CN101183656A - Surface form measuring apparatus and stress measuring apparatus and surface form measuring method and stress measuring method - Google Patents
Surface form measuring apparatus and stress measuring apparatus and surface form measuring method and stress measuring method Download PDFInfo
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- G—PHYSICS
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- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
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Abstract
In a stress measuring apparatus(1), reflected light of light emitted to a substrate(9) through an objective lens 457) is received by a light shielding pattern imaging part(43), to acquire an image of a light shielding pattern(453a) positioned at an aperture stop part (453)of an optical system(45). A control part(5) obtains gradient vectors of the substrate(9) in a plurality of gradient vector measurement areas and surface form of the substrate on the basis of outputs of the light shielding pattern imaging part, to obtain a stress in a film formed on the substrate(9). Since light directed through the objective lens(457) becomes approximately parallel rays of light on the substrate, measurement(1) can be performed without focusing on each gradient vector measurement area and the surface form of the substrate can be obtained easily and rapidly. Consequently, it is possible to obtain a stress in the film formed on the substrate(9) easily and rapidly.
Description
Technical field
The present invention relates to a kind of technology of determination object thing surface configuration, also relate to a kind of technology of utilizing the film internal stress on the surface shape measuring object of measuring.
Background technology
Up to the present, in the manufacturing of semiconductor element, usually carry out film forming (film deposition) or annealing various processing such as (annealing process) on the semiconductor substrate (below abbreviate " substrate " as).Handle according to these, produce residual stress (residual stress) in the film on substrate.In recent years, along with the requirement that becomes more meticulous of the height of semiconductor element, this residual stress becomes increasingly conspicuous to the influence of the quality of semiconductor element, needs to improve the stress determination in the film.
As one of device of measuring the film internal stress in the noncontact mode, a kind of like this film evaluating apparatus is disclosed in the TOHKEMY 2000-9553 communique (document 1), promptly, (optical leverdetection method: the optical lever detection method) radius of curvature of mensuration substrate, the radius of curvature that utilization obtains is tried to achieve the film internal stress to adopt the optical lever method.In the film evaluating apparatus of document 1, the LASER Light Source emitting laser in the enterprising line scanning of substrate, based on from the light receiving position on the catoptrical detector of film, is tried to achieve radius of curvature thereby calculate on the film angle of reflection of a plurality of positions.
On the other hand, a kind of like this technology is disclosed in the TOHKEMY 2004-138519 communique (document 2), promptly, on the determination object thing in the determining film thickness device of thickness, dispose light-shielding pattern in optical path of illuminating light, try to achieve the inclination angle of object based on the picture that images in the light-shielding pattern on the catoptrical light path of object from light source directive substrate.In the determining film thickness device of document 2, thereby can realize high-precision determining film thickness by utilizing resulting inclination angle to try to achieve on the object thickness.
Yet, in the film evaluating apparatus of document 1, because radius of curvature is utilized laser in measuring, thus will become greatly in the relative low situation radius of curvature evaluated error of this optical maser wavelength reflectivity of mensuration target, thus the film internal stress can not high-precisionly be tried to achieve.In addition, under the situation that forms pattern on the substrate, laser can be owing to scattering takes place in this pattern, thereby can not the high-precision measuring radius of curvature, so, not too be applicable to the stress determination of the figuratum substrate of formation.
Further, in this device, try to achieve radius of curvature according to the skew of the light receiving position of the reverberation on a plurality of the locating on detector, the focal position that respectively locates is very big to the influence of measurement result, so, need on respectively locating, carry out the high accuracy focusing.Therefore, apparatus structure is complicated, and the stress determination time spent increases.
Summary of the invention
The present invention is towards the surface-profile measuring instrument of determination object thing surface configuration, and its purpose is can be easily and obtain the surface configuration of object rapidly.The present invention is the stress determination device of the film internal stress on the determination object thing also, and its purpose also is to provide a kind of can obtain film internal stress on the object easily and rapidly based on the object surface configuration.
A kind of surface-profile measuring instrument comprises: light source, and it penetrates light; Optical system, its light that above-mentioned light source is penetrated be via the irradiation area on the object lens guiding object, and will be from the reverberation of above-mentioned irradiation area via above-mentioned object lens guiding assigned position; Light-shielding pattern, its from above-mentioned light source to the light path of above-mentioned irradiation area, be disposed at the position that on light path, roughly becomes conjugate relation with the aperture diaphragm position; Shoot part, it obtains the picture of the above-mentioned light-shielding pattern that images in the afore mentioned rules position; The tilt vector calculating part, it tries to achieve the tilt vector of the above-mentioned irradiation area normal direction of expression based on the output of above-mentioned shoot part; Travel mechanism, it makes above-mentioned irradiation area move relative to above-mentioned object; The surface configuration calculating part, the tilt vector in a plurality of zones on its above-mentioned object of trying to achieve based on above-mentioned tilt vector calculating part is tried to achieve the surface configuration of above-mentioned object.In surface-profile measuring instrument, can be easily and promptly try to achieve the surface configuration of object.
A kind of stress determination device comprises: light source, penetrate light; Optical system, its light that above-mentioned light source is penetrated be via the irradiation area on the object lens guiding object, and will be from the reverberation of above-mentioned irradiation area via above-mentioned object lens guiding assigned position; Light-shielding pattern, its from above-mentioned light source to the light path of above-mentioned irradiation area, be disposed at the position that optically roughly becomes conjugate relation with the aperture diaphragm position; Shoot part, it obtains the picture of the above-mentioned light-shielding pattern that images in the afore mentioned rules position; The tilt vector calculating part, it tries to achieve the tilt vector of the above-mentioned irradiation area normal direction of expression based on the output of above-mentioned shoot part; Travel mechanism, it makes above-mentioned irradiation area move relative to above-mentioned object; The surface configuration calculating part, the tilt vector in a plurality of zones on its above-mentioned object of trying to achieve based on above-mentioned tilt vector calculating part is tried to achieve the surface configuration of above-mentioned object; The radius of curvature calculating part, it tries to achieve the radius of curvature in the stress determination zone on the above-mentioned object based on the above-mentioned surface configuration that above-mentioned surface configuration calculating part is tried to achieve; Determining film thickness portion, it is by the thickness of the film on the above-mentioned object of optical method measuring; Stress calculation portion, the radius of curvature and the thickness in the above-mentioned stress determination zone that it is tried to achieve based on above-mentioned radius of curvature calculating part and above-mentioned determining film thickness portion are tried to achieve the stress in the above-mentioned film in the above-mentioned stress determination zone.In the stress determination device, can be easily and promptly try to achieve stress in the film on the object.
In a preferred embodiment of the present invention, above-mentioned determining film thickness portion has: light accepting part, and it receives the reverberation that the light that penetrates from above-mentioned light source is reflected by above-mentioned irradiation area; The thickness calculating part, it tries to achieve the thickness of the above-mentioned film in the above-mentioned irradiation area based on the output of above-mentioned light accepting part by optical interferometry.
In another preferred implementation, above-mentioned determining film thickness portion also has: light source cell, and it has another light source, penetrates the light that polarization takes place to above-mentioned object; Light receiving unit, it receives the reflection of light light from the above-mentioned generation polarization of above-mentioned object, thereby obtains above-mentioned polarization of reflected light state; The thickness calculating part, it tries to achieve the thickness of the above-mentioned film on the above-mentioned object based on the polarization state that above-mentioned light receiving unit obtained.
In another execution mode, the stress determination device also comprises: maintaining part, and it is used to keep above-mentioned object; Distance detecting portion, the light that it utilizes from above-mentioned object lens outgoing detects above-mentioned object lens and above-mentioned maintaining part or remains in distance between the above-mentioned object on the above-mentioned maintaining part; Object THICKNESS CALCULATION portion, it is based on the detected above-mentioned object lens of above-mentioned distance detecting portion and the distance between the above-mentioned object and do not keeping above-mentioned object lens under the object state and the distance between the above-mentioned maintaining part, try to achieve the thickness of above-mentioned object, the thickness of above-mentioned object is used for the calculating of above-mentioned Stress calculation portion for above-mentioned film internal stress.
