CN101200808A - Method for developing zinc oxide crystallite by chemical gas-phase transmitting process - Google Patents
Method for developing zinc oxide crystallite by chemical gas-phase transmitting process Download PDFInfo
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- CN101200808A CN101200808A CNA200610119425XA CN200610119425A CN101200808A CN 101200808 A CN101200808 A CN 101200808A CN A200610119425X A CNA200610119425X A CN A200610119425XA CN 200610119425 A CN200610119425 A CN 200610119425A CN 101200808 A CN101200808 A CN 101200808A
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Abstract
The invention relates to an oxidation zinc crystal growing method by chemical vapor transport, belonging to the crystal material field. The method includes the following steps: 1). adopting highly pure ZnO compacting blocks as raw materials and carbon or graphite as catalysts and producing ZnO single crystal on oxidation zinc or sapphire wafer with gallium nitride (or oxidation zinc) at the extension; 2). using quartz or metal ampoule and heating raw material end to be 1000-1150 DEG C and seed crystal end to be 950-1100 DEG C after the vacuum sealing. The invention has the advantages of simple process and low cost, and can obtain oxidation zinc crystals with high quality and large size and control the ZnO crystal size and the growing speed through changing the processing conditions.
Description
Technical field
The present invention relates to a kind of method of using chemical gas phase transmission method developing zinc oxide crystallite, belong to the crystalline material field.
Background technology
ZnO is a kind of multi-functional crystalline material that semi-conductor, luminous, piezoelectricity, electric light etc. are used that has.Its energy gap is 3.4eV under the room temperature, and the emission of corresponding UV-light can be developed the short-wavelength light electrical part, as ultraviolet light-emitting diode (UV-LED) and ultraviolet semiconductor laser (UV-LD).Zno-based LED estimates that brightness is the several times of GaN base because its exciton bind energy up to 60meV (GaN only is 21meV), has higher luminous efficiency, and cost only is 1/10 of a GaN base.In addition, be compared to the substrate material of the GaN base LED of current industrialization, the ZnO wafer has more advantage on performance, can predict that ZnO crystal can realize the popularization and application of semi-conductor white-light illuminating.Compare with other wide bandgap materials such as GaN, SiC, ZnO has aboundresources, cheap, chemistry and thermostability height, and better the radioresistance injury reinforcing ability also has clear superiority aspect the long lifetime device.Therefore, ZnO crystal all has important use to be worth in national economy and national defense construction.
Preparation methods such as melting method, hydrothermal method, vapor phase process are mainly adopted in the ZnO single crystal growing.Wherein, melt method for growing ZnO crystal condition harshness, the equipment cost height, crystal yield is low; Hydrothermal method can grow large-sized ZnO monocrystalline as a kind of comparatively sophisticated ZnO method for monocrystal growth, and growth cycle is long, danger is high, introduce metallic impurity (K easily but exist
+, Li
+) wait obvious deficiency, restricted the practicalization of ZnO monocrystalline.
The gas phase ratio juris is the material that utilizes vapour pressure bigger, make its devaporation become a kind of method of crystalline under suitable condition, be suitable for growing semiconductor crystals, when having avoided melting method, Hydrothermal Growth to the pollution of raw material, improved crystalline purity and quality, this is even more important to semiconductor material.Compare with hydrothermal method, flux method, the ZnO method of vapor-phase growing has remarkable advantages.At first, this method has overcome that mineralizer pollutes crystalline in fusing assistant in the flux method, the hydrothermal method, and crystal purity is significantly improved; A solid aerosphere face is relatively stable during vapor phase growth, and crystal morphology is controlled easily, and process of growth stress is little, and defect concentrations in crystals is low, and crystal mass is good, and these are extremely important as substrate material to ZnO; Secondly, the growth apparatus that this method is used is simpler, and growth temperature is low, has avoided the pyrolytic decomposition of ZnO; Because crystal growth grows in sealed tube, no significant loss, raw material can 100% be converted into monocrystalline, no obnoxious flavour discharge in the process of growth, Wen He growth conditions makes vapor phase process be easier to form the commercialization industrial scale in addition, and is more favourable to industrialization.
But, owing to the micromechanism research of the basic physical chemistry problem that relates to crystal growth, crystal growth seldom, the gaseous component in the growth system, dividing potential drop, mass transport process are not related to.Therefore, there is major defect in former vapor phase growth ZnO crystal method.Aspects such as outstanding behaviours can not continue growth at crystal, and crystal mass is low.Present method is controlled ampoule internal pressure and each partial component pressure in raw material processing, the process of growth on the basis of research vapor phase process ZnO crystal growth mechanism, has improved crystal mass, obtains the large size single crystal body of sustainable growth.
Summary of the invention
The purpose of this invention is to provide a kind of method of obtaining high crystalline quality, large size, highly purified Zinc oxide single crystal body.
