CN101193500B - Pattern forming method and circuit board - Google Patents
Pattern forming method and circuit board Download PDFInfo
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- CN101193500B CN101193500B CN200710196625.XA CN200710196625A CN101193500B CN 101193500 B CN101193500 B CN 101193500B CN 200710196625 A CN200710196625 A CN 200710196625A CN 101193500 B CN101193500 B CN 101193500B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J3/00—Typewriters or selective printing or marking mechanisms characterised by the purpose for which they are constructed
- B41J3/28—Typewriters or selective printing or marking mechanisms characterised by the purpose for which they are constructed for printing downwardly on flat surfaces, e.g. of books, drawings, boxes, envelopes, e.g. flat-bed ink-jet printers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
Abstract
The invention provides a method for forming a pattern with a high density and high precision in a short time, and a green sheet. A green sheet (4G) is heated by a rubber heater (H) disposed on an objective table (24). Then, the green sheet is heated to a temperature more than a temperature of the functional fluid during discharging and less than a boiling point of the droplet. In the heating condition, the droplet discharge nozzle (30) discharges droplets onto the green sheet (4G). Droplets dropped on the green sheet (4G) dries quickly without generating bump.
Description
Technical field
The present invention relates to a kind of pattern formation method and circuit substrate.
Background technology
Thereby the known pattern (for example patent documentation 1) that in the past used droplet ejection apparatus functional liquid to be formed wire as the drop ejection on substrate.
Usually droplet ejection apparatus possess the substrate of mounting on objective table, the functional liquid that will contain functional material as drop to the droplet discharging head of substrate ejection and the mechanism that substrate (objective table) and droplet discharging head are relatively moved two-dimensionally.Then, will be from the droplet configuration of droplet discharging head ejection in the optional position of substrate surface.At this moment, for each drop that is disposed at substrate surface successively, can be by disposing drop successively, and the moistening spreading range of this drop is overlapped each other, form the linear pattern that substrate surface is seamlessly covered by functional liquid.
But, the relative functional liquid of substrate surface has under the situation of lyophobicity, compares with the power that functional liquid pulls mutually with substrate surface, and the power that pulls mutually under surface tension between the drop that contacts with each other is stronger, functional liquid takes place concentrate on local phenomenon.If such concentration of local takes place, the problem that the part of substrate surface is exposed owing to the functional liquid disappearance under the poorest situation, can take place in substrate surface covering function liquid equably not then.
In addition, in order to utilize droplet ejection apparatus to carry out the printing of needs such as production code member to part, proposed part is heated to about about 60 ℃ in advance, thereby made before oozing out the solvent seasoning of this drop form the technology (patent documentation 2) of the pattern that does not ooze out at the drop of configuration.
And then, make the ejection solvent promptly dry more than 60 ℃ thereby also proposed substrate temperature is heated to, the distance piece (patent documentation 3) in the space between liquid crystal cell between substrate and the substrate is adjusted in configuration.
Patent documentation 1: the spy opens the 2005-34835 communique
Patent documentation 2: the spy opens the 2004-306372 communique
Patent documentation 3: the spy opens flat 11-281985 public affairs and opens
But 3 rate of dryings that are conceived to the drop of land of patent documentation 2 and patent documentation are not considered the performance of the drop after the land.In other words, under the high situation of substrate temperature, thereby bumping does not form pattern on substrate phenomenon takes place in the drop that land take place in land, has problems in the formation of the wiring pattern that requires to form the meticulous pattern of high density height.
In addition, owing to do not consider the ejection time of each drop of configuration successively, so it is still strong that the power that pulls mutually under surface tension takes place between the drop sometimes, thereby functional liquid concentrates on local phenomenon, in the formation of the wiring pattern that requires to form high meticulous pattern, have problems.
Summary of the invention
The present invention proposes in order to address the above problem just, and its purpose is to provide a kind of pattern formation method and circuit substrate that can form the meticulous pattern of high density height at short notice.
Thereby pattern formation method of the present invention is to spray the pattern formation method of the drop of the functional liquid that contains functional material at the surface of described matrix formation pattern to matrix successively, wherein, constitute by step as described below: the first step of the temperature of the boiling point of forming more than the temperature of the functional liquid the when surface temperature of described matrix is heated to ejection and less than the liquid that contains in the functional liquid; Described matrix is being heated under the state of described surface temperature, spray the drop of described functional liquid to described matrix, thereby form second step of pattern, described functional liquid is the liquid that the particle as the solid constituent of functional material is disperseed, dry by the liquid that comprises in the drop of the described functional liquid that described matrix sprays is formed, at the pattern of described matrix surface formation based on described solid.。
Utilize pattern formation method of the present invention, because land bumping can not take place and can be immediately dry in the drop on the substrate on matrix, so can form the high meticulous pattern of high density at short notice.
In this pattern formation method, in the described first step, according to the surface temperature of described matrix become make land in the solid component concentration of the peripheral part of the drop of described matrix than reach capacity the quickly mode of temperature of concentration of the solid component concentration of central portion, heat described matrix.
Utilize this pattern formation method, formerly the relative matrix of drop begins to become stationary state from peripheral part, so formerly the outer shape of drop when land can not deform.As a result, can form the high meticulous pattern of high density.
In this pattern formation method, when the ejection drop was formed on the pattern that forms in described second step, the part between the adjacent drops of land was overlapping at least.
Utilize this pattern formation method, the high density height forms continuous pattern meticulously at short notice.
In this pattern formation method, with land when the part of the drop formerly of described matrix sprays drop overlappingly, after the external diameter of the drop of described front land no longer changes, make its ejection again.
