CN101241944A - 太阳能电池芯片保护结构 - Google Patents

太阳能电池芯片保护结构 Download PDF

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CN101241944A
CN101241944A CNA200810070720XA CN200810070720A CN101241944A CN 101241944 A CN101241944 A CN 101241944A CN A200810070720X A CNA200810070720X A CN A200810070720XA CN 200810070720 A CN200810070720 A CN 200810070720A CN 101241944 A CN101241944 A CN 101241944A
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light
chip
solar
solar battery
battery chip
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CN100541826C (zh
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王水菊
万学超
陈天庆
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Genius Electronic Optical Xiamen Co Ltd
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Genius Electronic Optical Xiamen Co Ltd
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Priority to PCT/CN2008/070513 priority patent/WO2009109084A1/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

一种太阳能电池芯片保护结构,在电池芯片上部设有一块聚光镜,其中该聚光镜对应电池芯片大小的位置设有透光区,而在聚光镜的透光区外缘为反光区;透光区为毛面玻璃或曲面透镜。透光区的大小正好对应芯片的大小,则芯片可以有效收集太阳光;另太阳能芯片之外的不需要利用的聚光被反光区反射或吸收掉以免照射至PCB板,造成温升使PCB板融化或破裂,以此有效延长太阳能电池的使用寿命;而对透光区进行毛面处理或设为光学曲面透镜,可使射入芯片的光线通过毛面的漫反射或曲面透镜的折反射从新分布,使之入射至芯片的光线均匀化分布,提高太阳电池芯片的填充因数,克服聚光型太阳能电池的缺失点,充分发挥其优势,大大提高太阳能电池的有效利用率。

Description

太阳能电池芯片保护结构
技术领域
本发明是属于太阳能领域,特别是指一种太阳能电池芯片保护结构。
背景技术
太阳能电池是一种由于光伏特效应而将太阳能直接转化为电能器件。当太阳光照到太阳能电池上时,就会把太阳的光能变成电能,产生电流。当多个太阳能电池串联或并联起来就可以成为有较大输出功率的太阳能电池矩阵了。太阳能电池是一种大有前途的新型能源,具有持久性、清洁性和灵活性三大优点。太阳能电池寿命长,只要太阳光存在,太阳能电池就可以一次投资而较长期使用;与火力发电、核能发电相比,太阳能本身是一种环保绿色能源不会引起环境污染;太阳能电池可以大中小并举,大到百万千瓦的中型电站,小到只供一户用的太阳能电池组,这是其它电源无法比拟的。
随着太阳能的进一步广泛应用,在太阳能领域中高的光强可以提高太阳电池的填充因数和有效降低成本,但光线太强温升会使芯片之外的PCB板熔化或断裂,所以科学合理地处理“芯片之外剩余的聚光”至关重要,此点是整个电池应用的关键问题之一,直接决定了太阳能聚光系统的寿命;另一个关键问题是同一太阳电池芯片上接收的光强不均匀会降低其填充因数,从而影响电池效率和寿命,最终也导致成本的提高。因此聚集光系统中处理“太阳能芯片之外剩余的聚光”和“均匀度”在整个太阳能聚光电池的应用中是十分重要的,目前在市场上还没有提出能够解决上述问题的方案。
发明内容
本发明的主要目的是提供一种太阳能电池芯片保护结构,其可以防止芯片之外的PCB板因温升过高而熔化或断裂,有效延长太阳能电池的寿命。
本发明的次要目的是提供一种太阳能电池芯片保护结构,其可有效提高太阳能电池上光线“均匀度”,克服聚光型太阳能电池的缺失点,充分发挥其优势,大大提高太阳能电池的有效利用率。
为实现上述目的,本发明的解决方案是:一种太阳能电池芯片保护结构,在电池芯片上部设有一块聚光镜,其中:该聚光镜对应电池芯片大小的位置设有透光区,而在聚光镜的透光区外缘为反光区。
所述的聚光镜为平板玻璃。
所述反光区上镀有反射膜。
所述反光区为反光透镜。
所述的反光透镜上镀有反射膜。
所述反光区上设有反光器件。
所述透光区为毛面玻璃。
所述透光区为曲面透镜。
采用上述方案后,本发明将电池芯片上的聚光镜划分为透光区与反光区,而透光区的大小正好对应芯片的大小,则芯片可以有效收集太阳光;另太阳能芯片之外的不需要利用的聚光被反光区反射或吸收掉以免照射至PCB板,造成温升使PCB板融化或破裂,以此有效延长太阳能电池的使用寿命。
而对透光区进行毛面处理或设为光学曲面透镜,可使射入芯片的光线通过毛面的漫反射或曲面透镜的折反射从新分布,使之入射至芯片的光线均匀化分布,提高太阳电池芯片的填充因数,克服聚光型太阳能电池的缺失点,充分发挥其优势,大大提高太阳能电池的有效利用率。
附图说明
图1为本发明实施例1的俯视图;
图2为本发明实施例1的剖视图;
图3为本发明实施例2的俯视图;
图4为本发明实施例2的剖视图;
图5为图4的局部放大图;
图6为本发明实施例3的俯视图;
图7为本发明实施例3的剖视图。
具体实施方式
配合图1至图7所示,本发明的太阳能电池芯片保护结构,是在太阳能电池芯片2上部设有一块聚光镜1,其中:该聚光镜1对应电池芯片2大小的位置设有透光区11,而在聚光镜1的透光区11外缘为反光区12。
透光区11的大小正好对应电池芯片2的大小,则电池芯片2可以有效收集太阳光;另太阳能芯片2之外的不需要利用的聚光被反光区12反射或吸收掉以免照射至PCB板,造成温升使PCB板融化或破裂,以此有效延长太阳能电池的使用寿命。
如图1、2所示为本发明的实施例1,该聚光镜1为平板玻璃,中部对应电池芯片2大小的区域为透光区11,而在透光区11周缘的反光区12采用表面镀有反光膜形成或是在反光区12上设置反光器件实现。
如图3、4所示为本发明的实施例2,其中透光区11是采进行毛面处理的毛玻璃,透光区11的设置同上述实施例1,在此不赘述。此处透光区11采毛面可使入射至电池芯片1的光线均匀分布,配合图5所示,毛面均匀化光线原理说明:常规的聚集光线因在光学透镜折反射的作用下(即曲面法线有特定的分布和朝向),光线的传播方向也趋于一个特定的小区域和方向,这样就造成特定方向上的区域的光线强度比较高,其它的就比较低,形成很明显的强度梯度,即我们通常说的不均匀;在这种情况,我们引入毛面,因毛面的表面有凸凹不平的近似“R“面(常规20#号粒度就可以实现,不同粒度对应的效率也不一样,在此不详述),即有不同趋向的曲面法线,这样若有特定分布和朝向的光线打到此面上,就会发生一系列的折反射,形成我们所谓漫反射即原来有特定分布和朝向的光线在毛玻璃的作用下重新分布,使出射的光线在各个方向的分布就比较均匀,(概率机会相等),提高太阳电池芯片2的填充因数,克服聚光型太阳能电池的缺失点,充分发挥其优势,大大提高太阳能电池的有效利用率。
如图6、7所示为本发明的实施例3,其反光区12的设置同实施例1,不再详述;而透光区11可采用曲面透镜,其原理同上述实施例2,同样可达到太阳能电池上光线的“均匀度”,提高太阳能电池有效利用率的功效。