Zincite crystal diameter provided by the present invention can reach 2 inches, and thickness can reach 1 centimetre.The crystalline size size depends on seed crystal size and growth time length.
The method of chemical gas phase transmission method developing zinc oxide crystallite provided by the present invention comprises the steps:
1) extension with cleaning has the sapphire of gan (or zinc oxide) single crystalline layer or zinc oxide (0001) wafer to be positioned over clean quartz ampoule bottom.
2) with closely knit high-purity ZnO block and catalyst carbon or graphite by 40: 1-100: 1 mass ratio is positioned over quartz ampoule, vacuum-sealing together.Vacuum tightness can＜10Pa.High-purity ZnO block can be through high pressure compacting and sintering.
3) quartz ampoule is put into process furnace.
4) at first slowly heat up (3 minutes/℃-5 minutes/℃), feed end and seed crystal end are remained on respectively between 1000-1150 ℃ and 950-1100 ℃, and the control temperature difference is reacted and carried out 1-30 days 10-50 ℃ of scope.
5) after reaction finishes, after slowly being cooled to 900 ℃ more than 24 hours, cool to room temperature with the furnace.
6) take out crystal, oxygen atmosphere was annealed 24 hours down, and annealing temperature is 800-1100 ℃.
The invention has the advantages that: with carbon or graphite is catalyzer, and the closely knit block of ZnO is that raw material is good through ZnO single crystal crystal purity height, the crystalline quality of gas phase process growth.Its growth technique is simple, cost is low, is easy to industrialization, can control the crystalline size by changing ampoule structure, material quantity and seed crystal size, to satisfy the different demands to ZnO crystal.
Description of drawings
Fig. 1 is the used quartz ampoule synoptic diagram of gas phase transmission method developing ZnO monocrystal.
Fig. 2 is for using vapor phase process, and being grown in extension has ZnO crystal blank on the ZnO single crystal film Sapphire Substrate.
Fig. 3 is for using vapor phase process, and being grown in extension has the ZnO wafer after annealing and polishing on the ZnO single crystal film Sapphire Substrate.
Fig. 4 is the X ray rocking curve of ZnO single-crystal wafer (0001) face center.
Fig. 5 is the photoluminescence spectrum of ZnO crystal center before and after the annealing.
Fig. 6 is for using vapor phase process, and with extension GaN single crystal film sapphire wafer being arranged is substrate, the ZnO wafer (unannealed) of acquisition.
Embodiment
Embodiment 1
There are 1.5 inches sapphire wafers of zinc oxide single crystalline layer to put into clean quartz ampoule bottom extension.12g high-purity (4N) ZnO ceramic block is placed the quartz ampoule top together as raw material and 0.24g carbon dust.Diffusion pump after being evacuated to 1Pa seals ampoule.Ampoule is placed horizontally in the two warm area tubular ovens then.Make seed crystal end and feed end all reach 800 ℃ after heating in 8 hours, after be warming up to 1050 ℃ at seed crystal end in 12 hours, 1020 ℃ of feed end are incubated 10 days after naturally cooled to room temperature after being cooled to 900 ℃ in 24 hours.
Fig. 1 is a gas phase transmission method ZnO single crystal growing synoptic diagram, and the gained crystal is a tawny, and diameter is 32mm, thickness 4mm (as shown in Figure 2).Oxygen atmosphere slowly was warming up to 1000 ℃ of constant temperature 24 hours for following 0.5 ℃/minute, reduced to room temperature for 1 ℃/minute.Through this process gained crystal is the water white transparency shape, and polishing back wafer as shown in Figure 3.The double crystal diffraction analytical results shows that wafer is the monocrystalline of [0001] crystal orientation growth, and rocking curve half-breadth height (FWHM) is 47arcsec (as shown in Figure 4), shows that crystal has good crystalline quality.Fig. 5 is a crystalline PL spectrum before and after the annealing, can observe the ultraviolet emission peak that ZnO has three glow peak: 375nm, green emission peak about 520nm and the red emission peak about 650nm.Wherein, ultraviolet intrinsic luminescence peak is found near side (ns) emission by force and not, and green glow and red emission peak value are less, and this illustrates that all crystal impurity and defective are few, crystal structure quality height.Ultraviolet peak, annealing back strengthens, other peak value weakens, and shows that annealing back crystal mass further improves.
Embodiment 2
Seed crystal is replaced by 2 inches sapphire wafers that extension has the gallium nitride single crystal layer, and other condition is identical.The gained crystal is a light red, and diameter is 46mm, thickness 2.5mm (Fig. 6).
