CN101271214A - Display equipment production method - Google Patents
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- CN101271214A CN101271214A CNA2008100035039A CN200810003503A CN101271214A CN 101271214 A CN101271214 A CN 101271214A CN A2008100035039 A CNA2008100035039 A CN A2008100035039A CN 200810003503 A CN200810003503 A CN 200810003503A CN 101271214 A CN101271214 A CN 101271214A
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Abstract
The invention relates to a manufacturing method for a display, which comprises: a first baseplate that is provided with a plurality of pixels is provided, each pixel is provided with a plurality of sub-pixels; a second baseplate is provided, which is opposite to the first baseplate and is divided into a plurality of areas that are corresponding to the sub-pixels, and at least three of the areas are colored areas, and at least one area is a fourth area; a photoresist design layer is formed at the second baseplate, the photoresist design layers in at least three colored areas of the areas are defined respectively as colored photoresist design layers, and the photoresist design layer in at least one fourth area is defined as a fourth photoresist design layer; a cover layer is formed on the photoresist design layer; and a liquid crystal layer is applied between the first baseplate and the second baseplate.
Description
The application is the dividing an application that be on May 15th, 2006 and denomination of invention the applying date for the Chinese patent application No.200610082729.3 of " semi-penetration semi-reflection type display and manufacture method thereof, manufacturing method of display device ".
Technical field
The present invention relates to a kind of manufacturing method of display device.
Background technology
LCD (liquid crystal display, hereinafter to be referred as LCD) be the main flow of present flat-panel screens development, its displaying principle is dielectric anisotropy and the electric anisotropy that utilizes liquid crystal molecule to have, when extra electric field, make the ordered state conversion of liquid crystal molecule, cause liquid crystal film to produce various photoelectric effect.The panel construction of LCD is generally by two plate bases and is formed by stacking, and the space of certain distance is left in order to the perfusion liquid crystal in the centre, and is being formed with counter electrode respectively on the two substrates up and down, turning to and arranging in order to the control liquid crystal molecule.
Please refer to Figure 1A, at present in display panels, except three primary colors pixel red pixel R, green pixel G, blue pixel B, other adds white pixel W, to increase penetrating or reflecting brightness of panel integral body, and then reach less electricity consumption, yet the technology of the display panels of RGBW four color contamination looks still exists many problems to overcome.
Figure 1B discloses the sectional view of known technology semi-penetration semi-reflective (transflective) LCD assembly, please refer to Figure 1B, at first, first substrate 100 is provided, this first substrate 100 can be array base palte, first substrate 100 comprises the pixel region in order to display frame, and pixel region also comprises a plurality of sub-pixel area.
Next, on first substrate 100, form a plurality of thin film transistor (TFT) 108, the first substrates 100 and can be array base palte, the corresponding thin film transistor (TFT) 108 of each pixel, and each thin film transistor (TFT) 108 includes grid 102, source electrode 104 and drains 106.
Then, second substrate 110 with respect to first substrate 100 is provided, second substrate 110 can be colored filter substrate, and second substrate 110 can comprise red color area, blue region, green district and white area with respect to sub-pixel, wherein be formed with red photoresist R, be formed with green photoresist G in the green district, be formed with blue photoresist B in blue region in red color area, and be formed with transparent photoresist W in white area, have the chromatic filter layer of RGBW four color contamination looks with formation.
The method for making of transparent photoresist is after green photoresist, blue photoresist and red photoresist form, another overlayer 112 of blanket formula coating one deck planarization is inserted the space between the photic resist R of above-mentioned three primary colors, G, B again, to make transparent photoresist W, in addition, planarization layer can also provide more smooth surface, so that carry out subsequent technique.Yet, because green photoresist G, blue photoresist B and red photoresist R are to the surface tension of another overlayer 112 and the influence of mechanical relationship, cause another overlayer 112 to produce offset d, and make panel produce yellow partially color offset phenomenon in white area and other zone.
Summary of the invention
According to the problems referred to above, fundamental purpose of the present invention has good penetrating and reflecting brightness for a kind of display module is provided, and can avoid for example problem of colour cast, to improve the optical characteristics of panel.