In the technical scheme of the present invention, provide a kind of surface shape measuring method, be used for the surface configuration of determination object thing, comprising: a) operation, the light that light source is penetrated is via the irradiation area of the irradiation optical system with object lens to the object; B) operation, on light path from above-mentioned light source to above-mentioned object, optically roughly become the position configuration of conjugate relation that light-shielding pattern is arranged with the aperture diaphragm position, will be from the above-mentioned reflection of light light of above-mentioned irradiation area via above-mentioned object lens guiding assigned position, and obtain the picture of the above-mentioned light-shielding pattern that images in the afore mentioned rules position by shoot part; C) operation is repeating above-mentioned a) operation and above-mentioned b when above-mentioned object moves above-mentioned irradiation area) operation, and, try to achieve the tilt vector of the normal direction in a plurality of zones on the above-mentioned object of expression based on the output of above-mentioned shoot part; D) operation based on the tilt vector in above-mentioned a plurality of zones, is tried to achieve the surface configuration of above-mentioned object.
Above-mentioned c in the surface shape measuring method) in the operation, preferably carries out relatively moving continuously for the above-mentioned object of above-mentioned irradiation area.
Also technical scheme of the present invention provides a kind of stress determination method, is used for the film internal stress on the determination object thing, comprising: a) operation, and the light that light source is penetrated is via the irradiation area of the irradiation optical system with object lens to the object; B) operation, on light path from above-mentioned light source to above-mentioned object, optically roughly become the position configuration of conjugate relation that light-shielding pattern is arranged with the aperture diaphragm position, will be from the above-mentioned reflection of light light of above-mentioned irradiation area via above-mentioned object lens guiding assigned position, and obtain the picture of the above-mentioned light-shielding pattern that images in the afore mentioned rules position by shoot part; C) operation will repeat above-mentioned a) operation and above-mentioned b when above-mentioned object moves above-mentioned irradiation area) operation, and, try to achieve the tilt vector of the normal direction in a plurality of zones on the above-mentioned object of expression based on the output of above-mentioned shoot part; D) operation based on the tilt vector in above-mentioned a plurality of zones, is tried to achieve the surface configuration of above-mentioned object; E) operation based on above-mentioned surface configuration, is tried to achieve the radius of curvature in the stress determination zone on the above-mentioned object; F) operation is by the thickness of the film in the above-mentioned stress determination of the optical method measuring zone; G) operation based on the above-mentioned radius of curvature and the above-mentioned thickness in above-mentioned stress determination zone, is tried to achieve the stress in the above-mentioned film in the above-mentioned stress determination zone.
The above-mentioned c of stress determination method) in the operation, preferably carries out relatively moving continuously for the above-mentioned object of above-mentioned irradiation area.
Above-mentioned purpose and other purpose, feature, form and advantage can become more clear by detailed description of the present invention with reference to the accompanying drawings.
Description of drawings
Fig. 1 is the figure of the stress determination apparatus structure of expression first execution mode.
Fig. 2 is the figure of expression control part structure.
Fig. 3 is the block diagram of expression control part function.
Fig. 4 is the figure of expression stress determination flow process.
Fig. 5 A and Fig. 5 B are the figure of expression substrate surface shape.
Fig. 6 is the figure of the stress determination apparatus structure of expression second execution mode.
Fig. 7 is the block diagram of expression control part function.
Embodiment
Fig. 1 is the figure of stress determination device 1 structure of expression first embodiment of the invention.Stress determination device 1 is for being used for measuring the device that is formed at the film internal stress on semiconductor substrate 9 (below abbreviate " substrate 9 " as) interarea.Film both can be that monofilm also can be a multilayer film.In the present embodiment, do not form patterns such as Wiring pattern on the substrate 9.
As shown in Figure 1, stress determination device 1 comprises: objective table 2, and it is as the substrate maintaining part that keeps substrate 9; Objective table travel mechanism 21, it moves objective table 2 along directions X among Fig. 1 and Y direction; Lifting mechanism for objective table 24, it is with the Z direction lifting of objective table 2 in Fig. 1; Ellipsometer test 3, its acquisition are used for the polarization of the film on the substrate 9 is resolved the information of (ellipsometry); Optical interference unit 4, it obtains the catoptrical spectral intensity (Spectral intensity) from substrate 9; And control part 5, it is controlled these structures.
Fig. 2 is the figure of the structure of expression control part 5.As shown in Figure 2, same with general computer, control part 5 by the CPU51 that carries out various computings, the performed program of storage or become ROM53, the storing various information of RAM52, the storage base program of the operating area of computing hard disk 54, show that to the operator display 55 of various information and input parts such as keyboard and mouse 56 etc. are formed by connecting.
Shown in Fig. 3 be control part 5 CPU51 (with reference to Fig. 2) thus etc. carry out the block diagram of the function that computing realizes according to program, wherein, show other structure together, the tilt vector calculating part 511 among Fig. 3, surface configuration calculating part 512, radius of curvature calculating part 513, Stress calculation portion 514, the first thickness calculating part 515 and the second thickness calculating part 516 are equivalent to the function that CPU51 etc. is realized.And these functions can be by many computer realization.
As shown in Figure 1, objective table travel mechanism 21 has objective table 2 along directions X travel mechanism 22 that the directions X among Fig. 1 moves and the Y direction travel mechanism 23 that moves along the Y direction.In the directions X travel mechanism 22 ball screw (omitting diagram) is connected on the motor 221, by the rotation of motor 221, Y direction travel mechanism 23 moves on the directions X of guide rail 222 in Fig. 1.Y direction travel mechanism 23 is identical structure with directions X travel mechanism 22, when motor 231 rotates, moves on the Y direction along guide rail 232 by ball screw (omitting diagram) objective table 2.In stress determination device 1,, the irradiation area that exposes to the light on the substrate 9 from ellipsometer test 3 and optical interference unit 4 is moved relative to substrate 9 by objective table travel mechanism 21.
In stress determination device 1, dispose the speculum 25 of the light wavelength that the light source cell 31 that is used to confirm ellipsometer test 3 penetrates on objective table 2, speculum 25 is so that be obliquely installed to vertical direction top reflection way from the light of the regulation incidence angle of light source cell 31 irradiations.
Specifically, import, derive illumination light from the lens 452 that the other end is set from the illumination light of light source 41 a end along optical fiber 451.The illumination light that is derived is directed to aperture diaphragm portion 453 via lens 450a.Be provided with the light-shielding pattern 453a (as forming the graticule of cross) of regulation in aperture diaphragm portion 453, illumination light is blocked corresponding to the part of light-shielding pattern 453a and is directed to field stop 454 via lens 450b.
Illumination light by field stop portion 454 restriction visual fields is directed to semi-transparent semi-reflecting lens 455 via lens 450, and is directed to semi-transparent semi-reflecting lens 456 through semi-transparent semi-reflecting lens 455.The illumination light that is reflected by semi-transparent semi-reflecting lens 456 is by being irradiated to via object lens 457 on the irradiation area on the substrate 9.At this moment, although the range of the irradiation area of the illumination light on the substrate 9 corresponding the visual field restriction of field stop 454, the picture of the light-shielding pattern 453a of aperture diaphragm portion 453 can not image on the substrate 9.In stress determination device 1, because object lens 457 adopt the object lens of low range (in the present embodiment being 10 times), the depth of focus of these object lens 457 (depth of focus) relatively is approximately 4 μ m, so roughly be directional light from the light of object lens 457 directive substrates 9 on substrate 9.
