CN101201553A - Illumination optical system, exposure apparatus, and exposure method - Google Patents

Illumination optical system, exposure apparatus, and exposure method Download PDF

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Publication number
CN101201553A
CN101201553A CNA2007101956440A CN200710195644A CN101201553A CN 101201553 A CN101201553 A CN 101201553A CN A2007101956440 A CNA2007101956440 A CN A2007101956440A CN 200710195644 A CN200710195644 A CN 200710195644A CN 101201553 A CN101201553 A CN 101201553A
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light
illumination
polarization
plane
polarization state
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CN101201553B (en
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谷津修
田中裕久
村松研一
小峯典男
西永寿
松山知行
工藤威人
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Nikon Corp
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Nikon Corp
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Abstract

An illumination optical system for, when installed in an exposure system, realizing an adequate illumination condition by varying the polarized state of the illumination light according to the pattern characteristics of the mask while suppressing the loss of the intensity of light. The illumination optical system has a light source unit (1) for supplying a linearly polarized light for illuminating surfaces (M, W) to be illuminated therewith and polarized state changing means (10, 20) for changing the polarized state of the illuminating light from a specific polarized state to a nonpolarized state and vice versa. The polarized state changing means are arranged in the optical path between the light source unit and the surfaces to be illuminated. The polarized state changing means can be removed from the illumination optical path and has a depolarizer (20) for depolarizing the incident linearly polarized light as necessary.

Description

Illumination optical apparatus, exposure device and exposure method
The application is an application number: 200380104450.5, and the applying date: on Dec 2nd, 2003, name is called dividing an application of " illumination optical apparatus, exposure device and exposure method " patented claim.
Technical field
The present invention relates to a kind of illumination optical apparatus, exposure device and exposure method, particularly relate to a kind of exposure device of making the microdevice of semiconductor subassembly, photography assembly, LCD assembly and thin-film head etc. with micro-photographing process.
Background technology
In the typical exposure device of this kind, the light beam that goes out from light emitted forms the secondary souce as the material surface light source by most light source constituted via the fly's-eye lens as optical integrator.From the light beam of secondary souce,, just be incident to condenser lens through being configured in after near the fly's-eye lens rear focal plane aperture limited.
The light beam that is focused lens institute optically focused then throws light on overlappingly and has formed on the light shield of predetermined pattern.The light that penetrated mask pattern then passes through projection optical system, is imaged on the wafer.In this way, mask pattern just is projected exposure (transfer printing) to wafer.In addition, the pattern that is formed on the light shield is high integration, so for the pattern transfer that this is trickle was to the wafer, it was necessary obtaining uniform Illumination Distribution on wafer.
On the rear focal plane of fly's-eye lens, form circular secondary souce, its size is changed, quite come on the scene with the technology that changes same tone (coherence) σ (the pupil footpath of σ value=stop opening/projection optical system, the perhaps numerical aperture of the numerical aperture of σ value=lamp optical system exiting side/projection optical system light incident side) that throws light on.In addition, on the rear focal plane of fly's-eye lens, form the secondary souce of wheel belt shape or four utmost point shapes, also receive publicity with the depth of focus of lifting projection optical system and the technology of resolution.
In above-mentioned traditional exposure device, in response to the characteristic of mask pattern, carry out general circular illumination according to circular secondary souce, carry out deformation illumination (illumination of wheel band or quadrupole illuminating) according to wheel belt shape or four utmost point shape secondary souces.Yet, in response to the mask pattern characteristic, generally be the polarized state of light that does not change the illumination light shield, with the light of the unpolarized state light shield that throws light on.Therefore, can't realize necessary lighting condition, come transfer printing mask pattern verily
Because the problems referred to above, purpose of the present invention provides a kind of illumination optical apparatus, for example is equipped in the exposure device, just can suppress the light quantity damage and the illumination polarized state of light is changed according to the characteristic of mask pattern, is implemented the appropriate illumination condition.
Another object of the present invention provides a kind of exposure device and exposure method, its use can be according to the characteristic of mask pattern, the illumination optical apparatus that the illumination polarized state of light is changed, thereby can carry out good exposure with the appropriate illumination condition according to the pattern properties of light shield.
Summary of the invention
In order to solve above-mentioned problem, first kenel of the present invention proposes a kind of illumination optical apparatus, and it has light source portion, so that rectilinearly polarized light to be provided, and shines plane of illumination with the light that light source portion is sent.Illumination optical apparatus comprises the polarization state switch means, and it is configured in the light path between light source portion and this plane of illumination, and the polarized state of light of illumination plane of illumination is switched between specific polarization state and unpolarized state.
The polarization state switch means comprises depolarizer, can freely insert and break away from illumination path, according to the rectilinearly polarized light of incident need being depolarized.
According to first kenel of the present invention, when the specific polarization state was the situation of straight line polarization state, the polarization state switch means can change the plane of polarization of straight line polarization.In addition, the polarization state switch means can comprise phase place portion material, changes the plane of polarization of the rectilinearly polarized light of incident according to demand.In this situation, phase place portion material has 1/2 wavelength plate, and its crystal optics axle is center and rotation freely with the optical axis of illumination optical apparatus.
In addition, according to above-mentioned first kenel, depolarizer comprises quartzy prism, and its crystal optics axle is that the optical axis with illumination optical apparatus is center and rotation freely.In addition, depolarizer more comprises polarizing beam splitter and reflecting system.Reflecting system is to make the light path of the light that passes polarizing beam splitter consistent in fact with the light path of the light that is polarized the last reflection of optical splitter, and the light that is polarized spectrophotometric reflection is reflected most times in the plane, returns polarizing beam splitter.Polarizing beam splitter and reflecting system are center and rotation freely with the optical axis of illumination optical apparatus.
According to above-mentioned first kenel, depolarizer more comprises polarizing beam splitter and reflecting system in addition.Reflecting system is to make the light path of the light that passes polarizing beam splitter consistent in fact with the light path of the light that is polarized the last reflection of optical splitter, and the light that is polarized spectrophotometric reflection is reflected most times in the plane, returns polarizing beam splitter.Polarizing beam splitter and reflecting system can be inserted integratedly and break away from illumination path.
In addition, according to above-mentioned first kenel, the polarization state switch means more comprises the second phase place portion material, converts the elliptically polarized light of incident to rectilinearly polarized light.In addition, the second phase place portion material more comprises 1/4 wavelength plate, and 1/4 wavelength plate is that optical axis with illumination optical apparatus is center and rotation freely.
In addition, according to above-mentioned first kenel, be configured in the light path between light source portion and the polarization state switch means, in the material of the formed smooth breakthrough portion of cubic system, the light direct of travel is to set for than crystal orientation＜110〉more approaching＜111〉or＜100.In this situation, be configured in the light path between polarization state switch means and the plane of illumination, in the material of the formed smooth breakthrough portion of cubic system, the light direct of travel is to set for than crystal orientation＜110〉more approaching＜111〉or＜100.
Above-mentioned smooth breakthrough portion material more comprises the optic material, is positioned at regularly in the light path, and wherein the optical axis of optic material is set for and crystal orientation＜111〉or crystal orientation＜100 go up in fact consistent.In addition, light breakthrough portion material comprises right-angle prism, and as back reflector, wherein the plane of incidence of right-angle prism and exit facet are to set for to go up in fact that { 100} is consistent, and the reflecting surface of right-angle prism is set for, and { 110} is consistent with crystal plane in fact with crystal plane.In addition, light breakthrough portion material more comprises parallel panel, its relatively inclined light shaft be arranged in the light path, make along the light of optical axis incident is parallel and move, wherein the optical axis of parallel panel is to set in fact and crystal orientation＜100〉consistent.
In addition, according to above-mentioned first kenel, illumination optical apparatus more comprises illumination pupil distribution formation means, according to the light beam that sends from light source portion, near the pupil face of illumination optical apparatus or pupil face, forms predetermined light intensity distribution; The change means, in order to the change predetermined light intensity distribution shape with the size at least one of them; And the leaded light optical system, will direct into plane of illumination from the light beam that predetermined light intensity distribution is sent.In this situation, the polarization state switch means is according to the variation of one of them at least with size of the shape of predetermined light intensity distribution, changes the polarized state of light of the plane of illumination that is used for throwing light on.In addition, the polarization state switch means is according to the variation of one of them at least with size of the shape of predetermined light intensity distribution, and the polarized state of light of the plane of illumination that is used for throwing light on is switched between straight line polarization state and unpolarized state.
In addition, words according to above-mentioned first kenel, the polarization state switch means is that under aforementioned specific polarization state, the S1 composition of the Stoker parameter of light is to satisfy following condition according to the variation of one of them at least of shape with the size of this predetermined light intensity distribution: 0.6≤| S1|.In addition, under unpolarized state, the S1 of the Stoker parameter of light and S2 composition are to satisfy following condition: | S1|≤0.1 and | S2|≤0.1.In addition, illumination optical apparatus more comprises polarization state change correction means, is configured in the light path between light source portion and the plane of illumination, in order to revise the change of the polarization state on this plane of illumination.In this situation, polarization state change correction means more comprises the polarization monitor, is configured in the light path between polarization state switch means and the plane of illumination, in order to detect polarized state of light; And control part, according to the output of polarization monitor, with control polarization state switch means.
In addition, according to above-mentioned first kenel, the polarization state switch means more comprises 1/2 wavelength plate, and having the crystal optics axle is center and rotation freely with the optical axis of illumination optical apparatus; And 1/4 wavelength plate, having the crystal optics axle is center and rotation freely with the optical axis of illumination optical apparatus.When the crystal optics axle of the crystal optics axle of 1/4 wavelength plate and 1/2 wavelength plate is changed, control part is responded the testing result of polarization monitor gained, make the angle position of the crystal optics axle of 1/4 wavelength plate be positioned at the position of wanting, so that the elliptically polarized light of incident is transformed into rectilinearly polarized light, and make the angle position of the crystal optics axle of 1/2 wavelength plate be positioned at the position of wanting, so that the rectilinearly polarized light of incident is transformed into the rectilinearly polarized light that has plane of polarization in a predetermined direction.In this situation, when making the crystal optics axle change of 1/4 wavelength plate, control part is positioned at rough first angle position that becomes when maximum of the variation contrast of Stoker parameter S 1 composition in the testing result with the angle position of the crystal optics axle of 1/4 wavelength plate, and the crystal optics axle at 1/4 wavelength plate is set under the state of first angle position, when the crystal optics axle that makes 1/2 wavelength plate changes, the angle position of the crystal optics axle of 1/2 wavelength plate is positioned at Stoker parameter S 1 composition in the testing result is rough to become second angle position maximum or hour.
In addition, words according to above-mentioned first kenel, above-mentioned polarization monitor more comprises optical splitter, is configured in the light path between polarization state switch means and the plane of illumination, in order to capture with the reflected light of the different polarization state of polarization of incident light state from light path or to penetrate light; And light intensity detector, in order to detecting the reflected light that from light path, is captured by optical splitter or to penetrate light intensity, and according to the output of light intensity detector, to detect the polarization of incident light state that incides optical splitter.In this situation, optical splitter has reflection characteristic or through characteristic, makes to be contained in reflected light maybe this penetrates the P polarization intensity I p of light and the strength ratio Ip/Is of S polarization intensity I s satisfies the condition of Ip/Is＜1/2 or Ip/Is＞2.
In addition, words according to above-mentioned first kenel, illumination optical apparatus more comprises illumination pupil distribution formation means, the light beam that sends according to light source portion, near the formation predetermined light intensity distribution pupil face of illumination optical apparatus or pupil face, the pupil distribution formation means of wherein throwing light on are the directions near the face of pupil face on the predetermined direction on the corresponding plane of illumination or pupil face, formation is across the zone of two highlight strengths distributions at interval, wherein the polarization state switch means is the polarized state of light with the plane of illumination that throws light on from two highlight strength distributed areas, set for the predetermined direction vertical direction on have the straight line polarization state of plane of polarization.In this situation, aforementioned two highlight strength branch zones are to be symmetrical in the optical axis of illumination optical apparatus and to form, it wherein is the center with the optical axis, be defined as σ o with the ratio of the diameter phi p of external circumscribed circle diameter φ o in two highlight strength branches zones and pupil face, σ o=φ o/ φ p, wherein σ o satisfies following condition: 0.7≤σ o.In addition, two highlight strength branch zones are to be symmetrical in the optical axis of this illumination optical apparatus and to form, it wherein is the center with the optical axis, be defined as σ o with the ratio φ o/ φ p of the diameter phi p of external circumscribed circle diameter φ o in two highlight strength branches zones and pupil face, and with the optical axis is the center, be defined as σ i with the ratio φ i/ φ p of the diameter phi p of inscribed circle diameter φ i that connects in two highlight strength branch zones and pupil face, then 0.5≤σ i/ σ o.
Second kenel of the present invention provides a kind of illumination optical apparatus, and it is according to the light that sends from light source portion, with the specific polarization state plane of illumination that throws light on.
Illumination optical apparatus comprises the leaded light means, is configured in the light path between light source portion and the plane of illumination, will guide to plane of illumination from the photoconduction that light source portion is sent; And
Polarization state change correction means is configured in the light path between light source portion and the plane of illumination, in order to revise the polarization state change on this plane of illumination.
According to above-mentioned second kenel, polarization state change correction means more comprises polarization state adjustment means, is configured in the light path between light source portion and the plane of illumination, in order to be adjusted at the polarization state on the plane of illumination; The polarization monitor is configured in the light path between light source portion and the plane of illumination, in order to detect polarized state of light; And control part, according to the output of polarization monitor, adjust means with the control polarization state.In this situation, polarization state adjustment means comprise can adjust phase-plate, is configured in the light path between light source portion and the polarization monitor.In addition, the leaded light means comprise the optic material, and the polarized state of light with the incident of making changes and the characteristic of ejaculation.Above-mentioned optic material can be formed by the crystal optics material.
The present invention's the 3rd kenel provides a kind of illumination optical apparatus, and it is according to the light that light source portion is sent, and plane of illumination throws light on.
This illumination optical apparatus comprises the leaded light means, is configured in the light path between light source portion and the plane of illumination, guides to plane of illumination in order to the photoconduction that light source portion is sent;
And the polarization state stabilization tool, be configured in the light path between light source portion and the plane of illumination, in order to be stabilized in the polarization state on the plane of illumination.
According to above-mentioned the 3rd kenel, above-mentioned polarization state stabilization tool can more comprise polarization state adjustment means, is configured in the light path between light source portion and the plane of illumination, in order to be adjusted at the polarization state on the plane of illumination; The polarization monitor is configured in the light path between light source portion and the plane of illumination, in order to detect polarized state of light; And control part, according to the output of polarization monitor, adjust means with the control polarization state.In this situation, polarization state adjustment means comprise can adjust phase-plate, is configured in the light path between light source portion and the polarization monitor.In addition, the leaded light means comprise the optic material, and the polarized state of light with the incident of making changes and the characteristic of ejaculation.Above-mentioned optic material is formed by the crystal optics material.
In addition, according to above-mentioned the 3rd kenel, the polarization state stabilization tool comprises light breakthrough portion material, and it is configured in the light path between light source portion and the plane of illumination, and forms with the crystalline material of cubic system.In this situation, the light direct of travel of above-mentioned smooth breakthrough portion material is preferably and is set in than crystal orientation＜110〉nearer crystal orientation＜111〉or crystal orientation＜100.Light breakthrough portion material has the optic material in addition, and it is positioned in the aforementioned light path regularly, and the optical axis of this optic material is preferably to be set for and crystal orientation＜111〉or crystal orientation＜100 consistent in fact.Or aforementioned lights breakthrough portion material has the right-angle prism as back reflector, and is preferable, and the plane of incidence of aforementioned right-angle prism and exit facet are to set that { 100} is approximately consistent, and reflection is interviewed and set that { 110} is approximately consistent with crystal plane for crystal plane for.Or light breakthrough portion material has parallel panel, can with respect to inclined light shaft be arranged in the aforementioned light path, make along the light of optical axis incident is parallel and move.Preferable, the optical axis of aforementioned parallel panel is to set for and crystal orientation＜100〉approximately consistent.
The present invention's the 4th kenel provides a kind of method of adjustment of illumination optical apparatus, and illumination optical apparatus is according to the light that sends from light source portion, with the specific polarization state plane of illumination that throws light on.
The method of adjustment of illumination optical apparatus comprises wavelength plate setting step, the crystal optics axle of 1/4 wavelength plate is set in the predetermined angular position in the illumination path of illumination optical apparatus, and the crystal optics axle of 1/2 wavelength plate is set in the predetermined angular position in the illumination path of illumination optical apparatus.
It is when the crystal optics axle of the crystal optics axle of 1/4 wavelength plate and 1/2 wavelength plate is changed respectively that wavelength plate is set step, according to detected next light polarization status detection result in the light path between polarization state switch means and plane of illumination, the crystal optics axle of 1/4 wavelength plate is set in the position of wanting, make the elliptically polarized light of incident convert rectilinearly polarized light to, and the crystal optics axle of 1/2 wavelength plate is set in the reference position, makes the rectilinearly polarized light of incident be transformed into the rectilinearly polarized light that has plane of polarization in a predetermined direction.