Claims (8)

1、一种太阳能电池芯片保护结构,在电池芯片上部设有一块聚光镜,其特征在于:该聚光镜对应电池芯片大小的位置设有透光区,而在聚光镜的透光区外缘为反光区。
2、如权利要求1所述的太阳能电池芯片保护结构,其特征在于:聚光镜为平板玻璃。
3、如权利要求1或2所述的太阳能电池芯片保护结构,其特征在于:反光区上镀有反射膜。
4、如权利要求1所述的太阳能电池芯片保护结构,其特征在于:所述反光区为反光透镜。
5、如权利要求4所述的太阳能电池芯片保护结构,其特征在于:所述的反光透镜上镀有反射膜。
6、如权利要求1所述的太阳能电池芯片保护结构,其特征在于:所述反光区上设有反光器件。
7、如权利要求1或2所述的太阳能电池芯片保护结构,其特征在于:透光区为毛面玻璃。
8、如权利要求1所述的太阳能电池芯片保护结构,其特征在于:透光区为曲面透镜。
CNB200810070720XA 2008-03-05 2008-03-05 太阳能电池芯片保护结构 Expired - Fee Related CN100541826C (zh)

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CNB200810070720XA CN100541826C (zh) 2008-03-05 2008-03-05 太阳能电池芯片保护结构
PCT/CN2008/070513 WO2009109084A1 (zh) 2008-03-05 2008-03-17 太阳能电池芯片保护结构

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009109084A1 (zh) * 2008-03-05 2009-09-11 玉晶光电(厦门)有限公司 太阳能电池芯片保护结构
CN102487092A (zh) * 2010-12-03 2012-06-06 西安中科麦特电子技术设备有限公司 高倍聚光太阳能光伏模组
US8317356B2 (en) 2009-12-25 2012-11-27 Au Optronics (Xiamen) Corp. Solar powered light-emitting device
JP2018148205A (ja) * 2017-03-02 2018-09-20 タレス 太陽電池セルアセンブリ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288337A (en) * 1992-06-25 1994-02-22 Siemens Solar Industries, L.P. Photovoltaic module with specular reflector
JP2613719B2 (ja) * 1992-09-01 1997-05-28 キヤノン株式会社 太陽電池モジュールの製造方法
JP3738129B2 (ja) * 1998-04-14 2006-01-25 三洋電機株式会社 太陽電池モジュール
JP2003101059A (ja) * 2001-09-27 2003-04-04 Sharp Corp 薄膜太陽電池
JP2004111453A (ja) * 2002-09-13 2004-04-08 Sharp Corp 太陽電池
CN100440547C (zh) * 2006-07-18 2008-12-03 侯国华 太阳能聚光电池模块
CN100541826C (zh) * 2008-03-05 2009-09-16 玉晶光电(厦门)有限公司 太阳能电池芯片保护结构

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009109084A1 (zh) * 2008-03-05 2009-09-11 玉晶光电(厦门)有限公司 太阳能电池芯片保护结构
US8317356B2 (en) 2009-12-25 2012-11-27 Au Optronics (Xiamen) Corp. Solar powered light-emitting device
CN102487092A (zh) * 2010-12-03 2012-06-06 西安中科麦特电子技术设备有限公司 高倍聚光太阳能光伏模组
JP2018148205A (ja) * 2017-03-02 2018-09-20 タレス 太陽電池セルアセンブリ

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