CN100430742C - Array-type micro field sensor - Google Patents
Array-type micro field sensor Download PDFInfo
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- CN100430742C CN100430742C CNB2005100933705A CN200510093370A CN100430742C CN 100430742 C CN100430742 C CN 100430742C CN B2005100933705 A CNB2005100933705 A CN B2005100933705A CN 200510093370 A CN200510093370 A CN 200510093370A CN 100430742 C CN100430742 C CN 100430742C
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Abstract
The invention relates to an array micro electric field sensor, which is formed by dual micro electric field sensors, wherein each micro electric field sensor comprises shield electrode, positive induction electrode, passive induction electrode, and driver; and the invention is characterized in that it also comprises I-V converter and sum amplify unit; dual micro electric field sensors all connected to own I-V converter at their outputs, to be parallel connected; the output of each I-V converter is connected to the input of sum amplify unit; the output of sum amplify unit is connected to following processing circuit; the sensor activating signal is connected to the driver of each micro electric field sensor. Compared with single micro electric field sensor, the invention has high output signal, high detecting sensitivity, high reliability and high yield.
Description
Technical field
The present invention relates to sensor technical field, particularly micro field sensor.
Background technology
Electric field intensity is a crucial interdisciplinary characteristic parameter.The measurement of electric field intensity Aero-Space, learn with fields such as environment measuring and commercial production and all have crucial application, for example at aerospace field, the intensity level of atmospheric electric field is listed in one of essential condition that can spacecraft launch, for ensureing the safety lift-off of aircraft, space flight department attaches great importance to the real-time detection and the monitoring of the preceding thunder and lightning of aircraft emission; Learn and the environment measuring field on ground, electric field detects aspects such as the forecast, oil and the ore prospecting that are widely used in general circulation research, geological disaster forecasting, meteorology and sand and dust, atmospheric pollution detection; In the commercial production field, cross strong electric field and can make accurate electronic equipment malfunctioning, even damage these accurate electronic equipments, thereby in the production and use of some sophisticated electronicses, need know the electric field intensity in its production environment or the working environment, in order to avoid equipment malfunction or damage.
At present existing some kinds of electric-field sensors, according to different application backgrounds, applied environment and sensing range, electric-field sensor can be divided into the electric field detection on every side of atmospheric electric field detection, seabed electric field detection, electric system or electric equipment, sophisticated electronics production and the detection of environment for use electric field etc.; According to its principle of work, can be divided into charge inductive type and optical profile type two classes.Charge inductive type electric-field sensor manufacturing technology comparative maturity, range is big, and precision is higher, but because its volume is big, complex structure involves great expense, and has been subjected to certain restriction in application.Optical profile type electric-field sensor response speed is fast, and noise is lower, but the general measure scope is narrower, and cost is higher, and is not suitable for the measurement of electrostatic field.
We have successively applied for a plurality of micro field sensors " vertical vibration decline type electric-field sensor (application for a patent for invention number 02147377.3) and parallel oscillatory type micro field sensor (application for a patent for invention number 03106433.7) ", " heat driven minisize electric field sensor (application for a patent for invention number 200510051260.2) ", " magnetic drives or pyromagnetic combination drive micro field sensor (application for a patent for invention number 200510051261.7) ", " static broach exciting difference detection type miniature electric field sensor (application for a patent for invention number 200510051570.4) ".Because the micro field sensor size is little, its vibrational structure and the gap between them are very little, and running into possibility such as dust will be destroyed.
Summary of the invention
The objective of the invention is on the basis of invention in early stage, for reliability and the yield rate that improves micro field sensor, increase output signal, improve the sensitivity of sensor, and new departure of proposition array-type micro field sensor, this scheme can significantly improve the combination property of micro field sensor.
For achieving the above object, technical solution of the present invention provides a kind of array-type micro field sensor, form by a plurality of micro field sensors, each micro field sensor, comprise guarded electrode, positive induction electrode, negative induction electrode and exciting unit, it also comprises I-V converting unit and summation amplifying unit, wherein, a plurality of micro field sensors, after each comfortable output terminal connects an I-V converting unit, parallel with one another, the output terminal of each I-V converting unit all is electrically connected with the input end of summation amplifying unit, the output termination subsequent process circuit of summation amplifying unit; The sensor excitation signal is electrically connected with the driver element of each micro field sensor.
