CN101237122A - Optic-generated microwave single slice photon integration part based on FP laser injection lock - Google Patents
Optic-generated microwave single slice photon integration part based on FP laser injection lock Download PDFInfo
- Publication number
- CN101237122A CN101237122A CNA2008100564297A CN200810056429A CN101237122A CN 101237122 A CN101237122 A CN 101237122A CN A2008100564297 A CNA2008100564297 A CN A2008100564297A CN 200810056429 A CN200810056429 A CN 200810056429A CN 101237122 A CN101237122 A CN 101237122A
- Authority
- CN
- China
- Prior art keywords
- laser
- section
- distributed feedback
- layer
- integrated device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a photoproduction microwave single chip photon integrated component on the basis of an FP laser injection locking, belonging to the photoelectronic device technical field, in particular to a single chip photon integrated component by adopting the FP laser double longitudinal mode injection locking to generate the high-frequency microwave. A DFB laser and one FP laser are integrated on one chip, wherein, the DFB laser is directly modulated or indirectly modulated, two modulation sidebands of the DFB laser lock two adjacent longitudinal modes of the FP laser, two locked adjacent longitudinal modes are heterodyne and are received by a photodetector, thereby obtaining the high-frequency microwave. The single chip photon integrated component realizes the single chip integration of related semiconductor photoelectronic devices, has high level of integration and novel structure, improves the performance and greatly reduces the volume of the component, and contributes to the improvement of the stability of the system; the processing technology is simple, the cost is low and the rate of finished products is high; the component is suitable for the large-scale production and application and has wide potential application in the high-speed communication field in the future.
Description
Technical field
The invention belongs to the opto-electronic device technical field, particularly a kind of photoproduction microwave single slice photon integrated device based on the injection locking of FP laser.
Technical background
The present invention is a kind of based on Fabry-Perot-type cavity (Fabry-Perot, FP) the photoproduction microwave single slice photon integrated device of the two longitudinal mode injection lockings of laser, produce high-frequency microwave by optical heterodyne then, its range of application is very extensive, comprises WLAN (wireless local area network), antenna remote control etc.At first briefly introduce high-frequency microwave or the millimeter wave importance in radio communication below, introduce the application of photoelectron technology in the millimeter wave radio communication then.
In recent years, along with the continuous development of fiber optic network and internet (Internet), be that voice, image, data, video and the multimedia service of carrier stimulated the demand of people for traffic rate greatly with Internet.Develop rapidly and be used widely based on the Fibre Optical Communication Technology of wavelength-division multiplex technique (WDM), become the most effectively transmission means of mains system physical layer.But then, the traffic rate of the Access Network of connection user terminal and trunk fiber network but also remains at low levels.At present, the Access Network that is in " first mile " among the whole communication link (or be called " last mile ") becomes the bottleneck of high-speed communication technology, and therefore high-speed access technology of future generation becomes the focus of Recent study.Among various access technologies, the high-speed radio access technology owing to have terminal movably flexibility receive much concern.Raising transmission rate efficient ways the most is to adopt the higher electromagnetic wave of frequency as communication carrier, therefore use than the present mobile communication carrier wave (millimeter wave that 800MHz～1.9GHz) frequency is higher (30GHz～300GHz), can support transmission rate to surpass the high-speed radio access of Gb/s.Because the potentiality that the microwave of millimere-wave band shows aspect high-speed radiocommunication, a plurality of countries such as the U.S., Japan, Germany are at present all in the research of carrying out the millimeter wave wireless access technology, and wherein the research contents of core comprises the generation and the transmission technology of access net system structure, millimeter wave.
Because millimeter wave has high frequency, if adopt traditional coaxial cable to transmit then its loss is very serious.Simultaneously, adopt the method generation in electric territory and processing millimeter-wave signal also to have the cost problem of higher.An effective solution is that the millimeter wave wireless access is combined with lightwave technology, utilizes light wave as the carrier transmission millimeter-wave signal, can effectively reduce its loss, promptly usually said RoF (Radio overFiber) technology.Simultaneously, can utilize lightwave technology to realize the generation of millimeter-wave signal, thereby reduce the complexity and the cost of wireless access system effectively.
