CN101216680A - Method for measuring Cube-Prism non-orthogonality angle and scale factor correct value - Google Patents
Method for measuring Cube-Prism non-orthogonality angle and scale factor correct value Download PDFInfo
- Publication number
- CN101216680A CN101216680A CNA2007101735842A CN200710173584A CN101216680A CN 101216680 A CN101216680 A CN 101216680A CN A2007101735842 A CNA2007101735842 A CN A2007101735842A CN 200710173584 A CN200710173584 A CN 200710173584A CN 101216680 A CN101216680 A CN 101216680A
- Authority
- CN
- China
- Prior art keywords
- angle
- nonorthogonality
- scaling factor
- correction value
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
A method for measuring corrected values of non-rothogonality angles and scaling factors of a square mirror comprises the following steps: placing and exposing a marking image (A) on a mask onto a gummed blank silicon wafer via a photoetching system according to a designated graph, and taking off the wafer when exposure is completed; putting up the wafer after rotating the silicon wafer by a certain angle, placing and exposing a marking image (B) on the mask onto the silicon wafer according to the same graph, wherein compared to the first layer, the exposure marking position is deviant; developing again when the exposure is completed; putting up the wafer again without rotating the silicon wafer, and reading all the marking positions after aligning the marks on the silicon wafer via an off-axis alignment system of a photographic machine; and calculating the non-rothogonality angles and the scaling factors of a coordinate system of a working piece table according to the measured marking positions. The measurement method is an absolute measurement method, and can be applied in different photoetching systems.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to the method for a kind of side of measurement mirror nonorthogonality angle and scaling factor correction value.
Background technology
Because there are certain mechanical deflection in X side's mirror of work stage and Y side's mirror when installing, make that X side's mirror is not absolute vertical with Y side's mirror in the actual litho machine system, there is nonorthogonality in the worktable coordinate system (coordinate system y axle is parallel to X side's mirror) that causes like this setting up.When work stage during along X, Y-axis scan exposure, the distortion distortion will appear in the gained figure.In addition since work stage X and Y direction interferometer do not match, with the scaling difference that causes between X-axis and the Y-axis coordinate.
The definite work stage nonorthogonality angle commonly used now and the method for diaxon scaling corrected value are, utilize an orthogonal reference silicon chip to carry out relative measurement, the orthogonal reference silicon chip is made up of a series of alignment marks, the X of delegation forms point-device an angle of 90 degrees to a mark and a row Y to mark, as shown in Figure 1.During measurement, revolve with reference to silicon chip and to carry out last slice again after turning 90 degrees, by reading nonorthogonality corrected value that alignment mark position on the silicon chip can calculate worktable coordinate system and y axle scaling corrected value with respect to the x axle.This measuring method also has some defectives of self, as make the orthogonal reference silicon chip and have certain difficulty, and the litho machine system silicon sheet specification and the orthogonal reference silicon chip that require to be used to proofread and correct have consistance, make the relative measurement method have certain limitation in the use of litho machine system.
Summary of the invention
The present invention has circumscribed shortcoming for solving current measuring methods on litho machine uses, the method for a kind of side of measurement mirror nonorthogonality angle and scaling factor correction value is provided.
The method of a kind of side of measurement mirror nonorthogonality angle and scaling factor correction value comprises,
(1), by the litho machine system, with the marker graphic A on the mask, be exposed on the blank silicon chip of gluing according to the graphical distribution of appointment, after exposure is finished, following sheet;
(2), go up again after silicon chip rotated a certain angle slice, with the marker graphic B on the mask,, be exposed to once more on the silicon chip according to identical graphical distribution, the exposure mark position has skew with respect to ground floor;
(3), the exposure finish after, develop;
(4), once more go up slice, but do not rotate, through the photo-etching machine off-axis alignment system is remembered row into and aimed to the silicon chip subscript after, read all mark positions;
(5), calculate the worktable coordinate system nonorthogonality angle and the scaling factor according to the mark position that measures:
y
m-y
n＝b
0+b
1*y
n-b
2*x
n (1)
x
m-x
n＝a
0+a
1*x
n+a
2*y
n (2)
θ＝(b
2-a
2)/2 (3)
y/x＝1-(b
1-a
1)/2 (4)
(x wherein
n, y
n) be the measuring position of ground floor exposure mark A, (x
m, y
m) deduct the off-set value of the second layer for the measuring position of second layer exposure mark B with respect to ground floor; a
0, a
1, a
2, b
0, b
1, b
2Be fitting coefficient; θ is a nonorthogonality angularity correction value, and y/x is the scale factor corrected value of worktable coordinate system Y-axis with respect to X-axis.
