CN101269834B - Method for producing nano-ITO powder with plasma electrical arc one-step method - Google Patents
Method for producing nano-ITO powder with plasma electrical arc one-step method Download PDFInfo
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- CN101269834B CN101269834B CN2008100584089A CN200810058408A CN101269834B CN 101269834 B CN101269834 B CN 101269834B CN 2008100584089 A CN2008100584089 A CN 2008100584089A CN 200810058408 A CN200810058408 A CN 200810058408A CN 101269834 B CN101269834 B CN 101269834B
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- 239000000843 powder Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000002994 raw material Substances 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000010891 electric arc Methods 0.000 claims abstract description 4
- 239000011229 interlayer Substances 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims abstract description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- 230000002269 spontaneous effect Effects 0.000 claims description 3
- 230000000007 visual effect Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 5
- 230000012010 growth Effects 0.000 abstract description 2
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000003801 milling Methods 0.000 abstract 1
- 238000010942 self-nucleation Methods 0.000 abstract 1
- 241000370738 Chlorion Species 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000000975 co-precipitation Methods 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000005194 fractionation Methods 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000010335 hydrothermal treatment Methods 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000009272 plasma gasification Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Abstract
The invention relates to a method using a plasma arc one step method to prepare nano-size ITO powder. The method is characterized in that In-Sn alloy is continuously sent into a pot of a plasma reaction chamber by a feeding fixed point and fixed amount method, and the plasma reaction chamber uses Ar as a plasma gas, wherein, the working voltage ranges from 30 to 60 V, and the working current ranges from 100 to 400 A; alloyed material is used as a positive pole in the plasma reaction chamber, and a high igniter inflames between the positive pole and the negative pole of a nozzle to form an electric arc; inert gas around ionization forms stable plasma; raw materials are heated and melted by high temperature plasma to evaporate to form metal vapor which reacts with oxygen, and a great temperature grade is formed under the function of flowing water cooling of an inter layer of a reactor, thereby resulting in a high supersaturated zone in the metal vapor; through self nucleation, condensation and growth in a gas phase, nano-size to particle is formed. The nano-size ITO powder made by the method has the advantages of regular grain shape and high powder purity, and the method can realize continuous feeding, continuous reaction, and continuous milling. The efficiency is high, and compared with other methods, the method is easier to realize mass production.
Description
Technical field
The present invention relates to the preparation method of a kind of high purity indium tin oxide (ITO) nanometer powder, belong to a kind of in the evaporating method powder process.
Technical background
Indium tin oxide (Indium Tin Oxides, english abbreviation are ITO) nanometer powder is meant 90% In
2O
3With 10% SnO
2The oxide material of forming is a kind of novel specific function material, the deep processing new high-tech product of indium metal.Ito powder is mainly used in preparation ITO target and ito thin film.Ito thin film has the visible light transmissivity height, the reflectivity height in infrared light district, the specific absorption height of ultraviolet region, good electrical conductivity, good matrix tack and chemical stability.The above-mentioned characteristic of ITO has a very wide range of applications it in a lot of fields, becomes the transparent conductive material that present stage has important application and researching value.Usually, have only high-quality ito powder just can prepare the ITO target of perfect performance.Therefore, the development of ITO nanometer powder is one of focus of domestic and international material subject research.
(NONFERROUS METALS such as the old generation post of Central South University, 2000,52, be raw material 88-90) with indium metal and tin, be equipped with nano-ITO powder by the spray burning legal system, this method is highly efficient in productivity, is fit to produce in enormous quantities, and the powder purity of preparing is also very high, but need under the high pressure of 10-15MPa, atomize, this demand to equipment is higher, and operation has certain danger, technological operation complexity.People such as Chi-Hwan (Materials Latters 61 (2007) 1701-1703) utilize sol-gel method successfully to prepare the powder of particle diameter in the 16-33 nanometer, (Scripta Mater such as Nam, 2001,44,2047-2050) make the nano level ito powder with coprecipitation method.Sol-gel method and coprecipitation method are the methods of using always for preparing nano-ITO powder, but for sol-gel method, and influence factor is many, all can influence colloidal formation as the concentration of solution, temperature, pH value etc.; And the powder particle particle diameter that coprecipitation method makes is inhomogeneous.(J.Am.Cerama, Soc, 2001 such as Yanagisawa, 84, be that raw material adopts coprecipitation method to obtain the oxyhydroxide presoma of indium, tin with the villaumite 251-253), carry out repetitive scrubbing then and remove chlorion, carry out hydrothermal treatment consists again, heat-treat at last and obtain the ITO powder.In this method, the removal of chlorion is a big key, if the residual meeting of chlorion has influence on the sintering of ITO target, yet, the removal of chlorion is a very time-consuming technological process, often needs to consume a large amount of water, electric power, also can cause a large amount of losses of product simultaneously, the products production cost is increased, and cause serious environmental to pollute.