Words according to above-mentioned the 4th kenel embodiment, when making the crystal optics axle change of 1/4 wavelength plate, the crystal optics axle of 1/4 wavelength plate is set in rough first angle position that becomes when maximum of the variation contrast of Stoker parameter S 1 composition in the testing result, and the crystal optics axle at 1/4 wavelength plate is set under the state of first angle position, when the crystal optics axle that makes 1/2 wavelength plate changes, the crystal optics axle of 1/2 wavelength plate is set in Stoker parameter S 1 composition in the testing result is rough to become second angle position maximum or hour.In addition, the method for adjustment of illumination optical apparatus comprises that more the illumination pupil forms step, according to the light beam that sends from light source portion, and near the formation predetermined light intensity distribution pupil face of illumination optical apparatus or pupil face; Illumination pupil change step is in order to the shape and big or small one of them change at least with predetermined light intensity distribution; Wavelength plate is reseted and is decided step, according to the change of one of them at least of the shape of predetermined light intensity distribution with size, revise the crystal optics axle of setting 1/4 wavelength plate and 1/2 wavelength plate the crystal optics axle at least one of them.
The present invention's the 5th kenel provides a kind of exposure device, comprise the illumination optical apparatus that first to the 3rd kenel is put down in writing, or the illumination optical apparatus adjusted of the method for adjustment of utilizing the 4th kenel to put down in writing, with predetermined pattern exposure to the photonasty substrate that is configured in aforementioned plane of illumination.
Words according to the present invention's the 5th kenel, exposure device more comprises projection optical system, be configured in the light path between the second setting face that the first setting face that predetermined pattern sets and photonasty substrate set, predetermined pattern image is formed on the second setting face; The pupil intensity distributions forms means, in order to form predetermined light intensity distribution on the pupil of projection optical system and conjugate position or near the position it; And pupil intensity distributions change means, in order to the shape that changes predetermined light intensity distribution and size at least one of them.In this situation, exposure device more comprises polarization state change means, be configured in the light path between light source portion and the plane of illumination, in order to the throw light on polarized state of light of plane of illumination of change, wherein pupil intensity distributions change means are according to predetermined pattern properties, the shape that changes predetermined light intensity distribution and size at least one of them.Polarization state change means are the variations of one of them at least according to shape with the size of predetermined light intensity distribution, change the polarized state of light of the plane of illumination that throws light on.In addition, in this situation, polarization state change means comprise the polarization state switch means, switch between specific polarization state and unpolarized state in order to the polarized state of light of the plane of illumination that will throw light on.The polarization state switch means is switched between specific polarization state and this unpolarized state according to the variation of one of them at least of shape with the size of predetermined light intensity distribution.
In addition, according to the present invention's the 5th kenel, the pupil intensity distributions forms means along on the spacing direction of formed line and space pattern on the light shield, to form two highlight strength distributed areas across the interval.Polarization state change means will be from two highlight strength branch area illuminations to plane of illumination polarized state of light, set for the vertical in fact direction of spacing direction on, have the straight line polarization state of plane of polarization.Or, it is the center with the optical axis of illumination optical apparatus in fact that the pupil intensity distributions forms means, form a highlight strength branch zone, wherein polarization state change means are with the polarized state of light from highlight strength branch area illumination to plane of illumination, set on the direction that formed line and the spacing direction in space are vertical in fact on as the phase shift light shield of light shield, have the straight line polarization state of plane of polarization.In this situation, the ratio of the size in highlight strength branch zone and the diameter phi p of this pupil face is defined as σ, σ=φ/φ p, and wherein σ o satisfies following condition: σ≤0.4.
The present invention's the 6th kenel provides a kind of exposure method, comprise the illumination optical apparatus that first to the 3rd kenel is put down in writing, or the illumination optical apparatus adjusted of the method for adjustment of utilizing the 4th kenel to put down in writing, this exposure method comprises illumination step, via aforementioned illumination optical apparatus, predetermined pattern throws light on.
And step of exposure, with predetermined pattern exposure to the photonasty substrate that is configured in aforementioned plane of illumination.
According to the present invention's the 6th kenel, exposure method can more comprise projection step, uses projection optical system, forms predetermined pattern image; The pupil intensity distributions forms step, in order to form predetermined light intensity distribution on the pupil of projection optical system and conjugate position or near the position it; And pupil intensity distributions change step, in order to the shape that changes predetermined light intensity distribution and size at least one of them.In this situation, pupil intensity distributions change step more comprises according to predetermined pattern properties, the shape that changes predetermined light intensity distribution and size at least one of them, and, change the polarized state of light of the plane of illumination that throws light on according to the shape and the big or small variation of one of them at least of predetermined light intensity distribution.
Words according to the present invention's the 6th kenel, the pupil intensity distributions forms step and more comprises along on the spacing direction of formed line and space pattern on the light shield, to form two highlight strength distributed areas across the interval, and polarized state of light that will be from two highlight strength branch area illuminations to plane of illumination, set for the vertical in fact direction of spacing direction on, have the straight line polarization state of plane of polarization.In this situation, two highlight strength branch zones are to be symmetrical in the optical axis of illumination optical apparatus and to form, it wherein is the center with the optical axis, be defined as σ o with the ratio of the diameter phi p of external circumscribed circle diameter φ o in two highlight strength branches zones and pupil face, σ o=φ o/ φ p, wherein σ o satisfies following condition: 0.7≤σ o.In addition, two highlight strength branch zones are to be symmetrical in the optical axis of illumination optical apparatus and to form, it wherein is the center with the optical axis, be defined as σ o with the ratio φ o/ φ p of the diameter phi p of external circumscribed circle diameter φ o in two highlight strength branches zones and pupil face, and with the optical axis is the center, be defined as σ i, 0.5≤σ i/ σ o with the ratio φ i/ φ p of the diameter phi of the inscribed circle diameter φ i that connects in two highlight strength branch zones and this pupil face.
The present invention's the 7th kenel provides a kind of exposure method, in order to will be set in the pattern of first light shield, exposes to the photonasty substrate that is configured on second.This exposure method comprises:
First step: rectilinearly polarized light is provided;
Second step: according to the rectilinearly polarized light that first step provided, the illumination light shield;
Third step: will be to the photonasty substrate by the pattern exposure of the light shield of second step illumination;
The 4th step: the polarized state of light with on second, switch between specific polarization state and the unpolarized state, wherein according to the rectilinearly polarized light of incident,, insert or break away from illumination path being used for the device that depolarizes of unpolarizedization according to demand.
According to the present invention's the 7th kenel, the 4th step of above-mentioned exposure method can more comprise the step of the plane of polarization that changes the straight line polarization.In addition, the third step of exposure method can more comprise: use projection optical system that the pattern of light shield is formed on second; With the position or near the position it of the pupil conjugation of projection optical system on, form predetermined light intensity distribution; The shape that changes predetermined light intensity distribution and size at least one of them; And, change the polarized state of light of illumination plane of illumination according to the variation of one of them at least of the shape of predetermined light intensity distribution with size.
The present invention's the 8th kenel provides a kind of exposure method, in order to will be set in the pattern of first light shield, exposes to the photonasty substrate that is configured on second.Exposure method comprises:
First step: light is provided;
Second step: according to the light that first step provided, the illumination light shield;
Third step:, will be to the photonasty substrate at the pattern exposure of the illuminated light shield of second step; And
The 4th step is revised the change of the polarized state of light on second.
According to the present invention's the 8th kenel, exposure method more comprises the 5th step, detects polarized state of light.
The 4th step more comprises a step, according to the detected light polarization state of the 5th step, adjusts the polarization state on second.
The present invention's the 9th kenel provides a kind of illumination optical apparatus, and the light that it sends according to light source portion is with the specific polarization state plane of illumination that throws light on.
Illumination optical apparatus comprises polarization state change means, is configured in the light path between light source portion and the plane of illumination, to change the polarized state of light of the above-mentioned plane of illumination of illumination; And
The aspect ratio conversion means are in order to change the aspect ratio of formed light intensity distributions on the illumination pupil that substantially concerns for fourier transform with aforementioned plane of illumination.
According to the present invention's the 9th kenel, polarization state change means can possess the polarization state switch means, switch between specific polarization state and unpolarized state in order to the polarized state of light of the aforementioned plane of illumination that will throw light on.In addition, words according to ninth embodiment of the invention, aspect ratio variation means be configured in aforementioned plane of illumination substantially near the position of fourier transform relation or its, and comprise the optical module group, it has the function that changes the magnification on the vertical both direction.
The present invention's the tenth kenel provides a kind of exposure device, comprises the illumination optical apparatus that above-mentioned the 9th kenel is put down in writing, in order to the pattern exposure of light shield to the photonasty substrate that is configured on the aforementioned plane of illumination.
According to the present invention's the tenth kenel, aforementioned polarization state change means change polarized state of light according to the pattern properties of light shield; Aforementioned aspect ratio changes the pattern properties of means according to light shield, changes the aspect ratio of formed light intensity branch on the illumination pupil.
The 11 kenel of the present invention provides a kind of exposure method, with the mask pattern that is set in first, exposes to being set on second the photonasty substrate.This exposure method comprises:
First step: the light that the specific polarization state is provided;
Second step: according to the light that first step provided, the illumination light shield;
Third step: will expose to the photonasty substrate in the illuminated mask pattern of second step;
The 4th step: the polarized state of light of change on second;
The 5th step: the aspect ratio that changes formed light intensity distributions on the illumination pupil that substantially concerns with second face for fourier transform.
According to above-mentioned the 11 kenel, the 4th step changes polarized state of light according to the pattern properties of light shield.In addition, according to above-mentioned the 11 kenel, the 5th step changes formed light intensity aspect ratio on the illumination pupil according to the pattern properties of light shield.
Twelveth embodiment of the invention provides a kind of illumination optical apparatus, and the light that sends with light source portion shines plane of illumination.Illumination optical apparatus comprises:
Polarization illumination is set means, in order to the polarized state of light of the plane of illumination that will throw light on, sets the specific polarization state for; And
Optical integrator is configured between light source portion and the plane of illumination.
Optical integrator comprises the first one dimension cylindrical lens array that forms along the spacing arrangement of predetermined first direction; And the second one dimension cylindrical lens array that forms with spacing arrangement along the second direction of intersecting with first direction.
According to the present invention's the tenth dichotype, first and second one dimension cylindrical lens array is for being arranged on integratedly on the light peneration substrate.
According to the present invention's the tenth dichotype, illumination optical apparatus comprises most the cylindrical lens array boards that comprise first and second one dimension cylindrical lens array.Those cylindrical lens array boards are the optical axis directions along illumination optical apparatus, dispose at interval across one.In addition, along the spacing of the first direction of the first one dimension cylindrical lens array and along the spacing of the second direction of the second one dimension cylindrical lens array, a spacing below 2mm to be arranged at least.
The present invention's the 13 kenel provides a kind of exposure device, comprises the illumination optical apparatus that the tenth dichotype is put down in writing, with the pattern exposure of light shield to the photonasty substrate of the aforementioned plane of illumination of configuration.
The present invention's the 14 kenel provides a kind of exposure method, comprises illumination step: the illumination optical apparatus that uses the tenth dichotype to put down in writing, and light shield throws light on; And step of exposure, with the pattern exposure of aforementioned light shield to the photonasty substrate that is configured on the aforementioned plane of illumination.
The present invention compared with prior art has tangible advantage and beneficial effect.Via as can be known above-mentioned, the invention relates to a kind of illumination optical apparatus, exposure device and exposure method.This illumination optical apparatus for example is equipped in the exposure device, just can suppress the light quantity damage and the illumination polarized state of light is changed according to the characteristic of mask pattern, is implemented the appropriate illumination condition.Has the light source portion 1 that rectilinearly polarized light is provided, the light that sends with the light source portion plane of illumination (M, W) that throws light on.Illumination optical apparatus has polarization state switch means (10,20), is configured in the light path between light source portion and the plane of illumination, uses so that the polarized state of light of illumination plane of illumination is done switching between specific polarization state and unpolarized state.The polarization state switch means has more depolarizer 20, and it is configured to and can inserts and break away from illumination path comfortablely, and can depolarize according to required rectilinearly polarized light with incident.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 illustrates the structural representation of the exposure device of the illumination optical apparatus with embodiment of the invention.
So Fig. 2 illustrates with wheel band illumination and the wheel belt shape secondary souce of quadrupole illuminating formation and the synoptic diagram of four utmost point shape secondary souces.
So Fig. 3 illustrates the synoptic diagram of two utmost point shape secondary souces that form with the illumination of two utmost points.
Fig. 4 illustrates the phase place portion material of Fig. 1 and the configuration diagram of depolarizer.
Fig. 5 illustrates the configuration diagram of the polarization state switch means of the first variation example.
Fig. 6 illustrates the configuration diagram of the polarization state switch means of the second variation example.
Fig. 7 illustrates the configuration diagram of the polarization state switch means of the 3rd variation example.
Fig. 8 illustrates the configuration diagram of the depolarizer that changes example.
Fig. 9 illustrates the internal structure synoptic diagram that is configured in the Beam matching unit between light source and the polarization state switch means in Fig. 1.
Figure 10 illustrates the key diagram about the crystal orientation of fluorite.
Figure 11 illustrates the exemplary plot that is used for elliptic polarization is transformed into 1/4 wavelength plate of straight line polarization of being set up in the polarization state switch means.
Figure 12 illustrates and makes semiconductor subassembly with the method flow diagram as micromodule.
Figure 13 illustrates and makes LCD assembly with the method flow diagram as micromodule.
Figure 14 illustrates in the illumination of two utmost points, shines the overview example figure of light shield with the light of straight line polarization state.
Figure 15 illustrates in circular illumination, shines the overview example figure of light shield with the light of straight line polarization state.
Figure 16 illustrates in the exposure device of Fig. 1, sets up the configuration diagram of the polarization monitor that is used for detecting the illumination polarized state of light.
Figure 17 illustrates the schematic perspective view of inner structure of the polarization monitor of Figure 16.
Figure 18 illustrates the method for adjustment process flow diagram of the crystal optics axle of the crystal optics axle of 1/4 wavelength plate of polarization state switch means among Figure 11 and 1/2 wavelength plate.
Figure 19 illustrates when the crystal optics axle of 1/4 wavelength plate is fixed on the standard angle position of-45 degree, and the crystal optics axle of 1/2 wavelength plate is at the output variation diagram of the polarization monitor of each angle position.
Figure 20 illustrates when the crystal optics axle of 1/4 wavelength plate is set in the state of each angle position, and the crystal optics axle of 1/2 wavelength plate is at the output variation diagram of the polarization monitor of each angle position.
Figure 21 illustrates the output changes in contrast figure of the polarization monitor of crystal optics axle under the state of each angle position of 1/4 wavelength plate.
The crystal optics axle that Figure 22 illustrates when 1/4 wavelength plate is fixed on when making elliptically polarized light be transformed into first angle position of rectilinearly polarized light, and the crystal optics axle of 1/2 wavelength plate is at the output variation diagram of the polarization monitor of each angle position.
Figure 23 illustrates the configuration diagram that has with the exposure device of the illumination pupil distribution formation means of Fig. 1 or Figure 16 dissimilar structure.
Figure 24 illustrates in Figure 23, is configured in the front side lens group of afocal lens and the circular cone in the light path between the rear side lens group and revolves a configuration diagram of prism optical system.
Figure 25 illustrates circular cone and revolves the Action Specification figure that a prism optics is a formed secondary souce in throwing light on for the wheel band that changes example at Figure 23.
Figure 26 illustrates the Action Specification figure of zoom lens for formed secondary souce in the wheel band illumination that changes example at Figure 23.
Figure 27 illustrates in Figure 23, is configured in the front side lens group and pair configuration diagram right with second cylindrical lens of first cylindrical lens in the light path between the rear side lens group of afocal lens.
Figure 28 illustrates first cylindrical lens pair and second cylindrical lens to the Action Specification figure for formed secondary souce in the wheel band illumination that changes example at Fig. 23.
Figure 29 illustrates first cylindrical lens pair and second cylindrical lens to the Action Specification figure for formed secondary souce in the wheel band illumination that changes example at Figure 23.
Figure 30 illustrates first cylindrical lens pair and second cylindrical lens to the Action Specification figure for formed secondary souce in the wheel band illumination that changes example at Figure 23.
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of illumination optical apparatus, exposure device and exposure method, structure, method, step, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Fig. 1 possesses the exposure device Organization Chart of the illumination optical apparatus of the embodiment of the invention for summary illustrates.As shown in Figure 1, for being set at the Z axle, the direction that is parallel to Fig. 1 drawing on wafer W surface is for being set at Y-axis along the normal direction of the wafer W of sensitive substrate, on wafer W surface perpendicular to the direction of Fig. 1 drawing for being set at X-axis.In addition, in Fig. 1, illumination optical apparatus is taken turns the band illumination for setting.
The present embodiment exposure device possesses LASER Light Source 1, in order to exposure light (illumination light) to be provided.LASER Light Source 1 can be used the KrF quasi-molecule laser source that wavelength 248nm light for example is provided, or ArF quasi-molecule laser source of wavelength 193nm light etc. is provided.The rough parallel beam that penetrates from LASER Light Source 1 along the Z direction has the section that extends into elongated rectangular on directions X, and incides by lens to 2a the light diffuser that 2b constituted (beam expander) 2.Each lens 2a, 2b has negative refractive power and positive refractive power respectively on (on the YZ plane) on Fig. 1 drawing.Therefore, the light beam that incides light diffuser 2 can be extended on Fig. 1 drawing, and be shaped to the light beam with predetermined rectangular section.
