CN101246192B - Miniature three-dimensional electric field sensor - Google Patents
Miniature three-dimensional electric field sensor Download PDFInfo
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- CN101246192B CN101246192B CN2007100638826A CN200710063882A CN101246192B CN 101246192 B CN101246192 B CN 101246192B CN 2007100638826 A CN2007100638826 A CN 2007100638826A CN 200710063882 A CN200710063882 A CN 200710063882A CN 101246192 B CN101246192 B CN 101246192B
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Abstract
The invention belongs to the field of sensor technology, particularly relating to an electric field sensor. In order to solve the problem that the existing micro type electric field sensor can only measure component in a certain direction of electric field three-dimensional vector, the invention provides a micro type three-dimensional electric field sensor, the sensor is composed of X direction electric field measure unit, Y direction electric field measure unit, Z direction electric field measure unit and substrate, wherein the X direction electric field measure unit, Y direction electric field measure unit, Z direction electric field measure unit are used for measuring X component, Y component and Z component of electric field vector, and the electric field measure unit in every direction includes driving electrode, driving structure, shielding electrode and induction electrode. The sensor is prepared with microfabrication technology, and has merits of small volume, low consumption, easy batch production and so on.
Description
Technical field
The invention belongs to sensor technical field, particularly a kind of electric-field sensor.
Background technology
Existing electric-field sensor mainly is divided into charge inductive type and optical profile type two classes according to principle of work.The manufacturing technology of traditional physical construction charge inductive type electric-field sensor is comparatively ripe, precision is high, range is bigger, but this sensor bulk is big, structure is complicated, price is also relatively more expensive.Optical profile type electric-field sensor response speed is fast, noise is lower, but measurement range is narrow, cost is high and be not suitable for the detection of electrostatic field.Along with developing rapidly of micro-processing technology, electric-field sensor develops to the direction that volume is little, low in energy consumption, cost is low, be easy to mass production day by day.
The inventor had once applied for adopting the three-dimensional electric field sensor patent (application for a patent for invention number 200510012178.9) of physical construction and the one dimension micro field sensor patent (patent No. ZL03106433.7) that adopts the micro-processing technology preparation.
One dimension micro field sensor (patent No. ZL03106433.7) can only be measured electric field vertical with substrate surface or electric field component, energy measurement electric field or the electric field component parallel not with substrate, therefore, in actual measurement, because the direction of electric field to be measured is uncertain usually, measurement data only can reflect the size of the some durection components of electric field trivector, causes measuring error easily.
Summary of the invention
Existing micro field sensor is the size of the some durection components of energy measurement electric field trivector only, when direction of an electric field to be measured and sensor base surface out of plumb, can produce measuring error, the objective of the invention is in order to solve prior art problems, propose a kind of micro field sensor of realizing that three-dimensional electric field detects.
In order to realize purpose of the present invention, the technical scheme that the present invention proposes miniature three-dimensional electric field sensor is as follows: X all is positioned in the substrate to the electric field measurement unit to electric field measurement unit, Z to electric field measurement unit, Y, and X be respectively applied for to the electric field measurement unit to electric field measurement unit, Z to electric field measurement unit, Y the X that measures electric field intensity to, Y to, Z to component.
The sensitive structure of sensor is made of to electric field measurement unit and substrate to electric field measurement unit, Z to electric field measurement unit, a pair of Y a pair of X, and these measuring units all are positioned in the substrate.
According to embodiments of the invention, adopt a pair of X to the electric field measurement unit, form differential configuration, be used for offsetting effectively the coupling of Z, thereby measured X is to electric field component exactly to electric field component.
According to embodiments of the invention, adopt a pair of Y to the electric field measurement unit, form differential configuration, be used for measuring Y exactly to electric field component.
According to embodiments of the invention, adopt a Z to be used to measure the Z of electric field intensity to electric field component to the electric field measurement unit.
According to embodiments of the invention, the electric field measurement unit of described each direction includes drive electrode, drives structure, guarded electrode and induction electrode, wherein:
Drive electrode is fixed in the substrate, and is connected with external drive circuit; Linking to each other with drive electrode of drives structure, drives structure links to each other with guarded electrode; The unsettled placement of guarded electrode, induction electrode is fixed in the substrate; Guarded electrode is under the driving of drives structure, and with induction electrode generation relative motion, thereby the modulation external electric field makes the electric current that produces alternation on the induction electrode, realizes that by the size of measuring electric current external electric field measures.
