CN101211898A - Packaging structure for electrostatic protection, electromagnetic isolation and antioxidation and method of manufacture - Google Patents
Packaging structure for electrostatic protection, electromagnetic isolation and antioxidation and method of manufacture Download PDFInfo
- Publication number
- CN101211898A CN101211898A CNA2006101675974A CN200610167597A CN101211898A CN 101211898 A CN101211898 A CN 101211898A CN A2006101675974 A CNA2006101675974 A CN A2006101675974A CN 200610167597 A CN200610167597 A CN 200610167597A CN 101211898 A CN101211898 A CN 101211898A
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- conductive
- encapsulating structure
- junction point
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- coating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention relates to an encapsulation structure, which comprises a basement, at least a part which is arranged on the basement, a conductive contact which is arranged near the edge of the basement, a covering layer which is arranged upon the basement to cover parts and expose the contact part of the conductive contact, and a conductive layer which is arranged on the covering layer and is electrically coupled with the contact part of the conductive contact. The invention also provides a method for manufacturing the encapsulation structure, which comprises the following processes: a basement is provided and divided into a plurality of unit regional range according to a cutting channel, and at least a part is arranged in each unit; the conductive contact is arranged in the cutting channel; the covering layer is arranged on the surface of the basement to cover parts and the conductive contact; a groove is formed by the cutting channel to expose the conductive contact; and the conductive layer is arranged inside of the groove on the covering layer so that the conductive layer is electrically coupled with the exposed conductive contact. The conductive layer can be formed by metal, conductive ink, plastic cement and powdered carbon and other conductive materials for realizing electromagnetic shielding, oxidation resistance and direct electrostatic protection.
Description
Technical field
The small structure packing technique of the relevant electronics of the present invention, particularly relevant a kind of have electrostatic defending, electromagnetic isolation and oxidation resistant encapsulating structure and manufacture method thereof.
Background technology
Modular integrated circuit encapsulates the mode of SIP (System in Package) or integrated circuit (IntegratedCircuits) now, no matter be one chip or the module (module) of integrating the multicore sheet, on the whole be to adopt mold (molding component) mode.Along with the modular integrated circuit development of technology, modular integrated circuit is microminiaturization day by day, promptly there is increasing technical problem also must overcome, and the major technology problem has three: one, the problem of electrostatic defending, because the downsizing trend of electronic component is bright and clear gradually, so the prevention of the static that element bore injury also will be strengthened; The 2nd, electromagnetic interference is because the downsizing of element so electromagnetic interference also will be handled especially, just can prevent electromagnetic wave signal interference; The 3rd, the problem of package land oxidation, owing to dwindling of element, the I/O contact problem of oxidation of element also can cause the volume production yield to promote.
Light just solves electromagnetic interference, and prior art is on the set circuit board of modular integrated circuit, utilizes the metal spare part that modular integrated circuit is coated in it, obtains the effect of electromagnetic isolation in the mode of covering (shielding).But metal cover is to be used to coat modular integrated circuit, and area must be bigger than modular integrated circuit; In addition, metal cover need be made separately by the size of modular integrated circuit, so production cost is also high.Moreover metal cover only solves the problem of electromagnetic interference, but can't electrostatic defending and the problem of contact oxidation.
Summary of the invention
Therefore, a purpose of the present invention is to provide a kind of have electrostatic defending, electromagnetic isolation and oxidation resistant small encapsulating structure and manufacture method thereof.
For achieving the above object, the present invention can finish by a kind of encapsulating structure is provided.This encapsulating structure comprises: a substrate; At least one part is arranged in the substrate; One conductive junction point is provided with and is adjacent to the basal edge place; One coating layer is arranged at substrate top cap piece, and exposes the contact site of conductive junction point; And a conductive layer is arranged on the coating layer, and is electric property coupling with the contact site of conductive junction point.The conductive layer on surface and the conductive junction point that exposes do not need to reach electric property coupling sometimes and can reach same effect yet.And employed conductive layer can be that materials such as metal, electrically conductive ink, conductive plastic, conductive carbon powder constitute.