Reverberation from substrate 9 is directed to semi-transparent semi-reflecting lens 456 via object lens 457, and wherein a part of light reflection is to semi-transparent semi-reflecting lens 455.The light that is reflected is further reflected by semi-transparent semi-reflecting lens 455, is received by light-shielding pattern shoot part 43 via lens 450d.From light-shielding pattern 453a via the surface of substrate 9 to the optical system of light-shielding pattern shoot part 43, the position of light-shielding pattern shoot part 43 optically becomes conjugate relation with light-shielding pattern 453a, by imaging, the view data of light-shielding pattern 453a is transferred to the tilt vector calculating part 511 (with reference to Fig. 3) of control part 5 to light-shielding pattern 453a in light-shielding pattern shoot part 43.
The reverberation that sees through semi-transparent semi-reflecting lens 456 sees through semi-transparent semi-reflecting lens 458 and is directed to semi-transparent semi-reflecting lens 459 afterwards, and wherein a part of light is reflected.The light that is reflected is directed to substrate imaging portion 44 via lens 450 and is received.The position of substrate imaging portion 44 optically becomes conjugate relation with the surface location of field stop portion 454 and substrate 9, and by the picture of the irradiation position of illumination light on the substrate imaging portion 44 shooting substrates 9, the view data of being obtained is transferred to control part 5.
The light that sees through semi-transparent semi-reflecting lens 459 is via lens 450f guiding optical splitter 42.In the optical interference unit 4, being received as the optical splitter 42 of light accepting part by the light of irradiation area reflection on the substrate 9 and obtain catoptrical spectral intensity in the light that light source 41 penetrates, the data of this spectral intensity are transferred to the second thickness calculating part 516 (with reference to Fig. 3) of control part 5.In optical interference unit 4, constitute optical system 45 by lens 450a～450f, 452, optical fiber 451, aperture diaphragm portion 453, field stop portion 454, semi-transparent semi-reflecting lens 455,456,458,459 and object lens 457.
The flow process that the film internal stress of utilizing on 1 pair of substrate 9 of stress determination device is measured describes below.In stress determination device 1, try to achieve the radius of curvature that substrate 9 upper stresses are measured the zone by optical interference unit 4, try to achieve the thickness in this stress determination zone by ellipsometer test 3 or optical interference unit 4, try to achieve stress in the stress determination zone according to the thickness of these radius of curvature, thickness and substrate 9.
In stress determination device 1, the first thickness calculating part 515 of ellipsometer test 3 and control part 5 serves as the determining film thickness portion that is used for by thickness on the optical method measuring substrate 9, and the optical interference unit 4 and the second thickness calculating part 516 serve as another determining film thickness portion that is used for by the thickness on the optical method measuring substrate 9.When the film on substrate 9 is thin, in the first thickness calculating part 515, adopt the determining film thickness of polarization analysis mode from the output of the polarized state of light of ellipsometer test 3 based on expression, and it is thicker or when being multilayer film at film, by the second thickness calculating part 516, based on the output of expression, try to achieve spectral reflectivity (spectral reflectance) and adopt optical interferometry to calculate thickness from the spectral intensity of the light of optical interference unit 4.
Fig. 4 is the flow chart that expression is carried out stress determination by stress determination device 1.When the film internal stress on adopting 1 pair of substrate 9 of stress determination device shown in Figure 1 is measured, at first, substrate 9 is placed on the objective table 2, and focus to be located at the mode that substrate 9 lip-deep reference areas (that is, becoming the zone of benchmark in the surface shape measuring of substrate 9) are positioned at object lens 457 depths of focus.In the present embodiment, by optical system 45 by the picture of naked-eye observation with the reference area of confirming substrate 9, with manual mode of operation lifting mechanism for objective table 24 to carry out the focusing of substrate 9.If focusing finishes, then utilize objective table travel mechanism 21 beginning moving stage 2 and substrates 9 (step S11).
Then, the light that the light source 41 of optical interference unit 4 penetrates is via the irradiation area on the optical system 45 directive substrates 9 that comprise object lens 457 (being designated as " tilt vector is measured the zone " among Fig. 4) (step S12), is directed to light-shielding pattern shoot part 43 via object lens 457 and obtains the picture (step S13) of light-shielding pattern 453a from the reverberation of irradiation area.The view data of the light-shielding pattern 453a that light-shielding pattern shoot part 43 is obtained is transferred to the tilt vector calculating part 511 (with reference to Fig. 3) of control part 5.
As previously mentioned, the position of light-shielding pattern shoot part 43 is, light-shielding pattern 453a optically becomes the position of conjugate relation (because of light-shielding pattern 453a roughly is positioned at the aperture diaphragm position relatively via the surface of substrate 9, so light-shielding pattern shoot part 43 roughly is positioned at so-called entrance pupil position), the position of the light-shielding pattern in the image that light-shielding pattern shoot part 43 obtained for the corresponding position of the normal direction of the illumination light irradiation area of substrate 9 (below be called " tilt vector ").
In tilt vector calculating part 511, store tilt vector in advance (promptly towards vertical direction, the Z direction) position of centre of gravity of light-shielding pattern (calling " reference position " in the following text) in the image time, with the reference position is starting point, thereby tries to achieve the tilt vector of irradiation area on the substrate 9 by the vector that calculates the position of centre of gravity of light-shielding pattern to the gained image.
Specifically, with the distance setting between the surface of object lens 457 and substrate 9 is f, the angle (calling " inclination angle " in the following text) that vertical direction is become with tilt vector is set at θ, if being assumed to be the position of object lens 457 receives from the reverberation of substrate 9 and obtains the picture of light-shielding pattern 453a, then in the image that is obtained, the position of light-shielding pattern when the inclination angle of substrate 9 is 0 ° only along mobile with the corresponding direction (f * tan (2 θ)) that tilts.Therefore, in the image that obtains by light-shielding pattern shoot part 43, along moving in the distance that only multiply by (f * tan (2 θ)) with the multiplying power of the position of relative object lens 457 with the corresponding direction that tilts, this distance and direction become distance and the direction between said reference position and the detected position of centre of gravity.In tilt vector calculating part 511, based on from from the output of light-shielding pattern shoot part 43 and the reference position of trying to achieve to the surface of the vector of this position of centre of gravity and object lens 457 and substrate 9 apart from f, can correctly try to achieve the tilt vector (step S14) of substrate 9 thus.
On substrate 9, be set with a plurality of zones that should try to achieve tilt vector (calling " tilt vector is measured the zone " in the following text), the irradiation area that light source 41 penetrates light according to objective table travel mechanism 21 relatively substrate 9 move and towards next tilt vector mensuration regional (step S15).In stress determination device 1, the relative substrate 9 of irradiation area of the light that penetrates from light source 41 relatively moves continuously, measure the zone for a plurality of tilt vectors on the substrate 9, repeat the obtaining and the calculating of the tilt vector of substrate 9 (step S12～S15) of irradiation, light-shielding pattern 453a of light successively.
The tilt vector that whole tilt vector is measured the zone calculate finish after, when judging when not having next tilt vector and measuring the zone, utilize objective table travel mechanism 21 to stop to move (the step S16) of substrate 9.Then,, measure the tilt vector of the substrate 9 in the zone, try to achieve the surface configuration (step S17) of substrate 9 based on being tilted a plurality of tilt vectors on the substrate 9 that vector calculating part 511 tries to achieve by the surface configuration calculating part 512 of control part 5.
Specifically, the height that to measure the reference area of one of them in the zone as a plurality of tilt vectors (promptly, the coordinate figure of the Z direction among Fig. 1) is set at Za, with reference area and and reference area tilt vector of adjacency on the directions X measure on the horizontal direction between the zone (calling " neighboring region " in the following text) distance (promptly, distance on the directions X) is set at L, projection and the Z direction angulation of tilt vector on the ZX face of reference area and the neighboring region substrate 9 in separately is set at θ respectively
aAnd θ
b, then the height Zb of neighboring region can try to achieve by formula 1.