Utilize this pattern formation method, formerly the relative matrix of drop becomes stationary state, so can not attracted by the drop of back.
In this pattern formation method, time till the external diameter of drop that described second step is obtained the land of described relatively surface temperature in advance no longer changes, with the ejection blanking time of described time,, spray drop successively with the described interval that sprays more than blanking time as described drop.
Utilize this pattern formation method, after the relative matrix of drop becomes stationary state really, spray the drop of back again, destroy the shape of pattern so can not pull mutually between the drop.
In this pattern formation method, the easy fired sheet of described matrix for being made of ceramic particle and resin, described functional liquid are the liquid that makes as the metallic dispersion of functional material.
Utilize this pattern formation method, can on the porousness substrate, form the pattern that constitutes by metal film.
In this pattern formation method, the boiling point that the liquid that contains in the functional liquid is formed is that liquid is formed the boiling point that the minimum liquid of mid-boiling point is formed.
Utilize this pattern formation method, can make drop on matrix, bumping not take place and make its drying really.
In this pattern formation method, the boiling point that the liquid that contains in the functional liquid is formed is: form the boiling point that the minimum liquid of mid-boiling point is formed for the liquid that bumping takes place influences the concentration that pattern forms in liquid is formed.
Utilize this pattern formation method, can carry out relative drop optimum and effective dry.
Circuit substrate of the present invention is that circuit element is installed, and is formed with the circuit substrate of relative this mounted circuit element for the wiring of electrical connection, and it forms described wiring with any described pattern formation method in the claim 1～8.
Utilize circuit substrate of the present invention, can further boost productivity.
Description of drawings
Fig. 1 is the side cross-sectional view of indication circuit module.
Fig. 2 is the overall perspective view of expression droplet ejection apparatus.
Fig. 3 is droplet discharging head is observed in expression from the tellite side a upward view.
Fig. 4 is the major part side cross-sectional view of expression droplet discharging head.
Fig. 5 is electric square (block) circuit diagram that is used to illustrate the electric structure of droplet ejection apparatus.
Fig. 6 (a)～(e) is used to illustrate the schematic diagram of the performance of the drop of land, (a) be soon the figure of shape of drop after the expression land, (b) be the also figure of the shape of the drop of the state of the moistening expansion of while outward direction of expression drying, (c) be the expression drop enters the drop of stationary state on tellite the figure of shape, (d) be the figure of the shape of the expression drop that enters the state that the drying of the thickness direction under the stationary state has been dried, (e) be the figure of the shape of the drop under the state of representing to be dried.
Fig. 7 is the schematic diagram that is used to illustrate the effect that pattern forms.
Fig. 8 (a)～(d) is the ejection figure in proper order of the drop of expression pattern formation.
Fig. 9 is that the ejection solvent is the figure of the wiring pattern that forms of the drop of the metallic ink liquid of the tetradecane on glass substrate, (a) and (b) is respectively the figure of the wiring pattern that forms after the condition of temperature, ejection blanking time of change glass substrate.
Figure 10 is that the ejection solvent is the figure of the wiring pattern that forms of the drop of the metallic ink liquid of the tetradecane on glass substrate, (a) and (b) is respectively the figure of the wiring pattern that forms after the condition of temperature, ejection blanking time of change glass substrate.
Figure 11 is that the ejection solvent is the figure of the wiring pattern that forms of the drop of the metallic ink liquid of the tetradecane on glass substrate, (a) and (b) is respectively the figure of the wiring pattern that forms after the condition of temperature, ejection blanking time of change glass substrate.
Figure 12 (a)～(f) is that expression forms the figure of pattern in proper order with other.
Among the figure, 1-circuit module, 2-LTCC multilager base plate, 4-easy fired substrate, 4G-be as the tellite of matrix, the 6-internal wiring, the 20-droplet ejection apparatus, 23-objective table, 30-droplet discharging head, the 50-control device, F-is as the metallic ink liquid of functional liquid, Fb-drop, PZ-piezoelectric element, the P-pattern, the H-rubber heater.
Embodiment
Below according to Fig. 1～Fig. 7, describe the present invention being embodied in execution mode as described below, that is: as LTCC multilager base plate (LTCC: the wiring pattern that formation will be described go up to be installed on a plurality of easy fired substrates (tellite) of this LTCC multilager base plate of formation of the circuit module that semiconductor chip forms low temperature co-fired one-tenth pottery (Low Temperature Co-fired Ceramics) multilager base plate).
At first, the circuit module that installation semiconductor chip on the LTCC multilager base plate is formed describes.The sectional view of Fig. 1 indication circuit module 1, circuit module 1 have the semiconductor chip 3 that forms tabular LTCC multilager base plate 2 and be formed by connecting in the upside wire-bonded of this LTCC multilager base plate 2.
LTCC multilager base plate 2 is the duplexers that form a plurality of easy fired substrates 4 of sheet.Each easy fired substrate 4 is respectively the sintered body of glass ceramics based material (for example mixture of ceramic component such as glass ingredient such as borosilicate soda acid oxide and aluminium oxide), forms its thickness with hundreds of μ m.
On each easy fired substrate 4, suitably form various circuit elements 5 such as resistive element, volume element, coil part respectively based on circuit design, be electrically connected the internal wiring 6 of each circuit element 5, be a plurality of vias (via hole) 7 with predetermined hole diameter (for example 20 μ m) of superposition via (stack via) structure, thermal hole (thermal via) structure and be filled in the conducting wiring 8 of this via 7.
Each internal wiring 6 on each easy fired substrate 4 is respectively the sintered body of the metal particle of silver or silver alloy etc., utilizes the wiring pattern formation method of utilizing droplet ejection apparatus 20 shown in Figure 2 to form.