See through as the rough parallel beam of the light diffuser 2 of shaping optical system and be partial to after 3 in mirror is partial to the Y direction, via phase place portion material 10, depolarizer (unpolarizedization assembly) 20 and diffraction optics assembly 4, be incident to Afocal zoom lens (afocal zoom lens) 5.Phase place portion material 10 can describe in detail with effect hereinafter with the structure of depolarizer 20.In general, the diffraction optics assembly on substrate, form have exposure light (illumination light) wavelength between left and right every the terrace structure of (pitch), and have of the effect of incident beam diffraction to predetermined angular.Specifically, when having the parallel beam incident of rectangular section, diffraction optics assembly 4 has on its far field (far field) or fraunhofer (fraunhofer) diffraction zone, forms the function of circular light intensity distributions.
Therefore,, can on the pupil position of Afocal zoom lens 5, form the circular light intensity distributions, that is have the light beam of circular section through the light beam of diffraction optics assembly 4.Diffraction optics assembly 4 is for being configured to the structure that can keep out of the way from illumination path.Afocal zoom lens 5 is kept afocal system (no focus optical system) on one side for being configured to, on one side to change multiplying power continuously in predetermined scope.The light beam that sees through Afocal zoom lens 5 is incident to wheel band illumination diffraction optics assembly 6.Afocal zoom lens 5 essence link together the emission initial point of diffraction optics assembly 4 and the diffraction face of diffraction optics assembly 6 each other optical conjugate.Be concentrated on the diffraction face of diffraction optics assembly 6 or near it numerical aperture of any on face change for the mode relevant with the multiplying power of Afocal zoom lens 5.
When parallel beam incident, the illumination of wheel band possesses the function that forms the ring-shaped light intensity distributions on its far field with diffraction optics assembly 6.Diffraction optics assembly 6 is configured to freely to insert and takes off on illumination path, and quadrupole illuminating throws light on the diffraction optics assembly 62 and Y direction two utmost points with diffraction optics assembly 61, the illumination of directions X two utmost points with diffraction optics assembly 60, circular illumination and can switch each other for being configured to diffraction optics assembly 63 etc.Quadrupole illuminating with diffraction optics assembly 60, circular illumination with diffraction optics assembly 61, the illumination of directions X two utmost points with diffraction optics assembly 62 and the illumination of Y direction two utmost points structure and effect narration hereinafter with diffraction optics assembly 63 etc.
Light beam through diffraction optics assembly 6 can be incident to zoom lens 7.The plane of incidence of microlens array (microlens array, or fly's-eye lens) 8 is to be positioned near the rear focal plane of zoom lens 7.Microlens array 8 is served as reasons and is arranged in file and the intensive most individual optical module that the positive refractive power micro lens is constituted that has.Generally speaking, microlens array for example carries out etch processes and comes framework to form in the mode that forms the micro lens group for utilizing on parallel panel.
Each micro lens that constitutes microlens array is more small than each lens subassembly that constitutes fly's-eye lens.In addition, microlens array is different with the fly's-eye lens that lens subassembly constituted of isolating each other, and most micro lens (small plane of refraction) is not isolated mutually, but integrally formed.But this puts to be aligned in length and breadth mode from the lens subassembly with positive refractive power, and microlens array is identical with fly's-eye lens, is the optical integrator of wavefront division type.
As mentioned above,, be formed at the light beam of the locational circular light intensity of pupil of Afocal zoom lens 5, after penetrating from Afocal zoom lens 5, can become light beam, and be incident to diffraction optics assembly 6 with various angle compositions from seeing through diffraction optics assembly 4.In other words, diffraction optics assembly 4 is for constituting the optical integrator with angular light beam shaping function.On the other hand, when parallel beam incident, diffraction optics assembly 6 possesses as the function that forms the optical beam transformation assembly of ring-shaped light intensity distributions on its far field.Therefore, the light beam that sees through diffraction optics assembly 6 can be at (also on the plane of incidence at microlens array) on the rear focal plane of zoom lens 7, and forming with for example optical axis AX is the wheel belt shape photograph open country at center.
Formed wheel belt shape is that the focal length that depends upon zoom lens 7 changes according to wild external diameter on the plane of incidence of microlens array 8.So, zoom lens 7 substantially concern the plane of incidence that links diffraction optics assembly 5 and microlens array 8 with fourier transform.The light beam that is incident to microlens array 8 on the rear focal plane of microlens array 8, then shown in Fig. 2 A, can form formed according to most light sources (hereinafter referred to as secondary souce) of wild identical wheel belt shape with incident beam for being cut apart by Quadratic Finite Element ground.
The light beam that formed wheel belt shape secondary souce sends on microlens array 8 rear focal plane is after the optically focused effect that is subjected to Focused Optical system 9, on the light shield M that has formed predetermined pattern that just throws light on overlappingly.See through light and make the light beam of the pattern of M, through projection optical system PL, just the image with mask pattern is formed on the wafer W of photonasty substrate.In view of the above, on the plane vertical (XY plane),, do overall exposing or scan exposure on one side, and the pattern of light shield M is exposed on each exposure area on the wafer W seriatim on one side with drive controlling wafer W two-dimensionally with the optical axis AX of projection optical system PL.
In the present embodiment, when the multiplying power of Afocal zoom lens 5 changes, the centre-height of wheel belt shape secondary souce (the circular central line with distance optical axis AX) d0 can't change, and only has its width (difference of external diameter (diameter) and internal diameter (diameter) 1/2) w0 to change.That is, utilize the multiplying power that makes Afocal zoom lens 5 to change, can make the size (external diameter) and its shape (the wheel band ratio: inner/outer diameter) change simultaneously of wheel belt shape secondary souce.
In addition, when the focal length of zoom lens 7 changed, the wheel band of wheel belt shape secondary souce can not change than, and centre-height d0 and width w0 can change simultaneously.That is, utilize the focal length that makes zoom lens 7 to change, can not change the wheel band ratio of wheel belt shape secondary souce, and change external diameter.As mentioned above, in the present embodiment, utilize suitably to change the multiplying power of Afocal zoom lens 5 and the focal length of zoom lens 7, the external diameter of wheel belt shape secondary souce is changed, only change its wheel band ratio.
In addition, utilize diffraction optics assembly 60 is set in the illumination path to replace diffraction optics assembly 6, can carry out quadrupole illuminating.When parallel beam incident, quadrupole illuminating possesses the function that forms four point-like light intensity distributions on its far field with diffraction optics assembly 60.Therefore, can be on the plane of incidence of microlens array 8 through the light beam of diffraction optics assembly 60, for example form with optical axis AX be four of center circular according to wild four utmost point shapes that constituted according to wild.Therefore, shown in Fig. 2 A, on the rear focal plane of microlens array 8, also can form with its plane of incidence on form according to wild four identical utmost point shape secondary souces.
In quadrupole illuminating, identical during also with the illumination of wheel band, change by the multiplying power that makes Afocal zoom lens 5, external diameter (the external diameter of a circles of four the circular face light sources) Do that can change four utmost point shape secondary souces together is with than (the external diameter of a circle Do of four circular face light sources of diameter Di/ of the inscribed circle of four circular face light sources) with wheel.In addition, change, can not change the wheel band ratio of four utmost point shape secondary souces, and change its external diameter by the focal length that makes zoom lens 7.Therefore, utilize suitably to change the multiplying power of Afocal zoom lens 5 and the focal length of zoom lens 7, the external diameter of four utmost point shape secondary souces is changed, only change its wheel band ratio.
In addition, by diffraction optics assembly 4 is kept out of the way from illumination path, and circular illumination is set in the illumination path to replace diffraction optics assembly 6 or 60 with diffraction optics assembly 61, just can carries out general circular illumination.In this situation, the light beam that has rectangular section along optical axis AX just is incident to Afocal zoom lens 5.The light beam that incides Afocal zoom lens 5 just is exaggerated according to its multiplying power or dwindles, and has light beam 5 outgoing along optical axis AX from Afocal zoom lens like this of rectangular section, reenters and is incident upon diffraction optics assembly 61.
Identical with the situation of diffraction optics assembly 4, when having the parallel beam incident of rectangular section, circular illumination possesses the function that forms the circular light intensity distributions in its far field with diffraction optics assembly 61.Therefore, through zoom lens 7, at the plane of incidence place of microlens array 8, forming with optical axis AX is that central circular is according to wild with diffraction optics assembly 61 formed circular light beams.As a result, also forming with optical axis AX in the rear focal plane of microlens array 8 is the central circular secondary souce.In this situation, utilize the multiplying power of change Afocal zoom lens 5 or the focus of zoom lens 7, just can suitably change the external diameter of circular secondary souce.
Then, utilize diffraction optics assembly 62 is set in the illumination path to replace diffraction optics assembly 6,60 or 61, just can carry out the illumination of directions X two utmost points.When parallel beam incident, the illumination of directions X two utmost points possesses in its far field on directions X with diffraction optical assembly 62, forms the function of the two point-like light intensity distributions at the interval that is separated by.Therefore, just on the plane of incidence of microlens array 8, form is the center with optical axis AX for example to the light beam of process diffraction optics assembly 62, on directions X, forms by two circles at the interval that is separated by and shines wild two utmost point shapes that constituted according to the open country.As a result, as shown in Figure 3A,, on the rear focal plane of microlens array 8, also can form two utmost point shape secondary souces along directions X with formed on the plane of incidence according to wild identical.
In addition, utilize diffraction optics assembly 63 is set in the illumination path to replace diffraction optics assembly 6,60,61 or 62, just can carry out the illumination of Y direction two utmost points.When parallel beam incident, Y direction two utmost points illuminations with diffraction optical assembly 63 possess its far field along the Z direction (on light shield and the wafer for corresponding to the Y direction) on, the be separated by function of two point-like light intensity distributions at an interval of formation.Therefore, just on the plane of incidence of microlens array 8, form is the center with optical axis AX for example to the light beam of process diffraction optics assembly 63, on the Z direction, forms by two circles at the interval that is separated by and shines wild two utmost point shapes that constituted according to the open country.As a result, shown in Fig. 3 B,, on the rear focal plane of microlens array 8, also can form two utmost point shape secondary souces along the Z direction with formed on the plane of incidence according to wild identical.
Also the situation with quadrupole illuminating is identical in the illumination of two utmost points, by the multiplying power that changes Afocal zoom lens 5, can change external diameter (circumscribed circle diameters of two the circular face light sources) do and the wheel of two utmost point shape secondary souces together and be with than (circumscribed circle diameters of two circular face light sources of inscribed circle diameter di/ of two circular face light sources).In addition, the focal length by changing zoom lens 7 can not change the wheel band ratio of two utmost point shape secondary souces, and change its external diameter.As a result, by the focal length of multiplying power that suitably changes Afocal zoom lens 5 and zoom lens 7, just can not change the external diameter of two utmost point shape secondary souces, and only change its wheel band ratio.
Fig. 4 illustrates the phase place portion material of Fig. 1 and the generalized schematic of depolarizer.With reference to shown in Figure 4, phase place portion material 10 is for can optical axis AX being that 1/2 wavelength plate that the center freely rotates comes framework to form with its crystal optics axle.On the other hand, depolarizer 20 by by the quartzy prism 20a of wedge shape and have quartzy therewith prism 20a mutually the wedge shape quartz prism 20b of auxilliary shape constituted.Quartzy prism 20a and quartz prism 20b are framework all-in-one-piece prism assembly, and can freely insert and take off in illumination path.When using the KrF quasi-molecule laser source to obtain the ArF quasi-molecule laser source, because the polarisation of light degree of light source ejaculation from then on generally has the degree of polarization more than 95%, so roughly rectilinearly polarized light just is incident to 1/2 wavelength plate 10 as LASER Light Source 1.
When the crystal optics axle of 1/2 wavelength plate 10 was spent for setting 0 degree or 90 for respect to the plane of polarization of the straight line polarization of incident, the rectilinearly polarized light that is incident to 1/2 wavelength plate can directly pass through, and can not change plane of polarization.In addition, when the crystal optics axle of 1/2 wavelength plate 10 with respect to the plane of polarization of the straight line polarization of incident for setting 45 for when spending, the rectilinearly polarized light that is incident to 1/2 wavelength plate can be transformed into the rectilinearly polarized lights that plane of polarization only changes 90 degree.When the crystal optics axle of quartzy prism 20a with respect to the plane of polarization of the straight line polarization of incident for setting 45 for when spending, the rectilinearly polarized light that is incident to quartzy prism 20a can be transformed into the light (unpolarizedization) of unpolarized state.
In the present embodiment, when depolarizer 20 was positioned in the illumination path, the crystal optics axle of quartzy prism 20a was to set 45 degree for respect to the plane of polarization of the straight line polarization of incident.In other words, when the crystal optics axle of quartzy prism 20a is when setting 0 degree or 90 for and spending with respect to the plane of polarization of the straight line polarization of incident, the rectilinearly polarized light that is incident to quartzy prism 20a can directly pass through, and can not change plane of polarization.In addition, when the crystal optics axle of 1/2 wavelength plate 10 is to set 22.5 for when spending with respect to the plane of polarization of the straight line polarization of incident, the rectilinearly polarized light that is incident to 1/2 wavelength plate 10 can be converted into the light of unpolarized state, and it comprises that plane of polarization can not change and the straight line polarized component that directly passes through and plane of polarization only change the straight line polarized components of 90 degree.
As mentioned above, in the present embodiment, the rectilinearly polarized light that sends from LASER Light Source 1 is to be incident to 1/2 wavelength plate 10.But in order to simplify the following description, the light of P polarization (among Fig. 1, on the position of 1/2 wavelength plate, having the straight line polarization of plane of polarization in the Z direction, hereinafter referred to as Z direction polarization) incides 1/2 wavelength plate 10.When being positioned at depolarizer 20 in the illumination path, the crystal optics axle of 1/2 wavelength plate 10 is set to 0 degree or 90 when spending with respect to the plane of polarization angulation of incident P polarization (Z direction polarization), the light that incides the P polarization (Z direction polarization) of 1/2 wavelength plate 10 can directly pass through, and do not change its plane of polarization, reenter and be incident upon quartzy prism 20a.Because the crystal optics axle of quartzy prism 20a is set to 45 degree with respect to the plane of polarization angulation of incident P polarization (Z direction polarization), the light that is incident to the P polarization (Z direction polarization) of quartzy prism 20a can be changed into the light of unpolarized state.Through quartzy prism 20a and, through being used for compensating the quartz prism 20b as compensator of light direct of travel, with the unpolarized state light shield M (and then wafer W) that throws light on by the light of unpolarizedization.On the other hand, when the crystal optics axle of 1/2 wavelength plate 10 is set to 45 when spending with respect to the plane of polarization angulation of incident P polarization (Z direction polarization), the polarization surface that incides the P polarization (Z direction polarization) of 1/2 wavelength plate 10 can change 90 degree, and become the S polarization (among Fig. 1, on 1/2 wavelength plate position, have the straight line polarization of plane of polarization in directions X, hereinafter referred to as the X polarization) light, reenter and be incident upon quartzy prism 20a.Because the crystal optics axle of quartzy prism 20a is set to 45 degree with respect to the plane of polarization angulation of incident S polarization (directions X polarization), the light that is incident to the S polarization (directions X polarization) of quartzy prism 20a can be changed into the light of unpolarized state.Through quartz prism 20b, with the unpolarized state light shield M that throws light on.
Relatively, make under the situation that polarizer 20 keeps out of the way from illumination path, when the crystal optics axle of 1/2 wavelength plate 10 is set to 0 degree or 90 when spending with respect to the plane of polarization angulation of incident P polarization (Z direction polarization), the light that incides the P polarization (Z direction polarization) of 1/2 wavelength plate 10 can directly pass through, and do not change its plane of polarization, and with the light of P polarization (Z direction polarization) the state light shield M that throws light on.On the other hand, when the crystal optics axle of 1/2 wavelength plate 10 is set to 45 when spending with respect to the plane of polarization angulation of incident P polarization (Z direction polarization), the polarization surface that incides the P polarization (Z direction polarization) of 1/2 wavelength plate 10 can change 90 degree, and become the S polarization, and with the light of S polarization (directions X polarization) the state light shield M that throws light on.
As mentioned above, in the present embodiment, locate by depolarizer 20 is inserted illumination paths, light shield M can unpolarized state throws light on.In addition, by making depolarizer 20 keep out of the way and the crystal optics axle of 1/2 wavelength plate 10 is set to 0 degree or 90 degree with respect to the plane of polarization angulation of incident P polarization (Z direction polarization) from illumination path, can P polarization (Z direction polarization).Moreover, keep out of the way and the crystal optics axle of 1/2 wavelength plate 10 is set to 45 degree with respect to the plane of polarization angulation of incident P polarization (Z direction polarization) from illumination path by making depolarizer 20, just can S polarization (directions X polarization) state, light shield M throws light on.
In other words, in the present embodiment, the effect of the polarization state switch means that is constituted by 1/2 wavelength plate 10 and depolarizer 20, the polarized state of light that throws light on as the light shield M (or wafer W) of plane of illumination just can switch between straight line polarization state and unpolarized state.When throwing light on, can between P light state and S polarization state, (between the mutually perpendicular polarization state) switch mutually with rectilinearly polarized light.Therefore in the present embodiment, because the pattern properties in response to light shield M suppresses light loss, and make the illumination polarized state of light change the appropriate illumination condition that realizes, so the appropriate illumination condition that can realize according to the pattern properties of light shield M is carried out excellent exposure.Particularly, when throwing light on, do not have in fact under the light loss, can direct into plane of illumination from the straight line polarization of light source 1 at polarization state switch means place with rectilinearly polarized light.