Zb＝Za+(tanθ
a+tanθ
b)L/2 … (1)
In surface configuration calculating part 512, measure the height in zone for each tilt vector, measure the tilt vector of the substrate 9 in zone and measure the height and the tilt vector in zone according to this tilt vector, begin to calculate in turn according to the distance order from reference area with the tilt vector that this tilt vector is measured regional adjacency.In addition, the height in one of them tilt vector mensuration zone can be the average height that try to achieve in a plurality of paths.For example, based on passing through one of them tilt vector to measure the zone a plurality of tilt vectors that set on the straight line that directions X extends measure the tilt vectors in zone and the height of trying to achieve, with measure mean value between the height that the tilt vector in zone tries to achieve based on measure a plurality of tilt vectors that set on the straight line that extends along the Y direction in the zone by this tilt vector, can be used as this tilt vector and measure regional tilt vector.
In stress determination device 1, for the smooth reference substrate of surface configuration (adopting the substrate that does not form film on the surface in the present embodiment), carry out in advance that (step S11～S17) tries to achieve and measures the height in corresponding zone, zone with each tilt vector of substrate 9 and be stored in the surface configuration calculating part 512 with above-mentioned same surface shape measuring operation.
In surface configuration calculating part 512, the height of measuring the zone from a plurality of tilt vectors of substrate 9 deducts a plurality of tilt vectors of the reference substrate of storage in advance and measures after the height in zone, and the region height that a plurality of tilt vectors of substrate 9 are measured between the zone is carried out the surface configuration of interpolation in the hope of substrate 9 by adopting spline method (spline interpolation) or Betsy that insertion (Bezier curve).Like this, correct the tilt vector of substrate 9 by the measurement result of utilizing reference substrate and measure the height in zone, thereby the systematic error that can correct stress determination device 1 is tried to achieve the surface configuration of substrate 9 with high accuracy.
Fig. 5 A is the figure of the surface configuration of expression substrate 9.The a plurality of tilt vectors that set on the diameter of discoideus substrate 9 have been shown in Fig. 5 A have measured the height in zone and the surface configuration of trying to achieve by the height in this a plurality of tilt vectors mensuration zone.Shown in Fig. 5 A, the position is bent downwardly as the side on the diametric(al) of measuring target (that is, left side among Fig. 5 A) in the substrate 9, and the position of opposite side is bent upwards.
The surface configuration of representing the substrate 9 that stress determination device 1 is tried to achieve among Fig. 5 A with solid line 901.And with dashed lines 902 expressions utilize the measurement result of the surface configuration of the resulting substrate 9 of other determinator as a comparative example in Fig. 5 A.In the determinator of comparative example, substrate is placed on the objective table with autofocus mechanism, after focusing on a plurality of positions by the Lifting carrying platform on substrate, try to achieve the surface configuration of substrate based on the objective table height after these a plurality of locational focusing.
Shown in Fig. 5 A, in the resulting measurement result of the determinator that utilizes comparative example, near although the position central authorities of the in fact smooth substrate 9 in conduct surface, also can produce bigger concavo-convex owing to the return difference (backlash) of autofocus mechanism, but, in stress determination device 1, then can measure the surface configuration corresponding accurately with the true form of substrate 9.
Fig. 5 B formula is represented the figure according to the measurement result of the surface configuration of another substrate of the determinator mensuration of stress determination device 1 and comparative example.On the surface of this substrate, be formed with patterns such as Wiring pattern, form film on this pattern certainly.On the substrate shown in Fig. 5 B, the two side portions on the substrate diameter direction all is bent upwards.
In Fig. 5 B, with the measurement result that solid line 903 expression is obtained by stress determination device 1, the measurement result that dotted line 904 expressions are obtained by the determinator of comparative example.Shown in Fig. 5 B, even in to the mensuration that forms figuratum substrate, stress determination device 1 also can be with the mensuration surface configuration higher than the determinator precision of comparative example.
If the surface configuration of substrate 9 is determined, then pass through the radius of curvature calculating part 513 (with reference to Fig. 3) of control part 5, based near the surface configuration the stress determination zone that sets on the substrate 9 (for example based on 4 height around the height in stress determination zone and the stress determination zone), can try to achieve the radius of curvature (step S18) in this stress determination zone.The curvature at this position in the cross section that near being judged as the stress determination zone in advance position is blocked by the ZX face, with the cross section of being blocked by the ZY face in the curvature situation about equally at this position under, the radius of curvature in stress determination zone then can and be positioned at the height of 2 points of both sides on the directions X in this stress determination zone and tries to achieve based on the height in stress determination zone.The stress determination zone can be consistent with a plurality of tilt vectors mensuration zone on the substrate 9, also can be set in a plurality of tilt vectors and measure between the zone.Also have, also can on substrate 9, set a plurality of stress determinations zone.
If try to achieve the radius of curvature in stress determination zone, then (promptly according to ellipsometer test 3 and the first thickness calculating part 515 or optical interference unit 4 and the second thickness calculating part 516, determining film thickness portion according to stress determination device 1), can be by the thickness (step S19) on the substrate 9 in this stress determination zone of optical method measuring.Below, the determining film thickness that adopts ellipsometer test 3 to carry out is described, again the determining film thickness that utilizes optical interference unit 4 to carry out is described afterwards.
When measuring thickness by ellipsometer test 3, at first, by objective table travel mechanism 21, speculum 25 on the objective table 2 moves to the irradiation position of the laser that light source cell 31 penetrates, the laser that light source cell 31 penetrates mirror 25 reflections that are reflected are imported in the optical splitter 42 of optical interference unit 4 then.In optical splitter 42, obtain the spectral intensity of the light of reception, its result carries out the affirmation (calling " optical maser wavelength calibration " in the following text) of semiconductor laser 312 emitting laser wavelength in fact.The optical maser wavelength of being obtained transfers to the first thickness calculating part 515 (with reference to Fig. 3) of control part 5, to use when the determining film thickness that undertaken by ellipsometer test 3.
Then, light source 41 outgoing illumination light from optical interference unit 4, and utilize substrate imaging portion 44 to obtain the image of substrate 9, according to this image, objective table travel mechanism 21 moves substrate 9 and objective table 2 together, by adopting this mode, can make from the irradiation position of the polarised light of the light source cell 31 of ellipsometer test 3 consistent with the stress determination zone on the substrate 9.When the position adjustment finished, polarised light to substrate 9, and utilized light receiving unit 32 to obtain the polarization of reflected light state from light source cell 31 outgoing.
The first thickness calculating part 515 (with reference to Fig. 3) at control part 5, the surface configuration of the substrate 9 of being tried to achieve by surface configuration calculating part 512 can be calculated the tilt vector in stress determination zone, thereby tries to achieve the correct incidence angle in the stress determination zone of relative polarised light.Then, utilize the incidence angle of this polarised light and the polarization light wavelength that penetrates by the light source cell 31 that optical maser wavelength rectification mode obtains, and the polarization state that is obtained according to light receiving unit 32 (more precisely, also utilize the polarized state of light of light source cell 31 ejaculations), can try to achieve the thickness in the substrate 9 upper stresses mensuration zone.In addition, in any the corresponding to occasion in stress determination zone and a plurality of tilt vectors mensuration zone, can in the mensuration of tilt vector, obtain polarization of reflected light state from substrate 9.
In stress determination device 1, carry out before being aligned in determining film thickness by optical maser wavelength ellipsometer test 3, even thereby cause that change owing to environment temperature and the characteristic variations of each structure of light source cell 31 etc. light source cell 31 penetrates under the situation that light wavelengths change, and also can try to achieve thickness with good precision.In addition, the gradient of substrate 9 is corrected, thereby can try to achieve thickness in the stress determination zone with good precision by the surface configuration of utilizing the substrate 9 of trying to achieve by surface configuration calculating part 512.