The present invention also can provide a kind of manufacture method of encapsulating structure to finish, and this manufacture method comprises the following steps: to provide a substrate, divides into a plurality of unit areas scope by Cutting Road, is provided with at least one part in each unit area scope; Conductive junction point is set on Cutting Road; At substrate surface one coating layer is set, and cap piece and conductive junction point; Form groove according to Cutting Road, in order to expose conductive junction point; And, on coating layer with in the groove, a conductive layer is set, make conductive layer and the conductive junction point that exposes be electric property coupling.The conductive layer on surface and the conductive junction point that exposes do not need to reach electric property coupling sometimes and can reach same effect yet.
Description of drawings
Fig. 1 is the top view that shows encapsulating structure one preferred embodiment according to the present invention;
Fig. 2 is the profile that the II-II line of displayed map 1 is cut; And
Fig. 3 to Fig. 7 is the manufacture method section flow chart that shows the encapsulating structure according to the present invention.
Embodiment
Hereinafter will be an embodiment with the module integrated circuit packaging structure of modular form, for the one chip module integrated circuit packaging structure, or the encapsulation of multicore sheet also can in like manner be suitable for.
Please refer to Fig. 1, be depicted as the top view of one encapsulating structure 1 according to the present invention; And promptly be shown in Fig. 2 along the profile that the II-II line of Fig. 1 is cut.Illustrated in figures 1 and 2, label 10 is represented a substrate, and this substrate 10 can be BT, FR4,, substrate material such as LTcc, FR5 or metal constitutes, thickness is about 0.1mm～1mm or thicker.Label 11A, 11B, 11C represent part, can be modular integrated circuit chip, chip-resistance or chip capacity, and these parts 11A, 11B, 11C are fixed in the substrate 10.Label 12 is represented conductive junction point (conductive pad), is arranged at the fringe region of substrate 10, normally is connected to earthing potential.Label 13 is represented coating layer (molding layer), can utilize the coating material of modular integrated circuit or other insulation material constitutes, be overlying on all surfaces of substrate 10, coverings such as part 11A, 11B, 11C are got up, but need the part of conductive junction point 12 is exposed, it is a contact site 15.Label 14 is represented conductive layer (conductive layer), is covered in coating layer 13 surfaces and side; Preferable, conductive layer 14 needs to be electric connection with the contact site 15 of conductive junction point 12; This conductive layer 14 is made of materials such as conductive plastic, electrically conductive ink, conductive carbon powder or metals; Conductive plastic can be polyaniline (polyaniline) (PAn), polypyrrole (polypyrrole) (PPy), p-poly-phenyl (poly-para-phenylene) (PPP), polythiophene (polythiophene) (PT) etc.Preferable, if conductive layer 14 adopts materials such as electrically conductive inks, conductive plastic, conductive carbon powder, with coating layer 13 tacks be good than metal material, reliability is better; In addition, can to provide than metal be good non-oxidizability for electrically conductive ink, conductive plastic, conductive carbon powder etc.
According to the present invention, earlier be provided with conductive junction point 12 in fixing substrate 10 edges of electronic component, follow-uply be covered with coating layer 13, expose the part of conductive junction point 12 when then doing cutting again and do contact site 15, then conductive layer 14 is formed at all surfaces of coating layer 13, and electrically contacts for 15 one-tenth with the contact site of conductive junction point 12.Because conductive junction point 12 is to be connected in earthing potential, so static can be derived, obtains the effect of electrostatic defending; In addition, conductive layer 14 is coated whole coating layers 13, forms the ground plane of avoiding electromagnetic interference, can obtain the effect of electromagnetic isolation; Again again, utilize the formation of conductive layer 14 electrochemical oxidations, can make other parts on the surface of contacting metal be difficult for oxidation, obtain oxidation resistant effect.
