CN101242079A - Semiconductor laser thermal sediment - Google Patents
Semiconductor laser thermal sediment Download PDFInfo
- Publication number
- CN101242079A CN101242079A CNA2007100637109A CN200710063710A CN101242079A CN 101242079 A CN101242079 A CN 101242079A CN A2007100637109 A CNA2007100637109 A CN A2007100637109A CN 200710063710 A CN200710063710 A CN 200710063710A CN 101242079 A CN101242079 A CN 101242079A
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- semiconductor laser
- base
- laser thermal
- main body
- thermal sediment
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- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A semiconductor laser heat sink is characterized in that the heat sink comprises the following components: a base which is rectangular and is provided with a groove at the lower part of the base; a body which is provided with a dent respectively at two side of the body longitudinally; the two sides of the body are respectively provided with a dent transversely; the upper part of the body is provided with a semi-circular gap which is used for arranging the bar strip of the semiconductor laser; the two sides of the dents at the two sides of the body are provided with two symmetric gaps which are for the running-through of water; the joint between the body and the base is provided with two gaps which are symmetric centrally, and the two symmetric gaps are used for fixing with other components in order to lead out the electrode.
Description
Technical field
The present invention relates to the semiconductor laser encapsulation technology, be meant a kind of semiconductor laser thermal sediment especially.
Background technology
Semiconductor laser has small-sized light weight, high efficiency, long-life, be fit to the characteristics produced in batches, is widely used as the light source of applications such as optical communication, optical information processing.But along with the power of semiconductor laser improves constantly, power density constantly increases, and heat dissipation problem has become a key factor of the direct semiconductor laser that influences, particularly high power semiconductor lasers.In recent years, huge fund development semiconductor laser Refrigeration Technique is all dropped in countries in the world, and the design of semiconductor laser thermal sediment begins extensively to be paid attention to by the insider.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor laser thermal sediment, have simple in structure and convenient durable, and the advantage of good refrigeration effect.
For achieving the above object, a kind of semiconductor laser thermal sediment of the present invention is characterized in that, comprising:
One base, this base are rectangle, a groove are arranged below this base;
One main body, the both sides of this main body vertically have a notch respectively; The both sides of this main body laterally have a recess respectively; Semicircle breach is arranged at this main body top, and this semicircle breach is used to arrange the bar bar of semiconductor laser; There is the circular hole of two symmetries at the place, two ends of the recess of these main body both sides, and this symmetrical circular hole is used for water flowing; There are two breach of center procreation symmetry the junction of this main body and base, and two breach of this symmetry are used for fixing with miscellaneous part, so that extraction electrode.
Si Jiaochu on the wherein said base has four circular holes, is used for fixing with miscellaneous part.
Wherein this semiconductor laser thermal sediment is that red copper is a material.
The surface gold-plating film of this semiconductor laser thermal sediment semiconductor laser thermal sediment wherein.
Wherein this base and main body are for dividing body structure or being structure as a whole.
The invention has the beneficial effects as follows:
Purpose semiconductor laser thermal sediment of the present invention, have simple in structure and convenient durable, and the advantage of good refrigeration effect.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing the present invention is made a detailed description, wherein:
The three-dimensional structure diagram of Fig. 1 semiconductor laser thermal sediment of the present invention.
Embodiment
Owing to produce high temperature in the high power semiconductor lasers bar bar course of work, if these heats can not be pulled away the life-span that will influence laser in time, so need heat sinkly carry out the boiler water circulation refrigeration with the water cooling equipment noise spectra of semiconductor lasers.Semiconductor laser array is placed in the semicircle breach 27, closely pile up along circular arc is parallel, and on first and last laser bar bar extraction electrode, cause two breach, 25,26 places of center procreation symmetry with contact conductor, and link to each other with the power line at 25,25 places, constitute current circuit.The pipeline that links to each other with circular hole 23,24 is arranged in heat sink, and the delivery port of water cooling unit links to each other with circular hole 23,24 respectively with water inlet, constitutes the current loop, can water flowing be the semiconductor laser refrigeration.Four circular holes 12 of base can be fixed by screw and miscellaneous part.