Particularly, for example by being set in directions X two utmost points illuminations, and on light shield M along directions X, with the light of straight line polarization state with plane of polarization light shield M that throws light on, the critical layer on wafer W can verily expose along the minimum pattern of the live width of directions X.Then, for example by switching to the illumination of Y direction two utmost points, and come light shield M illumination with the light that has the straight line polarization state of plane of polarization on the Y direction of light shield M upper edge, the same critical layer on wafer W can verily expose along the minimum pattern of the live width of directions X.
Then, after the double exposure of critical layer finishes, for example still with two utmost point lighting systems, or switch to quadrupole illuminating or take turns band illumination or circular illumination, and with the light of the unpolarized state light shield M that throws light on, the two-dimensional pattern of the live width broad of the non-critical layer (middle layer or rough layer (rough layer)) on the wafer W can high yield expose.But this is an example.Generally speaking, set the suitable shape or the size of secondary souce, and the light settings of the light shield M that will throw light on becomes suitable polarization state, just can the appropriate illumination condition carry out excellent exposure by the characteristic of foundation light shield M.
In fact, in the situation that the oblique incidence of P polarization light is arrived wafer W to situation and the oblique incidence of S polarization light of wafer W, the scattering on formed photoresist layer surface is inequality on wafer W.Particularly, S polarization person can have higher reflectivity than P polarization, so the P polarization can more can reach the inside of photoresist layer deeply than S polarization.Utilize this P polarization and S polarization optics property difference,, the illumination polarized state of light is changed,, just can the appropriate illumination condition carry out excellent exposure to realize the appropriate illumination condition in response to the pattern properties of light shield M with respect to photoresist layer.
In addition, in the above-described embodiments, as making 1/2 wavelength plate 10 of the phase place portion material that the plane of polarization of the rectilinearly polarized light line of incident changes in response to needs is to be configured in light source side, is to be configured in the light shield side as making the rectilinearly polarized light line of incident become unpolarized depolarizer 20 in response to needs.But, be not limited to this mode, depolarizer 20 is configured in light source side and 1/2 wavelength plate 10 is configured in the light shield side also identical optical effect and effect can be obtained.
Moreover, in the foregoing description, be to use quartz prism 20b as the compensator that is used for compensating through the direct of travel of the light of quartzy prism 20a.But, be not to be only limited to this mode.Optical material for the high-durability of KrF excimer laser or ArF excimer laser as formed wedge type prisms such as crystal or fluorites, also can be used for as compensator.This also is identical for other relevant variation example.
Fig. 5 is a structural representation of drawing the polarization state switch means of the first variation example.Fig. 5 first changes the polarization switch means shown in the example, has similar structure with the polarization switch means shown in Fig. 4 embodiment.But, with respect to the depolarizer 20 of Fig. 4 is to be configured to can freely insert and break away from illumination path, and in first variation of Fig. 5, the quartzy prism 20a that constitutes depolarizer 20 and quartz prism 20b be configured to can be integratedly be center and freely rotating with optical axis AX.And the crystal optics axle of quartzy prism 20a is center and rotation freely is basically a discrepancy with optical axis AX.Then, focus on the discrepancy with Fig. 4 embodiment, the variation example of Fig. 5 is described.
Change in the example the 1st, when the crystal optics axle of 1/2 wavelength plate 10 is to be positioned in 0 degree or 90 degree with respect to the plane of polarization angulation of the P polarization (Z direction polarization) of incident, the light that incides the P polarization (Z direction polarization) of 1/2 wavelength plate 10 can't change its plane of polarization, directly pass through with P polarization (Z direction polarization), and be incident to quartzy prism 20a.At this moment, when the crystal optics axle of quartzy prism 20a is to be set at 45 degree with respect to the plane of polarization angulation of the P polarization (Z direction polarization) of incident, the light that incides the P polarization (Z direction polarization) of quartzy prism 20a is converted into unpolarized state, and via quartz prism 20b, with the unpolarized state light shield M that throws light on.In addition, when the crystal optics axle of quartzy prism 20a is to be set at 0 degree or 90 degree with respect to the plane of polarization angulation of the P polarization (Z direction polarization) of incident, the light that incides the P polarization (Z direction polarization) of quartzy prism 20a can't change its plane of polarization, directly pass through with P polarization (Z direction polarization), and via quartz prism 20b, with P polarization (Y direction polarization) the state light shield M that throws light on.
On the other hand, when the crystal optics axle of 1/2 wavelength plate 10 is to be set at 45 degree with respect to the plane of polarization angulation of the P polarization (Z direction polarization) of incident, the light that incides the P polarization (Z direction polarization) of 1/2 wavelength plate 10 can only change 90 degree, and become the light of S polarization (directions X polarization), reenter and be mapped to quartzy prism 20a.At this moment, when the crystal optics axle of quartzy prism 20a is to be set at 45 degree with respect to the plane of polarization angulation of the P polarization (Z direction polarization) of incident, the light that incides the S polarization (directions X polarization) of quartzy prism 20a is converted into unpolarized state, and via quartz prism 20b, with the unpolarized state light shield M that throws light on.In addition, when the crystal optics axle of quartzy prism 20a is to be set at 0 degree or 90 degree with respect to the plane of polarization angulation of the S polarization (directions X polarization) of incident, the light that incides the S polarization (directions X polarization) of quartzy prism 20a can't change its plane of polarization, directly pass through with S polarization (directions X polarization), and via quartz prism 20b, with S polarization (directions X polarization) the state light shield M that throws light on.
As previously discussed, change in the example at first of Fig. 5, utilize around the rotation of the optical axis AX of 1/2 wavelength plate 10 and around the rotation of the optical axis AX of quartzy prism 20a, the polarized state of light of the light shield that is used for throwing light on just can switch between straight line polarization state and unpolarized state.When the situation of throwing light on, can between P polarization state and S polarization state, switch with rectilinearly polarized light.In addition, first of Fig. 5 changes in the example and also 1/2 wavelength plate 10 is configured in light source side and depolarizer 20 is configured in the light shield side, also can obtain identical optical effect and effect but depolarizer 20 is configured in light source side and will disposes 1/2 wavelength plate 10 in the light shield side.
Fig. 6 is the structural representation that illustrates the polarization switch means of the second variation example.Second of Fig. 6 changes the polarization switch means shown in the example, has the structure of the polarization switch means that is similar to Fig. 4 embodiment.But in the embodiment of Fig. 4, depolarizer 20 is to be configured to insert to break away from illumination path comfortablely, and with respect to this, the second variation example shown in Figure 6 is that depolarizer 20 is positioned in the illumination path in the fixed mode of event.This point is a difference basically.Then, just focus on the discrepancy with Fig. 4 embodiment, illustrate that second of Fig. 6 changes example.
Change in the example second, the plane of polarization angulation of the P polarization with respect to incident of quartzy prism 20a crystal optics axle (Z direction polarization) is to be positioned in 0 degree or 90 degree.Therefore, when the crystal optics axle of 1/2 wavelength plate 10 is to be positioned in 0 degree or 90 degree with respect to the plane of polarization angulation of the P polarization (Z direction polarization) of incident, the light that incides the P polarization (Z direction polarization) of 1/2 wavelength plate 10 can't change its plane of polarization, directly pass through with P polarization (Z direction polarization), and be incident to quartzy prism 20a.Because the crystal optics axle of quartzy prism 20a is to be positioned in 0 degree or 90 degree with respect to the plane of polarization angulation of the P polarization (Z direction polarization) of incident, the light that incides the P polarization (Z direction polarization) of quartzy prism 2 0a can't change its plane of polarization, directly pass through with P polarization (Z direction polarization), and via quartz prism 20b, with P polarization (Y direction polarization) the state light shield M that throws light on.
In addition, when the crystal optics axle of 1/2 wavelength plate 10 is to be set in 45 degree with respect to the plane of polarization angulation of the P polarization (Z direction polarization) of incident, incide the light of the P polarization (Z direction polarization) of quartzy prism 20a, plane of polarization only changes 90 degree, and become S polarization (directions X polarization), reenter and be incident upon quartzy prism 20a.Because the crystal optics axle of quartzy prism 20a be the plane of polarization of S polarization (directions X polarization) with respect to incident and be positioned in 0 the degree or 90 the degree angles, so being incident to the polarization surface of the S polarization (directions X polarization) of quartzy prism 20a can't change, directly pass through with S polarization (directions X polarization), via quartz prism 20b, with the state of the S polarization light shield M that throws light on.
Moreover, when the crystal optics axle of 1/2 wavelength plate 10 is to be set in 22.5 degree with respect to the plane of polarization angulation of the P polarization (Z direction polarization) of incident, as previously mentioned, the light that incides the P polarization (Z direction polarization) of 1/2 wavelength plate 10 can't change plane of polarization, comprise S polarization (directions X polarization) compositions that P polarization (Z direction polarization) composition that its state directly passes through and plane of polarization change 90 degree, convert unpolarized state to, reenter and be incident upon quartzy prism 20a.Because the crystal optics axle of quartzy prism 10a is the angle that is positioned in 0 degree or 90 with respect to the plane of polarization of the P polarized component of incident, so being incident to P polarization (Z direction polarization) composition and S polarization (directions X polarization) composition of quartzy prism 20a can not change plane of polarization yet and directly pass through, through quartz prism 20b, with the unpolarized state light shield M that throws light on.
As previously discussed, change in the example at second of Fig. 6, utilization is at the state that depolarizer 20 is positioned at regularly in the illumination path, 1/2 wavelength plate 10 is suitably rotated around optical axis AX, and the polarized state of light of the light shield that is used for throwing light on just can switch between straight line polarization state and unpolarized state.When the situation of throwing light on, can between P polarization state and S polarization state, switch with rectilinearly polarized light.In addition, second of Fig. 6 changes in the example and also 1/2 wavelength plate 10 is configured in light source side and depolarizer 20 is configured in the light shield side, also can obtain identical optical effect and effect but depolarizer 20 is configured in light source side and will disposes 1/2 wavelength plate 10 in the light shield side.
Fig. 7 is the structural representation that illustrates the polarization switch means of the 3rd variation example.The 3rd of Fig. 7 changes the polarization switch means shown in the example, has to be similar to the structure that Fig. 5 first changes the polarization switch means of example.But, changing in the example at first of Fig. 5, the polarization switch means is to be made of with depolarizer 20 1/2 wavelength plate 10; With respect to this, in the 3rd variation example shown in Figure 7, only by being constituted by the depolarizer that the center freely rotates by optical axis AX, this point is a difference basically to the polarization state switch means.Then, just focus on the discrepancy that changes example with Fig. 5 first, illustrate that the 3rd of Fig. 7 changes example.
Change in the example the 3rd, when the crystal optics axle of quartzy prism 20a is the angles that are configured to 45 degree with respect to the plane of polarization of the P polarization (Z direction polarization) of incident, the P polarization that incides quartzy prism 20a just is altered to unpolarized state, again via quartz prism 20b, with the unpolarized state light shield M that throws light on.On the other hand, when the plane of polarization with respect to incident P polarization (Z direction polarization) of quartzy prism 20a crystal optics axle is the angles that are set to 0 degree or 90 degree, the light that incides the P polarization (Z direction polarization) of quartzy prism 20a can't change plane of polarization, directly pass through with P polarization (Z direction polarization), via quartz prism 20b, light shield M throws light on P polarization state (Z direction polarization) again.
As mentioned above, Fig. 7 the 3rd changes in the example, utilizes to allow quartzy prism 20a do suitable rotation around optical axis AX, and the polarized state of light of illumination light shield M just can switch between straight line polarization state and unpolarized state.In addition, change in the example at Fig. 7 the 3rd, depolarizer 20 is to be configured to around optical axis AX freely to rotate and can freely insert and break away from illumination path, keep out of the way from illumination path by making depolarizer 20, even set for the P polarization light shield M that throws light on, also can obtain identical optical effect and effect.
Fig. 8 changes the synoptic diagram of routine framework for depolarizer.Change in the example at the foregoing description and first to the 3rd, depolarizer 20 has the structure of quartzy prism 20a for adopting, but changes shown in the example as Fig. 8, can be polarizing beam splitter 21a and the reflecting system (depolarizer 21 of 21b～21e) constituted.With reference to shown in Figure 8, depolarizer 21 possesses the polarizing beam splitter 21a that is configured in the illumination path.Be incident in the light of polarizing beam splitter 21a, with respect to the polarization separation face of polarizing beam splitter 21a, P polarized light (in the drawings, its polarization direction is represented with double-head arrow) can penetrate polarizing beam splitter 21a.
On the other hand, polarization separation face with respect to polarizing beam splitter 21a, the S polarized light (in the drawings, its polarization direction is represented to put) be polarized optical splitter 21a reflection after, the effect of the convenient reflecting system that is constituted with four catoptron 21b～21e, on the plane that is parallel to Fig. 8 drawing, be reflected four times, and get back to polarizing beam splitter 21a.At this, (21b～21e) is configured to the light path that makes the P polarized light that passes polarizing beam splitter 21a and is polarized optical splitter 21a that to do the light path of S polarized light of last reflection consistent haply to reflecting system.So, pass the P polarized light of polarizing beam splitter 21a and be polarized the S polarized light that optical splitter 21a does last reflection and can be penetrated from depolarizer 21 along same light path roughly.But the S polarized light can be delayed the reflecting system (optical path length of 21b～21e) with respect to the P polarized light.
(depolarizer 21 of 21b～21e) constituted is the optical effect that has equivalence with the depolarizer 20 that is made of quartzy prism 20a and quartz prism 20b basically for polarizing beam splitter 21a and reflecting system.Therefore, embodiment and first to the 3rd device 20 that depolarizes that the changes example device 21 that depolarizes that can Fig. 8 changes example is changed.In other words, when the device 21 that will depolarize was applied to the situation of Fig. 4 embodiment, (21b～21e) was that be configured to can be integratedly and comfortablely insert and break away from illumination path for polarizing beam splitter 21a and reflecting system.
In addition, when depolarizer 21 is applied to Fig. 5 first and changes example or Fig. 7 the 3rd and change the situation of example, polarizing beam splitter 21a and reflecting system (21b～21e) be configured to can be integratedly be that the center is done freely and rotated with optical axis AX.Moreover when depolarizer 21 was applied to Fig. 6 second and changes the situation of example, (21b～21e) was to be fixedly positioned in the illumination path for polarizing beam splitter 21a and reflecting system.
Change in the depolarizer 21 of example at Fig. 8, by with reflecting system (optical path length of 21b～21e) substantially be set for greater than illumination light (exposure light) but interference distance, the same tone (interference capability) of the laser light that reduces illumination light shield M can be reached, and then the spectrum contrast that is reduced on the wafer W can be reached.In addition, possess polarizing beam splitter and reflecting system, can be applicable to the detailed construction of the device that depolarizes of the present invention variations examples various with it, can reference example such as the spy open that flat 11-174365 communique, spy are opened flat 11-312631 communique, the spy opens 2000-223396 communique etc.
Fig. 9 illustrates light mediation unit (beam matching unit, internal structure synoptic diagram BMU) that is disposed among Fig. 1 between light source and the polarization state switch means.As shown in Figure 9, light is in harmonious proportion among the unit MBU, the directional light that LASER Light Source 1 (for example KrF quasi-molecule laser source or ArF quasi-molecule laser source) is supplied, through the drift angle prism to 31 with parallel panel 32 after, be incident to light diffuser 2.LASER Light Source 1 is arranged on the base plate A of lower floor for example.
At this, the drift angle prism is to having at least in 31 one to be that to be configured to optical axis AX to be that the center rotates freely.Therefore, by making the drift angle prism do relative rotation around optical axis AX, just can adjust angle with respect to the parallel beam of optical axis AX to 31.That is the drift angle prism is to be configured to beam angle to adjust means to 31, is used for adjusting the angle with respect to optical axis AX of LASER Light Source 1 parallel beam of supplying.In addition, parallel panel 32 is to be configured on the face perpendicular to optical axis AX, can do rotation around two vertical axis.
Therefore, by making parallel panel 32 around each axis rotation, make to favour optical axis AX, parallel beam just can be done parallel moving with respect to optical axis AX.That is parallel panel 32 is to be configured to the parallel beam mobile means, and the parallel beam that is used for LASER Light Source 1 is provided is done parallel moving with respect to optical axis AX.So, by the drift angle prism to 31 with the parallel beam that is sent from LASER Light Source 1 of parallel panel 32, through light diffuser 2, extended be shaped to parallel beam with predetermined section shape after, just be incident to first right-angle prism 33.
Utilization is as first right-angle prism 33 of back reflector and be partial to the parallel beam of vertical direction, after being reflected in regular turn by same second right-angle prism, 34 to the 5th right-angle prisms 37 as back reflector, just pass through the peristome of upper strata base plate B, and incide the 6th right-angle prism 38.As shown in Figure 9, second right-angle prism to the, five right-angle prisms 37 are to be configured to make be partial to vertical direction by first right-angle prism 33 and toward the parallel beam of the 6th right-angle prism, make a circulation in as the pipe arrangement 39 of the pipe arrangement of supply pure water and ventilation usefulness etc.