Moreover conductive junction point 12 shown in Figure 1 is to belong to selectivity to form important document, also can be omitted.
Please refer to Fig. 3 to Fig. 7, be depicted as the manufacture method section flow chart of encapsulating structure according to the present invention.As shown in Figure 3, in a substrate 30, be to divide into a plurality of unit area 34A, 34B, 34C, 34D etc. by Cutting Road (scribe line) 32, this substrate 30 can be that substrate material such as BT, FR4, LTcc, FR5 constitute, thickness is about 0.1mm～1mm.In each unit area scope 34A-34D, be respectively arranged with part, such as: be provided with part 36A in the scope 34A of unit area, be provided with part 36B in the scope 34B of unit area, be provided with part 36C in the scope 34C of unit area, be provided with part 36D in the scope 34D of unit area, and each part is fixedly arranged on the mode of substrate 30, can welding, surface mount or be plugged in the modes such as socket that are fixedly arranged on substrate and form.Among Fig. 3, also have some conductive junction points 38 to be arranged in the substrate, be positioned at Cutting Road 32 places, this conductive junction point 38 can be that materials such as metal, conductive materials constitute, and can be various shapes such as strip or sheet.
Then, on whole substrate 30 surfaces, form a coating layer 40,, promptly as shown in Figure 4.And this forms the step of coating layer 40, and material covering substrate 30 surfaces of can mold mode (molding) will insulate promptly cover conductive junction point 38, part 36A-36D or the like simultaneously, first as the usefulness that insulate between each part, moreover the surface is given planarization.This coating layer 40 can be constituted by coating compound materials such as (MoldingCompound), and thickness is approximately between 0.2～2.0mm.
Then, as shown in Figure 5,, coating layer 40 is cut according to the position of each Cutting Road 32, so as to coating layer 40 according to unit area scope 34A-34D, divide into coating layer 40A-40D.Along in the process of Cutting Road 32 cuttings, not only coating layer 40 is done cutting, also the conductive junction point 38 that is positioned at Cutting Road 32 tops is cut, such as: the conductive junction point 38 between unit area scope 34A and 34B is through cutting conductive junction point 38A and 38B, conductive junction point 38 between unit area scope 34B and 34C is through cutting conductive junction point 38C and 38C, and the conductive junction point 38 between unit area scope 34C and 34D is through cutting conductive junction point 38C and 38D.Through after the cutting process, the part that can expose conductive junction point 38 by the groove 42,44,46 that cutting is produced, such as: can expose conductive junction point 38A and 38B via groove 42, can expose conductive junction point 38B and 38C, can expose conductive junction point 38C and 38D or the like via groove 46 via groove 44.
Please refer to Fig. 6 again, form upper surface and side surface that a conductive layer 48 is covered in coating layer 40A-40D, and be filled in the groove 42,44,46.Through this, conductive layer 48 can be electric property coupling with the conductive junction point 38 that exposes, 38A, 38B, 38C, 38D, 38 etc.This conductive layer 14 is made of materials such as conductive plastic, electrically conductive ink, conductive carbon powder or metals; Conductive plastic can be polyaniline (polyaniline) (PAn), polypyrrole (polypyrrole) (PPy), p-poly-phenyl (poly-para-phenylene) (PPP), polythiophene (polythiophene) (PT) etc., and can spraying plating (spraying), sputter (sputtering), evaporation (evaporation), deposition (deposition), coating (coating) or printing modes such as (printing) form.Then, carry out cutting process according to the position of each Cutting Road 32, each unit area scope 34A-34D is given cutting and separating becomes independently encapsulating structure, please refer to Fig. 7, promptly is the encapsulating structure of unit area scope 34B.
