CN101232000B - Wireless overall interconnect line assembly based on aluminum nitride heat conduction layer - Google Patents
Wireless overall interconnect line assembly based on aluminum nitride heat conduction layer Download PDFInfo
- Publication number
- CN101232000B CN101232000B CN2008100322194A CN200810032219A CN101232000B CN 101232000 B CN101232000 B CN 101232000B CN 2008100322194 A CN2008100322194 A CN 2008100322194A CN 200810032219 A CN200810032219 A CN 200810032219A CN 101232000 B CN101232000 B CN 101232000B
- Authority
- CN
- China
- Prior art keywords
- interconnected
- conducting layer
- heat conduction
- aluminium nitride
- nitride heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
A wireless global interconnected component based on AlN heat conduction layer in the field of IC technology comprises interconnected holes, a silicon substrate, a metal isolation layer, an AlN heat conduction layer, a thermal fin and a feeding slit, wherein the interconnected holes are connected with the metal isolation layer at one end and extended to the AlN heat conduction layer at the other end; and the feeding slit is formed in the metal isolation layer by etching. The invention can adjust the work frequency band and the transmission loss by adjusting the pitch between the interconnected holes, the length of the interconnected holes, the shape and the size of the slit in the metal isolation layer, the thickness of the AlN heat conduction layer and the waveguide structure in the AlN heat conduction layer. The invention can greatly reduce the size of the global interconnects on chip and greatly improve the transmission efficiency. Additionally, the invention can freely select the waveguide structure in the AlN heat conduction layer, freely adjust the work frequency and cover the frequencies that are with difficulties or poor effect to be covered by prior global metal interconnected component and wireless global interconnect component.
Description
Technical field
The present invention relates to a kind of interconnection line of technical field of integrated circuits, specifically is a kind of wireless global interconnection line assembly based on the aluminium nitride heat-conducting layer.
Background technology
Along with the continuous development of microelectronic technique, the integrated circuit component scale is as one-tenth geometric growth as described in More's law.Micron, submicrometer processing ripe and using makes people pay close attention to the problems of Signal Integrity of interconnection line, problems such as promptly globally interconnected transmission delay problem, interconnecting line power consumption problem and interconnection line reliability all the more.Based on above-mentioned consideration, many scholars propose various novel interconnected systemss and wish to dwindle the area that the global interconnect line component takies and improve its performance.These novel interconnected systemss mainly comprise: based on wireless telecommunication systems antenna integrated on the sheet, based on the nanometer interconnected systems of carbon nano-tube with based on the optical interconnection system of optical fiber.Yet, above-mentioned nanometer interconnected systems and optical interconnection system exist technology immature, with defectives such as the incompatible and cost of main stream of CMOS technology is high; And that wireless telecommunication systems takies on the sheet area is bigger, and simultaneously because its efficiency of transmission of size restrictions of on-chip antenna is lower, it is extremely low especially to be lower than in the frequency range of 15GHz efficiency of transmission.