Marker graphic A and mask graph B are same kind off-axis alignment mark on the wherein said mask.
Wherein the angle of silicon chip rotation is 90 degree, 180 degree, 270 degree in the step (2).
Wherein said graphical distribution comprises 3 above radix horizontal line and 3 above radix vertical row, and wherein intersection point place mark is positioned at the silicon chip center, and each on the row and column is labeled as the projection image of marker graphic A on the mask or B; Described graphical distribution comprises 3 horizontal line and 3 vertical row.
Wherein said marker graphic A and B also can be overlay mark; Adopt alignment error measure instrument to measure the side-play amount of exposure mark position.
Wherein said marker graphic B is consistent with the angle of described silicon chip rotation with respect to the angle of marker graphic A rotation; Described marker graphic B is 90 degree or 180 degree or 270 degree with respect to the angle of marker graphic A rotation.
The litho machine system that method adopted of a kind of side of measurement mirror nonorthogonality angle and scaling factor correction value comprises, illuminator is positioned at the mask of the below of illuminator; The mask platform of carrying mask is positioned at the optical system of burying the platform below, is positioned at the silicon chip of optical system below; The work stage of carrying silicon chip; Be positioned at the alignment system of work stage one side; The X that is positioned at the other side of work stage to interferometer and Y to interferometer.
The present invention can be applicable to different litho machine systems owing to adopted the absolute method of measurement side of measurement mirror nonorthogonality angle and scaling factor correction value, and its indicia designs is simple, convenient.
Description of drawings
Fig. 1 is the synoptic diagram with reference to silicon chip;
Fig. 2 is the litho machine system schematic;
Fig. 3 is that the exposure figure of the mark A that buries and B distributes.
Embodiment
Below in conjunction with specific embodiment the method for a kind of side of measurement of the present invention mirror nonorthogonality angle and scaling factor correction value is done detailed description.
Exposure wherein of the present invention and as shown in Figure 2 to the litho machine system of locating tab assembly, comprise: illuminator 1, the mask platform 3 of carrying mask 2, the optical system 4 that is used for the mask imaging, the work stage 7 of carrying silicon chip 6, the alignment system 5 that is used for off-axis alignment, the X of monitoring work stage movement position to interferometer 8 and Y to interferometer 9.
Use among the present invention that two alignment marks are used for exposure on the mask, mark A and mark B, mark A and mark B are same kind off-axis alignment mark, and the concrete steps of its side's of measurement mirror nonorthogonality angle and scaling factor correction value are:
(1), by the litho machine system, with the marker graphic A on the mask, according to certain graphical distribution multiexposure, multiple exposure to the ad-hoc location of the blank silicon chip of gluing, exposure image distributes as shown in Figure 3, comprise 3 horizontal line and 3 vertical row, wherein intersection point place mark 10 is arranged in silicon chip center (each little dark square of figure is expressive notation A all), after exposure is finished, and following sheet;
(2), be rotated counterclockwise and go up again behind silicon chip 90 degree slice, with the marker graphic B on the mask, according to identical graphical distribution, be exposed to once more on the silicon chip that (marker graphic B is consistent with the angle that described silicon chip rotates with respect to the angle of marker graphic A rotation, also be 90 degree), the exposure mark position has certain skew (this off-set value is predefined fixed value) with respect to the mark A of ground floor, exposure image distributes identical with ground floor, (mark B also is one by one little dark square as shown in Figure 3, and certain skew is arranged with mark A, do not draw among Fig. 3), also comprise 3 row horizontal line and 3 vertical row;
(3) after exposure is finished, develop;
(4) go up once more slice, but do not rotate, through the photo-etching machine off-axis alignment system is remembered the row aligning into to the silicon chip subscript after, after markers align, read current work stage position by interferometer 8 in the litho machine system and interferometer 9, be converted into the position that is marked under the worktable coordinate system then;
(5) calculate the worktable coordinate system nonorthogonality angle and the scaling factor according to the mark position that measures;
Its computing method are, at first utilize equation (1) and (2) to carry out least square fitting, obtain fitting coefficient; Utilize expression formula (3) and (4) to calculate nonorthogonality angularity correction value and Y-axis scale factor corrected value then with respect to X-axis.