If will on light wave, loading frequency be the millimeter wave of f, can directly utilize millimetre-wave generator produce frequency for the signal of f and adopt high-speed optical modulator with this signal loading to light wave.But, therefore limited the cost of connecting system because millimetre-wave generator is still very expensive with the high-speed optical modulator price that is operated on the millimeter wave frequency band at present.On the other hand, can adopt the method for optical heterodyne to produce millimeter-wave signal, promptly utilize two difference on the frequencies in photodetector, to be the f signal by difference frequency generation frequency for the light signal of f.Because this method does not need millimetre-wave generator and high-speed optical modulator, can reduce system cost greatly.Simultaneously, this method can also combine with light WDM technology, modulates a plurality of channels simultaneously, thereby further reduces the cost and the simplied system structure of whole system.Therefore, type millimeter wave wireless accessing network structure is simple, with low cost frequently for the equation of light, is very suitable for follow-on broadband radio access network.At present, the technology of utilizing light heterodyne method to produce microwave or millimeter wave mainly comprises schemes such as dual laser, mode-locked laser, light phase-locked loop, sideband injection locking.Below, the principle of sideband injection locking scheme is described, so that understand the characteristics and the advantage of the new unit that the present invention proposes.
In theory, the light signal of two difference on the frequencies laser output that is f is coupled, just can utilizes square detecting action of photodetector to obtain the microwave signal of frequency for f.But, the light source of using as optical communication, the live width of semiconductor laser is bigger, a common distributed feed-back type (Distributed Feedback, DFB) live width of semiconductor laser is often in the magnitude of MHz, therefore after two independently Distributed Feedback Laser carried out free beat frequency, the phase noise of the microwave signal that obtains was very big, can't satisfy the requirement of radio communication.A solution is to utilize injection locking (Injection Locking) to realize low phase noise.
Theoretical research and experiment all show, the light that a laser is sent is injected in another laser, wherein, the laser that is injected into is called from laser (slave), another laser is called main laser (master), if the wavelength when two lasers are freely worked enough near (wavelength difference is usually in the pm magnitude), and it is enough big to inject the power of light, wavelength from laser will equal main laser so, and the phase difference of two laser output light keeps invariable simultaneously.This phenomenon is exactly injection locking.Light heterodyne method and injection locking are combined generation microwave or millimeter-wave signal, can reduce phase noise greatly.Fig. 1 is present existing a kind of system schematic of utilizing light heterodyne method and injection locking to produce millimeter-wave signal, it comprises the main laser 1 of a tunable wave length, external modulator 2,5, two three-dB coupler of isolator 6, two from laser 7.External modulator is modulated the light of main laser output, therefore on the output spectrum of external modulator, can produce the modulation sideband, that equals a series of orders of modulating frequency at interval around the centre wavelength.This Shu Guang is injected into two respectively from laser through a three-dB coupler.If regulate the wavelength of main laser, (frequency of establishing them is respectively f to make certain two modulation sideband, in the external modulator output spectrum
1And f
2) just in time satisfy the condition of injection locking with two respectively from laser, swashing the frequency of penetrating from laser so will be locked in f respectively
1And f
2On.At this moment, this two bundles frequency is respectively f
1And f
2Light owing to be locking back gained, so its phase place is also all constant with the main laser maintenance.This two-beam is through after the three-dB coupler coupling, and it is poor to clap, and utilizes photodetector to receive again, and just can obtain frequency is f
2-f
1And the less microwave of phase noise.In this system, used three lasers altogether and in two lasers, injection locking has taken place, system is comparatively complicated, has certain problem on stability.In recent years, someone is (M.Ogusu, K.Inagaki, et al, " Carrier Generation and Data Transimission on Millimeter-Wave BandsUsing Two-Mode Locked Fabry-Perot Slave Lasers ", IEEE Transactions onMicrowave Theory and Techniques, vol.51, No.2, pp.382～391,2003) propose to utilize Fabry-Perot-type cavity (Fabry-Perot, FP) characteristic of many longitudinal modes of laser work, two longitudinal modes that make it can reduce the complexity of system so simultaneously by two modulation sideband, lockings of main laser.This system schematic as shown in Figure 2, it comprises the main laser 1 of a tunable wave length, external modulator 2, loop device 8 and conduct FP laser 9 from laser.Produce the millimeter wave carrier that frequency is f if desired, the chamber that needs to control the FP laser so is long, and making its longitudinal mode spacing is f.If the effective refractive index of FP laser waveguide is n
Eff, light speed in a vacuum is that c (equals 3 * 10
8M/s), the chamber is long to be L, and the longitudinal mode spacing of FP laser is c/2n so
EffL.Produce the millimeter wave carrier that frequency is f if desired, can control the long L in chamber of FP laser so, making its longitudinal mode spacing is f.Main laser is modulated, modulating frequency is f/2N (N is a positive integer) again, like this its+the N rank and-difference on the frequency of N contrast system sideband is exactly f.Regulate the main laser wavelength, make it+the N rank and-certain two adjacent longitudinal mode of N contrast system sideband and FP laser just in time satisfy the condition of injection locking respectively, the phase place of these two adjacent longitudinal modes of FP laser will keep constant with main laser so.It is poor that these two adjacent longitudinal modes are clapped, and utilizes photodetector to receive again, and just can obtain frequency is f and the less microwave of phase noise.