Find through literature search prior art, novel global interconnect system is one of focus of studying in the modern integrated circuits technology, people such as A.Naeemi are published in the article of electronics and electrical engineering association electronic device magazine (IEEE Transactions on Electron Devices) the 1st phase in January, 2007: single wall carbon nano-tube is as this locality of very lagre scale integrated circuit (VLSIC), the design and performance modeling (the Design and Performance Modeling for Single-walled Carbon Nanotubes asLocal of half overall situation and global interconnect line component, Semiglobal, and Global Interconnects in Gigascale IntegratedSystems), propose and analyzed the application of single wall carbon nano-tube in very lagre scale integrated circuit (VLSIC) is interconnected, show and compare traditional metal interconnection line by the carbon nano-tube interconnection line to have a parasitic parameter little, advantages such as loss is low, yet it exists and the compatibility issue that has CMOS technology now, the high defectives such as complexity and high cost of manufacture of making, the more important thing is, this technology is not in the problem that fundamentally solves existing interconnection line, along with further developing of technology, its parasitic parameter effect will become one of main bottleneck of the interconnected performance of restriction high speed; People such as A.L.Glebov are published in the article of electronics and electrical engineering association photon technology wall bulletin (IEEE PhotonicsTechnology Letters) the 4th phase in April, 2007: directly be overlapped on the optical interconnection assembly (DirectAttach of Photonic Components on Substrates with Optical Interconnects) on the medium, proposed directly to be overlapped on the optical interconnection technology on the medium, obtained very high transmission rate, yet this technology and existing main stream of CMOS technology are incompatible, and high cost also allows the people step back.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art and defective, a kind of wireless global interconnection line assembly based on the aluminium nitride heat-conducting layer is provided, make it dwindle area on the sheet that the global interconnect line component takies effectively, and significantly improve its transmission performance, be expected to fundamentally solve the interconnection line problems of Signal Integrity of restriction high speed circuit development.
The present invention is achieved by the following technical solutions, the present invention includes: interconnected perforation, silicon chip, metallic spacer, aluminium nitride heat-conducting layer, fin and feed gaps.Described fin is below, and its top is but changes the aluminium heat-conducting layer that the top is metallic spacer and feed gaps again, the top silicon chip and interconnected perforation.Interconnected perforation one end links to each other with metallic spacer, and the other end gos deep into the aluminium nitride heat-conducting layer.Etching feed gaps in the metallic spacer.
Described interconnected perforation is a balanced feeding, can directly link to each other with low noise amplifier, output buffer, input etc. on power amplifier, the sheet on the sheet.
Across and into the aluminium nitride thermal insulation layer, described feed gaps can be shapes such as rectangle, square, circle, ellipse to the etching feed gaps for interconnected perforation in the described metallic spacer.
Described metallic spacer can be formed by semiconductor technology such as physical vapor deposition (PVD), chemical vapor deposition methods such as (CVD).Described metallic spacer can be metal and alloys such as aluminium, copper, also can be other high conductivity material.
Described aluminium nitride heat-conducting layer is the main thoroughfare of signal transmission, and its citation form can be a dielectric waveguide, also can be medium integrated waveguide (SIW).
Described silicon chip and fin all are the essential assemblies in the high speed CMOS integrated circuit.
The thickness of the shape in slit and size, aluminium nitride heat-conducting layer and regulate its working band and loss in the length of the present invention by the spacing of regulating interconnected perforation, interconnected perforation, the metallic spacer to the waveguiding structure of changing in the aluminium heat-conducting layer.
The present invention compares with prior art, and its effect is positive and tangible, and the present invention is because adopted the feed form of interconnected perforation, the size that can reduce global interconnect line component on the sheet significantly; Owing to adopt the aluminium nitride heat-conducting layer to carry out the useful signal transmission, can significantly improve its efficiency of transmission.In addition, the present invention can freely select the waveguiding structure in the aluminium nitride heat-conducting layer, can its operating frequency of free adjustment, can cover that existing metal global interconnect line component and wireless global interconnection line assembly are difficult to cover or the frequency range of poor effect.
Description of drawings
Fig. 1 is the wireless global interconnection line modular construction schematic diagram that the present invention is based on the aluminium nitride heat-conducting layer;
Fig. 2 is the stickogram and the transmission coefficient figure of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated: present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, present embodiment comprises: interconnected perforation 1, silicon chip 2, metallic spacer 3, aluminium nitride heat-conducting layer 4, fin 5 and feed gaps 6.Described interconnected perforation 1 one ends link to each other with described metallic spacer 3, and an end gos deep into described aluminium nitride heat-conducting layer 4.Described fin 5 is below, and its top is described but changes aluminium heat-conducting layer 4, and the top is described metallic spacer 2 and described feed gaps 6 again, and the top is silicon chip 2 and interconnected perforation 1.