According to embodiments of the invention, comprise the drives structure that driving force is provided, be used to drive guarded electrode.
Described drives structure adopts hot drives structure, or adopts static driven, or adopts Electromagnetic Drive, or adopts the Piezoelectric Driving mode, or adopts marmem etc. can produce the structure of driving force.
Sensor of the present invention can be prepared by micro-processing technology.Because the electric field detecting direction has covered three-dimensional, therefore no matter how the relative electric-field sensor detection direction of direction of an electric field changes, and the signal of its collection can both reflect the size of three-dimensional electric field.
Compare with existing three-dimensional electric field sensor, sensor proposed by the invention has advantages such as volume is little, low in energy consumption.Compare with the one dimension micro field sensor, sensor measurement accuracy of the present invention is higher.This is because in actual measurement, the direction of electric field to be measured is uncertain usually, the measurement data of one dimension electric-field sensor only can reflect the size of the some durection components of electric field trivector, when the direction of electric field to be measured and sensor base surface out of plumb, can cause measuring error, and sensor of the present invention can be measured the size of three components of electric field intensity simultaneously, thereby makes measurement result more accurate.
Electric-field sensor is widely used in fields such as meteorology, Aero-Space, electric power, earthquake prediction, safety in production.
Description of drawings
Fig. 1 is a three-dimensional micro electric-field sensor structural representation of the present invention.
Fig. 2 is that Z of the present invention is to electric field measurement cellular construction and principle schematic.
Fig. 3 is X of the present invention to, Y to electric field measurement cellular construction and principle schematic.
Fig. 4 is the hot drives structure synoptic diagram of a kind of V-type beam.
Fig. 5 is square wave voltage waveform figure.
Fig. 6 is the electric field cell mesh structural representation that adopts static driven, and wherein (a) is the static driven structural representation; (b) be static driven structure and the situation of Z after the measuring unit guarded electrode is connected; (c) be the static driven structure with X to or the situation of Y after the measuring unit guarded electrode is connected.
Fig. 7 is a static broach drives structure synoptic diagram.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail, be to be noted that described embodiment only is intended to be convenient to the understanding of the present invention, and it is not played any qualification effect.
The embodiment of three-dimensional micro electric-field sensor as shown in Figure 1: comprise X to electric field measurement unit 1, Y to electric field measurement unit 2, Z to electric field measurement unit 3 and substrate 4.X all is seated in the substrate 4 to electric field measurement unit 3 to electric field measurement unit 2, Z to electric field measurement unit 1, Y, and the preferred silicon chip of substrate 4 materials also can adopt other that certain rigidity, on-deformable material are arranged, such as glass sheet and metal etc.Aforesaid X adopts differential configuration to electric field measurement unit 1 and Y respectively to electric field measurement unit 2, wherein:
First differential configuration comprises: adopt a pair of X to electric field measurement unit 1;
Second differential configuration comprises: adopt a pair of Y to electric field measurement unit 2;
And adopt a Z to electric field measurement unit 3.
Embodiment as shown in Figures 2 and 3, aforesaid these measuring units include: drive electrode 5, drives structure 6, guarded electrode 7 and induction electrode 8 etc., they constitute by conductive material, preferred polysilicon, monocrystalline silicon or metal.Wherein, drives structure 6 adopts the hot drives structure of V-type beam, and drive electrode 5 is fixed in the substrate 4, and is connected with external drive circuit.Drives structure 6 is connected between two drive electrodes 5 also unsettled, and its tip links to each other with guarded electrode 7.
X is to electric field measurement unit such as Fig. 2 a and shown in Figure 1.The guarded electrode 7 of pectination is unsettled, and between the broach of guarded electrode 7 staggered placement induction electrode 8.Induction electrode 8 is fixed in the substrate 4.Its principle of work is shown in Fig. 2 b, guarded electrode 7 produces relative motion with induction electrode 8 on the direction that is parallel to external electric field E, make Electric Field Distribution generating period variation around the induction electrode 8, thereby on induction electrode 8, produce periodically variable electric current, detect faradic size by external circuit, just can realize the detection of external electric field.