CN1978323A discloses " a kind of preparation method of high sintering activity ITO powder ", and it is to utilize the organic and inorganic salt of the alkoxide of indium and tin and other to prepare the high sintering activity ITO powder that particle diameter is 6～25 nanometers.Though this method does not directly utilize muriate to be prepared, it is to carry out hydro-thermal reaction 3～24 hours in 130～260 ℃ in reactor that an operation is arranged in this method, and overlong time causes the excessive cycle of entire reaction.CN1301911C discloses " the ito powder preparation method of solid solution tin in a kind of Indium sesquioxide ", it is to be indium nitrate and tin chloride mixing solutions raw material, utilize spray heating decomposition to prepare the nano-ITO powder, the powder that this method makes is for spherical, but, can influence the sintering of target equally owing to contain chlorion.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, provide a kind of grain size little, be evenly distributed, the specific surface area height, the purity height, technical process is simple, can control alloy fractionation and segregation, realize continuous-feeding, successive reaction, powder process continuously, a step evaporating method of high-efficiency production of nano level ito powder.
Technical scheme of the present invention is to utilize the plasma arc single stage method to prepare nano-ITO powder.
Feature of the present invention is: with weight ratio In: Sn=9.04: 1 metal In, Sn is mixed with the alloy liquation as reaction raw materials, after connecting power supply, the In-Sn alloy is sent in the crucible of plasma reaction chamber continuously by the feed-type of site-directed quantitative, said plasma reaction chamber is the plasma body working gas with Ar, have with the flowing water is the intercalated water sleeve of heat-eliminating medium, and be connected with pressurized air, its operating voltage is 30～60v, working current is 100～400A, said plasma reaction chamber with the alloy raw material in the crucible as positive pole, between positive pole and plasma gun nozzle negative pole, ignite and form electric arc by the high frequency points burner, rare gas element around the ionization, form stable plasma body, raw material is by the high-temperature plasma heat fused, evaporation forms metallic vapor, react with oxygen, under flowing water in the reactor interlayer and the pressurized air cooling effect, form very big thermograde, cause supersaturation district very high in the metallic vapor, and from gas phase spontaneous nucleation, cohesion, grow into the nano-ITO particulate, and be deposited in the collecting chamber; In this process, the feed-type of said site-directed quantitative, be meant by an electrodeless continuous adjustable controller, give the alloy of equal amts in the anode spot district at every turn, the size of the concrete numerical value visual response chamber of the alloy amount of being given and power and decide, can be enough to be gasified be as the criterion with the amount of giving, can realize that alloy is given at regular time and quantity.In the present invention, the purity of raw material In in the said In-Sn alloy and Sn is 99.99%.
Compare with prior art, the present invention has following advantage or positively effect:
1, the nano-ITO powder footpath that makes is between 25～65nm, and granule-morphology is even sphere, good dispersity.
2, in order to improve vaporization efficiency, the present invention adopts fixed point, quantitative feed-type, makes the Btu utilization maximization of plasma arc, has strengthened gasification result, provide essential condition for impelling the steam forming core and effectively suppressing nucleus growth, realized control easily granularity.
3, utilize rare gas element protection; make that the steam in the reaction chamber is pure; the powder purity height of preparing; good dispersity; provide raw material for preparing high-quality ITO target; fundamentally solved owing to be rich in the chlorine element in the ito powder, sintering process and hot isostatic pressing method prepare the serious rimose problem of the target that occurs in the process of ITO target.
4, this special site-directed quantitative feed-type of the present invention, realized the successive reaction in the reaction chamber, powder process continuously, and when preparation alloy (compound) powder, can metallic fractionation and segregation problem, single step reaction just can be collected the finished product ito powder, provides a brand-new approach for the industrial gasification legal system is equipped with the nano-ITO powder.
Description of drawings
Fig. 1 is equipped with the process flow sheet of nanometer TIO powder for plasma gasification legal system.
Fig. 2 amplifies 300,000 times transmission electron microscope picture for embodiment 1 prepared powder.Can see that on scheming this powder is a particle diameter 20-50 nano particle, and regular shape, crystalline structure is good, and is scattered.Because the small-size effect of nanometer powder, surface effects makes it that agglomeration be arranged.As can be seen, particle is a cubic structure, has the feature of crystallogeometry from the figure.
Fig. 3 is the X-ray diffractogram of the prepared powder of embodiment 1.On scheming, can see, the peak position of 5 standard diffraction peaks occur 20 °～80 ° scopes, contrast PDF card as can be known, spectral line is In
2O
3The crystalline diffract spectral line does not find to have SnO
2And the spectral line of metal Sn and other clutter, this powder is the ito powder of Indium sesquioxide solid solution stannic oxide.On the figure, the X-ray diffraction peak is very sharp-pointed, illustrates that TIO powder particles crystal shape is better, and this also is consistent with the result that Fig. 3 is drawn.
The present invention will be further described with embodiment below.