Below the determining film thickness that utilizes optical interference unit 4 to carry out is described.When utilizing optical interference unit 4 to carry out determining film thickness, at first, in optical interference unit 4, the illumination light that will penetrate from light source 41 is via the stress determination zone of optical system 45 guiding substrates 9, and will be directed to optical splitter 42 from the reverberation of substrate 9.Then, obtain catoptrical spectral intensity by optical splitter 42, the spectral intensity data of substrate 9 are transferred to the second thickness calculating part 516 of control part 5.
In stress determination device 1,, obtain the spectral intensity of the substrate that carries out reference (be silicon substrate in the present embodiment, call " reference substrate " in the following text) in advance and be stored in the second thickness calculating part 516 according to optical interference unit 4.And, with the silicon dioxide (SiO that generates on the reference substrate
2) the thickness of natural oxide film determine in advance and be stored in the second thickness calculating part 516 by the ellipsometer test 3 and the first thickness calculating part 515.In the second thickness calculating part 516, calculate (vertically) spectral reflectivity on the reference substrate by the thickness of the natural oxide film that is determined by ellipsometer test 3 by K-theoretic operation K, store in advance as " theoretical spectral reflectivity ".
In the second thickness calculating part 516, try to achieve the spectral reflectivity of substrate 9 by the spectral intensity of reference substrate and substrate 9 based on the theoretical spectral reflectivity of reference substrate.At this, if the theoretical spectral reflectivity of reference substrate is set at Rc (λ), the spectral intensity of reference substrate is set at Ic (λ), the spectral intensity of substrate 9 is set at Im (λ), the spectral reflectivity of substrate 9 is set at Rm (λ), and then the spectral reflectivity Rm (λ) of substrate 9 can be tried to achieve by formula 2.
Rm(λ)＝(Im(λ)/Ic(λ))×Rc(λ) … (2)
That is, the spectral intensity of the substrate 9 that can be tried to achieve by optical interference unit 4 of the spectral reflectivity of substrate 9 multiply by the spectral intensity of the theoretical spectral reflectivity of reference substrate and reference substrate than trying to achieve.In the second thickness calculating part 516, can also try to achieve thickness in the stress determination zone on the substrate 9 with good precision by the spectral reflectivity of substrate 9.In addition, measure regional any when consistent with a plurality of tilt vectors, can in the mensuration of tilt vector, obtain catoptrical spectral intensity from substrate 9 in stress determination zone.
As mentioned above, when determining film thickness finishes, based in step S18, S19, passing through radius of curvature calculating part 513 and determining film thickness portion (promptly, the ellipsometer test 3 and the first thickness calculating part 515 or optical interference unit 4 and the second thickness calculating part 516) radius of curvature and the thickness in the stress determination zone of trying to achieve, and the thickness of the substrate 9 import in advance of the input part 56 (with reference to Fig. 2) by control part 5, utilize the Stress calculation portion 514 of control part 5 to try to achieve the interior stress (step S20) of film in the stress determination zone.At this, if radius of curvature in the stress determination zone and thickness are set at R and h respectively
f, be h with the thickness setting of substrate 9, the Young's modulus of substrate 9 (Young ' s modulus) and Poisson's ratio (Poisson ' sratio) be set at E and ν respectively, then the film internal stress σ in the stress determination zone can be tried to achieve by formula 3.
σ＝(E/(1-ν))×(h
2/(6Rhf)) …(3)
As mentioned above, in stress determination device 1, by utilizing light-shielding pattern shoot part 43 to obtain to be disposed at the picture of the light-shielding pattern 453a of aperture diaphragm portion 453, the tilt vector of the substrate 9 in a plurality of tilt vectors mensuration zone on the substrate 9 can be tried to achieve thus, the surface configuration of substrate 9 can be tried to achieve based on these a plurality of tilt vectors.Then, according to the radius of curvature in the stress determination zone of trying to achieve based on this surface configuration, utilize the thickness in this stress determination zone that ellipsometer test 3 or optical interference unit 4 tried to achieve and the thickness of substrate 9, can be in the hope of the film internal stress in the stress determination zone.
In stress determination device 1, tilt vector when measuring the tilt vector in zone asking for substrate 9, via than the object lens 457 of low range with rayed to substrate 9, received by light-shielding pattern shoot part 43 from the reverberation of substrate 9, thereby obtain the picture of light-shielding pattern 453a.As mentioned above, because the depth of focus of object lens 457 is bigger, even take place under the situation of skew more or less at above-below direction from reference area (zone of promptly focusing) so measure the zone at the tilt vector on the substrate 9, if it still is positioned at the focal depth range of object lens 457, then can not exert an influence to the imaging relations between light-shielding pattern 453a and the light-shielding pattern shoot part, can also be to obtain light-shielding pattern 453a accurately.
In addition, owing on substrate 9, roughly be directional light,, also can obtain the picture of light-shielding pattern 453a with good precision even tilt vector is measured the zone under focal depth range existence situation about departing from more or less from the light of object lens 457 guiding substrates 9.Therefore, a plurality of tilt vectors are measured when carrying out the mensuration of tilt vector in each regional zone on substrate 9, each tilt vector is measured the operation of need not focusing in the zone, just can measure rapidly and high-precision, and can rapid and high-precision surface configuration of trying to achieve substrate 9.
In the optical interference unit 4 of stress determination device 1, the picture by the white light of light source 41 ejaculations to light-shielding pattern 453a carries out imaging.Therefore, even under the situation that the film on substrate 9 and the substrate 9 is formed by the material of the light that absorbs particular range of wavelengths, the also light of the wave-length coverage wave-length coverage in addition that can be absorbed according to substrate 9 grades and the picture of light-shielding pattern 453a is imaged on the light-shielding pattern shoot part 43.Like this, no matter which kind of material substrate 9 and film adopt, all can be easily and try to achieve the tilt vector and the surface configuration of the various substrate that is formed with various films accurately.
Further, in optical interference unit 4, though light-shielding pattern 453a optically becomes conjugate relation with light-shielding pattern shoot part 43, light-shielding pattern 453a does not have and 9 one-tenth conjugate relations of substrate, so the picture of light-shielding pattern 453a does not image on the substrate 9.Therefore, even be formed with pattern on the substrate 9, the picture of the light-shielding pattern 453a that light-shielding pattern shoot part 43 is obtained is not subjected to the influence of pattern on the substrate 9 yet.Therefore, no matter there is on the substrate 9 pattern-free also can be easily and try to achieve tilt vector and surface configuration on the various substrates accurately.
Like this, in stress determination device 1, because can be easily and promptly and the good surface configuration of trying to achieve substrate 9 of precision, so based on the radius of curvature in the stress determination zone of trying to achieve, thickness in the stress determination zone and the thickness of substrate 9 according to this surface configuration, can be easily and promptly and precision try to achieve film internal stress in the stress determination zone well.
In the mensuration of the tilt vector in the stress determination device 1, adopt to make the relative substrate 9 of illumination light irradiation area do the mode that relatively moves continuously, can more promptly obtain the gradient that a plurality of tilt vectors are measured substrate 9 in the zone according to optical interference unit 4.Its result can further try to achieve film internal stress in the surface configuration of substrate 9 and the stress determination zone rapidly.
In the determining film thickness in the stress determination device 1, by utilizing ellipsometer test 3, can high-precision measuring than the thickness of film.In addition, carry out determining film thickness by adopting optical interference unit 4, can high-precision measuring than the thickness of thick film or multilayer film.In the optical interference unit 4, owing to can utilize the optical system 45 of the surface shape measuring that is used for substrate 9 to carry out determining film thickness, so can make the designs simplification of stress determination device 1.
If stress determination device 1 only is used to keep objective table 2, objective table travel mechanism 21, light source 41, optical system 45, light-shielding pattern 453a and the light-shielding pattern shoot part 43 of optical interference unit 4 and the tilt vector calculating part 511 and the surface configuration calculating part 512 of control part 5 of substrate 9, then stress determination can not be carried out, but the surface-profile measuring instrument of the surface configuration of measuring substrate 9 can be used as.