Be partial to light beam as the 6th right-angle prism 38 of back reflector, be incident to half-reflecting mirror 40 to horizontal direction.Reflected 40 beam reflected by half-reflecting mirror, can be led to offset tilt detection system 41.On the other hand, the light beam that passes half-reflecting mirror 40 can be led to the polarization state switch means 42 that is made of 1/2 wavelength plate 10 and depolarizer 20.In offset tilt detection system 41, offset and the inclination with respect to optical axis AX of inciding the parallel beam (being incident to the diffraction optics assembly 4 as light integrators) of polarization state switch means 42 can be detected.
At this, when using ArF quasi-molecule laser source for example as the situation of LASER Light Source 1, generally speaking, bear the light-struck smooth breakthrough portion of high-energy-density material is to use fluorite, to guarantee required persistence.In this situation, as described later, when passing the light breakthrough portion material that forms with fluorite, the plane of polarization of straight line polarization has short-term and long-term variation.Through the light breakthrough portion material that forms with fluorite, when the plane of polarization of straight line polarization changed, quartzy prism 20a might lose the function as unpolarizedization assembly.
Figure 10 is the key diagram about the crystal orientation of fluorite.With reference to shown in Figure 10, the crystal orientation of fluorite is the crystallographic axis a according to cubic system 1a 2a 3Define.That is, along crystallographic axis+a 1Be to be defined as crystal orientation [100], along crystallographic axis+a 2Be to be defined as crystal orientation [010], along crystallographic axis+a 3Be to be defined as crystal orientation [001].In addition, a 1a 3The plane is to be defined as the crystal orientation [101] that becomes 45 degree directions with crystal orientation [100] with crystal orientation [001], a 1a 2The plane is to be defined as the crystal orientation [110] that becomes 45 degree directions with crystal orientation [100] with crystal orientation [010], a 2a 3The plane is to be defined as the crystal orientation [011] that becomes 45 degree directions with crystal orientation [010] with crystal orientation [001].Secondly, with crystallographic axis+a 1, crystallographic axis+a 2With crystallographic axis+a 3Become to equate that the acute angle direction is to be defined as crystal orientation [111].In Figure 10, have only by crystallographic axis+a 1, crystallographic axis+a 2With crystallographic axis+a 3The crystal orientation in the space that crosses that defines is drawn, but also can define identical crystal orientation in other space.
Checking according to this case inventor, in the material of the formed smooth breakthrough portion of fluorite, the direct of travel of light if with crystal orientation [111] or therewith the orientation be that the crystal orientation of crystalline texture equivalence is consistent, see through this light breakthrough portion material, the plane of polarization of straight line polarization substantially can not change.Similarly, the direct of travel of light if with crystal orientation [100] or therewith the orientation be that the crystal orientation of crystalline texture equivalence is consistent, see through the light breakthrough portion material that forms with fluorite, the plane of polarization of straight line polarization substantially can not change.On the contrary, the direct of travel of light if with crystal orientation [110] or therewith the orientation be that the crystal orientation of crystalline texture equivalence is consistent, see through the light breakthrough portion material that forms with fluorite, the plane of polarization of straight line polarization has short-term and long-term variation.
In addition, in this manual, so-called " with certain crystal orientation be the crystal orientation of crystalline texture equivalence ", be with respect to certain crystal orientation, replace the crystal orientation of order of the index of this crystal orientation, and the crystal orientation of at least a portion of each index being done sign-inverted.For example when certain crystal orientation is the situation of [uvw], [uwv], [vuw] [vwu] [wuv] [wvu] [uvw], [uwv], [vuw], [vwu], [wuv], [wvu], [u-vw], [u-wv], [v-uw], [v-wu], [w-uv], [w-vu], [uv-w], [uw-v], [vu-w], [vw-u], [wu-v], [wv-u], [u-vw], [u-wv], [wu-v], [wv-u], [u-vw], [u-wv], [uv-w], [uw-v], [v-uw], [v-wu], [vu-w], [vw-u], [w-uv], [w-vu], [wu-v], [wv-u], [u-v-w], [u-w-v], [u-w-v], [v-u-w], [v-w-u], [w-u-v], [w-v-u], [u-v-w], [u-w-v], [v-u-w], [v-w-u], [w-u-v], [w-v-u] etc. is the crystal orientation of equivalence on the crystalline texture.In addition, crystal orientation [uvw] and be with crystal orientation＜uvw for equivalent crystal orientation on the crystalline texture therewith represent.In addition, perpendicular to crystal orientation [uvw] and be the face of equivalent crystal orientation on the crystalline texture therewith, that is crystal plane (uvw) and be so that { uvw} represents for equivalent crystal plane on the crystalline texture therewith.
Again in the present embodiment, be configured in the light path between LASER Light Source 1 and the polarization switch means 42 and with in the material of the formed smooth breakthrough portion of fluorite, the direct of travel of light is to be set to than crystal orientation＜110〉nearer crystal orientation＜111〉or crystal orientation＜100.Specifically, to constitute the lens composition (2a of light diffuser 2, mode 2b), and when being positioned optic material in the light path regularly and being the situation that forms with fluorite, the optical axis of its optic material is to set for and crystal orientation＜111〉or crystal orientation＜100 consistent in fact.
In this situation, because laser light is haply along crystal orientation＜111〉or crystal orientation＜100 pass, (2a, the plane of polarization of straight line polarization 2b) are substantially and no change so pass the lens composition.In the same manner, when the drift angle prism also formed with fluorite 31, its optical axis also was to set for haply and crystal orientation＜111〉or crystal orientation＜100 consistent, use and substantially can avoid the plane of polarization of the straight line polarization that passes to change.
In addition, when the right-angle prism 33 to 38 as back reflector is when forming with fluorite, the plane of incidence of right-angle prism 33 to 38 and exit facet are to set haply that { 100} is consistent, and the reflecting surface of right-angle prism 33 to 38 is to set that { 110} is consistent with crystal plane haply for crystal plane for.In this situation, because laser light is haply along crystal orientation＜100〉pass, substantially there is no change so pass the plane of polarization of the straight line polarization of right-angle prism 33 to 38.
In addition, can tilt and make along the parallel mobile parallel panel 32 as the parallel beam mobile means of the light of optical axis AX incident with respect to optical axis AX in being provided in light path be when forming with fluorite, and the optical axis of parallel panel 32 is to set for haply and crystal orientation＜100〉consistent.This is with respect to crystal orientation＜111〉and crystal orientation＜110 into about 35 angles of spending, crystal orientation＜100 and crystal orientation＜110 45 angles of spending can be become.
The optical axis that makes parallel panel 32 roughly with crystal orientation＜111 consistent words, even also its optical surface and the crystal plane { words that 111} is consistent haply, when making parallel panel 32 with (for example 30 degree) to greatest extent when tilting with respect to optical axis AX, the direct of travel by its inner laser light can become in crystal orientation＜110〉near.Therefore, make the optical axis and crystal orientation＜100 of parallel panel 32〉consistent haply words, even that is also it optical surface and crystal plane 100} is consistent haply, and can guarantee by its inner laser light direct of travel can with crystal orientation＜110 released state on certain degree arranged.Therefore, by optical axis that makes parallel panel 32 and crystal orientation＜100〉consistent haply, posture that let it be is how, and the plane of polarization that can avoid passing the straight line polarization of parallel panel 32 changes.
In addition, in the above description, avoided owing to be passed in the change of plane of polarization of the straight line polarization of the light breakthrough portion material that is disposed in the light path of 42 of LASER Light Source 1 and polarization switch means, the light direct of travel is to set for than crystal orientation＜110〉nearlyer crystal orientation＜111〉or＜100.But, not limited thereto, light breakthrough portion material for being disposed in the light path between the light shield M (and then wafer W) of polarization switch means 42 and plane of illumination also can carry out identical setting, uses avoidance and changes across the plane of polarization of whole illumination path because of the straight line polarization that fluorite caused.
In addition, in the above description, change and avoided because pass plane of polarization with the straight line polarization of the formed smooth breakthrough portion of fluorite material, the direct of travel of light is to set for than crystal orientation＜110〉nearlyer crystal orientation＜111〉or crystal orientation＜100.But be not limited to fluorite,, also can avoid the plane of polarization of the straight line polarization that causes because of this crystalline material to change for example by the light breakthrough portion material that crystalline material was constituted with cubic systems such as calcium fluoride, barium fluoride, magnesium fluorides is carried out identical setting.
At this, as shown in Figure 9, most (example shown in Figure 9 is 6) right-angle prisms 3 3～38 are configured among the Beam matching unit B MU.In general, LASER Light Source 1 is no matter be KrF quasi-molecule laser source or ArF quasi-molecule laser source, under the straight line polarization incides situation as the right-angle prism of back reflector, (plane of polarization of incident is not for reflecting surface if having the words consistent with P plane of polarization or S plane of polarization for the plane of polarization of the straight line polarization of incident, neither the P polarization neither the S polarization), make the straight line polarization become elliptic polarization in the total reflection meeting of right-angle prism.In the polarization state switch means 42 of present embodiment is as prerequisite, during elliptic polarization incident and can't reach desired effect with the incident of straight line polarization.
In the present embodiment, as shown in figure 11, be transformed into the second phase place portion material of rectilinearly polarized light as elliptically polarized light with incident, preferably for example the crystallization optical axis is 1/4 wavelength plate 11 that the center can rotate freely with optical axis AX, is arranged on the light source side (left side of drawing) of 1/2 wavelength plate 10 in the polarization state switch means 42.In this situation, even because cause as right-angle prism, elliptic polarization is incided in the polarization state switch means 42, characteristic in response to the elliptic polarization of incident, set the crystal optics axle of 1/2 wavelength plate 11, make the straight line polarization incide 1/2 wavelength plate by this, and be maintained the action of the script of polarization state switch means 42.In addition, among Figure 11,, also 1/4 wavelength plate 11 can be configured in the light shield side (figure right side of face) of 1/2 wavelength plate 10 though dispose 1/4 wavelength plate in the light source side of 1/2 wavelength plate 10.
In addition, in the above description, penetrate the avoidance method that the plane of polarization with the straight line polarization of the formed smooth breakthrough portion of fluorite material changes, even and the elliptic polarization incident that causes because of right-angle prism also can keep the method for the script effect of polarization state switch means, also can be applied among the embodiment of Fig. 1 to Fig. 4.But, and portion is defined in this, the variation example of Fig. 5 to Fig. 8 also can be suitable for the method.
In addition, in the above description, change (change of polarization state), just carry out the setting of the crystal orientation of this crystalline material for fear of the plane of polarization of the straight line polarization of the formed smooth breakthrough portion of the cubic system material that passes fluorite etc.Be used for replacing said method or merge use with said method, can use (or No. 02/16993 communique of WO) disclosed method for example U.S. Patent Publication US2002/0163741A number, dynamically keep the formed smooth breakthrough portion of the crystalline material material of cubic system.By this, when the light of high-energy-density passes through by the formed smooth breakthrough portion of cubic systems such as fluorite material, even the expansion or the contraction of the light breakthrough portion material that causes because of heat, also can suppress the generation of the stress birefrin that this light breakthrough portion material produces, the plane of polarization that also can suppress to pass the straight line polarization of this light breakthrough portion material changes (change of polarization state).
Then, particularly, utilize for which type of mask pattern, the light shield that throw light on the light of which type of polarization state illustrates the imaging performance (depth of focus and resolution etc.) that makes projection optical system and promotes, and can carry out good and loyal transfer printing.At first, for example the illumination of two utmost points (generally speaking, be formed on pupil face or near the lighting system it across at interval two highlight strength branch zones) situation the time, as shown in figure 14, spacing direction (the x direction: the directions X on the corresponding light shield) of formed line and space pattern (line and spacepattern) 141 on the light shield, formation is every at interval two area source 142a and a 142b, with two area source 142a, the direction of 142b separation (x direction: vertical direction (y direction: the Z direction on the corresponding pupil face) directions X on the corresponding pupil face), with the light of the straight line polarization state light shield that throws light on plane of polarization (representing with four-headed arrow F1 on the drawing), can promote the imaging capability of projection optical system to mask pattern 141.That is to say, the two-dimensional pattern that mixes for longitudinal direction pattern and transverse direction pattern, for example with the light of the unpolarized state light shield that throws light on, it is unusual can not live width to take place between longitudinal direction pattern and transverse direction pattern, and can carry out the pattern transfer of high yield.
Particularly, in above-mentioned two utmost points illumination, in the lifting of the imaging performance of seeking projection optical system, two area source 142a, 142b are symmetrical in optical axis AX to form, and wish to satisfy following conditional (1).
0.7≤σo/φp (1)
In conditional (1), σ o is the value (common name outside σ) that is defined as φ o/ φ p.At this, as shown in figure 14, φ o is for being the center with optical axis AX, and with the external diameter of a circle of two area source 142a and 142b, φ p is the diameter of pupil face 143.In addition, for the imaging capability of plot projection optical system promotes more, the lower limit of conditional (1) preferably is set in 0.9.
In addition, in above-mentioned two utmost points illumination, in the lifting of the imaging performance of seeking projection optical system, two area source 142a, 142b are symmetrical in optical axis AX to form, and wish to satisfy following conditional (2).
0.5≤σi/σo (2)
In conditional (1), σ i is the value (being generally called inboard σ) that is defined as φ i/ φ p.σ o is the above-mentioned outside σ that is defined as φ o/ φ p.At this, as shown in figure 14, φ i is for being the center with optical axis AX, and with the diameter of the inscribed circle of two area source 142a and 142b, φ p is the diameter of pupil face 143.In addition, for the imaging capability of plot projection optical system promotes more, the lower limit of conditional (2) preferably is set in 0.67 (about 2/3).
Then, for example circular illumination (generally speaking, be that to show optical axis greatly be that the highlight strength branch zone at center is formed on pupil face or near the lighting system it) situation the time, use the phase shift light shield and as shown in figure 15 as light shield, with the spacing direction of formed line on the phase shift light shield and space pattern (line and spacepattern) 151 (x direction: vertical direction (y direction: the Z direction on the corresponding pupil face) directions X on the corresponding light shield), with the light of the straight line polarization state light shield that throws light on plane of polarization (representing with four-headed arrow F2 on the drawing), can promote the imaging capability of projection optical system to mask pattern 151.That is to say, the circular illumination also situation with the illumination of two utmost points is identical, the two-dimensional pattern that mixes for longitudinal direction pattern and transverse direction pattern, for example with the light of the unpolarized state light shield that throws light on, it is unusual can not live width to take place between longitudinal direction pattern and transverse direction pattern, and can carry out the pattern transfer of high yield.
Particularly, in above-mentioned circular illumination, in the abundant lifting of the imaging performance of plot projection optical system, hope can be satisfied following conditional (3).
σ≤0.4 (3)
In conditional (3), σ is the value (common name σ value) that is defined as φ/φ p.Shown in Fig. 15, φ is the diameter (generally speaking, the size in the zone of a highlight strength distribution) of circular face light source 152, and φ p is the diameter of above-mentioned pupil face 153.In addition, in the lifting of the imaging performance of seeking projection optical system more, hope can be set in 0.3 with the higher limit of conditional (3).
Then, the condition that the light of the unpolarized state of the straight line polarization state of essence among the present invention or essence should satisfy is described.At first, in the present invention, the S1 composition that is considered to the Stoker parameter of the light of straight line polarization in fact (Stokes ' parameter) preferably satisfies following conditional (4).
0.6≤|?S1?| (4)
In addition, in the present invention, the S1 and the S2 composition that are considered to the Stoker parameter (Stokes ' parameter) of the light of unpolarized in fact state preferably satisfy following conditional (5) and (6).
|S1|≤0.1 (5)
|S2|≤0.1 (6)
In addition, in fact the light of straight line polarization state for more near the straight line polarization, so the lower limit of conditional (4) preferably more is set in 0.8.For example, light source is with the ArF excimer laser of the light of supply wavelength 193nm, and the numerical aperture in the imaging side of projection optical system PL is 0.92 o'clock, use the line of 65nm and 6% half accent cross mark (half tone reticle of space pattern, light shield error 2 ± nm), and in the illumination of two utmost points shown in Fig. 14, σ o is set at 0.93 and σ i when being set at 0.73 (that is the σ of each area source is set at 0.2), if exposure error is 2%, linewidth error is ± 10% o'clock, depth of focus DOF (166nm) in the time of can be with unpolarized state, the depth of focus DOF (202nm) that rises at the longitudinal direction pattern.In addition, surpass at 0.8 o'clock in conditional (4) that is degree of polarization value, degree of polarization changes the line width variation that is caused and substantially can ignore.Under these conditions, degree of polarization 0.8 (| S1|=0.8) and degree of polarization 1.0 (| the linewidth difference S1|=1.0) only produces 0.2nm.This difference substantially is negligible.That is to say that about the value of conditional (4), formula is inessential in 0.8 to 1.0 scope.
