conductive materials, and it can be used on the glass or plastic film substrate with Low ESR function simple and economically.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (15)
1. a tool low resistance function and be outermost antireflecting coating with transparent conductive layer is characterized in that, includes:
One substrate;
1 the 15 layer, be arranged on a front surface of this substrate, its oxide by a high index of refraction is constituted, and physical thickness is between between 20nm and 40nm;
1 the 14 layer, be arranged on the 15 layer, its metallics by a low-refraction is constituted, and physical thickness is between between 8nm and 12nm;
1 the 13 layer, be arranged on the 14 layer, its oxide by a high index of refraction is constituted, and physical thickness is between between 30nm and 80nm;
One Floor 12 is arranged on the 13 layer, and its metallics by a low-refraction is constituted, and physical thickness is between between 8nm and 12nm;
One eleventh floor is arranged on this Floor 12, and its oxide by a high index of refraction is constituted, and physical thickness is between between 30nm and 80nm;
1 the tenth layer, be arranged on this eleventh floor, its metallics by a low-refraction is constituted, and physical thickness is between between 8nm and 12nm;
One the 9th layer, be arranged on the tenth layer, its oxide by a high index of refraction is constituted, and physical thickness is between between 30nm and 80nm;
One the 8th layer, be arranged on the 9th layer, its metallics by a low-refraction is constituted, and physical thickness is between between 8nm and 12nm;
One layer 7 is arranged on the 8th layer, and its oxide by a high index of refraction is constituted, and physical thickness is between between 30nm and 80nm;
One layer 6 is arranged on this layer 7, and its metallics by a low-refraction is constituted, and physical thickness is between between 8nm and 12nm;
One layer 5 is arranged on this layer 6, and its oxide by a high index of refraction is constituted, and physical thickness is between between 30nm and 80nm;
One the 4th layer, be arranged on this layer 5, its metallics by a low-refraction is constituted, and physical thickness is between between 8nm and 12nm;
One the 3rd layer, be arranged on the 4th layer, its oxide by a high index of refraction is constituted, and physical thickness is between between 30nm and 80nm;
One second layer is arranged on the 3rd layer, and its metallics by a low-refraction is constituted, and physical thickness is between between 8nm and 12nm; And
One ground floor is arranged on this second layer, and its oxide by a high index of refraction is constituted, and physical thickness is between between 20nm and 40nm;
Wherein this ground floor, the 3rd layer, layer 5, layer 7, the 9th layer, eleventh floor and the 13 layer are made of SnO:Sb, this second layer, the 4th layer, layer 6, the 8th layer, the tenth layer, Floor 12 and the 14 layer are made of silver institute, and the 15 layer by TiO
2Constitute.
2. tool low resistance function as claimed in claim 1 and be outermost antireflecting coating with transparent conductive layer is characterized in that this substrate is a plastic sheeting.
3. tool low resistance function as claimed in claim 1 and be outermost antireflecting coating with transparent conductive layer is characterized in that this substrate is a glass.
4. tool low resistance function as claimed in claim 1 and be outermost antireflecting coating with transparent conductive layer, it is characterized in that, the refractive index of the oxide of this ground floor, the 3rd layer, layer 5, layer 7, the 9th layer, eleventh floor and the 13 layer is between 1.9 and 2.2, the refractive index of the metallics of this second layer, the 4th layer, layer 6, the 8th layer, the tenth layer, Floor 12 and the 14 layer is between 0.1 and 0.5, and the refractive index of the 15 layer oxide is between 2.2 and 2.4.
5. tool low resistance function as claimed in claim 1 and be outermost antireflecting coating with transparent conductive layer, it is characterized in that, the oxide of this ground floor, the 3rd layer, layer 5, layer 7, the 9th layer, eleventh floor and the 13 layer is formed by direct current or pulse direct current magnetron sputtering method, the metallics of this second layer, the 4th layer, layer 6, the 8th layer, the tenth layer, Floor 12 and the 14 layer is formed by direct current or pulse direct current magnetron sputtering method, and the 15 layer oxide is formed by exchanging the reaction equation sputtering method.
