CN101260562A - Spontaneous nucleation growth method for thallium bromide single-crystal - Google Patents
Spontaneous nucleation growth method for thallium bromide single-crystal Download PDFInfo
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- CN101260562A CN101260562A CNA2007101689469A CN200710168946A CN101260562A CN 101260562 A CN101260562 A CN 101260562A CN A2007101689469 A CNA2007101689469 A CN A2007101689469A CN 200710168946 A CN200710168946 A CN 200710168946A CN 101260562 A CN101260562 A CN 101260562A
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Abstract
The invention provides a method for growing thallium bromide monocrystal by spontaneous nucleation, comprising the following steps of: 1) filling a thallium bromide material into a cylindrical ampoule with diameter of 8 to 15mm, vacuumizing, sealing, and processing one end of the ampoule into a cone with the cone angle between 15 and 45 degrees; 2) placing the ampoule into a vertical tube furnace with the conical end towards the bottom of the furnace, heating the vertical tube furnace to enable the temperature of the thallium bromide material in the conical tip not to be lower than the melting point of thallium bromide, raising the temperature from the conical tip upward to the inside of a top area of the thallium bromide material with the temperature gradient between 1.0 and 1.5 DEG C/mm, and then, insulating; 3) reducing the temperature of the tube furnace to between 450 and 460 DEG C at the speed between 1 and 5 DEG C/h; and 4) cooling the ampoule to room temperature along with the furnace. Because a heater and the ampoule are not required to be moved, the invention saves the complicated mechanical transmission device, simplifies the technology and reduces cost. The ampoule and the heater are both fixed, the temperature field is stable, heat inside the crystal and molten mass is uniformly distributed, a convex growth interface can be easily acquired, and the thallium bromide with good integrity and considerable size can be grown.
Description
Technical field
The invention belongs to the single crystal growing technical field, be specifically related to a kind of growth method of thallium bromide single-crystal.
Background technology
Sigmatron, gamma-ray detection are one of most crucial technology of space science technical field.Classical detector semiconductor materials such as Ge, Si commonly used must be worked under low temperature (about 70K) condition, and this gives to use in the space has increased many difficulties and cost.Though semiconductor materials such as Kai Fa CdZnTe, CdTe have excellent characteristic about-30 ℃ in recent years, with super band, the hole transport capability of material is limited in hard X ray, is difficult to be fit to sigmatron, gamma-ray detection requirement.Thallium bromide material have higher ordination number (Tl:81, Br:35), bigger density (7.5g/cm
3), bigger energy gap (2.68ev) and bigger electron hole mobility, thereby be a kind of very promising room temperature sigmatron, gamma-ray detection modulator material, caused domestic and international researchist's interest.Therefore yet performances such as the stability of thallium bromide crystal detector work and energy resolution are subjected to the restriction of initial crystalline material, how to obtain the key issue that high quality, large-sized thallium bromide single-crystal become the research of thallium bromide gamma ray detector.
At present, the typical growth method of thallium bromide single-crystal has mobile crucible (as Bridgman method) or traveling heater (as mobile zone melting method) both at home and abroad.These methods all belong to the scorification growing method, and they realize the growth of thallium bromide single-crystal respectively by traveling heater and growth ampoule.The essence of scorification crystal growth is to make the rearrangement of carrying out atom or molecule on the interface of nucleus (crystal of seed crystal or sporadic nucleation) and melt form single crystal.Thereby it is very strict to the requirement in temperature field, be exactly specifically: only melt temperature is lower than zero pour near nucleus, make the interface of growing be in supercooled state, promptly crossing the cold-zone must concentrate in the narrow and small scope of near interface, and the rest part of melt is in superheat state, to avoid occurring the unstable of new nucleus and growth interface.Mobile zone melting method is that the rod-like polycrystal ingot is melted a narrow district, and it is solid-state that rest part keeps, and traveling heater makes this melting zone move along the length direction of crystal ingot then, the rest part of whole crystal ingot is melted successively after crystallization again.During this method growing crystal, there is very big thermograde along its length in crystal, mentioning in the document " Improved spectrometric characteristics of thallium bromide nuclear radiationdetectors.Nuclear Instruments and Methods in Physics Research A; 428 (1999); 372-378 " when preparing thallium bromide single-crystal as K.Hitomi etc. with zone melting method, raw material length is 150mm, the melting zone width is generally about 10mm, the melting zone temperature is set to 500 ℃, the well heater translational speed is 10mm/h, in crystal growing process, have only the raw material of 10mm to be in molten state, and other parts are in outside the well heater scope, and its temperature is more much lower than melting zone temperature.When M.S.Kouznetsov etc. propose with the horizontal zone-melting technique growing single-crystal in document " Development of the technology for growing TlBr detector crystals.NuclearInstruments and Methods in Physics Research A; 531 (2004) 174-180 ", because the ununiformity in temperature field can cause defective increase in the crystal.