The light heterodyne method of report produces in the article of microwave at present, and the overwhelming majority is the system that adopts discrete device to build, and the report of monolithic integrated device seldom.As everyone knows, the system that discrete device is built is bulky complex often, and poor stability, and cost is also than higher.
Summary of the invention
At problems of the prior art, the purpose of this invention is to provide a kind of photoproduction microwave single slice photon integrated device based on the injection locking of FP laser, on same substrate that some devices are integrated, the function of realization photoproduction microwave.
For achieving the above object, the technical solution used in the present invention is:
A kind of photoproduction microwave single slice photon integrated device based on the injection locking of FP laser, an integrated Distributed Feedback Laser section 22 and a FP laser section 23 on same chip, specific implementation is:
The following epitaxial loayer of on N type substrate 11, growing successively: under-clad layer 12, lower waveguide layer 13, multiple quantum well active layer 14, grating layer 15, go up ducting layer 16, top covering 17, ohmic contact layer 19;
Entire device is divided into two sections, and one section is Distributed Feedback Laser section 22, and another section is as FP laser section 23; Have one section zone to remove the part of under-clad layer more than 12 between two sections and form isolation channel 24, the electricity that forms this Distributed Feedback Laser section 22 and FP laser section 23 is isolated, and forms a reflection end face of FP laser simultaneously;
In growth course, produce optical grating construction on the grating layer 15, and remove the grating in FP laser section 23 zones;
Entire device adopts ridge waveguide 21 structures, produces ridge waveguide 21 after outer layer growth is finished on top covering 17, and at ridge waveguide 21 both sides SiO
2Insulating barrier 18 is filled and led up, and erodes the SiO on the crestal culmination then
2
On N type substrate 11 and ohmic contact layer 19, be coated with N type electrode 10 and P type electrode 20 respectively.
The length of described Distributed Feedback Laser section 22 is 300～500 μ m, and the length of isolation channel 24 is 1～5 μ m, satisfies f=c/2n between the frequency f of the length L of FP laser section 23 and the microwave of generation
EffL, wherein, c is the light velocity in the vacuum, n
EffIt is the effective refractive index of FP laser waveguide.
Described Distributed Feedback Laser section 22 is as main laser, it is exported light modulate two adjacent longitudinal modes that two modulation sideband,s of back generation go to lock FP laser section 23, it is poor that blocked two adjacent longitudinal modes are clapped, and receives by photo-detector, just can obtain high-frequency microwave.
The width of described ridge waveguide 21 is 2～4 μ m, highly is 1.3～1.6 μ m, and its etching depth does not penetrate top covering 17 in manufacturing process.
Described integrated device further comprises, between Distributed Feedback Laser section 22 and isolation channel 24, increase an electroabsorption modulator section 25, Distributed Feedback Laser section 22 is carried out external modulation, and between Distributed Feedback Laser section 22 and electroabsorption modulator section 25, increase an electric distance piece 26.
The height of ridge waveguide 21 is 3.8～4.2 μ m in the zone of described electroabsorption modulator section 25, on under-clad layer 12 making and in manufacturing process its etching depth do not penetrate under-clad layer 12; Ridge waveguide 21 both sides SiO
2Insulating barrier 18 is filled and led up, and erodes the SiO on the crestal culmination then
2
The length of described electroabsorption modulator section 25 is 50～150 μ m, and the length of electric distance piece 26 is 30～50 μ m, and described electric distance piece 26 places do not have P type electrode 20 and ohmic contact layer 19.
The invention has the beneficial effects as follows, the related semiconductor opto-electronic device has been realized that monolithic is integrated, integrated level height, novel structure can improve the volume that performance can significantly reduce device again, help improving the stability of system; And manufacture craft is simple, cost is low, rate of finished products is high, is suitable for large-scale production and application, is with a wide range of applications in future high-speed communication field.
Description of drawings
Fig. 1 is based on the photoproduction microwave system schematic diagram of modulation sideband, injection locking;
Fig. 2 is based on the photoproduction microwave system schematic diagram of the two longitudinal mode injection lockings of FP laser;
Fig. 3 has been integrated Distributed Feedback Laser and FP laser is based on the photoproduction microwave monolithic integrated device of the two longitudinal mode injection lockings of FP laser;
Fig. 4 has been integrated Distributed Feedback Laser, EA modulator and FP laser is based on the photoproduction microwave monolithic integrated device of the two longitudinal mode injection lockings of FP laser.
Each number designation among the figure corresponds respectively to: 1. the main laser of tunable wave length; 2.LiNbO
3Modulator; 3. modulator direct current biasing; 4. modulator exchanges input; 5. isolator; 6.3 dB coupler; 7. from laser; 8. loop device; 9.FP laser; 10.N electrode; 11. substrate; 12. under-clad layer; 13. lower waveguide layer; 14. multiple quantum well active layer; 15. grating layer; 16. last ducting layer; 17. top covering; 18.SiO
2Insulating barrier; 18. ohmic contact layer; 20.P electrode; 21. ridge waveguide; 22.DFB laser section; 23.FP laser section; 24. isolation channel; 25.EA modulator segment; 26. electric distance piece.
Embodiment
The invention provides a kind of photoproduction microwave single slice photon integrated device based on the injection locking of FP laser.This device is by a Distributed Feedback Laser 22 and FP laser 23 integrated forming, and wherein Distributed Feedback Laser 22 is as main laser, and 23 conducts of FP laser are from laser.Chamber by control FP laser 23 is long, makes that its longitudinal mode spacing is f.Distributed Feedback Laser 22 is directly modulated, and (Electroabsorption, EA) modulator 25 carries out external modulation, thereby produces a series of modulation sideband,s in a perhaps integrated electric absorption.If modulating frequency is f/2N (N is a positive integer), like this its+the N rank and-difference on the frequency of N contrast system sideband is exactly f.Regulate its wavelength by the injection current or the temperature of regulating Distributed Feedback Laser, make it+the N rank and-certain two adjacent longitudinal mode of N contrast system sideband and FP laser just in time satisfy the condition of injection locking respectively, the phase place of these two adjacent longitudinal modes of FP laser will keep constant with main laser so.It is poor that these two adjacent longitudinal modes are clapped, and utilizes photodetector to receive again, and just can obtain frequency is f and the less microwave of phase noise.
Below in conjunction with drawings and Examples photoproduction microwave single slice photon integrated device of the present invention is further detailed, following examples are respectively on the basis of Distributed Feedback Laser directly being modulated with external modulation, utilize the two longitudinal mode injection lockings of FP laser to produce the single slice photon integrated device of high-frequency microwave.
Fig. 3 is a kind of integrated Distributed Feedback Laser and FP laser, based on the photoproduction microwave monolithic integrated device of the two longitudinal mode injection lockings of FP laser.Operation wavelength on the basis that Distributed Feedback Laser is directly modulated, utilizes the two longitudinal mode injection lockings of FP laser to produce the InGaAsP/InP base single slice photon integrated device of high-frequency microwave in the 1550nm wave band.
This device is will be on a same chip integrated Distributed Feedback Laser 22 and a FP laser 23.
At first, the epitaxial material of device is as described below.By metal organic chemical vapor deposition (Metal OrganicChemical Vapor Deposition, MOCVD) method, at first once extension, growing n-type InP under-clad layer 12 (thickness 200nm, doping content about 1 * 10 successively on n type substrate 11 materials
18Cm
-2), 100nm be altogether unjustifiable doping lattice match InGaAsP ducting layer 13 (light wavelength of fluorescence 1.2 μ m), strain InGaAsP Multiple Quantum Well 14 (light wavelength of fluorescence 1.52 μ m, 7 quantum well: the wide 8nm of trap, 0.5% compressive strain, build wide 10nm, lattice matched materials, light wavelength of fluorescence 1.2 μ m), the InGaAsP grating material layer 15 that 70nm is thick.Next produce optical grating construction by the method for holographic interference exposure, and by the grating in the method removal FP laser zone of photoetching and wet etching.And then utilize the thick p type of MOCVD secondary epitaxy growth 100nm lattice match InGaAsP ducting layer 16 (light wavelength of fluorescence 1.2 μ m, doping contents about 1 * 10
17Cm
-2), (doping content is from 3 * 10 for the thick P type of 1.7 μ m InP top covering 17
17Cm
-2Be gradually varied to 1 * 10
18Cm
-2) and thick p type InGaAs ohmic contact layer 19 (doping content＞1 * 10 of 100nm
19Cm
-2).
Entire device adopts ridge waveguide 21 structures, produces ridge waveguide by the method for photoetching and dry etching, the wide 3 μ m that are of ridge, high 1.5 μ m.(Plasma EnhancedChemical Vapour Deposition, method PECVD) is at ridge waveguide both sides SiO by plasma-reinforced chemical vapor deposition
2Insulating barrier 18 is filled and led up, and erodes the SiO on the crestal culmination then
2Method with sputter is made P electrode 20 and N electrode 10.The material of P electrode is the Cr/Au alloy, and the material of N electrode is the Ti/Au alloy.Wherein, the P electrode comprises two parts: the long 400 μ m of a part, as the P electrode of Distributed Feedback Laser 22; The long 780 μ m of another part are as the P electrode of FP laser 23.One section 5 long zone of μ m arranged between two parts P electrode, this zone is by inductively coupled plasma (Inductively Coupled Plasma, ICP) method of dry etching carves isolation channel 24, its etching depth need reach under-clad layer, the electricity that forms this Distributed Feedback Laser 22 and FP laser 23 is isolated, and can form a reflection end face of FP laser 23 simultaneously.
The characteristic parameter of this example is: in the integrated device of making, the threshold current representative value of Distributed Feedback Laser is 10mA, and side mode suppression ratio reaches more than the 40dB.The threshold current representative value of FP laser is 20mA.Microwave signal is carried on the Distributed Feedback Laser injection current, realizes the direct modulation of Distributed Feedback Laser.Output light can obtain frequency at 60GHz, apart from the monolateral band phase noise at the carrier wave 100kHz place microwave less than-84dBc/Hz after photodetector.
Fig. 4 is a kind of integrated Distributed Feedback Laser, (Electroabsorption, EA) modulator and FP laser are based on the photoproduction microwave monolithic integrated device of the two longitudinal mode injection lockings of FP laser in electric absorption.Operation wavelength on the basis of Distributed Feedback Laser external modulation, utilizes the two longitudinal mode injection lockings of FP laser to produce the InGaAsP/InP base single slice photon integrated device of high-frequency microwave in the 1550nm wave band.
This device is will be on a same chip integrated Distributed Feedback Laser 22, an EA modulator 25 and a FP laser 23.