The invention provides a kind of semi-penetration semi-reflection type display.First substrate, it has a plurality of pixels, and each pixel is divided into a plurality of sub-pixels, and each sub-pixel has at least one penetrating region and at least one echo area.Second substrate, it corresponds to this first substrate, and this second substrate is divided into a plurality of zones, and in the above-mentioned zone at least three be the 4th zone for colored region and at least one, and the zone corresponds to sub-pixel.Overlayer covers on described first substrate, wherein the thickness corresponding to the part of covering layer of four-range penetrating region is thicker than the tectal thickness of other parts, and is equal to the tectal thickness of other parts substantially corresponding to the thickness of the part of covering layer of four-range echo area.Liquid crystal layer is arranged between described first substrate and described second substrate.
The invention provides a kind of manufacture method of half-penetrating half-reflecting display.At first, provide first substrate, it has a plurality of pixels, and each pixel is divided into a plurality of sub-pixels, and each sub-pixel has at least one echo area and at least one penetrating region.Thereafter, provide second substrate, it corresponds to described first substrate, and this second substrate is divided into a plurality of zones, and in the described zone at least three be the 4th zone for colored region and at least one, and described zone corresponds to sub-pixel.Then, on described first substrate, form overlayer, this overlayer is carried out repeatedly gold-tinted technology, wherein compare still less with exposure frequency corresponding to the part of covering layer of the penetrating region of colored region corresponding to the exposure frequency of the part of covering layer of four-range penetrating region.Then, between described first substrate and described second substrate, apply liquid crystal layer.
The invention provides a kind of manufacture method of display.At first, provide first substrate, it has a plurality of pixels, and each pixel is divided into a plurality of sub-pixels.Then, provide second substrate, it is with respect to this first substrate, and this second substrate is divided into a plurality of zones, and in the described zone at least three be the 4th zone for colored region and at least one, and described zone corresponds to described sub-pixel.Follow-up, on described second substrate, form patterned photoresist layer, and respectively in described at least three colored region in described zone this patterned photoresist layer of definition be colored patterned photoresist layer and in described at least one the 4th zone this patterned photoresist layer of definition be the 4th photoresist figure layer., on this patterned photoresist layer form overlayer, and between described first substrate and described second substrate, apply liquid crystal layer thereafter.
Description of drawings
Figure 1A discloses the synoptic diagram of four color contamination dichroic liquid crystal display panels.
Figure 1B discloses the sectional view of known technology semi-penetration semi-reflective LCD assembly.
Fig. 2 discloses the sectional view of the single space semi-penetration semi-reflective LCD assembly of one embodiment of the invention.
Fig. 3 discloses the double pitch semi-penetration semi-reflective LCD assembly of one embodiment of the invention.
Fig. 4 A～4C discloses the tectal manufacture method of the single space semi-penetration semi-reflective LCD assembly of one embodiment of the invention.
Fig. 5 A～5C discloses the tectal manufacture method of the single space semi-penetration semi-reflective LCD assembly of another embodiment of the present invention.
Fig. 6 A～6C discloses the tectal manufacture method of the double pitch semi-penetration semi-reflective LCD assembly of one embodiment of the invention.
Fig. 7 A～7C discloses the tectal manufacture method of the double pitch semi-penetration semi-reflective LCD assembly of another embodiment of the present invention.
Fig. 8 discloses the LCD assembly of one embodiment of the invention.
[primary clustering symbol description]
R～red area; G～green area;
B～blue region; W～white portion;
R～echo area; T～penetrating region;
D～offset; 200～the first substrates;
202～grid; 204～source electrode;
206～drain electrode; 208～thin film transistor (TFT);
210～the second substrates; 212～another overlayer;
214～overlayer; The overlayer of 216～protrusion;
302～liquid crystal layer; 304～overlayer;
306～projection; 402～open area;
502～open area; 602～open area;
800～the first substrates;
The surface with respect to first substrate of 801～the second substrates;
802～grid; 803～planarization layer;
804～source electrode; 805～planarization layer surface;
806～drain electrode; 807～overlayer;
808～thin film transistor (TFT); 810～the second substrates;
830～liquid crystal layer.
