CN101192005A - Heat resisting negative photoresist preparation method - Google Patents
Heat resisting negative photoresist preparation method Download PDFInfo
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- CN101192005A CN101192005A CNA2006101510365A CN200610151036A CN101192005A CN 101192005 A CN101192005 A CN 101192005A CN A2006101510365 A CNA2006101510365 A CN A2006101510365A CN 200610151036 A CN200610151036 A CN 200610151036A CN 101192005 A CN101192005 A CN 101192005A
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Abstract
A preparation method for heat-resistant negative photoresist relates to a heat-resistant negative photoresist adhesive film prepared by utilizing four processes of raw material refining, adhesive mixing, filtration and preliminary drying film formation. The present invention uses poly cyclized butadiene as glue solution matrix, 2,6-double(azide benzylidene)4-methyl cyclohexanone as cross-linking agent, benzophenone as photosensitizer and cyclohexane as solvent, and obtains ultraviolet solidified heat-resistant negative photoresist through four processes of raw material refining, adhesive mixing, filtration and preliminary drying film formation. The gained ultraviolet solidified heat-resistant negative photoresist of the present invention needs to be baked for 30 minutes at 96 DEG C, obtaining an adhesive film which is transparent in color, has the etching graphic resolution (tested when photographic sensitivity is less than 5mJ/cm2) less than 2um, has the adhesive film pinhole density (tested when the adhesive film thickness is 1.0um) less than 0.4/cm2, and has the film-remaining ratio reach 95 percent. The adhesive film cannot become deformed and flow at 235 DEG C, and can still maintain the using performance of photoresist after six-month storage at 30 DEG C below zero.
Description
Technical field:
The present invention relates to a kind of preparation technology of heat resisting negative photoresist of ultraviolet light polymerization.
Background technology:
The development of electronics industry and the development of photoresist are closely related, photoresist develop into the basis that electronics industry provides information-based industry, and the development of electronics industry constantly proposes new requirement to photoresist, has promoted the development of photoresist.Photoetching technique is the gordian technique of microelectronics and micromechanics etc., and photoresist then is the key basic chemical industry material of photoetching technique.Poly-cyclisation butadiene can be widely applied in the manufacture craft of microelectronics industry integrated circuit and large scale integrated circuit as the raw material of negative photoresist.Poly-cyclisation along the butadiene photoresist at aspects such as photosensitivity, graphics resolution, thermotolerance and cementabilities all above poly-cyclisation isoprene and poly-cyclized hatural rubber photoresist, and have good with backing material and metal material adhesiveness, be difficult for undercutting, membrane left rate height, corrosion-resistant, luminous sensitivity is high and process advantages such as tolerance is big.Poly-cyclisation not only can be applied in microelectronic along the butadiene photoresist, can also be widely used at aspects such as diaphragm, tackifier, printing ink, paint and even rubber modifiers.
Summary of the invention:
The preparation method who the purpose of this invention is to provide a kind of heat resisting negative photoresist of ultraviolet light polymerization.It relates to and utilizes feed purification, impregnation, filtration and four technologies of preliminary drying film forming to prepare heat-resisting negative photoresist glued membrane.The present invention is the glue matrix with poly-cyclisation butadiene, with 2, two (nitrine benzal) the 4-methyl cyclohexanones of 6-are crosslinking chemical, with the benzophenone is photosensitizer, with the cyclohexane is solvent, obtains the heat resisting negative photoresist of ultraviolet light polymerization by feed purification, impregnation and filtering technique and four technologies of preliminary drying film forming.The heat resisting negative photoresist of the ultraviolet light polymerization that this invention obtains need dry by the fire 30 minutes before 96 ℃ are descended, and the glued membrane color that obtains is transparent, and (light sensitivity is less than 5mJ/cm for the etching graphics resolution
2Following test) less than 2 μ m, glued membrane pinhold density (film thickness is 1.0 μ m tests down) is less than 0.4/cm
2, membrane left rate reaches 95%, can not deform and flow at 235 ℃ of following glued membranes, and store the usability that still kept photoresist in six months down at-30 ℃.
Embodiment:
1, poly-cyclisation butadiene feed purification
At room temperature, to gather cyclisation butadiene raw material (molecular weight distribution is lower than 1.5) washs three times with acetum, remove unreacted polybutadiene impurity in the material liquid, liquid after will washing again places supercentrifuge (9000r/min) centrifuging 15min, to remove residual impurity and gel particle.By water and cyclohexane azeotropic, remove minor amount of water at 70-75 ℃.
2, impregnation
To gather the cyclisation butadiene and continue to be dissolved in the cyclohexane solvent in the impregnation still, dissolving stirs and obtains the cyclohexane solution of poly-cyclisation butadiene, makes its solution concentration reach 32wt%.Add 2 of 3wt% again, two (nitrine benzal)-4-methyl cyclohexanone crosslinking chemicals of 6-and 0.5% benzophenone photosensitizer, stirring and dissolving is diluted to certain viscosity.
3, filter
Above-mentioned glue is adopted teflon hyperfiltration membrane filtration in filtrator, under nitrogen atmosphere protection, glue is filtered 2 times, adopt 0.8 μ m filter membrane inflated with nitrogen pressure filtration for the first time, adopt 0.1 μ m filter membrane inflated with nitrogen pressure filtration for the second time.
4, film forming
Under 20 ℃, be coated on the silicon chip will filtering the back glue on the sol evenning machine, adopt the rotating centrifugal coating technique, make the photoresist surface should be evenly level and smooth.After getting rid of bubble, glue begins to rotate film forming.Regulate rotating speed, 30 seconds coating time according to required bondline thickness.Carry out the preceding baking of glued membrane in dustless heated-air circulation oven, oven temperature rises to 96 ℃ gradually from room temperature, and the preceding baking time is 30 minutes, obtains having photosensitive glued membrane at last.
Claims (8)
1. the preparation method of a heat resisting negative photoresist, it is characterized in that with poly-cyclisation butadiene be the glue matrix, with 2, two (nitrine benzal) the 4-methyl cyclohexanones of 6-are crosslinking chemical, with the benzophenone is photosensitizer, with the cyclohexane is solvent, by feed purification, impregnation and filtering technique, can obtain the heat resisting negative photoresist of ultraviolet light polymerization.
2. according to the preparation method of the described a kind of heat resisting negative photoresist of claim one, it is characterized in that the primary raw material of described preparation negative photoresist is poly-cyclisation butadiene.
3. according to the preparation method of the described a kind of heat resisting negative photoresist of claim one, the solvent that it is characterized in that described negative photoresist is a cyclohexane.
4. according to the preparation method of the described a kind of heat resisting negative photoresist of claim one, it is characterized in that the poly-cyclisation butadiene molecule amount distribution of primary raw material of described preparation negative photoresist is lower than 1.5.
5. according to the preparation method of the described a kind of heat resisting negative photoresist of claim one, it is characterized in that described glued membrane need dry by the fire 30 minutes before 96 ℃ are descended.
6. according to the preparation method of the described a kind of heat resisting negative photoresist of claim one, (light sensitivity is less than 5mJ/cm to it is characterized in that described etching graphics resolution
2Following test) less than 2 μ m.
7. according to the preparation method of the described a kind of heat resisting negative photoresist of claim one, it is characterized in that described glued membrane pinhold density (film thickness is 1.0 μ m tests down) is less than 0.4/cm
2
8. according to the preparation method of the described a kind of heat resisting negative photoresist of claim one, it is characterized in that described glued membrane can not deform and flow under 235 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101510365A CN101192005A (en) | 2006-11-20 | 2006-11-20 | Heat resisting negative photoresist preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101510365A CN101192005A (en) | 2006-11-20 | 2006-11-20 | Heat resisting negative photoresist preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101192005A true CN101192005A (en) | 2008-06-04 |
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ID=39487068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101510365A Pending CN101192005A (en) | 2006-11-20 | 2006-11-20 | Heat resisting negative photoresist preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101192005A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789475A (en) * | 2014-12-24 | 2016-07-20 | 固安翌光科技有限公司 | Organic light-emitting device and preparation method thereof |
| CN107561862A (en) * | 2017-09-20 | 2018-01-09 | 苏州瑞红电子化学品有限公司 | Suitable for the negative photoresist of GPP diodes manufacture |
-
2006
- 2006-11-20 CN CNA2006101510365A patent/CN101192005A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789475A (en) * | 2014-12-24 | 2016-07-20 | 固安翌光科技有限公司 | Organic light-emitting device and preparation method thereof |
| CN107561862A (en) * | 2017-09-20 | 2018-01-09 | 苏州瑞红电子化学品有限公司 | Suitable for the negative photoresist of GPP diodes manufacture |
| CN107561862B (en) * | 2017-09-20 | 2020-08-07 | 苏州瑞红电子化学品有限公司 | Negative photoresist suitable for GPP diode manufacturing |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080604 |