Comparatively speaking, Bridgman method more helps growing large-size, good uniformity, the higher crystal of quality.Bridgman method is in the monocrystal growing furnace of two warm areas, effect by thermal baffle, make the growth furnace upper temp than high 30-40 ℃ of thallium bromide fusing point (460 ℃), and temperature of lower remains on 280 ℃-300 ℃, mechanical drive control crucible by precision slowly descends, make whole melt lentamente by zero pour, crystallization forms monocrystalline.Therefore, compare with zone melting method, the thallium bromide single-crystal that Bridgman method obtains is because less in the thermal stresses of length direction, and crystal mass is higher.Yet, according to M.S.Kouznetsov etc. in the document " Development of the technology for growing TlBrdetector crystals.Nuclear Instruments and Methods in Physics Research A; 531 (2004) 174-180 " studies show that with the Bridgman method growing single-crystal time, stove district upper temp is still than about the high 100-150 of temperature of lower ℃, like this, still there is very big thermograde along its length in crystal, have very big stress between crystal and the crucible, the disappearance of this stress need or form defective by the lattice slippage and eliminate.Because thallium bromide has higher plasticity, can form lattice deformability, finally influences the crystalline quality.In addition, during these two kinds of method growing crystals, all need accurate mechanical drive, apparatus expensive.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art part, a kind of method of the thallium bromide single-crystal of growing is provided, do not moving under the situation of growth ampoule and well heater, spontaneous nucleation growth goes out high-quality thallium bromide single-crystal.
A kind of spontaneous nucleation growth method for thallium bromide single-crystal, concrete steps are as follows:
(1) the thallium bromide raw material is packed into diameter is the cylindrical ampoule of 8-15mm, vacuumize, and sealing, and ampoule one end is processed into cone angle is 15-45 ° taper shape;
(2) ampoule is put into vertical tube furnace, the conical end of ampoule is pointed to furnace bottom, the tube furnace heating, make thallium bromide raw material pointed cone place temperature be not less than the thallium bromide fusing point, and from pointed cone upwards the temperature to the top area of thallium bromide raw material increase insulation with the thermograde of 1.0-1.5 ℃/mm;
(3) tube furnace slowly cools to 450-460 ℃ with the speed of 1-5 ℃/h;
(4) ampoule naturally cools to room temperature with stove.
The temperature rise rate of tube furnace heating is 250-300 ℃/h in the described step (2), and soaking time is 5-15h, and described ampoule is made by quartz.
The present invention has following advantage:
(1) in whole crystal growing process, come mobile growth interface by slow cooling, need not traveling heater and quartz ampoule, saved the complicated mechanical transmission mechanism, greatly simplified technology, reduced cost.
(2) the residing thermograde of crystal is all littler than zone melting method and Bridgman method, has reduced the thermal stresses of crystal growth.
(3) in whole crystal growing process, quartz ampoule and process furnace are all fixing, and temperature is stable, and crystal and molten mass internal heat distribution uniform more easily obtain the growth interface of convex.Therefore, in this way can growth phase when the integrity of size thallium bromide single-crystal preferably.
(4) adopt suitable quartz ampoule can eliminate unnecessary nucleus, obtain the monocrystalline of sporadic nucleation, for other growing method provides high-quality seed crystal.
Description of drawings
Fig. 1 is thallium bromide single-crystal growth cell configuration figure of the present invention;
Fig. 2 is a quartz ampoule structure iron of the present invention;
Fig. 3 is that 370mm, furnace diameter are vertical tube furnace axial temperature field distribution schematic diagram when holding temperature is 520 ℃ of 40mm for axial length;
Fig. 4 is that 370mm, furnace diameter are vertical tube furnace axial temperature field distribution schematic diagram when holding temperature is 500 ℃ of 40mm for axial length;
When Fig. 5 is respectively 500 ℃, 490 ℃, 480 ℃, 470 ℃, 460 ℃ for holding temperature, apart from the axial temperature field distribution curve synoptic diagram of vertical tube furnace in the 80-180mm scope of vertical tube furnace lower end;
Fig. 6 is the XRD diffracting spectrum of the thallium bromide single-crystal sample of embodiment 1 preparation.