Embodiment
Below will describe in detail as reference of the present invention with embodiment, and with reference to the description of drawings embodiments of the invention.At accompanying drawing or in describing, the similar or identical identical Reference numeral of part use.In the accompanying drawings, the shape of embodiment or thickness can enlarge, to simplify or convenient the sign.The part of each assembly will be described explanation respectively in graphic, it should be noted that the assembly that does not illustrate among the figure or describe, and can have the various forms that well known to a person skilled in the art.In addition, when narration one deck was positioned at a substrate or another layer and goes up, this layer can be located immediately on substrate or another layer, or intermediary layer can also be arranged therebetween.
The 2nd figure discloses the sectional view of single space (single gap) the semi-penetration semi-reflective LCD assembly of one embodiment of the invention, please refer to the 2nd figure, at first, first substrate 200 is provided, this first substrate 200 can be array base palte, and the material of this substrate comprises transparent material (for example glass, glass with lower alkali content, alkali-free glass etc.), flexible materials (for example plastics, polycarbonate, poly-methyl-prop vinegar acid methyl esters etc.), light tight material (for example pottery, wafer etc.) etc.First substrate 200 comprises the pixel region in order to display frame, and pixel region also comprises a plurality of sub-pixel area, sub-pixel area comprises echo area R and penetrating region T, wherein in the R of echo area, LCD assembly can be by the reflected light of extraneous light as light source, in addition, in penetrating region T, the light that LCD assembly can penetrate by backlight so, can reach preferable service efficiency and save power supply as light source.
Next, on first substrate 200, form a plurality of thin film transistor (TFT)s 208, first substrate 200 can be array base palte, in an embodiment of the present invention, the corresponding thin film transistor (TFT) 208 of each pixel, and each thin film transistor (TFT) 208 includes grid 202, channel layer (not illustrating), ohmic contact layer (not illustrating), source electrode 204 and drain electrode 206, preferably, thin film transistor (TFT) 208 is bottom gate type (bottom-gate type) transistor, certainly, also can use the transistor (top gate type (top-gate type) for example of other type, etch-stop type (etching-stop type), or other transistor), and the material that constitutes each thin film transistor (TFT) 208 comprise amorphous silicon, polysilicon, monocrystalline silicon, the combination of microcrystal silicon or above-mentioned material.That is to say, the material of channel layer (not illustrating) and ohmic contact layer (not illustrating) comprises the combination of amorphous silicon, polysilicon, monocrystalline silicon, microcrystal silicon or above-mentioned material, and ohmic contact layer (not illustrating) also is doped with N type adulterant (for example phosphorus, arsenic or other material) or P type adulterant (for example boron or other material), makes its behavior be similar to ohm property.
Then, second substrate 210 with respect to first substrate 200 is provided, second substrate 210 can be colored filter substrate, and second substrate 210 can comprise with respect to three color regions of sub-pixel and the 4th district, wherein three color regions can comprise red color area respectively, blue region, green district, and the 4th district can be white area (being also referred to as achromatic region), be formed with red photoresist R in red color area, be formed with green photoresist G in the green district, be formed with blue photoresist B in blue region, and be formed with transparent photoresist W in white area, have the chromatic filter layer of RGBW four color contamination looks with formation.
Be noted that at this, embodiments of the invention are described color configuration of the present invention with three primary colors R, G, B, yet, the invention is not restricted to this, three primary colors R, G, B can be any pattern colored region that shows, that is to say that red photoresist R, green photoresist G, blue photoresist B can be other colored photoresist pattern (for example yellow, brown, blue-green, purple etc.).Moreover the shape of colored region of the present invention and white portion is embodiment with the rectangle, yet, also can use other shape (for example circle, polygon, triangle, hexagon, ellipse etc.).In addition, the 4th zone of the present invention is embodiment with white, yet under the situation for the degree of saturation of considering other color, contrast, the 4th zone also can be color or other color of colored region.