As mentioned above, in stress determination device 1, need not repeat a plurality of tilt vectors are measured the picture that zone focus just can be obtained light-shielding pattern 453a, thereby can be rapidly and try to achieve the tilt vector of substrate 9 accurately, in addition, no matter how and on the substrate 9 material of substrate 9 and film has pattern-free, all can be easily and promptly try to achieve the tilt vector of various substrates accurately.Therefore, even if when stress determination device 1 used as surface-profile measuring instrument, too can be and easily and promptly try to achieve the surface configuration of substrate 9 with high accuracy based on the tilt vector of substrate 9.
In addition, as mentioned above, in the mensuration of the tilt vector in the stress determination device 1, move relative to substrate 9, can more promptly obtain the gradient that a plurality of tilt vectors are measured substrate 9 in the zone thus by making the illumination light irradiation area that adopts optical interference unit 4 to obtain.Its result can further promptly try to achieve the surface configuration of substrate 9.
Next the stress determination device to second embodiment of the invention describes.Fig. 6 is the figure of the stress determination device 1a structure of expression second execution mode.As shown in Figure 6, stress determination device 1a is except the structure with stress determination device 1 shown in Figure 1, also have the automatic focusing detecting unit (calling " AF detecting unit " in the following text) 46 as distance detecting portion, this distance detecting portion is used for detecting the object lens 457 and the distance on the above-below direction between the objective table 4 (being the Z direction of Fig. 6) of optical interference unit 4 or remains in substrate 9 surfaces on the objective table 2 and the distance on the above-below direction between the object lens 457.Other structures and stress determination device 1 shown in Figure 1 are roughly the same, adopt same symbol Reference numeral to represent in the following explanation.In addition, utilize film internal stress on the substrate 9 that stress determination device 1a carries out measure flow process and first execution mode also much the same.In addition, in Fig. 6, omit the diagram of control part 5 in order to simplify accompanying drawing.
As shown in Figure 6, AF detecting unit 46 comprises semiconductor laser 461, the cylindrical lens 462 of outgoing beam and adopts PSD (Position Sensitive Detector: the AF test section 463 of the position of the light of element testing reception position sensitive detector).Under the state that substrate 9 is placed on the objective table 2, by the light beam of semiconductor laser 461 outgoing surface via the object lens 457 directive substrates 9 of optical system 45.From the beam reflection light of substrate 9 cylindrical lens 462, and further be directed to AF test section 463 via object lens 457 guiding AF detecting units 46.In AF test section 463, detect distance between object lens 457 and substrate 9 surfaces according to catoptrical light receiving position from substrate 9.In addition, under substrate 9 is not placed in state on the objective table 2, the distance between the surface of objective lens 457 and objective table 2.
Fig. 7 is the block diagram of function of the control part 5 of expression stress determination device 1a, also shows other structure among the figure.As shown in Figure 7, the control part 5 of stress determination device 1a also comprises the substrate thickness calculating part 517 (that is object THICKNESS CALCULATION portion) that is used to ask for substrate 9 thickness.Other structure is identical with Fig. 3.
During the film internal stress of the thickness of the substrate 9 of being tried to achieve by substrate thickness calculating part 517 on the substrate 9 that utilizes stress determination device 1a to carry out measured, the Stress calculation portion 514 that utilizes shown in the step S20 of Fig. 4 that is used for carried out Stress calculation.At this moment, omitted of the input of the thickness of substrate 9 from the input part 56 of control part 5.
In the stress determination device 1a of second execution mode and first execution mode same, can be easily and promptly try to achieve substrate 9 upper stresses and measure film internal stress in the zone with good accuracy.In stress determination device 1a, especially can try to achieve the thickness of substrate 9 with high accuracy by AF detecting unit 46, therefore can try to achieve film internal stress in the stress determination zone with better precision.
In stress determination device 1a, at mobile beginning (Fig. 4: step S11) also utilize AF detecting unit 46 in the focusing of carrying out before of substrate 9.When carrying out at substrate 9 focusing, based on by the distance between the surface of AF detecting unit 46 detected object lens 457 and substrate 9, substrate 9 moves up at upper and lower together by lifting mechanism for objective table 24 and objective table 2, and the surface of substrate 9 is positioned at the focal depth range of object lens 457.
In stress determination device 1a, can also be when the tilt vector of each tilt vector on the substrate 9 being measured the zone is measured, utilize objective table travel mechanism 21 to stop to move of substrate 9, focus by AF detecting unit 46 and lifting mechanism for objective table 24.At this moment, because the depth of focus of object lens 457 is bigger, also have from the light of object lens 457 guiding substrates 9 and be directional light basically, thereby can control the desired precision of focusing lower, like this, compare with the determinator of trying to achieve the substrate radius of curvature by the optical lever method that needs high accuracy focusing etc., can shorten the focusing required time.Its result can shorten the mensuration and the film internal stress on the substrate 9 of the surface configuration of substrate 9 and measure the required time.
Although more than embodiment of the present invention is illustrated, the present invention is not limited only to above-mentioned execution mode, it can make all distortion.
For example, in the stress determination device of above-mentioned execution mode also can be, under the state that objective table 2 is fixed, the irradiation area of light on substrate 9 that the light that the light source 41 of optical interference unit 4 penetrates and the light source cell 31 of ellipsometer test 3 penetrate moves relative to substrate 9.
Light-shielding pattern 453a need not to be configured on the position of aperture diaphragm portion 453, from the light source 41 of optical interference unit 4 on the light path of substrate 9, be configured in the aperture diaphragm position optically to become on the position of conjugate relation to get final product.In addition, light-shielding pattern 453a can also be the pattern that only interdicts the light of specific wavelength, at this moment, can dispose the filter that only sees through special wavelength light in the light-shielding pattern shoot part 43.
Be not limited only to circularly polarized light from the polarised light of the light source cell 31 directive substrates 9 of ellipsometer test 3, also can utilize the polarised light (for example 45 ° linear polarization) that becomes suitably different situations as required.And, the light of light source cell 31 outgoing is not limited to the light beam of semiconductor laser as light source, for example, also can be from light source cell 31 outgoing white lights, thereby in light receiving unit 32, receive the reverberation of this white light by the photodiode 322 that replaces optical splitter to be provided with.
In the stress determination device 1a of second execution mode, the light that is used for the distance detection between object lens 457 and substrate 9 or the objective table 2 in the AF detecting unit 46, need not necessarily outgoing from AF detecting unit 46, for example can be, the light that penetrates from the light source 41 of optical interference unit 4 is by substrate 9 or objective table 2 reflections, thereby obtain target image via object lens 457 guiding AF test sections 463, focus automatically according to the definition of image.Like this, at AF detecting unit 46, thus the simplification that light objective lens 457 by utilizing object lens 457 outgoing and the distance between substrate 9 or the objective table 2 can implementation structures.
Substrate 9 is not limited only to semiconductor substrate, for example also can be employed glass substrate in liquid crystal indicator or other flat panel display unit etc.The stress determination device of above-mentioned execution mode also can be used for the surface shape measuring and the film internal stress on this object of other the various objects outside the substrate and measure.
More than the present invention has been made detailed description and explanation, but described explanation only is exemplary and be not determinate.Therefore, can be understood as in not departing from the scope of the present invention, various deformation and mode can be arranged and all should comprise in the present invention.
Claims (15)
1. surface-profile measuring instrument is used for the surface configuration of determination object thing, it is characterized in that having:
Light source, it penetrates light;
Optical system, its light that above-mentioned light source is penetrated be via the irradiation area on the object lens guiding object, and will be from the reverberation of above-mentioned irradiation area via above-mentioned object lens guiding assigned position;
Light-shielding pattern, its from above-mentioned light source to the light path of above-mentioned irradiation area, be disposed at the position that optically roughly becomes conjugate relation with the aperture diaphragm position;
Shoot part, it obtains the picture of the above-mentioned light-shielding pattern that images in the afore mentioned rules position;
The tilt vector calculating part, it tries to achieve the tilt vector of the above-mentioned irradiation area normal direction of expression based on the output of above-mentioned shoot part;
Travel mechanism, it makes above-mentioned irradiation area move relative to above-mentioned object; And
The surface configuration calculating part, the tilt vector in a plurality of zones on its above-mentioned object of trying to achieve based on above-mentioned tilt vector calculating part is tried to achieve the surface configuration of above-mentioned object.