y
m-y
n＝b
0+b
1*y
n-b
2*x
n； (1)
x
m-x
n＝a
0+a
1*x
n+a
2*y
n； (2)
θ＝(b
2-a
2)/2； (3)
y/x＝1-(b
1-a
1)/2； (4)
(x wherein
n, y
n) be ground floor each mark measuring position of exposing, (x
m, y
m) deduct the off-set value gained of the second layer for the second layer each mark measuring position of exposing with respect to ground floor; a
0, a
1, a
2, b
0, b
1, b
2Be fitting coefficient; θ is a nonorthogonality angularity correction value, and y/x is the scale factor corrected value of worktable coordinate system Y-axis with respect to X-axis.
The present invention expose used mark A and mark B also can be special-purpose overlay mark, and corresponding measuring process uses the Archer 10 alignment error measure instruments of KLA-Tencor company to detect the side-play amount of two-layer exposure mark.
In the present embodiment, if mark A and mark B that exposure is used are overlay mark, after exposure finishes and develops, measure the side-play amount of two-layer exposure mark by the Archer 10 alignment error measure instruments of KLA-Tencor company, deduct the off-set value of the second layer, promptly obtain corresponding y with respect to ground floor
m-y
n, x
m-x
n, if (x
n, y
n) get the exposure nominal position, can obtain nonorthogonality angularity correction value and Y-axis scale factor corrected value by formula (1), (2), (3) and (4) equally with respect to X-axis.
The present invention is by the two-layer mark of exposure on the silicon chip of blank, by measuring system two-layer mark is measured, obtain the nonorthogonality corrected value of worktable coordinate system and y axle with respect to the scaling corrected value of x axle according to the measurement markers position calculation that obtains, be a kind of absolute method of measurement.
The present invention is suitable for the litho machine system with off-axis alignment system, exposure process of the present invention and measuring process can all be finished in the litho machine system, also can finish in litho machine system and special-purpose alignment error measuring system respectively, make measuring process be independent of exposure process.
Exposure scale used in the present invention is designated as general off-axis alignment mark or overlay mark, and indicia designs is simple, convenient.
Claims (11)
1. the method for the side's of measurement mirror nonorthogonality angle and scaling factor correction value is characterized in that, described method comprises,
(1), by the litho machine system, with the marker graphic A on the mask, be exposed on the blank silicon chip of gluing according to the graphical distribution of appointment, after exposure is finished, following sheet;
(2), go up again after silicon chip rotated a certain angle slice, with the marker graphic B on the mask,, be exposed to once more on the silicon chip according to identical graphical distribution, the exposure mark position has skew with respect to ground floor;
(3), the exposure finish after, develop;
(4), once more go up slice, but do not rotate, through the photo-etching machine off-axis alignment system is remembered row into and aimed to the silicon chip subscript after, read all mark positions;
(5), calculate the worktable coordinate system nonorthogonality angle and the scaling factor according to the mark position that measures.
2. the method for a kind of side of measurement mirror nonorthogonality angle as claimed in claim 1 and scaling factor correction value is characterized in that, the computing formula of the described nonorthogonality angle and the scaling factor is,
y
m-y
n＝b
0+b
1*y
n-b
2*x
n (1)
x
m-x
n＝a
0+a
1*x
n+a
2*y
n (2)
θ＝(b
2-a
2)/2 (3)
y/x＝1-(b
1-a
1)/2 (4)
(x wherein
n, y
n) be the measuring position of ground floor exposure mark A, (x
m, y
m) deduct the off-set value of the second layer for the measuring position of second layer exposure mark B with respect to ground floor; a
0, a
1, a
2, b
0, b
1, b
2Be fitting coefficient; θ is a nonorthogonality angularity correction value, and y/x is the scale factor corrected value of worktable coordinate system Y-axis with respect to X-axis.
3. the method for a kind of side of measurement mirror nonorthogonality angle as claimed in claim 1 and scaling factor correction value is characterized in that, marker graphic A and marker graphic B are same kind off-axis alignment mark on the described mask.
4. the method for a kind of side of measurement mirror nonorthogonality angle as claimed in claim 1 and scaling factor correction value, it is characterized in that, described graphical distribution is 3 above radix horizontal line and 3 above radix vertical row, wherein intersection point place mark (10) is positioned at the silicon chip center, and each on the row and column is labeled as the projection image of marker graphic A on the mask or B.