6. tool low resistance function as claimed in claim 1 and be outermost antireflecting coating with transparent conductive layer is characterized in that, 15 layers of this ground floors to the are formed by coaxial or roller evaporation or the sputtering technology to the roller vacuum system.
7. tool low resistance function as claimed in claim 1 and be outermost antireflecting coating with transparent conductive layer is characterized in that this coating is the underlying coating layer of plasma display or LCD.
8. a tool low resistance function and be outermost antireflecting coating with transparent conductive layer is characterized in that, includes:
One substrate;
One layer 5 is constituted and is arranged on this substrate by the oxide of a high index of refraction;
A plurality of the 4th layer, constituted by the metallics of a low-refraction;
A plurality of the 3rd layer, constituted by the oxide of a high index of refraction;
One second layer is made of the metallics of a low-refraction;
One ground floor is made of the oxide of a high index of refraction;
Wherein, these a plurality of the 4th layer and these a plurality of the 3rd series of strata interleaving stacks, and be arranged on this layer 5, then be this second layer and this ground floor in regular turn, this ground floor and this a plurality of the 3rd layer be made of SnO:Sb, and this second layer and this are made of silver-colored for a plurality of the 4th layer, and this layer 5 is by TiO
2Constitute.
9. tool low resistance function as claimed in claim 8 and be outermost antireflecting coating with transparent conductive layer, it is characterized in that, the physical thickness of this layer 5 is between between 20nm and 40nm, the 4th layer physical thickness is between between 8nm and 12nm, the 3rd layer physical thickness is between between 30nm and 80nm, the physical thickness of this second layer is between between 8nm and 12nm, and the physical thickness of this ground floor is between between 20nm and 40nm.
10. tool low resistance function as claimed in claim 8 and be outermost antireflecting coating with transparent conductive layer is characterized in that this substrate is a plastic sheeting.
11. tool low resistance function as claimed in claim 8 and be outermost antireflecting coating with transparent conductive layer is characterized in that this substrate is a glass.
12. tool low resistance function as claimed in claim 8 and be outermost antireflecting coating with transparent conductive layer, it is characterized in that, the refractive index of this ground floor and this a plurality of the 3rd layer oxide is between 1.9 and 2.2, the refractive index of this second layer and this a plurality of the 4th layer metallics is between 0.1 and 0.5, and the refractive index of the oxide of this layer 5 is between 2.2 and 2.4.
13. tool low resistance function as claimed in claim 8 and be outermost antireflecting coating with transparent conductive layer, it is characterized in that, this ground floor and this a plurality of the 3rd layer oxide are formed by direct current or pulse direct current magnetron sputtering method, this second layer and this a plurality of the 4th layer metallics are formed by direct current or pulse direct current magnetron sputtering method, and the oxide of this layer 5 is formed by exchanging the reaction equation sputtering method.
14. tool low resistance function as claimed in claim 8 and be outermost antireflecting coating with transparent conductive layer is characterized in that, this ground floor to layer 5 is formed by coaxial or roller evaporation or the sputtering technology to the roller vacuum system.
15. tool low resistance function as claimed in claim 8 and be outermost antireflecting coating with transparent conductive layer is characterized in that this coating is the underlying coating layer of plasma display or LCD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100873807A CN101281259A (en) | 2007-04-03 | 2007-04-03 | Anti-reflective coating having low resistance function with penetrating conductive layer as outmost layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100873807A CN101281259A (en) | 2007-04-03 | 2007-04-03 | Anti-reflective coating having low resistance function with penetrating conductive layer as outmost layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101281259A true CN101281259A (en) | 2008-10-08 |
Family
ID=40013810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100873807A Pending CN101281259A (en) | 2007-04-03 | 2007-04-03 | Anti-reflective coating having low resistance function with penetrating conductive layer as outmost layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101281259A (en) |
-
2007
- 2007-04-03 CN CNA2007100873807A patent/CN101281259A/en active Pending
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Open date: 20081008 |