Described array-type micro field sensor, its described a plurality of micro field sensors are at least two.
Described array-type micro field sensor, its described sensor excitation signal, by one independently the exciting unit send.
Described array-type micro field sensor, its described exciting unit is that static exciting, heat shock are shaken, one of magnetic exciting, piezoelectric exciting or other exciting modes.
The principle of work of array-type micro field sensor of the present invention belongs to charge inductive type, adopts the processing of MEMS process technology, have volume little, in light weight, be easy to integrated, can produce in batches, low cost and other advantages.
Array-type micro field sensor array of the present invention had both had the advantage of micro field sensor, can reduce the damage that causes transducer sensitive structure because of the local pollution of environment again simultaneously, thereby cause the malfunctioning phenomenon of the whole detection system of sensor.The present invention is on the basis of single micro field sensor, in order to ensure the unfailing performance of sensor testing system, array-type micro field sensor is connected in parallel on the test macro; When one of them or two sensors are destroyed, other sensor can also continue startup work to be tested, and can guarantee the normal operation of sensor like this, improves the reliability and the yield rate of micro field sensor system; The output signal of micro field sensor is fainter in addition, and the output of array-type micro field sensor be a plurality of micro field sensor output signals and, thereby can significantly improve the output signal of micro field sensor, thereby improve the sensitivity of micro field sensor.
Description of drawings
Fig. 1. single micro field sensor;
Fig. 2. micro field sensor array and testing circuit thereof.
Embodiment
As shown in Figure 1, single micro field sensor is by grounded shield electrode 1, and positive induction electrode 2 is born induction electrode 3 and driver element 4 and formed.Under the driving of driver element 4, the guarded electrode 1 of ground connection can planar be done periodic motion back and forth with respect to the positive and negative induction electrode of its below, when guarded electrode 1 is positioned at initial position shown in Fig. 1 (a), positive induction electrode 2 conductively-closeds, under the effect of external electric field E, can only induce very a spot of induced charge above it, and the negative induction electrode 3 of this moment exposes fully, goes out the induced charge that is directly proportional with external electric field E at its surface induction; On the contrary, when guarded electrode 1 was positioned at final position shown in Fig. 1 (b), positive induction electrode 2 was exposed, and goes out the electric charge that is directly proportional with external electric field at its surface induction, negative induction electrode 3 conductively-closeds this moment, and its surface can only induce very a spot of electric charge.When guarded electrode 1 is planar done periodic motion back and forth under the driving of driver element 4, the induced charge on the positive and negative induction electrode will be done the cycle variation, form the exchange current that is directly proportional with external electric field E.
Array-type micro field sensor is to invent on the basis of single micro field sensor, as shown in Figure 2, a plurality of micro field sensors, after each comfortable output terminal connects an I-V converting unit 6, parallel with one another, the output terminal of each I-V converting unit 6 all is electrically connected with the input end of summation amplifying unit 7, the output termination subsequent process circuit of summation amplifying unit 7.Sensor excitation signal 5 is electrically connected with the driver element 4 of micro field sensor, power up for the driver element 4 of each micro field sensor, thereby the guarded electrode 1 that orders about each micro field sensor is planar done periodic motion back and forth, to form the exchange current that is directly proportional with external electrical field intensity on positive induction electrode 2 and the negative induction electrode 3, this exchange current converts the voltage signal of an alternation under the effect of I-V converting unit 6, this alternating voltage signal under the effect of summation amplifying unit 7, convert to one bigger, the voltage signal of being convenient to measure that is directly proportional with external electrical field intensity, this voltage signal is transfused to subsequent process circuit, uses for subsequent process circuit.
Sensor excitation signal 5, by one independently the exciting unit send (not drawing among Fig. 2), it is that static exciting, heat shock are shaken, one of magnetic exciting, piezoelectric exciting or other exciting modes.