In addition, more approaching when unpolarized at the nonpolarized light of essence, higher limit the best of the higher limit of conditional (5) and conditional (6) is all to be set in 0.04.At this, conditional (5) and (6), that is the value of degree of polarization is lower than under 0.1 the situation, the linewidth difference that causes because of polarization can be suppressed at 2nm, and (optical source wavelength is 193nm with interior, the imaging side numerical aperture of projection optical system PL is 0.78, use the phase shift light shield of the independent pattern of 5 0nm, and the σ value in circular illumination shown in Figure 15 is set in 0.2 when (little σ illumination)).Then, in conditional (5) and (6), that is the value of degree of polarization is when being lower than 0.04 situation, because of above-mentioned condition can be suppressed in the 0.7nm by the linewidth difference that polarization caused.In addition, in conditional (5) and (6), during regional in microcosmic ground area source, even degree of polarization height, as if polarization state very trickle periodically variable words are arranged in its zone, substantially can regard as unpolarizedly, so the degree of polarization in calculating area source distributes, can use the σ value is the moving average in 0.1 big zone.
Therefore, in for example with circular illumination or the illumination of wheel band etc., the required unpolarized state that residual degree of polarization is very low can't be realized, can produce the linewidth difference of pattern between longitudinal direction and transverse direction.In addition, among for example two utmost point illuminations etc., the straight line polarization state of wanting that has plane of polarization in a predetermined direction can't realize, can can't promote for the imaging performance of the fine pattern of the live width with specific distance.In the variation example of present embodiment, possesses the polarization monitor, to detect the polarized state of light that is used for throwing light on as the light shield M (and even wafer W) of plane of illumination.
Figure 16 is for setting up the configuration diagram of the polarization monitor that is used for detecting the illumination polarized state of light in the exposure device of Fig. 1.Change in the exposure device of example at Figure 16, the framework between microlens array 8 and light shield M is inequality with the exposure device of Fig. 1.In other words, in changing example, the secondary souce that forms on the back focal plane of microlens array 8 (generally speaking, in the pupil face of illumination optical apparatus or near formed predetermined light intensity distribution it) light beam that sent, after through optical splitter 51 and Focused Optical system 9a, light shield plate washer MB overlappingly can throw light on.
So, the rectangle of the shape of each micro lens of correspondence formation microlens array 8 and focal length is according on the wild light shield plate washer MB that just is formed at as illumination visual field aperture.In addition, the internal structure of the polarization monitor 50 of built-in optical splitter 51 and effect can be described below.The light beam of the rectangular aperture portion (light breakthrough portion) of process light shield plate washer MB, after the optically focused effect that is subjected to imaging optical system 9b, just throwing light on is overlappingly forming on the light shield M of predetermined pattern.So, the picture that becomes the rectangular aperture portion of light shield plate washer MB of imaging optical system 9b is formed on the light shield M.
In addition, change in the exposure device of example at Figure 16, the structure between deflection mirror 3 and the diffraction optics assembly 4 is different with the exposure device of Fig. 1.That is, in changing example, dispose the polarization state switch means (1/4 wavelength plate, 11,1/2 wavelength plate 10 and depolarizer 20) of structure shown in Figure 11, with the polarization state switch means (1/2 wavelength plate 10 and depolarizer 20) that replaces Fig. 1.As described later, the output of polarization monitor 50 is to supply to control part 70.In addition, control part 70 drives polarization switch means (11,10,20) via drive system 71.In addition, in the polarization state switch means of structure shown in Figure 11,1/2 wavelength plate 10 can replace with many a slice 1/4 wavelength plates.
Figure 17 is the in-built schematic perspective view of the polarization monitor of Figure 16.With reference to shown in Figure 17, polarization monitor 50 possesses first optical splitter 51, and it is configured in the light path between microlens array 8 and Focused Optical system 9a.First optical splitter 51 for example has parallel panel (that is white glass) form of the non-plated film that constitutes with quartz glass, and has and will capture the function of coming out from light path with the different polarization state reflected light of incident light polarization state.
The light that captures from first optical splitter 51 can incide second optical splitter 52.Identical with first optical splitter 51, second optical splitter 52 for example also has the parallel panel form of the non-plated film that constitutes with quartz glass, and has and produce and the different catoptrical function of polarization state of incident light polarization state.Then, S polarization can be become, and P polarization can be become second optical splitter 52 to the S polarization of first optical splitter 51 to second optical splitter 52 to the P polarization of first optical splitter 51.
In addition, the light that passes second optical splitter 52 is detected by first light intensity detector 53, is then detected by second light intensity detector 54 by the light of second optical splitter, 52 reflections.The output of first light intensity detector 53 and second light intensity detector 54 is sent to control system 70 respectively.In addition, via drive system 71, drive 1/4 wavelength plate, 11,1/2 wavelength plate 10 and depolarizer 20 that constitutes the polarization state switch means according to demand.
As mentioned above, in first optical splitter 51 and second optical splitter 52, substantially be inequality with reflectivity to the S polarization to the reflectivity of P polarization.Therefore, in the polarization monitor 50, about 10% the S polarized component that the reflected light of first optical splitter 51 comprises the incident light of first optical splitter 51 for example (is the S polarized component to first optical splitter 51, to second optical splitter 52 is the P polarized component), and about 1% P polarized component (to first optical splitter 51 is the P polarized component, is the S polarized component to second optical splitter 52) of the incident light of first optical splitter 51 for example.
In addition, the P polarized component that the reflected light of second optical splitter 52 comprises about 10% * 1%=0.1% of the incident light of first optical splitter 51 for example (is the P polarized component to first optical splitter 51, to second optical splitter 52 is the S polarized component), and the S polarized component (to first optical splitter 51 is the S polarized component, is the P polarized component to second optical splitter 52) about 1% * 10%=0.1% of the incident light of first optical splitter 51 for example.
So, in the polarization monitor 50, first optical splitter 51 is just according to its reflection characteristic, has the polarization state reflected light different with the incident light polarization state captured the function of coming out from light path.The result, the polarization influence of change of the polarization characteristic of second optical splitter 52 only has, but the output of foundation first light intensity detector 53 is (about the light intensity information that penetrates of second optical splitter 52, that is about with the light intensity information of the rough same state of polarization of reflected light of first optical splitter 51), just can detect the polarization of incident light state (degree of polarization) of first optical splitter 51 and even to the illumination polarized state of light of light shield M.
In addition, polarization monitor 50 is to set for first optical splitter 51 is the S polarization for the P polarization can become to second optical splitter 52, and first optical splitter 51 is the P polarization for the S polarization can become to second optical splitter 52.The result, according to the output of second light intensity detector 54 (about by first optical splitter 51 and second optical splitter 52 intensity of light reflected information in regular turn), the influence that substantially spreads all over the polarization of incident light state variation that can be subjected to first optical splitter 51 just can detect the light quantity (intensity) of the incident light of first optical splitter 51 and even to the light quantity of the illumination light of light shield M.
So, use polarization monitor 50, just can detect the polarization of incident light state of first optical splitter 51, and then be judged whether the illumination light to light shield M is desired unpolarized state or straight line polarization state.Then, when control system 70 confirms according to the testing result of polarization monitor 50 whether illumination light to light shield M (and even wafer W) is desired unpolarized state or straight line polarization state, drive 1/4 wavelength plate, 11,1/2 wavelength plate 10 and the depolarizer 20 of adjusting formation polarization state switch means via drive system 71, just the illumination light state to light shield M can be adjusted to desired unpolarized state or straight line polarization state.
As mentioned above, polarization monitor 50, control system 70, drive system 71 and polarization state switch means (11,10,20) with the function that is adjusted at the plane of illumination polarization state, be in the light path that is configured between light source 1 and light shield M, to be configured to revise the polarization state change correction means of the polarization state change on light shield M face.In this situation, in the light path between polarization monitor 50 and light shield M, not the polarized state of light of configuration using with the incident of making do not change and the formed optic material of optic material of the characteristic that penetrates as far as possible, for example is the crystal optics material that has the fluorite of birefringent characteristic or have the crystal etc. of optical activity.In addition, in the light path of 1 of polarization monitor 50 and light source preferably also as much as possible the polarized state of light of configuration with the incident of making change and the optic material of the characteristic that penetrates.But, in order to ensure to light-struck persistence, for example the optic material of diffraction optics assembly 4 or 6 etc. being waited when forming with fluorite or crystal, the polarization influence of change that these optic materials are caused is necessary to be considered.
In addition, in the above description, if the reflected light of first optical splitter 51 is the words that are directly incident on first light intensity detector 53, the output of first light intensity detector 53 can't be subjected to the polarization influence of change that polarization characteristic caused of second optical splitter 52, so can detect to pinpoint accuracy the polarization of incident light state of first optical splitter 51.In addition, be not limited to structure shown in Figure 17, the concrete structure of polarization monitor 50 also can have various variation.In addition, in the above description, though the polarization state switch means is constituted with depolarizer 20 with 1/4 wavelength plate, 11,1/2 wavelength plate 10, the polarization state switch means also can be made of with depolarizer 20 1/2 wavelength plate 10.In this situation, control system 70 is via drive system 71, according to required 1/2 wavelength plate 10 and depolarizer 20 that drive.
In addition, in the above description, detect the incident light polarization state aspect of first optical splitter with pinpoint accuracy, first optical splitter 51 and second optical splitter 52 to the reflectivity of P polarization and the reflection characteristic that the reflectivity of S polarization is preferably had abundant difference.Specifically, the P polarization intensity I p that reflected light comprised of first optical splitter 51 and the strength ratio Ip/Is of S polarization intensity I s preferably can satisfy the reflection characteristic of the condition of Ip/Is＜1/2 or Ip/Is＞2.
In addition, in the above description, use optical splitter, and its reflected light is captured from light path with parallel panel form.But, be not limited thereto.Use optical splitter, the light that penetrates of polarization state that will be different with the incident light polarization state captures from light path, utilizes this optical splitter again, and the light intensity that penetrates according to taking out from light path also can detect the polarization of incident light state that is incident to this optical splitter.In this situation, the P polarization intensity I p that reflected light comprised of this optical splitter and the strength ratio Ip/Is of S polarization intensity I s preferably can satisfy the reflection characteristic of the condition of Ip/Is＜1/2 or Ip/Is＞2.
Therefore, as previously mentioned, because of the total reflection influence of right-angle prism, the straight line polarization that sends from LASER Light Source 1 becomes elliptic polarization, then considers to incide polarization state switch means (11,10,20).In addition, if be subjected to similar for example with the formed optic material of fluorite, and the polarized state of light with the incident of making is when changing the influencing of optic material of characteristic, and the straight line polarization that sends from LASER Light Source 1 can become elliptic polarization, then considers to incide polarization state switch means (11,10,20).
In this situation, 1/4 wavelength plate 11 can convert the elliptically polarized light of incident to rectilinearly polarized light, and the long axis direction in response to the elliptic polarization of incident must be set in its crystal optics axle on the desired angle position.In addition, 1/2 wavelength plate 10 can convert the rectilinearly polarized light of incident to have plane of polarization in a predetermined direction rectilinearly polarized light, and the plane of polarization direction in response to the straight line polarization of incident must be set in its crystal optics axle on the desired angle position.Then, be example with the polarization state switch means (11,10,20) of Figure 11, the method for adjustment of the crystal optics axle of the crystal optics axle of 1/4 wavelength plate 11 and 1/2 wavelength plate 10 is described.Be configured in the optical system that the crystal optics axle can optical axis be 1/4 wavelength plate 11 that freely rotates of center and 1/2 wavelength plate 10 comprising, following method is generally all to be suitable for.
Figure 18 is the method flow diagram of the crystal optics axle of the crystal optics axle of adjusting 1/4 wavelength plate in Figure 11 polarization state switch means and 1/2 wavelength plate.With reference to shown in Figure 180, in the method for adjustment of present embodiment, depolarizer 20 is kept out of the way from light path, and the crystal optics axle of 1/4 wavelength plate 11 and the angle position of initial established standards respectively are for example in the angle positions (S11) of-45 degree.Then, crystal optics axle at 1/4 wavelength plate 11 is fixed under the state of-45 standard angle positions of spending, the crystal optics axle of 1/2 wavelength plate 10 is rotated to from the standard angle positions of-45 degree on one side+angle positions of 45 degree (as with whenever+5 degree rotations), the crystal optics axle that captures 1/2 wavelength plate 10 is on one side exported (S12) at the polarization monitor 50 of each angle position.
Figure 19 illustrates when the crystal optics axle of 1/4 wavelength plate is fixed on the standard angle position of-4 5 degree, the output variation diagram of the polarization monitor of the crystal optics axle of 1/2 wavelength plate under all angles position.In Figure 19, transverse axis is the angle position (degree) of the crystal optics axle of 1/2 wavelength plate 10, and the longitudinal axis is the output (numerical value of Stoker parameter S 1 composition) of polarization monitor 50.Then, the crystal optics axle of 1/4 wavelength plate 11 is rotated to+45 angle positions of spending from-45 standard angle positions of spending with for example every+15 degree, under each angle position, with the crystal optics axle of 1/2 wavelength plate 10 on one side from the standard angle positions of-45 degree, rotate to+45 angle positions of spending with for example every+5 degree, Yi Bian capture of polarization monitor 50 outputs (S13) of the crystal optics axle of 1/2 wavelength plate 10 in each angle position.
Figure 20 illustrates when the crystal optics axle of 1/4 wavelength plate is set in each angle position, the output variation diagram of the polarization monitor of the crystal optics axle of 1/2 wavelength plate under all angles position.In Figure 20, a is the state of the crystal optics axle position of 1/4 wavelength plate 11 in the standard angle position of-45 degree, b is the state of the crystal optics axle position of 1/4 wavelength plate 11 in the standard angle position of-30 degree, c is the state of the crystal optics axle position of 1/4 wavelength plate 11 in the standard angle position of-15 degree, d is the state of the crystal optics axle position of 1/4 wavelength plate 11 in the standard angle position of 0 degree, e is the state of the crystal optics axle position of 1/4 wavelength plate 11 in the standard angle position of+15 degree, f is the state of the crystal optics axle position of 1/4 wavelength plate 11 in the standard angle position of+30 degree, and g is the state of the crystal optics axle position of 1/4 wavelength plate 11 in the standard angle position of+45 degree.In addition, identical with Figure 19, transverse axis is the angle position (degree) of the crystal optics axle of 1/2 wavelength plate 10, and the longitudinal axis is the output of polarization monitor 50.
Figure 21 illustrates the output changes in contrast figure of the polarization monitor of crystal optics axle under each angle position state of 1/4 wavelength plate.In Figure 21, transverse axis is the angle position (degree) of the crystal optics axle of 1/4 wavelength plate 11, and the longitudinal axis is the output contrast (the variation contrast of Stoker parameter S 1 composition) of polarization monitor 50.At this, for example in the output contrast of each angle position of the crystal optics axle of 1/4 wavelength plate 11, be to use maximal value and the minimum value of respectively exporting change curve among Figure 20 with a～g, utilize contrast=(maximal value-minimum value)/(maximal value+minimum value) to be defined.
In Figure 21, the crystal optics axle of 1/4 wavelength plate is set in the output contrast when maximum, the elliptically polarized light that is incident to 1/4 wavelength plate 11 can be converted into the straight line polarization.In the method for adjustment of present embodiment, the output changes in contrast of the polarization monitor of crystal optics axle under each angle position state of reference 1/4 wavelength plate 11, try to achieve output and contrast the crystal optics shaft angle degree position of 1/4 wavelength plate 11 when becoming maximum (in the words of Figure 21, be about+30 angle positions of spending), as desired first angle position, make elliptically polarized light be transformed to rectilinearly polarized light (S14).
Figure 22 illustrates crystal optics axle with 1/4 wavelength plate to be fixed on when making elliptically polarized light be transformed on first angle position of rectilinearly polarized light the output variation diagram of the polarization monitor of the crystal optics axle of 1/2 wavelength plate under each angle position.In Figure 22, transverse axis is the angle position (degree) of the crystal optics axle of 1/2 wavelength plate 10, and the longitudinal axis is the output of polarization monitor 50.In Figure 22,, the crystal optics axle of 1/2 wavelength plate 10 make polarization monitor 50 be output as maximum or hour, the rectilinearly polarized light that incides 1/2 wavelength plate 10 can be converted into V polarization (vertical polarization) or H polarization (lateral misalignment shakes) when being set in.
In the method for adjustment of present embodiment, when the crystal optics axle of 1/4 wavelength plate 11 is fixed on first angle position, the output of the polarization monitor 50 of crystal optics axle under each angle position of reference 1/2 wavelength plate 10 changes, the angle position of crystal optics axle of asking for output is maximum or 1/2 wavelength plate 10 hour is (in the words of Figure 22, be approximately-17.5 degree or+angle positions of 27.5 degree, or near it), as desired second angle position, make the rectilinearly polarized light of incident be converted into V polarization or H polarization (S15).
So, in the end, control system 70 is via drive system 71, the angle position of the crystal optics axle of 1/4 wavelength plate 11 is positioned at first angle position that the elliptically polarized light that makes incident converts rectilinearly polarized light to, and the angle position of the crystal optics axle of 1/2 wavelength plate 10 is positioned at the rectilinearly polarized light that makes incident converts second angle position (S16) that has plane of polarization rectilinearly polarized light (for example V polarization or H polarization) at specific direction to.In addition, in response to the variation of lighting condition (the pupil face of illumination optical apparatus or near the shape of formed light intensity distributions or the variation of size it.), consider above-mentioned first angle position and second angle position, so the crystal optics axle of the crystal optics axle of 1/4 wavelength plate 11 and 1/2 wavelength plate 10 is preferably set correction in response to demand.In addition, in the above-described embodiments, use 1/4 wavelength plate and 1/2 wavelength plate, but also can use 2 1/4 wavelength plates to come as the polarization state switch means as the polarization state switch means.
