CN101174752A - Cooling method for crystal end face in laser diode pump solid state laser device - Google Patents
Cooling method for crystal end face in laser diode pump solid state laser device Download PDFInfo
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- CN101174752A CN101174752A CNA2007101884419A CN200710188441A CN101174752A CN 101174752 A CN101174752 A CN 101174752A CN A2007101884419 A CNA2007101884419 A CN A2007101884419A CN 200710188441 A CN200710188441 A CN 200710188441A CN 101174752 A CN101174752 A CN 101174752A
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Abstract
The present invention relates to a radiating method for a laser-diode pump solid laser, in particular to a radiating method for the crystal end face of the laser-diode pump solid laser. The present invention at least includes a rod crystal (2) in the resonant cavity of the laser-diode pump solid laser. The present invention is characterized in that the crystal pump end face of the rod crystal (2) in the resonant cavity contacts a diamond slice (1) so as to conduct the heat of the pump end face of the rod crystal (2) to the cooling source for radiation through the diamond slice (1). Therefore, the present invention can effectively increase the radiating effect of the crystal, reduce the influence of heat effect on the performance of the laser-diode pump solid laser and improve the reliability and the service life of the laser-diode pump solid laser.
Description
Technical field
The present invention relates to cooling method for crystal end face in the heat dissipating method of laser diode pump solid state laser device, particularly laser diode pump solid state laser device.
Technical background
In the design process of laser diode pump solid state laser device, the crystal thermal effect influence is an objective reality, and influence how to control, weaken crystal thermal effect is the power delivery efficiency that has directly determined laser.
Crystal thermal effect shows as thermal lensing effect, thermal stress birefringence effect and end face deformation effect, wherein, the crystal thermal lensing effect has comparative advantage, it can produce the effect of converging to laser, the thermal stress birefringence effect influences the polarization state of laser, if thermal stress exceeds the scope that crystal can bear, may cause the damage of crystal.Though end face deformation effect proportion is little, but it should cause the damage of crystal end-face rete.For the pole crystal of end pumping, current general a kind of crystal heat sink structure is that the crystal bar side is wrapped up in the indium suitcase, uses two metal heat sink clampings then, is close to the metal heat sink outside with semiconductor cooler again heat is taken out of.Fig. 1 has provided the traditional hot sink structure, and mainly the fastening crystal of the indium skin 3 of the parcel of the periphery by crystal bar and indium skin 3 lateral surfaces is heat sink goes up assembly 4 and the heat sink assembly 5 down of crystal conducts heat to semiconductor cooler for it, is passed to low-temperature receiver by semiconductor cooler.Its heat flow path is shown in the direction of arrow among Fig. 1.We are example with the 0.1% Nd:YAG crystal that mixes, its absorption length is about 2mm, heat mainly concentrates in the 2mm of the crystal end-face place scope, if use diameter 3mm, the crystal of long 10mm, actual efficiently radiates heat area only are 1/5 of lateral area, metal heat sink and crystal all exist certain thermal resistance still more, therefore, along with the increase of pump power, the influence of the efficiently radiates heat of crystal is more obvious during high power pumping.Fig. 1 the easier crystal end-face that makes of structure produce thermal deformation, the raising of restriction power output.
Summary of the invention
The purpose of this invention is to provide cooling method for crystal end face in a kind of laser diode pump solid state laser device, so that effectively raise the crystal radiating effect, weaken crystal thermal effect to the diode pumping solid laser performance impact, improve the reliability and the life-span of diode pumping solid laser.
The object of the present invention is achieved like this, design cooling method for crystal end face in a kind of laser diode pump solid state laser device, which comprises at least the rhabdolith 2 in the laser diode pump solid state laser device resonant cavity, it is characterized in that: the crystal pumping end surface of rhabdolith 2 has the diamond wafers 1 of face contact in the resonant cavity, by diamond wafers 1 rhabdolith 2 pumping end surface heats is conducted to low-temperature receiver and dispels the heat.
The periphery parcel indium skin 3 of described diamond wafers 1 and rhabdolith 2, the fastening crystal of indium skin 3 lateral surfaces is heat sink goes up assembly 4 and the heat sink assembly 5 down of crystal, by the heat sink semiconductor cooler that conducts heat to of crystal, by the heat of the rhabdolith 2 of the heat sink conduction of the further absorbing crystal of semiconductor cooler.
Described diamond wafers 1 thickness is between 1-3mm, and the diameter of diamond wafers 1 is more than or equal to rhabdolith 2 diameters.
Characteristics of the present invention are: because the hear rate of diode end-face pump solid laser mainly concentrates on crystal pumping end surface center, adopt diamond wafers directly to contact with the crystal pumping end surface, the heat that concentrates on the crystal end-face place is conducted to low-temperature receiver by diamond, with this radiating efficiency that has improved crystal, weaken influence of thermal effect.The diamond thermal conductivity is high, because diamond is that the pump light of 808nm is high saturating for centre wavelength, its transmitance is about 70% (30% loss is mainly derived from surface reflection and absorbed inside, can reduce the surface reflection loss by the method for surface plating anti-reflection film, further improves transmitance).Therefore, it can effectively raise the crystal radiating effect, has weakened the influence of crystal thermal effect to diode pumping solid laser performance, reliability and life-span.
Description of drawings
The invention will be further described below in conjunction with the embodiment accompanying drawing.
Fig. 1 is a conventional crystal radiator structure schematic diagram;
Fig. 2 is an embodiment of the invention structural representation;
Fig. 3 is the direct heat abstractor thermally conductive pathways of a crystal end-face schematic diagram.
Among the figure: 1, diamond wafers; 2, rhabdolith; 3, indium skin; 4, the heat sink assembly of going up of crystal; 5, the heat sink assembly down of crystal.
Embodiment
As shown in Figure 2, rhabdolith 2 pumping end surface in the laser diode pump solid state laser device resonant cavity (rhabdolith 2 backs are to the position among the figure) are close to diamond wafers 1, because concerning the 0.1% Nd:YAG crystal that mixes, its absorption length is about about 2mm, heat mainly concentrates in the 2mm scope that crystal end-face begins, therefore diamond wafers 1 can directly be sent to rhabdolith 2 pumping end surface heats the low-temperature receiver absorption rapidly, and the pumping end surface of rhabdolith 2 is lowered the temperature rapidly.
Described diamond wafers 1 thickness can be between 1-3mm, and the diameter of diamond wafers 1 is more than or equal to rhabdolith 2 diameters.
Use the benefit of diamond wafers 1 to be that also it is the heat conduction light transmissive material, as easy as rolling off a log cooperation on the technology, making not to influence the luminous energy of laser diode pumping source on the one hand; Secondly little to original processing technology influence.
Same in order not change the good processing technology of original performance, also be in order better to make the pumping end surface cooling, periphery parcel indium skin 3 at diamond wafers 1 and rhabdolith 2, the fastening crystal of indium skin 3 lateral surfaces is heat sink goes up assembly 4 and the heat sink assembly 5 down of crystal, again by heat sink low-temperature receiver such as the semiconductor cooler of conducting heat to of crystal, by rhabdolith 2 heats of the heat sink conduction of the further absorbing crystal of semiconductor cooler.
This radiating effect that two kinds of structures are carried out combination can prove absolutely its advantage by the heat balance diagram of Fig. 3 direction of arrow.As shown in Figure 3, diamond wafers 1 is conducted the heat of the pumping end surface generation of rhabdolith 2 and radiation around diamond wafers 1 with 5 times of thermal conductivitys greater than copper.Most of heat has been taken away in radiation.Be transmitted to the heat sink last assembly 4 of crystal and heat sink time assembly 5 of crystal and taken away a part of heat.The not enough power that influence laser diode pump solid state laser device of thermal effect that allows the pumping end surface after-heat of rhabdolith 2 produce is exported.The thermally conductive pathways of this radiating mode has not only increased more direct, an effective path on the heat sink basis of tradition, promptly heat by generation place of pumping end surface directly by diamond wafers 1 radiation; Simultaneously also with the heat of side by the heat sink external world that conducts to.Under the situation that does not influence original processing technology, reach the reliability of raising diode pumping solid laser and the purpose in life-span, improve the diode pumping solid laser power output simultaneously.
Claims (3)
1. cooling method for crystal end face in the laser diode pump solid state laser device, which comprises at least the rhabdolith (2) in the laser diode pump solid state laser device resonant cavity, it is characterized in that: the crystal pumping end surface of rhabdolith in the resonant cavity (2) has the diamond wafers (1) of face contact, by diamond wafers (1) rhabdolith (2) pumping end surface heat is conducted to low-temperature receiver and dispels the heat.
2. root is held cooling method for crystal end face in the described laser diode pump solid state laser device of claim 1, it is characterized in that: the periphery parcel indium skin (3) of described diamond wafers (1) and rhabdolith (2), the fastening crystal of indium skin (3) lateral surface is heat sink goes up assembly (4) and the heat sink assembly (5) down of crystal, by the heat sink semiconductor cooler that conducts heat to of crystal, by rhabdolith (2) heat of the heat sink conduction of the further absorbing crystal of semiconductor cooler.
3. root is held cooling method for crystal end face in the described laser diode pump solid state laser device of claim 1, it is characterized in that: described diamond wafers (1) thickness is between 1-3mm, and the diameter of diamond wafers (1) is more than or equal to the diameter of rhabdolith (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101884419A CN101174752A (en) | 2007-11-30 | 2007-11-30 | Cooling method for crystal end face in laser diode pump solid state laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101884419A CN101174752A (en) | 2007-11-30 | 2007-11-30 | Cooling method for crystal end face in laser diode pump solid state laser device |
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| Publication Number | Publication Date |
|---|---|
| CN101174752A true CN101174752A (en) | 2008-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101884419A Pending CN101174752A (en) | 2007-11-30 | 2007-11-30 | Cooling method for crystal end face in laser diode pump solid state laser device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635428B (en) * | 2008-07-25 | 2013-03-20 | 中国科学院福建物质结构研究所 | Solid laser adopting laser heating lens to compensate the thermal effect of laser medium in real time |
| CN108616028A (en) * | 2016-12-10 | 2018-10-02 | 中国科学院大连化学物理研究所 | A kind of cooling device and cooling means of high heat flux density |
-
2007
- 2007-11-30 CN CNA2007101884419A patent/CN101174752A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635428B (en) * | 2008-07-25 | 2013-03-20 | 中国科学院福建物质结构研究所 | Solid laser adopting laser heating lens to compensate the thermal effect of laser medium in real time |
| CN108616028A (en) * | 2016-12-10 | 2018-10-02 | 中国科学院大连化学物理研究所 | A kind of cooling device and cooling means of high heat flux density |
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