CN101276797A - Electric optical device - Google Patents
Electric optical device Download PDFInfo
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- CN101276797A CN101276797A CNA2008100885442A CN200810088544A CN101276797A CN 101276797 A CN101276797 A CN 101276797A CN A2008100885442 A CNA2008100885442 A CN A2008100885442A CN 200810088544 A CN200810088544 A CN 200810088544A CN 101276797 A CN101276797 A CN 101276797A
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- 230000003287 optical effect Effects 0.000 title claims description 46
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000009826 distribution Methods 0.000 claims description 224
- 229910052750 molybdenum Inorganic materials 0.000 claims description 184
- 239000011733 molybdenum Substances 0.000 claims description 184
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 183
- 238000000576 coating method Methods 0.000 claims description 153
- 239000011248 coating agent Substances 0.000 claims description 150
- 230000004888 barrier function Effects 0.000 claims description 135
- 238000005530 etching Methods 0.000 claims description 111
- 230000015572 biosynthetic process Effects 0.000 claims description 92
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 16
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical group [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 13
- 230000001174 ascending effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 185
- 239000010936 titanium Substances 0.000 description 180
- 235000016768 molybdenum Nutrition 0.000 description 179
- 229910052719 titanium Inorganic materials 0.000 description 177
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 175
- 238000005516 engineering process Methods 0.000 description 70
- 229910052782 aluminium Inorganic materials 0.000 description 65
- 239000004411 aluminium Substances 0.000 description 65
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 62
- 238000000034 method Methods 0.000 description 56
- 238000000059 patterning Methods 0.000 description 53
- 238000001312 dry etching Methods 0.000 description 48
- 239000007789 gas Substances 0.000 description 38
- 239000011521 glass Substances 0.000 description 37
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 36
- 238000001259 photo etching Methods 0.000 description 34
- 238000010586 diagram Methods 0.000 description 31
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 27
- 239000004973 liquid crystal related substance Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 22
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 18
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 18
- 229910020776 SixNy Inorganic materials 0.000 description 18
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 18
- 229910017604 nitric acid Inorganic materials 0.000 description 18
- 239000012212 insulator Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 239000007788 liquid Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 13
- 239000000460 chlorine Substances 0.000 description 13
- 229910052801 chlorine Inorganic materials 0.000 description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- 229910052731 fluorine Inorganic materials 0.000 description 12
- 239000011737 fluorine Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 11
- 230000005764 inhibitory process Effects 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000005406 washing Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 6
- 235000006408 oxalic acid Nutrition 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- GDXTWKJNMJAERW-UHFFFAOYSA-J molybdenum(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Mo+4] GDXTWKJNMJAERW-UHFFFAOYSA-J 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Abstract
This invention discloses a substrate loading bench for preventing breakage of lifter pin disposed on loading bench consisting of plural laminated plates, and breakage of electrode. The substrate loading bench comprises: lifter pin (242), in manner of ascending and descending freely, disposed in bayonet through hole (214) which is in throughout configuration in uppermost electrode plate (210); and lift guide body (300) for guiding ascending and descending of the lifter pin (242), which is arranged to penetrate through hole (226) on temperature regulation plate (220) laminated on lower side of the electrode plate (210), and restricted to perform no horizontal movement with respect to the electrode plate (210) via positioning pin (350).
Description
Technical field
The present invention relates to electric optical device, particularly relate to possess the pixel portions that is disposed at central portion, and in order to the electric optical device of portion of terminal that other semiconductor circuit or other distribution substrate are installed at periphery.
Background technology
In the electric optical device as liquid crystal indicator, the pixel portions that will show is disposed at central portion, and at the circuit of its periphery configuration in order to the driving pixel portions.At the circuit that drives is situation fairly large or comparatively high speed etc.; and must use the semiconductor circuit that disposes other semiconductor circuit or other distribution substrate the time; periphery at electric optical device is provided with portion of terminal, and other semiconductor circuit or other distribution substrate are installed.
So, when must pixel portions be set at central portion, when periphery is provided with portion of terminal, be preferably in same step and form pixel portions and portion of terminal.
For example disclosing in patent document 1 has a kind ofly in display unit etc., is applicable to COG (Chip On Glass: the glass flip chip encapsulation) the formation method of the portion of terminal of technology.At this, in the same step of the formation molybdenum gate electrode of pixel portions, also form the molybdenum distribution in portion of terminal, in the same step of the data wire that forms pixel portions, also form and connect distribution in portion of terminal.Afterwards, forming diaphragm and planarization layer comprehensively, then, in pixel portions, removing in the same step of the planarization layer on the data wire, the planarization layer than the terminal part more lateral of data wire in the portion of terminal is being removed.Afterwards, in pixel portions, form in the same step of contact hole, also diaphragm is relatively widely removed in portion of terminal at diaphragm.Then in pixel portions, on planarization layer, form the nesa coating that is connected with described contact hole and as pixel electrode,, on the connection distribution, form nesa coating, suitable COG technology thereon in portion of terminal.At this, data wire and connection distribution use the stacked structure of molybdenum/aluminium/molybdenum or the stacked structure of titanium/aluminium/titanium, and diaphragm uses SixNy (silicon nitride), and planarization layer uses acrylic resin, and nesa coating uses tin indium oxide (ITO) or indium zinc oxide (IZO).Portion of terminal is also used ITO or IZO, for the manufacturing step of the display unit till the installation that is formed up to COG of portion of terminal, can suppress the formation of the oxidation overlay film on the generation of portion of terminal corrosion and portion of terminal surface, excellent electrical property in the time of can obtaining the COG installation connects, and guarantees the reliability of products after COG installs.
Patent document 1: TOHKEMY 2006-309028 communique
Summary of the invention
(inventing the problem of desired solution)
As mentioned above, in patent document 1, the stacked structure and the nesa coating of the stacked structure of employed molybdenum distribution, molybdenum/aluminium/molybdenum or titanium/aluminium/titanium in the formation of pixel portions also are respectively applied for the formation of portion of terminal.
As being connected wiring layer, both respectively have pluses and minuses in this narration molybdenum system and titanium system.That is, in molybdenum system, carry out Wet-type etching easily, and be oxide-film or hydroxide film, and removed with water etc. easily by the formed skin covering of the surface of environmental gas, but opposite, be difficult for carrying out dry-etching, therefore the degree that becomes more meticulous limits to some extent.On the other hand, titanium system can carry out dry-etching and be of value to and becoming more meticulous, but oxidation easily when for example forming tin indium oxide thereon, then can produce oxide-film etc. owing to it form environmental gas, and interface resistance is risen.
In addition; the progress that becomes more meticulous along with distribution and portion of terminal; though diaphragm as patent document 1 described SixNy; can be the shape that the dry-etching of gas forms expectation also by using fluorine; but the fluorine-containing reactive ingredients of this moment is formed at the surface that connects distribution as surface resultant.Connecting distribution is molybdenum when being, can these surface resultant and molybdenum hydroxide film together be removed, but when titanium is, only be difficult for only being removed by washing by the cleaning of water etc.
So,, still use titanium system to connect distribution though be preferably for becoming more meticulous of distribution and portion of terminal, as above-mentioned, the connection distribution of portion of terminal and the increase of the interface resistance between the tin indium oxide, and be difficult to remove surface resultant, be still the problem that needs solution.
The object of the present invention is to provide a kind of electric optical device and electric optical device manufacture method, can suppress increase along with the interface resistance that formation caused of nesa coating.In addition, other purpose is to provide a kind of electric optical device and electric optical device manufacture method, can be easily be that the surface resultant that gas is produced when carrying out dry-etching is removed with using fluorine, and can suppress the increase of interface resistance.Following means have contribution at least one item in these purposes.
(in order to solve the means of problem)
Electric optical device of the present invention possesses: pixel portions is disposed at central portion; And portion of terminal, in order to other semiconductor circuit or other distribution substrate to be installed at periphery; And aforementioned portion of terminal has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn: terminal has the superiors of titaniferous with connecting distribution; The terminal intermediate coat is made of the electric conducting material that can carry out Wet-type etching; And terminal nesa coating.
The electric optical device of above-mentioned formation in the stacked structure of portion of terminal, disposes intermediate coat between the layer of nesa coating and titaniferous.Thus, than directly on the layer of titaniferous, forming nesa coating, more can suppress the formation of oxide-film and the increase of inhibition interface resistance.
In addition; for example when intermediate coat forms the diaphragm of back formation SixNy; owing to is that the formed surface resultant of dry-etching also is formed on the intermediate coat with fluorine, the therefore Wet-type etching by the intermediate coat surface easily, or because of the difference of situation clean removal the by water etc.
In addition, in electric optical device of the present invention, be preferably aforementioned pixel portions and have the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn: pixel is with connecting distribution, to form with connecting the identical step of distribution with the aforementioned terminal of formation; The pixel intermediate coat is to form with the identical step of intermediate coat with the aforementioned terminal of formation; And the pixel nesa coating, to form with the identical step of nesa coating with the aforementioned terminal of formation.
So, constitute each layer of the stacked structure of pixel portions, form with the step identical, therefore can make to form step and reach commonization, need not carry out special step and can form the stacked structure of portion of terminal and the stacked structure of pixel portions simultaneously with each layer of the stacked structure that form to constitute portion of terminal.
In addition, electric optical device of the present invention possesses: pixel portions is disposed at central portion; And portion of terminal, in order to other semiconductor circuit or other distribution substrate to be installed at periphery; And portion of terminal has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn: terminal has the superiors of titaniferous with connecting distribution; Terminal is with protecting insulating barrier; The terminal intermediate coat is to be exposed in order to covering to be formed on the aforementioned terminal aforementioned terminal film that connect distribution of the terminal of protection insulating barrier with peristome, and is made of the electric conducting material that can carry out Wet-type etching; And terminal nesa coating.
According to above-mentioned formation, the layer that the protection insulating barrier is formed at titaniferous is on the connection distribution of the superiors.That is, structure extremely so far is identical with the structure of background technology.At this moment, in the stacked structure of portion of terminal, between the layer of nesa coating and titaniferous, also dispose intermediate coat.Thus, than directly on the layer of titaniferous, forming nesa coating, more can suppress the formation of oxide-film and the increase of inhibition interface resistance.
For example, before forming the protection insulating barrier,, may need to use this moment such as continuous film forming apparatus etc. though also can be that the connection distribution of the superiors forms the back and continues to form intermediate coat at layer with titaniferous.If according to above-mentioned formation; can form down array structure: use layer connection distribution and the protection insulating barrier as the superiors of conventional device formation with titaniferous; and after form nesa coating before, suppress the portion of terminal of interface resistance in expectation, add to appending property intermediate coat.Thus, need not use expensive continuous film forming apparatus etc., can suppress the increase of the interface resistance of portion of terminal yet.In addition, can form the structure that adds intermediate coat on whole appending property ground of a plurality of terminals that constitute portion of terminal, or only set the appending property of terminal of expectation inhibition interface resistance add the structure of intermediate coat.
In addition, be preferably in electric optical device of the present invention, aforementioned pixel portions has the following stacked structure that is piled up following member by lower layer side to upper layer side in regular turn: pixel is with connecting distribution, to form with connecting the identical step of distribution with the aforementioned terminal of formation; Pixel is with the protection insulating barrier, to form with the identical step of protection insulating barrier with the aforementioned terminal of formation; And the pixel nesa coating, be formed on the aforementioned pixel aforementioned pixel film that connect distribution of the pixel of protection insulating barrier for being exposed to peristome in order to covering, and to form with the identical step of nesa coating with the aforementioned terminal of formation; And aforementioned terminal is removed in pixel portions with intermediate coat.
According to above-mentioned formation, can form the structure that comprises intermediate coat in portion of terminal, form the structure that does not contain intermediate coat in pixel portions.Therefore, can make the structure formation of pixel portions identical, and can suppress the increase of interface resistance simultaneously in portion of terminal with background technology.
In addition, in electric optical device of the present invention, aforementioned intermediate coat expectation is molybdenum.Molybdenum ties up in the electric optical device and is widely used, and is the electric conducting material that can carry out Wet-type etching.In addition, its surface is removed by washing only easily.Therefore, according to above-mentioned formation, can use general material membrane to suppress the increase of interface resistance.
In addition, in electric optical device of the present invention, aforementioned intermediate coat expectation is indium zinc oxide (IZO) or tin indium oxide (ITO).IZO and ITO are the electric conducting material of the carried out Wet-type etching that is widely used in electric optical device.In addition, can be by its surface be carried out Wet-type etching and is removed surface attachments easily.Therefore, according to above-mentioned formation, can use general material membrane to suppress the increase of interface resistance.
Electric optical device of the present invention possesses: pixel portions is configured in central portion; And portion of terminal, in order to other semiconductor circuit or other distribution substrate to be installed at periphery; And aforementioned pixel portions has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn: pixel has the superiors of titaniferous with connecting distribution; The pixel intermediate coat is made of the electric conducting material that can carry out Wet-type etching; And pixel nesa coating.
The electric optical device of above-mentioned formation between the layer of nesa coating and titaniferous, disposes by the pixel intermediate coat that electric conducting material constituted that can carry out Wet-type etching in the stacked structure of pixel portions.Thus, than directly on the layer of titaniferous, forming nesa coating, more can suppress the formation of oxide-film and the increase of inhibition interface resistance.
In addition, in electric optical device of the present invention, be preferably and contain the pixel protection insulating barrier that is formed between aforementioned pixel usefulness intermediate coat and the aforementioned pixel usefulness nesa coating; Aforementioned portion of terminal has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn: terminal is with connecting distribution, to form with connecting the identical step of distribution with the aforementioned pixel of formation; The terminal intermediate coat is to form with the identical step of intermediate coat with the aforementioned pixel of formation; Terminal is with the protection insulating barrier, to form with the identical step of protection insulating barrier with the aforementioned pixel of formation; And terminal nesa coating; be to connect the terminal nesa coating of aforementioned terminal with the terminal usefulness peristome of protecting insulating barrier and aforementioned terminal to form with intermediate coat in order to cover, and to form with the identical step of nesa coating with the aforementioned pixel of formation.