At first, the epitaxial material of device is as described below.By mocvd method, at first once extension, growing n-type InP under-clad layer 12 (thickness 200nm, doping content about 1 * 10 successively on n type substrate 11 materials
18Cm
-2), 100nm be altogether unjustifiable doping lattice match InGaAsP ducting layer 13 (light wavelength of fluorescence 1.2 μ m), strain InGaAsP Multiple Quantum Well 14 (light wavelength of fluorescence 1.52 μ m, 7 quantum well: the wide 8nm of trap, 0.5% compressive strain, build wide 10nm, lattice matched materials, light wavelength of fluorescence 1.2 μ m), the InGaAsP grating material layer 15 that 70nm is thick.Next produce optical grating construction by the method for holographic interference exposure, and by the method removal EA modulator of photoetching and wet etching and the grating in the FP laser zone.And then utilize the thick p type of MOCVD secondary epitaxy growth 100nm lattice match InGaAsP ducting layer 16 (light wavelength of fluorescence 1.2 μ m, doping contents about 1 * 10
17Cm
-2), (doping content is from 3 * 10 for the thick P type of 1.7 μ m InP top covering 17
17Cm
-2Be gradually varied to 1 * 10
18Cm
-2) and thick p type InGaAs ohmic contact layer 19 (doping content＞1 * 10 of 100nm
19Cm
-2).
Entire device adopts ridge waveguide 21 structures, produces ridge waveguide by the method for photoetching and dry etching, the wide 3 μ m that are of ridge, the high 1.5 μ m of the ridge waveguide of Distributed Feedback Laser section 22 and FP laser section 23, the high 4 μ m of the ridge waveguide of EA section 25.(Plasma Enhanced ChemicalVapour Deposition, method PECVD) is at ridge waveguide both sides SiO by plasma-reinforced chemical vapor deposition
2Insulating barrier 18 is filled and led up, and erodes the SiO on the crestal culmination then
2Method with sputter is made P electrode 20 and N electrode 10.The material of P electrode is the Cr/Au alloy, and the material of N electrode is the Ti/Au alloy.Wherein, the P electrode comprises three parts, and its length is respectively 400 μ m, 100 μ m and 780 μ m, and they are the P electrode as Distributed Feedback Laser 22, EA modulator 25 and FP laser 23 successively.One section 40 long zone 26 of μ m arranged between the P electrode of Distributed Feedback Laser 22 and EA modulator 25, and this regional ohmic contact layer 19 is corroded, and the electricity that forms Distributed Feedback Laser 22 and EA modulator 25 is isolated.One section 5 long zone of μ m arranged between the P electrode of EA modulator 25 and FP laser 23, this zone is by inductively coupled plasma (Inductively CoupledPlasma, ICP) method of dry etching carves isolation channel 24, its etching depth need reach under-clad layer, the electricity that forms this EA modulator 25 and FP laser 23 is isolated, and can form a reflection end face of FP laser 23 simultaneously.
The characteristic parameter of this example is: in the integrated device of making, the threshold current representative value of Distributed Feedback Laser is 10mA, and side mode suppression ratio reaches more than the 40dB.The threshold current representative value of FP laser is 20mA.Microwave signal is carried on the Distributed Feedback Laser injection current, realizes the direct modulation of Distributed Feedback Laser.Output light can obtain frequency at 60GHz, apart from the monolateral band phase noise at the carrier wave 100kHz place microwave less than-84dBc/Hz after photodetector.
Claims (7)
1. the photoproduction microwave single slice photon integrated device based on the injection locking of FP laser is characterized in that, an integrated Distributed Feedback Laser section (22) and a FP laser section (23) on same chip, and specific implementation is:
The following epitaxial loayer of on N type substrate (11), growing successively: under-clad layer (12), lower waveguide layer (13), multiple quantum well active layer (14), grating layer (15), go up ducting layer (16), top covering (17), ohmic contact layer (19);
Entire device is divided into two sections, and one section is Distributed Feedback Laser section (22), and another section is as FP laser section (23); Have one section zone to remove the above part of under-clad layer (12) between two sections and form isolation channel (24), the electricity that forms this Distributed Feedback Laser section (22) and FP laser section (23) is isolated, and forms a reflection end face of FP laser simultaneously;
Grating layer (15) is gone up and produce optical grating construction in growth course, and removes the grating in FP laser section (23) zone;
Entire device adopts ridge waveguide (21) structure, produces ridge waveguide (21) after outer layer growth is finished on top covering (17), and at ridge waveguide (21) both sides SiO
2Insulating barrier (18) is filled and led up, and erodes the SiO on the crestal culmination then
2
On N type substrate (11) and ohmic contact layer (19), be coated with N type electrode (10) and P type electrode (20) respectively.
2. integrated device according to claim 1, it is characterized in that: the length of described Distributed Feedback Laser section (22) is 300～500 μ m, the length of isolation channel (24) is 1～5 μ m, satisfies f=c/2n between the frequency f of the length L of FP laser section (23) and the microwave of generation
EffL, wherein, c is the light velocity in the vacuum, n
EffIt is the effective refractive index of FP laser waveguide.
3. integrated device according to claim 1, it is characterized in that, Distributed Feedback Laser section (22) is as main laser, it is exported light modulate two adjacent longitudinal modes that two modulation sideband,s of back generation go to lock FP laser section (23), it is poor that blocked two adjacent longitudinal modes are clapped, receive by photo-detector, just can obtain high-frequency microwave.
4. integrated device according to claim 1 is characterized in that, the width of described ridge waveguide (21) is 2～4 μ m, highly is 1.3～1.6 μ m, and its etching depth does not penetrate top covering (17) in manufacturing process.
5. integrated device according to claim 1, it is characterized in that, described integrated device further comprises, between Distributed Feedback Laser section (22) and isolation channel (24), increase an electroabsorption modulator section (25), Distributed Feedback Laser section (22) is carried out external modulation, and between Distributed Feedback Laser section (22) and electroabsorption modulator section (25), increase an electric distance piece (26).
6. integrated device according to claim 5, it is characterized in that, the height of ridge waveguide (21) is 3.8～4.2 μ m in the zone of described electroabsorption modulator section (25), under-clad layer (12) go up making and in manufacturing process its etching depth do not penetrate under-clad layer (12); Ridge waveguide (21) both sides SiO
2Insulating barrier (18) is filled and led up, and erodes the SiO on the crestal culmination then
2
7. integrated device according to claim 5, it is characterized in that, the length of described electroabsorption modulator section (25) is 50～150 μ m, and the length of electric distance piece (26) is 30～50 μ m, and described electric distance piece (26) locates not have P type electrode (20) and ohmic contact layer (19).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100564297A CN100570969C (en) | 2008-01-18 | 2008-01-18 | Photoproduction microwave single slice photon integrated device based on the injection locking of FP laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100564297A CN100570969C (en) | 2008-01-18 | 2008-01-18 | Photoproduction microwave single slice photon integrated device based on the injection locking of FP laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101237122A true CN101237122A (en) | 2008-08-06 |
| CN100570969C CN100570969C (en) | 2009-12-16 |
Family
ID=39920538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2008100564297A Expired - Fee Related CN100570969C (en) | 2008-01-18 | 2008-01-18 | Photoproduction microwave single slice photon integrated device based on the injection locking of FP laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100570969C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104662677A (en) * | 2012-09-28 | 2015-05-27 | 佳能株式会社 | Light source and optical coherence tomography apparatus including the light source |
| CN104966991A (en) * | 2015-06-29 | 2015-10-07 | 武汉电信器件有限公司 | Manufacturing method for novel high speed semiconductor laser |
| CN106785916A (en) * | 2017-02-27 | 2017-05-31 | 武汉光迅科技股份有限公司 | A kind of Electroabsorption Modulated Laser and its manufacture method |
| CN108923259A (en) * | 2018-07-18 | 2018-11-30 | 中国科学院半导体研究所 | The production method of two-mode laser THz pumping source |
| CN112993753A (en) * | 2021-02-07 | 2021-06-18 | 桂林雷光科技有限公司 | Monolithic integrated waveguide device and integrated semiconductor chip thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101719630B (en) * | 2009-12-08 | 2012-05-16 | 清华大学 | Bend waveguide dual-wavelength laser device used for all-optical clock recovery |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4907234A (en) * | 1989-05-04 | 1990-03-06 | The United States Of America As Represented By The Secretary Of The Navy | Monolithic laser diode structure for microwave generation |
-
2008
- 2008-01-18 CN CNB2008100564297A patent/CN100570969C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104662677A (en) * | 2012-09-28 | 2015-05-27 | 佳能株式会社 | Light source and optical coherence tomography apparatus including the light source |
| US10109762B2 (en) | 2012-09-28 | 2018-10-23 | Canon Kabushiki Kaisha | Light source and optical coherence tomography apparatus including the light source |
| CN104966991A (en) * | 2015-06-29 | 2015-10-07 | 武汉电信器件有限公司 | Manufacturing method for novel high speed semiconductor laser |
| CN104966991B (en) * | 2015-06-29 | 2018-07-10 | 武汉电信器件有限公司 | A kind of production method of novel high speed semiconductor laser |
| CN106785916A (en) * | 2017-02-27 | 2017-05-31 | 武汉光迅科技股份有限公司 | A kind of Electroabsorption Modulated Laser and its manufacture method |
| CN106785916B (en) * | 2017-02-27 | 2019-07-26 | 武汉光迅科技股份有限公司 | A kind of Electroabsorption Modulated Laser and its manufacturing method |
| CN108923259A (en) * | 2018-07-18 | 2018-11-30 | 中国科学院半导体研究所 | The production method of two-mode laser THz pumping source |
| CN108923259B (en) * | 2018-07-18 | 2020-05-19 | 中国科学院半导体研究所 | Method for manufacturing THz pumping source of double-mode laser |
| CN112993753A (en) * | 2021-02-07 | 2021-06-18 | 桂林雷光科技有限公司 | Monolithic integrated waveguide device and integrated semiconductor chip thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100570969C (en) | 2009-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100570970C (en) | Utilize the SOA four-wave mixing effect to produce the integrated opto-electronic device of high-frequency microwave | |
| CN101566777B (en) | Integrated optoelectronic device used for generating high-frequency microwaves based on sideband injection locking | |
| CN101222118B (en) | Integrated opto-electronic device for generating high-frequency microwave by light heterodyne method | |
| CA2185132C (en) | Generation of radio frequency modulated optical radiation | |
| CN100570969C (en) | Photoproduction microwave single slice photon integrated device based on the injection locking of FP laser | |
| CN102419460B (en) | Coupling waveguide, manufacture method thereof and semiconductor photoelectronic device applying coupling waveguide | |
| Zhang et al. | A full-duplex WDM-RoF system based on tunable optical frequency comb generator | |
| CN107910746B (en) | A kind of reflective semiconductor optical amplifier | |
| CN101826699B (en) | Manufacturing method for monolithic integrated device of electrical absorption modulator and self-pulsation laser | |
| CN104953468A (en) | Four-segment amplification feedback laser structure for chaotic light emission | |
| Yu et al. | A widely tunable directly modulated DBR laser with high linearity | |
| Khan et al. | 100 Gb/s single channel transmission using injection-locked 1621 nm quantum-dash laser | |
| Dubray et al. | 20Gb/s PAM-4 transmission from 35 to 90° C by modulating a silicon ring resonator modulator with 2Vpp | |
| Khan | Towards InAs/InP quantum-dash laser-based ultra-high capacity heterogeneous optical networks: A review | |
| CN104617486A (en) | Monolithic integrated multi-wavelength semiconductor mode-locked laser | |
| CN102098108B (en) | Photo-induced microwave signal source and method | |
| CN104409956B (en) | More microwave local oscillation source generating devices based on injection locking quantum dot mode-locked laser | |
| CN102237637B (en) | Reconstruction equivalent chirp (REC) double-wavelength laser for all-optical clock recovery | |
| CN102338940A (en) | Electric absorption modulator based on ring cavity | |
| CN101719630B (en) | Bend waveguide dual-wavelength laser device used for all-optical clock recovery | |
| CN102355302A (en) | ROF transmission method of terminal selectable frequency band/bandwidth based on optical phase lock | |
| Zhou et al. | Transmission of 20 Gb/s PAM-4 signal over 20 km optical fiber using a directly modulated tunable DBR laser | |
| Pan et al. | Widely tunable amplified feedback laser with beating-frequency covering 60-GHz band | |
| CN111147144B (en) | Chaotic light secret communication transceiver module of large key space | |
| Shizhong et al. | Advance in microwave photonics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091216 Termination date: 20150118 |
|
| EXPY | Termination of patent right or utility model |