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples:
As shown in Figure 1, the growing apparatus that is applicable to thallium bromide single-crystal growth method of the present invention comprises vertical tube furnace 1, ampoule 3 and fixed mechanism 5.Vertical tube furnace 1 adopts the resistance wire mode to heat, and its temperature is surveyed by thermopair 2.Place the ampoule 3 that thallium bromide raw material 4 is housed in vertical tube furnace 1, ampoule 3 is made by quartz, and its top is that diameter D is the cylindrical of 8-15mm, and the lower section is that cone angle is 15-45 ° a taper shape.Conical design is in order to be beneficial to the thallium bromide molten mass in temperature-fall period, in the at first sporadic nucleation of pointed cone place, and in process of growth thereafter, " how much eliminate rule " followed according to single crystal growing, eliminate unnecessary nucleus, obtain quality monocrystalline preferably.The top of ampoule 3 is connected and fixed mechanism 5, and the other end of fixed mechanism 5 connects the external stability point, and it is used for fixing the position of ampoule 3 in vertical tube furnace 1, and fixed mechanism 5 can adopt copper wire, steel wire and nickel wire or the like among the present invention.The well heater of vertical tube furnace 1 and ampoule 3 positions are all fixing.The heating vertical tube furnace, bromizate the whole fusions of thallium, slowly reduce furnace temperature, make crystal growth interface move up and realize single crystal growing by the bottom of growth ampoule lentamente, be lower than the Tc of thallium bromide when whole melt temperature after, melt all solidifies, and finishes crystal growth, last furnace cooling.
Following examples are 370mm with the axial length, and furnace diameter is that the vertical tube furnace of 40mm is the example explanation.
With the about 5g of the thallium bromide raw material quartz ampoule of packing into, vacuumize the sealing quartz ampoule.The quartz ampoule size is as follows: wall thickness is 1mm, and total length is 120mm, and the top cylindrical inner diameter is 8mm, and lower cone shape part tapering is 28 °.Adopt copper wire that quartz ampoule is fixed in the vertical tube furnace, make quartz ampoule conical portion pointed cone apart from vertical tube furnace lower end 90mm.Being raised to temperature with the heat-up rate of 250 ℃/h by room temperature is 500 ℃, insulation 15h.As shown in Figure 4 this moment the quartz ampoule present position 476 ℃ of minimum temperatures, the axial-temperature gradient that makes progress in 80mm to the 130mm zone from the vertical tube furnace lower end satisfies 1.0-1.5 ℃/mm.As shown in Figure 5, along with the reduction of vertical tube type furnace temperature, 460 ℃ of isothermal positions are moved up by the bottom of quartz ampoule.Lower the temperature most 458 ℃ with the cooling rate of 1 ℃/h then, finish crystal growing process.Last furnace cooling, obtaining diameter is 8mm, and the thallium bromide single-crystal of the about 8mm of equal-diameter part length, accompanying drawing 6 are the XRD diffracting spectrum of this sample, and two diffraction peaks correspond respectively to crystalline (110) face and (220) face, show that the crystal that grows is a single crystal.
With the about 6g of the thallium bromide raw material quartz ampoule of packing into, vacuumize the sealing quartz ampoule.The quartz ampoule size is as follows: wall thickness is 1mm, and total length is 120mm, and the top cylindrical inner diameter is 10mm, and lower cone shape part tapering is 19 °.Adopt steel wire that quartz ampoule is fixed in the vertical tube furnace, make quartz ampoule distance from bottom vertical tube furnace lower end 80mm.Being raised to temperature with the heat-up rate of 250 ℃/h by room temperature is 520 ℃, insulation 5h, as shown in Figure 3 this moment the quartz ampoule present position 475 ℃ of minimum temperatures, axial-temperature gradient in 80mm to 130mm zone, vertical tube furnace lower end satisfies 1.0-1.5 ℃/mm, and as shown in Figure 5, along with the reduction of vertical tube type furnace temperature, 460 ℃ of isothermal positions move up.Lower the temperature most 450 ℃ with the cooling rate of 3 ℃/h then, finish crystal growing process.Last furnace cooling, obtaining diameter is 10mm, the thallium bromide single-crystal of the about 8mm of equal-diameter part length.
With the about 10g of the thallium bromide raw material quartz ampoule of packing into, vacuumize the sealing quartz ampoule.The quartz ampoule size is as follows: wall thickness is 1mm, and total length is 120mm, and the top cylindrical inner diameter is 15mm, and lower cone shape part tapering is 35 °.Adopt nickel wire that quartz ampoule is fixed in the vertical tube furnace, make quartz ampoule distance from bottom vertical tube furnace lower end 80mm.Being raised to the vertical tube furnace electric thermo-couple temperature with the heat-up rate of 300 ℃/h by room temperature is 520 ℃, insulation 10h, as shown in Figure 3 this moment the quartz ampoule present position 475 ℃ of minimum temperatures, the axial-temperature gradient in 80mm to 130mm zone, vertical tube furnace lower end satisfies 1.0-1.5 ℃/mm.Lower the temperature most 450 ℃ with the cooling rate of 5 ℃/h then, finish crystal growing process.Last furnace cooling, obtaining diameter is 15mm, the thallium bromide single-crystal of the about 6mm of equal-diameter part length.
