CN101246942A - Light emitting diode and laser and its production method - Google Patents
Light emitting diode and laser and its production method Download PDFInfo
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- CN101246942A CN101246942A CNA2008100524849A CN200810052484A CN101246942A CN 101246942 A CN101246942 A CN 101246942A CN A2008100524849 A CNA2008100524849 A CN A2008100524849A CN 200810052484 A CN200810052484 A CN 200810052484A CN 101246942 A CN101246942 A CN 101246942A
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Abstract
The present invention provides a LBD, a laser and a producing method thereof. Epitaxial growth of LBD and laser on single crystal silicon film quartz substrate or single crystal silicon film quartz substrate deposited buffer layer. Semiconductor LBD structure comprises of single crystal silicon film bonded quartz substrate, single silicon film electrode layer formed on quartz substrate, N layer epitaxial grown on LED of single silicon electrode layer and LED top electrode formed on P layer. Semiconductor laser structure comprises of single crystal silicon bonded quartz substrate, single crystal silicon electrode layer formed on quartz substrate, N layer epitaxial grown on LD of single crystal silicon electrode layer, active layer of LD on N layer, P layer of LD on LD active layer and top electrode of LD on P layer of LD. The present invention can realize bottom luminescence of LED and LD elements, improve luminescence efficiency of LED and LD.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting-diode and semiconductor laser.Particularly relate to a kind of on the monocrystalline silicon thin film quartz substrate light-emitting diode and laser fabrication method and the light-emitting diode and the laser of epitaxial growth semiconductor light-emitting-diode and semiconductor laser.
Background technology
The light-emitting diode (LED) of GaN class prepares usually at sapphire (Al at present
2O
3) (GROUPIII NITRIDE LED WITH SILICON CARBIDE SUBSTRATE, Edmond, John Adam on (S.Nakamura, T.Mukai, and M.Senoh, Appl.Phys.Lett., 64,1687,1994) or carborundum (SiC) substrate; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John; United States Patent (USP), 20050040426) they exist, and the substrate price comparison is expensive, substrate diameter has only the 2-4 inch usually, can not with weak point such as silicon (Si) microelectronic circuit of maturation is integrated.Silicon substrate has preferably thermal conductivity, conductivity, diameter can reach advantages such as 30 centimetres preferably.The research of being GaN LED of the body silicon substrate also is subjected to people's attention (Selective area depositedblue GaN-InGaN multiple-quantum well light emitting diodes over siliconsubstrates recently, J.W.Yang, A.Lunev, G.Simin, A.Chitnis, M.Shatalov, and M.AsifKhan, APPLIED PHYSICS LETTERS VOLUME 76, NUMBER 3,273,2000), its difficulty is: the thermal mismatching of Si and GaN class storeroom and lattice mismatch can cause with the be full of cracks of the thin-film material of GaN class and can't prepare high performance GaN LED at it; In addition, the body silicon substrate is opaque in visible-range, and this just requires LED to adopt emission structure at top, and 50% of the photon of launching from the GaN active layer might be absorbed by the body silicon substrate.
Summary of the invention
Technical problem to be solved by this invention is that a kind of light-emitting diode and laser fabrication method and light-emitting diode and laser are provided.