In above-mentioned liquid crystal display structure, the method for making of transparent photoresist is for after formation for example comprises the colored patterned photoresist layer of green photoresist, blue photoresist and red photoresist, blanket formula another overlayer 212 of applying one deck planarization is inserted the space between the colored patterned photoresist layer of the photic resist R of above-mentioned for example three primary colors, G, B again, to make transparent photoresist W, in addition, planarization layer also can provide more smooth surface, carries out in order to subsequent technique.Because green photoresist G, blue photoresist B and red photoresist R to the surface tension of another overlayer 212 and the influence of mechanical relationship, cause another overlayer 212 to produce offset d in the 4th district and colored region.
In an embodiment of the present invention, on first substrate 200, form overlayer 214, cover first substrate 200 and on thin-film transistor component 208, wherein in penetrating region T, comparing with the part of covering layer 214 of color region corresponding to the part of covering layer 216 in the 4th district has thicker thickness, in the R of echo area, part of covering layer and color region part of covering layer corresponding to the 4th district have equal thickness substantially, in other words, in penetrating region T, has projection 216 corresponding to the overlayer of the 4th district (white area W).Like this, in penetrating region T, the overlayer 216 of this thicker degree can compensate the offset of white pixel W, improves optical efficiency.
In order to form the overlayer of said structure shape, one embodiment of the invention adopts following method: at first, on first substrate, form for example overlayer 214 of photosensitive material, thereafter, overlayer 214 is carried out multiexposure, multiple exposure technology, wherein T and corresponding to comparing still less on the exposure frequency of the part of covering layer 216 of white area W and the penetrating region and corresponding to the exposure frequency of the part in red color area, blue region, green district on the penetrating region is follow-up, and overlayer 214 is developed.
Fig. 4 A～4C discloses the tectal manufacture method of single space (single gap) the semi-penetration semi-reflective LCD assembly of one embodiment of the invention, at first, please refer to Fig. 4 A, on first substrate, (do not illustrate) the blanket formula and apply for example overlayer of the photosensitive material of photoresist, cover first substrate and on thin-film transistor component, wherein in this embodiment, overlayer is positive photoresist.Next, cover the penetrating region T of first substrate with mask, and to echo area R overlayer expose (position of exposure indicates with oblique line).
Follow-up, please refer to Fig. 4 B, with mask cover penetrating region T corresponding to the part of covering layer on the 4th district (white area W), and the overlayer that overlayer and echo area R corresponding to three color regions that for example comprise blue region B, green district G and red color area R on the penetrating region T are gone up all colours exposing.Follow-up, please refer to Fig. 4 C, cover open area 402 part of covering layer in addition that penetrating region T goes up all colours pixel region with mask, and the overlayer of 402 positions, open area is exposed.According to said method, because the exposure frequency of the part of covering layer in the 4th district (white area W) of penetrating region T lacks once than the exposure frequency of the part of covering layer of three color regions, therefore, the thickness of the part of covering layer in the 4th district of penetrating region T is thicker than other regional part of covering layer.
In a preferred embodiment of the present invention, overlayer 214 thickness that apply are about 2.0 μ m, exposure dose can expose to the sun approximately and the degree of depth of the overlayer 214 about 0.6 μ m～0.8 μ m of positive photoresist, the thickness of the part of covering layer 216 on the white area W of the penetrating region T that said method forms is about 1.8～2.2 μ m, and the thickness of other regional part of covering layer 214 is about 1.2～1.6 μ m.Corresponding to the part of covering layer 216 of this white area W than thick substantially 0.1～0.3 μ m of other parts overlayer 214.
Fig. 5 A～5C discloses the tectal manufacture method of single space (single gap) the semi-penetration semi-reflective LCD assembly of another embodiment of the present invention, please refer to Fig. 5 A, at first on first substrate, (do not illustrate) the blanket formula and apply for example overlayer of the photosensitive material of photoresist, cover first substrate and on thin-film transistor component, wherein in this embodiment, overlayer is positive photoresist.Thereafter, with mask cover penetrating region T corresponding to the part of covering layer on the 4th district (white area W), and the overlayer that overlayer and echo area R corresponding to three color regions that for example comprise blue region B, green district G and red color area R on the penetrating region T are gone up all colours exposing.