See also shown in Figure 1ly, a kind of semiconductor laser thermal sediment of the present invention comprises:
One base 10, this base 10 is a rectangle, a groove 11 is arranged below this base 10; Si Jiaochu on this base 10 has four circular holes 12, is used for fixing with miscellaneous part;
One main body 20, the both sides of this main body 20 vertically have a notch 28,29 respectively; The both sides of this main body 20 laterally have a recess 21,22 respectively; Semicircle breach 27 is arranged at these main body 20 tops, and this semicircle breach 27 is used to arrange the bar bar (figure does not show) of semiconductor laser; There is the circular hole 23,24 of two symmetries at the place, two ends of the recess 21,22 of these main body 20 both sides, and this symmetrical circular hole 23,24 is used for water flowing; There are two breach 25,26 of center procreation symmetry the junction of this main body 20 and base 10, and two breach 25,26 of this symmetry are used for fixing with miscellaneous part, so that extraction electrode.
Wherein this base 10 is the branch body structure with main body 20 or is structure as a whole.
This semiconductor laser thermal sediment is that red copper is a material.
The surface gold-plating film of this semiconductor laser thermal sediment semiconductor laser thermal sediment.
The course of work of the present invention is:
Shown in Figure 1 in conjunction with consulting, a kind of semiconductor laser thermal sediment of the present invention, it is semiconductor laser bar bar (not shown) to be piled up along semicircle breach 27 abreast line up, form semiconductor laser array, from first bar bar and last bar bar difference extraction electrode, allow contact conductor arrive the breach 25,26 of two center procreation symmetries respectively along main body 20 sides, having power line at breach 25,26 places can link to each other with the electrode wires of being drawn by 27 bar bar, to form current circuit.
The delivery port of water cooling unit and water inlet are docked with circular hole 23 and 24 respectively, under the situation of guaranteeing the water route sealing, open the water cooling unit flowing water Valve, current can through circular hole 23 enter semiconductor heat sink in, by the pipeline in heat sink, flow out from circular hole 24, return water cooling unit, cool off, and then the beginning boiler water circulation.
Four circular holes 12 of base position can pass the screw of M4, so that fix with the device of outside.
Claims (5)
1. a semiconductor laser thermal sediment is characterized in that, comprising:
One base, this base are rectangle, a groove are arranged below this base;
One main body, the both sides of this main body vertically have a notch respectively; The both sides of this main body laterally have a recess respectively; Semicircle breach is arranged at this main body top, and this semicircle breach is used to arrange the bar bar of semiconductor laser; There is the circular hole of two symmetries at the place, two ends of the recess of these main body both sides, and this symmetrical circular hole is used for water flowing; There are two breach of center procreation symmetry the junction of this main body and base, and two breach of this symmetry are used for fixing with miscellaneous part, so that extraction electrode.
2. semiconductor laser thermal sediment according to claim 1 is characterized in that, the Si Jiaochu on the wherein said base has four circular holes, is used for fixing with miscellaneous part.
3. semiconductor laser thermal sediment according to claim 1 is characterized in that, wherein this semiconductor laser thermal sediment is that red copper is a material.
4. semiconductor laser thermal sediment according to claim 1 is characterized in that, wherein the surface gold-plating film of this semiconductor laser thermal sediment semiconductor laser thermal sediment.
5. semiconductor laser thermal sediment according to claim 1 is characterized in that, wherein this base and main body are for dividing body structure or being structure as a whole.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2007100637109A CN101242079A (en) | 2007-02-07 | 2007-02-07 | Semiconductor laser thermal sediment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2007100637109A CN101242079A (en) | 2007-02-07 | 2007-02-07 | Semiconductor laser thermal sediment |
Publications (1)
Publication Number | Publication Date |
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CN101242079A true CN101242079A (en) | 2008-08-13 |
Family
ID=39933370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNA2007100637109A Pending CN101242079A (en) | 2007-02-07 | 2007-02-07 | Semiconductor laser thermal sediment |
Country Status (1)
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CN (1) | CN101242079A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109449749A (en) * | 2018-12-26 | 2019-03-08 | 苏州长光华芯半导体激光创新研究院有限公司 | TO packaging fixture and packaging technology |
CN114204405A (en) * | 2015-04-24 | 2022-03-18 | 京瓷株式会社 | Package for mounting optical element, electronic device, and electronic module |
-
2007
- 2007-02-07 CN CNA2007100637109A patent/CN101242079A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114204405A (en) * | 2015-04-24 | 2022-03-18 | 京瓷株式会社 | Package for mounting optical element, electronic device, and electronic module |
CN109449749A (en) * | 2018-12-26 | 2019-03-08 | 苏州长光华芯半导体激光创新研究院有限公司 | TO packaging fixture and packaging technology |
CN109449749B (en) * | 2018-12-26 | 2024-04-26 | 苏州长光华芯半导体激光创新研究院有限公司 | TO packaging clamp and packaging process |
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Open date: 20080813 |