CN101219791B - Method for producing high purity ultra-fine silicon dioxide - Google Patents
Method for producing high purity ultra-fine silicon dioxide Download PDFInfo
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- CN101219791B CN101219791B CN2008100139748A CN200810013974A CN101219791B CN 101219791 B CN101219791 B CN 101219791B CN 2008100139748 A CN2008100139748 A CN 2008100139748A CN 200810013974 A CN200810013974 A CN 200810013974A CN 101219791 B CN101219791 B CN 101219791B
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Abstract
The invention discloses a producing method, in particular to a method for producing high-purity ultrafine silicon dioxide. The method for producing the high-purity ultrafine silicon dioxide is specially characterized in that processed high-pressure gas arrives at a nozzle of a jet mill through a stainless steel pipe; after the high-pressure gas is processed by the nozzle of the jet mill, supersonic high-speed gas is formed; at the same time, the gas volume ejected by the jet mill expands instantaneously to drive raw materials entering from a feed inlet to move with a high speed and collide toeach other to achieve the goal of crashing. The invention has the advantages of that, 1 purifying technology that purifying solution is formulated and discharged without pollution; 2 no dust is discharged during the crashing process; 3 no impurity enters during the crashing process; 4 the product is gathered by adopting full-auto vacuum package; and 5 the product has fine granularity, even distribution and regular feature.
Description
(1) technical field
The present invention relates to a kind of production method, particularly a kind of production method of high purity ultra-fine silicon dioxide.
(2) background technology
High-purity silicon dioxide is to produce high-tech sector indispensable material such as semiconductor material, unicircuit, photoconductive fiber, glass fibre, and it has stable and unique physical and chemical performance.At present, the preparation high-purity silicon dioxide is divided into natural method and synthesis method two big classes, all has the difficult problem of separating not thoroughly, can't effectively improve silicon-dioxide purity, and the technology that also has is too complicated, productive expense is high.
(3) summary of the invention
The present invention is in order to remedy the deficiencies in the prior art, provide a kind of technology simple, separate the production method of high purity ultra-fine silicon dioxide completely.
The present invention is achieved through the following technical solutions:
A kind of production method of high purity ultra-fine silicon dioxide, its special character is: the high pressure gas after the processing arrive the comminution by gas stream machine nozzle with 0.6MPa-1.2MPa pressure through stainless steel pipes, after the comminution by gas stream machine nozzle is handled, form 1-3 times of high-speed gas of supersonic speed; Simultaneously, from the gas volume instantaneous expansion of nozzle ejection, pressure is reduced to normal pressure, and temperature moment is reduced to below 20 degrees centigrade, drives the starting material high-speed motion and the collision mutually that are entered by charging opening, reaches the pulverizing purpose; Starting material are the silicon-dioxide powdery of crystal type purity 99.90%-99.99%, the finished product purity 99.990%-99.999%, granularity 5000-10000 order.
The production method of high purity ultra-fine silicon dioxide of the present invention, it further improves and is: the treating processes of described high pressure gas is as follows: clean fresh air compresses through air compressor, forms the 0.6-1.2MPa high pressure gas; Enter gas-holder through stainless steel pipes and carry out oily water separation; Enter strainer and carry out secondary filter, form more purified high pressure gas; The freeze drier that then enters negative 40 degrees centigrade of dew point carries out lyophilize; Enter strainer again and carry out high-accuracy filtration, finally form the low temperature high-purity pressure gas.
The production method of high purity ultra-fine silicon dioxide of the present invention, at first adopt high-abrasive material to carry out the coating processing to Jet Mill inwall and inner-walls of duct in the comminution by gas stream process, inside coating is handled main component: polyurethane high molecule material and high-purity silicon dioxide.
The present invention has the following advantages: 1 purification techniques: configuration purification solution, discharge pollution-free; 2 crushing process do not have dust discharge; 3 crushing process inclusion-frees enter; 4 products are collected and are adopted the fully automatic vacuum packing; 5 product granularities are thin, are evenly distributed the pattern rule.
(4) description of drawings
The present invention is further illustrated below in conjunction with accompanying drawing.
Accompanying drawing is a process flow sheet of the present invention.
(5) embodiment
Accompanying drawing is a kind of specific embodiment of the present invention.This embodiment comprises following characteristics:
One, compressed-air actuated purification:
1 compressed-air actuated purifying treatment: the compression of the compressed machine of air, pressure be 0.6-1.2MPa through oily water separation, secondary filter, lyophilize (dew point reaches-40 degrees centigrade), high-accuracy filtration forms high-purity pressurized gas.Guaranteed not contain any impurity.
Two, the technological process of production:
1, this four procedure of ore dressing-coarse crushing-cleaning-drying is achieved by the purchasing of raw materials.Guaranteed that starting material are the silicon-dioxide powdery of crystal type purity 99.90%-99.99%.
2, comminution by gas stream at first adopts the special high-abrasive material that does not contain any metallic impurity to carry out the coating processing to Jet Mill inwall and inner-walls of duct, and secondly crushing process is totally-enclosed.Guaranteed that the crushing process inclusion-free enters.
3, fine grading carries out totally-enclosed full automatic fine grading packing by the fine grading machine to the material after processing.Guaranteed that classification wrapping process inclusion-free enters.
By above 2 points, finally make the final product high pure and ultra-fine: purity height (silicon content 99.900%-99.999%), fine size (5000-10000 order), and be evenly distributed, the pattern rule.
Three, pulverizing, grading technology flow process and principle:
1, clean fresh air compresses through air compressor, forms high pressure gas (0.6-1.2MPa); Enter gas-holder through stainless steel pipes and carry out oily water separation; Enter strainer and carry out secondary filter, form more purified high pressure gas; Then enter freeze drier and carry out lyophilize (negative 40 degrees centigrade of dew point); Enter strainer again and carry out high-accuracy filtration, finally form the low temperature high-purity pressure gas.
2, high pressure gas enter Jet Mill, spray through special nozzle to form the ultra-high speed air-flow, drive through adding the material high-speed motion that feed bin enters, and the material of high-speed motion runs foul of each other, and reaches the purpose of pulverizing.Particle after the pulverizing arrives grading room with upstream, grading machine runs up, underproof macrobead is thrown to outer wall and drops to crushiing chamber and pulverize once more, and qualified particle enters separation that cyclopneumatic separator carries out different fineness and divides grade packagedly, finally forms the final product of different size.Tail gas filters through cloth envelop collector, and remaining grit is caught by cloth bag and collected packing formation final product, and clean tail gas is discharged through induced draft fan.The raw material input is according to product requirement 5KG-100KG per hour, and output and input keep balance.
Claims (1)
1. the production method of a high purity ultra-fine silicon dioxide is characterized in that: the high pressure gas after the processing arrive the comminution by gas stream machine nozzle with 0.6MPa-1.2MPa pressure through stainless steel pipes, after the comminution by gas stream machine nozzle is handled, form 1-3 times of high-speed gas of supersonic speed; Simultaneously, from the gas volume instantaneous expansion of nozzle ejection, pressure is reduced to normal pressure, and temperature moment is reduced to below 20 degrees centigrade, drives the starting material high-speed motion and the collision mutually that are entered by charging opening, reaches the pulverizing purpose; Starting material are the silicon-dioxide powdery of crystal type purity 99.90%-99.99%, the finished product purity 99.990%-99.999%, granularity 5000-10000 order; The treating processes of described high pressure gas is as follows: clean fresh air compresses through air compressor, forms the 0.6-1.2MPa high pressure gas; Enter gas-holder through stainless steel pipes and carry out oily water separation; Enter strainer and carry out secondary filter, form more purified high pressure gas; The freeze drier that then enters negative 40 degrees centigrade of dew point carries out lyophilize; Enter strainer again and carry out high-accuracy filtration, finally form the low temperature high-purity pressure gas;
At first adopt high-abrasive material to carry out the coating processing to Jet Mill inwall and inner-walls of duct in the comminution by gas stream process, inside coating is handled main component: polyurethane high molecule material and high-purity silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100139748A CN101219791B (en) | 2008-01-29 | 2008-01-29 | Method for producing high purity ultra-fine silicon dioxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100139748A CN101219791B (en) | 2008-01-29 | 2008-01-29 | Method for producing high purity ultra-fine silicon dioxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101219791A CN101219791A (en) | 2008-07-16 |
| CN101219791B true CN101219791B (en) | 2010-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008100139748A Expired - Fee Related CN101219791B (en) | 2008-01-29 | 2008-01-29 | Method for producing high purity ultra-fine silicon dioxide |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104909369A (en) * | 2015-05-28 | 2015-09-16 | 济南骄泰信息技术有限公司 | Ultra-fine metal silicon powder production method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1186772A (en) * | 1996-12-30 | 1998-07-08 | 徐梦雷 | High purity SiO2 superfine powder and its producing method |
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2008
- 2008-01-29 CN CN2008100139748A patent/CN101219791B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1186772A (en) * | 1996-12-30 | 1998-07-08 | 徐梦雷 | High purity SiO2 superfine powder and its producing method |
Non-Patent Citations (4)
| Title |
|---|
| 孙康宁等.现代工程材料成形与制造工艺基础上册 1.机械工业出版社,2001,183. |
| 孙康宁等.现代工程材料成形与制造工艺基础上册 1.机械工业出版社,2001,183. * |
| 言仿雷.超微气流粉碎技术.材料科学与工程18 4.2000,18(4),145-149. |
| 言仿雷.超微气流粉碎技术.材料科学与工程18 4.2000,18(4),145-149. * |
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| CN101219791A (en) | 2008-07-16 |
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Owner name: QIU XIANGMING Free format text: FORMER OWNER: ZENCHENG JINWEI POWDER TECHNOLOGY CO., LTD. Effective date: 20080829 |
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Owner name: SHANDONG HUAHAO SILICON TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: QIU XIANGMING Effective date: 20100819 |
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Inventor after: Li Qingao Inventor after: Zhao Pishan Inventor after: Qiu Xiangming Inventor before: Qiu Xiangming |
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Free format text: CORRECT: INVENTOR; FROM: QIU XIANGMING TO: LI QINGAO ZHAO PISHAN QIU XIANGMING Free format text: CORRECT: ADDRESS; FROM: 271600 NO. 20, FEICHENGTAI WEST STREET, TAIAN CITY, SHANDONG PROVINCE TO: 274600 NO. 14, RENMIN WEST ROAD, JUANCHENG COUNTY, HEZE CITY, SHANDONG PROVINCE |
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Effective date of registration: 20100819 Address after: 274600 No. 14 Renmin West Road, Juancheng County, Shandong, Heze Applicant after: Shandong Huahao Silicon Technology Co., Ltd. Address before: 271600 Shandong city of Tai'an province Feicheng West Street No. 20 Applicant before: Qiu Xiangming |
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