5. the method for a kind of side of measurement mirror nonorthogonality angle as claimed in claim 4 and scaling factor correction value is characterized in that, described graphical distribution is 3 horizontal line and 3 vertical row.
6. the method for a kind of side of measurement mirror nonorthogonality angle as claimed in claim 1 and scaling factor correction value is characterized in that described marker graphic A and B also can be overlay mark.
7. the method for a kind of side of measurement mirror nonorthogonality angle as claimed in claim 6 and scaling factor correction value is characterized in that, adopts alignment error measure instrument to measure the side-play amount of exposure mark position.
8. the method for a kind of side of measurement mirror nonorthogonality angle as claimed in claim 1 and scaling factor correction value is characterized in that, the angle of silicon chip rotation is 90 degree or 180 degree or 270 degree in the described step (2).
9. the method for a kind of side of measurement mirror nonorthogonality angle as claimed in claim 1 and scaling factor correction value is characterized in that, described marker graphic B is consistent with the angle of described silicon chip rotation with respect to the angle of marker graphic A rotation.
10. as the method for claim 1 or 9 described a kind of side of measurement mirror nonorthogonality angles and scaling factor correction value, it is characterized in that described marker graphic B is 90 degree or 180 degree or 270 degree with respect to the angle of marker graphic A rotation.
11. one kind is utilized the litho machine system that is adopted in the method for claim 1 described a kind of side of measurement mirror nonorthogonality angle and scaling factor correction value, it is characterized in that, comprise that illuminator (1) is positioned at the mask (2) of the below of illuminator (1); The mask platform (3) of carrying mask (2) is positioned at the optical system (4) of burying platform (3) below, is positioned at the silicon chip (6) of optical system (4) below; The work stage (7) of carrying silicon chip (6); Be positioned at the alignment system (5) of work stage (7) one sides; The X that is positioned at the other side of work stage (7) to interferometer (8) and Y to interferometer (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101735842A CN100559283C (en) | 2007-12-28 | 2007-12-28 | The method of the side's of measurement mirror nonorthogonality angle and scaling factor correction value |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101735842A CN100559283C (en) | 2007-12-28 | 2007-12-28 | The method of the side's of measurement mirror nonorthogonality angle and scaling factor correction value |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101216680A true CN101216680A (en) | 2008-07-09 |
| CN100559283C CN100559283C (en) | 2009-11-11 |
Family
ID=39623131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101735842A Active CN100559283C (en) | 2007-12-28 | 2007-12-28 | The method of the side's of measurement mirror nonorthogonality angle and scaling factor correction value |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100559283C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102841515A (en) * | 2011-06-22 | 2012-12-26 | 上海微电子装备有限公司 | Alignment method and apparatus based on multi-cycle marker |
| CN103995432A (en) * | 2012-12-03 | 2014-08-20 | 深圳清溢光电股份有限公司 | Method and device for lowering stripes of photomask plate |
| CN104736962A (en) * | 2012-09-05 | 2015-06-24 | 科磊股份有限公司 | Method for estimating and correcting misregistration target inaccuracy |
| CN105629678A (en) * | 2016-01-25 | 2016-06-01 | 苏州苏大维格光电科技股份有限公司 | Orthogonality determination method for direct writing system motion platform |
| CN107993958A (en) * | 2017-12-06 | 2018-05-04 | 江苏维普光电科技有限公司 | Orthogonality compensation method and compensation system in semiconductor defect detection/photoetching |
| CN111290221A (en) * | 2015-02-23 | 2020-06-16 | 株式会社尼康 | Measuring and exposure device and method, photoetching system and element manufacturing method |
| US11385557B2 (en) | 2015-02-23 | 2022-07-12 | Nikon Corporation | Measurement device, lithography system and exposure apparatus, and device manufacturing method |
| US11442371B2 (en) | 2015-02-23 | 2022-09-13 | Nikon Corporation | Substrate processing system and substrate processing method, and device manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100504615C (en) * | 2006-07-21 | 2009-06-24 | 上海微电子装备有限公司 | Method for measuring double-laser interferometer intersection angle non-orthogonality |
-
2007