But for measured X to electric field component, having only an X is inadequate to measuring unit, because when guarded electrode 7 motions, Z also can form induction current to electric field component on induction electrode 8, cause measurement result can not accurately reflect the size of X to electric field.In order to address this problem, we have selected a pair of identical X to the electric field measurement unit, form differential configuration, can eliminate effectively like this Z to electric field to the common mode interference of two X to the electric field measurement unit, thereby extract X to electric field component.The clearer of this differential mode is expressed as follows: Z can induce equal and opposite in direction respectively at a pair of X to electric field component on measuring unit, the induced charge that symbol is identical, and X can induce equal and opposite in direction respectively to X at this to electric field on measuring unit, the induced charge of opposite in sign, utilize differential mode like this, Z just can subtract each other and counteracting fully to the influence of electric field component, and X can strengthen simultaneously to the influence of electric field component, thereby detects X to electric field intensity.
This a pair of X is positioned at two ends on the sensor base to the electric field measurement unit as far as possible, can more effectively respond to X to electric field component like this, reduces substrate or other measuring unit to the distortion effects of X to be measured to electric field component.
Y is identical to the structure and the principle of work of electric field measurement unit to electric field unit and X, has also adopted a pair of measuring unit, forms differential configuration, and just direction of measurement is vertical to maintenance with X, as shown in Figure 1.
In actual applications, also may use many to X to measuring unit or Y to measuring unit, to reach the purpose that strengthens output signal.Simultaneously also can use a plurality of Z, increase output signal to the electric field measurement unit.
Z is to concrete structure such as Fig. 3 a and shown in Figure 1 of electric field detecting unit, and guarded electrode 7 is unsettled and be connected with anchor point 10 by unsettled folding beam 9, and anchor point 10 is fixed in the substrate 4.Induction electrode 8 is divided into two groups: negative induction electrode 81 and positive induction electrode 82, and all be fixed in the substrate 4, and staggered with guarded electrode 7.Identical (the number of patent application: 200510051570.4) of one dimension micro field sensor that its electric field modulation principle and the inventor apply for before this, shown in Fig. 3 b, when guarded electrode 7 during near negative induction electrode 81, induced charge on the negative induction electrode 81 reduces, and the induced charge on the positive induction electrode 82 increases; When guarded electrode 7 during away from negative induction electrode 81, the induced charge on the negative induction electrode 81 increases, and the induced charge on the positive induction electrode 82 reduces.That is to say when guarded electrode 7 with induction electrode 8 relative motions takes place on the vertical direction of external electric field, can produce equal and opposite in direction, the electric current of opposite in sign on the positive and negative induction electrode.Utilize outside differential detection circuit just can detect faradic size, realize the measurement of external electric field.
In three measuring units, guarded electrode 7 drives by the hot drives structure 6 of V-type beam.The principle of work of the hot drives structure 6 of V-type beam as shown in Figure 4, when to drive electrode 5 making alives, the hot drives structure 6 of V-type beam can expanded by heating, its inner thermal stress that produces also drives guarded electrode 7 motions.Work as voltage interruption, the temperature of the hot drives structure 6 of V-type beam reduces and shrinks, and guarded electrode 7 is also got back to initial position thereupon.If to drive electrode 5 two ends add square wave alternating-current voltage U shown in Figure 5 ,-during U, the hot drives structure 6 of V-type beam will drive guarded electrode 7 and do periodic to-and-fro movement, thereby the modulation external electric field.In addition because U and-the U equal and opposite in direction, opposite in sign, in the hot drives structure 6 of V-type beam the V-type beam in the maintenance zero potential of naming a person for a particular job, thereby make guarded electrode also keep zero potential.In addition, the waveform of the making alive U of institute also can be sine wave or triangular wave or the like.
This sensor can also adopt the static driven mode, shown in Fig. 6 (a).As the drive electrode 5 making alive U of drives structure 6 one sides, and during the drive electrode ground connection of opposite side, can produce electrostatic force between the drives structure 6, utilize this electrostatic force just can drive guarded electrode.To measuring unit, drives structure 6 can link to each other with guarded electrode 7 for Z, shown in Fig. 6 (b).For X to or Y to measuring unit, drives structure 6 also can link to each other with guarded electrode 7, shown in Fig. 6 (c).Can learn that by above-mentioned explanation miniature three-dimensional electric field sensor also can adopt the static driven mode.