Fig. 2 is the overall perspective view of explanation droplet ejection apparatus 20.
In Fig. 2, droplet ejection apparatus 20 has the base station 21 that forms rectangular shape.The a pair of guiding groove 22 that formation is extended along its major diameter direction (the Y direction of arrow) on base station 21.Above guiding groove 22, possesses the objective table 23 that moves to the Y direction of arrow and the anti-Y direction of arrow along guiding groove 22.Formation mounting portion 24 on objective table 23, the easy fired substrate 4 before mounting is burnt till (is designated hereinafter simply as tellite 4G.)。Relatively objective table 23 location are in the tellite 4G of carrying state and fixing mounting portion 24, make it to the Y direction of arrow and anti-Y direction of arrow conveying tellite 4G.On described objective table 23, set rubber heater H.Rubber heater H is heated to set point of temperature with mounting above the tellite 4G of mounting portion 24 whole.
Base station 21 set up across with the door type guiding elements 25 of the direction (the X direction of arrow) of Y direction of arrow quadrature.Upside at guiding elements 25 sets the black liquid bath 26 that extends to the X direction of arrow.The metallic ink liquid F that China ink liquid bath 26 stores as functional liquid (is designated hereinafter simply as shower nozzle with the pressure of stipulating to droplet discharging head.) the 30 metallic ink liquid F that supply with to store.Then, the metallic ink liquid F that supplies with to shower nozzle 30 becomes drop Fb (with reference to Fig. 4) from shower nozzle 30, becomes the drop to tellite 4G ejection.
Metallic ink liquid F can use will as the metallic of functional material for example particle diameter be scattered in the disperse system metallic ink liquid of solvent for the metal particle of number nm as functional material.
As the metal particle that uses among the metallic ink liquid F, for example except gold (Au), silver (Ag), copper (Cu), aluminium (Al), palladium (Pb), manganese (Mn), titanium (Ti), tantalum (Ta) and nickel materials such as (Ni), can also use their oxide and the particulate of superconductor etc.The particle diameter of metal particle is preferably more than the 1nm, below the 0.1 μ m.If greater than 0.1 μ m, then may stop up at the nozzle N of shower nozzle 30.In addition, if less than 1nm, then the volume ratio of the relative metal particle of dispersant becomes big, and the organic ratio in the film that obtains becomes too much.
As decentralized medium,, be not particularly limited so long as can disperse above-mentioned metal particle and the decentralized medium that do not condense gets final product.For example except water solvent, all right illustration methyl alcohol, ethanol, propyl alcohol, alcohols such as butanols, normal heptane, normal octane, decane, dodecane, the tetradecane, toluene, dimethylbenzene, cumene, durene, indenes, cinene, tetrahydronaphthalene, decahydronaphthalenes, hydrocarbon system compounds such as cyclohexyl benzene, ethylene glycol in addition, diethylene glycol (DEG), triethylene glycol, glycerine, 1, polyalcohols such as ammediol, polyethylene glycol, glycol dimethyl ether, ethylene glycol diethyl ether, the Ethylene Glycol Methyl ethylether, diethylene glycol dimethyl ether, diethyl carbitol, the diethylene glycol (DEG) methyl ethyl ether, 1, the 2-dimethoxy-ethane, two (2-methoxy ethyl) ether, to ether based compounds such as dioxanes, and then propylene carbonate, gamma-butyrolacton, the N-N-methyl-2-2-pyrrolidone N-, dimethyl formamide, methyl-sulfoxide, cyclohexanone, ethyl lactate isopolarity compound.Wherein, the point of the easy degree that is suitable for from the stability of the dispersiveness of particulate and dispersion liquid or to drop ejection method, preferred water, alcohols, hydrocarbon system compound, ether based compound as preferred decentralized medium, can be enumerated water, hydrocarbon system compound.
For example can consider the metallic ink liquid F that dispersion silver (Ag) particle forms in the water solvent that is made of water (100 ℃ of boiling points) 40%, ethylene glycol (198 ℃ of boiling points) 40%, polyethylene glycol #1000 (168 ℃ of decomposition temperatures) 30%.In addition, it is also conceivable that the metallic ink liquid F that dispersed metal particulate (particles such as Au, Ag, Ni, Mn) forms in the solvent that is made of the tetradecane (253 ℃ of boiling points).
Make the part evaporation of solvent or decentralized medium if the drop Fb of metallic ink liquid F is heated, make its surperficial outer rim tackify.In other words, peripheral part is than solid constituent (particle) concentration of the central portion concentration that reaches capacity quickly, so begin tackify from the outer rim on surface.Outer rim is stopped self moistening expansion (adhering to (pining) firmly) along the face direction of tellite 4G by the metallic ink liquid F of tackify.
Fig. 6 (a)～(e) be used to illustrate until land in the drop Fb of tellite 4G dry and be fixed in tellite 4G till the figure of performance.Shown in Fig. 6 (b), the drop Fb of land soon hemispheric shape after the land shown in Fig. 6 (a) begins dry and little by little moistening expansion simultaneously.At this moment, thus drop Fb evaporating solvent makes the outer rim tackify on surface and moistening expansion simultaneously.Then, viscosity further increases, if the drop Fb shown in Fig. 6 (c) stops moistening expansion, then after the drop Fb as Fig. 6 (d) (e) shown in, become obvious in the drying of thickness direction.
Then, the metallic ink liquid F of the state that adheres to firmly shown in Fig. 6 (c) is fixed in tellite 4G, even duplicate printing, also tellite 4G becomes stationary state relatively, the external diameter of drop Fb does not change, so can not attracted by the drop Fb of back.