The electric optical device of above-mentioned formation is in the stacked structure of portion of terminal; after between the layer of nesa coating and titaniferous, piling up intermediate coat; pass protection insulating barrier and intermediate coat and be formed with the terminal peristome, and cover this terminal and form the terminal nesa coating with peristome.When this terminal is used the formation of peristome, remove the part of the peristome of intermediate coat.That is, by fluorine being dry-etching when making the protection insulating barrier form opening, be formed at the surface resultant on the intermediate coat, also the removal with intermediate coat is removed simultaneously.So, in the lower portion of terminal, will use fluorine easily is that the surface resultant that gas is produced when carrying out dry-etching is removed, and can suppress the increase of interface resistance in interface resistance expectation.
In addition, in electric optical device of the present invention, aforementioned intermediate coat expectation is molybdenum.Molybdenum is the electric conducting material of the carried out Wet-type etching that is widely used in electric optical device.Therefore, according to above-mentioned formation, can use general material membrane and suppress the increase of interface resistance.
In addition, in electric optical device of the present invention, aforementioned intermediate coat expectation is indium zinc oxide (IZO) or tin indium oxide (ITO).IZO and ITO are the electric conducting material of the carried out Wet-type etching that is widely used in electric optical device.Therefore, according to above-mentioned formation, can use general material membrane and suppress the increase of interface resistance.
Description of drawings
Fig. 1 is the plane graph that shows the liquid crystal indicator of embodiments of the present invention.
Fig. 2 be show in embodiments of the present invention pixel portions and the diagram of portion of terminal.
Fig. 3 is the sectional structure chart that shows the liquid crystal indicator of embodiments of the present invention.
Fig. 4 shows in embodiments of the present invention, the partial graph after the stacked structure of pixel portions and portion of terminal is amplified.
Fig. 5 shows in embodiments of the present invention, the flow chart of the first half of the manufacturing step of following substrate.
Fig. 6 shows in embodiments of the present invention, the flow chart of the latter half of the manufacturing step of following substrate.
Fig. 7 is the section of structure of apperance of S32 step of the flow chart of displayed map 5.
Fig. 8 is the section of structure of apperance of S34 step of the flow chart of displayed map 6.
Fig. 9 is the section of structure of apperance of S36 step of the flow chart of displayed map 6.
Figure 10 is the section of structure of apperance midway of S42 step of the flow chart of displayed map 6.
Figure 11 is the section of structure of the apperance of the S42 step of the flow chart of displayed map 6 when finishing.
Figure 12 is the section of structure of apperance of S46 step of the flow chart of displayed map 6.
Figure 13 A to Figure 13 C is the diagram that background technology is described for the effect of the molybdenum film that embodiments of the present invention are described.
Figure 14 A to Figure 14 D is the diagram in order to the effect of the molybdenum film of explanation embodiments of the present invention.
Figure 15 is the section of structure that shows other execution mode.
Figure 16 shows in other embodiments, the flow chart of the step of the latter half of the manufacturing of following substrate.
Figure 17 is the section of structure of apperance of S50 step that shows the flow chart of Figure 16.
Figure 18 is the section of structure of apperance midway of S56 step that shows the flow chart of Figure 16.
Figure 19 is the section of structure of the apperance after the S56 step of the flow chart of demonstration Figure 16 finishes.
Figure 20 is the section of structure of apperance of S58 step that shows the flow chart of Figure 16.
Figure 21 is the section of structure of apperance of S60 step that shows the flow chart of Figure 16.
Figure 22 is the section of structure of apperance of S64 step that shows the flow chart of Figure 16.
Figure 23 shows in other embodiments, the flow chart of the latter half of the manufacturing step of following substrate.
Figure 24 A to Figure 24 D is the diagram in order to the effect of indium zinc oxide (IZO) film that other execution mode is described.
Figure 25 is the section of structure that shows other execution mode.
Figure 26 shows in other embodiments, the flow chart of the step of the latter half of the manufacturing of following substrate.
Figure 27 shows in other embodiments, the partial graph after the stacked structure of pixel portions and portion of terminal is amplified.
Figure 28 shows in other embodiments, the flow chart of the latter half of the manufacturing step of following substrate.
Figure 29 is the section of structure of apperance of S32 step of the flow chart of displayed map 5.
Figure 30 is the section of structure of apperance of S70 step that shows the flow chart of Figure 28.
Figure 31 is the section of structure of apperance of S72 step that shows the flow chart of Figure 28.
Figure 32 is the section of structure of apperance midway of S78 step that shows the flow chart of Figure 28.
Figure 33 is the section of structure of the apperance after the S78 step of the flow chart of demonstration Figure 28 finishes.
Figure 34 is the section of structure of apperance of S80 step that shows the flow chart of Figure 28.
Figure 35 is the section of structure of apperance of S82 step that shows the flow chart of Figure 28.
Figure 36 A and Figure 36 B are the diagrams that background technology is described for the effect of the molybdenum film that other execution mode is described.
Figure 37 A to Figure 37 C is the diagram in order to the effect of the molybdenum film that other execution mode is described.
Figure 38 shows in other embodiments, the flow chart of the latter half of the manufacturing step of following substrate.
Figure 39 A to Figure 39 C is the diagram in order to the effect of indium zinc oxide (IZO) film that other execution mode is described.
Symbol description
12 times substrates of 10 liquid crystal indicators
16 conductor circuits
18 FPC (Flexible Printed Circuitboard flexible printed circuit board)
20 portion of terminal, 22 gate electrodes
24 pixels are with connecting distribution 25 data wires
26 switch modules, 28 pixel nesa coatings
30 liquid crystal molecules, 40 upper glasses
42 colored filters, 44 counter electrodes
50 lower-glass, 52 resilient coatings
54 semiconductor layers, 56 gate insulators
60 interlayer dielectrics, 62 protection insulating barriers
64 planarization layers 70 connect wiring layer
72 molybdenums (Mo) film, 90,94,190,194 titaniums (Ti)
92,192 aluminium (Al), 96 pixels molybdenum film
121 wiring leads, 122 bottom distributions
124 terminals are with connecting distribution 128 terminal nesa coatings
196,197 terminals molybdenum film
198,199 terminals indium zinc oxide (IZO) film
200,202,204,206,208,210,212 interface states
Embodiment
Below use diagram to describe embodiments of the present invention in detail.Below be the example of explanation liquid crystal indicator, but also can be the electric optical device beyond the liquid crystal indicator as electric optical device.For example can be electro photo-luminescent apparatus, plasma display system, electrophoretic display apparatus, reach the device that uses the electronics emitting module.
In addition, below be that explanation uses COG (Chip On Glass: glass flip chip encapsulates) technology that the semiconductor circuit of other chip is disposed at portion of terminal, or (Outer LeadBonding: outer pin overlap joint) technology is with FPC (Flexible Printed Circuitboard: flexible printed circuit board) wait other distribution substrate to be connected in portion of terminal to use OLB, as liquid crystal indicator, use the low temperature polycrystalline silicon technology on glass substrate, to form scan line drive circuit, signal-line driving circuit etc. to form but also can be certainly.
In addition, below be the formation of explanation penetrating type full-color matrix type, but this is an example to the explanation of the common use of the formation step of each key element of pixel portions and portion of terminal as liquid crystal indicator.Therefore, except directly the material of the gate electrode of pixel portions, data wire, pixel electrode being used in the stacked structure of portion of terminal, about other structure etc., specification that also can corresponding electric optical device and suitably change.
Embodiment one
Fig. 1 is the diagram that shows the formation of liquid crystal indicator 10.Described liquid crystal indicator 10 is the full-color matrix type of penetrating type, have down between substrate 12 and the last substrate 13 clamping the structure of liquid crystal molecule 30 is arranged, around pixel portions 14, have the portion of terminal 20 that constitutes by a plurality of terminal.In Fig. 1, in portion of terminal 20, express, connected and be disposed at down the semiconductor circuit 16 of other chip on the substrate 12 and the FPC18 of other distribution substrate of being connected with the OLB technology with the COG technology.
Fig. 2 is that a pixel is selected in demonstration from pixel portions 14, and selects a terminal from portion of terminal 20, and the diagram of its planar configuration is described.
The pixel of pixel portions 14 corresponds respectively to gate electrode 22 and is provided with the infall of data wire 25 for quadrature.In a pixel, be provided with a switch module 26, the source terminal of switch module 26 is connected in data wire 25 and the pile up distribution of pixel with molybdenum film 96, drain terminal with connecting distribution 24 and the pile up distribution of pixel with molybdenum film 96, and is connected in the pixel electrode as pixel usefulness nesa coating 28 via pixel.At this, pixel is constituted with same material with connecting distribution 24 and data wire 25, and forms in same step.The source terminal and the drain terminal of switch module 26 have interchangeability, also above-mentioned illustrated drain terminal can be called source terminal, and above-mentioned illustrated source terminal is called drain terminal.
The terminal of portion of terminal 20 comprises: the wiring lead 121 of being drawn from pixel portions 14; Be connected in the bottom distribution 122 of described wiring lead 121; The terminal that is connected in bottom distribution 122 is with connecting distribution 124; Terminal molybdenum film 196; And terminal constitutes with nesa coating 128.At this, as described later, wiring lead 121 and terminal are being constituted by identical materials with being connected distribution 24 and data wire 25 with the pixel of pixel portions 14 with connecting distribution 124, and form in same step with described distribution.In addition, bottom distribution 122 is constituted by identical materials with the gate electrode 22 with pixel portions 14, and forms in same step with this electrode.In addition, terminal, and forms in same step with this film being constituted by identical materials with molybdenum film 96 with pixel with molybdenum film 196.In addition, terminal, and forms in same step with this film being constituted by identical materials with nesa coating 28 with pixel with nesa coating 128.
Fig. 3 shows, in order to the formation of explanation liquid crystal indicator 10, the profile of the A-A line of Fig. 2.The profile corresponding to a pixel of pixel portions 14 is expressed in the left side of Fig. 3, and the profile corresponding to a terminal of portion of terminal 20 is expressed on the right side.As mentioned above, liquid crystal indicator 10 has the structure that between following substrate 12 and last substrate 13 clamping has liquid crystal molecule 30, and portion of terminal 20 is disposed on periphery that substrate 13 do not extend to, time substrate 12.
The structure of pixels illustrated portion 14 at first.In pixel portions 14, last substrate 13 disposes the colored filter (CF) 42 that possesses black matrix" (BM) on upper glass 40, and disposes counter electrode 44 thereon.Afterwards, when constituting liquid crystal indicator 10, with counter electrode 44 sides towards liquid crystal molecule 30, and relative with following substrate 12 to.In addition, about alignment film etc., in diagram, omitted.
Following substrate 12 disposes resilient coating 52 on lower-glass 50, and Stacket semiconductor layer 54, gate insulator 56, gate electrode 22, and interlayer dielectric 60 thereon.Afterwards,, make data wire 25 be connected in the source electrode of semiconductor layer 54, make pixel be connected in drain electrode with connecting distribution 24 via being formed at the contact hole of gate insulator 56 with interlayer dielectric 60.In addition, with being connected on the distribution 24, be formed with pixel with molybdenum film 96 in data wire 25 and pixel.Pile up protection insulating barrier 62 and planarization layer 64 then thereon again.In addition, via being formed at the opening of protection insulating barrier 62 with planarization layer 64, make pixel be connected in the pixel pixel molybdenum film 96 that connects on the distribution 24 with nesa coating 28, the part that is formed on the planarization layer 64 becomes pixel electrode.
The structure of portion of terminal 20 then is described.As mentioned above, because portion of terminal 20 is used COG technology, OLB technology, and connect the semiconductor circuit 16 of other chip and, therefore do not dispose upper glass 40 as other the FPC 18 of distribution substrate.That is, portion of terminal 20 only is the structure on the lower-glass 50.In portion of terminal 20, configuration resilient coating 52 on lower-glass 50, and pile up thereon gate insulator 56 is arranged, bottom distribution 122, and interlayer dielectric 60.Via the contact hole that is formed on interlayer dielectric 60, make terminal be connected in bottom distribution 122 afterwards with connecting distribution 124.Be formed with terminal on the distribution 124 with molybdenum film 196 at terminal with connecting, pile up protection insulating barrier 62 more thereon.In portion of terminal 20,, therefore in the portion of terminal 20 of Fig. 3, do not show because planarization layer 64 is removed comprehensively.Via the opening that is formed at protection insulating barrier 62, make terminal be connected in the terminal terminal molybdenum film 196 that connects on the distribution 124 afterwards with nesa coating 128.
Fig. 4 is the partial graph that shows after the pixel of pixel portions 14 amplified with the stacked structure of the peripheral part of connection distribution 124 with the terminal of peripheral part that connects distribution 24 and portion of terminal 20.Below, for Fig. 1 to Fig. 3 in identical element, additional prosign and detailed.In addition, below use the symbol of Fig. 1 to Fig. 3 to describe.In Fig. 4, be to omit the diagram that goes up substrate 13 and liquid crystal molecule 30, in following substrate 12, be the diagram of omitting lower-glass 50 and resilient coating 52.