Embodiment
Embodiment 1
Take by weighing pure metal In100g, (weight ratio is In: Sn=9.04 to Sn11.062g: 1) be mixed with the alloy liquation, with Ar as the plasma body working gas, control voltage is 60V, electric current is 100A, with the speed about 1.5g/min alloy is sent in the plasma-reaction-chamber crucible, with alloy raw material as positive pole, between positive pole and plasma gun nozzle negative pole, ignite and form electric arc by the high frequency points burner, rare gas element around the ionization, form stable plasma body, raw material is by the high-temperature plasma heat fused, evaporation forms metallic vapor, reacts with oxygen.Owing in the interlayer of reactor, cool off, and have pressurized air air-cooled, form very big thermograde, cause supersaturation district very high in the metallic vapor with flowing water, and from gas phase spontaneous nucleation, condense, grow into nanoparticle, enter collecting chamber.
Embodiment 2
Basic identical with embodiment 1, just the plasma-reaction-chamber operating voltage is 30V, and electric current is 400A, and delivery rate is 2.5g/min, and other situation is identical with embodiment 1.
Embodiment 3
Basic identical with embodiment 1, just the plasma-reaction-chamber operating voltage is 40V, and electric current is 300A, and delivery rate is that other situation of 2.5g/min is identical with embodiment 1.
Embodiment 4
Basic identical with embodiment 1, just the plasma-reaction-chamber operating voltage is 50V, and electric current is 200A, and delivery rate is that other situation of 2.0g/min is identical with embodiment 1.
Claims (2)
1. a plasma arc single stage method prepares the method for nano-ITO powder, it is characterized in that: with weight ratio In: Sn=9.04: 1 metal In, Sn is mixed with the alloy liquation as reaction raw materials, after connecting power supply, the In-Sn alloy is sent in the crucible of plasma reaction chamber continuously by the feed-type of site-directed quantitative, said plasma reaction chamber is the plasma body working gas with Ar, have with the flowing water is the intercalated water sleeve of heat-eliminating medium, and be connected with pressurized air, its operating voltage is 30～60v, working current is 100～400A, said plasma reaction chamber with the alloy raw material in the crucible as positive pole, between positive pole and plasma gun nozzle negative pole, ignite and form electric arc by the high frequency points burner, rare gas element around the ionization, form stable plasma body, raw material is by the high-temperature plasma heat fused, evaporation forms metallic vapor, react with oxygen, under flowing water in the reactor interlayer and the pressurized air cooling effect, form very big thermograde, cause supersaturation district very high in the metallic vapor, and from gas phase spontaneous nucleation, cohesion, grow into the nano-ITO particulate, and be deposited in the collecting chamber; In this process, the feed-type of said site-directed quantitative, be meant by an electrodeless continuous adjustable controller, give the alloy of equal amts in the anode spot district at every turn, the size of the concrete numerical value visual response chamber of the alloy amount of being given and power and decide, can be enough to be gasified be as the criterion with the amount of giving, can realize that alloy is given at regular time and quantity.
2. according to the method for claim 1, it is characterized in that raw material In in the said In-Sn alloy and the purity of Sn are 99.99%.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102367519A (en) * | 2011-09-16 | 2012-03-07 | 中国船舶重工集团公司第七二五研究所 | Efficient recovering method for waste indium tin oxide (ITO) targets |
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| CN102190288A (en) * | 2010-03-07 | 2011-09-21 | 张镜 | Technology (direct method) for processing nano particles on surface of object |
| CN102001699A (en) * | 2010-12-08 | 2011-04-06 | 上海交通大学 | Preparation method of nano indium oxide |
| CN102627454B (en) * | 2012-04-24 | 2013-12-11 | 西北稀有金属材料研究院 | Preparation method for indium tin oxide (ITO) powder and preparation method for ITO sintering body |
| CN104843771A (en) * | 2015-04-24 | 2015-08-19 | 柳州百韧特先进材料有限公司 | Method for recovering and preparing nanometer TIO powder from ITO target wastes |
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| CN111958090A (en) * | 2020-08-12 | 2020-11-20 | 苏州鑫之博科技有限公司 | Plasma arc material increase device and material increase method |
| CN112479682A (en) * | 2020-12-15 | 2021-03-12 | 株洲火炬安泰新材料有限公司 | Preparation method of environment-friendly and efficient ITO target material |
| CN113387682A (en) * | 2021-05-24 | 2021-09-14 | 芜湖映日科技股份有限公司 | ITO target waste target recycling method |
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| CN116986627B (en) * | 2023-08-14 | 2024-02-09 | 苏州裕鑫纳米材料技术有限公司 | Method for preparing high-dispersion nano tin oxide powder by microwave method |
-
2008
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Non-Patent Citations (1)
| Title |
|---|
| 戴永年等.7.2真空中气相物质固化成粉.《有色金属材料的真空冶金》.冶金工业出版社,2000,第411页. * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102367519A (en) * | 2011-09-16 | 2012-03-07 | 中国船舶重工集团公司第七二五研究所 | Efficient recovering method for waste indium tin oxide (ITO) targets |
| CN102367519B (en) * | 2011-09-16 | 2013-06-05 | 中国船舶重工集团公司第七二五研究所 | Efficient recovering method for waste indium tin oxide (ITO) targets |
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