2. a stress determination device is used for the film internal stress on the determination object thing, it is characterized in that having:
Light source, it penetrates light;
Optical system, its light that above-mentioned light source is penetrated be via the irradiation area on the object lens guiding object, and will be from the reverberation of above-mentioned irradiation area via above-mentioned object lens guiding assigned position;
Light-shielding pattern, its from above-mentioned light source to the light path of above-mentioned irradiation area, be disposed at the position that optically roughly becomes conjugate relation with the aperture diaphragm position;
Shoot part, it obtains the picture of the above-mentioned light-shielding pattern that images in the afore mentioned rules position;
The tilt vector calculating part, it tries to achieve the tilt vector of the above-mentioned irradiation area normal direction of expression based on the output of above-mentioned shoot part;
Travel mechanism, it makes above-mentioned irradiation area move relative to above-mentioned object;
The surface configuration calculating part, the tilt vector in a plurality of zones on its above-mentioned object of trying to achieve based on above-mentioned tilt vector calculating part is tried to achieve the surface configuration of above-mentioned object;
The radius of curvature calculating part, it tries to achieve the radius of curvature in the stress determination zone on the above-mentioned object based on the above-mentioned surface configuration that above-mentioned surface configuration calculating part is tried to achieve;
Determining film thickness portion, it is by the thickness of the film on the above-mentioned object of optical method measuring; And
Stress calculation portion, the radius of curvature and the thickness in the above-mentioned stress determination zone that it is tried to achieve based on above-mentioned radius of curvature calculating part and above-mentioned determining film thickness portion are tried to achieve the stress in the above-mentioned film in the above-mentioned stress determination zone.
3. stress determination device as claimed in claim 2 is characterized in that, above-mentioned determining film thickness portion has:
Light accepting part, the reverberation that its light that receives above-mentioned light source ejaculation is reflected by above-mentioned irradiation area;
The thickness calculating part, it tries to achieve the thickness of the above-mentioned film in the above-mentioned irradiation area based on the output of above-mentioned light accepting part by optical interferometry.
4. stress determination device as claimed in claim 3 is characterized in that, above-mentioned determining film thickness portion also has:
Light source cell, it has another light source, penetrates the light that polarization takes place to above-mentioned object;
Light receiving unit, it receives the reflection of light light from the above-mentioned generation polarization of above-mentioned object, thereby obtains above-mentioned polarization of reflected light state;
The thickness calculating part, it tries to achieve the thickness of the above-mentioned film on the above-mentioned object based on the polarization state that above-mentioned light receiving unit obtained.
5. stress determination device as claimed in claim 2 is characterized in that, above-mentioned determining film thickness portion has:
Light source cell, it has another light source, penetrates the light that polarization takes place to above-mentioned object;
Light receiving unit, it receives the reflection of light light from the above-mentioned generation polarization of above-mentioned object, thereby obtains above-mentioned polarization of reflected light state;
The thickness calculating part, it tries to achieve the thickness of the above-mentioned film on the above-mentioned object based on the polarization state that above-mentioned light receiving unit obtained.
6. as each described stress determination device in the claim 2 to 5, it is characterized in that also having:
Maintaining part, it is used to keep above-mentioned object;
Distance detecting portion, it utilizes the light from above-mentioned object lens outgoing, detects do not keeping above-mentioned object lens under the state of object and the distance between the above-mentioned maintaining part and above-mentioned object lens and by the distance between the above-mentioned object that above-mentioned maintaining part kept;
Object THICKNESS CALCULATION portion, it is based on detected above-mentioned object lens of above-mentioned distance detecting portion and the distance between the distance between the above-mentioned object and above-mentioned object lens and the above-mentioned maintaining part, try to achieve the thickness of above-mentioned object, the thickness of above-mentioned object is used for the calculating of above-mentioned Stress calculation portion for above-mentioned film internal stress.
7. surface shape measuring method is used for the surface configuration of determination object thing, it is characterized in that, comprising:
A) operation, the light that light source is penetrated is via the irradiation area of the irradiation optical system with object lens to the object;
B) operation, on light path from above-mentioned light source to above-mentioned object, optically roughly become the position configuration of conjugate relation that light-shielding pattern is arranged with the aperture diaphragm position, will be from the above-mentioned reflection of light light of above-mentioned irradiation area via above-mentioned object lens guiding assigned position, and obtain the picture of the above-mentioned light-shielding pattern that images in the afore mentioned rules position by shoot part;
C) operation is repeating above-mentioned a) operation and above-mentioned b when above-mentioned object moves above-mentioned irradiation area) operation, and, try to achieve the tilt vector of the normal direction in a plurality of zones on the above-mentioned object of expression based on the output of above-mentioned shoot part;
D) operation based on the tilt vector in above-mentioned a plurality of zones, is tried to achieve the surface configuration of above-mentioned object.
8. surface shape measuring method as claimed in claim 7 is characterized in that, at above-mentioned c) in the operation, carry out relatively moving continuously for the above-mentioned object of above-mentioned irradiation area.
9. a stress determination method is used for the film internal stress on the determination object thing, comprising:
A) operation, the light that light source is penetrated is via the irradiation area of the irradiation optical system with object lens to the object;
B) operation, on light path from above-mentioned light source to above-mentioned object, optically roughly become the position configuration of conjugate relation that light-shielding pattern is arranged with the aperture diaphragm position, will be from the above-mentioned reflection of light light of above-mentioned irradiation area via above-mentioned object lens guiding assigned position, and obtain the picture of the above-mentioned light-shielding pattern that images in the afore mentioned rules position by shoot part;
C) operation is repeating above-mentioned a) operation and above-mentioned b when above-mentioned object moves above-mentioned irradiation area) operation, and, try to achieve the tilt vector of the normal direction in a plurality of zones on the above-mentioned object of expression based on the output of above-mentioned shoot part;
D) operation based on the tilt vector in above-mentioned a plurality of zones, is tried to achieve the surface configuration of above-mentioned object;
E) operation based on above-mentioned surface configuration, is tried to achieve the radius of curvature in the stress determination zone on the above-mentioned object;
F) operation is by the thickness of the film in the above-mentioned stress determination of the optical method measuring zone;
G) operation based on the above-mentioned radius of curvature and the above-mentioned thickness in above-mentioned stress determination zone, is tried to achieve the stress in the above-mentioned film in the above-mentioned stress determination zone.
10. stress determination method as claimed in claim 9 is characterized in that, at above-mentioned c) in the operation, carry out relatively moving continuously for the above-mentioned object of above-mentioned irradiation area.
11., it is characterized in that above-mentioned f as claim 9 or 10 described stress determination methods) operation comprises:
H) operation, the illumination that above-mentioned light source is penetrated is mapped to above-mentioned stress determination zone;
I) operation receives the above-mentioned reflection of light light from above-mentioned stress determination zone, thereby obtains above-mentioned catoptrical spectral intensity;
J) operation is based on by above-mentioned i) the above-mentioned catoptrical spectral intensity obtained of operation, try to achieve the thickness of the above-mentioned film in the above-mentioned stress determination zone by optical interferometry.
12. stress determination method as claimed in claim 11 is characterized in that, at above-mentioned g) also comprise before the operation:
K) operation is utilized the light from above-mentioned object lens outgoing, detects above-mentioned object lens and keeps distance between the maintaining part of above-mentioned object;
L) operation is utilized the light from above-mentioned object lens outgoing, detects above-mentioned object lens and by distance between the above-mentioned object that above-mentioned maintaining part kept;
M) operation is based on by above-mentioned k) operation and above-mentioned 1) the detected two kinds of distances of operation, try to achieve the thickness of above-mentioned object, the thickness of above-mentioned object is used for above-mentioned g) operation is for the calculating of above-mentioned film internal stress.
13., it is characterized in that above-mentioned f as claim 9 or 10 described stress determination methods) operation comprises:
N) operation, the illumination of the generation polarization that another light source is penetrated is mapped to above-mentioned stress determination zone;
O) operation receives the reflection of light light from the above-mentioned generation polarization in above-mentioned stress determination zone, thereby obtains above-mentioned polarization of reflected light state;
P) operation is based on by above-mentioned o) the above-mentioned polarization of reflected light state that obtains of operation, try to achieve the thickness of the above-mentioned film in the above-mentioned stress determination zone.
14. stress determination method as claimed in claim 13 is characterized in that, at above-mentioned g) also comprise before the operation:
K) operation is utilized the light from above-mentioned object lens outgoing, detects above-mentioned object lens and keeps distance between the maintaining part of above-mentioned object;
L) operation is utilized the light from above-mentioned object lens outgoing, detects above-mentioned object lens and by distance between the above-mentioned object that above-mentioned maintaining part kept;
M) operation is based on by above-mentioned k) operation and above-mentioned 1) the detected two kinds of distances of operation, try to achieve the thickness of above-mentioned object, the thickness of above-mentioned object is used for above-mentioned g) operation is for the calculating of above-mentioned film internal stress.
15., it is characterized in that, at above-mentioned g as claim 9 or 10 described stress determination methods) also comprise before the operation:
K) operation is utilized the light from above-mentioned object lens outgoing, detects above-mentioned object lens and keeps distance between the maintaining part of above-mentioned object;
L) operation is utilized the light from above-mentioned object lens outgoing, detects above-mentioned object lens and by distance between the above-mentioned object that above-mentioned maintaining part kept;
M) operation is based on by above-mentioned k) operation and above-mentioned 1) the detected two kinds of distances of operation, try to achieve the thickness of above-mentioned object, the thickness of above-mentioned object is used for above-mentioned g) operation is for the calculating of above-mentioned film internal stress.
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| CNB2007101700650A Expired - Fee Related CN100550335C (en) | 2006-11-13 | 2007-11-09 | Surface-profile measuring instrument and method and stress determination device and method |
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| Country | Link |
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| JP (1) | JP5459944B2 (en) |
| KR (1) | KR100967470B1 (en) |
| CN (1) | CN100550335C (en) |
| TW (1) | TWI360647B (en) |
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| CN103337274A (en) * | 2008-10-21 | 2013-10-02 | 应用材料公司 | Ultraviolet reflector with coolant gas holes and method |
| CN104062049A (en) * | 2014-06-13 | 2014-09-24 | 京东方科技集团股份有限公司 | Substrate detection method and device |
| TWI502177B (en) * | 2014-12-12 | 2015-10-01 | Univ Nan Kai Technology | A heterodyne interferometric ellipsometry based on optical addition and subtraction |
| CN105492938A (en) * | 2013-08-30 | 2016-04-13 | 富士胶片株式会社 | Stress display member and strain measurement method using stress display member |
| CN105593636A (en) * | 2013-11-06 | 2016-05-18 | 株式会社高永科技 | Method for compensating field of view during substrate inspection |
| CN108827514A (en) * | 2018-07-19 | 2018-11-16 | 天津大学 | A kind of method of laser nondestructive characterisation (NDC) silica membrane residual stress |
| CN111999247A (en) * | 2019-05-27 | 2020-11-27 | 住友化学株式会社 | Method and apparatus for measuring warpage of optical film |
| CN113295106A (en) * | 2021-05-26 | 2021-08-24 | 清华大学 | Double-optical comb speckle interferometry system and method |
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| JP6363382B2 (en) * | 2014-04-14 | 2018-07-25 | 大塚電子株式会社 | Film thickness measuring apparatus and method |
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| JPS59203906A (en) * | 1983-05-04 | 1984-11-19 | Mitsubishi Electric Corp | Detector for inclination of plane |
| JPS63223508A (en) * | 1987-03-13 | 1988-09-19 | Canon Inc | Tile angle measuring method |
| JP2000009553A (en) * | 1998-06-26 | 2000-01-14 | Toshiba Corp | Thin film estimating device, thin film estimating method, semiconductor simulation apparatus, semiconductor simulation method, storage medium which stores thin film estimation program and can be computer-read, and simulation program |
| JP4027605B2 (en) * | 2001-01-26 | 2007-12-26 | 株式会社リコー | Optical surface shape measuring method and apparatus, and recording medium |
| JP2003148925A (en) * | 2001-11-12 | 2003-05-21 | Lasertec Corp | Depth measuring apparatus and film thickness measuring apparatus |
| US6678055B2 (en) * | 2001-11-26 | 2004-01-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for measuring stress in semiconductor wafers |
| JP3995579B2 (en) * | 2002-10-18 | 2007-10-24 | 大日本スクリーン製造株式会社 | Film thickness measuring device and reflectance measuring device |
| JP4547669B2 (en) * | 2004-12-14 | 2010-09-22 | 株式会社ニコン | Height measuring device |
| JP2007127566A (en) * | 2005-11-07 | 2007-05-24 | Dainippon Screen Mfg Co Ltd | Substrate measuring instrument |
-
2007
- 2007-09-13 JP JP2007237381A patent/JP5459944B2/en not_active Expired - Fee Related
- 2007-10-29 KR KR1020070108786A patent/KR100967470B1/en active IP Right Grant
- 2007-11-07 TW TW096141970A patent/TWI360647B/en not_active IP Right Cessation
- 2007-11-09 CN CNB2007101700650A patent/CN100550335C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103337274A (en) * | 2008-10-21 | 2013-10-02 | 应用材料公司 | Ultraviolet reflector with coolant gas holes and method |
| CN105492938A (en) * | 2013-08-30 | 2016-04-13 | 富士胶片株式会社 | Stress display member and strain measurement method using stress display member |
| CN105593636A (en) * | 2013-11-06 | 2016-05-18 | 株式会社高永科技 | Method for compensating field of view during substrate inspection |
| CN105593636B (en) * | 2013-11-06 | 2019-10-01 | 株式会社高永科技 | Check measurement regional compensation method when substrate |
| CN104062049A (en) * | 2014-06-13 | 2014-09-24 | 京东方科技集团股份有限公司 | Substrate detection method and device |
| TWI502177B (en) * | 2014-12-12 | 2015-10-01 | Univ Nan Kai Technology | A heterodyne interferometric ellipsometry based on optical addition and subtraction |
| CN108827514A (en) * | 2018-07-19 | 2018-11-16 | 天津大学 | A kind of method of laser nondestructive characterisation (NDC) silica membrane residual stress |
| CN111999247A (en) * | 2019-05-27 | 2020-11-27 | 住友化学株式会社 | Method and apparatus for measuring warpage of optical film |
| CN111999247B (en) * | 2019-05-27 | 2024-06-07 | 住友化学株式会社 | Method and device for measuring warpage of optical film |
| CN113295106A (en) * | 2021-05-26 | 2021-08-24 | 清华大学 | Double-optical comb speckle interferometry system and method |
| CN113295106B (en) * | 2021-05-26 | 2022-07-15 | 清华大学 | Double-optical comb speckle interferometry system and method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI360647B (en) | 2012-03-21 |
| TW200834048A (en) | 2008-08-16 |
| KR100967470B1 (en) | 2010-07-07 |
| JP5459944B2 (en) | 2014-04-02 |
| CN100550335C (en) | 2009-10-14 |
| KR20080043223A (en) | 2008-05-16 |
| JP2008145417A (en) | 2008-06-26 |
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