Except adopting the described static driven mode of Fig. 6 (a), can also adopt static broach type of drive as described in Figure 7, this structure also is that the electrostatic force that utilizes drives structure to produce drives guarded electrode, thus modulated electric fields is realized electric field detecting.
In actual applications, also can adopt electric magnetization, piezoelectric excitation or marmem etc. to produce the type of drive of certain driving force according to actual needs.No matter adopt which kind of drives structure, its common feature is that this drives structure can provide certain driving force, drives guarded electrode 7 motions.
Because edge effect, the electric field component of three directions can intercouple, and Z can produce certain influence to, Y to electric field measurement to X to electric field, and X also can influence the measurement of Z to electric field to, Y to electric field.Measurement result should be chosen rational calibration factor and revise according to calibration result.
The above; only be the embodiment among the present invention; but protection scope of the present invention is not limited thereto; anyly be familiar with the people of this technology in the disclosed technical scope of the present invention; can understand conversion or the replacement expected; all should be encompassed in of the present invention comprising within the scope, therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (5)
1. a miniature three-dimensional electric field sensor is characterized in that, comprising:
At least one pair of X to electric field measurement unit (1), at least one pair of Y to electric field measurement unit (2), at least one pair of Z to electric field measurement unit (3) and substrate (4), wherein,
X all is positioned in the substrate (4) to electric field measurement unit (3) to electric field measurement unit (2), Z to electric field measurement unit (1), Y, and X be respectively applied for to electric field measurement unit (3) to electric field measurement unit (2), Z to electric field measurement unit (1), Y the X that measures electric field intensity to, Y to, Z to component;
The electric field measurement unit of described each direction includes: drive electrode (5), drives structure (6), guarded electrode (7) and induction electrode (8), wherein,
Drive electrode (5) is fixed in the substrate (4), and is connected with external drive circuit; Drive electrode (5) links to each other with drives structure (6), and drives structure (6) links to each other with guarded electrode (7); The unsettled placement of guarded electrode (7), induction electrode (8) are fixed in the substrate (4); Relative motion takes place with induction electrode (8) in guarded electrode (7) under the driving of drives structure (6), thereby the modulation external electric field makes the electric current that produces alternation on the induction electrode, realizes that by the size of measuring electric current external electric field measures.
2. sensor according to claim 1, it is characterized in that, at least comprise a pair of X and form differential configuration to electric field measurement unit (1), this lays respectively at the two ends of substrate (4) to the electric field measurement unit, this to induction electrode (8) to X to electric field component induce the size identical, the induced charge of opposite in sign, and induce big or small identical to electric field component for Z, the induced charge that symbol is identical, when this to X after the induction electrode (8) of electric field measurement unit adopts difference output, Z will offset to the coupling of electric field component, and X will strengthen to the influence of electric field component, thereby measured X is to electric field component exactly.
3. sensor according to claim 1, it is characterized in that, at least comprise a pair of Y and form differential configuration to electric field measurement unit (2), Y is vertical to maintenance with X to the direction of measurement of electric field measurement unit (2), this to induction electrode (8) to Y to electric field component induce the size identical, the induced charge of opposite in sign, and induce big or small identical to electric field component for Z, the induced charge that symbol is identical, when this to Y after the induction electrode (8) of electric field measurement unit adopts difference output, Z will offset to the coupling of electric field component, and X will strengthen to the influence of electric field component, is used for measuring Y exactly to electric field component.
4. sensor according to claim 1 is characterized in that, comprises a Z at least to electric field measurement unit (3), and this Z is positioned at the center section of substrate (4) to electric field measurement unit (3).
5. sensor according to claim 1 is characterized in that, comprises the drives structure (6) that driving force is provided, and is used to drive guarded electrode (7).
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| CN113109636B (en) * | 2021-03-29 | 2022-06-17 | 中国科学院空天信息创新研究院 | Single-chip three-dimensional electric field sensor |
| CN115586380B (en) * | 2022-11-03 | 2024-01-23 | 南方电网数字电网研究院有限公司 | Miniature electric field sensor |
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