On guiding elements 25,, form the pair of guide rails up and down 28 of extending to the X direction of arrow at the roughly whole width of its X direction of arrow.On the pair of guide rails 28 balladeur train 29 is being installed up and down.Balladeur train 29 is guided by guide rail 28 and moves to the X direction of arrow and the anti-X direction of arrow.Balladeur train 29 is equipped with droplet discharging head 30.
Fig. 3 represents to observe from tellite 4G side the figure of shower nozzle 30, and Fig. 4 represents the major part sectional view of shower nozzle.Downside at shower nozzle 30 possesses nozzle plate 31.Nozzle plate 31 forms top (nozzle face 4Ga) almost parallel of (nozzle forms face 31a) and tellite 4G below it.Nozzle plate 31 tellite 4G be positioned at shower nozzle 30 under the time, the distance (printhead spacing (platen gap)) that nozzle is formed between face 31a and the ejection face 4Ga remains on predetermined distance (for example 600 μ m).
In Fig. 3, (nozzle forms face 31a) forms a pair of nozzle rows NL that constitutes along a plurality of nozzle N of Y direction of arrow arrangement below nozzle plate 31.On a pair of nozzle rows NL, form 180 nozzle N of each inch respectively.Wherein, in Fig. 3, for convenience of explanation, put down in writing each row and have only 10 nozzle N.
In a pair of nozzle rows NL, observe from the Y direction of arrow, each nozzle N of a nozzle rows NL inserts between each nozzle N of another nozzle rows NL.That is, shower nozzle 30 is in the Y direction of arrow, and each inch has 180 a * 2=360 nozzle N (maximum exploring degree is 360dpi).
In Fig. 4, link supply pipe 30T as stream at the upside of shower nozzle 30.Supply pipe 30T is adapted to the Z direction of arrow and extends, to the metallic ink liquid F of shower nozzle 30 supplies from black liquid bath 26.
Upside at each nozzle N forms the chamber (cavity) 32 that is communicated with supply pipe 30T.The metallic ink liquid F from supply pipe 30T is accommodated in chamber 32, supplies with metallic ink liquid F to the nozzle N of correspondence.Thereby paste the oscillating plate 33 that direction vibration up and down enlarges and dwindle the volume in the chamber 32 at the upside in chamber 32.Set the piezoelectric element PZ of corresponding nozzle N at the upside of oscillating plate 33.Piezoelectric element PZ direction up and down shrinks and elongation, thereby makes oscillating plate 33 direction vibration up and down.The oscillating plate 33 of direction vibration makes metallic ink liquid F become the drop Fb of given size up and down, from the nozzle N ejection of correspondence.The drop Fb that has sprayed is to the anti-Z direction of arrow leap of the nozzle N of correspondence, and land are in the ejection face 4Ga of tellite 4G.
The electric structure of the droplet ejection apparatus 20 that constitutes as mentioned above then, is described according to Fig. 5.
In Fig. 5, control device 50 has CPU50A, ROM50B, RAM50C etc.Control device 50 is carried out the transport process of balladeur train 29, the drop ejection processing of shower nozzle 30, the heat treated of rubber heater H etc. according to the various data and the various control program of storage.
Data bitmap BD is the data that open or close that corresponding every value (0 or 1) is stipulated each piezoelectric element PZ.Data bitmap BD stipulates whether connect up with the data of drop Fb to each the position ejection described on the plane (ejection face 4Ga) by shower nozzle 30 (each nozzle N).That is, data bitmap BD is used for forming the data of position ejection wiring with drop Fb to the target of the internal wiring 6 of the ejection face of being specified in 4Ga.
X-axis motor drive circuit 52 is connected with control device 50.Control device 50 is to X-axis motor drive circuit 52 output drive control signal.52 responses of X-axis motor drive circuit make the X-axis motor MX forward or reverse of mobile balladeur train 29 from the drive control signal of control device 50.The Y-axis motor drive circuit is connected with control device 50.Control device 50 is to Y-axis motor drive circuit 53 output drive control signal.53 responses of Y-axis motor drive circuit make the Y-axis motor MY forward or reverse of moving stage 23 from the drive control signal of control device 50.
Rubber heater drive circuit 55 is connected with control device 50.Control device 50 is to rubber heater drive circuit 55 output drive control signal.55 responses of rubber heater drive circuit drive rubber heater H from the drive control signal of control device 50, and the tellite 4G heating of mounting on objective table 23 is controlled to the temperature of predesignating.The temperature of the boiling point of forming more than the temperature of the metallic ink liquid F the when temperature of the tellite 4G that predesignates in the present embodiment, is controlled in from shower nozzle 30 ejection and less than the liquid that contains the metallic ink liquid F (forming the minimum temperature of mid-boiling point) less than liquid.In other words, more than the temperature of metallic ink liquid F when being heated to tellite 4G from shower nozzle 30 ejections, during ejection at shower nozzle 30 drying does not take place, drop Fb after the land is heated apace, drying, simultaneously tellite 4G is heated to boiling point, thereby does not make the drop Fb after the land on tellite 4G, bumping take place less than drop Fb.
For example, shower nozzle 30 is when being 27 ℃ of room temperatures, under the situation of the metallic ink liquid F that forms for dispersion silver (Ag) particle in the water solvent that constitutes by water 40%, ethylene glycol 40%, polyethylene glycol 30%, because the boiling point of water is a minimum boiling point for 100 ℃, so the temperature of tellite 4G is controlled in more than 27 ℃, less than 100 ℃.In addition, under the situation of the metallic ink liquid F that forms for dispersion silver (Ag) particle in the solvent that constitutes by the tetradecane, because the boiling point of the tetradecane is 253 ℃, thus if do not contain other solvents, then the temperature of tellite 4G be controlled in more than 27 ℃, less than 253 ℃.