Next, please refer to Fig. 5 B, cover the zone of the penetrating region T of first substrate with mask, and echo area R overlayer is exposed corresponding to all colours pixel.Follow-up, please refer to Fig. 5 C, cover penetrating region T with mask and go up, and the overlayer of 502 positions, open area is exposed corresponding to the part of covering layer outside the open area 502 of all colours pixel region.According to said method, because the exposure frequency of the part of covering layer in the 4th district of penetrating region T lacks once than the exposure frequency of other regional part of covering layer, therefore, the thickness of the part of covering layer in the 4th district of penetrating region T is thicker than the part of covering layer of color region.
Fig. 3 discloses one embodiment of the invention double pitch (dual gap) semi-penetration semi-reflective LCD assembly, its structure is similar with the 2nd figure substantially, for succinctly, do not encyclopaedize at this, different is for both, double pitch semi-penetration semi-reflective LCD assembly is littler than the thickness T t of the liquid crystal layer 302 of penetrating region T at the thickness T r of the liquid crystal layer 302 of echo area R, therefore, as shown in Figure 3, the integral thickness of the overlayer 304 of echo area R is bigger than the thickness of the overlayer 304 of penetrating region T, in addition, for solving above-mentioned color offset phenomenon, in penetrating region T, than other color region overlayer 304 thicker thickness is arranged corresponding to the part of covering layer 306 of the 4th district (white area W), in the R of echo area, part of covering layer 304 and color region part of covering layer 304 corresponding to the 4th district (white area W) have equal thickness substantially, in other words, in penetrating region T, has projection 306 corresponding to the overlayer of the 4th district (white area W).
In order to form the overlayer of said structure shape, implement the sharp following method that adopts for one of the present invention: at first, on first substrate, form for example photosensitive material overlayer 304, thereafter, overlayer 304 is carried out multiexposure, multiple exposure technology, wherein the overall exposing number of times of the overlayer 304 of penetrating region T is than the overlayer more than 304 of echo area R, in addition, penetrating region T goes up and is last and corresponding to for example comprising red color area R than penetrating region T corresponding to the exposure frequency of the part of covering layer of the 4th district (white area W), blue region B, the exposure frequency of the part of the color region of green district G is few, follow-up, overlayer 304 is developed.
Fig. 6 A～6C discloses the tectal manufacture method of double pitch (dual gap) the semi-penetration semi-reflective LCD assembly of one embodiment of the invention, at first, please refer to Fig. 6 A, on first substrate, (do not illustrate) the blanket formula and apply for example overlayer of the photosensitive material of photoresist, cover first substrate and on thin-film transistor component, wherein in this embodiment, overlayer is positive photoresist.Next, all overlayers are carried out comprehensive exposure (exposed areas indicates with oblique line).
Follow-up, please refer to Fig. 6 B, again all overlayers are carried out comprehensive exposure.Then, please refer to Fig. 6 C, with mask cover penetrating region T corresponding to the outer part of covering layer in the 4th district (white area W) upper shed zone 602, and cover the overlayer that echo area R goes up all colours, and on the penetrating region T corresponding to three color region overlayers that for example comprise blue region B, green district G and red color area R, and the overlayer of 602 positions, open area, the 4th district exposes.According to said method, because the exposure frequency of the part of covering layer in the 4th district of penetrating region T lacks once than the exposure frequency of other regional part of covering layer, therefore, the thickness of the part of covering layer in the 4th district of penetrating region T is thicker than the part of covering layer of color region.
Fig. 7 A～7C discloses the tectal manufacture method of double pitch (dual gap) the semi-penetration semi-reflective LCD assembly of another embodiment of the present invention, at first, please refer to Fig. 7 A, on first substrate, (do not illustrate) the blanket formula and apply for example overlayer of the photosensitive material of photoresist, cover first substrate and on thin-film transistor component, wherein in this embodiment, overlayer is positive photoresist.Next, cover part of covering layer on the penetrating region R with mask, and the part of covering layer on the T of echo area is exposed.
Follow-up, please refer to Fig. 7 B, all overlayers are carried out comprehensive exposure.Then, please refer to Fig. 7 C, cover upper shed zone, the 4th district (white area W) 702 part of covering layer outward of penetrating region T with the mask light shield, and cover the overlayer that echo area R goes up all colours, and for example comprise blue region B, green on the penetrating region T are distinguished the overlayer of three color regions of G and red color area R, and the overlayer of 602 positions, open area, the 4th district exposes.According to said method, because the exposure frequency of the part of covering layer in the 4th district of penetrating region T lacks once than the exposure frequency of other regional part of covering layer, therefore, the thickness of the part of covering layer in the 4th district of penetrating region is thicker than the part of covering layer of color region.
Fig. 8 discloses the present invention LCD assembly and the manufacture method thereof of another embodiment again.At first, first substrate 800 is provided, this first substrate 800 can be array base palte, and the material of first substrate 800 comprises transparent material (for example glass, glass with lower alkali content, alkali-free glass etc.), flexible materials (for example plastics, polycarbonate, poly-methyl-prop vinegar acid methyl esters etc.), light tight material (for example pottery, wafer etc.) etc.First substrate 800 comprises the pixel region in order to display frame.
Next, on substrate, form a plurality of thin film transistor (TFT)s 808, in an embodiment of the present invention, the corresponding thin film transistor (TFT) 808 of each pixel, and each thin film transistor (TFT) 808 includes grid 802, channel layer (not illustrating), ohmic contact layer (not illustrating), source electrode 804 and drain electrode 806, the preferably, thin film transistor (TFT) 808 is bottom gate type (bottom-gate type) transistor, certainly, also can use the transistor (top gate type (top-gate type) for example of other type, etch-stop type (etching-stop type), or other transistor), and the material system that constitutes each thin film transistor (TFT) 808 comprise amorphous silicon, polysilicon, monocrystalline silicon, the combination of microcrystal silicon or above-mentioned material.That is to say, the material of channel layer (not illustrating) and ohmic contact layer (not illustrating) comprises the combination of amorphous silicon, polysilicon, monocrystalline silicon, microcrystal silicon or above-mentioned material, and ohmic contact layer (not illustrating) also is doped with N type adulterant (for example phosphorus, arsenic or other material) or P type adulterant (for example boron or other material), makes its behavior be similar to ohm property.Follow-up, on thin film transistor (TFT) 808 and substrate 800, form overlayer 807.
Follow-up, second substrate 810 with respect to first substrate 800 is provided, second substrate 810 can be colored filter substrate, and second substrate 810 can comprise corresponding to sub-pixel and for example comprises the color region in red color area, blue region, green district and the 4th district of white area for example.Next, on second substrate 810, form patterned photoresist layer, and define patterned photoresist layer for for example comprising red photoresist R at least three colored region in these zones respectively, the definition patterned photoresist layer is the 4th photoresist figure layer of for example transparent photoresist W in the colored patterned photoresist layer of blue photoresist B and green photoresist G and at least one the 4th zone in these zones, for instance, with general lithography process definition photoresist, second substrate 810 with respect to the red color area of first real estate 801 on form red photoresist R, then, with general lithography process definition photoresist, second substrate with respect to the blue region of first real estate 801 on form blue photoresist B, with general lithography process definition photoresist, second substrate 810 with respect to the green district of first real estate 801 on form green photoresist G, with general lithography process definition photoresist, second substrate 810 with respect to the white area of first real estate 801 on form transparent photoresist W.
Be noted that, the 4th photoresist figure floor of for example transparent photoresist W is inserted the 4th district on first substrate, for example comprise red photoresist R and remove to be positioned at method for photolithography, transparent photoresist on the colored patterned photoresist layer of blue photoresist B and green photoresist G, like this, the 4th photoresist figure floor of for example transparent photoresist W only is positioned in the 4th district of white area for example, can overcome surface tension and mechanics influence, cause another overlayer in white pixel and redness, green, blue pixel produces the problem of offset.