The position of quartz ampoule in vertical tube furnace distributed by the axial temperature field of vertical tube furnace when being incubated and determines, settle the standard is to make thallium bromide raw material pointed cone place temperature be not less than the thallium bromide fusing point, and the temperature that makes progress to the top area of thallium bromide raw material from pointed cone increases gradually, and its thermograde is 1.0-1.5 ℃/mm.
Claims (3)
1, a kind of spontaneous nucleation growth method for thallium bromide single-crystal, concrete steps are as follows:
(1) the thallium bromide raw material is packed into diameter is the cylindrical ampoule of 8-15mm, vacuumize, and sealing, and ampoule one end is processed into cone angle is 15-45 ° taper shape;
(2) ampoule is put into vertical tube furnace, the conical end of ampoule is pointed to furnace bottom, the tube furnace heating, make thallium bromide raw material pointed cone place temperature be greater than or equal to the thallium bromide fusing point, and from pointed cone upwards the temperature to the top area of thallium bromide raw material increase insulation with the thermograde of 1.0-1.5 ℃/mm;
(3) tube furnace slowly cools to 450-460 ℃ with the speed of 1-5 ℃/h;
(4) ampoule naturally cools to room temperature with stove.
2, a kind of spontaneous nucleation growth method for thallium bromide single-crystal according to claim 1 is characterized in that, the temperature rise rate of tube furnace heating is 250-300 ℃/h in the described step (2), and soaking time is 5-15h.
3, a kind of spontaneous nucleation growth method for thallium bromide single-crystal according to claim 1 and 2 is characterized in that, described ampoule is made by quartz.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104047047A (en) * | 2014-06-09 | 2014-09-17 | 北京雷生强式科技有限责任公司 | Horizontal growth device and growth method of phosphorus silicon cadmium mono-crystal |
| CN105483825A (en) * | 2015-12-11 | 2016-04-13 | 华中科技大学 | Preparation method of bromine-lead-cesium single crystals |
| CN106062258A (en) * | 2014-02-27 | 2016-10-26 | 株式会社日立制作所 | Crucible for crystal growth, crystal growth apparatus provided therewith, and method for growing crystals |
| CN109112627A (en) * | 2018-09-30 | 2019-01-01 | 华中科技大学 | A method of improving bromine lead caesium monocrystalline resistivity |
| CN109750348A (en) * | 2018-11-22 | 2019-05-14 | 北京滨松光子技术股份有限公司 | A kind of growing method and equipment of radiation detection thallium bromide room temperature semiconductor monocrystalline |
| CN110512273A (en) * | 2019-08-07 | 2019-11-29 | 华中科技大学 | A method of improving monocrystalline crystalline quality |
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2007
- 2007-12-19 CN CNB2007101689469A patent/CN100516318C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106062258A (en) * | 2014-02-27 | 2016-10-26 | 株式会社日立制作所 | Crucible for crystal growth, crystal growth apparatus provided therewith, and method for growing crystals |
| CN104047047A (en) * | 2014-06-09 | 2014-09-17 | 北京雷生强式科技有限责任公司 | Horizontal growth device and growth method of phosphorus silicon cadmium mono-crystal |
| CN104047047B (en) * | 2014-06-09 | 2017-03-15 | 北京雷生强式科技有限责任公司 | A kind of horizontal growth device of phosphorus silicon Cd monocrystal and growing method |
| CN105483825A (en) * | 2015-12-11 | 2016-04-13 | 华中科技大学 | Preparation method of bromine-lead-cesium single crystals |
| CN105483825B (en) * | 2015-12-11 | 2018-09-25 | 华中科技大学 | A kind of bromine lead caesium method for preparing single crystal |
| CN109112627A (en) * | 2018-09-30 | 2019-01-01 | 华中科技大学 | A method of improving bromine lead caesium monocrystalline resistivity |
| CN109112627B (en) * | 2018-09-30 | 2020-05-19 | 华中科技大学 | Method for improving resistivity of cesium lead bromide single crystal |
| CN109750348A (en) * | 2018-11-22 | 2019-05-14 | 北京滨松光子技术股份有限公司 | A kind of growing method and equipment of radiation detection thallium bromide room temperature semiconductor monocrystalline |
| CN110512273A (en) * | 2019-08-07 | 2019-11-29 | 华中科技大学 | A method of improving monocrystalline crystalline quality |
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