Then, the formation method to the wiring pattern of the tellite 4G that utilizes above-mentioned droplet ejection apparatus 20 describes.
As shown in Figure 2, mounting tellite 4G on objective table 23, the ejection face 4Ga of making becomes upside.At this moment, objective table 23 is to the anti-Y direction of arrow configuration tellite 4G of balladeur train 29.This tellite 4G is formed with via 7, forms conducting wiring 8 in this via 7, forms internal wiring 6 in this ejection face 4Ga.
From this state, be used to utilize drop Fb to form the data bitmap BD of the wiring pattern of internal wiring 6 to control device 50 inputs from input/output unit 51.Control device 50 storages are from the data bitmap BD that is used to form internal wiring 6 of input/output unit 51.At this moment, control device 50 drives the rubber heater H that is arranged at objective table 23 via rubber heater drive circuit 55, mounting similarly is controlled at the temperature of regulation in the tellite 4G of objective table 23 integral body.That is the temperature of the boiling point of forming more than the temperature of the metallic ink liquid F when, tellite 4G is controlled so as to from shower nozzle 30 ejection and less than the liquid that contains the metallic ink liquid F (forming the minimum temperature of mid-boiling point) less than liquid.
For example, shower nozzle 30 is when being 27 ℃ of room temperatures, under the situation of the metallic ink liquid F that forms for dispersion silver (Ag) particle in the water solvent that constitutes by water 40%, ethylene glycol 40%, polyethylene glycol 30%, because the boiling point of water is a minimum boiling point for 100 ℃, so the temperature of tellite 4G is controlled in more than 27 ℃, less than 100 ℃.In addition, under the situation of the metallic ink liquid F that forms for dispersion silver (Ag) particle in the solvent that constitutes by the tetradecane, because the boiling point of the tetradecane is 253 ℃, thus if do not contain other solvents, then the temperature of tellite 4G be controlled in more than 27 ℃, less than 253 ℃.
Then, in order to make shower nozzle 30 position directly over the regulation of the X direction of arrow by tellite 4G, control device 50 drives Y-axis motor MY via Y-axis motor drive circuit 53, carries objective table 23.Then, control device 50 drives X-axis motor MX via X-axis motor drive circuit 52, the scanning of beginning shower nozzle 30 (toward moving).
If the scanning of control device 50 beginning shower nozzles 30 (toward moving) then produces pattern formation drive signal SI based on data bitmap BD, form with control signal SI and driving voltage COM to head drive circuit 54 output patterns.That is, control device 50 is via each piezoelectric element PZ of head drive circuit 54 drive controlling, when each shower nozzle 30 is positioned at the landing positions that is used to form internal wiring 6, from selecteed nozzle N ejection drop Fb.
Then, in the present embodiment, shown in Fig. 7 and Fig. 8 (a)～(d), each drop Fb that will spray successively land in the landing positions that is used to form corresponding internal wiring 6.
Particularly, in the present embodiment, in order to form pattern, the drop Fb of front land, configuration becomes fixing (the adhering to firmly) state (stopping the state of the moistening expansion of self) shown in Fig. 6 (c) for thereby the dry tellite 4G relatively of part takes place, relative this drop Fb formerly, after the land from shower nozzle 30 ejection overlap for it in the drop Fb of tellite 4G, spray to the position of among Fig. 7 and Fig. 8 (a), representing from shower nozzle 30 with 1 chain-dotted line.
In other words, from ejection time interval (timing) of the drop Fb of shower nozzle 30 ejection by drop Fb from shower nozzle 30 ejections and fixing (adhering to firmly) in tellite needed time of (green sheet) 4G with after shower nozzle 30 sprays drop Fb formerly, the part of ensuing drop Fb reaches and the overlapping needed traveling time in ejection position of drop Fb formerly etc. is determined.Thereby, wait from the heating-up temperature of tellite 4G, the translational speed of shower nozzle 30 etc. with experiment, preestablish the ejection time (ejection blanking time).
By the way, under the situation of the metallic ink liquid F that forms for dispersion silver (Ag) particle in the solvent that constitutes by the tetradecane, each dropping liquid is dripped weight be made as 5ng, with the temperature of tellite 4G set for respectively 27 ℃ room temperature (promptly, the temperature of metallic ink liquid F during from shower nozzle 30 ejection), 150 ℃, 200 ℃, experiment is obtained from land to the regular time.
As a result, under the situation of room temperature (27 ℃) until being fixed as 3000 μ sec, being under 150 ℃ the situation until being fixed as 495 μ sec, being under 200 ℃ the situation until being fixed as 330 μ sec.Thereby, tellite 4G is heated to being significantly shorter than a side who is 27 ℃ room temperature until regular time less than a side of boiling point.
Like this, in this case, be to be that the temperature of 495 μ sec or tellite 4G is to be these numerical value of 330 μ sec under 200 ℃ the situation under 150 ℃ the situation based on temperature at tellite 4G, set the ejection time (ejection blanking time).
Thereby, to the X direction of arrow toward moving the time during with regular time (ejection blanking time) ejection drop Fb, because tellite Fb heats with above-mentioned condition, so the front land begin drying immediately in the drop Fb of tellite 4G, by dry apace.
Then, shown in Fig. 8 (b), when drop Fb became relative tellite 4G for fixing state, overlapping in order to make its part enter the drop Fb of this stationary state relatively, the drop Fb land of back also were configured in the position shown in 1 chain-dotted line of Fig. 8 (c).At this moment, the Fb of drop formerly that is in stationary state can not attracted by the drop Fb that land are configured to the partly overlapping back of one.In addition, be configured to the printed circuit substrate 4G heating of non-overlapping portions of the drop Fb of the partly overlapping back of one by land, so begin drying immediately, be dried apace, thereby become stationary state.Thereby the drop Fb of back can be by drop Fb attraction formerly.
As a result, shower nozzle 30 is moved to the X direction of arrow, the drop Fb in landing positions can not be offset from its landing positions owing to the land successively that form internal wiring 6, and is dried, so can form the wiring pattern P that is used for internal wiring 6 shown in Fig. 8 (d).And, because heating tellite 4G so the drop Fb of land is dry apace and enter stationary state, so can shorten the ejection time of the drop Fb of back land, can be formed for the wiring pattern P of internal wiring 6 at short notice.And then the heating-up temperature of tellite 4G is controlled in the temperature less than the boiling point of drop Fb, so the drop Fb of land bumping can not take place and then can not form the wiring pattern P.
If shower nozzle 30 finishes from the scanning of the end to end of tellite 4G, then control device 50 makes shower nozzle 30 to the scanning of the X direction of arrow (toward moving (toward Move)), the first time drop Fb release the time, for the ejection of the reposition on the tellite 4G that is used to form internal wiring 6 drop Fb, drive Y-axis motor MY via Y-axis motor drive circuit 53, to the Y direction objective table 23 is carried ormal weight, make shower nozzle 30 then to anti-X direction of arrow scanning (returning).
If the scanning (returning (Complex Move)) of beginning shower nozzle 30, then control device 50 is with above-mentioned similarly based on data bitmap BD, via drive circuit 54, each piezoelectric element PZ of drive controlling, when each shower nozzle is positioned at the landing positions that is used to form internal wiring 6, from selecteed nozzle N ejection drop Fb.In this case, also same as described above, the front land are used for tellite 4G and just are heated in the drop Fb of tellite 4G, also are dried apace so begin drying immediately.Then, be stationary state if drop Fb becomes relative tellite 4G, then enter the drop Fb of this stationary state relatively, the drop Fb of back makes the one ground land configuration of overlapping.
Later carry out action as described below repeatedly, that is: make shower nozzle 30 to the X direction of arrow and anti-X direction of arrow back and forth movement, carry objective table 23 to the Y direction of arrow simultaneously, in the back and forth movement of shower nozzle 30, with time ejection drop Fb based on data bitmap BD.Like this, on tellite 4G, describe to utilize the wiring pattern P of internal wiring 6 of the drop Fb of land.
By the way, for the drop Fb of the metallic ink liquid F that disperses silver (Ag) particle in the solvent that constitutes by the tetradecane (253 ℃ of boiling points), thereby carried out changing condition that each dropping liquid drips temperature, ejection blanking time of the glass substrate of weight when being 5ng forms wiring patterns P on glass substrate experiment.Fig. 9, Figure 10, Figure 11 are the figure of each wiring patterns P of obtaining after the condition of temperature, ejection blanking time of this glass substrate of expression change.
It is that 27 ℃ room temperature, wiring patterns P, Fig. 9 (b) expression that sprays when being 450 μ sec blanking time make the temperature of glass substrate be 27 ℃ room temperature, spray the wiring patterns P when being 550 μ sec blanking time that Fig. 9 (a) expression makes the temperature of glass substrate.In any case, all produce projection B, can not obtain meticulous pattern P in wiring patterns P.This is because under the situation of room temperature (27 ℃), fix in order to make drop Fb, needs 3000 μ sec, so these drops Fb produces the mutual power that pulls, and concentrates to a side.
It is 150 ℃ that Figure 10 (a) expression makes the temperature of glass substrate, spray when being 450 μ sec blanking time wiring patterns P, Figure 10 (b) represent to make the temperature of glass substrate be 150 ℃, spray the wiring patterns P when being 550 μ sec blanking time.Shown in Figure 10 (a), being under 150 ℃, the situation of 450 μ sec, fix in order to make drop Fb, need 495 μ sec, so produce projection B, can not obtain meticulous pattern P in wiring patterns P.Shown in Figure 10 (b), being under 150 ℃, the situation of 550 μ sec, can not produce projection B, become high meticulous wiring patterns P.
It is 200 ℃ that Fig. 11 (a) expression makes the temperature of glass substrate, spray when being 450 μ sec blanking time wiring patterns P, Figure 11 (b) represent to make the temperature of glass substrate be 200 ℃, spray the wiring patterns P when being 550 μ sec blanking time.In any case, all less than producing projection B in wiring patterns P.This is because being under 200 ℃ the situation, fix in order to make drop Fb, need be 330 μ sec, and in any case, all become fixing state, so can obtain not having the high fine pattern of projection B.
At this, the needed time is as described below when forming the pattern of the 200cm that does not produce projection B with the temperature conditions of described 3 kinds of each substrates.
If now with the arranged spaced drop Fb of 20 μ m, 100000 drop Fb of essential ejection.So, the fixing needed time of drop Fb is 3000 μ sec for room temperature (27 ℃) time, is 495 μ sec when being 150 ℃, is 330 μ sec when being 200 ℃.
The needed time is for room temperature (27 ℃) time when forming the 200cm pattern that does not produce projection B, be 300sec (=100000 * 3000 μ sec), being 49.5sec (=100000 * 495 μ sec) when being 150 ℃, is 330sec (=100000 * 330 μ sec) when being 200 ℃.
From as can be known above-mentioned, near the boiling point of the tetradecane, then pattern formation speed improves the temperature of substrate more more.
In addition, for the drop Fb of the metallic ink liquid F that disperses silver (Ag) particle to form in the water solvent that is made of water 40%, ethylene glycol 40%, polyethylene glycol 30%, thereby the temperature conditions that has carried out the change glass substrate forms the experiment of wiring patterns P on glass substrate.
At this moment, be under 80 ℃, 100 ℃ the situation in the temperature of glass substrate, the bumping of water can not take place, can obtain the same wiring patterns P.
In addition, be under 120 ℃ the situation in the temperature of tellite 4G, the water bumping becomes the inhomogenous wiring patterns P of part fracture.
And then, be under 20 ℃, 40 ℃, 60 ℃ the situation in the temperature of glass substrate, bumping does not take place, but because drop Fb is not in stationary state, so between the drop under capillary effect, the power that pulls is still strong mutually, functional liquid takes place concentrate on local phenomenon, becomes the state that can not form wiring patterns P.In other words, temperature is low more then can not form pattern P more.
Then, below put down in writing the effect of the execution mode that constitutes as mentioned above.
(1) utilizes above-mentioned execution mode, more than the temperature of metallic ink liquid F when being heated to tellite 4G from shower nozzle 30 ejections, so the drop Fb of land is heated apace, can make its drying, so can shorten the ejection time of the drop Fb that the back will land, can form the wiring pattern P at short notice.
(2) utilize above-mentioned execution mode, the heating-up temperature of tellite 4G is controlled in the temperature less than the boiling point of drop Fb, so the drop Fb of land bumping can not take place.Thereby, can form the high fine wiring pattern P of high density.
(3) utilize above-mentioned execution mode, when formerly the drop Fb of land had entered stationary state, the drop Fb of back made ensuing drop Fb land with one with overlapping, and with its configuration.Thereby the Fb of drop formerly that is in stationary state can not attracted by the ensuing drop Fb that the ground land of not overlapped with one dispose, and can form the high fine wiring pattern P of high density.
(4) utilize above-mentioned execution mode, utilize rubber heater H, the whole top temperature that equally is heated to regulation of tellite 4G.Thereby land are disposed at the drop Fb of tellite 4G from the peripheral part start vaporizer, and peripheral part is than solid constituent (particle) concentration of the central portion concentration that reaches capacity quickly, stop self the moistening expansion along the face direction of tellite 4G.In other words, the drop Fb of land configurations begins to become stationary state from peripheral part, so the outer shape during land is indeformable.As a result, can form the high meticulous pattern of high density.
(5) utilize above-mentioned execution mode, try to achieve the time that the drop Fb of land is fixed in advance, should the time as ejection blanking time, ejection drop Fb is so can make the drop ejection of back after drop becomes stationary state really.
In addition, above-mentioned execution mode also can change as described below.
In the above-described embodiment, drop Fb relatively formerly, during part land configuration overlappingly drop Fb, after formerly drop Fb becomes stationary state on tellite 4G, carry out the land configuration, and drop Fb formerly be fixed in become stationary state on the tellite 4G before, also can land dispose ensuing drop Fb.
In the above-described embodiment, the initial relative front of drop Fb that is used for fixing is the drop Fb of land, and is overlapping with the spacing (pitch) of directly half of its land, and if an overlapping part also can suitably change its overlapping situation of enforcement.
In the above-described embodiment, land configurations also makes relatively successively the drop Fb of ejection and takes turns an overlapping part, thereby forms the wiring pattern P.This also can be as Figure 12 (a) thereby～the order ejection drop Fb shown in (f) forms the wiring pattern P.
That is, shown in Figure 12 (a), when formerly drop Fb is disposed at the position of regulation by land in order to form pattern, the landing positions A1 shown in 1 chain-dotted line that separates at drop Fb, the drop Fb of land configuration back from land.If at landing positions A1 configuration drop Fb, then make the drop Fb that sprays later and the drop Fb of initial configuration overlap land be disposed at the landing positions A2 shown in 1 chain-dotted line of Figure 12 (b).
If at landing positions A2 configuration drop Fb, then make drop Fb that sprays later and the drop Fb that the is disposed at landing positions A1 ground land of overlapping be disposed at the landing positions A3 shown in 1 chain-dotted line of Figure 12 (c).After, if similarly make drop Fb land be disposed at landing positions A4, A5, then can describe to utilize the wiring pattern P of the internal wiring 6 of drop Fb with the order shown in Figure 12 (d), (e).
In the above-described embodiment, functional liquid is embodied in metallic ink liquid F.Be not limited thereto, for example also can be embodied in the functional liquid that contains liquid crystal material.In other words, so long as be used to form the functional liquid that makes its ejection of pattern and get final product.
In the above-described embodiment, matrix is embodied in the wiring pattern that on tellite 4G, forms as the easy fired substrate 4 that constitutes LTCC multilager base plate 2.Be not limited thereto, for example also can on other substrates such as glass, use droplet ejection apparatus to form pattern.
In the above-described embodiment, the temperature of the temperature that the boiling point in the heating-up temperature of tellite 4G being become form less than a plurality of liquid that contain among the metallic ink liquid F is minimum.But, if, then it can be ignored, influence the concentration of form level of pattern selectedly from bumping even the minimum liquid of boiling point is formed and also can not be given the shape of pattern for bumping and bring the low concentration of influence degree, enforcement becomes less than this chosen temperature.Like this, carrying out relative drop Fb is more suitable for and effective dry.
In the above-mentioned execution mode, drop is sprayed the droplet discharging head 30 that mechanism is embodied in the piezoelectric element type of drive.Be not limited thereto, also droplet discharging head can be embodied in the shower nozzle of resistance heating mode or static driven mode.
Claims (9)
1. pattern formation method, thus it is the pattern formation method that forms pattern to the drop that matrix sprays the functional liquid that contains functional material successively on the surface of described matrix, wherein, comprising:
The first step of the temperature of the boiling point of forming more than the temperature of the functional liquid the when surface temperature of described matrix is heated to ejection and less than the liquid that contains in the functional liquid;
Described matrix is being heated under the state of described surface temperature, is spraying the drop of described functional liquid, thereby forming second step of pattern to described matrix,
Described functional liquid is the liquid that the particle as the solid constituent of functional material is disperseed, and is dry by the liquid that comprises in the drop of the described functional liquid of described matrix ejection is formed, and forms pattern based on described solid at described matrix surface.
2. pattern formation method according to claim 1 is characterized in that,
In the described first step, according to the surface temperature of described matrix become make land in the solid component concentration of the peripheral part of the drop of described matrix than reach capacity the quickly mode of temperature of concentration of the solid component concentration of central portion, heat described matrix.
3. pattern formation method according to claim 1 and 2 is characterized in that,
The pattern that forms in described second step is to spray drop overlappingly by the part between the adjacent drops that makes land at least to form.
4. pattern formation method according to claim 1 and 2 is characterized in that,
With land when the part of the drop formerly of described matrix sprays drop overlappingly, after the external diameter of the drop of described land formerly no longer changes, drop is sprayed.
5. pattern formation method according to claim 1 and 2 is characterized in that,
In described second step, the time till the external diameter of drop of obtaining the land of described relatively surface temperature in advance no longer changes,, more than blanking time, spray drop successively with described ejection with the ejection blanking time of described time as described drop.
6. pattern formation method according to claim 1 and 2 is characterized in that,
The easy fired sheet of described matrix for constituting by ceramic particle and resin,
Described functional liquid is the liquid that makes as the metallic dispersion of functional material.
7. pattern formation method according to claim 1 and 2 is characterized in that,
The boiling point that the liquid that contains in the functional liquid is formed is that liquid is formed the boiling point that the minimum liquid of mid-boiling point is formed.
8. pattern formation method according to claim 1 and 2 is characterized in that,
The boiling point that the liquid that contains in the functional liquid is formed is as described below: in liquid is formed, bumping takes place and the liquid that influences the concentration that pattern forms is formed the boiling point that the minimum liquid of mid-boiling point is formed.
9. circuit substrate, it is that circuit element is installed, and is formed with the circuit substrate of the wiring that is electrically connected with this mounted circuit element, it is characterized in that,
Described wiring forms with any described pattern formation method in the claim 1～8.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
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| JP2006321257 | 2006-11-29 | ||
| JP2006-321257 | 2006-11-29 | ||
| JP2006321257A JP4367481B2 (en) | 2006-11-29 | 2006-11-29 | Pattern formation method |
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| CN101193500A CN101193500A (en) | 2008-06-04 |
| CN101193500B true CN101193500B (en) | 2011-03-16 |
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| US (1) | US20080122898A1 (en) |
| JP (1) | JP4367481B2 (en) |
| KR (1) | KR100927363B1 (en) |
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| DE112013001892T5 (en) * | 2012-04-04 | 2014-12-24 | Ngk Spark Plug Co., Ltd. | A method of forming a structure, device and method of manufacturing a device |
| JP2014185358A (en) * | 2013-03-22 | 2014-10-02 | M&M Research Inst | Method and apparatus for forming sintered body film using laser |
| CN105291588A (en) * | 2015-11-19 | 2016-02-03 | 江苏汉印机电科技股份有限公司 | High-speed printed circuit board character jet printing machine with double work platforms and operation method of high-speed printed circuit board character jet printing machine |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW592982B (en) * | 2000-07-04 | 2004-06-21 | Seiko Epson Corp | Recording method |
| CN1524699A (en) * | 2003-02-28 | 2004-09-01 | ������������ʽ���� | Image recognition method for nozzle bore and relevant method and apparatus |
| CN1596063A (en) * | 2003-09-11 | 2005-03-16 | 精工爱普生株式会社 | Pattern forming method, conductive film, electro-optics device and electronic machine |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW535025B (en) * | 1998-12-03 | 2003-06-01 | Hitachi Ltd | Liquid crystal display device |
| US6501527B1 (en) * | 1999-07-29 | 2002-12-31 | Canon Kabushiki Kaisha | Liquid crystal elemental device, production process thereof and spacer-bearing substrate |
| JP3948247B2 (en) * | 2001-10-29 | 2007-07-25 | セイコーエプソン株式会社 | Method for forming a film pattern |
| JP4654627B2 (en) * | 2004-07-26 | 2011-03-23 | セイコーエプソン株式会社 | Chemical adsorption film forming method and chemical adsorption film |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW592982B (en) * | 2000-07-04 | 2004-06-21 | Seiko Epson Corp | Recording method |
| CN1524699A (en) * | 2003-02-28 | 2004-09-01 | ������������ʽ���� | Image recognition method for nozzle bore and relevant method and apparatus |
| CN1596063A (en) * | 2003-09-11 | 2005-03-16 | 精工爱普生株式会社 | Pattern forming method, conductive film, electro-optics device and electronic machine |
Non-Patent Citations (2)
| Title |
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| JP特开2002-356048A 2002.12.10 |
| JP特开平2-267175A 1995.10.17 |
Also Published As
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| KR20080048939A (en) | 2008-06-03 |
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| CN101193500A (en) | 2008-06-04 |
| JP4367481B2 (en) | 2009-11-18 |
| US20080122898A1 (en) | 2008-05-29 |
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