Then, on the 4th photoresist figure layer of colored patterned photoresist layer that for example comprises red photoresist W, blue photoresist B, green photoresist G and for example transparent photoresist W, apply another layer overlayer 803, like this, can obtain having smooth and without offset cover surface 805.Follow-up, insert liquid crystal layer 830 at first substrate 800 and 810 of second substrates, to finish the making of display panels.
According to the foregoing description, the present invention is mainly in single space (single-gap) and double pitch (dual-gap) semi-penetration semi-reflection type display, adjust at the penetrating region exposure frequency, make the cover thickness of white area greater than the cover thickness in other color R, G, B district, the echo area is because need to make projection, can't see through exposure and improve the echo area overlayer separately, therefore the overlayer of echo area keeps homogeneous thickness, and it can be by the circuit control break reflection characteristic of for example table look-up (Look-Up-Table) to solve yellow partially problem.
Therefore, according to the foregoing description, the present invention can solve the excessive yellow partially colour cast problem of panel that causes of white area offset, to improve the optical characteristics of panel.
Though the present invention discloses as above with preferred embodiment; but it is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; can make many changes and retouching, so protection scope of the present invention should be as the criterion with the scope of claims definition.
Claims (7)
1. the manufacture method of a display comprises:
First substrate is provided, and it has a plurality of pixels, and each described pixel is divided into a plurality of sub-pixels;
Second substrate is provided, and it is with respect to this first substrate, and this second substrate is divided into a plurality of zones, and in the described zone at least three be the 4th zone for colored region and at least one, and described zone corresponds to described sub-pixel;
On this second substrate, form patterned photoresist layer, and define in three colored region of this patterned photoresist layer in described zone to colored patterned photoresist layer respectively at least and in described at least one the 4th zone, be the 4th photoresist figure layer;
On described patterned photoresist layer, form overlayer; And
Between this first substrate and this second substrate, apply liquid crystal layer.
2. the manufacture method of display as claimed in claim 1, wherein this overlayer has smooth surface substantially.
3. the manufacture method of display as claimed in claim 1 also comprises:
On this first substrate, form another overlayer.
4. the manufacture method of display as claimed in claim 3, wherein this another overlayer has smooth surface substantially.
5. the manufacture method of display as claimed in claim 3, wherein described these overlayers on this first substrate and this second substrate have smooth surface substantially.
6. the manufacture method of display as claimed in claim 1, wherein this patterned photoresist layer has smooth surface substantially.
7. the manufacture method of display as claimed in claim 1, wherein on this second substrate, form patterned photoresist layer, and to define at least three colored region of this patterned photoresist layer in described zone respectively be colored patterned photoresist layer and be that the step of the 4th photoresist figure layer comprises in described at least one the 4th zone:
On this second substrate, apply the photoresist layer; And
This photoresist layer of patterning is that colored patterned photoresist layer and described at least one the 4th zone are the 4th photoresist figure layer in order at least three colored region that define in regular turn in the described zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100035039A CN101271214A (en) | 2006-05-15 | 2006-05-15 | Display equipment production method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100035039A CN101271214A (en) | 2006-05-15 | 2006-05-15 | Display equipment production method |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100827293A Division CN100403106C (en) | 2006-05-15 | 2006-05-15 | Semi-transmissive semi-reflective display and manufacturing method thereof, display manufacturing method |
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| CN101271214A true CN101271214A (en) | 2008-09-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966718A (en) * | 2015-05-04 | 2015-10-07 | 深圳市华星光电技术有限公司 | Manufacturing method of AMOLED backboard and AMOLED backboard structure |
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2006
- 2006-05-15 CN CNA2008100035039A patent/CN101271214A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966718A (en) * | 2015-05-04 | 2015-10-07 | 深圳市华星光电技术有限公司 | Manufacturing method of AMOLED backboard and AMOLED backboard structure |
| CN104966718B (en) * | 2015-05-04 | 2017-12-29 | 深圳市华星光电技术有限公司 | The preparation method and its structure of AMOLED backboards |
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