The technical solution adopted in the present invention is: the manufacture method of a kind of semiconductor light-emitting-diode and laser, be with light-emitting diode and laser be direct epitaxial growth on the monocrystalline silicon thin film quartz substrate or epitaxial growth depositing on the monocrystalline silicon thin film quartz substrate of resilient coating.Comprise the steps:
(1) polishing monocrystalline silicon piece chemical machine is reached set thickness after, in set depth, carry out hydrogen ion and inject, at the thin layer that forms a hydrogen content from the top surface set depth place of monocrystalline substrate;
(2) with the polished surface of monocrystalline silicon and the quartz substrate bonding of polishing, pass through high-temperature annealing process, form Separation at the thin layer place of hydrogen content, make to be injected with hydrionic monocrystalline silicon thin film and substrate separation on the thin layer, form the monocrystalline silicon thin film quartz substrate with the quartz substrate bonding;
(3) the monocrystalline silicon thin film quartz substrate that forms is carried out high annealing,, recover the defective that in monocrystalline silicon thin film, is produced in the hydrogen injection process to add the bonding performance of strong film;
(4) monocrystalline silicon membrane to the monocrystalline silicon thin film quartz carries out attenuate and surface finish, forms the monocrystalline silicon thin film of extension variety classes semiconductor light-emitting-diode and laser desired thickness;
(5) monocrystalline silicon thin film being carried out dosage is 5 * 10
19-5 * 10
21The phosphonium ion of/cubic centimetre injects and mixes, and afterwards at 700 ℃ of-1100 ℃ of high-temperature activations, forms conductive electrode;
(6) with the method for metallo-organic compound chemical vapour deposition (CVD) or grouping beam epitaxy N layer, active illuminating layer and the P layer of epitaxial growth semiconductor light-emitting-diode and laser successively;
(7), form the top electrodes of semiconductor light-emitting-diode and laser with the low-resistance metal level of the high reflection of method deposition of sputter, evaporation or electron beam evaporation.
At described set depth of (1) step is 100nm-300nm.
The hydrogen ion dosage that injects in (1) step is 4-6E16/cm
2
Described high temperature anneal temperature is 100-600 ℃.
Include at described variety classes LED of (4) step and LD: be the blue-ray LED of active layer with the InGaN/GaN Multiple Quantum Well, or be the green light LED of active layer with the InGaN/GaN Multiple Quantum Well, or with InGaN/GaN, InGaAs/GaAs and InGaP/InP Multiple Quantum Well are the red-light LED of active layer, or are infrared, ruddiness, green glow, the blue light LD of active layer with InGaN/GaN, InGaAs/GaAs and InGaP/InP Multiple Quantum Well.
At described variety classes semiconductor light-emitting-diode of (4) step and laser desired thickness be: the thickness of the monocrystalline silicon membrane during when extension blue-light semiconductor light-emitting diode or laser is 30nm; The thickness of the semiconductor light-emitting-diode of, ruddiness green when extension or the monocrystalline silicon membrane of laser is 50nm-100nm.
The crystal orientation of described monocrystalline silicon thin film is＜111 〉,＜100 or＜110〉crystal orientation.
In the (5 step), also can be on monocrystal thin films grown buffer layer, constitute monocrystalline silicon thin film quartz (SOQ) substrate that deposits resilient coating.
Described resilient coating is AlN or ZnO or SiC film, or the mixing of any two or three in these three kinds of films.
Described semiconductor light-emitting-diode that makes and semiconductor laser are in III-V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode and semiconductor laser, II-VI family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode and semiconductor laser, V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode and semiconductor laser, and organic polymer and small molecular semiconductor light-emitting diode and semiconductor laser.
The top electrodes of described semiconductor light-emitting-diode and laser device is the metal electrode of Pb or Au or Ti or Al or Ag or Mg or Ca.
The semiconductor light-emitting-diode that the manufacture method of employing semiconductor light-emitting-diode of the present invention and laser is made includes and quartz substrate bonding monocrystalline silicon thin film; Heat and be formed on monocrystalline silicon electrode layer on the quartz substrate after the activation; The N layer material of the LED of epitaxial growth on the monocrystalline silicon electrode layer; Be positioned at the luminescent layer of the LED on the N layer material of LED; Be positioned at the P layer of the LED on the luminescent layer of LED; Be formed on the top electrodes of the LED on the P layer.
The crystal orientation of described monocrystalline silicon thin film is＜111〉or＜100 or＜110〉crystal orientation.
Described monocrystalline silicon induce and the N layer material of electrode layer and LED between also can be formed with resilient coating, and the N layer material of described LED links to each other with the monocrystalline silicon electrode layer by metal electrode 702.
Described resilient coating 701 is to be made of AlN or ZnO or SiC.
Described semiconductor light-emitting-diode is III-V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or II-VI family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or organic polymer and small molecular semiconductor light-emitting diode.
The semiconductor laser that the manufacture method of employing semiconductor light-emitting-diode of the present invention and laser is made includes and quartz substrate bonding monocrystalline silicon thin film; Heat and be formed on monocrystalline silicon electrode layer on the quartz substrate after the activation; The N layer material of the LD of epitaxial growth on the monocrystalline silicon electrode layer; Be positioned at the active layer of the LD on the N layer material of LD; Be positioned at the P layer of the LD on the active layer of LD; Be formed on the top electrodes of the LD on the P layer of LD.
The crystal orientation of described monocrystalline silicon thin film is＜111〉or＜100 or＜110〉crystal orientation.
Described monocrystalline silicon induce and the N layer material of electrode layer and LD between also can be formed with resilient coating, and the N layer material of described LD links to each other with the monocrystalline silicon electrode layer by metal electrode 702.
Described resilient coating is to be made of AlN or ZnO or SiC.
Described semiconductor laser is III-V family heterojunction, quantum well, quantum wire and quantum spot semiconductor laser, or II-VI family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or organic polymer and small molecular semiconductor laser.
Light-emitting diode of the present invention and laser fabrication method and light-emitting diode and laser, but but quartzy lattice strain that monocrystalline silicon thin film has, lattice order, crystal orientation alternative, the ultra-thin silicon film gone up of utilization is to the conductivity of the low absorbability of visible light, semi-transparent semi-reflecting characteristic, doped silicon film and the multinomial good characteristics such as high temperature process of backing material, with it is substrate, thereon epitaxial growth semiconductor light-emitting-diode and semiconductor laser.Semiconductor light-emitting-diode and semiconductor laser with the present invention's preparation, can go up high-performance monocrystalline silicon thin film transistor microelectronic component and the circuit that forms with SOQ, being integrated in becomes the photoelectron integrated system on the same substrate, it can be as being not limited to the high density information source that Projection Display and nearly eye show.Red, green, blue LED semiconductor light-emitting-diode and semiconductor laser with the present invention's preparation can be prepared into lighting source, the picture element of display light source or display.The Sapphire Substrate LED Buddhist monk that the present invention combines now commercialization is in the advantage of the c-Si substrate LED of conceptual phase.Use this technology to replace conventional sapphire, can reduce the substrate cost of LED and LD significantly, can realize integrated with the Si integrated circuit; Compare with the monocrystalline substrate that now still is in research state, can realize that the end of LED and LD device is luminous, can improve the luminous efficiency of LED and LD.
Description of drawings
Fig. 1 is the schematic diagram that injects hydrogen to the setting thickness of bulk single crystal si sheet;
Fig. 2 is the schematic diagram that bulk single crystal si sheet and quartz substrate bonding and hydrogen are induced the monocrystalline silicon thin film stripping process;
Fig. 3 is the chemico-mechanical polishing schematic diagram of SOQ substrate monocrystal silicon film surface;
Fig. 4 is the absorption spectra of different-thickness monocrystalline silicon thin film;
Fig. 5 is the generalized section that is used for the different substrates of epitaxial growth LED
Wherein: a is the SQ substrate for monocrystalline substrate b for Sapphire Substrate c;
Fig. 6: no resilient coating extension LED device architecture schematic diagram on SOQ;
Fig. 7: resilient coating extension LED device architecture schematic diagram is arranged on SOQ;
Fig. 8: no resilient coating extension LD device architecture schematic diagram on SOQ;
Fig. 9: resilient coating extension LD device architecture schematic diagram is arranged on SOQ;
Wherein:
101: monocrystalline silicon piece 102: the thin layer of high hydrogen content
103: monocrystalline silicon thin film 104: hydrogen ion injects
201: quartz substrate 202: Separation
301: polishing film 302: surface finish
501: monocrystalline substrate 502: sapphire (Al2O3 crystal)
The N layer material of 503:SOQ substrate 601:LED
602: the P layer of luminescent layer 603:LED
604: top electrodes 701: resilient coating
702: the N layer material of metal electrode 801:LD
The P layer of the active layer 803:LD of 802:LD
Embodiment
Below in conjunction with embodiment and accompanying drawing light-emitting diode of the present invention and laser fabrication method and light-emitting diode and laser are made a detailed description.
The manufacture method of semiconductor light-emitting-diode of the present invention (LED) and laser (LD), described light-emitting diode and semiconductor laser be direct epitaxial growth on monocrystalline silicon thin film quartz (SOQ) substrate or epitaxial growth depositing on monocrystalline silicon thin film quartz (SOQ) substrate of resilient coating.
Semiconductor light-emitting-diode of the present invention and laser fabrication method specifically comprise the steps:
(1) polishing monocrystalline silicon piece chemical machine (CMP) is reached setting thickness, described setting thickness is 100nm-300nm, carries out heavy dose of hydrogen ion afterwards and inject in setting thickness, and the hydrogen ion dosage of injection is 4-6E16/cm
2, set the thin layer that the thickness place forms a high hydrogen content at top surface from monocrystalline substrate;
(2) with the polished surface of monocrystalline silicon and the quartz substrate bonding of polishing, pass through high-temperature annealing process, described high temperature anneal temperature is 100-600 ℃, thin layer place at high hydrogen content forms Separation, make to be injected with hydrionic monocrystalline silicon thin film and substrate separation on the thin layer, form the monocrystalline silicon thin film quartz substrate with the quartz substrate bonding;
(3) the monocrystalline silicon thin film quartz substrate that forms is carried out high annealing,, recover the defective that in monocrystalline silicon thin film, is produced in the hydrogen injection process to add the bonding performance of strong film;
(4) monocrystalline silicon membrane to the monocrystalline silicon thin film quartz carries out attenuate and surface finish, forms the monocrystalline silicon thin film of extension variety classes LED and LD desired thickness.The crystal orientation of described monocrystalline silicon thin film is＜111 〉,＜100 or＜110〉crystal orientation.
Described variety classes LED and LD include: be the blue-ray LED of active layer with the InGaN/GaN Multiple Quantum Well, or be the green light LED of active layer with the InGaN/GaN Multiple Quantum Well, or with InGaN/GaN, InGaAs/GaAs and InGaP/InP Multiple Quantum Well are the red-light LED of active layer, or are infrared, ruddiness, green glow, the blue light LD of active layer with InGaN/GaN, InGaAs/GaAs and InGaP/InP Multiple Quantum Well;
Described variety classes LED desired thickness is: when the thickness of the monocrystalline silicon membrane of extension blue-ray LED and LD is 30nm; The thickness of the LED of, ruddiness green when extension and the monocrystalline silicon membrane of LD is 50nm-100nm.
(5) monocrystalline silicon thin film being carried out dosage is 5 * 10
19-5 * 10
21The phosphonium ion of/cubic centimetre injects and mixes, and afterwards at 700 ℃ of-1100 ℃ of high-temperature activations, forms conductive electrode;
When on monocrystalline silicon thin film quartz (SOQ) substrate that light-emitting diode and the direct epitaxial growth of laser need deposited resilient coating, also can be on monocrystal thin films grown buffer layer, constitute monocrystalline silicon thin film quartz (SOQ) substrate that deposits resilient coating.Described resilient coating is AlN or ZnO or SiC film, or the mixing of any two or three in these three kinds of films.
(6) with N layer, active illuminating layer and the P layer of MOCVD (metallo-organic compound chemical gaseous phase depositing process) or MBE (molecular beam epitaxial method) epitaxial growth LED successively or LD;
(7), form the top electrodes of LED or LD with the low-resistance metal level of the high reflection of method deposition of sputter, evaporation or electron beam evaporation.(top electrodes of described LED and LD device is that the high electricity of Pb or Au or Ti or Al or Ag or Mg or Ca is led, the high reflecting metal electrode.
Semiconductor light-emitting-diode that said method makes and semiconductor laser are in III-V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode and semiconductor laser, II-VI family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode and semiconductor laser, V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode and semiconductor laser, and organic polymer and small molecular semiconductor light-emitting diode and semiconductor laser.
As shown in Figure 1, the preparation of the SOQ substrate that extension LED is required, can select the crystal orientation for use is that { monocrystalline silicon piece 101 of 111} after the chemico-mechanical polishing (CMP), carries out heavy dose (4-6E16cm on the degree of depth of selecting (100nm-300nm)
2) hydrogen ion inject 104.Like this, in the bottom of the monocrystalline silicon thin film 103 of the top of monocrystalline substrate 101 100-300nm, form the thin layer 102 of a high hydrogen content.
As shown in Figure 2, the surface of monocrystalline silicon thin film 103 and the quartz substrate of polishing 201 bondings, afterwards, by temperature course (100-600 ℃), thin layer 102 places of high hydrogen content will be because of the swollen sudden and violent formation Separation 202 of hydrogen, monocrystalline silicon thin film 103 is separated with monocrystalline silicon piece 101, and monocrystalline silicon thin film 103 forms the SOQ substrate with quartz substrate 201 bondings.Afterwards, the SOQ substrate that forms is carried out high annealing,, recover the defective that in monocrystalline silicon thin film, is produced in the hydrogen injection process to add the bonding performance of strong film.
As shown in Figure 3, monocrystalline silicon membrane film 103 is carried out attenuate and surface finish 302, form the polishing film 301 of extension variety classes LED desired thickness, the monocrystalline silicon membrane of extension blue-ray LED is about 30nm, and extension is green, the about 50nm-100nm of the monocrystalline silicon membrane of the LED of ruddiness.
As shown in Figure 4, the monocrystalline silicon thin film of different-thickness has different visible absorption spectrums, and monocrystalline silicon thin film has bigger refractive index n, is semi-transparent semi-reflecting characteristic, can form the micro-resonant cavity of LED, increases the luminous efficiency of LED.
As shown in Figure 5, be the different substrates that the LED extension is adopted, the monocrystalline substrate 501 in 111} crystal orientation (among Fig. 5 a), sapphire (Al2O3 crystal) 502 (b among Fig. 5) and SOQ substrate 503 (c among Fig. 5).
Wherein, monocrystalline substrate 501 low prices, it is integrated to carry out photoelectricity with silica-based microelectronics system, one of its shortcoming is that monocrystalline substrate 501 is big with LED (GaN etc) stress of extension, the LED film is chapped easily, and in addition, this stress also can increase the defect state density of LED.Two of shortcoming, monocrystalline substrate 501 (0.55mm) is opaque for visible light, is that the visible light that will enter into monocrystalline silicon all sponges basically.Like this, the loss late of light accounts for 50%, and LED will adopt top lighting structure.
At present, Cheng Shu technology of preparing is to adopt Sapphire Substrate 502 extension LED.But, the size of substrate little (2-4inch), and costing an arm and a leg, it is integrated to carry out photoelectron microelectronics.
The advantage of above-mentioned several substrates and not enough relatively listing in the table 1, therefrom as can be seen, SOQ has remarkable advantages as the epitaxial substrate of LED.
Table 1: the performance of the different substrates of epitaxial growth LED relatively
| Substrate | Crystal structure | The visible light transmissive state | The LED structure | Conductivity | Stress | Light loss |
| C-Si | Monocrystalline { 111} | Absorb | Top light emitting | Conduction | Difference | Greatly |
| Al2O3 | Monocrystalline | Thoroughly | Bottom-face luminous | Non-conductive | Good | Little |
| SOQ | Monocrystalline { 111} | Semi-transparent semi-reflecting | The bottom-face luminous resonant cavity | Conduction | Better | Little |
As shown in Figure 6, the semiconductor light-emitting-diode (LED) that employing semiconductor light-emitting-diode of the present invention and laser fabrication method are made includes and quartz substrate 201 bonding monocrystalline silicon thin films 103; Heat and be formed on monocrystalline silicon electrode layer 301 on the quartz substrate 201 after the activation; The N layer material 601 of the LED of epitaxial growth on monocrystalline silicon electrode layer 301; Be positioned at the luminescent layer 602 of the LED on the N layer material 601 of LED; Be positioned at the P layer 603 of the LED on the luminescent layer 602 of LED; Be formed on the top electrodes 604 of the LED on the P layer 603 of LED.The monocrystalline silicon electrode layer 301 of the bottom of described LED forms the micro-resonant cavity that can improve the LED luminous efficiency with the top electrodes 604 of the height reflection at top.
The crystal orientation of above-mentioned monocrystalline silicon thin film 103 is＜111〉or＜100 or＜110〉crystal orientation.
As shown in Figure 7, described monocrystalline silicon induce and the N layer material 601 of electrode layer 301 and LED between also can be formed with resilient coating 701, and the N layer material 601 of described LED links to each other with monocrystalline silicon electrode layer 301 by metal electrode 702.Described resilient coating 701 is to be made of AlN or ZnO or SiC.
Above-mentioned semiconductor light-emitting-diode is III-V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or II-VI family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or organic polymer and small molecular semiconductor light-emitting diode.
As shown in Figure 8, the semiconductor laser LD that employing semiconductor light-emitting-diode of the present invention and laser fabrication method are made includes and quartz substrate 201 bonding monocrystalline silicon thin films 103; Heat and be formed on monocrystalline silicon electrode layer 301 on the quartz substrate 201 after the activation; The N layer material 801 of the LD of epitaxial growth on monocrystalline silicon electrode layer 301; Be positioned at the active layer 802 of the LD on the N layer material 801 of LD; Be positioned at the P layer 803 of the LD on the active layer 802 of LD; Be formed on the top electrodes 604 of the LD on the P layer 803 of LD.
The crystal orientation of above-mentioned monocrystalline silicon thin film 103 is＜111〉or＜100 or＜110〉crystal orientation.
As shown in Figure 9, described monocrystalline silicon induce and the N layer material 801 of electrode layer 301 and LD between also can be formed with resilient coating 701, and the N layer material 801 of described LD links to each other with monocrystalline silicon electrode layer 301 by metal electrode 702.Described resilient coating 701 is to be made of AlN or ZnO or SiC.
Above-mentioned semiconductor laser is III-V family heterojunction, quantum well, quantum wire and quantum spot semiconductor laser, or II-VI family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or organic polymer and small molecular semiconductor laser.
Above-mentioned detailed description is relevant of the present invention specifying, and does not allly break away from the described equivalence of claim of the present invention and implements or change, all belongs to context of the present invention.
Claims (22)
1. the manufacture method of semiconductor light-emitting-diode and laser is characterized in that, be with light-emitting diode and laser be direct epitaxial growth on the monocrystalline silicon thin film quartz substrate or epitaxial growth depositing on the monocrystalline silicon thin film quartz substrate of resilient coating.
2. semiconductor light-emitting-diode according to claim 1 and laser fabrication method is characterized in that, comprise the steps:
(1) polishing monocrystalline silicon piece chemical machine is reached set thickness after, in set depth, carry out hydrogen ion and inject, at the thin layer that forms a hydrogen content from the top surface set depth place of monocrystalline substrate;
(2) with the polished surface of monocrystalline silicon and the quartz substrate bonding of polishing, pass through high-temperature annealing process, form Separation at the thin layer place of hydrogen content, make to be injected with hydrionic monocrystalline silicon thin film and substrate separation on the thin layer, form the monocrystalline silicon thin film quartz substrate with the quartz substrate bonding;
(3) the monocrystalline silicon thin film quartz substrate that forms is carried out high annealing,, recover the defective that in monocrystalline silicon thin film, is produced in the hydrogen injection process to add the bonding performance of strong film;
(4) monocrystalline silicon membrane to the monocrystalline silicon thin film quartz carries out attenuate and surface finish, forms the monocrystalline silicon thin film of extension variety classes semiconductor light-emitting-diode and laser desired thickness;
(5) monocrystalline silicon thin film being carried out dosage is 5 * 10
19-5 * 10
21The phosphonium ion of/cubic centimetre injects and mixes, and afterwards at 700 ℃ of-1100 ℃ of high-temperature activations, forms conductive electrode;
(6) with the method for metallo-organic compound chemical vapour deposition (CVD) or grouping beam epitaxy N layer, active illuminating layer and the P layer of epitaxial growth semiconductor light-emitting-diode and laser successively;
(7), form the top electrodes of semiconductor light-emitting-diode and laser with the low-resistance metal level of the high reflection of method deposition of sputter, evaporation or electron beam evaporation.
3. semiconductor light-emitting-diode according to claim 2 and laser fabrication method is characterized in that, are 100nm-300nm at described set depth of (1) step.
4. semiconductor light-emitting-diode according to claim 2 and laser fabrication method is characterized in that, the hydrogen ion dosage that injects in (1) step is 4-6E16/cm
2
5. semiconductor light-emitting-diode according to claim 2 and laser fabrication method is characterized in that, described high temperature anneal temperature is 100-600 ℃.
6. semiconductor light-emitting-diode according to claim 2 and laser fabrication method, it is characterized in that, include at described variety classes LED of (4) step and LD: be the blue-ray LED of active layer with the InGaN/GaN Multiple Quantum Well, or be the green light LED of active layer with the InGaN/GaN Multiple Quantum Well, or with InGaN/GaN, InGaAs/GaAs and InGaP/InP Multiple Quantum Well are the red-light LED of active layer, or are infrared, ruddiness, green glow, the blue light LD of active layer with InGaN/GaN, InGaAs/GaAs and InGaP/InP Multiple Quantum Well.
7. according to claim 2 or 6 described semiconductor light-emitting-diodes and laser fabrication method, it is characterized in that at described variety classes semiconductor light-emitting-diode of (4) step and laser desired thickness be: the thickness of the monocrystalline silicon membrane during when extension blue-light semiconductor light-emitting diode or laser is 30nm; The thickness of the semiconductor light-emitting-diode of, ruddiness green when extension or the monocrystalline silicon membrane of laser is 50nm-100nm.
8. semiconductor light-emitting-diode according to claim 1 and 2 and laser fabrication method is characterized in that, the crystal orientation of described monocrystalline silicon thin film is＜111 〉,＜100 or＜110〉crystal orientation.
9. semiconductor light-emitting-diode according to claim 2 and laser fabrication method is characterized in that, in the (5 step), also can be on monocrystal thin films grown buffer layer, constitute monocrystalline silicon thin film quartz (SOQ) substrate that deposits resilient coating.
10. semiconductor light-emitting-diode according to claim 9 and laser fabrication method is characterized in that, described resilient coating is AlN or ZnO or SiC film, or the mixing of any two or three in these three kinds of films.
11. semiconductor light-emitting-diode according to claim 1 and 2 and laser fabrication method, it is characterized in that, described semiconductor light-emitting-diode that makes and semiconductor laser are in III-V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode and semiconductor laser, II-VI family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode and semiconductor laser, V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode and semiconductor laser, and organic polymer and small molecular semiconductor light-emitting diode and semiconductor laser.
12. semiconductor light-emitting-diode according to claim 1 and 2 and laser fabrication method is characterized in that, the top electrodes of described semiconductor light-emitting-diode and laser device is the metal electrode of Pb or Au or Ti or Al or Ag or Mg or Ca.
13. a semiconductor light-emitting-diode that adopts the described method of claim 2 to make is characterized in that, includes and quartz substrate (201) bonding monocrystalline silicon thin film (103); Heat and be formed on monocrystalline silicon electrode layer (301) on the quartz substrate (201) after the activation; The N layer material (601) of the LED of epitaxial growth on monocrystalline silicon electrode layer (301); Be positioned at the luminescent layer (602) of the LED on the N layer material (601) of LED; Be positioned at the P layer (603) of the LED on the luminescent layer (602) of LED; Be formed on the top electrodes (604) of the LED on the P layer (603).
14. the semiconductor light-emitting-diode that the described method of employing claim 2 according to claim 13 is made is characterized in that the crystal orientation of described monocrystalline silicon thin film (103) is＜111〉or＜100 or＜110〉crystal orientation.
15. the semiconductor light-emitting-diode that the described method of employing claim 2 according to claim 13 is made, it is characterized in that, described monocrystalline silicon induce and the N layer material (601) of electrode layer (301) and LED between also can be formed with resilient coating (701), and the N layer material (601) of described LED links to each other with monocrystalline silicon electrode layer (301) by metal electrode (702).
16. the semiconductor light-emitting-diode that the described method of employing claim 2 according to claim 15 is made is characterized in that, described resilient coating (701) is to be made of AlN or ZnO or SiC.
17. the semiconductor light-emitting-diode that the described method of employing claim 2 according to claim 13 is made, it is characterized in that, described semiconductor light-emitting-diode is III-V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or II-VI family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or organic polymer and small molecular semiconductor light-emitting diode.
18. a semiconductor laser that adopts the described method of claim 2 to make is characterized in that, includes and quartz substrate (201) bonding monocrystalline silicon thin film (103); Heat and be formed on monocrystalline silicon electrode layer (301) on the quartz substrate (201) after the activation; The N layer material (801) of the LD of epitaxial growth on monocrystalline silicon electrode layer (301); Be positioned at the active layer (802) of the LD on the N layer material (801) of LD; Be positioned at the P layer (803) of the LD on the active layer (802) of LD; Be formed on the top electrodes (604) of the LD on the P layer (803) of LD.
19. the semiconductor laser that the described method of employing claim 2 according to claim 18 is made is characterized in that the crystal orientation of described monocrystalline silicon thin film (103) is＜111〉or＜100 or＜110〉crystal orientation.
20. the semiconductor laser that the described method of employing claim 2 according to claim 18 is made, it is characterized in that, described monocrystalline silicon induce and the N layer material (801) of electrode layer (301) and LD between also can be formed with resilient coating (701), and the N layer material (801) of described LD links to each other with monocrystalline silicon electrode layer (301) by metal electrode 702.
21. the semiconductor laser that the described method of employing claim 2 according to claim 20 is made is characterized in that, described resilient coating (701) is to be made of AlN or ZnO or SiC.
22. the semiconductor laser that the described method of employing claim 2 according to claim 18 is made, it is characterized in that, described semiconductor laser is III-V family heterojunction, quantum well, quantum wire and quantum spot semiconductor laser, or II-VI family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or V family heterojunction, quantum well, quantum wire and quantum spot semiconductor light-emitting diode, or organic polymer and small molecular semiconductor laser.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022892A (en) * | 2012-12-14 | 2013-04-03 | 武汉电信器件有限公司 | Structure and manufacture method of high power laser chip with wavelength of 808nm |
| CN108604773A (en) * | 2015-11-09 | 2018-09-28 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor laser diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5041714B2 (en) * | 2006-03-13 | 2012-10-03 | 信越化学工業株式会社 | Microchip and SOI substrate for microchip manufacturing |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022892A (en) * | 2012-12-14 | 2013-04-03 | 武汉电信器件有限公司 | Structure and manufacture method of high power laser chip with wavelength of 808nm |
| CN103022892B (en) * | 2012-12-14 | 2015-03-25 | 武汉电信器件有限公司 | Structure and manufacture method of high power laser chip with wavelength of 808nm |
| CN108604773A (en) * | 2015-11-09 | 2018-09-28 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor laser diode |
| CN108604773B (en) * | 2015-11-09 | 2021-12-24 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor laser diode |
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