Therefore, as shown in Figure 7, the encapsulating structure of method gained constructed in accordance, be to be provided with conductive junction point 38B in fixing substrate 30 edges of electronic component, the follow-up part of exposing conductive junction point 38B when being covered with coating layer 40B is done contact site 50, then conductive layer 48 is covered in the surface of coating layer 40B, and electrically contacts for 50 one-tenth with the contact site of conductive junction point 38B.Because conductive junction point 38B is connected in earthing potential,, obtain the effect of electrostatic defending so static can be derived; Conductive layer 48 is coated whole coating layer 40C again, forms the ground plane of avoiding electromagnetic interference, can obtain the effect of electromagnetic isolation; Again again, utilize the formation of conductive layer 48 electrochemical oxidations, can make the surface portion of contacting metal be difficult for oxidation, obtain oxidation resistant effect.
In addition, conductive junction point 38B shown in Figure 7 belongs to selectivity to form important document, also can be omitted.In view of the above, among Fig. 3 to Fig. 7,, can be omitted about the formation step of conductive junction point 38,38A, 38B, 38C, 38D etc.
Claims (18)
1. encapsulating structure comprises:
One substrate;
At least one part is arranged in the described substrate;
One conductive junction point is provided with and is adjacent to described basal edge place;
One coating layer is arranged at described substrate top covering described part, and exposes a contact site of described conductive junction point; And
One conductive layer is arranged on the described coating layer.
2. encapsulating structure as claimed in claim 1 is characterized in that the material of described conductive layer is to be selected from the group that is made of conductive plastic, electrically conductive ink, conductive carbon powder and metal.
3. encapsulating structure as claimed in claim 2 is characterized in that, described conductive plastic is to be selected from the group that is made up of polyaniline, polypyrrole, p-poly-phenyl and polythiophene.
4. the described encapsulating structure of claim 1 is characterized in that, described conductive layer is that the described contact site with described conductive junction point is electric property coupling.
5. the manufacture method of an encapsulating structure comprises the following steps:
One substrate is provided, divides into a plurality of unit areas scope, be provided with at least one part in each described unit area scope by Cutting Road;
One conductive junction point is set on described Cutting Road;
At described substrate surface one coating layer is set, and covers described part and described conductive junction point;
Define described coating layer according to described Cutting Road and form groove, in order to expose described conductive junction point;
On described coating layer with in the described groove, a conductive layer is set, makes described conductive layer and the described conductive junction point that exposes be electric property coupling.
6. the manufacture method of encapsulating structure as claimed in claim 5 is characterized in that also comprising: according to described Cutting Road, distinguish a plurality of encapsulating structures.
7. the manufacture method of the described encapsulating structure of claim 5 is characterized in that, the material of described conductive layer is to be selected from the group that is made of conductive plastic, electrically conductive ink, conductive carbon powder and metal.
8. encapsulating structure as claimed in claim 7 is characterized in that, described conductive plastic is to be selected from the group that is made up of polyaniline, polypyrrole, p-poly-phenyl and polythiophene.
9. the manufacture method of the described encapsulating structure of claim 5 is characterized in that, described conductive layer is that the above-mentioned contact site with described conductive junction point is electric property coupling.
10. the manufacture method of the described encapsulating structure of claim 5, it is characterized in that being provided with described conductive layer is to form with one of spraying plating, sputter, evaporation, deposition, coating and mode of printing.
11. an encapsulating structure comprises:
One substrate;
At least one part is arranged in the described substrate;
One coating layer is arranged at described substrate top to cover described part; And
One conductive layer is arranged on the described coating layer.
12. the described encapsulating structure of claim 11 is characterized in that the material of described conductive layer is to be selected from the group that is made of conductive plastic, electrically conductive ink, conductive carbon powder and metal.
13. encapsulating structure as claimed in claim 12 is characterized in that, described conductive plastic is to be selected from the group that is made up of polyaniline, polypyrrole, p-poly-phenyl and polythiophene.
14. the manufacture method of an encapsulating structure comprises the following steps:
One substrate is provided, divides into a plurality of unit areas scope, be provided with at least one part in each described unit area scope by Cutting Road;
At described substrate surface one coating layer is set, and covers described part;
Define described coating layer according to described Cutting Road and form groove; And
On described coating layer with in the described groove, a conductive layer is set.