Above explanation is according to Fig. 1 or Figure 16, according to the light beam that sends from light source, be used for forming at the pupil face or near it illumination pupil distribution formation means of predetermined light intensity distribution, for comprising the illumination optical apparatus of two diffraction optics assemblies (4,6), and exposure device possesses this illumination optical apparatus.But be not limited to the framework of Fig. 1 or Figure 16.The present invention's illumination optical apparatus applicatory can have various variation.Figure 23 illustrates to have the structural representation of the exposure device of the illumination pupil distribution formation means of isostructure mutually with Fig. 1 or Figure 16.
Exposure device and the exposure device of Figure 16 that Figure 23 changes example have similar structure, the structure of the pupil distribution formation means of still throwing light on, that is the structure of 8 of diffraction optics assembly 4 and microlens arrays is inequality.Focus on the dissimilarity with the exposure device of Figure 16 below, illustrate that Figure 23 changes the structure and the effect of example.Change in the exposure device of example at Figure 23, for example, be incident to afocal lens (relay optical system) 85 through the light beam of third wheel band illumination with diffraction optics assembly 4a.Afocal optical system 85 is to set a kind of afocal system (no focus optical system) for, makes that the position of front focus position and diffraction optics assembly 4a is roughly the same, and the back focus position haply with the position consistency of the predetermined face 86 shown in the drawing dotted line.
Therefore, be incident to the almost parallel light beam of diffraction optics assembly 4a, after the light intensity distributions that forms wheel belt shape on the pupil face of afocal lens 85, just become the almost parallel light beam and penetrate from afocal lens.In addition, among the front side lens group 85a and the light path between rear side lens group 85b of afocal lens 85, in pupil or near position it, from light source side in regular turn layout circle coning axle prism (cone axicon) 87, first cylindrical lens to 88 and second cylindrical lens to 89, but their detailed construction with the effect then be described below.Below for simple declaration, ignore circular cone revolve a prism 87, first cylindrical lens to 88 and second cylindrical lens to 89 effect, basic framework and effect are described.
Through the light beam of afocal lens 85,, and incide microlens array 8 as optical integrator via the variable zoom lens of σ value (multiplying power change optical system) 90.The position of predetermined face 86 is to be configured near the focal position, front side of zoom lens 90, and the plane of incidence of microlens array 8 then is configured near the rear side focal position of zoom lens 90.In other words, zoom lens 90 are that the plane of incidence that is configured to predetermined face 86 and microlens array 8 substantially is the relation of fourier transform, and the plane of incidence of the pupil face of afocal lens 85 and microlens array 8 is configured to optical conjugate.Therefore, also the pupil face with afocal lens 85 is identical on the plane of incidence of microlens array 8, and can form for example is the wheel band photograph open country at center with the optical axis.It is relevant with the focal length of zoom lens 90 according to wild global shape that this takes turns band, does similar variation.
Constitute each micro lens of microlens array 8, have and should form the similar rectangular section of photograph wild shape (and even the exposure area shape that on wafer W, should form) on the light shield M.Be incident to the light beam of microlens array 8, cut apart two-dimensionally by most micro lens, and go up at its back focal plane (and even illumination pupil) and to form two these light sources that have with the wild rough same light intensity distributions of the formed photograph of the incident light of microlens array 8, that is be formed centrally in optical axis AX being and be essentially the secondary souce that the wheel belt shape area source is constituted.
Figure 24 illustrates the front lens group that is configured in afocal lens among Figure 23 and the circular cone in the light path between the rear lens group revolves a configuration diagram of prism optical system.Circular cone revolves a prism optical system 87 and comprises in regular turn from light source side: in light source side towards the plane and at the first prism portion material 87a of light shield side towards recessed cone shape plane of refraction; And in the light shield side towards the plane and at the second prism portion material 87b of light source side towards the plane of refraction of dome taper.
The dome awl plane of refraction of the recessed circular cone plane of refraction of the first material 87a of prism portion and the second material 87b of prism portion is to be formed complementally to contact with each other.In addition, one of them material of at least the first material 87a of prism portion and the second material 87b of prism portion is to be configured to move along optical axis AX.Between the dome awl plane of refraction of the recessed circular cone plane of refraction of the first material 87a of prism portion and the second material 87b of prism portion is variable at interval.
Under the state that the dome awl plane of refraction of the recessed circular cone plane of refraction of the first material 87a of prism portion and the second material 87b of prism portion contacts with each other, it is functions as parallel panel that circular cone revolves a prism optical system 87, can be not influential to formed wheel belt shape secondary souce.But, separating each other when boring plane of refraction with the dome of the second material 87b of prism portion at the recessed circular cone plane of refraction of the first material 87a of prism portion, circular cone revolves 87 functions as so-called light diffuser of a prism optical system.Therefore, along with circular cone revolves an interval variation of prism optical system 87, just can change the angle of the incident beam of predetermined face 86.
Figure 25 illustrates circular cone, and to revolve a prism optics be for the throw light on Action Specification figure of formed secondary souce of the wheel band that Figure 23 changes example.Change the wheel band illumination of example at Figure 23, the focal length that is spaced apart zero and zoom lens 90 that circular cone revolves a prism optical system 87 is set in formed minimum wheel belt shape secondary souce 130a under the minimum state, expand predetermined value by making circular cone revolve an interval of prism optical system 87 to from zero, its width (1/2 of the difference of external diameter and internal diameter: drawing arrow is represented) can't change, and is varied to the simultaneously extended wheel belt shape secondary souce 130b of external diameter and internal diameter.In other words, utilize circular cone to revolve an effect of prism optical system 87, the width of wheel belt shape secondary souce can't change, but it takes turns band than (inner/outer diameter) and size (external diameter) change simultaneously.
Figure 26 illustrates the throw light on Action Specification figure of formed secondary souce of the example of wheel band zoom lens change to(for) Figure 23.The wheel band that changes example at Figure 23 throws light on, and with the formed wheel belt shape secondary souce of standard state 130a, expands predetermined value by the focal length with zoom lens 90 to from minimum value, and its global shape can similarly be amplified to wheel belt shape secondary souce 130c.In other words, by the effect of zoom lens 90, the wheel band ratio of wheel belt shape secondary souce can't change, and its width can change simultaneously with size (external diameter).
Figure 27 is front lens group and pair structural representation right with second cylindrical lens of first cylindrical lens in the light path between the rear lens group that illustrates the afocal lens that is configured among Figure 23.In Figure 27, from light source side dispose in regular turn first cylindrical lens to 88 and second cylindrical lens to 89.First cylindrical lens for example comprises from light source side in regular turn to 88: the first cylinder negative lens 88a that has negative refractive power on the YZ plane and do not have refracting power on the XY plane; And the first cylinder positive lens 88b that on same YZ plane, has positive refractive power and on the XY plane, do not have refracting power.
On the other hand, second cylindrical lens for example comprises from light source side in regular turn to 89: the second cylinder negative lens 89a that has negative refractive power on the XY plane and do not have refracting power on the YZ plane; And the second cylinder positive lens 89b that on same XY plane, has positive refractive power and on the YZ plane, do not have refracting power.The first cylinder negative lens 88a and the first cylinder positive lens 88b be configured to optical axis AX be the center and integratedly the rotation mode.In the same manner, the second cylinder negative lens 89a and the first cylinder positive lens 89b be configured to optical axis AX be the center and integratedly the rotation mode.
So, under state shown in Figure 27, first cylindrical lens is as the function that has the beam expander of magnification in the Z direction to 88, and second cylindrical lens is as the function that has the beam expander of magnification at directions X to 89.In the variation example of Figure 23, first cylindrical lens to 88 magnification and second cylindrical lens to 89 magnification be set for mutually the same.
Figure 28 to Figure 30 illustrates first cylindrical lens pair and second cylindrical lens to the throw light on Action Specification figure of formed secondary souce of the wheel band that changes example for Figure 23.In Figure 28, first cylindrical lens is to set for respect to the Z axle and around optical axis AX to become the angles of+45 degree to 88 magnification direction, and second cylindrical lens then is set at respect to the Z axle to 89 magnification direction and becomes the angles of-45 degree around optical axis AX.
Therefore, first cylindrical lens is perpendicular to one another to 89 magnification direction to 88 magnification direction and second cylindrical lens; First cylindrical lens to 88 and second cylindrical lens to 89 combining optical in, the magnification of Z direction and the magnification of directions X are mutually the same.The result, under the positive circular state as shown in figure 28, by first cylindrical lens to the light beam of 88 and second cylindrical lens to 89 combining optical, the Z direction with can be exaggerated with identical magnification at directions X, form the secondary souce of positive circular wheel band shape at illumination pupil place.
Relatively, in Figure 29, first cylindrical lens is to set for respect to the Z axle and around optical axis AX to become the angles of+80 degree to 88 magnification direction, and second cylindrical lens then is set at respect to the Z axle to 89 magnification direction and becomes the angles of-80 degree around optical axis AX.Therefore, first cylindrical lens to 88 and second cylindrical lens to 89 combining optical in, the magnification of directions X is greater than the magnification of Z direction.The result, under the horizontal ellipticalness of Figure 29, by first cylindrical lens to the light beam of 88 and second cylindrical lens, compared to the Z direction to 89 combining optical, directions X can be exaggerated with bigger magnification, forms directions X at illumination pupil place and be the secondary souce of the elongated wheel belt shape of growing crosswise.
On the other hand, in Figure 30, first cylindrical lens is to set for respect to the Z axle and around optical axis AX to become the angles of+10 degree to 88 magnification direction, and second cylindrical lens then is set at respect to the Z axle to 89 magnification direction and becomes the angles of-10 degree around optical axis AX.Therefore, first cylindrical lens to 88 and second cylindrical lens to 89 combining optical in, the magnification of Z direction is greater than the magnification of directions X.The result, under the vertical ellipticalness of Figure 30, by first cylindrical lens to the light beam of 88 and second cylindrical lens, compared to directions X to 89 combining optical, the Z direction can be exaggerated with bigger magnification, forms the Z direction at illumination pupil place and be the secondary souce of elongated lengthwise wheel belt shape.
Secondly, by with first cylindrical lens to 88 and second cylindrical lens to 89 free positions that are set between the horizontal ellipticalness of the positive circular state of Figure 28 and Figure 29, just can form the wheel belt shape secondary souce of growing crosswise of various different aspect ratios.In addition, by with first cylindrical lens to 88 and second cylindrical lens to 89 free positions that are set between the vertical ellipticalness of the positive circular state of Figure 28 and Figure 30, just can form the lengthwise wheel belt shape secondary souce of various different aspect ratios.In addition, change in the example at Figure 23, the diffraction optics assembly that utilization setting circular illumination is used or most utmost point (four utmost points etc.) illumination wait with the diffraction optics assembly and replace the wheel belt shape illumination with diffraction optics assembly 4a, just can carry out circular illumination or various deformation illumination.As above-mentioned, the variation example of Figure 23 to Figure 30 can change the illumination polarized state of light in response to the characteristic of light shield M, more and then can momentarily be adjusted at the aspect ratio of formed secondary souce on the illumination pupil.By this, just can use the suitable lighting condition that pattern properties realized, carry out excellent exposure according to light shield M.
In addition, in the various embodiments described above and variation example, when will be for plane of illumination (light shield face, wafer (photonasty substrate) face and imaging surface) polarization state be replaced with for example straight line polarization state and unpolarized state, perhaps when X polarization state and Y polarization state, if be created in the illumination deviation change of plane of illumination, when the change of the light intensity branch of pupil face or change in the heart far away (telecentric) characteristic of plane of illumination, preferably according to the change of the polarization state of plane of illumination, carry out the control of illumination deviation, in the control of the light intensity branch of pupil face and/or in the control of the heart far away (telecentric) characteristic of plane of illumination, to suppress change with the illumination deviation, in the change of the light intensity branch of pupil face and/or in the change control of the heart far away (telecentric) characteristic of plane of illumination.
For example, can be by the focus optical 9 of change Fig. 1, the lens position and the posture of at least a portion in most the lens subassemblies of the formation focus optical 9a of Figure 16 and Figure 23 can be controlled about being penetrated the illumination deviation of face.In addition, in the focus optical 9 and the light path between light shield M of Fig. 1, in the focus optical 9a and the light path between light shield plate washer MB of Figure 16 and Figure 23, for example disposing, the spy opens 2002-100561 communique (and corresponding therewith U.S. Patent Publication US2003/0025890A, at this instructions with reference to using U.S. Patent Publication US2003/025890A) the concentration filter plate that shows of opening, or the spy opens 2003-92253 communique (and corresponding therewith U.S. Patent Publication US2003/067591A, at this instructions with reference to using U.S. Patent Publication US2003/067591A), utilize the rotation angle of this concentration filter plate of control and position also can be controlled at illumination deviation on the plane of illumination.In addition, for example open the 2002-184676 communique and opened the light shield plate washer MB that the variable edge that shows replaces Figure 16 and Figure 23 with the spy, or variable edge is arranged near the light shield plate washer MB, to also can be controlled at the illumination deviation on the plane of illumination along width setup Cheng Yufei direction of scanning, the exposure area difference of direction of scanning.
In addition, above-mentioned spy is opened 2002-100561 communique (U.S. Patent Publication US2003/0025890A) in utilization or the spy opens the disclosed concentration filter of 2003-92253 communique (U.S. Patent Publication US2003/0067591A) plate, be configured near the illumination pupil, for example near the exiting side of microlens array 8, also can be controlled at the light intensity distributions of pupil face.
Then, about the control of disposition far away, can utilize the focus optical 9 of change Fig. 1, the lens position and the posture of at least a portion in most the lens subassemblies of the formation focus optical 9a of Figure 16 and Figure 23 are controlled.
In addition, light intensity distributions control and disposition control aspect far away about the layout of the illumination deviation on these plane of illuminations, pupil face, measure the set condition (depolarizer slotting takes off, the rotation angle of 1/2 wavelength plate and the rotation angle of 1/4 wavelength plate) of polarization state switch means in advance, the relevance of the state of the illumination deviation on the plane of illumination, the light intensity distributions of pupil face and the heart far away, according to the set condition of polarization state switch means, also can control the illumination deviation on the plane of illumination, the light intensity distributions of pupil face and the state of the heart far away.In addition, measure plane of illumination or with plane of illumination be the illumination deviation of the plane of illumination on the optical conjugate face, the light intensity distributions of pupil face and the state of the heart far away, according to measurement result, also can control the illumination deviation on the plane of illumination, the light intensity distributions of pupil face and the state of the heart far away again.
In addition, the various embodiments described above with change in the example, use file and pycnomorphous majority to have microlens array 8 that the positive refractive power micro lens constituted, but can use the column type microlens array to replace as optical integrator.The column type microlens array comprises the first one dimension cylindrical lens array that forms with the spacing arrangement along predetermined first direction; And the second one dimension cylindrical lens array that forms with spacing arrangement along the second direction of intersecting with first direction.First and second one dimension cylindrical lens array of this column type microlens array is preferably and is arranged on integratedly on the light peneration substrate, and possesses most the cylindrical lens array boards that comprise first and second one dimension cylindrical lens array.A most cylindrical lens array board are preferably along optical axis direction, dispose at interval across one.In addition, along the spacing of the first direction of the first one dimension cylindrical lens array and along the spacing of the second direction of the second one dimension cylindrical lens array, being preferably to have a spacing below 2mm at least.
By this kind framework, each plane of refraction is inequality with going up formed general fly's-eye lens at two-dimentional curved surface (dome shape), each plane of refraction of first and second one dimension cylindrical lens array of column type microlens array is to go up formed at one dimension curved surface (cylindric), so high-accuracy processing becomes easily, and then can reduce manufacturing cost.Particularly, when situation below 2mm of the minimum spacing of column type microlens array, the effect that manufacturing cost reduces is tangible.That is to say that this kind column type microlens array for example can utilize attrition process, etching and processing and die mould processing or the like mode to make.
Because the column type microlens array of reaching low cost and high precision face shape by application can be tested the illumination of excellent in uniformity, so the imaging performance of polarization illumination just significantly promotes, and on whole exposure area, can form the good and trickle pattern of transfer printing degree of accuracy.
This kind column type microlens array, this case applicant's Japanese publication case special be willing to 2002-152634 number explanation number with graphic (with and corresponding, filed an application to the U.S. on May 27th, 2003 No. 445022) in announcement to some extent.In this manual, with reference to the announcement of No. the 445022nd, this U. S. application case and use.
In the exposure device of the foregoing description, utilize illumination optical apparatus throw light on light shield (cross mark) (illumination processing procedure), by using projection optical system that formed pattern transferring on the light shield is transferred to (exposure manufacture process) on the photonasty substrate, just can produce micromodule (semiconductor subassembly, photography assembly, LCD assembly, thin-film head or the like).Then,, the exposure device that uses the foregoing description is described, predetermined circuit pattern is formed at as on the wafer of sensitive substrate etc., a kind of method example when obtaining semiconductor subassembly with reference to the process flow diagram of Figure 12.