In the left side of Fig. 4, the pixel that is remarked pixel portion 14 is with connecting distribution 24 and the part enlarged drawing of pixel with molybdenum film 96.Pixel is with connecting the distribution of distribution 24 for the drain electrode that is connected in switch module 26, and switch module 26 is formed at the semiconductor layer 54 on the resilient coating 52 that is configured in icon not.Pixel is connected in the semiconductor layer 54 that exposes with connecting distribution 24 by the contact hole that is formed on gate insulator 56 and interlayer dielectric 60, and piles up titanium (Ti) 90, aluminium (Al) 92, and the titanium 94 of the superiors and constituting by lower layer side in regular turn to upper layer side.Pixel is stacked in pixel with on the titanium 94 of the superiors that connect distribution 24 and dispose with molybdenum film 96.At this, be illustrated as interlayer dielectric 60 and directly be disposed at situation on the gate insulator 56, this is because in this zone, is removed at the gate electrode 22 of gate insulator 56 next step formation.At this, titanium 90,94 can be the layer of titaniferous, except Titanium, also can be titanium nitride (TiN) etc.Below with titaniferous the layer only describe as titanium.
Use on the molybdenum film 96 in pixel, pile up protection insulating barrier 62 and dispose, at described stacked insulating film, so that the mode that pixel is exposed with the part of molybdenum film 96 forms contact hole with planarization layer 64.The pixel that is exposed to described contact hole with covering disposes pixel with nesa coating 28 with the mode of molybdenum film 96.So, as illustrated in fig. 2, pixel is connected in the drain electrode of switch module 26 with nesa coating 28, and becomes the pixel electrode that is disposed on the planarization layer 64.
On the right side of Fig. 4, the terminal of expression portion of terminal 20 is with connecting distribution 124 and the part enlarged drawing of terminal with molybdenum film 196.Different with connecting distribution 24 with pixel, terminal is to be connected in to be configured in the not resilient coating 52 of icon and the distribution of the bottom distribution 122 on the gate insulator 56 with connecting distribution 124.In addition, as described later, bottom distribution 122 with the same step of the gate electrode 22 that forms pixel portions 14 in form.For example, when forming gate electrode 22 with the molybdenum film, bottom distribution 122 is formed with the molybdenum film.In portion of terminal 20, since dispose with gate electrode 22 same steps in the bottom distribution 122 that forms, therefore, interlayer dielectric 60 is different with the formation of pixel portions 14 on directly being disposed at gate insulator 56, and identical with gate electrode 22, be to pile up bottom distribution 122 and interlayer dielectric 60 in regular turn to upper layer side by lower layer side.
Terminal is connected in the bottom distribution 122 that exposes with connecting distribution 124 by the contact hole that is formed on interlayer dielectric 60, and piles up titanium 190, aluminium 192, and the titanium 194 of the superiors and constituting by lower layer side in regular turn to upper layer side.Terminal is stacked in terminal with on the titanium 194 of the superiors that connect distribution 124 and dispose with molybdenum film 196.
In portion of terminal 20,, therefore, do not dispose protection insulating barrier 62 on 196 at terminal with molybdenum, at described protection insulating barrier 62, so that the mode that terminal exposes with the part of molybdenum film 196 forms contact hole because planarization layer 64 removed comprehensively.The terminal that is exposed to described contact hole with covering disposes terminal with nesa coating 128 with the mode of molybdenum film 196.In portion of terminal 20, terminal has with nesa coating 128 and suppresses terminal with the function of molybdenum film 196 surface oxidations and the function that prevents the corrosion of portion of terminal.
So, in pixel portions 14, be formed with pixel with connecting distribution 24, pixel, in portion of terminal 20, be formed with terminal with connecting distribution 124, terminal with molybdenum film 196, terminal conductive stack film with nesa coating 128 with molybdenum film 96, pixel conductive stack film with nesa coating 28.At this, pixel forms in same step with connecting distribution 124 with connecting distribution 24 and terminal, and pixel forms in same step with molybdenum film 196 with molybdenum film 96 and terminal, and pixel forms in same step with nesa coating 128 with nesa coating 28 and terminal.In addition, pixel forms the stacked structure of titanium/aluminium/titanium with connecting distribution 24 and terminal with connection distribution 124, but also can be the stacked structure of titanium nitride (TiN)/aluminium/titanium nitride (TiN), or the stacked structure of titanium/aluminium-silicon alloys (Al-Si) etc.
Next illustrate in order to be formed at the step of Fig. 1 to structure illustrated in fig. 4.The flow chart of Fig. 5 and Fig. 6 is used in the explanation of step, and uses the structure chart of Fig. 7 to Figure 12 to carry out.In addition, use Figure 13 and Figure 14, the effect of using the molybdenum film is described.Below, for Fig. 1 to Fig. 4 in identical key element, additional prosign and detailed.In addition, below use the symbol of Fig. 1 to Fig. 4 to describe.
Fig. 5 is shown to the flow chart that the connection wiring layer that will have the stacked structure of titanium/aluminium/titanium gives the order till the step of film forming, and Fig. 6 is the flow chart of the sequence of steps after showing.These steps are the following manufacturing step of substrate 12, and via the manufacturing step of last substrate 13, and the step of following substrate 12 and last substrate 13 holding liquid crystal molecules etc., and produce liquid crystal indicator 10.
At Fig. 1 to the manufacturing of the following substrate 12 of liquid crystal indicator 10 illustrated in fig. 4, carry out continuously the final step of Fig. 5 titanium/aluminium/titanium film forming step, with the molybdenum film film forming step of the initial step of Fig. 6.That is, though carry out the continuous film forming of titanium/aluminium/titanium/molybdenum, owing to do not use the molybdenum film in the prior art, the therefore mode to compare easily will be the part of identical step with prior art at this, and set is put in order in the flow chart of Fig. 5.
Fig. 5 shows, begins to proceed to the flow chart of the every step till titanium/aluminium/titanium film forming step from lower-glass 50, and Fig. 7 shows, the pixel portions 14 of the state after finishing titanium/aluminium/titanium film forming step and the structure chart of the apperance of portion of terminal 20.In Fig. 7, the structure of left side display pixel portion 14, the right side shows the structure of portion of terminal 20.Also identical till Fig. 8 to Figure 12.
In Fig. 5, at first, resilient coating 52 is formed at comprehensive (S10) of lower-glass on lower-glass 50, and makes amorphous silicon (a-Si) layer (S12) formed thereon.At this, resilient coating 52 is SiO
2The stacked film of/SiN, thickness are 100 to 200nm, and the thickness of a-Si film approximately forms 30 to 50nm.In addition, these films are formed with plasma CVD method.Thus, on lower-glass 50, pile up a-Si/SiO is arranged
2The film of/SiN/Glass (glass substrate).
Then irradiating laser (laser annealing) carries out crystallization (S14) under the low temperature to amorphous silicon layer.Thus, make the amorphous silicon layer crystallization and obtain polysilicon layer.Then the polysilicon layer that is obtained is carried out patterning, (S16) in island district (semiconductor layer 54) that required part forms polysilicon.Form the impedance pattern by photoetching technique afterwards, when switch module 26 is the n channel TFT, (S18) at impurities (for example phosphorus) such as its regions and source.
Then, comprise described semiconductor layer 54, form by SiO comprehensively at substrate
2Monofilm or SixNy/SiO
2The gate insulator that stacked film constituted 56 (S20).
Thus, in pixel portions 14, form gate insulator 56 and cover semiconductor layer 54, semiconductor layer 54 is by being constituted at the formed polysilicons such as zone that form switch module 26 or electric capacity.On the other hand, in portion of terminal 20, remove semiconductor layer 54 and on resilient coating 52, form gate insulator 56.
Position above the channel region that is equivalent to semiconductor layer 54 on the gate insulator 56 forms gate electrode 22 (S22) with sputtering method then.At this, gate electrode 22 uses molybdenum (Mo) or tungsten-molybdenum alloy (MoW) etc. as material, and gives film forming with 200 to 300nm thickness.Described gate electrode 22 forms, in pixel portions 14, be configured to the part of common gate line of a plurality of pixels of row in the horizontal direction.In addition, though not shown, keep SC line that electric capacity uses also with the same manufacturing step of gate line in form, make to form to keep semiconductor layer 54 that electric capacity uses to be relative to the configuration and to form maintenance electric capacity across gate insulator 56 and SC line.Moreover when forming gate electrode 22 in pixel portions 14, in portion of terminal 20, bottom distribution 122 also forms in same manufacturing step.
After gate electrode 22, bottom distribution 122 form, in peripheral circuit, have in the situation of p channel TFT as switch module, (S24) at this regions and source impurity (for example boron).This can be by using photoetching technique, and to be formed at the impedance that needs beyond the doped region etc. as mask, carry out the ion doping of boron.At this moment, in portion of terminal 20, do not carry out any processing (yet not impurity).When switch module only uses the formation of n channel TFT, can omit the step of S24.
Then lower-glass 50 comprehensively, form by SiO by plasma CVD
2Monofilm or SiO
2The interlayer dielectric that stacked film constituted 60 (S26) of/SixNy.Thickness for example is 400 to 800nm.After forming this interlayer dielectric 60, by the activation annealing that heat treatment is carried out, make semiconductor layer 54 activation (S28) in the zone that is doped with impurity, make the charge carrier degree of freedom in these zones become abundant.
In the reason, form interlayer dielectric 60 herein, also form interlayer dielectric 60 in portion of terminal 20 in pixel portions 14.
Moreover, to source region and the drain region of interlayer dielectric 60,, form contact hole (S30) by photoetching technique and dry-etching or Wet-type etching with the semiconductor layer 54 of gate insulator 56.At this moment, for the interlayer dielectric 60 of bottom distribution 122 tops of portion of terminal 20, also to remove for more vast zone than pixel portions 14.It is bigger to remove the zone, and this is because the size of the corresponding terminal that is connected with COG technology or OLB technology makes the connection resistance of portion of terminal more reach low resistanceization.Therefore, in the step of S22, bottom distribution 122 is also with than more big sizes such as the width dimensions of the gate electrode 22 of pixel portions 14 and form pattern.
Then lower-glass 50 comprehensively, will be used for data wire (source electrode) 25 and give film forming (S32) with the connection wiring layer that pixel usefulness is connected distribution (drain electrode) 24.Fig. 7 shows the state that carries out this step, expresses at this, connects the apperance that wiring layer 70 spreads all over comprehensive film forming of pixel portions 14 and portion of terminal 20.Connecting wiring layer 70 is the stacked structure of titanium/aluminium/titanium, and undermost titanium is connected in semiconductor layer 54 in pixel portions 14, be connected in bottom distribution 122 in portion of terminal 20.Middle aluminium is the core of conductive wires, and disposing the structure of titanium in its lower floor respectively with the upper strata, and constitute connection wiring layer 70.As shown in Figure 7, connecting wiring layer 70 covers respectively and is formed on the contact hole on the semiconductor layer 54 and is formed on contact hole on the bottom distribution 122 and film forming.Connection wiring layer 70 is film forming with the stacked film (thickness 400 is to 800nm) of sputtering method formation titanium/aluminium/titanium.
As mentioned above, till the S32 of Fig. 5, be the step identical with background technology.Fig. 6 is the flow chart that is presented at its step afterwards.Fig. 8 to Figure 12 is the structure chart corresponding to each step.
The initial step of Fig. 6 is molybdenum film film forming step (S34).In fact this step carries out with the S32 step of Fig. 5 continuously for make the step of molybdenum film film forming in the comprehensive mode that spreads all over lower-glass 50.That is, the stacked film (thickness 500 is to 900nm) with the formed molybdenum/titanium of sputtering method/aluminium/titanium comes film forming.This film forming of four layers for example can be used one chip continuous sputtering film formation device, follows the S30 step, carries out the film forming of titanium layer film forming-aluminium lamination film forming-titanium layer film forming-molybdenum layer film forming in regular turn.Certainly, these films also can use the film formation device of different special uses to give film forming respectively.Fig. 8 is presented at the apperance that connects the comprehensive formation molybdenum film 72 on the wiring layer 70.
Then, pile up distribution (S36) by what photoetching technique and dry-etching formed molybdenum/titanium/aluminium/titanium.It is that dry etching gases carries out that dry-etching for example can use chlorine.Also can be after the molybdenum film being carried out patterning by Wet-type etching, being etching gas with chlorine again carries out patterning to the stacked film of titanium/aluminium/titanium.The Wet-type etching of molybdenum film can use the suitable etching solution that comprises phosphoric acid and nitric acid.This etching solution can use the so-called PAN liquid of the mixed liquor that comprises phosphoric acid and nitric acid and acetic acid.
Fig. 9 is the diagram that shows the apperance of S36 step.At this, in pixel portions 14, form pixel with connecting distribution 24 and pixel molybdenum film 96 with stacked structure.The described wiring part that piles up of patterning in pixel portions 14 is equivalent to the drain electrode of switch module 26.In addition, in portion of terminal 20, also form terminal with connecting distribution 124 and terminal molybdenum film 196 with stacked structure.The described wiring part that piles up of patterning in portion of terminal 20 is equivalent to the connecting portion of COG technology or OLB technology.
Then lower-glass 50 comprehensively, form protection insulating barrier 62 (S38) by SixNy constituted.Continue then lower-glass 50 comprehensively, form the planarization layer 64 of photonasty acrylic resin, and form the contact openings portion of pixel electrode, and remove the planarization layer 64 of portion of terminal and portion of terminal periphery by photoetching technique.So carry out the patterning (S40) of planarization layer.Afterwards, corresponding to forming opening or removed part on the planarization layer 64, form peristome by photoetching technique in necessary part at protection insulating barrier 62.So, protect the formation (S42) of insulating barrier contact hole.
The formation of peristome can be undertaken by following manner.At first, planarization layer 64 is carried out patterning by photoetching technique.In pixel portions 14, will be removed with the planarization layer 64 of the top of piling up wiring part of molybdenum film 96 with connecting distribution 24 and pixel corresponding to the pixel of drain electrode.In addition, also remove in the middle of the pixel portions 14 planarization layer 64 than the zone of the terminal part more lateral of data wire 25.Therefore, in portion of terminal 20, remove planarization layer 64 comprehensively protection insulating barrier 62 is exposed.Figure 10 shows this apperance.
Then protection insulating barrier 62 is carried out patterning.In pixel portions 14, the protection insulating barrier 62 of having removed planarization layer 64 parts is removed.In addition, in portion of terminal 20, will be removed with the protection insulating barrier 62 of the part of piling up wiring part of molybdenum film 196 with connecting distribution 124 and terminal corresponding to the terminal of the connecting portion of COG technology or OLB technology.The patterning of protection insulating barrier 62, can adopt to use has SF
6Or CF
4+ O
2Deng the dry-etching of etching gas, or use the Wet-type etching that buffered hydrofluoric acid (BHF) arranged.
So, in necessary part peristome is set.Figure 11 is presented at the diagram that protection insulating barrier 62 is provided with the state of necessary opening portion.As mentioned above, in portion of terminal 20 planarization layer 64 is removed.
Carry out clean (S44) of molybdenum film then.The film that is formed at the surface of molybdenum film is oxide-film or hydroxide film, is removed by washing only easily, and clean molybdenum film is exposed.
Form nesa coating (S46) at the position that the molybdenum film of cleaning exposes.Nesa coating can use ITO or IZO.By photoetching technique, form the pattern of set shape afterwards.Patterning can use the etching solution of oxalic acid system.
At this, in pixel portions 14, pixel is to use as pixel electrode with nesa coating 28.That is, pixel is connected in corresponding drain electrode with nesa coating 28 pixel is with connecting distribution 24 and the pixel wiring part that piles up with molybdenum film 96, and spreads all over the pixel region on the planarization layer 64 and extend configuration.On the other hand, in portion of terminal 20, terminal with nesa coating 128 as the connecting portion of COG technology or OLB technology and use.That is, terminal is configured in the terminal that is connected in bottom distribution 122 with connecting distribution 124 and terminal piling up on the wiring part with molybdenum film 196 with nesa coating 128.Figure 12 shows this apperance.
So, in the pixel portions 14 and portion of terminal 20 of the following substrate 12 of liquid crystal indicator 10, conductive wiring layer is used the distribution structure that piles up of molybdenum/titanium/aluminium/titanium.In background technology, the conductive wires structure is used the distribution structure that piles up of titanium/aluminium/titanium.Therefore, use Figure 13 and Figure 14, this two kinds of differences of piling up the effect of distribution structure are described.Below, for Fig. 1 to Figure 12 in identical element, additional prosign and detailed.In addition, below use the symbol of Fig. 1 to Figure 12 to describe.
At this, Figure 13 shows, in the formation step of piling up distribution structure of the portion of terminal of background technology, and from forming the pattern that piles up distribution of titanium/aluminium/titanium, the structure chart of each step till the formation of nesa coating.Figure 14 shows, in the formation step of piling up distribution structure of the portion of terminal of the method for the flow chart of foundation Fig. 6, and from forming the pattern that piles up distribution of molybdenum/titanium/aluminium/titanium, the structure chart of each step till the formation of nesa coating.
In the portion of terminal 20 of background technology, as described in the S32 of Fig. 5, will give film forming by the connection wiring layer 70 that stacked film constituted of titanium/aluminium/titanium.By photoetching technique and dry-etching, form the pattern of terminal afterwards with connection distribution 124.It is etching gas and carrying out that dry-etching can use chlorine.Figure 13 A shows this apperance.At this moment, the environmental gas by dry-etching etc. form oxide-film on the surface of the titanium 194 of the superiors.In addition, begin delay between step till the film forming of protection insulating barrier 62, can form oxide-film by film forming from the stacked film of titanium/aluminium/titanium.In Figure 13 A, show this interface state 200, for being formed with the state of these oxide-films.
Then form protection insulating barrier 62.Protection insulating barrier 62 is provided with peristome at corresponding terminal with connecting distribution 124 parts.When protection insulating barrier 62 was provided with peristome, the content illustrated with the S42 of Fig. 6 was identical, can be by using SF
6Or CF
4+ O
2Deng the dry-etching technology of etching gas and carry out.Figure 13 B shows this apperance.
At this moment, the part of the oxide-film of the titanium of the superiors is removed.Yet,, be formed at the surface of titanium 194 of the superiors of the peristome of protection insulating barrier 62 because of the SixNy that constitutes protection insulating barrier 62 and the surface resultant that reaction produced between the etching gas.In Figure 13 B, show this interface state 202, for being formed with the state of this surface resultant.
The detailed composition of this surface resultant is not understood as yet fully, but for comprising the film of fluorine (F) composition, this thickness for example is about 10nm to 30nm.This surface resultant on titanium surface is known as at least and can't be removed from the titanium surface in washing is clean.In addition; can remove this surface resultant though for example use the etching solution of HF system; but this moment, the titanium of the superiors also almost was removed; cause increase on the contrary with the interface resistance of ITO; moreover; more, make the ITO overlay film moulding deficiency of portion of terminal ITO, and undermine the reliability of portion of terminal for corrosion owing to protect the shape defect of the contact hole of insulating barrier 62.Therefore, the removal of surface resultant and be not easy to carry out.
Do not remove surface resultant, then forming terminal nesa coating 128.Figure 13 C shows this apperance.With nesa coating 128 and the terminal near surface that connects distribution 124, shown in the interface state 204 of Figure 13 C, become the state of residual surface resultant and oxide-film at terminal.
So, in the portion of terminal 20 of background technology, owing to use the residual surface resultant of near surface and the oxide-film of connection distribution 124 with nesa coating 128 and terminal at terminal, therefore, terminal increases with the interface resistance that is connected between the distribution 124 with terminal with nesa coating 128, causes the internuncial reduction of installation of each terminal.
Figure 14 is the diagram of explanation according to the formation apperance of the portion of terminal 20 of the illustrated flow chart of Fig. 6, Figure 14 A is corresponding to the S36 of Fig. 6 and the structure chart of Fig. 9, Figure 14 B is corresponding to the S42 of Fig. 6 and the structure chart of Figure 11, Figure 14 C is corresponding to the S44 of Fig. 6, and Figure 14 D is corresponding to the S46 of Fig. 6 and the structure chart of Figure 12.
Illustrated as above steps and each structure chart, at this, make by molybdenum/titanium/aluminium/titanium stacked film constituted piles up the wiring layer film forming.By photoetching technique and dry-etching, form terminal afterwards with connecting distribution 124 and terminal pattern with molybdenum film 196.When using dry-etching to form pattern, can use above-mentioned chlorine is etching gas.Its apperance is shown in Figure 14 A.At this moment, the environmental gas by dry-etching etc. also form oxide-film or hydroxide film at terminal with the surface of molybdenum film 196.Therefore, generate with the near surface of molybdenum film 196 at terminal oxide-film or hydroxide film are arranged.In Figure 14 A, show this interface state 206, for being formed with the state of this oxide-film or hydroxide film.
Then form protection insulating barrier 62 and not shown planarization layer.At portion of terminal and portion of terminal periphery, in case promptly all remove after forming planarization layer.At protection insulating barrier 62, with connecting distribution 124 parts peristome is being set with molybdenum film 196 and terminal afterwards corresponding to terminal.When protection insulating barrier 62 was provided with peristome, the content illustrated with the S42 of Fig. 6 was identical, can be by using SF
6Or CF
4+ O
2Deng the dry-etching technology of etching gas and carry out.Figure 14 B shows this apperance.
At this moment, the terminal of the superiors is removed with the oxide-film on molybdenum film 196 surfaces or the part of hydroxide film.Yet the surface resultant because of the SixNy that constitutes protection insulating barrier 62 and the reaction between the etching gas and ashing manufacturing step are afterwards produced is formed on the surface of the terminal of the superiors with molybdenum film 196.The same as the explanation that is associated with Figure 13 B, the detailed composition of this surface resultant is not understood as yet fully, but for comprising the film of fluorine (F) composition, this thickness for example is about 10nm to 30nm.Showing this interface state 208 in Figure 14 B, is on the state basis of Figure 14 A, also is formed with the state of this surface resultant.
Secondly illustrated as the S44 of Fig. 6, carry out cleaning of molybdenum film.This cleans to washing clean, but the oxide-film or the hydroxide film on molybdenum surface can be removed.Illustrated surface resultant among Figure 14 B is created on the surface of terminal with aluminium film 196, but owing to be formed with oxide-film or hydroxide film at terminal with the surface of molybdenum film 196, so this surface resultant also is created on the oxide-film or hydroxide film of molybdenum.Therefore, when removing oxide-film or hydroxide film only by washing, the surface resultant that is generated on it also divests effect and together removal by so-called.Figure 14 C shows this apperance.Demonstrate at terminal at this and to expose clean face with the surface of molybdenum film 196 and as the apperance of interface state 210.
On the clean face of described terminal, form terminal nesa coating 128 with molybdenum film 196.Figure 14 D shows this apperance.As mentioned above, nesa coating uses ITO or IZO, this generation is accompanied by hot manufacturing step and carries out, but use between the nesa coating 128 with the titanium 194 and the terminal of the superiors that connect distribution 124 because terminal is configured in terminal with molybdenum film 196, therefore can generate oxide-film hardly on titanium 194 surfaces of the superiors.This state shows as interface state 212 in Figure 14 D.
So, method according to the flow chart of Fig. 6, method than background technology, can almost be eliminated with the product of the main cause of the interface resistance increase that is connected distribution 124 with terminal with nesa coating 128 becoming terminal, therefore can suppress terminal usefulness nesa coating 128 and be connected the increase of the interface resistance between the distribution 124, and suppress the internuncial reduction of installation of each terminal with terminal usefulness.
Embodiment two
In above-mentioned, in order to form the stacked structure of molybdenum/titanium/aluminium/titanium, need to use device with this film of four layers difference film forming, though these films also can use different isolated plants to give film forming respectively, but consider nesa coating and inhibition, the shortening of step and the stability of membrane property etc. that the contact resistance that is connected between the distribution increases, be preferably the device that use can give this film of four layers film forming continuously.Yet, even do not use this continuous film forming apparatus, also can be only in the portion of terminal of expectation inhibition for lower interface resistance, nesa coating be connected between the distribution configuration molybdenum film, and suppress the generation of the oxide-film of titanium thus, and suppress nesa coating and the increase that is connected the interface resistance between the distribution.
For example; in above-mentioned example; pass through continuous film forming apparatus; both form the stacked structure of molybdenum/titanium/aluminium/titanium in pixel portions and portion of terminal; but in addition; also can behind stacked structure, form the protection insulating barrier, only form the molybdenum film more afterwards in portion of terminal with formation titanium/aluminium/titaniums such as continuous film forming apparatus.According to the method,, also can suppress the nesa coating and the increase that is connected the interface resistance between the distribution of portion of terminal even do not use four layers continuous film forming apparatus of molybdenum/titanium/aluminium/titanium.
Below, use flow chart, and the structure chart of Figure 17 to Figure 22 of part enlarged drawing, Figure 16 of Figure 15, this manufacture method is described and by liquid crystal indicator that this manufacture method obtained.Below, for Fig. 1 to Figure 14 in identical element, additional prosign and detailed.In addition, below use the symbol of Fig. 1 to Figure 14 to describe.In addition, in the structure chart of Figure 15, Figure 17 to Figure 22, the apperance of left side display pixel portion 14, the right side shows the apperance of portion of terminal 20.
Figure 15 is the diagram corresponding to Fig. 4, show pixel with the part that connects distribution 24, and terminal is with the partial graph that connects after distribution 124 and the terminal stacked structure with the part of molybdenum film 196 is amplified.In Figure 15, identical with Fig. 4, the diagram of substrate 13 and liquid crystal molecule 30 in the omission in following substrate 12, is omitted the diagram of lower-glass 50 and resilient coating 52.
In the left side of Figure 15, be the part enlarged drawing of the pixel of remarked pixel portion 14 with connection distribution 24.Pixel is connected in the semiconductor layer 54 that exposes because of the contact hole that is formed between gate insulator 56 and the interlayer dielectric 60 with connecting distribution 24, and is piled up titanium 90, aluminium 92 in regular turn, reaches the titanium 94 of the superiors and constitute to upper layer side by lower layer side.On the titanium 94 of the superiors, pile up protection insulating barrier 62 and dispose, at this stacked insulating film, so that the mode that the part of the titanium 94 of the superiors is exposed forms contact hole with planarization layer 64.The mode of titanium 94 that is exposed to the superiors of described contact hole with covering disposes pixel with nesa coating 28.So, as illustrated in fig. 2, pixel is connected in the drain electrode of switch module 26 with nesa coating 28, and becomes the pixel electrode that is disposed on the planarization layer 64.
On the right side of Figure 15, the terminal that is expression portion of terminal 20 is with connecting distribution 124 and the part enlarged drawing of terminal with molybdenum film 196.Terminal is with connecting distribution 124, for being connected in the distribution of the bottom distribution 122 on the resilient coating 52 that is configured in icon not and the gate insulator 56.Terminal is connected in the bottom distribution 122 that exposes because of the contact hole that is formed on interlayer dielectric 60 with connecting distribution 124, and is piled up titanium 190, aluminium 192 in regular turn, reaches the titanium 194 of the superiors and constitute to upper layer side by lower layer side.
In portion of terminal 20,, therefore, on the titanium 194 of the superiors, dispose protection insulating barrier 62, on described protection insulating barrier 62, so that the mode that the part of the titanium 194 of the superiors is exposed forms contact hole because planarization layer 64 is removed comprehensively.The mode of titanium 194 that is exposed to the superiors of described contact hole with covering disposes terminal with molybdenum film 196.Afterwards, dispose terminal nesa coating 128 thereon.
So, in pixel portions 14, be formed with pixel and use connection distribution 24 and pixel, in portion of terminal 20, be formed with terminal is used nesa coating 128 with connection distribution 124, terminal molybdenum film 196, terminal conductive stack film with the conductive stack film of nesa coating 28.That is, in pixel portions 14, distribution 24 between do not dispose molybdenum film with pixel with being connected with nesa coating 28 in pixel, with respect to this, suppress in the portion of terminal 20 of interface resistance in expectation, at terminal with nesa coating 128 and terminal with being connected between the distribution 124, dispose terminal molybdenum film 196.
Then use flow chart and the following structure chart of Figure 17 of Figure 16, the step of manufacturing in order to the structure that obtains Figure 15 is described.Figure 16 is presented at the flow chart of the later step of the step S32 of the background technology that has illustrated among Fig. 5, corresponding to Fig. 6.
The initial step of Figure 16 for by photoetching technique and dry-etching, is carried out patterning to the distribution that piles up of the titanium/aluminium/titanium of institute's film forming among the S32 of Fig. 5, and is formed the step (S50) of the connection distribution of titanium/aluminium/titanium.It is etching gas and carrying out that dry-etching for example can use chlorine.
Figure 17 shows the diagram of the apperance of S50 step.At this, in pixel portions 14, form pixel with connecting distribution 24 with stacked structure.In pixel portions 14, form the figuratum wiring part that piles up, be equivalent to the drain electrode of switch module 26.In addition, in portion of terminal 20, also form terminal with connecting distribution 124 with stacked structure.In portion of terminal 20, form the figuratum wiring part that piles up, be equivalent to the connecting portion of COG technology or OLB technology.
Then lower-glass 50 comprehensively, form protection insulating barrier 62 (S52) by SixNy constituted.Continue then lower-glass 50 comprehensively, form the planarization layer 64 of photonasty acrylic resin, and, remove (S54) by patterning with the planarization layer 64 of portion of terminal and portion of terminal periphery by the contact openings portion of photoetching technique with the pixel portions electrode.Afterwards, for the protection insulating barrier 62 of the part of having removed planarization layer 64, form peristome (S56) in necessary part by photoetching technique.
The formation of peristome can be undertaken by following manner.At first, planarization layer 64 is carried out patterning by photoetching technique.In pixel portions 14, will be removed with the planarization layer 64 of the top of piling up wiring part that connects distribution 24 corresponding to the pixel of drain electrode.In addition, and remove in the pixel portions 14 planarization layer 64 than the zone of the terminal part more lateral of data wire 25.Therefore, in portion of terminal 20, comprehensive removal planarization layer 64 and make the protection insulating barrier 62 expose.Figure 18 shows this apperance.
Then protection insulating barrier 62 is carried out patterning.In pixel portions 14, the protection insulating barrier 62 of having removed planarization layer 64 parts is removed.In addition, in portion of terminal 20, will be removed with the protection insulating barrier 62 that piles up wiring part that connects distribution 124 corresponding to the terminal of the connecting portion of COG technology or OLB technology.The patterning of protection insulating barrier 62 can use dry-etching.For example can use SF
6Or CF
4+ O
2Deng etching gas.
So, in necessary part peristome is set.Figure 19 is presented at the diagram that protection insulating barrier 62 is provided with the state of necessary opening portion.As mentioned above, in portion of terminal 20 planarization layer 64 is removed.
Then carry out the film forming (S58) of molybdenum film.This step is for to spread all over the step that makes molybdenum film film forming of lower-glass 50 comprehensively.The isolated plant that this step can use molybdenum film film forming to use.For example use sputtering unit, can make the thickness of the about 100nm of molybdenum film film forming.Figure 20 shows, molybdenum film 72 covers peristome illustrated in fig. 19 and in the apperance of film forming comprehensively.
Remove the part (S60) of molybdenum film afterwards.This step is the step of the patterning of molybdenum film, and only the increase part at expectation inhibition interface resistance stays the molybdenum film, and the molybdenum film that other is regional is removed.For example, when expectation inhibition interface resistance part is portion of terminal 20, can carries out patterning to the molybdenum film 72 of portion of terminal 20, and in pixel portions 14, the molybdenum film can be removed.The part of molybdenum film is removed, and promptly patterning can use the Wet-type etching technology.Wet-type etching can use the suitable etching solution that comprises phosphoric acid and nitric acid.This kind etching solution can use the so-called PAN liquid of the mixed liquor that comprises phosphoric acid and nitric acid and acetic acid.
Figure 21 shows the apperance after the part of carrying out the molybdenum film is removed.Express at this, in the zone of pixel portions 14, remove the molybdenum film comprehensively, and in portion of terminal 20, form the apperance of terminal on the distribution 124 with connecting with molybdenum film 196 at terminal.
After the formation (S52) of above-mentioned illustrated protection insulating barrier; the patterning (S54) that carries out planarization layer in regular turn, the formation (S56) of protection insulating barrier contact hole are described; carry out the film forming (S58) of molybdenum film, the part removal (S60) of molybdenum film afterwards more in regular turn; but also can after the formation (S52) of protection insulating barrier, at first protect the formation (S56) of insulating barrier contact hole; after the part of carrying out film forming (S58), the molybdenum film of molybdenum film is then removed (S60); the last patterning (S54) that carries out planarization layer more so also can obtain same syndeton and effect.In addition, when in the part of molybdenum film is removed the step of (S60), staying the molybdenum of pixel portions, can obtain to be same syndeton and effect with previous illustrated embodiment one.
Carry out clean (S62) of molybdenum film then.The S44 of this step and Fig. 6 is same content, will be formed on terminal only and be removed by washing with the oxide-film or the hydroxide film on the surface of molybdenum film 196, with so that clean molybdenum film expose and carry out.
Terminal in cleaning in portion of terminal 20 exposes the place with the surface of molybdenum film 196, forms nesa coating (S64).As mentioned above, nesa coating can use ITO or IZO, and uses the etching solution of oxalic acid system, forms the pattern of set shape by photoetching technique.Figure 22 shows this apperance.
So, in pixel portions 14, the pixel that has titanium in the superiors is with connecting on the distribution 24, and the configuration pixel is used as pixel electrode with nesa coating 28 and with it.In addition, in portion of terminal 20, distribution 124 between dispose terminal molybdenum film 196 with terminal with being connected with nesa coating 128 at terminal.Constitute by this, the thermal process in the time of can passing through the nesa coating film forming, the inhibition terminal produces oxidation with the titanium of the superiors that connect distribution 124, and can suppress terminal nesa coating 128 and the terminal increase of the interface resistance that is connected 124 of distributions.
Embodiment three
In above-mentioned, between the connection distribution of the superiors and nesa coating, be provided with the molybdenum film, as intermediate coat with titaniferous.But also can use by electric conducting material constituted other the material membrane that can carry out Wet-type etching as intermediate coat, and replace the molybdenum film.As mentioned above, when the situation of molybdenum film, can the surface attachments of molybdenum film be removed, even but when the situation of the electric conducting material that can carry out Wet-type etching, also can remove this surface attachments easily by Wet-type etching by washing clean grade.Above-mentioned ITO (tin indium oxide), IZO (indium zinc oxide) can carry out Wet-type etching though be nesa coating.Therefore, can use ITO, IZO as intermediate coat replacing the molybdenum film, and reach the purpose that suppresses interface resistance.
Below explanation, use ITO with nesa coating and terminal nesa coating, uses the example of IZO as intermediate coat as pixel.Certainly, also can use ITO as intermediate coat this moment.In addition, when using IZO to use nesa coating as pixel with nesa coating and terminal, intermediate coat also can use ITO or IZO.
When using IZO, till the film forming of the connection wiring layer of titanium/aluminium/titanium, identical with above-mentioned content illustrated in fig. 5 as intermediate coat.The flow chart of the step after the formation of the connection wiring layer of titanium/aluminium of the S32 of Figure 23 displayed map 5/titanium.
The flow chart of Figure 23, in the Fig. 6 of flow chart when using the molybdenum film as the situation of intermediate coat, the situation that the molybdenum film is replaced into the IZO film is identical.In addition, corresponding to the structure chart of these steps, also with the Fig. 8 to Figure 12 of structure chart when using the molybdenum film as the situation of intermediate coat in, the content that molybdenum film 72 is replaced into the IZO film is identical.Therefore, below based on the difference when using the molybdenum film, use Figure 23 that its sequence of steps is described, and, express corresponding diagram and omit its detailed description for corresponding respectively structure chart.In addition, below use the symbol of Fig. 1 to Figure 22 to describe.
The initial step of Figure 23 is the film forming step (S35) of IZO film.In fact this step carries out with the S32 step of Fig. 5 continuously for to spread all over the step that makes IZO film film forming of lower-glass 50 comprehensively.That is,, after the film forming step of titanium/aluminium/titanium, continue to make the IZO film forming by sputtering method.All thickness of the IZO/ titanium/aluminium/titanium after the film forming are 500 to 900nm.About this film forming of four layers, for example can use one chip sputter continuous film forming apparatus, be connected in the S30 step and carry out the film formation process of titanium layer film forming-aluminium lamination film forming-titanium layer film forming-IZO layer film forming in regular turn.
In the film forming of IZO film, be preferably the importing of doing one's utmost to suppress oxygen in the membrance casting condition.Thus, can be at the titanium of the superiors that connect wiring layer, the surface oxidation during with IZO film film forming is suppressed at bottom line.Fig. 8 is the structure chart corresponding to S35, in this figure, by molybdenum film 72 is considered as the IZO film, can learn in the apperance that connects the comprehensive formation IZO film on the wiring layer 70.
Then, pile up distribution (S37) by what photoetching technique and dry-etching formed IZO/ titanium/aluminium/titanium.It is etching gas and carrying out that dry-etching for example can use chlorine.Also can be after the IZO film being carried out patterning by Wet-type etching, being dry etching gases with chlorine again carries out patterning to the stacked film of titanium/aluminium/titanium.The Wet-type etching of IZO film can use the suitable etching solution that comprises phosphoric acid and nitric acid.This kind etching solution can use the so-called PAN liquid of the mixed liquor that comprises phosphoric acid, nitric acid and acetic acid.
Fig. 9 is the structure chart that shows corresponding to the step of S37.At this, also pixel can be considered as pixel IZO film, terminal IZO film with molybdenum film 96, terminal respectively with molybdenum film 196.That is, in pixel portions 14, form pixel with connecting distribution 24 and pixel IZO film with stacked structure.This piles up the drain electrode that wiring part is equivalent to switch module 26.In addition, in portion of terminal 20, also form terminal with connecting distribution 124 and terminal IZO film 196 with stacked structure.This that forms pattern in portion of terminal 20 piles up wiring part, is equivalent to the connecting portion of COG technology or OLB technology.
Then lower-glass 50 comprehensively, form protection insulating barrier 62 (S38) by SixNy constituted.Heat when the IZO film can't protect insulating barrier to form because of this, the heat during for example because of the CVD film forming produce crystallization.Therefore can be easily by after described Wet-type etching remove.Then lower-glass 50 comprehensively, form the planarization layer 64 of photonasty acrylic resin, and form the contact openings portion of pixel electrode, and remove the planarization layer 64 of portion of terminal and portion of terminal periphery and carry out the patterning (S40) of planarization layer by photoetching technique.Afterwards, corresponding to forming opening or removed part on the planarization layer 64, form peristome by photoetching technique in necessary part at protection insulating barrier 62, and protect the formation (S42) of insulating barrier contact hole.Illustrated identical of the content of these steps and Fig. 6.
The particular content of the formation of peristome is also with illustrated identical of Fig. 6.That is, at first, planarization layer 64 is carried out patterning by photoetching technique.In pixel portions 14, will be removed with the planarization layer 64 of the top of piling up wiring part of IZO film with connecting distribution 24 and pixel corresponding to the pixel of drain electrode.In addition, and remove in the pixel portions 14 planarization layer 64 than the zone of the terminal part more lateral of data wire 25.Therefore, in portion of terminal 20, comprehensive removal planarization layer 64 exposes protection insulating barrier 62.Figure 10 is the counter structure figure that demonstrates this state.
Then protection insulating barrier 62 is carried out patterning.At this; in pixel portions 14; the protection insulating barrier 62 of having removed planarization layer 64 parts is removed; in portion of terminal 20, will be removed with the protection insulating barrier 62 of the part of piling up wiring part of IZO film with connecting distribution 124 and terminal corresponding to the terminal of the connecting portion of COG technology or OLB technology.The patterning of protection insulating barrier 62, can adopt to use has SF
6Or CF
4+ O
2Deng the dry-etching of etching gas, or use the Wet-type etching that buffered hydrofluoric acid (BHF) arranged, this is also same as described above.When the patterning of described protection insulating barrier 62, because in this peristome, on the titanium of the superiors that connect wiring layer, have the IZO film, the generation attachment that is produced in the time of therefore can avoiding protecting the patterning of insulating barrier 62 impacts titanium.
So, in necessary part peristome is set.Figure 11 is presented at protection insulating barrier 62 necessary opening portion is set, and the counter structure figure of the apperance of planarization layer 64 being removed in portion of terminal 20.Form employed impedance in the step at peristome, peel off by ashing afterwards and wet type and removed.
Carry out clean (S45) of IZO film then.This so-called cleaning, be not that removal IZO film is all, but the superficial layer of IZO film removed by Wet-type etching.Because the IZO film can not form the thermal process crystallization of step because of the protection insulating barrier, therefore can this superficial layer be removed by Wet-type etching.Afterwards,, can remove the surface attachments of IZO film easily, and clean IZO film is exposed by this step.
Cleaning of IZO film promptly in this surperficial slight etching, can be used the Wet-type etching technology.Wet-type etching can use the suitable etching solution that comprises phosphoric acid and nitric acid.This kind etching solution can use the so-called PAN liquid of the mixed liquor that comprises phosphoric acid, nitric acid and acetic acid.Because titanium can be because of PAN produces dissolving or damage,, also can the titanium of the superiors that connect wiring layer be exerted an influence hardly even excessively carry out Wet-type etching.
Expose part at the IZO of cleaning film and form nesa coating (S46).Illustrated identical of this step and Fig. 6, nesa coating can use ITO, and forms the pattern of set shape by photoetching technique.About patterning, can use the etching solution of oxalic acid system.
At this, in pixel portions 14, pixel is used as pixel electrode with nesa coating 28.That is, pixel is connected in corresponding drain electrode with nesa coating 28 pixel is with connecting distribution 24 and the pixel wiring part that piles up with the IZO film, and spreads all over the pixel region on the planarization layer 64 and extensively dispose.On the other hand, in portion of terminal 20, terminal with nesa coating 128 as the connecting portion of COG technology or OLB technology and use.That is, terminal is configured in the terminal that is connected in bottom distribution 122 with connecting distribution 124 and terminal piling up on the wiring part with the IZO film with nesa coating 128.Figure 12 shows pairing structure chart.
Figure 24 is the diagram of explanation according to the formation apperance of the portion of terminal 20 of the illustrated flow chart of Figure 23, is the diagram corresponding to Figure 14.Figure 24 A is corresponding to the S37 of Figure 23 and the structure chart of Fig. 9, and Figure 24 B is corresponding to the S42 of Figure 23 and the structure chart of Figure 11, and Figure 24 C is corresponding to the S45 of Figure 23, and Figure 24 D is corresponding to the S46 of Figure 23 and the structure chart of Figure 12.Below use the symbol of Fig. 1 to Figure 22, and the additional new symbol of IZO film is described.
Illustrated as above steps and each structure chart, at this, make by IZO/ titanium/aluminium/titanium stacked film constituted piles up the wiring layer film forming.By photoetching technique and dry-etching, form terminal afterwards with connecting distribution 124 and terminal pattern with IZO film 198.Use dry-etching when patterning, can use above-mentioned chlorine is etching gas.Figure 24 A shows this apperance.At this moment, the environmental gas by dry-etching etc. also form oxide-film etc. at terminal with the surface of IZO film 198.In Figure 24 A, show this interface state 206, for being formed with the state of this oxide-film etc.
Then form protection insulating barrier 62.As mentioned above, the IZO film can't produce crystallization because of this forms heat.Form not shown planarization layer afterwards.At portion of terminal and portion of terminal periphery, in case promptly all remove after forming planarization layer.At protection insulating barrier 62, with connecting distribution 124 parts peristome is being set with IZO film 198 and terminal afterwards corresponding to terminal.When protection insulating barrier 62 was provided with peristome, the content illustrated with the S42 of Fig. 6 was identical, can SF be arranged by use
6Or CF
4+ O
2Deng the dry-etching technology of etching gas and carry out.Figure 24 (b) shows this apperance.
At this moment, the terminal of the superiors is removed with the part of the oxide-film on IZO film 198 surfaces etc.Yet the surface resultant because of the SixNy that constitutes protection insulating barrier 62 and the reaction between the etching gas and ashing manufacturing step are afterwards produced is formed at the surface of the terminal of the superiors with IZO film 198.As the same with the associated explanation of Figure 13 B, the detailed composition of this surface resultant is understood as yet fully, but for comprising the film of fluorine (F) composition, its thickness for example is that about 10nm is to about 30nm.Showing this interface state 208 in Figure 24 B, is on the state basis of Figure 24 A, also is formed with the state of this surface resultant.
Illustrated as the S45 of Figure 23 afterwards, carry out cleaning of IZO film, promptly undertaken the superficial layer of IZO film is removed by Wet-type etching.By this step, terminal can be removed with surface film oxide of IZO film 198 etc.Illustrated surface resultant among Figure 24 B is created on the surface of terminal with IZO film 198, but owing to be formed with oxide-film etc. at terminal with the surface of IZO film 198, so this surface resultant also is created on the oxide-film of IZO film 198 etc.Therefore, when removing IZO film surperficial in this step, oxide-film that its top is generated etc. and surface resultant also divest effect and together remove by so-called.Figure 24 C shows this apperance.Demonstrate at terminal at this and to expose clean face with the surface of IZO film 198 and as the apperance of interface state 210.
On the clean face of this terminal, form terminal nesa coating 128 with IZO film 198.Figure 24 D shows this apperance.As mentioned above, nesa coating uses ITO, though this generation is accompanied by hot step and carries out, but use between the nesa coating 128 with terminal with the titanium 194 of the superiors that connect distribution 124 because terminal is disposed at terminal with IZO film 198, so can generate oxide-film hardly on the surface of the titanium 194 of the superiors.This state shows as interface state 212 in Figure 24 D.
So, method according to the flow chart of Figure 23, the IZO film can't produce crystallization because of the formation heat of SixNy, therefore can utilize can be by the advantage that can not cause the Wet-type etching of damage to be removed to titanium, and than the method for background technology, more can almost eliminate fully with the product of the increase main cause of the interface resistance that is connected distribution 124 with nesa coating 128 and terminal becoming terminal.Thus, can suppress terminal usefulness nesa coating 128 and be connected the increase of the interface resistance between the distribution 124, and suppress the internuncial reduction of installation of each terminal with terminal usefulness.
As mentioned above, also can be with the technology of using by electric conducting material constituted other material membrane replaces as the intermediate coat molybdenum film that can carry out Wet-type etching, be applicable to Figure 15, structure illustrated in fig. 16, promptly be applicable to, only suppress portion of terminal for lower interface resistance in expectation, nesa coating be connected the structure that disposes intermediate coat between the distribution.Below use the symbol of Fig. 1 to Figure 24 to describe.
Embodiment four
Figure 25 is the diagram corresponding to Figure 15, show pixel with the part that connects distribution 24, and terminal is with the partial graph that connects after distribution 124 and the terminal stacked structure with the part of IZO film 198 is amplified.At this, in the left side of Figure 25, the pixel of remarked pixel portion 14 is with the part enlarged drawing that connects distribution 24, and on the right side of Figure 25, the terminal of expression portion of terminal 20 is with connecting distribution 124 and the part enlarged drawing of terminal with IZO film 198.That is, Figure 25 is replaced into the structure of terminal with IZO film 198 for the terminal with Figure 15 with molybdenum film 196.
Promptly, identical with the structure of Figure 15, in pixel portions 14, be formed with pixel with connecting distribution 24 and pixel conductive stack film with nesa coating 28, in portion of terminal 20, be formed with terminal and use the conductive stack film of nesa coating 128 with IZO film 198, terminal with connecting distribution 124, terminal.That is, in pixel portions 14, distribution 24 between do not dispose IZO film with pixel with being connected with nesa coating 28 in pixel, with respect to this, suppress in the portion of terminal 20 of interface resistance in expectation, at terminal with nesa coating 128 and terminal with being connected between the distribution 124, dispose terminal usefulness IZO film 198.
Next use the flow chart of Figure 26, the step of manufacturing in order to the structure that obtains Figure 25 is described.The flow chart of Figure 26, in the Figure 16 of flow chart when using the molybdenum film as intermediate coat, it is identical that the molybdenum film is replaced into the IZO film.In addition, corresponding to the structure chart of these steps, also with the Figure 17 to Figure 22 of structure chart when using the molybdenum film as intermediate coat in, the content that molybdenum film 72 is replaced into the IZO film is identical.Therefore, below based on the difference when using the molybdenum film, use Figure 26 that this step is described, and, express this correspondence diagram and omit its detailed description for corresponding respectively structure chart.In addition, below use the symbol of Fig. 1 to Figure 25 to describe.
The initial step of Figure 26 for by photoetching technique and dry-etching, is carried out patterning to the distribution that piles up of the titanium/aluminium/titanium of institute's film forming among the S32 of Fig. 5, and is formed the step (S50) of the connection distribution of titanium/aluminium/titanium.The illustrated content of this step and Figure 16 is identical, and corresponding structure chart is Figure 17.
Then lower-glass 50 comprehensively, form protection insulating barrier 62 (S52) by SixNy constituted.Then then lower-glass 50 comprehensively, form the planarization layer 64 of photonasty acrylic resin, by the contact openings portion of photoetching technique, removed (S54) in the patterning mode with the planarization layer 64 of portion of terminal and portion of terminal periphery with the pixel portions electrode.Afterwards, for the protection insulating barrier 62 of the part of having removed planarization layer 64, form peristome (S56) in necessary part by photoetching technique.These steps are also identical with the illustrated content of Figure 16, and the formation step of peristome is also identical.Afterwards planarization layer is carried out patterning, Figure 18 is presented in the portion of terminal 20, removes the counter structure figure that planarization layer 64 makes the apperance exposed of protection insulating barrier 62 comprehensively.Figure 19 is illustrated in the counter structure figure that protection insulating barrier 62 is provided with the state of necessary opening portion.
Then carry out the film forming (S59) of IZO film.This step is for to spread all over the step that makes IZO film film forming of lower-glass 50 comprehensively.The isolated plant that this step can use IZO film film forming to use.For example can use sputtering unit, make the thickness of the about 100nm of IZO film film forming.Figure 20 of corresponding pie graph shows, molybdenum film 72 is replaced into the IZO film, and covers peristome illustrated in fig. 19 and in the apperance of film forming IZO film comprehensively.
Remove the part (S61) of IZO film afterwards.This step is the step of the patterning of IZO film, for the increase part that only suppresses interface resistance in expectation stays the IZO film, and the step removed of the IZO film that other is regional.For example, when expectation inhibition interface resistance part is portion of terminal 20, the IZO film of portion of terminal 20 can be formed the pattern of intended shape, and in pixel portions 14, the IZO film be removed.The part of IZO film is removed, and promptly patterning can use the Wet-type etching technology.Wet-type etching can use the suitable etching solution that comprises phosphoric acid and nitric acid.This kind etching solution can use the so-called PAN liquid of the mixed liquor that comprises phosphoric acid, nitric acid and acetic acid.
Figure 21 of corresponding pie graph shows, terminal is replaced into terminal IZO film with molybdenum film 196, and carries out the apperance after the part removal of IZO film.Express at this, in the zone of pixel portions 14, remove the IZO film comprehensively, and in portion of terminal 20, form the apperance of terminal on the distribution 124 with connecting with the IZO film at terminal.
As the explanation that is associated with Figure 16; after the formation (S52) of above-mentioned illustrated protection insulating barrier; carry out the patterning (S54) of planarization layer in regular turn; the formation (S56) of protection insulating barrier contact hole; carry out the film forming (S59) of IZO film afterwards more in regular turn; the part of IZO film is removed (S61); but also can after the formation (S52) of protection insulating barrier, at first protect the formation (S56) of insulating barrier contact hole; then at the film forming of carrying out the IZO film (S59); after the part of IZO film is removed (S61); the last patterning (S54) that carries out planarization layer more so also can obtain same syndeton and effect.In addition, when in the part of IZO film is removed the step of (S61), staying the IZO film of pixel portions, can obtain syndeton and the effect same with previous illustrated embodiment one, embodiment three.
Carry out clean (S63) of IZO film then.This so-called cleans,, be not that to remove the IZO film all, but the superficial layer of IZO film removed by Wet-type etching with illustrated identical of the S45 of Figure 23.Because the IZO film can not form the thermal process crystallization of step because of the protection insulating barrier, therefore can its superficial layer be removed by Wet-type etching.Afterwards,, can remove the surface attachments of IZO film easily, clean IZO film is exposed by this step.
About cleaning of IZO film, i.e. the etching of its superficial layer can be used the Wet-type etching technology.Wet-type etching can use the suitable etching solution that comprises phosphoric acid and nitric acid.This kind etching solution can use the so-called PAN liquid of the mixed liquor that comprises phosphoric acid, nitric acid and acetic acid.Because titanium can be because of PAN liquid produces dissolving or damage,, also can the titanium of the superiors of contact wiring layer be exerted an influence hardly even excessively carry out Wet-type etching.
Form nesa coating (S64) at the IZO of the cleaning film place of exposing.Illustrated identical of this step and Figure 16, nesa coating can use ITO, and forms the pattern of set shape by photoetching technique.Patterning can use the etching solution of oxalic acid system.Figure 22 is this counter structure figure.
So, in pixel portions 14, the pixel that has titanium in the superiors is with connecting on the distribution 24, and the configuration pixel is used as pixel electrode with nesa coating 28 and with it.In addition, in portion of terminal 20, distribution 124 between dispose terminal IZO film with terminal with being connected with nesa coating 128 at terminal.Constitute by this, thermal process that can be when making the nesa coating film forming suppresses terminal and produces oxidation with the titanium of the superiors that connect distribution 124, and can suppress terminal is used the interface resistance that is connected distribution 124 with nesa coating 128 and terminal increase.
Embodiment five
As shown in figure 27, present embodiment is removed the part of molybdenum film 197 in portion of terminal 20 and is constituted in embodiment one.
The connection wiring layer that extremely will have the stacked structure of titanium/aluminium/titanium gives till the step of film forming, and identical with the step of embodiment one, flow chart is identical with Fig. 5.
Figure 28 is the flow chart that shows step afterwards.Figure 29 to Figure 35 is the structure chart corresponding to each step.
Among Figure 28, till the step that forms peristome at planarization layer (S70 to S78), and the step till Figure 29 to Figure 33, with the step (S34 to S42) of Fig. 6 of embodiment one, and the step till Fig. 7 to Figure 11 is identical.
Figure 33 is presented at the diagram that protection insulating barrier 62 is provided with the state of necessary opening portion.In portion of terminal 20 planarization layer 64 is removed.
In portion of terminal 20, carry out the removal (S80) of molybdenum film then.This step is carried out as mask with protection insulating barrier 62.That is, in S78, with molybdenum film 196, be provided with the peristome of the protection insulating barrier 62 that is formed with opening and be essentially the peristome of identical size, and become terminal molybdenum film 197 with peristome at terminal.Therefore, terminal only stays in the bottom of protection insulating barrier 62 with molybdenum film 197, and has and the identical peristome of peristome of protecting insulating barrier 62, and this peristome becomes contact hole, in this contact hole, exposes the titanium 194 of terminal with the superiors that connect distribution 124.Figure 34 shows this apperance.In portion of terminal 20, form figuratum this part in this way, be equivalent to the connecting portion of COG technology or OLB technology.
The removal of molybdenum film is only carried out in portion of terminal 20, and in pixel portions 14, pixel remains unchanged with shape of molybdenum film 96 etc.The removal of molybdenum film, be patterning, can use the Wet-type etching technology.Wet-type etching can use the suitable etching solution that comprises phosphoric acid and nitric acid.This etching solution can use the so-called PAN liquid of the mixed liquor that comprises phosphoric acid, nitric acid and acetic acid.
Then form nesa coating (S82).Nesa coating can use ITO or IZO.By photoetching technique, form the pattern of set shape afterwards.Patterning can use the etching solution of oxalic acid system.
At this, in pixel portions 14, pixel is used as pixel electrode with nesa coating 28.That is, pixel is connected in corresponding drain electrode with nesa coating 28 pixel is with connecting distribution 24 and the pixel wiring part that piles up with molybdenum film 96, and spreads all over the pixel region on the planarization layer 64 and extensively dispose.On the other hand, in portion of terminal 20, terminal with nesa coating 128 as the connecting portion of COG technology or OLB technology and use.That is, terminal is configured on the terminal usefulness connection distribution 124 that is connected in bottom distribution 122 with nesa coating 128.Terminal is connected with nesa coating 128 with terminal in fact hardly with molybdenum film 197.Figure 35 shows this apperance.
So, in the pixel portions 14 and portion of terminal 20 of the following substrate 12 of liquid crystal indicator 10, conductive wiring layer is used the distribution structure that piles up of molybdenum/titanium/aluminium/titanium.But in portion of terminal 20, form molybdenum/titanium/aluminium/titanium pile up distribution structure after, the identical zone of peristome with protection insulating barrier 62 is removed as peristome.With respect to this, in background technology, the conductive wires structure is used the distribution structure that piles up of titanium/aluminium/titanium.Therefore, below use Figure 36 and Figure 37, this two kinds of differences of piling up the effect of distribution structure are described.Below, for Figure 29 to Figure 35 be identical element, additional prosign and detailed.In addition, below use the symbol of Figure 29 to Figure 35 to describe.
At this, Figure 36 shows, in the formation step of piling up distribution structure of the portion of terminal of background technology, from form titanium/aluminium/titanium pile up the pattern of distribution the time, the structure chart of each step till peristome is set at protection insulating barrier 62.Figure 37 is in the formation step of piling up distribution structure that is presented at according to the portion of terminal of the method for the flow chart of Figure 28, from being formed with the pattern that piles up distribution of molybdenum/titanium/aluminium/titanium, and the structure chart of each step till peristome is set at protection insulating barrier 62.
In the portion of terminal 20 of background technology, as described in the S32 of Fig. 5, will give film forming by the connection wiring layer 70 that stacked film constituted of titanium/aluminium/titanium.By photoetching technique and dry-etching, form the pattern of terminal afterwards with connection distribution 124.It is etching gas that dry-etching can use chlorine.Figure 36 A shows this apperance.At this moment, the environmental gas by dry-etching etc. form oxide-film on the surface of the titanium 194 of the superiors.In Figure 36 A, show this interface state 200, for being formed with the state of this oxide-film.
Then form protection insulating barrier 62.Protection insulating barrier 62 is provided with peristome at corresponding terminal with connecting distribution 124 parts.When protection insulating barrier 62 was provided with peristome, the content illustrated with the S78 of Figure 28 was identical, can SF be arranged by use
6Or CF
4+ O
2Deng etching gas the dry-etching technology and carry out.Figure 36 B shows this apperance.
At this moment, the part of the oxide-film of the titanium of the superiors is removed.Yet,, be formed at the surface of the titanium 194 of the superiors because of the SixNy of formation protection insulating barrier 62 and the surface resultant that reaction produced between the etching gas.In Figure 36 B, show this interface state 202, for being formed with the state of this surface resultant.
This surface resultant is for comprising the film of fluorine (F), titanium, oxygen compositions such as (O), and its thickness for example is that about 10nm is to about 30nm.This surface resultant 202 on titanium surface can be learnt at least and can't be removed from the titanium surface in washing is clean.For example, if use HF (hydrofluoric acid) though the etching solution that is can be removed this surface resultant, this moment, the titanium of the superiors also can be removed much.Therefore, the removal of this surface resultant and be not easy to carry out.
Since after will form terminal with nesa coating 128, if still residual have an above-mentioned surface resultant, then may make terminal with the interface resistance increase that is connected between the distribution 124 of nesa coating 128 and terminal, cause internuncial reduction of each terminal.
Figure 37 is the diagram of explanation according to the formation apperance of the portion of terminal 20 of the illustrated flow chart of Figure 28, Figure 37 A is corresponding to the S72 of Figure 28 and the structure chart of Figure 31, Figure 37 B is corresponding to the S78 of Figure 28 and the structure chart of Figure 33, and Figure 37 C is corresponding to the S80 of Figure 28 and the structure chart of Figure 34.
Illustrated as above steps and each structure chart, at this, make by molybdenum/titanium/aluminium/titanium stacked film constituted piles up the wiring layer film forming.By photoetching technique and dry-etching, form terminal afterwards with connecting distribution 124 and terminal pattern with molybdenum film 196.Use dry-etching when patterning, can use above-mentioned chlorine is etching gas.Figure 37 A shows this apperance.
Then form protection insulating barrier 62.At protection insulating barrier 62, with connecting distribution 124 parts peristome is being set with molybdenum film 196 and terminal corresponding to terminal.When protection insulating barrier 62 was provided with peristome, the content illustrated with the S78 of Figure 28 was identical, can SF be arranged by use
6Or CF
4+ O
2Deng the dry-etching technology of etching gas and carry out.Figure 37 B shows this apperance.
At this moment, constitute the SixNy of protection insulating barrier 62 and the surface resultant that reaction produced between the etching gas, be formed at the surface of the terminal of the superiors with molybdenum film 196.Illustrated as being associated with Figure 36 B, the detailed composition of this surface resultant is understood as yet fully, but for comprising the film of fluorine (F) composition, its thickness for example is that about 10nm is to about 30nm.Showing this interface state 208 in Figure 37 B, is on the state basis of Figure 37 A, also forms the state of this surface resultant.
Illustrated as the S80 of Figure 28 afterwards, in portion of terminal 20, carry out the removal of molybdenum film.As mentioned above, the removal of molybdenum film, i.e. patterning for example can use PAN liquid and undertaken by the Wet-type etching technology.The removal of molybdenum film, available protection insulating barrier 62 carries out as mask.Therefore, the molybdenum film of part of the peristome of protection insulating barrier 62 is removed, and along with the removal of molybdenum film, the surface resultant on the molybdenum film also together is removed.Thus, terminal is exposed with the titanium 194 of the superiors that connect distribution 124.Figure 37 C shows this apperance.At this, molybdenum film and surface resultant formed thereon together are removed, and the apperance that the surface of the titanium 194 of the superiors is exposed demonstrates as interface state 212.Form terminal nesa coating 128 afterwards more thereon.
So; method according to the flow chart of Figure 28; owing to can remove the surface resultant that dry-etching generated because of protection insulating barrier 62; therefore; method than background technology; it is only residual few with the film of the near surface that is connected distribution 124 with nesa coating 128 and terminal to residue in terminal, therefore can suppress terminal and use nesa coating 128 to use with terminal to be connected the increase of the interface resistance between the distribution 124, and suppress internuncial reduction of each terminal.
Embodiment six
In above-mentioned, between the connection distribution of the superiors and nesa coating, be provided with the molybdenum film as intermediate coat with titaniferous.But also can use by electric conducting material constituted other the material membrane that can carry out Wet-type etching as intermediate coat, and replace the molybdenum film.Above-mentioned ITO (tin indium oxide), IZO (indium zinc oxide) can carry out Wet-type etching though be nesa coating.Therefore, can use ITO, IZO as intermediate coat replacing the molybdenum film, and can reach the inhibition of interface resistance.
Below explanation, use ITO with nesa coating and terminal nesa coating, uses the example of IZO as intermediate coat as pixel.Certainly, also can use ITO as intermediate coat this moment.In addition, when using IZO to use nesa coating as pixel with nesa coating and terminal, intermediate coat also can use ITO or IZO.
When using IZO, till the film forming of the connection wiring layer of titanium/aluminium/titanium, identical with above-mentioned content illustrated in fig. 5 as intermediate coat.Figure 38 is the flow chart of the step after the formation of connection wiring layer of titanium/aluminium/titanium of the S32 of displayed map 5.
The flow chart of Figure 38, in the Figure 28 of flow chart when using the molybdenum film as intermediate coat, it is identical that the molybdenum film is replaced into the IZO film.In addition, corresponding to the structure chart of these steps, also with the Figure 30 to Figure 35 of structure chart when using the molybdenum film as intermediate coat in, the content that molybdenum film 72 is replaced into the IZO film is identical.Therefore, below based on the difference when using the molybdenum film, use Figure 38 that this step is described, and, express this correspondence diagram for corresponding respectively structure chart, omit this detailed description.In addition, below use the symbol of Figure 29 to Figure 37 to describe.
The initial step of Figure 38 is the film forming step (S71) of IZO film.In fact this step carries out with the S32 step of Fig. 5 continuously for to spread all over the step that makes IZO film film forming of lower-glass 50 comprehensively.That is,, after the film forming step of titanium/aluminium/titanium, continue to make thin IZO film forming by sputtering method.All thickness of the IZO/ titanium/aluminium/titanium after the film forming are 500 to 900nm.This film forming of four layers for example can be used one chip continuous sputtering film formation device, is connected on the film formation process that the S30 step is carried out titanium layer film forming-aluminium lamination film forming-titanium layer film forming-IZO layer film forming afterwards in regular turn.Certainly, these films also can use the film formation device of different special uses to give film forming respectively.
In the film forming of IZO film, be preferably the importing of doing one's utmost to suppress oxygen in the membrance casting condition.Thus, can be to the titanium of the superiors that connect wiring layer, the surface oxidation during with IZO film film forming is suppressed at bottom line.Fig. 8 is the structure chart corresponding to S71, in this figure, by molybdenum film 72 is considered as the IZO film, can learn in the apperance that connects the comprehensive formation IZO film on the wiring layer 70.
Then, pile up distribution (S73) by what photoetching technique and dry-etching formed IZO/ titanium/aluminium/titanium.It is etching gas and carrying out that dry-etching for example can use chlorine.Also can be after the IZO film being carried out patterning by Wet-type etching, being dry etching gases with chlorine again carries out patterning to the stacked film of titanium/aluminium/titanium.The Wet-type etching of IZO film can use the suitable etching solution that comprises phosphoric acid and nitric acid.This kind etching solution can use the so-called PAN liquid of the mixed liquor that comprises phosphoric acid, nitric acid and acetic acid.
Figure 31 is the structure chart that shows corresponding to the step of S73.At this, also pixel can be considered as pixel IZO film, terminal IZO film with molybdenum film 96, terminal respectively with molybdenum film 196.That is, in pixel portions 14, form pixel with connecting distribution 24 and pixel IZO film with stacked structure.This piles up wiring part, is equivalent to the drain electrode of switch module 26.In addition, in portion of terminal 20, also form terminal with connecting distribution 124 and terminal IZO film 196 with stacked structure.As the explanation that is associated with the step of S73, at this, terminal is identical shaped with terminal with being connected distribution 124 also with the IZO film, but finally in S81 described later, becomes the terminal that is provided with peristome IZO film.
Then lower-glass 50 comprehensively, form protection insulating barrier 62 (S74) by SixNy constituted.Heat when the IZO film can't protect insulating barrier to form because of this, the heat during for example because of the CVD film forming produces crystallization.Therefore can be easily by after described Wet-type etching remove.Then then lower-glass 50 comprehensively, form the planarization layer 64 of photonasty acrylic resin, and form the contact openings portion of pixel electrode, and remove the planarization layer 64 (S76) of portion of terminal and portion of terminal periphery by photoetching technique.Afterwards, for the protection insulating barrier 62 of formation opening on the planarization layer 64 or removed part, form peristome (S78) in necessary part by photoetching technique.The illustrated content of these steps and Figure 28 is identical.
The particular content of the formation of peristome is also identical with the explanation of Figure 28.That is, at first, planarization layer 64 is carried out patterning by photoetching technique.In pixel portions 14, will be removed with the planarization layer 64 of the top of piling up wiring part of IZO film with connecting distribution 24 and pixel corresponding to the pixel of drain electrode.In addition, and remove in the pixel portions 14 planarization layer 64 than the zone of the terminal part more lateral of data wire 25.Therefore, in portion of terminal 20, remove planarization layer 64 comprehensively protection insulating barrier 62 is exposed.Figure 32 is the counter structure figure that demonstrates this state of expression.
Then protection insulating barrier 62 is carried out patterning.At this; in pixel portions 14; the protection insulating barrier 62 of having removed planarization layer 64 parts is removed; in portion of terminal 20, will be removed with the protection insulating barrier 62 of the part of piling up wiring part of IZO film with connecting distribution 124 and terminal corresponding to the terminal of the connecting portion of COG technology or OLB technology.About the patterning of protection insulating barrier 62, can adopt to use has SF
6Or CF
4+ O
2Deng the dry-etching of etching gas, or use the Wet-type etching that buffered hydrofluoric acid (BHF) arranged, this is also same as described above.When the patterning of this protection insulating barrier 62, because in peristome, on the titanium of the superiors that connect wiring layer, the IZO film is arranged, the generation attachment that is produced in the time of therefore can avoiding protecting the patterning of insulating barrier 62 impacts titanium.
So, in necessary part peristome is set.Figure 33 is presented at protection insulating barrier 62 necessary opening portion is set, and the counter structure figure of the apperance of planarization layer 64 being removed in portion of terminal 20.Form employed impedance in the step at peristome, peel off by ashing afterwards and wet type and removed.
In portion of terminal 20, carry out the removal (S81) of IZO film then.This step is that mask carries out with protection insulating barrier 62.That is,, be provided with and be essentially the peristome of identical size, and become the IZO film of the terminal with peristome with the peristome of the protection insulating barrier 62 that in S78, is formed with opening at terminal IZO film.Therefore, after the step of S81, terminal only residues in the bottom of protection insulating barrier 62 with the IZO film; and has the identical peristome of peristome with protection insulating barrier 62; this peristome becomes contact hole, in this contact hole, exposes the titanium 194 of terminal with the superiors that connect distribution 124.Figure 34 is the counter structure figure that shows this apperance.In portion of terminal 20, form figuratum this part in this way, be equivalent to the connecting portion of COG technology or OLB technology.
The removal of IZO film is only carried out in portion of terminal 20, and in pixel portions 14, pixel remains unchanged with shape of IZO film etc.About the removal of IZO film, be patterning, can use the Wet-type etching technology.Wet-type etching can use the suitable etching solution that comprises phosphoric acid and nitric acid.This kind etching solution can use the so-called PAN liquid of the mixed liquor that comprises phosphoric acid, nitric acid and acetic acid.Because titanium can be because of PAN liquid produces dissolving or damage, employed Wet-type etching during removal that therefore can be by the IZO film suppresses the titanium of the superiors of contact wiring layer is exerted an influence.
Then form nesa coating (S82).Content illustrated among this step and Figure 28 is identical, and nesa coating can use ITO, and can form the pattern of set shape by photoetching technique.Patterning can use the etching solution of oxalic acid system.
At this, in pixel portions 14, pixel is used as pixel electrode with nesa coating 28.That is, pixel is connected in corresponding drain electrode with nesa coating 28 pixel is with connecting distribution 24 and the pixel wiring part that piles up with the IZO film, and spreads all over the pixel region on the planarization layer 64 and extensively dispose.On the other hand, in portion of terminal 20, terminal with nesa coating 128 as the connecting portion of COG technology or OLB technology and use.That is, terminal is configured on the terminal usefulness connection distribution 124 that is connected in bottom distribution 122 with nesa coating 128.Have the terminal IZO film of peristome, be connected with nesa coating 128 with terminal in fact hardly.Figure 35 is the counter structure figure that shows this apperance.
So, in the pixel portions 14 and portion of terminal 20 of the following substrate 12 of liquid crystal indicator 10, conductive wiring layer is used the distribution structure that piles up of IZO/ titanium/aluminium/titanium.But in portion of terminal 20, form IZO/ titanium/aluminium/titanium pile up distribution structure after, the zone identical with the peristome of protection insulating barrier 62 removed as peristome.
Figure 39 is the diagram of explanation according to the formation apperance of the portion of terminal 20 of the illustrated flow chart of Figure 38, is the diagram corresponding to Figure 37.Figure 39 A is corresponding to the S73 of Figure 38 and the structure chart of Figure 31, and Figure 39 B is corresponding to the S78 of Figure 38 and the structure chart of Figure 33, and Figure 39 C is corresponding to the S81 of Figure 38 and the structure chart of Figure 34.Below use the symbol of Figure 29 to Figure 37, and the additional new symbol of IZO film is described.
Illustrated as above-mentioned S73, make by IZO/ titanium/aluminium/titanium stacked film constituted piles up the wiring layer film forming.By photoetching technique and dry-etching, form terminal afterwards with connecting distribution 124 and terminal pattern with IZO film 198.Figure 39 A shows this apperance.Use dry-etching when patterning, can use above-mentioned chlorine is etching gas.At this moment, be formed with oxide-film etc. at terminal with the surface of IZO film 198.In Figure 39 A, show this interface state 206, for being formed with the state of this oxide-film etc.
Then form protection insulating barrier 62.As mentioned above, the IZO film can't produce crystallization because of this forms heat.At protection insulating barrier 62, with connecting distribution 124 parts peristome is being set with IZO film 198 and terminal corresponding to terminal.When protection insulating barrier 62 was provided with peristome, the content illustrated with the S78 of Figure 38 was identical, can SF be arranged by use
6Or CF
4+ O
2Deng etching gas the dry-etching technology and carry out.Figure 39 B shows this apperance.
At this moment, constitute the SixNy of protection insulating barrier 62 and the surface resultant that reaction produced between the etching gas, be formed at the surface of the terminal of the superiors with IZO film 198.As the explanation that is associated with Figure 36 B, the detailed composition of this surface resultant is understood as yet fully, but for comprising the film of fluorine (F) composition, its thickness for example is that about 10nm is to about 30nm.Showing this interface state 208 in Figure 39 B, is on the state basis of Figure 39 A, also is formed with the state of this surface resultant.
Illustrated as the S81 of Figure 38 afterwards, in portion of terminal 20, carry out the removal of IZO film.As mentioned above, about the removal of IZO film, be patterning, for example can use PAN liquid and undertaken by the Wet-type etching technology.In addition, as mentioned above, titanium can not produce damage because of PAN liquid.The removal of IZO film, available protection insulating barrier 62 carries out for mask.Therefore, the IZO film of part of the peristome of protection insulating barrier 62 is removed, and along with the removal of IZO film, the surface resultant on the IZO film also together is removed.Thus, terminal is exposed with the titanium 194 of the superiors that connect distribution 124.Figure 39 C shows this apperance.At this, IZO film and surface resultant formed thereon together are removed, and the apperance that the surface of the titanium 194 of the superiors is exposed demonstrates as interface state 212.Form terminal nesa coating 128 afterwards more thereon.
So; method according to the flow chart of Figure 38; the IZO film can't produce crystallization because of the formation heat of SixNy; therefore can utilize can be by the advantage that can not cause the Wet-type etching of damage to be removed to titanium; removal is because of the surface resultant that dry-etching generated of protection insulating barrier 62; therefore; method than background technology; it is only residual few with the film of the near surface that is connected distribution 124 with terminal with nesa coating 128 to residue in terminal; therefore can suppress terminal usefulness nesa coating 128 and be connected the increase of the interface resistance between the distribution 124, and suppress internuncial reduction of each terminal with terminal usefulness.
Claims (16)
1, a kind of electric optical device is characterized in that, possesses:
Pixel portions; And
Portion of terminal is in order to install other semiconductor circuit or other distribution substrate at the periphery of aforementioned pixel portions; And
Aforementioned portion of terminal has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn:
Terminal has the superiors of titaniferous with connecting distribution;
The terminal intermediate coat is made of the electric conducting material that can carry out Wet-type etching; And
The terminal nesa coating.
2, electric optical device according to claim 1 is characterized in that, aforementioned pixel portions has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn:
Pixel is with connecting distribution, to form with connecting the identical step of distribution with the aforementioned terminal of formation;
The pixel intermediate coat is to form with the identical step of intermediate coat with the aforementioned terminal of formation; And
The pixel nesa coating is to form with the identical step of nesa coating with the aforementioned terminal of formation.
3, electric optical device according to claim 1 is characterized in that, aforementioned terminal intermediate coat is a molybdenum.
4, electric optical device according to claim 1 is characterized in that, aforementioned terminal intermediate coat is indium zinc oxide or tin indium oxide.
5, electric optical device according to claim 2 is characterized in that, aforementioned pixel intermediate coat is a molybdenum.
6, electric optical device according to claim 2 is characterized in that, aforementioned pixel intermediate coat is indium zinc oxide or tin indium oxide.
7, a kind of electric optical device is characterized in that, possesses:
Pixel portions; And
Portion of terminal is in order to install other semiconductor circuit or other distribution substrate at the periphery of aforementioned pixel portions; And
Portion of terminal has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn:
Terminal has the superiors of titaniferous with connecting distribution;
Terminal is with protecting insulating barrier;
The terminal intermediate coat is to be exposed in order to covering to be formed on the aforementioned terminal aforementioned terminal film that connect distribution of the terminal of protection insulating barrier with peristome, and is made of the electric conducting material that can carry out Wet-type etching; And
The terminal nesa coating.
8, electric optical device according to claim 7 is characterized in that, aforementioned pixel portions has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn:
Pixel is with connecting distribution, to form with connecting the identical step of distribution with the aforementioned terminal of formation;
Pixel is with the protection insulating barrier, to form with the identical step of protection insulating barrier with the aforementioned terminal of formation; And
The pixel nesa coating is to be exposed in order to covering to be formed on the aforementioned pixel aforementioned pixel film that connect distribution of the pixel of protection insulating barrier with peristome, and to form with the identical step of nesa coating with the aforementioned terminal of formation; And
Aforementioned terminal is removed in pixel portions with intermediate coat.
9, electric optical device according to claim 7 is characterized in that, aforementioned terminal intermediate coat is a molybdenum.
10, electric optical device according to claim 7 is characterized in that, aforementioned terminal intermediate coat is indium zinc oxide or tin indium oxide.
11, a kind of electric optical device is characterized in that, possesses:
Pixel portions; And
Portion of terminal is in order to install other semiconductor circuit or other distribution substrate at the periphery of aforementioned pixel portions; And
Aforementioned pixel portions has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn:
Pixel has the superiors of titaniferous with connecting distribution;
The pixel intermediate coat is made of the electric conducting material that can carry out Wet-type etching; And
The pixel nesa coating.
12, electric optical device according to claim 11 is characterized in that, contains the pixel protection insulating barrier that is formed between aforementioned pixel usefulness intermediate coat and the aforementioned pixel usefulness nesa coating;
Aforementioned portion of terminal has the stacked structure that is piled up following member by lower layer side to upper layer side in regular turn:
Terminal is with connecting distribution, to form with connecting the identical step of distribution with the aforementioned pixel of formation;
The terminal intermediate coat is to form with the identical step of intermediate coat with the aforementioned pixel of formation;
Terminal is with the protection insulating barrier, to form with the identical step of protection insulating barrier with the aforementioned pixel of formation; And
The terminal nesa coating; be in order to cover that aforementioned terminal is provided with opening with protection insulating barrier and aforementioned terminal with intermediate coat and the terminal that forms with the terminal nesa coating of peristome, and to form with the identical step of nesa coating with the aforementioned pixel of formation.
13, electric optical device according to claim 11 is characterized in that, aforementioned terminal intermediate coat is a molybdenum.
14, electric optical device according to claim 11 is characterized in that, aforementioned terminal intermediate coat is indium zinc oxide or tin indium oxide.
15, electric optical device according to claim 12 is characterized in that, aforementioned pixel intermediate coat is a molybdenum.
16, electric optical device according to claim 12 is characterized in that, aforementioned pixel intermediate coat is indium zinc oxide or tin indium oxide.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2007082769 | 2007-03-27 | ||
| JP2007082768 | 2007-03-27 | ||
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| JP2007-082769 | 2007-03-27 | ||
| JP2007-153348 | 2007-06-08 | ||
| JP2007-153349 | 2007-06-08 | ||
| JP2007153348A JP4329847B2 (en) | 2007-03-27 | 2007-06-08 | Electro-optical device and method of manufacturing electro-optical device |
| JP2007153349A JP4353282B2 (en) | 2007-03-27 | 2007-06-08 | Electro-optic device |
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| CN101276797B CN101276797B (en) | 2010-11-03 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972263A (en) * | 2013-01-28 | 2014-08-06 | 索尼公司 | Display unit, method of manufacturing the same, and electronic apparatus |
| CN106549019A (en) * | 2015-09-18 | 2017-03-29 | 株式会社日本显示器 | Semiconductor device and its manufacture method |
| CN109768015A (en) * | 2019-01-29 | 2019-05-17 | 南京中电熊猫平板显示科技有限公司 | A kind of array substrate and its manufacturing method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10032802B2 (en) | 2014-05-02 | 2018-07-24 | Joled Inc. | Thin-film transistor device and display device using same |
| JP6358510B2 (en) | 2014-05-02 | 2018-07-18 | 株式会社Ｊｏｌｅｄ | THIN FILM TRANSISTOR DEVICE AND DISPLAY DEVICE USING THE SAME |
-
2007
- 2007-06-08 JP JP2007153348A patent/JP4329847B2/en not_active Expired - Fee Related
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2008
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972263A (en) * | 2013-01-28 | 2014-08-06 | 索尼公司 | Display unit, method of manufacturing the same, and electronic apparatus |
| CN106952929A (en) * | 2013-01-28 | 2017-07-14 | 索尼公司 | Display unit and its manufacture method and electronic equipment |
| CN108109963A (en) * | 2013-01-28 | 2018-06-01 | 索尼公司 | Display unit and its manufacturing method and electronic equipment |
| US10341475B2 (en) | 2013-01-28 | 2019-07-02 | Sony Corporation | Display unit, method of manufacturing the same, and electronic apparatus |
| CN108109963B (en) * | 2013-01-28 | 2022-07-01 | 索尼公司 | Display unit, method of manufacturing the same, and electronic apparatus |
| CN106549019A (en) * | 2015-09-18 | 2017-03-29 | 株式会社日本显示器 | Semiconductor device and its manufacture method |
| CN106549019B (en) * | 2015-09-18 | 2020-01-10 | 株式会社日本显示器 | Semiconductor device and method for manufacturing the same |
| CN109768015A (en) * | 2019-01-29 | 2019-05-17 | 南京中电熊猫平板显示科技有限公司 | A kind of array substrate and its manufacturing method |
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| CN101276797B (en) | 2010-11-03 |
| JP4329847B2 (en) | 2009-09-09 |
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