15. the manufacture method of encapsulating structure as claimed in claim 14 is characterized in that also comprising:, distinguish a plurality of encapsulating structures according to described Cutting Road.
16. the manufacture method of the described encapsulating structure of claim 14 is characterized in that, the material of described conductive layer is to be selected from the group that is made of conductive plastic, electrically conductive ink, conductive carbon powder and metal.
17. encapsulating structure as claimed in claim 16 is characterized in that, described conductive plastic is to be selected from the group that is made up of polyaniline, polypyrrole, p-poly-phenyl and polythiophene.
18. the manufacture method of the described encapsulating structure of claim 14, it is characterized in that being provided with described conductive layer is to form with one of spraying plating, sputter, evaporation, deposition, coating and mode of printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101675974A CN101211898A (en) | 2006-12-25 | 2006-12-25 | Packaging structure for electrostatic protection, electromagnetic isolation and antioxidation and method of manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101675974A CN101211898A (en) | 2006-12-25 | 2006-12-25 | Packaging structure for electrostatic protection, electromagnetic isolation and antioxidation and method of manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101211898A true CN101211898A (en) | 2008-07-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101675974A Pending CN101211898A (en) | 2006-12-25 | 2006-12-25 | Packaging structure for electrostatic protection, electromagnetic isolation and antioxidation and method of manufacture |
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| CN (1) | CN101211898A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101930312A (en) * | 2009-06-23 | 2010-12-29 | 光宝新加坡有限公司 | Sensor unit and manufacture method thereof |
| CN102376628A (en) * | 2010-08-17 | 2012-03-14 | 环旭电子股份有限公司 | Manufacturing method and package structure for system in package module |
| JP2014143250A (en) * | 2013-01-22 | 2014-08-07 | Murata Mfg Co Ltd | Module substrate |
| CN107154363A (en) * | 2016-03-03 | 2017-09-12 | 英飞凌科技股份有限公司 | Manufacture using can plating encapsulation agent packaging body |
| CN107342279A (en) * | 2017-06-08 | 2017-11-10 | 唯捷创芯(天津)电子技术股份有限公司 | A kind of radio-frequency module and its implementation of anti-electromagnetic interference |
-
2006
- 2006-12-25 CN CNA2006101675974A patent/CN101211898A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101930312A (en) * | 2009-06-23 | 2010-12-29 | 光宝新加坡有限公司 | Sensor unit and manufacture method thereof |
| CN101930312B (en) * | 2009-06-23 | 2013-07-03 | 光宝新加坡有限公司 | Sensor unit and manufacture method thereof |
| CN102376628A (en) * | 2010-08-17 | 2012-03-14 | 环旭电子股份有限公司 | Manufacturing method and package structure for system in package module |
| JP2014143250A (en) * | 2013-01-22 | 2014-08-07 | Murata Mfg Co Ltd | Module substrate |
| US9756718B2 (en) | 2013-01-22 | 2017-09-05 | Murata Manufacturing Co., Ltd. | Module board |
| CN107154363A (en) * | 2016-03-03 | 2017-09-12 | 英飞凌科技股份有限公司 | Manufacture using can plating encapsulation agent packaging body |
| US10396007B2 (en) | 2016-03-03 | 2019-08-27 | Infineon Technologies Ag | Semiconductor package with plateable encapsulant and a method for manufacturing the same |
| CN107154363B (en) * | 2016-03-03 | 2020-03-27 | 英飞凌科技股份有限公司 | Making packages using plateable encapsulant |
| US11081417B2 (en) | 2016-03-03 | 2021-08-03 | Infineon Technologies Ag | Manufacturing a package using plateable encapsulant |
| CN107342279A (en) * | 2017-06-08 | 2017-11-10 | 唯捷创芯(天津)电子技术股份有限公司 | A kind of radio-frequency module and its implementation of anti-electromagnetic interference |
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Open date: 20080702 |