At first, in the step 301 of Figure 12, with the metal film evaporation on a collection of wafer.Then in step 302, photoresistance is coated on the metal film on this batch wafer.Afterwards, in step 303, use the exposure device of the foregoing description, with the pattern image on the light shield, via projection optical system, each shooting area on this batch wafer is transferred in exposure in regular turn.Afterwards, in step 304, after the photoresistance on this batch wafer developed,, serve as the cover curtain with the photoresistance pattern on this batch wafer in step 305, carry out etching, use each shooting area that the circuit pattern on the corresponding light shield is formed on each wafer.Afterwards, by forming more upper strata circuit pattern etc., produce semiconductor subassembly etc.According to above-mentioned method for producing semiconductor module, the semiconductor subassembly that possesses imperceptible circuit pattern also can obtain good productive rate.
In addition, in the exposure device of the embodiment of the invention, form predetermined pattern (circuit pattern, electrode pattern etc.), can obtain LCD assembly as micromodule by going up at panel (glass substrate).Then, with reference to the process flow diagram of Figure 13, the method example of this moment is described.Pattern as Figure 13 forms engineering 401, uses the exposure device of the foregoing description, and the pattern transfer on the light shield is exposed to photonasty substrate (glass substrate of coating photoresistance), promptly carries out so-called micro-photographing process.Utilize this micro-photographing process, the predetermined pattern that will comprise most electrodes is formed on the photonasty substrate.Afterwards, substrate utilization development engineering, etching engineering and the photoresistance of exposure are peeled off each engineering such as engineering, form predetermined pattern on substrate, then enter color filter and form engineering 402.
Then, form engineering 402 at color filter, three somes combinations of corresponding red R (Red), green G (Green) and blue B (Blue) are aligned to rectangular, and perhaps R, G, three filter configuration set of B are in a plurality of horizontal scan direction, to form color filter.Then, after color filter forms engineering 402, executive module (cell) packing engineering 403.At assembly packing engineering 403, use to have to form the substrate of predetermined pattern of engineering 401 gained and the color filter etc. that forms engineering 402 gained at color filter at pattern, be assembled into liquid crystal panel (Liquid crystal module).
At assembly packing engineering 403, for example have pattern form engineering 401 gained predetermined pattern substrate and form at color filter between the color filter of engineering 402 gained and inject liquid crystal, make liquid crystal panel (Liquid crystal module).Afterwards, at module packing engineering 404, the liquid crystal panel (Liquid crystal module) that makes assembling is installed is carried out each product such as the circuit of display action, backlight assembly, to finish LCD assembly.According to above-mentioned LCD assembly manufacture method, the LCD assembly with imperceptible circuit pattern also can obtain good productive rate.
In addition, in the embodiment in figure 1, utilize Focused Optical system 9,, and throw light on overlappingly on light shield M light that secondary souce sent light harvesting in addition.But the present invention is not limited thereto kind of an embodiment.Variation example shown in Fig. 16 in the light path between Focused Optical system 9 and light shield M, also can dispose illumination visual field aperture (light shield baffle plate) and the relay optical system that this picture that throws light on visual field aperture is formed on the light shield M.In this situation, Focused Optical system 9 is just with light that secondary souce sent light harvesting and throwing light on overlappingly on the aperture of the illumination visual field in addition, and then will the throw light on picture of peristome (light passes portion) of visual field aperture of relay optical system is formed on the light shield M.
In addition, the foregoing description be to use KrF excimer laser light (wavelength: 248nm) or ArF excimer laser light (wavelength: 193nm) as the exposure light, but the present invention is not limited thereto.The LASER Light Source that other is suitable is for example supplied with the F of wavelength 157nm laser light 2LASER Light Source, or supply with light source beyond the laser light also is to be applicable to the present invention as the lamp source of the ultraviolet light of I line or g line etc.Secondly, the foregoing description is to be that example illustrates the present invention with the projection optical system that possesses illumination optical apparatus, also can understand but the present invention also is applicable to the general illumination optical apparatus person of the plane of illumination beyond the light shield that is used for throwing light on.
In addition, in the above-described embodiments, be filled in method in the light path between projection optical system and the photonasty substrate greater than 1.1 medium (being generally liquid), also can use so-called liquid-soaked method with refractive index.In this situation, as the method in the light path of liquid filling between projection optical system and photonasty substrate, can adopt international publication number WO99/49504 communique to open the localized liquid fill method that shows, or special open flat 6-124873 communique and open platform that making of showing keep exposure object mobile method in liquid tank, or special open flat 10-303114 communique and open the liquid tank of formation certain depth on platform that shows, again substrate is remained in method wherein or the like.
In addition, as liquid, it has penetrability for exposure light, and refractive index is high as much as possible, and for the photoresistance that is coated with on projection optical system or the substrate surface, preferably uses stable thing.For example, can use pure water or deionized water to be liquid serving as the exposure light time with KrF excimer laser light or ArF excimer laser light.In addition, use F 2Laser light also can be used and can penetrate F as the exposure light time 2Laser light person is as liquid, for example fluorine prime system oil or cross the fluorine prime system liquid of fluorinated polyether (PFPE) etc.
In addition, opening flat 10-163099 communique, spy as the spy opens institutes such as flat 10-214783 communique, special table 2000-505958 communique and opens and show, the present invention also is applicable to two platform-type (the twin stage type) exposure device that carries two platforms, and it can be distinguished the processed substrate of mounting wafer etc. and can move independently in the XY direction.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.

Claims (37)

1. illumination optical apparatus according to the light that sends from light source portion, with the specific polarization state plane of illumination that throws light on, is characterized in that this illumination optical apparatus comprises:
The leaded light means are configured in the light path between this light source portion and this plane of illumination, will guide to this plane of illumination from the photoconduction that this light source portion is sent; And
Polarization state change correction means is configured in the light path between this light source portion and this plane of illumination, in order to revise the polarization state change on this plane of illumination.
2. illumination optical apparatus according to claim 1 is characterized in that wherein said polarization state change correction means more comprises:
Polarization state is adjusted means, is configured in the light path between this light source portion and this plane of illumination, in order to be adjusted at the polarization state on the plane of illumination;
The polarization monitor is configured in the light path between this light source portion and this plane of illumination, in order to detect polarized state of light; And
Control part according to the output of this polarization monitor, is adjusted means to control this polarization state.
3. illumination optical apparatus according to claim 2 is characterized in that wherein said polarization state adjustment means comprise can adjust phase-plate, is configured in the light path between this light source portion and this polarization monitor.
4. illumination optical apparatus according to claim 3 is characterized in that wherein said leaded light means comprise the optic material, and the polarized state of light with the incident of making changes and the characteristic of ejaculation.
5. illumination optical apparatus according to claim 4 is characterized in that wherein said optic material is formed by the crystal optics material.
6. illumination optical apparatus according to claim 1 is characterized in that wherein said polarization state change correction means is used for the change of the caused light polarization state on this plane of illumination of light breakthrough portion material in the light path of light of this supply of revisal.
7. illumination optical apparatus according to claim 6 is characterized in that wherein said smooth breakthrough portion material is made of the crystal optics material.
8. illumination optical apparatus according to claim 7, it is characterized in that wherein said smooth breakthrough portion material is that crystalline material by cubic system is constituted, be configured in the light path between this light source portion and this plane of illumination, the light direct of travel is set for than crystal orientation＜110〉more near crystal orientation＜111〉or crystal orientation＜100.
9. illumination optical apparatus according to claim 8, it is characterized in that wherein said polarization state change correction means is configured in the light path between this light source portion and this plane of illumination, comprise polarized condition adjustment means, to adjust again the polarized condition on this plane of illumination, wherein this light breakthrough portion material is formed by cubic system, and the light direct of travel is set for than crystal orientation＜110〉more approaching＜111〉or＜100
10. illumination optical apparatus according to claim 9, it is characterized in that wherein said smooth breakthrough portion material comprises the optic material of stationkeeping in this light path, the optical axis of this optic material is to set for and crystal orientation＜111〉or crystal orientation＜100 consistent in fact.
11. illumination optical apparatus according to claim 9, it is characterized in that wherein said smooth breakthrough portion material comprises the right-angle prism as back reflector, wherein the plane of incidence of this right-angle prism sets with exit facet that { 100} is consistent, and the reflecting surface of this right-angle prism is set for, and { 110} is consistent with crystal plane in fact with crystal plane haply for.
12. illumination optical apparatus according to claim 9, it is characterized in that wherein said smooth breakthrough portion material comprises parallel panel, in this light path, be provided with in this optical axis with tiltable, and make along the light of this optical axis incident is parallel and move, the optical axis of this parallel panel is to set for and crystal orientation＜100〉consistent in fact
13., it is characterized in that wherein said polarization state change correction means is to be used for long-time change to the polarization state on this plane of illumination according to the described illumination optical apparatus of arbitrary claim in the claim 9.
14. an exposure device is characterized in that it comprises the described illumination optical apparatus of arbitrary claim in the claim 1 to 13, with predetermined pattern exposure to the photonasty substrate that is configured on this plane of illumination.
15. exposure device according to claim 14 is characterized in that more comprising:
Projection optical system is configured in the light path between the second setting face that the first setting face that this predetermined pattern sets and this photonasty substrate set, and this pattern image of being scheduled to is formed on this second setting face;
The pupil intensity distributions forms means, in order to form predetermined light intensity distribution on the pupil of this projection optical system and conjugate position or near the position it; And
Pupil intensity distributions change means, in order to the shape that changes this predetermined light intensity distribution and size at least one of them.
16. exposure device according to claim 15, it is characterized in that more comprising polarization state change means, be configured in the light path between this light source portion and this plane of illumination, in order to the throw light on polarized state of light of this plane of illumination of change, wherein these pupil intensity distributions change means are according to the pattern properties that should be scheduled to, the shape that changes this predetermined light intensity distribution and size at least one of them
These polarization state change means are the variations of one of them at least according to shape with the size of this predetermined light intensity distribution, change the polarized state of light of this plane of illumination that throws light on.
17. exposure device according to claim 16 is characterized in that wherein said polarization state change means comprise the polarization state switch means, switches between specific polarization state and unpolarized state in order to the polarized state of light of this plane of illumination that will throw light on,
Wherein this polarization state switch means is according to the variation of one of them at least of shape with the size of this predetermined light intensity distribution, switches between this specific polarization state and this unpolarized state.
18. exposure device according to claim 16 is characterized in that wherein said pupil intensity distributions formation means are along on the spacing direction of formed line and space pattern on the light shield, with across forming at interval two highlight strength distributed areas,
These polarization state change means are with the polarized state of light from these two highlight strength branch area illuminations to this plane of illumination, set for the vertical in fact direction of this spacing direction on, have the straight line polarization state of plane of polarization.
19. exposure device according to claim 18, it is characterized in that it wherein being to be symmetrical in the optical axis of this illumination optical apparatus and to form in these two highlight strength branch zones, be the center wherein with this optical axis, be defined as σ o with the ratio of the diameter phi of the external circumscribed circle diameter φ o in this two highlight strength branches zone and this pupil face, σ o=φ o/ φ p, wherein σ o satisfies following condition:
0.7≤σo。
20. exposure device according to claim 19, it is characterized in that wherein said two highlight strength branch zones are to be symmetrical in the optical axis of this illumination optical apparatus and to form, be the center wherein with this optical axis, be defined as σ o with the ratio φ o/ φ p of the diameter phi p of the external circumscribed circle diameter φ o in this two highlight strength branches zone and this pupil face, and with this optical axis is the center, is defined as σ i with the ratio φ i/ φ p of the diameter phi p of the inscribed circle diameter φ i that connects in these two highlight strength branch zones and this pupil face
0.5≤σi/σo。
21. exposure device according to claim 16, it is characterized in that wherein said pupil intensity distributions formation means are is the center with the optical axis of this illumination optical apparatus in fact, form a highlight strength branch zone, wherein these polarization state change means are with the polarized state of light from this highlight strength branch area illumination to this plane of illumination, set on the vertical in fact direction of the formed line on the phase shift light shield and the spacing direction in space, have the straight line polarization state of plane of polarization.
22. exposure device according to claim 21 is characterized in that the ratio of the diameter phi p of the big or small φ in wherein said highlight strength branch zone and this pupil face is defined as σ, σ=φ/φ p, and wherein σ o satisfies following condition:
σ≤0.4。
23. an exposure method is characterized in that it may further comprise the steps:
Illumination step, via any one described illumination optical apparatus of claim 1 to 13, or via the illumination optical apparatus of being adjusted by any one described method of adjustment of claim 46 to 48, predetermined pattern throws light on; And
Step of exposure, the pattern exposure that this is predetermined is to the photonasty substrate that is configured in this plane of illumination.
24. exposure method according to claim 23 is characterized in that more comprising:
Projection step is used projection optical system, forms this predetermined pattern image;
The pupil intensity distributions forms step, in order to form predetermined light intensity distribution on the pupil of this projection optical system and conjugate position or near the position it; And
Pupil intensity distributions change step, in order to the shape that changes this predetermined light intensity distribution and size at least one of them.
25. exposure method according to claim 24, it is characterized in that wherein in this pupil intensity distributions change step, more comprise according to the pattern properties that should be scheduled to, the shape that changes this predetermined light intensity distribution and size at least one of them, and, change the polarized state of light of this plane of illumination that throws light on according to the shape and the big or small variation of one of them at least of this predetermined light intensity distribution.
26. exposure method according to claim 25, it is characterized in that wherein said pupil intensity distributions forms step, more comprise along on the spacing direction of formed line and space pattern on the light shield, to form two highlight strength distributed areas across the interval, and polarized state of light that will be from these two highlight strength branch area illuminations to this plane of illumination, set for the vertical in fact direction of this spacing direction on, have the straight line polarization state of plane of polarization.
27. exposure method according to claim 26, it is characterized in that it wherein being to be symmetrical in the optical axis of this illumination optical apparatus and to form in these two highlight strength branch zones, be the center wherein with this optical axis, be defined as σ o with the ratio of the diameter phi p of the external circumscribed circle diameter φ o in this two highlight strength branches zone and this pupil face, σ o=φ o/ φ p, wherein σ o satisfies following condition:
0.7≤σo。
28. exposure method according to claim 26, it is characterized in that wherein said two highlight strength branch zones are to be symmetrical in the optical axis of this illumination optical apparatus and to form, be the center wherein with this optical axis, be defined as σ o with the ratio φ o/ φ p of the diameter phi p of the external circumscribed circle diameter φ o in this two highlight strength branches zone and this pupil face, and with this optical axis is the center, is defined as σ i with the ratio φ i/ φ p of the diameter phi p of the inscribed circle diameter ψ i that connects in these two highlight strength branch zones and this pupil face
0.5≤σi/σo。
29. an exposure method in order to will be set in the pattern of first light shield, exposes to the photonasty substrate that is configured on second, it is characterized in that this exposure method may further comprise the steps:
First step provides light;
Second step, according to this light that this first step provided, this light shield throws light on;
Third step will be at the pattern exposure of this illuminated light shield of this second step to this photonasty substrate; And
The 4th step is revised the change of the polarized state of light on this second.
30. exposure method according to claim 29, it is characterized in that more comprising the 5th step that detect polarized state of light, wherein the 4th step more comprises a step, according to the detected light polarization state of the 5th step, adjust the polarization state on this second.
31. exposure method according to claim 30 is characterized in that wherein said the 4th step is used for the change of the caused light polarization state on this second of light breakthrough portion material in the light path of light of this supply of revisal.
32. exposure method according to claim 31 is characterized in that wherein said the 4th step is to be used for long-time change to the polarization state on this plane of illumination.
33. an illumination optical apparatus, the light that sends with light source portion shines plane of illumination, comprising:
Polarized illumination is set means, and the aforementioned polarized state of light that will send from this light source portion is set at specific polarization state; And
Light breakthrough portion material is configured in the light path between this light source portion and this polarized illumination setting means,
It is characterized in that:
This light breakthrough portion material is formed with cubic system,
This light breakthrough portion material is to form: the direct of travel that passes the light of this light breakthrough portion material is to set for than crystal orientation＜110〉more near crystal orientation＜111〉or crystal orientation＜100.
34. illumination optical apparatus according to claim 33 is characterized in that: this light breakthrough portion material is that fluorite, calcium fluoride, barium fluoride or magnesium fluoride form.
35. an illumination optical apparatus, the light that sends with light source portion shines plane of illumination, comprising:
Polarized illumination is set means, and the aforementioned polarized state of light that will send from this light source portion is set at specific polarization state; And
Light breakthrough portion material is configured in the light path between this light source portion and this polarized illumination setting means,
It is characterized in that:
This light breakthrough portion material is dynamically maintained, to suppress the stress birefrin that this light breakthrough portion material is produced.
36. an exposure device is characterized in that it comprises the described illumination optical apparatus of arbitrary claim in the claim 33 to 35, with the pattern exposure of light shield to the photonasty substrate that is configured on this plane of illumination.
37. an exposure method is characterized in that it may further comprise the steps:
Illumination step is used the described illumination optical apparatus of arbitrary claim in the claim 33 to 35, and light shield throws light on; And
Step of exposure, with the pattern exposure of this light shield to the photonasty substrate that is configured on this plane of illumination.
CN2007101956440A 2002-12-03 2003-12-02 Illumination optical system, exposure apparatus, and exposure method Expired - Fee Related CN101201553B (en)

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CN103869626A (en) * 2012-12-11 2014-06-18 上海微电子装备有限公司 Ultrahigh numerical aperture lithography imaging polarization compensation apparatus and method thereof
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CN109581820A (en) * 2017-06-06 2019-04-05 株式会社Orc制作所 Exposure device

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