- 2007-12-28 CN CNB2007101735842A patent/CN100559283C/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102841515A (en) * | 2011-06-22 | 2012-12-26 | 上海微电子装备有限公司 | Alignment method and apparatus based on multi-cycle marker |
| CN104736962A (en) * | 2012-09-05 | 2015-06-24 | 科磊股份有限公司 | Method for estimating and correcting misregistration target inaccuracy |
| CN104736962B (en) * | 2012-09-05 | 2017-10-03 | 科磊股份有限公司 | For estimation and the method for correcting offset target inaccuracy |
| CN103995432A (en) * | 2012-12-03 | 2014-08-20 | 深圳清溢光电股份有限公司 | Method and device for lowering stripes of photomask plate |
| CN103995432B (en) * | 2012-12-03 | 2017-09-08 | 深圳清溢光电股份有限公司 | Reduce the method and device of optical mask plate striped |
| CN111290221A (en) * | 2015-02-23 | 2020-06-16 | 株式会社尼康 | Measuring and exposure device and method, photoetching system and element manufacturing method |
| US11385557B2 (en) | 2015-02-23 | 2022-07-12 | Nikon Corporation | Measurement device, lithography system and exposure apparatus, and device manufacturing method |
| US11442371B2 (en) | 2015-02-23 | 2022-09-13 | Nikon Corporation | Substrate processing system and substrate processing method, and device manufacturing method |
| CN105629678A (en) * | 2016-01-25 | 2016-06-01 | 苏州苏大维格光电科技股份有限公司 | Orthogonality determination method for direct writing system motion platform |
| CN105629678B (en) * | 2016-01-25 | 2017-09-19 | 苏州苏大维格光电科技股份有限公司 | A kind of orthogonality assay method of straight-writing system motion platform |
| CN107993958A (en) * | 2017-12-06 | 2018-05-04 | 江苏维普光电科技有限公司 | Orthogonality compensation method and compensation system in semiconductor defect detection/photoetching |
| CN107993958B (en) * | 2017-12-06 | 2021-04-02 | 江苏维普光电科技有限公司 | Orthogonality compensation method and compensation system in semiconductor defect detection/photoetching |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100559283C (en) | 2009-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100559283C (en) | The method of the side's of measurement mirror nonorthogonality angle and scaling factor correction value | |
| CN104199257B (en) | The measurement of a kind of precisely locating platform absolute fix precision and compensation method | |
| CN101526753B (en) | Parameter measuring method of worktable coordinate system | |
| CN101398630B (en) | Aligning and stacking marker, mask structure and using method thereof | |
| EP0895279A4 (en) | Manufacture of semiconductor device | |
| CN101261451B (en) | On-site measurement method Photo-etching machine image-forming quality and workpiece station positioning accuracy | |
| CN101344728B (en) | On-line measurement apparatus and method for wave aberration of photo-etching machine projection objective | |
| US7826068B2 (en) | Method for correcting measured values resulting from the bending of a substrate | |
| CN107367911A (en) | Alignment methods and to Barebone | |
| CN101989047B (en) | Method for detecting pattern topography of maskplate by dual exposure method | |
| CN106933024B (en) | Photoetching system capable of detecting mask curvature and detection method | |
| CN105629678A (en) | Orthogonality determination method for direct writing system motion platform | |
| CN102466977B (en) | Mark structure used for measuring distortion of projection object lens and its method | |
| JP2007504664A (en) | Structure for Pattern Recognition and Method for X Initiative Layout Design | |
| CN101387833A (en) | Projection objective magnification error and distortion detection device and method | |
| US6239858B1 (en) | Exposure method, exposure apparatus and semiconductor device manufactured by using the exposure apparatus | |
| CN106814557A (en) | It is a kind of to Barebone and alignment methods | |
| CN101241312A (en) | Photo-etching machine image-forming quality on-site measurement method | |
| CN101169594A (en) | Photo-etching machine imaging quality measuring method | |
| US20130044320A1 (en) | Self-Calibrated Alignment and Overlay Target and Measurement | |
| US7584072B2 (en) | Method for determining correction values for the measured values of positions of structures on a substrate | |
| CN1963676A (en) | Testing tag and method for testing imaging quality of photoeching machine using the same | |
| CN105204299A (en) | Graphic structure for aligning precise measurement | |
| CN108735645A (en) | Wafer alignment method and wafer alignment device | |
| JP7390104B2 (en) | Microlithographic masks, methods for determining image edge positions of structures of such masks, and systems for implementing such methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525 Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |