CN101192000B - Central symmetry continuous microstructure diffraction element mask manufacture method - Google Patents
Central symmetry continuous microstructure diffraction element mask manufacture method Download PDFInfo
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- CN101192000B CN101192000B CN2007101704647A CN200710170464A CN101192000B CN 101192000 B CN101192000 B CN 101192000B CN 2007101704647 A CN2007101704647 A CN 2007101704647A CN 200710170464 A CN200710170464 A CN 200710170464A CN 101192000 B CN101192000 B CN 101192000B
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- photoetching hectograph
- mask
- laser
- diffraction element
- energy
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Abstract
The present invention discloses a manufacturing method for centrosymmetric continuous microstructure diffraction element mask, comprising the steps of cleaning a substrate, manufacturing a photoresist edition, forming an energy program file, exposing laser, developing, hardening a die, etc. The present invention adopts a laser direct writing technique to perform positioned quantitative exposure to the photoresist on the surface of the photoresist edition; a photoresist layer forms a continuous microstructure after developing, forming a mask after heating treatment. The present invention is characterized in high manufacturing precision, short manufacturing cycle, simple manufacturing process, low manufacturing cost, etc., and is especially suitable for the manufacture of the centrosymmetric continuous microstructure diffraction element masks with light weight and high performance.
Description
Technical field
The present invention relates to the continuous diffraction optical element, the method for making of specifically a kind of center Symmetrical Continuous microstructure diffraction element mask.
Background technology
Diffraction optical element is applied to optical system and helps reducing system bulk, weight reduction, simplification optical system and improve image quality, and therefore, diffraction optical element has good application prospects at optical field; For a long time, domestic most of research unit can only carry out binary optical elements and make, and does not also possess the manufacturing technology of continuous diffraction optical element, because method for making is unsound, has restricted the popularization and application of diffraction optical element.Along with the development of laser processing technology, adopt laser direct-writing fabrication techniques continuous diffraction optical element to become possibility.The prerequisite of making such continuous diffraction optical element is to produce qualified mask, and the quality of mask quality is one of gordian technique of continuous diffraction optical element making; Owing to be subjected to the restriction of appointed condition, make the subject matter that such mask exists at present and be: make that precision can't guarantee, the processing technology complexity, the cycle is long, cost is high, can't realize industrialization, large-scale production.
Summary of the invention
The method for making that a kind of center Symmetrical Continuous microstructure diffraction element mask of providing at the deficiencies in the prior art is provided, this method adopts the laser direct-writing technology to realize the making of center Symmetrical Continuous microstructure diffraction element mask, have that technology is simple, the cycle is short, low cost and other advantages, adopt continuous diffraction optical element precision height, the diffraction efficiency height of this mask manufacture, process stabilizing is fit to suitability for industrialized production.
The object of the present invention is achieved like this:
The method for making of a kind of center Symmetrical Continuous microstructure diffraction element mask, it comprises following concrete steps:
A, substrate clean
Selecting quartz glass is substrate, soaks in the mixed solution of the potassium dichromate and the concentrated sulphuric acid 3～5 hours; Deionized water rinsing; Dry, place dryer to toast, the room temperature cooling.
B, photoetching hectograph are made
Adopt spin-coating method to give the substrate resist coating, form the photoetching hectograph, the thick 0.5～2um of gluing.
C, energy program file form
Press the design data of mask, calculate laser energy and coding, form the energy program file with laser energy and the relation of inscribing the radius and the inscription degree of depth.
D, laser explosure
Above-mentioned photoetching hectograph is adsorbed on the laser direct writing equipment, and the center of the rotation center of conditioning equipment universal stage and photoetching hectograph is consistent, and opens laser direct writing equipment, under the energy program document control to the automatic exposure of photoetching hectograph.
E, development
The photoetching hectograph of finishing exposure is put into developer solution to develop.
F, hard mould
Photoetching hectograph after developing is placed the vacuum drying chamber baking, and the room temperature cooling is made and is finished.
Above-mentioned said inscription radius refers to that exposure position is to the distance of rotation center on the photoetching hectograph; Inscribe the degree of depth that the degree of depth refers to form behind the exposure imaging microstructure.
The present invention's beneficial effect compared with prior art is:
(1) the whole process automation control of the present invention, process stabilizing, good reproducibility, easy and simple to handle, the product percent of pass height.
(2) the present invention has improved microstructure and has made precision owing to adopt laser direct-writing technology, has improved diffraction efficiency.
Embodiment
Embodiment
(1), substrate cleans
Select quartz glass substrate, in the mixed solution of the potassium dichromate and the concentrated sulphuric acid, soaked 3～5 hours; Use deionized water rinsing; Dry with photoresist spinner, place dryer to toast, temperature: 80 ℃～100 ℃, time: 30～50 minutes, the room temperature cooling.
(2), the photoetching hectograph is made
Adopt spin-coating method to give the substrate resist coating with glue spreader, form hectograph, select the S1860 model photoresist of Shiply company for use, 200～7000 rev/mins of glue spreader rotating speeds, the thick 0.5～2um of gluing.
(3), the energy program file forms
Press the design data of mask, utilize laser energy and the relation of inscribing the radius and the inscription degree of depth to calculate laser energy, write and be compiled into the control program of CLWS-300C/M polar coordinates laser direct writing equipment, form the energy program file.
(4), laser explosure
Select CLWS-300C/M polar coordinates laser direct writing equipment for use; Above-mentioned photoetching hectograph is placed equipment universal stage center, adjust photoetching hectograph center and universal stage center and be consistent, open laser direct writing equipment, under the control of energy program file, implement automatic exposure the photoetching hectograph; The laser energy of laser direct writing equipment is set: 100～800mW, the radius of clean-up is set: 1～140mm.
(5), develop
The photoetching hectograph of finishing exposure is put into developer solution to develop; Developer solution model: Microposit351, development time: 10～60 seconds.
(6), hard mould
Photoetching hectograph after developing is placed the vacuum drying chamber baking, temperature: 100～140 ℃, the time: 20～40 minutes; The room temperature cooling.Obtain center Symmetrical Continuous microstructure diffraction element mask.
Claims (1)
1. the method for making of a center Symmetrical Continuous microstructure diffraction element mask is characterized in that it comprises following concrete steps:
A, substrate clean
Selecting quartz glass is substrate, soaks in the mixed solution of the potassium dichromate and the concentrated sulphuric acid 3～5 hours; Deionized water rinsing; Dry, place dryer to toast, the room temperature cooling;
B, photoetching hectograph are made
Adopt spin-coating method to give the substrate resist coating, form the photoetching hectograph, the thick 0.5～2um of glue;
C, energy program file form
Press the design data of mask, calculate laser energy and coding, form the energy program file with laser energy and the relation of inscribing the radius and the inscription degree of depth;
D, laser explosure
Above-mentioned photoetching hectograph is adsorbed on the laser direct writing equipment, and the center of the rotation center of conditioning equipment universal stage and photoetching hectograph is consistent, and opens laser direct writing equipment, under the energy program document control to the automatic exposure of photoetching hectograph;
E, development
The photoetching hectograph of finishing exposure is put into developer solution to develop;
F, hard mould
Photoetching hectograph after developing is placed the vacuum drying chamber baking, the room temperature cooling, mask manufacture finishes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101704647A CN101192000B (en) | 2007-11-15 | 2007-11-15 | Central symmetry continuous microstructure diffraction element mask manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101704647A CN101192000B (en) | 2007-11-15 | 2007-11-15 | Central symmetry continuous microstructure diffraction element mask manufacture method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101192000A CN101192000A (en) | 2008-06-04 |
| CN101192000B true CN101192000B (en) | 2010-06-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101704647A Expired - Fee Related CN101192000B (en) | 2007-11-15 | 2007-11-15 | Central symmetry continuous microstructure diffraction element mask manufacture method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101192000B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096316B (en) * | 2010-12-22 | 2013-08-28 | 中国科学院光电技术研究所 | Method for improving super-diffraction lithographic resolution and lithographic quality by utilizing island-type structure mask |
| CN111458976B (en) * | 2020-05-19 | 2021-09-07 | 中国科学院光电技术研究所 | Integrated forming method for manufacturing three-dimensional rotational symmetric microstructure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000267298A (en) * | 1999-03-12 | 2000-09-29 | Nec Corp | Pattern forming method for chemical amplification type resist |
| CN1346061A (en) * | 2000-09-25 | 2002-04-24 | 中国科学院光电技术研究所 | Method for making microlens array |
| CN1553222A (en) * | 2003-05-29 | 2004-12-08 | 中国科学院光电技术研究所 | Continuous deep relief nonspheric microlens array manufacturing method |
| EP1035436B1 (en) * | 1999-03-08 | 2005-09-07 | JSR Corporation | Resist pattern formation method |
-
2007
- 2007-11-15 CN CN2007101704647A patent/CN101192000B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1035436B1 (en) * | 1999-03-08 | 2005-09-07 | JSR Corporation | Resist pattern formation method |
| JP2000267298A (en) * | 1999-03-12 | 2000-09-29 | Nec Corp | Pattern forming method for chemical amplification type resist |
| CN1346061A (en) * | 2000-09-25 | 2002-04-24 | 中国科学院光电技术研究所 | Method for making microlens array |
| CN1553222A (en) * | 2003-05-29 | 2004-12-08 | 中国科学院光电技术研究所 | Continuous deep relief nonspheric microlens array manufacturing method |
Non-Patent Citations (3)
| Title |
|---|
| 刘宏开，罗崇泰，王多书，陈焘，叶自煜.连续型衍射透镜激光直写技术研究.红外与激光工程35.2006,(35),53-56. * |
| 王多书，罗崇泰，刘宏开，马勉军，黄良甫.连续型平面衍射聚光透镜掩模的制作.应用光学26 6.2005,26(6),77-80. |
| 王多书,罗崇泰,刘宏开,马勉军,黄良甫.连续型平面衍射聚光透镜掩模的制作.应用光学26 6.2005,26(6),77-80. * |
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|---|---|
| CN101192000A (en) | 2008-06-04 |
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