Claims (5)
1. the method for a chemical gas phase transmission method developing zinc oxide crystallite is characterized in that comprising the steps:
(1) sapphire or zinc oxide (0001) wafer with cleaning is positioned over clean quartz or metal ampoule bottom;
(2) with closely knit high-purity ZnO block and catalyst carbon or graphite by mass ratio 40: 1-100: 1 is positioned over quartz or metal ampoule, vacuum-sealing together;
(3) quartz ampoule is put into process furnace, slowly heating up remains between 1000-1150 ℃ and 950-1100 ℃ feed end and seed crystal end respectively, and the control temperature difference is reacted and carried out 1-30 days 10-50 ℃ of scope;
(4) after reaction finishes, after slowly being cooled to 900 ℃ more than 24 hours, cool to room temperature with the furnace;
(5) take out crystal, oxygen atmosphere annealing down, annealing temperature is 800-1100 ℃.
2. by the method for the described a kind of chemical gas phase transmission method developing zinc oxide crystallite of claim 1, it is characterized in that described sapphire wafer extension has gan or Zinc oxide single crystal layer.
3. by the method for the described a kind of chemical gas phase transmission method developing zinc oxide crystallite of claim 1, the condition that it is characterized in that described slow intensification is 3 minutes/℃-5 minutes/℃.
4. by the method for the described a kind of chemical gas phase transmission method developing zinc oxide crystallite of claim 1, it is characterized in that described vacuum-packed vacuum tightness＜10Pa.
5. by the method for one of claim 1-4 described a kind of chemical gas phase transmission method developing zinc oxide crystallite, it is characterized in that described closely knit high-purity ZnO block is through high pressure compacting and the closely knit block of agglomerating zinc oxide.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103046133A (en) * | 2011-10-17 | 2013-04-17 | 中国科学院福建物质结构研究所 | Annealing method for increasing resistivity of ZnO single crystal |
| CN107978657A (en) * | 2017-12-04 | 2018-05-01 | 中国科学院长春光学精密机械与物理研究所 | Zinc oxide/gallium oxide nucleocapsid micro wire and preparation method thereof, solar blind ultraviolet detector |
| CN109280969A (en) * | 2018-11-14 | 2019-01-29 | 中国工程物理研究院激光聚变研究中心 | A kind of gas phase crystal growth method and zincite crystal |
| CN109913946A (en) * | 2018-04-18 | 2019-06-21 | 清华-伯克利深圳学院筹备办公室 | A kind of method that vapor transportation method prepares black arsenic phosphorus monocrystalline |
| CN115074831A (en) * | 2022-06-16 | 2022-09-20 | 山东大学 | Bulk bismuth oxybromide single crystal and growth method and application thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004315361A (en) * | 2003-04-03 | 2004-11-11 | Tokyo Denpa Co Ltd | Zinc oxide single crystal |
| CN100401602C (en) * | 2003-11-27 | 2008-07-09 | 中国科学院福建物质结构研究所 | Zinc oxide bluish violet light semiconductor growth using liquid phase epitaxial method |
| CN1317427C (en) * | 2004-07-23 | 2007-05-23 | 清华大学 | Process for growing zine oxide monocrystal by hot water method |
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2006
- 2006-12-11 CN CN200610119425A patent/CN100580155C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103046133A (en) * | 2011-10-17 | 2013-04-17 | 中国科学院福建物质结构研究所 | Annealing method for increasing resistivity of ZnO single crystal |
| CN107978657A (en) * | 2017-12-04 | 2018-05-01 | 中国科学院长春光学精密机械与物理研究所 | Zinc oxide/gallium oxide nucleocapsid micro wire and preparation method thereof, solar blind ultraviolet detector |
| CN109913946A (en) * | 2018-04-18 | 2019-06-21 | 清华-伯克利深圳学院筹备办公室 | A kind of method that vapor transportation method prepares black arsenic phosphorus monocrystalline |
| CN109280969A (en) * | 2018-11-14 | 2019-01-29 | 中国工程物理研究院激光聚变研究中心 | A kind of gas phase crystal growth method and zincite crystal |
| CN109280969B (en) * | 2018-11-14 | 2020-10-13 | 中国工程物理研究院激光聚变研究中心 | Gas phase crystal growth method and zinc oxide crystal |
| CN115074831A (en) * | 2022-06-16 | 2022-09-20 | 山东大学 | Bulk bismuth oxybromide single crystal and growth method and application thereof |
| CN115074831B (en) * | 2022-06-16 | 2024-05-10 | 山东大学 | Bulk bismuth oxybromide monocrystal and growth method and application thereof |
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Effective date of registration: 20110718 Address after: 1295 Dingxi Road, Shanghai, No. 200050 Co-patentee after: Research and Design center, Shanghai Institute of Ceramics Patentee after: Shanghai Silicates Institute, the Chinese Academy of Sciences Address before: 1295 Dingxi Road, Shanghai, No. 200050 Patentee before: Shanghai Silicates Institute, the Chinese Academy of Sciences |
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