CN101211106B - Sensitive light shield - Google Patents
Sensitive light shield Download PDFInfo
- Publication number
- CN101211106B CN101211106B CN2006101480800A CN200610148080A CN101211106B CN 101211106 B CN101211106 B CN 101211106B CN 2006101480800 A CN2006101480800 A CN 2006101480800A CN 200610148080 A CN200610148080 A CN 200610148080A CN 101211106 B CN101211106 B CN 101211106B
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- CN
- China
- Prior art keywords
- light shield
- mask
- sensitive
- quartz layer
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a sensitive mask, which is at least composed of a quartz layer and chromium which is covered on the surface of the quartz layer; wherein the thickness of the quartz layer of the mask is larger than 0.5mm, and the thickness of the chromium is 800A. The light transmission rate of the mask ranges from 40 percent to 60 percent. The pattern type of the mask is formed by lines and spaces which are arranged at intervals. The ratio of the lines and the spaces of the pattern of the mask ranges from 1.0/10.0 to 1.0/5.0. The size of the lines of the pattern of the mask ranges from 1.0um to 1.6um. Compared with the prior art, the sensitive mask of the invention has specific thickness, light transmission rate, pattern type and size of the pattern type; under the same conditions, the sensitive mask can develop a crystal faster than a prior mask, thereby taking remedial measures in the follow-up manufacturing process more earlily.
Description
Technical field
The present invention relates to light shield, specifically, relate to a kind of sensitive light shield.
Background technology
In the exposure process, the quality influence of light shield in the manufacturing process of light shield, can relate to chemicals such as sulfuric acid, nitric acid to the quality that whole figure is shaped usually, because the existence of these chemicals can be left over some tiny atoms in the light shield.The light shield that tiny atom arranged when hiding is after the process of exposure is subjected to illumination, and these tiny atoms can form some crystalline solid with airborne ions binding, and these crystalline solid can cause on the wafer after the exposure and bad point occur.
The manufacturing process of light shield can not avoid producing tiny atom at present, if but more early find just to adopt remedial measures the light shield that there is tiny atom in these in successive process.Yet prior art can not find to exist the light shield of tiny atom very in time, thereby causes successive process to have potential risks.
Summary of the invention
The object of the present invention is to provide a kind of sensitive light shield, this light shield is the grown junction crystal quickly.
For achieving the above object, the invention provides a kind of sensitive light shield, this light shield is made of quartz layer and the chromium that covers the quartz layer surface at least, wherein, the quartz layer thickness of this light shield is greater than 0.5mm, and the thickness of chromium is 800A, the transmittance of described light shield is 40% to 60%, the graph style of described light shield be line and space separately, the ratio in described light mask image center line and space is 1.0/10.0 to 1.0/5.0, the pattern line size of described light shield is 1.0um to 1.6um.
Compared with prior art, sensitive light shield of the present invention can possess specific thickness, transmittance, figure type and pattern line size property, under identical condition, sensitive light shield can be than existing mask grown junction crystal quickly, so that earlier adopt remedial measures in successive process.
Description of drawings
Grown junction crystal quickly is so that earlier adopt remedial measures in successive process.
Description of drawings
To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is the contrast synoptic diagram of sensitive light shield of the present invention and common light shield grown junction crystalline substance.
Embodiment
The invention provides a kind of sensitive light shield, this light shield possesses some specific technical parameters, and is as shown in table 1 below:
Table 1
The light shield that possesses all features of table 1 is exactly a sensitive light shield of the present invention.
See also Fig. 1, the bright spot of white promptly is crystallization.Experiment showed, that under identical condition this sensitive light shield is compared with common light shield, sensitive light shield is easier grown junction crystal in exposure process.
Claims (1)
1. sensitive light shield, this light shield is made of quartz layer and the chromium that covers the quartz layer surface at least, it is characterized in that: the quartz layer thickness of this light shield is greater than 0.5mm, and the thickness of chromium is 800A, the transmittance of described light shield is 40% to 60%, the graph style of described light shield be line and space separately, the ratio in described light mask image center line and space is 1.0/10.0 to 1.0/5.0, the pattern line size of described light shield is 1.0um to 1.6um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101480800A CN101211106B (en) | 2006-12-27 | 2006-12-27 | Sensitive light shield |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101480800A CN101211106B (en) | 2006-12-27 | 2006-12-27 | Sensitive light shield |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101211106A CN101211106A (en) | 2008-07-02 |
| CN101211106B true CN101211106B (en) | 2010-06-16 |
Family
ID=39611220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101480800A Expired - Fee Related CN101211106B (en) | 2006-12-27 | 2006-12-27 | Sensitive light shield |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101211106B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1115408A (en) * | 1993-12-31 | 1996-01-24 | 现代电子产业株式会社 | Half-tone type phase shift mask and method for fabricating the same |
| CN1162766A (en) * | 1995-06-30 | 1997-10-22 | 现代电子产业株式会社 | Phase shift mask and method for fabricating the same |
| CN1410831A (en) * | 2001-09-28 | 2003-04-16 | 保谷株式会社 | Method for making grey mask, grey mask and pattern transfer method |
-
2006
- 2006-12-27 CN CN2006101480800A patent/CN101211106B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1115408A (en) * | 1993-12-31 | 1996-01-24 | 现代电子产业株式会社 | Half-tone type phase shift mask and method for fabricating the same |
| CN1162766A (en) * | 1995-06-30 | 1997-10-22 | 现代电子产业株式会社 | Phase shift mask and method for fabricating the same |
| CN1410831A (en) * | 2001-09-28 | 2003-04-16 | 保谷株式会社 | Method for making grey mask, grey mask and pattern transfer method |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平10-268505A 1998.10.09 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101211106A (en) | 2008-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111118 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100616 Termination date: 20181227 |