Claims (4)
1. array-type micro field sensor, form by a plurality of micro field sensors, each micro field sensor, comprise guarded electrode, positive induction electrode, negative induction electrode and driver element, it is characterized in that, also comprise I-V converting unit and summation amplifying unit, wherein, a plurality of micro field sensors, after each comfortable output terminal connects an I-V converting unit, parallel with one another, the output terminal of each I-V converting unit all is electrically connected with the input end of summation amplifying unit, the output termination subsequent process circuit of summation amplifying unit; The sensor excitation signal is electrically connected with the driver element of each micro field sensor.
2. by the described array-type micro field sensor of claim 1, it is characterized in that described a plurality of micro field sensors are at least two.
3. by the described array-type micro field sensor of claim 1, it is characterized in that, described sensor excitation signal, by one independently the exciting unit send.
4. by the described array-type micro field sensor of claim 3, it is characterized in that described exciting unit is that static exciting, heat shock are shaken, in the exciting mode of magnetic exciting, piezoelectric exciting any.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100933705A CN100430742C (en) | 2005-08-26 | 2005-08-26 | Array-type micro field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100933705A CN100430742C (en) | 2005-08-26 | 2005-08-26 | Array-type micro field sensor |
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| CN1920584A CN1920584A (en) | 2007-02-28 |
| CN100430742C true CN100430742C (en) | 2008-11-05 |
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| CNB2005100933705A Expired - Fee Related CN100430742C (en) | 2005-08-26 | 2005-08-26 | Array-type micro field sensor |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI601962B (en) * | 2016-12-21 | 2017-10-11 | 財團法人工業技術研究院 | Static electricity detecting system and method |
| CN112684262B (en) * | 2020-11-19 | 2022-08-09 | 西安交通大学 | Silicon micron column array three-electrode ionization type MEMS electric field sensor and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5828157A (en) * | 1994-11-07 | 1998-10-27 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric actuator and pyroelectric type infrared ray sensor using the same |
| US6107791A (en) * | 1997-07-25 | 2000-08-22 | Korea Advanced Institute Of Science And Technology | Non-disturbing electric field sensor using piezoelectric and converse piezoelectric resonances |
| CN1492235A (en) * | 2002-10-23 | 2004-04-28 | 中国科学院电子学研究所 | Vibrative micro electric field sensor |
| CN1525181A (en) * | 2003-02-25 | 2004-09-01 | 中国科学院电子学研究所 | Parallel vibration pattern minitype electric field sensor |
-
2005
- 2005-08-26 CN CNB2005100933705A patent/CN100430742C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5828157A (en) * | 1994-11-07 | 1998-10-27 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric actuator and pyroelectric type infrared ray sensor using the same |
| US6107791A (en) * | 1997-07-25 | 2000-08-22 | Korea Advanced Institute Of Science And Technology | Non-disturbing electric field sensor using piezoelectric and converse piezoelectric resonances |
| CN1492235A (en) * | 2002-10-23 | 2004-04-28 | 中国科学院电子学研究所 | Vibrative micro electric field sensor |
| CN1525181A (en) * | 2003-02-25 | 2004-09-01 | 中国科学院电子学研究所 | Parallel vibration pattern minitype electric field sensor |
Non-Patent Citations (6)
| Title |
|---|
| Electrostatic Charge and Field SensorsBased onMicromechanical Resonators. Patrick S.Riehl,Karen L.Scott,Richard S.Muller.Journal of microelectromechanical systems,Vol.12 No.5. 2003 |
| Electrostatic Charge and Field SensorsBased onMicromechanical Resonators. Patrick S.Riehl,Karen L.Scott,Richard S.Muller.Journal of microelectromechanical systems,Vol.12 No.5. 2003 * |
| 多驱动电极垂直限幅振动式微型电场传感器. 龚超，邓凯，陶虎，白强，陈绍凤，夏善红.电子器件，第28卷第1期. 2005 |
| 多驱动电极垂直限幅振动式微型电场传感器. 龚超，邓凯，陶虎，白强，陈绍凤，夏善红.电子器件，第28卷第1期. 2005 * |
| 聚酰亚胺振动膜微型电场传感器. 龚超、夏善红、邓凯、白强、陈绍凤.MEMS器件与技术,Vol.12 . 2004 |
| 聚酰亚胺振动膜微型电场传感器. 龚超、夏善红、邓凯、白强、陈绍凤.MEMS器件与技术,Vol.12 . 2004 * |
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