Described interconnected perforation 1 is a balanced feeding, can directly link to each other with low noise amplifier, output buffer, input etc. on power amplifier, the sheet on the sheet.
The described feed gaps 6 described interconnected perforation 1 of etching are across and into described aluminium nitride thermal insulation layer 3 in the described metallic spacer 2, and described feed gaps 6 can be shapes such as rectangle, square, circle, ellipse.
Described metallic spacer 3 can be formed by semiconductor technology such as physical vapor deposition (PVD), chemical vapor deposition methods such as (CVD).Described metallic spacer 3 can be metal and alloys such as aluminium, copper, also can be other high conductivity material.
Described aluminium nitride heat-conducting layer 4 is main thoroughfares of signal transmission, and its citation form can be a dielectric waveguide, also can be medium integrated waveguide (SIW).
Described silicon chip 2 and fin 5 all are the essential assemblies in the high speed CMOS integrated circuit.
The thickness of the shape in slit and size, aluminium nitride heat-conducting layer and regulate its working band and loss in the length of present embodiment by the spacing of regulating interconnected perforation, interconnected perforation, the metallic spacer to the waveguiding structure of changing in the aluminium heat-conducting layer.
Between 20 to 100 microns of the spacing adjustable ranges of above-mentioned interconnected perforation, generally between 0.2 to 3 millimeter, aluminium nitride heat-conducting layer thickness is generally between 0.5 to 4 millimeter for the length adjustment scope of interconnected perforation.
Fig. 1 is the structural representation of present embodiment, specifically is of a size of: described feed perforation is cylindrical, and diameter is 20 microns, and center distance is 40 microns; Described feed perforation length is respectively 0.5 millimeter and 1.5 millimeters; The thickness of described silicon chip is 500 microns, and relative dielectric constant is 11.9, and conductance is 10 ohmcms; Described feed gaps is a square, and the length of side is 400 microns; Described aluminium nitride heat-conducting layer thickness is 2mm, and relative dielectric constant is 8.8; Transmission waveguide is a rectangle medium integrated waveguide in the described aluminium nitride heat-conducting layer, and cross-sectional sizes is 8 millimeters and takes advantage of 2 millimeters; Interconnect distance is 10 millimeters.
Fig. 2 is the stickogram and the transmission coefficient figure of present embodiment: dotted line is a reflection coefficient, and solid line is a transmission coefficient.As can be seen from the figure this present embodiment global interconnect line component can two-frequency operation, and only is about 6dB near the second working band 10mm loss the 8GHz.
As shown in Figure 2, present embodiment is far superior to existing wireless telecommunication systems and metal interconnection system.
Claims (2)
1. wireless global interconnection line assembly based on the aluminium nitride heat-conducting layer, comprise: interconnected perforation (1), silicon chip (2), metallic spacer (3), aluminium nitride heat-conducting layer (4), fin (5) and feed gaps (6), it is characterized in that, described fin (5) is below, its top is aluminium nitride heat-conducting layer (4), the top is metallic spacer (2) and feed gaps (6) again, the top is silicon chip (2) and interconnected perforation (1), described interconnected perforation (1) one end links to each other with described metallic spacer (3), and an end gos deep into described aluminium nitride heat-conducting layer (4);
Described interconnected perforation (1), its spacing scope are 20 microns to 100 microns;
Described interconnected perforation (1), its length range are 0.2 millimeter to 3 millimeters;
Described feed gaps (6), its shape are rectangle, square, circle or oval;
Described aluminium nitride heat-conducting layer (4) is the main thoroughfare of signal transmission, and its form is a dielectric waveguide;
Described aluminium nitride heat-conducting layer (4), its thickness are 0.5 millimeter to 4 millimeters.
2. the wireless global interconnection line assembly based on the aluminium nitride heat-conducting layer according to claim 1 is characterized in that described interconnected perforation (1) is a balanced feeding, directly links to each other with low noise amplifier, output buffer, input on power amplifier, the sheet on the sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100322194A CN101232000B (en) | 2008-01-03 | 2008-01-03 | Wireless overall interconnect line assembly based on aluminum nitride heat conduction layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100322194A CN101232000B (en) | 2008-01-03 | 2008-01-03 | Wireless overall interconnect line assembly based on aluminum nitride heat conduction layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101232000A CN101232000A (en) | 2008-07-30 |
| CN101232000B true CN101232000B (en) | 2010-07-21 |
Family
ID=39898332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100322194A Expired - Fee Related CN101232000B (en) | 2008-01-03 | 2008-01-03 | Wireless overall interconnect line assembly based on aluminum nitride heat conduction layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101232000B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1250548A (en) * | 1997-01-10 | 2000-04-12 | 艾利森电话股份有限公司 | Microstrip distribution array for group antenna and such group antenna |
| CN1411620A (en) * | 1999-12-16 | 2003-04-16 | 奥根流动电话通讯公司 | Slot antenna device |
| CN1787284A (en) * | 2004-12-09 | 2006-06-14 | 上海联能科技有限公司 | Micro band slot array antenna |
-
2008
- 2008-01-03 CN CN2008100322194A patent/CN101232000B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1250548A (en) * | 1997-01-10 | 2000-04-12 | 艾利森电话股份有限公司 | Microstrip distribution array for group antenna and such group antenna |
| CN1411620A (en) * | 1999-12-16 | 2003-04-16 | 奥根流动电话通讯公司 | Slot antenna device |
| CN1787284A (en) * | 2004-12-09 | 2006-06-14 | 上海联能科技有限公司 | Micro band slot array antenna |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101232000A (en) | 2008-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20230088545A1 (en) | Waveguide interconnect bridges | |
| JP5948844B2 (en) | Waveguide, interposer substrate including the same, module, and electronic device | |
| US11670569B2 (en) | Channeled lids for integrated circuit packages | |
| CN104685578A (en) | Forming transparent devices on surfaces | |
| CN102208376A (en) | Semiconductor device | |
| US11894282B2 (en) | Vented lids for integrated circuit packages | |
| CN101778554B (en) | Radiating system | |
| CN106910725A (en) | A kind of encapsulating structure of semiconductor chip | |
| Qin et al. | Experimental characterization and modeling of the bending strain effect on flexible microwave diodes and switches on plastic substrate | |
| Basha et al. | Analysis of crosstalk effects for ternary logic MWCNT bundled through silicon vias | |
| CN101232000B (en) | Wireless overall interconnect line assembly based on aluminum nitride heat conduction layer | |
| CN103199086A (en) | Silicon-based adapter plate with micro-channel structure with shielding function and manufacturing method thereof | |
| CN106653930B (en) | Phasmon enhancing photodetector based on semiconductor nano material and preparation method thereof | |
| JP2004179257A (en) | Semiconductor device equipped with heat radiation structure | |
| CN106653712A (en) | Heat dissipation structure and processing technology for single-tube IGBT (Insulated Gate Bipolar Transistor) | |
| US20100224250A1 (en) | Solar cell device structure | |
| US6320746B2 (en) | Heat sink system | |
| CN206422217U (en) | Frequency reconfigurable couple feed loop aerial | |
| US6333850B1 (en) | Heat sink system | |
| More et al. | Wireless interconnects for inter-tier communication on 3D ICs | |
| Li et al. | Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials | |
| Chen et al. | Terahertz flip-assembled-CPW-waveguide transition structure for InP DHBT MMIC package | |
| CN205545157U (en) | Radiating face down chip linear power amplifier of balance of high yield and mobile terminal thereof | |
| JP2004312397A (en) | Electromagnetic wave generator | |
| CN205545158U (en) | Face down chip linear power amplifier of high yield and mobile terminal thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100721 Termination date: 20210103 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |