CN101175628A - Technique for producing optics lens - Google Patents
Technique for producing optics lens Download PDFInfo
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- CN101175628A CN101175628A CNA2006800170044A CN200680017004A CN101175628A CN 101175628 A CN101175628 A CN 101175628A CN A2006800170044 A CNA2006800170044 A CN A2006800170044A CN 200680017004 A CN200680017004 A CN 200680017004A CN 101175628 A CN101175628 A CN 101175628A
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Abstract
A semiconductor substrate is anodized to be shaped into an optical lens. Prior to being anodized, the substrate is finished with an anode pattern on its bottom surface so as to be consolidated into a unitary structure in which the anode pattern is precisely reproduced on the substrate. The anodization utilizes an electrolytic solution which etches out oxidized portion as soon as it is formed as a result of the anodization, to thereby develop a porous layer in a pattern in match with the anode pattern. The anode pattern brings about an in-plane distribution of varying electric field intensity by which the porous layer develops into a shape complementary to a desired lens profile. Upon completion of the anodization, the semiconductor substrate is shaped into the lens by etching out the porous layer and the anode pattern from the substrate.
Description
Technical field
The present invention relates to a kind of technology of making optical lens by the main body of Semiconductor substrate.
Background technology
Disclose a kind of prior art in the open No.55-13960 of Japan Patent, it relates to a kind of technology of making micro-structural by anodization on the surface of Semiconductor substrate.Anodization is used for the upper surface at electrolyte oxidation substrate.With with the corresponding pattern of the arrangement of anode, optionally in upper surface, carry out oxidation.This anode is independent of substrate and forms, and keeps in touch with the lower surface of substrate, thereby stays oxidized portion on the upper surface top of substrate.After this, remove oxidized portion, stay projection with upper surface at substrate.This technology is enough to form the profile or the little surface imperfection thing of the degree of depth of relative thin.But, have been found that and in fact be difficult to obtain needed thick profile when making optical lens with smooth surface, this is that the blocking anode electric current passes through substrate because oxidized portion plays the effect of dielectric barrier, thereby suppresses the growth of oxidized portion on the substrate thickness direction.Therefore, the thick profile for the curved profile that obtains to have accurate design not only needs repetition anodization upper surface to form oxidized portion, remove these steps of oxidized portion then with the part, also need use the different anodes of arranging in each step.In this respect, have been found that above-mentioned prior art can not be used to make the optical lens with adequate thickness.
The open No.2000-263556 of Japan Patent discloses another prior art, and it relates to a kind of technology that is used to make the micro optical lens mould.This mould is by the following steps manufacturing: the preparation Semiconductor substrate; On the upper surface of this Semiconductor substrate, dielectric mask is set; On this mask, form one or more openings; Semiconductor substrate is placed in the electrolyte; And the anodization upper surface portion of masked covering not, this part is converted to porous zone (porous zone).After this, remove this porous zone, on the upper surface of substrate, to stay circular protrusions.Ultraviolet curable resin is placed in this projection, and in this projection, solidifies this ultraviolet curable resin, to obtain convex lens.Though prior art discloses the formation in porous zone, this technology depends on the mask with opening, thereby this porous zone is anisotropically produced from the center of each opening.Therefore, the circular protrusions of gained is restricted, and has substantially the same radius of curvature.Under this restriction, this technology is unsuitable for making the optical lens with different curvature radius or complex surface profile.
In addition, when the mask that has a minute opening when use forms lenslet, can around minute opening, successfully form porous layer in the starting stage.But the bubble that occurs in the starting stage is difficult to discharge and stay probably in the porous zone by minute opening, can stop electrolyte to enter substrate like this, thereby hinder the further generation in porous zone.As a result, the predetermined profile that the porous zone obtains expecting can not be controlled, thereby lens can not be reproduced with accurate profile.On the other hand, when the mask that has a corresponding big opening when use forms relatively big lens, very likely than a lot of soon, and be difficult to control this speed in the anodized speed in around openings place in the anodized speed in open centre place.Therefore, the lens of porous zone and gained are difficult to obtain the accurately surface profile of control.
In addition, because mask is deposited over and carries out on the anodized side of substrate, and this mask generally is to be made by SiN or similar material with relatively little thickness (for example, 1 μ m or littler), therefore owing to the growth of stress along with the porous zone produces, make mask be easily damaged.In addition, in this respect, it is satisfactory at the manufacturing lens to find to depend on the technology that is arranged in the mask on the substrate anodization side.
Summary of the invention
Consider that the problems referred to above have finished the present invention, so that a kind of technology of improved manufacturing optical lens to be provided.Technology utilization according to the present invention has the Semiconductor substrate of relatively flat upper surface and flat bottom surface, and may further comprise the steps: form anode on lower surface; Semiconductor substrate is placed in the electrolyte.Then, carry out following steps: make between the negative electrode of electric current in anode and electrolyte and flow, make degree of depth difference between the each several part, in upper surface, stay the porous layer of generation with the upper surface of changing substrate; And from substrate, remove porous layer, on upper surface, to stay curved surface.This technology is characterised in that anode is deposited over the structure to obtain reinforcing on the lower surface, and be configured to provide the predetermined distribution of electric-field intensity, described electric-field intensity is passed the upper surface of substrate and lower surface and different between the each several part of substrate, and the porous layer with varying depth that the distribution with electric-field intensity is complementary is provided thus.
By above-mentioned technology, anode and substrate are made into integration, obtaining the electric-field intensity distribution with the anode pattern strict conformance exactly, thereby the curved surface of porous layer and gained accurately is shaped.In addition, because anode is configured to provide the predetermined distribution of electric-field intensity, this electric-field intensity is different between the each several part of substrate, therefore is easy to provide the continually varying radius of curvature for the curved surface of gained.In addition, owing to carry out anodization from the upper surface of substrate, the upper surface of described substrate is exposed in the electrolyte by whole, promptly is not limited anodized material and covers or cover; Therefore and mainly control anodized speed, be easy to produce the accurate porous layer of having controlled profile or profile, thereby provide corresponding surface profile accurately for the lens of gained by the anode pattern on the substrate lower surface.
Therefore, described technology can be used to make the non-sphere lens that optical lens, especially surface profile are accurately controlled best.
Though after forming porous layer, preferably remove anode from substrate, when the certain lenses (wherein, anode can not influence lens performance) of Production Example such as recessed mirror lens and so on, anode can remain fixed on the substrate.
In a scheme of the present invention, anode is formed on partly on the lower surface of substrate, to obtain one or more circular anode pattern, described circular anode pattern has defined the predetermined distribution of electric-field intensity, and is used for having in the part place realization relative with circular anode pattern the curved surface of concave contour.Therefore, by suitably designing anode pattern, can be easy to make concavees lens with desired curvature radius.
In another program of the present invention,, and make anode have one or more circular opens with the lower surface of anodic deposition at substrate.Circular open in the anode makes electric-field intensity distribution weaken gradually to the center of opening from the periphery of opening, thereby forms the porous layer that thickness gradually changes, and by removing porous layer on upper surface the part place relative with circular open obtain cam contour.
Not in anode, to make circular open, but the dielectric circular masks is formed on partly on the lower surface that is positioned at the anode back, obtain cam contour in order to part place relative with circular masks on upper surface to form the similar distribution of electric-field intensity.Circular masks forms by following steps: dielectric layer is arranged on the whole lower surface of Semiconductor substrate; And a part of removing dielectric layer, to stay circular masks.
Preferably, described Semiconductor substrate is made by silicon, and described dielectric layer is made by silica or silicon nitride.In addition, preferably, described electrolyte comprises the hydrofluoric aqueous solution.
In addition, except planoconvex spotlight or plano-concave lens, the present invention also helps and makes concave-convex lens, biconvex lens and biconcave lens.For example, can make concave-convex lens by following technology.At first, in the upper surface of substrate, make concave contour, and add following steps: on upper surface, form supplementary anode with additional circular open, described additional circular open be configured to upper surface on the concave contour that formed coaxial; Semiconductor substrate is placed in the electrolyte; Make between the negative electrode of electric current in supplementary anode and electrolyte and to flow, make degree of depth difference between the each several part, in lower surface, stay additional oxide layer with the lower surface of oxidation substrate; And from substrate, remove additional oxide layer, on lower surface, to stay cam contour.
Similarly, can successfully make biconcave lens by following technology.At first, form concave contour in the upper surface of substrate, carry out following steps then: form additional circular anode on upper surface partly, described additional circular anode is coaxial with the concave contour that is formed in the upper surface; Semiconductor substrate is placed in the electrolyte; Make electric current mobile between the negative electrode in additional circular anode and the electrolyte, make degree of depth difference between the each several part, in lower surface, stay additional oxide layer with the lower surface of oxidation substrate; And from substrate, remove additional oxide layer, on lower surface, to stay concave contour.
Also can successfully make biconvex lens by following technology.At first, in the upper surface of substrate, form cam contour, carry out following steps then: on upper surface, form supplementary anode with additional circular open, described additional circular open be configured to upper surface on the cam contour that formed coaxial; Semiconductor substrate is placed in the electrolyte; Make between the negative electrode of electric current in supplementary anode and electrolyte and to flow, make degree of depth difference between the each several part, in lower surface, stay additional oxide layer with the lower surface of oxidation substrate; And from substrate, remove oxide layer, on lower surface, to stay another cam contour.
Selectively, can form concave-convex lens by following technology.At first, make cam contour, carry out following steps then: form additional circular anode on upper surface partly, described additional circular anode is coaxial with the cam contour that is formed on the upper surface; Semiconductor substrate is placed in the electrolyte; Make between the negative electrode of electric current in supplementary anode and electrolyte and to flow, make degree of depth difference between the each several part, in lower surface, stay additional oxide layer with the lower surface of oxidation substrate; And from substrate, remove additional oxide layer, on lower surface, to stay concave contour.
In addition, the present invention successfully is suitable for making the non-circular lens of cylindrical lens and so on.For example, when forming non-circular concave contour, anode forms provides non-circular anode pattern.Non-circular concavees lens also can form by using such anode, this anode is to form in the following manner: add conductive layer on the lower surface of substrate, and remove the part of conductive layer and form non-circular openings in conductive layer, described non-circular openings is used for part place relative with circular open on upper surface and obtains cam contour.
Selectively, make non-circular concavees lens by use via the anode that the non-circular mask of dielectric covers the substrate lower surface, the non-circular mask of described dielectric is formed on the lower surface partly.
In addition, preferably, terminal stage reduces electric current on generation porous layer ground, thinks that lens provide level and smooth surface finish (finish).
The following detailed description of carrying out in conjunction with the drawings, these and other favorable characteristics of the present invention will become more obvious.
Description of drawings
Fig. 1 is the perspective view according to the planoconvex spotlight of first embodiment of the invention manufacturing;
Fig. 2 is the vertical view of lens;
Fig. 3 is the sectional view of lens;
Fig. 4 is the sectional view that the device that uses said lens is shown;
Fig. 5 is the sectional view that is used to implement the anodization equipment of technology of the present invention;
Fig. 6 A to Fig. 6 E illustrates the sectional view that lens form step;
Fig. 7 A and Fig. 7 B are illustrated in the schematic diagram that lens form the electric-field intensity distribution that produces in the technology;
Fig. 8 illustrates the anode pattern that is formed on the substrate lower surface.
Fig. 9 is the chart that the cross-sections surfaces profile of the lens of making according to the example of the foregoing description is shown;
Figure 10 is the sectional view that is used to implement another anodization equipment of technology of the present invention;
Figure 11 is the perspective view according to the plano-concave lens of second embodiment of the invention manufacturing;
Figure 12 A to Figure 12 C illustrates the sectional view that lens form step;
Figure 13 A to Figure 13 G illustrates the sectional view that forms step according to the biconvex lens of third embodiment of the invention;
Figure 14 A to Figure 14 F illustrates the sectional view that forms step according to the biconcave lens of fourth embodiment of the invention;
Figure 15 A to Figure 15 F illustrates the sectional view that forms step according to the concave-convex lens of fifth embodiment of the invention;
Figure 16 A to Figure 16 E illustrates the sectional view that forms step according to the concave-convex lens of sixth embodiment of the invention;
Figure 17 is the perspective view that non-circle lens that can be constructed in accordance is shown;
Figure 18 illustrates according to the modification of the foregoing description to use dielectric mask to make the sectional view of the step of convex lens.
The specific embodiment
Referring to figs. 1 through Fig. 5, explain the present invention now, to make planoconvex spotlight according to the first embodiment of the present invention.As shown in Figure 1 to Figure 3, lens L is configured to have integral-type flange (integral flange) F, it is used for lens are installed in the device of optical pickocff 200 and so on for example, optical pickocff 200 is that a kind of typical case of lens uses, and be configured to have for example sensing element of thermoelectric element 210 and so on, receive light with scioptics, as shown in Figure 4.
Lens are made by the semi-conducting material of for example silicon (Si), germanium (Ge), carborundum (SiC), GaAs (GaAs), gallium phosphide (GaP) and indium phosphide (InP) etc.In the present embodiment, use the Semiconductor substrate 10 of p type silicon, make planoconvex spotlight by optionally substrate being carried out anodization.Use anodizing apparatus 100 to carry out anodization, as shown in Figure 5, anodizing apparatus 100 is configured to substrate 10 is placed in the electrolyte 140 of certain volume, and is configured to be equipped with adjuster 130, the electric current that flows through between the negative electrode 110 that is used for being adjusted in anode electrode 120 and being immersed in solution.Anode electrode 120 keeps in touch with the lower surface of substrate 10, thus in its upper surface relative with negative electrode 110 with variable degree promotion anodization.Anode electrode 120 and negative electrode 110 are all made by platinum.
In the present embodiment, select to have the substrate 10 of several ohmcms (Ω cm) to the such low-resistivity of hundreds of ohmcm (Ω cm).For example, by the step of Fig. 6 A to Fig. 6 E, making resistivity is that 80 Ω cm, thickness are that the smooth p type silicon substrate 10 of 0.5mm is configured as lens.After cleaning and cleaning, handle substrate 10, make it on whole lower surface, have conductive layer 20 (Fig. 6 B).Conductive layer 20 is made by for example aluminium, and the deposition techniques by sputter and so on is on substrate 10, to have the uniform thickness of 1 μ m.Then, etch layer 20, and stay the circular open 22 that diameter is 2mm, and this diameter is complementary with the diameter of the lens that will make, thus the structure that obtains reinforcing, and in this structure, conductive layer 20 has defined and substrate 10 incorporate anode pattern (Fig. 6 C).
Subsequently, under conductive layer 20 or anode pattern and anode electrode 120 contacted situations, substrate 10 is immersed in the electrolyte 140 in the anodizing apparatus 100, be received in the electric current that flows through between anode pattern and the negative electrode 110 subsequently, optionally the upper surface of substrate being carried out anodization, thereby produce porous layer 30 (Fig. 6 D) at the upper surface of substrate 10 corresponding to anode pattern.Use adjuster 130 to regulate electric current so that electric current has for example 30mA/cm
2Scheduled current intensity, and continue for example 120 minutes the scheduled time.After this, porous layer 30 and conductive layer 20 are etched away, to obtain lens (Fig. 6 E).
Employed electrolyte is for having mixed the aqueous solution of hydrogen fluoride (HF) and ethanol with proper proportion.In anodic process, following chemical reaction takes place:
Si+2HF+(2-n)h
+→SiF
2+2H
++n·e
-
SiF
2+2HF→SiF
4+2H
++H
2
SiF
4+2HF→SiH
2F
6
Wherein, h
+Represent the hole, e
-Represent electronics.
Schematically show as Fig. 7 A, plane electric fields intensity or current density and anode pattern are consistently carried out and can be distributed with changing.In the figure, the line that has black arrow represents that positive current flows through the path of substrate 10, and the line that has a white arrow represents that electronics flows through the path of substrate 10.Owing to the change around opening 22 of current density in the plane, center of opening is big, therefore the porous layer 30 that is produced has the degree of depth that continuously changes, than this degree of depth of center becoming greatly on every side towards opening 22 of opening.Therefore, by removing porous layer 30 and anode pattern or conductive layer 20, can obtain planoconvex spotlight.The distribution of plane electric fields intensity will mainly be determined by anode pattern, and will be secondly definite by the planar structure (being the arrangement of negative electrode in the plane parallel with substrate) of the distance between the resistivity of the resistance coefficient of substrate 10 and thickness, electrolyte 140, substrate 10 and the negative electrode 110, negative electrode 110.Therefore, by come suitably to select above-mentioned parameter mutually in conjunction with anode pattern, obtain any desired lens contour most probably.Here it should be noted, because anodization is carried out under the situation that the oxidized portion that occurs under other situation hinders in not by substrate, thereby produce porous layer continuously, therefore can make thick lens at an easy rate in independent anodic process, this has improved the flexibility of lens designs.
By the concentration of hydrogen fluoride (HF) aqueous solution and/or the mixing ratio of HF and ethanol, can regulate the resistance of electrolyte.Shown in Fig. 7 A, negative electrode 110 can be designed as the pattern that has with the anode pattern strict conformance, perhaps shown in Fig. 7 B, negative electrode 110 can be designed as has such pattern: in the plane parallel with substrate 10, relative cathode element 112 is a little towards the off-centring of the opening 22 of anode pattern.Can be with respect to current density with apart from the distance adjustment side-play amount of substrate 10.
In anodic process, adjuster 130 is used for current density is remained on constant level.But preferably the final stage at anodic process reduces current density gradually, correspondingly to reduce the speed that produces porous layer 30.By this technology, the lens of gained can have more level and smooth surface finish.Regulate current density by monitor current level or voltage levvl.
By using for example KOH, NaOH, TMAH alkaline solution or HF solution such as (TMAHs), can remove porous layer 30 and conductive layer 20.
Example
Formation thickness is that 0.5mm, resistivity are that 80 Ω cm, diameter are the p type silicon substrate 10 of 100mm, and by forming the thick aluminium conductive layer 20 of 1 μ m on the lower surface that sputters at p type silicon substrate 10.With conductive layer 20 with 420 ℃ temperature sintering 20 minutes after, by photoetching, cover conductive layer 20 with the resist pattern, this resist pattern has the window that a plurality of diameters are 2mm.Subsequently, conductive layer 20 not cover part etched be the opening of 2mm to form a plurality of diameters in conductive layer 20, as shown in Figure 8.After removing the resist pattern, substrate 10 is placed in the anodizing apparatus that comprises electrolyte shown in Figure 5, this electrolyte comprises 50% the HF aqueous solution and 1: 1 ratio mixture of ethanol.Then, with 30mA/cm
2Current density with substrate anodization 3 hours.Found that the porous layer 30 that is produced has the thickness of 0.3mm with conductive layer 20 corresponding part places, and in the plane parallel, had the thickness that reduces gradually towards the center of opening 22 with substrate.Then, by with 10% the KOH aqueous solution with porous layer 30 and conductive layer 20 etchings 15 minutes and they are etched away, thereby form a plurality of planoconvex spotlights.Then, substrate 10 is cut into a plurality of lens.The etch-rate of removing porous layer 30 is more than 10 times of etch-rate of removing substrate 10.Therefore, only optionally etch away porous layer 30, and substrate 10 is kept intactly.Each lens configuration that forms thus is the lens thickness with 0.195mm, and its profile as shown in Figure 9.
Figure 10 illustrates another anodizing apparatus 100A that is used to make lens equally.The device with Fig. 5 is identical basically for device 100A, and except substrate 10 is set at the center of electrolyte 140, and negative electrode 110A and anode electrode 120A are separately positioned on by the opposite side of the substrate 10 of vertical support.
Second embodiment
Figure 11 and Figure 12 illustrate the technology according to the manufacturing plano-concave lens L of second embodiment of the invention.In the present invention, form Semiconductor substrate 10, and on the lower surface of Semiconductor substrate 10, have anode pattern, this anode pattern by a plurality of circular anodes 20 to form to similar pattern shown in Figure 8.For easy, an anode 20 only has been shown in Figure 12 A and Figure 12 B.Each anode 20 be used for to the similar mode of being discussed with reference to first embodiment, by anodization and remove the porous layer 30 of gained and in the relative upper surface of substrate 10, form concave contour.That is, during anodic process, part place relative with each anode 20 in upper surface produces porous layer 30, and around each electrode 20, the degree of depth of porous layer 30 becomes big towards the center of each electrode 20, shown in Figure 12 B.Then, etch away porous layer 30 and anode 20, expose concave contour with upper surface, shown in Figure 12 C at substrate 10.Subsequently, substrate 10 is cut into single plano-concave lens.
The 3rd embodiment
Figure 13 illustrates the technology of making biconvex lens L according to third embodiment of the invention, and it is similar to first embodiment, except comprising additional anodic process among the 3rd embodiment.At first, shown in Figure 13 A to 13D,, form substrate 10, and on the upper surface of substrate 10, have cam contour by step as described in the first embodiment.Then, shown in Figure 13 E, the additional conductive layer 24 that will have a plurality of additional circular opens 26 is deposited on the upper surface, and each additional circular open 26 is to be provided with the concentric mode of established cam contour, wherein, only show an additional circular open 26 for easy.Subsequently, with substrate 10 anodization, in the lower surface of substrate 10, to form additional porous layer 34, shown in Figure 13 F.Additional porous layer 34 is etched with additional conductive layer 24, to obtain biconvex lens L, shown in Figure 13 G.In this way, by adding another anodic process, can obtain biconvex lens simply.
The 4th embodiment
Figure 14 illustrates the technology of making biconcave lens L according to fourth embodiment of the invention, and it is similar to second embodiment, except having added another anodic process among the 4th embodiment.Shown in Figure 14 A to Figure 14 C,, form substrate 10, and on the upper surface of substrate 10, have a plurality of concave contours (, only illustrating) for easy by the technology described in second embodiment.Then, shown in Figure 14 D, form technology by existing film, CVD (chemical vapour deposition (CVD)) for example, with have suitable thickness for example the dielectric mask 40 of 200nm cover the entire upper surface of substrates 10.Mask 40 is by being selected from SiO
2, the material in the group that SiN and SiC formed makes.After this, at the center of each concave contour etching mask 40 to stay opening at this.Then, additional aluminium conductive layer 24 is deposited on the whole mask 40,, is used for directly contacting, shown in Figure 14 E with the center of each concave contour so that center anode 25 is arranged in the opening of mask.Subsequently, with substrate 10 anodization, in lower surface, to form the additional porous layer 34 concentric with center anode 25.At last, shown in Figure 14 F, will add porous layer 34 and conductive layer 24 and mask 40 and etch away together,, be cut into single biconcave lens subsequently to obtain biconcave lens L.
The 5th embodiment
Figure 15 illustrates the technology of making concave-convex lens L according to fifth embodiment of the invention, and it is similar to first and second embodiment, except having implemented twice anodic process among the 5th embodiment to form porous layer in upper surface and lower surface.Shown in Figure 15 A to Figure 15 C, in the mode quite similar, form substrate 10, and in the upper surface of substrate 10, have a plurality of concave contours (, only illustrating) for easy with second embodiment.Then, additional conductive layer 24 is deposited on the upper surface of substrate 10, this conductive layer of etching afterwards is to stay a plurality of additional circular opens 26, and each circular open 26 is concentric with the concave contour that has formed, shown in Figure 15 D.The size of each opening 26 is set to the diameter that its diameter is a bit larger tham the corresponding female profile.Then, shown in Figure 15 E, with substrate 10 anodization, to produce additional porous layer at lower surface, each additional porous layer is corresponding with each concave contour.Afterwards, extra play 34 and additional conductive layer 24 are etched away together, to obtain having shown in Figure 15 F the final structure of concavo-convex profile.
The 6th embodiment
Figure 16 illustrates the optional technology of making concave-convex lens according to sixth embodiment of the invention, and it is similar to the 5th embodiment, except the order difference of anodic process.Shown in Figure 16 A to Figure 16 C, in the mode quite similar, form substrate 10, and in the upper surface of substrate 10, have a plurality of cam contours (, only illustrating) for easy with first embodiment.Then, shown in Figure 16 C, additional conductive layer 24 is deposited on the top of each cam contour.The size of each additional conductive layer 24 is set to the diameter of its diameter less than each respective cams exterior feature, and is used for producing the additional porous layer 34 concentric with cam contour in anodization, shown in Figure 16 D.The additional porous layer 34 and the additional conductive layer 24 of each gained are etched away together, to obtain shown in Figure 16 E, having the final structure of concavo-convex profile.
Figure 17 illustrates the cylindrical lens L that can make equally according to the present invention.When making this non-circular lens, in the plane parallel, make the opening in the conductive layer or be configured as rectangle by the mask that conductive layer covers with substrate surface.
Though in the above-described embodiments, the conductive layer that cam contour is interpreted as having by use circular open forms, and the present invention should be interpreted as being not restricted to this, and should comprise the scheme of using dielectric mask 50 as shown in figure 18 in conjunction with conductive layer 20.Dielectric mask 50 by local deposits on the lower surface of substrate 10 with the expectation the corresponding part of cam contour, and conductive layer 20 is deposited on the mask 50 to cover whole substrate surface, thereby realize different electric-field intensity distribution, in anodic process, to form the porous layer have with the structure of cam contour complementation.Dielectric mask is selected from by SiO
2, group that SiN and SiC formed, and by prior art for example CVD or the like be deposited on the substrate.
In addition, the present invention should be interpreted as being not limited to use silicon substrate, and can use other semi-conducting material in conjunction with specific electrolyte, and is as shown in the table.
| Semi-conducting material | Electrolyte | Mask material |
| Si | HF:C 2H 5OH | SiN |
| Ge | HF:C 2H 5OH | SiO 2、SiN、SiC |
| SiC | HF:C 2H 5OH | SiN |
| GaAs | HCl | SiO 2、SiN、SiC |
| Gap | H 2SO 4 | SiO 2、SiN、SiC |
| Inp | HCl | SiO 2、SiN、SiC |
In last table, listed in conjunction with semi-conducting material and electrolyte and available mask material.
Claims (according to the modification of the 19th of treaty)
1. technology of making optical lens, described technology may further comprise the steps:
The preparation Semiconductor substrate, described Semiconductor substrate has flat upper surfaces respect to one another and flat bottom surface;
On described lower surface, form anode;
Described Semiconductor substrate is placed in the electrolyte;
Make between the negative electrode of electric current in described anode and described electrolyte and flow, make degree of depth difference between the each several part, in described upper surface, stay porous layer with the upper surface of changing described Semiconductor substrate; And
From described Semiconductor substrate, remove described porous layer, on described upper surface, to stay curved surface;
It is characterized in that:
Described anode is deposited over the structure to obtain reinforcing on the described lower surface, and be configured to provide the predetermined distribution of electric-field intensity, described electric-field intensity is passed the upper surface of described Semiconductor substrate and lower surface and different between the each several part of described Semiconductor substrate, and the porous layer with varying depth that the distribution with described electric-field intensity is complementary is provided thus.
2. technology as claimed in claim 1 wherein after forming described porous layer, is removed described anode from described Semiconductor substrate.
3. technology as claimed in claim 2 wherein forms described porous layer on the entire upper surface of described Semiconductor substrate.
4. technology as claimed in claim 1, wherein described anode is formed on the described lower surface partly, to obtain circular anode pattern, described circular anode pattern has defined the described predetermined distribution of described electric-field intensity, obtains concave contour with part place relative with described anode on described upper surface.
5. technology as claimed in claim 1, wherein said anode forms by following steps:
Depositing conducting layer on the lower surface of described Semiconductor substrate; And
Remove the part of described conductive layer, in described conductive layer, forming circular open,
Described circular open is used for part place relative with described circular open on described upper surface and obtains cam contour.
6. technology as claimed in claim 1, wherein said anode is formed on the lower surface of described Semiconductor substrate via the dielectric circular masks, described dielectric mask is formed on the described lower surface partly, to realize the described predetermined distribution of described electric-field intensity, part place relative with described circular masks on described upper surface obtains cam contour.
7. technology as claimed in claim 6, wherein said circular masks forms by following steps:
On the whole lower surface of described Semiconductor substrate, dielectric layer is set; And
Remove the part of described dielectric layer, to stay described circular masks.
8. technology as claimed in claim 6, wherein said Semiconductor substrate is made by silicon, and described dielectric layer is made by silica or silicon nitride.
9. technology as claimed in claim 4, further comprising the steps of:
On described upper surface, form supplementary anode with additional circular open, described additional circular open be configured to described upper surface on the described concave contour that formed coaxial;
Described Semiconductor substrate is placed in the described electrolyte;
Make between the described negative electrode of electric current in described supplementary anode and described electrolyte and to flow, make degree of depth difference between the each several part, in described lower surface, stay additional oxide layer with the lower surface of the described Semiconductor substrate of oxidation; And
Remove described additional oxide layer from described Semiconductor substrate, on described lower surface, to stay cam contour.
10. technology as claimed in claim 4, further comprising the steps of:
Form additional circular anode on described upper surface partly, the described concave contour that has formed on described additional circular anode and the described upper surface is coaxial;
Described Semiconductor substrate is placed in the described electrolyte;
Make between the described negative electrode of electric current in described additional circular anode and described electrolyte and to flow, make degree of depth difference between the each several part, in described lower surface, stay additional oxide layer with the lower surface of the described Semiconductor substrate of oxidation; And
Remove described additional oxide layer from described Semiconductor substrate, on described lower surface, to stay concave contour.
11., further comprising the steps of as claim 5 or 6 described technologies:
On described upper surface, form supplementary anode with additional circular open, described additional circular open be configured to described upper surface on the described cam contour that formed coaxial;
Described Semiconductor substrate is placed in the described electrolyte;
Make between the described negative electrode of electric current in described supplementary anode and described electrolyte and to flow, make degree of depth difference between the each several part, in described lower surface, stay additional oxide layer with the lower surface of the described Semiconductor substrate of oxidation; And
Remove described additional oxide layer from described Semiconductor substrate, on described lower surface, to stay another cam contour.
12., further comprising the steps of as claim 5 or 6 described technologies:
Form additional circular anode on described upper surface partly, the described cam contour that has formed on described additional circular anode and the described upper surface is coaxial;
Described Semiconductor substrate is placed in the described electrolyte;
Make between the described negative electrode of electric current in described additional circular anode and described electrolyte and to flow, make degree of depth difference between the each several part, in described lower surface, stay additional oxide layer with the lower surface of the described Semiconductor substrate of oxidation; And
Remove described additional oxide layer from described Semiconductor substrate, on described lower surface, to stay concave contour.
13. technology as claimed in claim 1, wherein said Semiconductor substrate is made by silicon, and described electrolyte comprises the hydrofluoric aqueous solution.
14. technology as claimed in claim 1, wherein said Semiconductor substrate is made by p type semiconductor.
15. technology as claimed in claim 1, wherein described anode is formed on the described lower surface partly, to obtain non-circular anode pattern, described non-circular anode pattern has defined the described predetermined distribution of described electric-field intensity, and part place relative with described anode on described upper surface obtains concave contour.
16. technology as claimed in claim 1, wherein said anode forms by following steps:
On the lower surface of described Semiconductor substrate, add conductive layer; And
Remove the part of described conductive layer, in described conductive layer, forming non-circular openings,
Described circular open is used for part place relative with described circular open on described upper surface and obtains cam contour.
17. technology as claimed in claim 1, wherein said anode is formed on the lower surface of described Semiconductor substrate via the non-circular mask of dielectric, the non-circular mask of described dielectric is formed on the described lower surface partly, to realize the described predetermined distribution of described electric-field intensity, part place relative with described circular masks on described upper surface obtains cam contour.
18. technology as claimed in claim 1 is wherein regulated described electric current, and it is reduced in the final stage that produces described porous layer.
19. technology as claimed in claim 1 is wherein selected described Semiconductor substrate, makes it have the resistivity of several ohmcms (Ω cm) to hundreds of ohmcm (Ω cm).
Claims (19)
1. technology of making optical lens, described technology may further comprise the steps:
The preparation Semiconductor substrate, described Semiconductor substrate has flat upper surfaces respect to one another and flat bottom surface;
On described lower surface, form anode;
Described Semiconductor substrate is placed in the electrolyte;
Make between the negative electrode of electric current in described anode and described electrolyte and flow, make degree of depth difference between the each several part, in described upper surface, stay porous layer with the upper surface of changing described Semiconductor substrate; And
From described Semiconductor substrate, remove described porous layer, on described upper surface, to stay curved surface;
It is characterized in that:
Described anode is deposited and the structure to obtain reinforcing on described lower surface, and be configured to provide the predetermined distribution of electric-field intensity, described electric-field intensity is passed the upper surface and the lower surface and different between the each several part of described Semiconductor substrate of described Semiconductor substrate, porous layer with varying depth that the distribution with described electric-field intensity is complementary is provided thus, after forming described porous layer from the described anode of described Semiconductor substrate removal.
2. technology as claimed in claim 1 wherein after forming described porous layer, is removed described anode from described Semiconductor substrate.
3. technology as claimed in claim 2 wherein forms described porous layer on the entire upper surface of described Semiconductor substrate.
4. technology as claimed in claim 1, wherein described anode is formed on the described lower surface partly, to obtain circular anode pattern, described circular anode pattern has defined the described predetermined distribution of described electric-field intensity, obtains concave contour with part place relative with described anode on described upper surface.
5. technology as claimed in claim 1, wherein said anode forms by following steps:
Depositing conducting layer on the lower surface of described Semiconductor substrate; And
Remove the part of described conductive layer, in described conductive layer, forming circular open,
Described circular open is used for part place relative with described circular open on described upper surface and obtains cam contour.
6. technology as claimed in claim 1, wherein said anode is formed on the lower surface of described Semiconductor substrate via the dielectric circular masks, described dielectric mask is formed on the described lower surface partly, to realize the described predetermined distribution of described electric-field intensity, part place relative with described circular masks on described upper surface obtains cam contour.
7. technology as claimed in claim 6, wherein said circular masks forms by following steps:
On the whole lower surface of described Semiconductor substrate, dielectric layer is set; And
Remove the part of described dielectric layer, to stay described circular masks.
8. technology as claimed in claim 6, wherein said Semiconductor substrate is made by silicon, and described dielectric layer is made by silica or silicon nitride.
9. technology as claimed in claim 4, further comprising the steps of:
On described upper surface, form supplementary anode with additional circular open, described additional circular open be configured to described upper surface on the described concave contour that formed coaxial;
Described Semiconductor substrate is placed in the described electrolyte;
Make between the described negative electrode of electric current in described supplementary anode and described electrolyte and to flow, make degree of depth difference between the each several part, in described lower surface, stay additional oxide layer with the lower surface of the described Semiconductor substrate of oxidation; And
Remove described additional oxide layer from described Semiconductor substrate, on described lower surface, to stay cam contour.
10. technology as claimed in claim 4, further comprising the steps of:
Form additional circular anode on described upper surface partly, the described concave contour that has formed on described additional circular anode and the described upper surface is coaxial;
Described Semiconductor substrate is placed in the described electrolyte;
Make between the described negative electrode of electric current in described additional circular anode and described electrolyte and to flow, make degree of depth difference between the each several part, in described lower surface, stay additional oxide layer with the lower surface of the described Semiconductor substrate of oxidation; And
Remove described additional oxide layer from described Semiconductor substrate, on described lower surface, to stay concave contour.
11., further comprising the steps of as claim 5 or 6 described technologies:
On described upper surface, form supplementary anode with additional circular open, described additional circular open be configured to described upper surface on the described cam contour that formed coaxial;
Described Semiconductor substrate is placed in the described electrolyte;
Make between the described negative electrode of electric current in described supplementary anode and described electrolyte and to flow, make degree of depth difference between the each several part, in described lower surface, stay additional oxide layer with the lower surface of the described Semiconductor substrate of oxidation; And
Remove described additional oxide layer from described Semiconductor substrate, on described lower surface, to stay another cam contour.
12., further comprising the steps of as claim 5 or 6 described technologies:
Form additional circular anode on described upper surface partly, the described cam contour that has formed on described additional circular anode and the described upper surface is coaxial;
Described Semiconductor substrate is placed in the described electrolyte;
Make between the described negative electrode of electric current in described additional circular anode and described electrolyte and to flow, make degree of depth difference between the each several part, in described lower surface, stay additional oxide layer with the lower surface of the described Semiconductor substrate of oxidation; And
Remove described additional oxide layer from described Semiconductor substrate, on described lower surface, to stay concave contour.
13. technology as claimed in claim 1, wherein said Semiconductor substrate is made by silicon, and described electrolyte comprises the hydrofluoric aqueous solution.
14. technology as claimed in claim 1, wherein said Semiconductor substrate is made by p type semiconductor.
15. technology as claimed in claim 1, wherein described anode is formed on the described lower surface partly, to obtain non-circular anode pattern, described non-circular anode pattern has defined the described predetermined distribution of described electric-field intensity, and part place relative with described anode on described upper surface obtains concave contour.
16. technology as claimed in claim 1, wherein said anode forms by following steps:
On the lower surface of described Semiconductor substrate, add conductive layer; And
Remove the part of described conductive layer, in described conductive layer, forming non-circular openings,
Described circular open is used for part place relative with described circular open on described upper surface and obtains cam contour.
17. technology as claimed in claim 1, wherein said anode is formed on the lower surface of described Semiconductor substrate via the non-circular mask of dielectric, the non-circular mask of described dielectric is formed on the described lower surface partly, to realize the described predetermined distribution of described electric-field intensity, part place relative with described circular masks on described upper surface obtains cam contour.
18. technology as claimed in claim 1 is wherein regulated described electric current, and it is reduced in the final stage that produces described porous layer.
19. technology as claimed in claim 1 is wherein selected described Semiconductor substrate, makes it have the resistivity of several ohmcms (Ω cm) to hundreds of ohmcm (Ω cm).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005145952 | 2005-05-18 | ||
| JP145952/2005 | 2005-05-18 | ||
| JP371072/2005 | 2005-12-22 | ||
| JP371071/2005 | 2005-12-22 |
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| Publication Number | Publication Date |
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| CN101175628A true CN101175628A (en) | 2008-05-07 |
| CN100581796C CN100581796C (en) | 2010-01-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200680017004A Expired - Fee Related CN100581796C (en) | 2005-05-18 | 2006-05-16 | Technique for producing optics lens |
| CNB2006800169850A Expired - Fee Related CN100546001C (en) | 2005-05-18 | 2006-05-16 | On Semiconductor substrate, form the technology of curved profile |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006800169850A Expired - Fee Related CN100546001C (en) | 2005-05-18 | 2006-05-16 | On Semiconductor substrate, form the technology of curved profile |
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| CN (2) | CN100581796C (en) |
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| CN109023501A (en) * | 2018-08-16 | 2018-12-18 | 湖南文理学院 | A kind of preparation method of nano-structure porous silicon list concavees lens |
| CN109056049A (en) * | 2018-08-16 | 2018-12-21 | 湖南文理学院 | A kind of preparation method of nano-structure porous silicon biconcave lens |
| CN109056050A (en) * | 2018-08-16 | 2018-12-21 | 湖南文理学院 | A kind of preparation method of nano-structure porous silicon biconvex lens |
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2006
- 2006-05-16 CN CN200680017004A patent/CN100581796C/en not_active Expired - Fee Related
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| CN109052313A (en) * | 2018-08-16 | 2018-12-21 | 湖南文理学院 | A kind of preparation method of silicon substrate convex reflecting mirror |
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| CN109023501A (en) * | 2018-08-16 | 2018-12-18 | 湖南文理学院 | A kind of preparation method of nano-structure porous silicon list concavees lens |
| CN109082703B (en) * | 2018-08-16 | 2020-07-31 | 湖南文理学院 | Preparation method of nano porous silicon single convex lens |
| CN109234791A (en) * | 2018-10-12 | 2019-01-18 | 湖南文理学院 | A method of preparing nano-structure porous silicon biconvex lens |
| CN109137059A (en) * | 2018-10-12 | 2019-01-04 | 湖南文理学院 | A kind of preparation method of silicon-based nano porous silicon list convex lens |
| CN109234791B (en) * | 2018-10-12 | 2020-10-27 | 湖南文理学院 | Method for preparing nano porous silicon biconvex lens |
| CN111020686A (en) * | 2019-12-12 | 2020-04-17 | 湖南文理学院 | Preparation method of nano porous silicon convex lens group |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101176186A (en) | 2008-05-07 |
| CN100581796C (en) | 2010-01-20 |
| CN100546001C (en) | 2009-09-30 |
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